CN112086083B - Phonon crystal unit cell structure, phonon crystal device and preparation method thereof - Google Patents
Phonon crystal unit cell structure, phonon crystal device and preparation method thereof Download PDFInfo
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- 239000013078 crystal Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 116
- 239000004038 photonic crystal Substances 0.000 claims abstract description 46
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 42
- 229910052710 silicon Inorganic materials 0.000 claims description 42
- 239000010703 silicon Substances 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 16
- 238000012360 testing method Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000013461 design Methods 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 32
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 235000012239 silicon dioxide Nutrition 0.000 description 16
- 239000000377 silicon dioxide Substances 0.000 description 16
- 210000002858 crystal cell Anatomy 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 238000000708 deep reactive-ion etching Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- CLOMYZFHNHFSIQ-UHFFFAOYSA-N clonixin Chemical compound CC1=C(Cl)C=CC=C1NC1=NC=CC=C1C(O)=O CLOMYZFHNHFSIQ-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 210000005069 ears Anatomy 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000010534 mechanism of action Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/16—Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/172—Methods or devices for protecting against, or for damping, noise or other acoustic waves in general using resonance effects
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- G—PHYSICS
- G10—MUSICAL INSTRUMENTS; ACOUSTICS
- G10K—SOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
- G10K11/00—Methods or devices for transmitting, conducting or directing sound in general; Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/16—Methods or devices for protecting against, or for damping, noise or other acoustic waves in general
- G10K11/162—Selection of materials
- G10K11/168—Plural layers of different materials, e.g. sandwiches
Abstract
The invention provides a phonon crystal unit cell structure, a phonon crystal device and a preparation method thereof, wherein the phonon crystal unit cell structure comprises: the substrate comprises a substrate first surface and a substrate second surface which is oppositely arranged, the substrate comprises a groove which extends from the substrate first surface to the substrate second surface and penetrates through the substrate so as to form a spring part in the substrate, the spring part extends from the inner side of the substrate to the outer side of the substrate, and the free end of the spring part is positioned at the inner side of the substrate; and the resonance body is positioned on the first surface of the substrate and is contacted with the free end of the spring component. The invention designs a photonic crystal unit cell structure based on a spring oscillator, which can be simplified into a spring-weight system, and the resonance capability of a resonance body of the photonic crystal unit cell structure can be enhanced by utilizing the vibration of a spring component, and the forbidden band frequency and the width of the photonic crystal unit cell structure can be effectively regulated and changed, so that the application range of a photonic crystal device can be enlarged.
Description
Technical Field
The invention relates to the fields of micro-electromechanical systems, micro-acoustics and micro-machining, in particular to a phonon crystal unit cell structure, a phonon crystal device and a preparation method thereof.
Background
At present, phonon crystals have been applied to many fields such as vibration isolation, noise reduction and control transmission of acoustic waves for structures to improve the performance and life of various devices. Generally, phononic crystals can be divided into two types because of the difference in mechanism of action: bragg scattered phonon crystal and local resonance phonon crystal.
The Bragg scattering phonon crystal forms an acoustic forbidden band of the phonon crystal through scattering and diffraction superposition of a structure, so that an acoustic device with a low-frequency acoustic forbidden band can be designed by using the Bragg scattering phonon crystal, but the type of phonon crystal has large geometric size and strict periodicity of the structure, and the application range of the acoustic device based on the structure is narrow. The local resonance phonon crystal forms an acoustic forbidden band by the resonance generated by the interaction of the single structure and acoustic waves, so that the local resonance phonon crystal has basic units (resonators) which can be distributed in a non-strict period or even in a random period, has higher design freedom, becomes the main direction of the current phonon crystal research, and has the acoustic forbidden band frequency of the local resonance cell structure with the same geometric dimension which is two orders of magnitude higher than that of the Bragg scattering cell structure.
The low-frequency elastic wave has very wide application in scientific research and life, wherein the infrasonic wave below 20Hz has extremely strong penetrating power and small transmission loss, and can be widely applied to disaster early warning and human disease inspection, but the infrasonic wave is close to the intrinsic frequency of the human body, so that irreversible damage can be caused to the human body through resonance; the audible sound of 20Hz-20KHz is taken as an acoustic wave band which can be recognized by human ears, and has the most wide application in daily life; the ultrasonic wave of 20KHz-1GHz has the advantages of collimation, obvious thermal effect, extremely strong penetrating capability and the like, has wide application range, and is effectively applied in the medical fields such as medical imaging diagnosis, stone crushing, ultrasonic sterilization and the like, the computer fields such as wireless communication processing, thermoelectric devices and the like, and the industrial fields such as ultrasonic thermal welding and the like.
Currently, the controllable frequency of phononic crystals for acoustic/elastic waves covers all frequency bands from subsonic waves below 20Hz to ultrasonic waves above 1 GHz. According to the theory of localized resonant photonic crystal forbidden band formation, enhancing the resonance capability of a resonator is the only way to reduce its acoustic forbidden band. In the prior researches, the resonance capability of a resonance body is generally enhanced by adopting a mode of increasing the geometric parameters of a phonon crystal unit cell structure, but the enhancement range of the resonance capability by the method is limited, and the phonon crystal device cannot be integrated with a micro-electromechanical system due to the overlarge geometric parameters. If the current research on phonon crystal is concentrated on a low-frequency (below 1 MHz) structure with a lattice constant of more than 1mm, the phonon crystal device with the lattice constant of the magnitude has larger size difference with the micro-electromechanical system device, the phonon crystal device cannot be integrated with the micro-electromechanical system, the control capability of the micro-electromechanical system on low-frequency sound waves is reduced, the forbidden band frequency of the current micro-magnitude local resonance phonon crystal device is higher, the phonon crystal device cannot be detected down to infrasonic waves and audible frequency bands, and the application range of the phonon crystal device is reduced.
Therefore, the novel photonic crystal unit cell structure, the photonic crystal device and the preparation method thereof are provided to enhance the resonance capability of a photonic crystal unit cell structure resonance body, reduce the frequency of the acoustic forbidden band of the local resonance photonic crystal device, and enlarge the application range of the photonic crystal device.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a photonic crystal unit cell structure, a photonic crystal device and a preparation method thereof, which are used for solving the problems of low resonance capability of a photonic crystal unit cell structure resonator, high frequency of an acoustic forbidden band of a local resonance photonic crystal device, and limitation of application range of the photonic crystal device in the prior art.
To achieve the above and other related objects, the present invention provides a photonic crystal unit cell structure including:
the device comprises a substrate and a free end, wherein the substrate comprises a substrate first surface and a substrate second surface which is oppositely arranged, the substrate comprises a groove which extends from the substrate first surface to the substrate second surface and penetrates through the substrate so as to form a spring component of the phonon crystal unit cell structure in the substrate, the spring component extends from the inner side of the substrate to the outer side of the substrate, and the free end of the spring component is positioned at the inner side of the substrate;
and the resonance body is positioned on the first surface of the substrate and is contacted with the free end of the spring component.
Optionally, the spring member comprises a centrosymmetric spring member.
Optionally, the resonator body and the spring member are made of the same material.
The invention also provides a photonic crystal device which comprises the photonic crystal unit cell structure.
The invention also provides a preparation method of the phonon crystal unit cell structure, which comprises the following steps:
providing a substrate, wherein the substrate comprises a substrate first surface and a substrate second surface which is oppositely arranged;
patterning the substrate from the substrate first surface to form a trench in the substrate;
patterning the substrate from the substrate second surface exposing the trench to form a resonating body and a spring member in the substrate; wherein the spring member extends from the substrate inner side to the substrate outer side, a free end of the spring member is located inside the substrate, and the resonance body is located on and in contact with the free end.
Optionally, the substrate comprises an SOI silicon wafer, wherein the SOI silicon wafer comprises a top silicon layer, an oxygen buried layer and a back lining bottom silicon; wherein the spring member is formed in the top layer silicon, the resonating body is formed in the back substrate silicon, and a free end of the spring member is in contact with the resonating body through the buried oxide layer.
Optionally, the substrate comprises a semiconductor substrate comprising a silicon substrate.
Optionally, the phononic crystal unit cell structure further comprises a test region, and the test region is formed simultaneously with the resonator.
Optionally, the spring member comprises a centrosymmetric spring member.
As described above, the photonic crystal unit cell structure, the photonic crystal device and the preparation method thereof of the present invention introduce the spring component, design a photonic crystal unit cell structure based on the spring vibrator, which can be simplified into a spring-weight system, enhance the resonance capability of the resonance body of the photonic crystal unit cell structure by using the vibration of the spring component, and effectively adjust and change the forbidden band frequency and width of the photonic crystal unit cell structure, thereby expanding the application range of the photonic crystal device.
Drawings
FIG. 1 is a schematic diagram of a process for preparing a phonon crystal cell structure according to the present invention.
FIGS. 2 to 10 show the schematic structures of the steps for preparing the phonon crystal cell structure according to the present invention.
FIG. 11 is a schematic diagram showing the morphology of a phonon crystal cell structure scanning electron microscope according to the present invention.
Fig. 12 is a schematic diagram showing the structure of another phonon crystal unit cell structure according to the present invention.
Fig. 13 shows a band simulation diagram of the phonon crystal cell structure of fig. 12.
Fig. 14 shows a schematic diagram of a spring-weight system of phonon crystal cell structure in the present invention.
Description of element reference numerals
100 SOI silicon chip
101. Top silicon
1011. Groove(s)
1012. Free end
1013. Spring body
102. Oxygen-buried layer
103. Back substrate silicon
1031. Partial resonator
1032. Resonator body
1033. Test area
104. Top silicon dioxide mask layer
105. Bottom silicon dioxide mask layer
200. First photoresist
300. Second photoresist
400. Third photoresist
110. Substrate board
111. Groove(s)
112. Free end
210. Resonator body
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1-14. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
As shown in fig. 1, the present invention provides a method for preparing a photonic crystal unit cell structure, wherein the photonic crystal unit cell structure prepared by the method is designed based on the principle of a spring oscillator, and comprises a spring component and a resonator body, the resonance capability of the resonator body is enhanced by the vibration of the spring component, and the forbidden band frequency and the width of the photonic crystal unit cell structure can be effectively adjusted and changed by adjusting the geometric parameters of the photonic crystal unit cell, so that the application range of a photonic crystal device can be enlarged.
First, a substrate is provided, wherein the substrate comprises a first surface of the substrate and a second surface of the substrate which is oppositely arranged.
Specifically, as shown in fig. 2, the substrate may include an SOI silicon wafer 100, the SOI silicon wafer 100 may include a top silicon layer 101, an oxygen buried layer 102 and a bottom silicon backing layer 103, and the SOI silicon wafer 100 may further include a top silicon dioxide mask layer 104 located on an upper surface of the top silicon layer 101 and a bottom silicon dioxide mask layer 105 located on a lower surface of the bottom silicon backing layer 103. In the present embodiment, the substrate is exemplified by the SOI silicon wafer 100, the spring member is formed in the top silicon layer 101, the resonator is formed in the back bottom silicon layer 103, the thickness of the top silicon layer 101 is related to the spring member formed later, and the thickness of the back bottom silicon layer 103 is related to the resonator formed later, but is not limited thereto. The thickness of the back substrate silicon 103 may be 10 μm to 500 μm, and in this embodiment, the thickness of the back substrate silicon 103 is 430 μm, but is not limited thereto, and may be selected according to the need, and is not limited thereto. Further, to expand the application of the phonon crystal unit cell structure, in another embodiment, the substrate may be another semiconductor substrate, for example, the semiconductor substrate may be a silicon substrate, so as to directly prepare the spring component and the resonator in the silicon substrate, and the material and the structure of the substrate are not limited herein.
Then, the substrate is patterned from the substrate first surface to form a trench in the substrate.
Specifically, as shown in fig. 3, a first photoresist 200 is coated on the upper surface of the top silicon dioxide mask layer 104, where the thickness of the first photoresist 200 may be 1.4 μm, but is not limited thereto. After exposing and developing the first photoresist 200, transferring the pattern with the spring component on the mask onto the first photoresist 200 to form a mask layer on the top silicon dioxide mask layer 104, and then etching the top silicon dioxide mask layer 104 by using a Reactive Ion Etching (RIE) process to transfer the pattern with the spring component onto the top silicon dioxide mask layer 104.
Thereafter, as shown in fig. 4, the top-layer silicon 101 may be etched by a Deep Reactive Ion Etching (DRIE) process until the buried oxide layer 102 is exposed, so as to form trenches 1011 penetrating the top-layer silicon 101, free ends 1012 of spring members located inside the top-layer silicon 101, and spring bodies 1013 in the top-layer silicon 101. The topography of the channel 1011 may include an annular groove having a relief angle to provide the relief angle phi of the spring member through the relief angle of the annular groove, as shown in fig. 12.
Thereafter, the first photoresist 200 and top silicon dioxide mask layer 104 are removed to form the topography of the spring features in the top silicon 101.
As a further example of this embodiment, the spring member may comprise a centrally symmetric spring member, i.e. the spring member is distributed with the free end 1012 of the spring member as the center of symmetry, to facilitate the application of the phonon cell structure.
Then, patterning the substrate from the second surface of the substrate to expose the trench 1011 to form the resonating body and the spring component in the substrate; wherein the spring member extends from the base inner side to the base outer side, a free end 1012 of the spring member is located inside the base, and the resonating body is located on the free end 1012 and in contact with the free end 1012.
Specifically, as shown in fig. 5, a second photoresist 300 is coated on the surface of the bottom silicon dioxide mask layer 105, and the thickness of the second photoresist 300 may be 2.0 μm, but is not limited thereto. After exposing and developing the second photoresist 300, transferring the pattern with the resonance body on the mask onto the second photoresist 300, and then etching the bottom silicon dioxide mask layer 105 by using an RIE process, so as to transfer the pattern with the resonance body onto the bottom silicon dioxide mask layer 105.
As shown in fig. 6, the second photoresist 300 is removed on the underlying silicon dioxide mask layer 105.
As a further example of this embodiment, the photonic crystal unit cell structure further includes a test region, and the test region is formed simultaneously with the resonating body. The test area has a certain thickness, so that the stability of the phonon crystal unit cell structure can be further improved.
Specifically, as shown in fig. 7 to 10, in this embodiment, the phonon crystal cell structure includes the test region 1033, and the test region 1033 is formed simultaneously in the process of forming the resonator 1032, so as to reduce the process steps, that is, exposing and developing the third photoresist 400 to form the pattern of the resonator 1032, and the mask layer formed by the third photoresist 400 includes the pattern of the test region 1033.
As shown in fig. 7, a third photoresist 400 is coated on the surface of the back substrate silicon 103 and the bottom silicon dioxide mask layer 105, and the thickness of the third photoresist 400 may be 8.0 μm, but is not limited thereto. The third photoresist 400 is exposed and developed, and a pattern having the resonating body 1032 and the test region 1033 is transferred onto the third photoresist 400.
Next, as shown in fig. 8, the third photoresist 400 is used as a mask layer to perform a first etching on the back silicon 103, where the etching depth may be 230 μm, so as to form a part of the resonance body 1031 of the phonon cell structure.
Next, as shown in fig. 9, the third photoresist 400 is removed, and the patterned bottom silicon dioxide mask layer 105 is used as a mask layer, and a DRIE process is used to etch the back silicon substrate 103 to a depth of 200 μm to expose the buried oxide layer 102, so as to form the resonance body 1032 and the test region 1033 of the phonon cell structure.
Finally, as shown in fig. 10, the buried oxide layer 102 is etched using HF vapor to form the final phonon cell structure.
Of course, in another embodiment, the test region 1033 may be omitted, the underlying silicon dioxide mask layer 105 may be directly patterned, the mask layer of the resonator 1032 is formed, the back substrate silicon 103 is etched to expose the buried oxide layer 102, so as to form the resonator 1032, and then the buried oxide layer 102 is etched by HF vapor to form the final phonon cell structure, which may be selected as required, but not limited thereto.
Fig. 11 is a schematic diagram showing the morphology of a scanning electron microscope of the phonon crystal unit cell structure prepared in the present invention. The photonic crystal unit cell structure in the present invention can be used to prepare a photonic crystal device, the kind of which is not limited here.
The performance and principles of the phononic crystal cell structure of the present invention are illustrated by specific examples below.
As shown in fig. 12, a photonic crystal unit cell structure is provided, which can be prepared by the above-described preparation method, but is not limited thereto. The phononic crystal unit cell structure includes a substrate 110 and a resonator 210. Wherein the substrate 110 includes a substrate first surface and an oppositely disposed substrate second surface, the substrate 110 includes a groove 111 extending from the substrate first surface to the substrate second surface and penetrating the substrate 110 to form a spring component of the unit cell structure in the substrate 110, the spring component extends from the substrate inner side to the substrate outer side, and a free end 112 of the spring component is located at the substrate inner side; the resonating body 210 is located on the first surface of the substrate and the resonating body 210 is in contact with the free end 112 of the spring member.
As a further example of this embodiment, the resonator body 210 may include a cylindrical resonator body, and the radius r of the cylindrical resonator body may range from 2 μm to 80 μm, and the height h of the cylindrical resonator body may range from 10 μm to 500 μm.
In particular, the geometry and material of the resonating body 210 determines the weight mass of the spring component and thus the performance of the spring component. The shape of the resonator 210 may be, but not limited to, a cylindrical shape, and the structural parameters and shape of the resonator 210 may be selected according to the need, which is not limited herein.
As a further example of this embodiment, the number of spring rings n of the spring member may include 2 to 50; the range of the spring width Deltar of the spring member may include 2 μm to 50 μm; the range of the interval width delta of the spring member may include 2 μm to 50 μm; the unfilled angle phi of the spring member may range from 10 deg. to 90 deg..
Specifically, the number n of spring rings of the spring member is determined by the number of grooves 111, the spring width Δr of the spring member is determined by the width of the spring body, the interval width Δof the spring member is determined by the width of the grooves 111, and the unfilled corner Φ of the spring member is determined by the morphology of the grooves 111, i.e., the unfilled corner Φ is the size of the opening reserved for serving as the connecting portion of the spring member when the grooves 111 are formed. The number of spring rings n, the spring width Δr, the gap width Δand the unfilled angle Φ, and the thickness th and lattice constant a of the substrate 110 determine the performance of the spring component. Wherein the range of the thickness th of the substrate 110 may include 10 μm to 500 μm, and the range of the lattice constant a may include 200 μm to 500 μm. The structural parameters of the spring member and the substrate 110 are not limited thereto, and may be specifically selected as needed.
As a further example of this embodiment, the resonant body and the spring member may be made of the same material; the spring member may comprise a centrosymmetric spring member.
In particular, the spring members may employ the same spring width Δr, the same spacing width Δand the same unfilled angle Φ to form a centrosymmetric spring member, but is not limited thereto. The resonance body and the spring component can be made of the same material. As shown in fig. 12, the geometric parameters of the phononic crystal unit cell structure are: the radius r=40 μm and the height h=270 μm of the cylindrical resonator; the spring ring number n=5, the interval width delta=20 μm, the spring width delta r=10 μm and the unfilled angle phi=90° of the spring component; the thickness th=150 μm of the substrate 110; the lattice constant a=300 μm. The band simulation diagram shown in fig. 13 is obtained by simulating the photonic crystal unit cell structure by using a finite element method, and the band gap of the photonic crystal unit cell structure is 1.074MHz-1.127MHz, so that the frequency range of the acoustic band gap can be effectively reduced by using the photonic crystal unit cell structure based on the spring oscillator, and the application range of the photonic crystal unit cell structure is enlarged.
The present invention also provides a spring-weight system schematic diagram concerning the phonon crystal unit cell structure, as shown in fig. 14.
Specifically, when the incident elastic wave is transmitted inside the phonon crystal cell structure, the incident wave is transmitted to the resonator through the spring member. To simplify the energy band diagram calculation process, the phonon crystal cell structure based on spring vibrator is simplified into the spring-weight system in fig. 14. Wherein the simplified resonanceThe equivalent mass of the body is a spring vibrator, and the equivalent mass m, the rigidity k and the vertical displacement x of the spring vibrator are equivalent; equivalent mass M, stiffness K and displacement X of the spring component; substituted by excited p o In a non-damping system of sin (ωt), the equation is:
displacing the resonating body by x=x 0 sin (ωt) and spring displacement x=x 0 sin (ωt) is substituted into the formula, and the amplitude of harmonic response of the resonant system obtained by simplification is as follows:
wherein |z (ω) |=mm (ω 1 2 -ω 2 )(ω 2 2 -ω 2 ) ω1 and ω2 are characteristic frequencies of the phononic crystal unit cell structure.
In summary, the photonic crystal unit cell structure, the photonic crystal device and the preparation method thereof of the invention introduce the spring component, design a photonic crystal unit cell structure based on the spring vibrator, can be simplified into a spring-weight system, can enhance the resonance capability of the resonance body of the photonic crystal unit cell structure by utilizing the vibration of the spring component, can effectively adjust and change the forbidden band frequency and the width of the photonic crystal unit cell structure, and can expand the application range of the photonic crystal device. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (9)
1. A phononic crystal unit cell structure, the phononic crystal unit cell structure comprising:
the device comprises a substrate and a free end, wherein the substrate comprises a substrate first surface and a substrate second surface which is oppositely arranged, the substrate comprises a groove which extends from the substrate first surface to the substrate second surface and penetrates through the substrate so as to form a spring component of the phonon crystal unit cell structure in the substrate, the spring component extends from the inner side of the substrate to the outer side of the substrate, and the free end of the spring component is positioned at the inner side of the substrate;
and the resonance body is positioned on the first surface of the substrate and is contacted with the free end of the spring component.
2. A phononic crystal unit cell structure according to claim 1, characterized in that: the spring member comprises a centrosymmetric spring member.
3. A phononic crystal unit cell structure according to claim 1, characterized in that: the resonance body and the spring member are made of the same material.
4. A photonic crystal device, characterized by: the photonic crystal device comprising the photonic crystal unit cell structure of any one of claims 1 to 3.
5. A method of preparing a phononic crystal unit cell structure comprising the steps of:
providing a substrate, wherein the substrate comprises a substrate first surface and a substrate second surface which is oppositely arranged;
patterning the substrate from the substrate first surface to form a trench in the substrate;
patterning the substrate from the substrate second surface exposing the trench to form a resonating body and a spring member in the substrate; wherein the spring member extends from the substrate inner side to the substrate outer side, a free end of the spring member is located inside the substrate, and the resonance body is located on and in contact with the free end.
6. The method for preparing a phononic crystal unit cell structure according to claim 5, characterized in that: the substrate comprises an SOI silicon wafer, wherein the SOI silicon wafer comprises top silicon, a buried oxide layer and back lining bottom silicon; wherein the spring member is formed in the top layer silicon, the resonating body is formed in the back substrate silicon, and a free end of the spring member is in contact with the resonating body through the buried oxide layer.
7. The method for preparing a phononic crystal unit cell structure according to claim 5, characterized in that: the substrate includes a semiconductor substrate including a silicon substrate.
8. The method for preparing a phononic crystal unit cell structure according to claim 5, characterized in that: the phononic crystal unit cell structure also includes a test region, and the test region is formed simultaneously with the resonating body.
9. The method for preparing a phononic crystal unit cell structure according to claim 5, characterized in that: the spring member comprises a centrosymmetric spring member.
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