CN112083182A - Application of two-dimensional material in speed sensor - Google Patents
Application of two-dimensional material in speed sensor Download PDFInfo
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- CN112083182A CN112083182A CN202010796653.0A CN202010796653A CN112083182A CN 112083182 A CN112083182 A CN 112083182A CN 202010796653 A CN202010796653 A CN 202010796653A CN 112083182 A CN112083182 A CN 112083182A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P3/00—Measuring linear or angular speed; Measuring differences of linear or angular speeds
- G01P3/42—Devices characterised by the use of electric or magnetic means
- G01P3/50—Devices characterised by the use of electric or magnetic means for measuring linear speed
- G01P3/54—Devices characterised by the use of electric or magnetic means for measuring linear speed by measuring frequency of generated current or voltage
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Abstract
The invention discloses an application of a two-dimensional material in a speed sensor, wherein the two-dimensional material has in-plane spontaneous polarization, a double-layer stacking structure of the two-dimensional material can generate ferroelectric-antiferroelectric phase change under mechanical motion, the application of the ferroelectric-antiferroelectric phase change based on the double-layer two-dimensional material is also disclosed, and the speed sensor comprising the double-layer two-dimensional material is further disclosed. The invention utilizes the ferroelectric phase transition of the two-dimensional material to improve the mechanical displacement measurement precision of the nanometer scale, drives the interlayer slippage of the two-dimensional material by the external action, realizes the mutual conversion of the two-dimensional material from the ferroelectric phase and the antiferroelectric phase, converts the mechanical energy of the interlayer slippage of the two-dimensional material into the bidirectional pulse current, is simultaneously suitable for the mechanical movement in the one-way and back-and-forth modes, can reflect the interlayer mechanical slippage speed by measuring the size and the frequency of the pulse current, has larger output current, is convenient for measuring the interlayer relative movement speed, and has wide measurement speed range.
Description
Technical Field
The invention belongs to the technical field of nano materials, and particularly relates to an application of a two-dimensional material in a speed sensor.
Background
With the miniaturization and miniaturization of electronic devices and the development of flexible electronic materials, research and development of a new generation of nano-functional devices are urgently needed, and the traditional three-dimensional materials are difficult to meet the requirements of nano-electromechanical systems due to the limitations of the volume and the performance under the micro scale. The two-dimensional material represented by graphene, black phosphorus alkene and molybdenum disulfide has natural nanometer thickness and good flexibility, particularly the singular electrical property and mechanical behavior, is widely concerned by material researchers and is expected to become a core material of electromechanical coupling in a nanometer electromechanical system.
The nano electromechanical system is usually small in size and high in precision requirement, and mechanical movement of the nano electromechanical system at a low scale is often difficult to accurately measure. The nano speed sensor has a simple structure, can convert weak mechanical motion into an electric signal, and indirectly measures the mechanical motion under a microscale by measuring the output electric signal based on the relation between the mechanical motion and the electric signal, thereby better realizing the electromechanical coupling effect and the specific function of a nano electromechanical system. However, the electrical signals generated based on piezoelectric materials are generally weak and do not reflect well the long-range translational motion at the microscopic level.
The output of an electrical signal from a polarized material is primarily related to the rate of change of its polarization. The traditional piezoelectric or ferroelectric material is difficult to be made into a nano-scale film due to the brittleness and depolarization field effect, and even if the traditional piezoelectric or ferroelectric material is a two-dimensional material with spontaneous polarization, when an electric signal is output by utilizing the piezoelectric effect, the electric polarization is changed only within a certain range, and meanwhile, the strain applied from the outside is generally continuously reciprocating. This results in their low sensitivity to external movements, which are very limited in the way they are moved.
Disclosure of Invention
Based on the problems, in order to improve the measurement accuracy of the mechanical movement speed under the nanoscale, the ferroelectric phase transition of the two-dimensional material is utilized, the defects of the piezoelectric material can be overcome, the application of the two-dimensional material in the speed sensor is provided, the system is simple in structure and single in material, the mechanical energy of the two-dimensional material in interlayer slippage can be converted into bidirectional pulse current, the system is suitable for unidirectional and reciprocating mechanical movement, the output current signal is large, and the interlayer mechanical slippage speed can be reflected by measuring the size and the frequency of the pulse current.
A first object of the present invention is to provide the use of a two-dimensional material in a speed sensor.
A second object of the present invention is directed to a speed sensor comprising a double layer of two-dimensional material.
The specific technical scheme of the application is as follows: use of a two-dimensional material in a speed sensor.
Further, the application of the two-dimensional material in the speed sensor is that the two-dimensional material has in-plane spontaneous polarization, and the double-layer structure can generate ferroelectric-antiferroelectric phase change under mechanical motion.
Further, the ferroelectric-antiferroelectric phase change based on the two-dimensional material double-layer stacking structure is applied to the speed sensor.
Further, the two-dimensional material comprises one of tin selenide and tin sulfide.
The invention provides a speed sensor which comprises a double-layer two-dimensional material, wherein the two-dimensional material has in-plane spontaneous polarization, and the double-layer structure can generate ferroelectric-antiferroelectric phase change under mechanical motion.
Further, the double-layer two-dimensional material is one of double-layer tin selenide and double-layer tin sulfide.
Furthermore, the speed sensor is used for respectively connecting the double-layer two-dimensional material with a part which needs to measure the speed, or directly depositing the double-layer two-dimensional material on the surface of the part, and the upper and lower layers of two-dimensional material are connected with an ammeter through a lead to form a loop.
The use method of the speed sensor drives the interlayer slippage of the double-layer two-dimensional material through the external action, realizes the mutual conversion of the double-layer two-dimensional material from a ferroelectric phase and an antiferroelectric phase, converts the mechanical energy of the interlayer slippage of the two-dimensional material into bidirectional pulse current, and reflects the interlayer mechanical slippage speed by measuring the size and the frequency of the pulse current. The relative movement between the two layers of material is reflected by the sliding movement between the two layers of material and the output electrical signal is measured directly to reflect the movement.
The invention utilizes the two-dimensional material tin selenide or tin sulfide with the double-layer black phosphorus alkene-like structure, because of the influence of Van der Waals interaction between layers, different polarization arrangement modes tend to be adopted under different double-layer stacking structures, and the relative slippage between the layers can change the stacking structure so as to change the polarization arrangement mode.
When the polarization arrangement directions of the double-layer tin selenide two-dimensional material in the fold direction are the same, the double-layer stacking structure is a ferroelectric phase, and the total polarization can reach 40 mu C/cm2(ii) a When the polarization of the two-dimensional materials are arranged in opposite directions, they are in an antiferroelectric phase, and although the in-plane polarization value of each layer is large, the overall polarization of the two-layer system is almost 0 because the polarization reversals cancel each other out. Based on the two-dimensional material, interlayer slippage of the two-dimensional material is driven through external action, and mutual transformation of a ferroelectric phase and an anti-ferroelectric phase can be realized theoretically, so that a bidirectional pulse electric signal is output. The measurement of the electrical signal is often simpler than the direct measurement of the mechanical movement, and the output electrical signal can be used to reflect the mechanical movement mode of the external action according to the relationship between the electrical signal and the mechanical movement.
The basic structure of the invention is Van der Waals stacking of double-layer tin selenide and tin sulfide two-dimensional materials, the mutual conversion of ferroelectric phase and anti-ferroelectric phase leads the edge in the sawtooth direction vertical to the direction of folding to generate larger displacement current density, gold or platinum electrodes are plated on the edge in the sawtooth direction of the double-layer system, and a connecting lead forms a loop to lead out the displacement current generated by phase change.
Compared with the prior art, the invention has the following beneficial effects:
1. the output current is large, and the measurement is convenient. The output current of the nano structure mainly depends on the change rate of the electric polarization of the two-dimensional material, and is estimated by the interlayer slip speed of 1mm/s, and the double-layer tin selenide material can realize the polarization from about 40 mu C/cm within 50 nanoseconds2The transition from the ferroelectric phase to the antiferroelectric phase with a polarization of almost 0 theoretically outputs a short-circuit current of 330 pA. Whereas the polarization of two-dimensional materials based on the piezoelectric effect can only be varied within a certain range and the rate of applied strain is limited.
2. The measuring speed range is wide. The friction coefficient of interlayer slippage of the two-dimensional material is extremely low due to weak interlayer interaction. The speed of the interlayer slip can vary over a very large range of 100nm/s to 10 m/s.
3. A simple linear relationship. The interlayer slip speed and the polarization change rate are in a linear relation, namely the output pulse current magnitude and the slip speed are in a linear relation. The sliding speed is adjusted to be directly reflected as the magnitude of the output pulse current. Moreover, the larger the slip speed is, the more times of ferroelectric to antiferroelectric and inverse phase transition in unit time are generated, that is, the more times of pulse current is output, and the easier the measurement is.
4. Meanwhile, the device is suitable for long-range one-way or short-range reciprocating sliding mechanical motion. Because the phase change from ferroelectric to antiferroelectric is reversible, the upper layer material can generate different double-layer stacking structures on the lower layer material regardless of unidirectional translation or reciprocating motion, and the size of the output electric signal is independent of the relative motion mode. Even if the translation of the one-way long-distance is adopted, the two-way pulse current can be generated, and the positive phase change process and the reverse phase change process respectively correspond to different current directions.
Drawings
FIG. 1 is a schematic view of a single layer structure of the two-dimensional materials tin selenide and tin sulfide of the present invention;
FIG. 2 is a schematic diagram of four highly symmetric stacks of double layer tin selenide;
fig. 3 is an energy relationship between a ferroelectric phase and an antiferroelectric phase of a double-layer tin selenide, where the atomic images correspond to points on an energy relationship curve one-to-one;
FIG. 4 is a schematic diagram of the speed sensor of the present invention;
FIG. 5 is a schematic diagram of the output pulsed current signal of the present invention;
fig. 6 is a linear relationship between the speed of mechanical motion and the output current in the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Controlled interlayer slippage of two-dimensional materials is feasible, and has been achieved in tribology in a variety of two-dimensional materials. Single-layer and few-layer tin selenide and tin sulfide two-dimensional materials have been successfully prepared in experiments and are reported for many times. The phase transition between ferroelectric and antiferroelectric utilized in the present invention has been confirmed by accurate first-principles calculations.
Example 1
Fig. 1 is a schematic view of a single-layer structure of a tin selenide two-dimensional material utilized in an embodiment of the invention. As shown in fig. 1, spontaneous polarization of a single-layer structure of tin selenide two-dimensional material is aligned in-plane along the direction of the wrinkles. Under the bi-layer stack, the co-and counter-polarization arrangements can form a ferroelectric state (FE) and an antiferroelectric state (AFE), respectively. The single-layer tin selenide or tin sulfide is a two-dimensional folded structure, and due to the lack of symmetry of the structure, the modulus in the folded direction (armchair direction) is small, the structure has high spontaneous polarization intensity, and the piezoelectric performance of the structure is far superior to that of the traditional material and other two-dimensional materials. Their double layer stack can generate Ferroelectric (FE) with the same polarization direction of the upper and lower layers and Antiferroelectric (AFE) with opposite polarization directions. Under different double-layer stacks, the ferroelectric state and the antiferroelectric state can stably exist in a local range.
Fig. 2 is a schematic diagram of four highly symmetric stacks of double-layer tin selenide. Where a box represents a lattice of tin selenide material, it can be seen that the relative positions of the lattices of the upper and lower layers of tin selenide are different stacks, with ferroelectric states more stable than antiferroelectric states for AA and AC stacks. Whereas for AB and AD stacks the antiferroelectric state is more stable. The transition from the ferroelectric state to the antiferroelectric state and vice versa occurs when the upper two-dimensional material is displaced relative to the lower two-dimensional material, for example from an AC stack to an AB stack.
Fig. 3 is an energy relationship between a stable ferroelectric phase and a stable antiferroelectric phase of the double-layer tin selenide, where the atomic images correspond to points on an energy relationship curve one-to-one. For the double-layer tin selenide, the ferroelectric state is more stable under the condition of AC stacking, which corresponds to the point of (r) in the figure, but the antiferroelectric state is more stable under the condition of AB stacking, which corresponds to the point of (r) in the figure, and a potential barrier of about 18meV exists between the two, namely the ferroelectric state and the antiferroelectric state of the double-layer tin selenide can stably exist under different stacking conditions. Because the weak Van der Waals interaction exists between layers in the double-layer stacking structure, the friction coefficient between the layers is extremely low, and the interlayer slippage can be easily realized. The interlayer slip velocity of two-dimensional materials can vary over a wide range of 100nm/s to 10 m/s. Corresponding to the atomic image of fig. 3, the upper two-dimensional material is relatively displaced with respect to the lower two-dimensional material, and the transition from the ferroelectric state to the antiferroelectric state occurs during the transition from the AC stack to the AB stack. Therefore, by changing the stacking sequence of the interlayer slip, namely the slip of the upper layer material relative to the lower layer, the mutual conversion from the ferroelectric structure to the antiferroelectric structure can be realized, and the electric signal is output, and the mechanical movement between the ferroelectric structure and the antiferroelectric structure can be reflected by detecting the electric signal.
The speed sensor is constructed as follows: and respectively connecting the two-layer two-dimensional material with a part required to measure the speed, or directly depositing the two-dimensional material on the surface of the part. The two are then brought together a sufficient distance to ensure that the interaction between the two-dimensional materials is van der Waals. And the sawtooth-shaped edge of the two-dimensional material is connected with a lead, the lead is connected with an ammeter, and the upper and lower two-dimensional materials are connected with the ammeter through the lead to form a loop. The interlayer slippage of the double-layer two-dimensional material is driven by the external action, and the relative movement speed can be reflected by the current in the measuring circuit.
The two-dimensional material is constructed by taking tin selenide as an example, and as shown in fig. 4, the structural diagram of the speed sensor is shown. The lower layer of tin selenide is deposited on the surface of a certain device serving as a substrate, the upper layer of tin selenide is stacked on the lower layer, the two layers interact through Van der Waals force, and the upper layer of tin selenide is connected with another tested device in actual use. First principle calculations show that the presence of the substrate does not alter the above-mentioned conclusions regarding the stability of the ferroelectric and antiferroelectric states, so that structural phase transitions between the ferroelectric and antiferroelectric states are also present. The upper and lower layers of tin selenide are respectively connected through a wire to form a loop. The part that links to each other with the upper strata does translational motion relatively lower floor's basement under external drive to drive upper tin selenide and slide on the lower floor, when upper tin selenide and lower floor's tin selenide produced relative slip with a certain speed, because interact between the layer, the electric polarization of upper tin selenide can constantly overturn. For a two-layer system, there is a constant phase transition between the ferroelectric state and the antiferroelectric state. At the edges perpendicular to the direction of the corrugations, Maxwell's displacement currents are generated. In the present system, the displacement current density is related only to the rate of change of polarization. The greater the speed of the slip, the greater the current peak and the longer the distance of the slip per unit time, which means that the greater the number of phase transitions, the greater the frequency of the electrical signal. The double-layer tin selenide, the upper layer material makes translational sliding movement under the drive of external force, the sequence of double-layer stacking is continuously changed in the sliding process, displacement current is generated at the edge vertical to the direction of the fold, the magnitude of the current is detected by a sensitive current meter, and the mechanical movement speed between layers can be reflected by the output current characteristics.
Fig. 5 is a schematic diagram of a pulse current signal output by the present invention, and as shown in fig. 5, after a speed sensor including a double-layer tin selenide is constructed, an upper layer material is driven to make translational sliding motion by an external action, and the pulse current signal is correspondingly output. The output short-circuit current is a bidirectional pulse signal, when the upper layer of the double-layer tin selenide slips at the speed of 1mm/s, the bidirectional pulse current signal is generated, the signal takes 440 ns as a period, the duration of each pulse time is about 50 ns, and the polarization is realized from about 40 mu C/cm2The phase transition from the ferroelectric phase to the antiferroelectric phase with the polarization of almost 0 is a process of suddenly changing from a larger polarization value to zero polarization in a very short time, the change rate of the polarization is very large, the peak value of the output pulse current can reach 330pA and is far larger than the piezoelectric current output by molybdenum disulfide based on the piezoelectric effect, and positive and negative pulses respectively correspond to the phase transition from the ferroelectric phase to the antiferroelectric phase and the inverse phase transition.
Fig. 6 is a linear relationship between the speed of mechanical motion and the output current in the present invention. A current of 330pA corresponds to a relative speed of 1 mm/s. The measurable speed range is wide due to the low friction coefficient between two-dimensional materials. In particular, the larger the speed, the larger the short-circuit current theoretically and the larger the frequency of the pulse current, the easier the signal can be measured. According to the graph, the relative mechanical movement speed of the two-dimensional material under the microcosmic condition can be estimated by detecting the peak value of the output electric signal. The upper and lower layers of two-dimensional materials are respectively connected with the nano devices which need to be tested to move relatively, so that the movement between the devices can be indirectly reflected through current signals.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (9)
1. The application of a two-dimensional material in a speed sensor, wherein the two-dimensional material has in-plane spontaneous polarization, and a double-layer structure can generate ferroelectric-antiferroelectric phase change under mechanical motion.
2. Use according to claim 1, characterised in that the ferroelectric-antiferroelectric phase transition based on a two-dimensional material double-layer stacked structure is used in a velocity sensor.
3. The use of any of claims 1-2, wherein the two-dimensional material comprises one of tin selenide, tin sulfide.
4. Use according to claim 3, wherein the two-dimensional material is tin selenide.
5. A speed sensor comprising a bilayer of two-dimensional material possessing in-plane spontaneous polarization, the bilayer being capable of undergoing a ferroelectric-antiferroelectric phase transition upon mechanical motion.
6. The speed sensor of claim 5, wherein the double layer of two-dimensional material is one of a double layer of tin selenide, a double layer of tin sulfide.
7. The speed sensor of claim 6, wherein the double layer two dimensional material is a double layer tin selenide.
8. The speed sensor according to claim 5, wherein the two layers of two-dimensional materials are respectively connected with a component which needs to measure speed, or the two layers of two-dimensional materials are directly deposited on the surface of the component, and the two layers of two-dimensional materials are connected with an ammeter through a lead to form a loop.
9. The use method of the speed sensor according to any one of claims 5 to 8, wherein the interlayer slippage of the two-dimensional material is driven by external action, the mutual conversion of the two-dimensional material from the ferroelectric phase and the antiferroelectric phase is realized, the mechanical energy of the interlayer slippage of the two-dimensional material is converted into bidirectional pulse current, and the interlayer mechanical slippage speed is reflected by measuring the magnitude and frequency of the pulse current.
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| CN113140648A (en) * | 2021-04-28 | 2021-07-20 | 东南大学 | Heterojunction semiconductor photoelectric detector and preparation method thereof |
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