CN112082970A - Terahertz wave focal plane imaging system based on micro-plasma array - Google Patents
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Abstract
The invention discloses a terahertz wave focal plane imaging system based on a microplasma array, which comprises a direct-current power supply, wherein a current-limiting resistor, an ammeter and a power supply control module are connected in series on the direct-current power supply to form a loop, the power supply control module is electrically connected with the focal plane imaging array, two ends of the power supply control module are connected with a filter and a phase-locked amplifier in parallel to form loops, the filter, the phase-locked amplifier and the power supply control module are connected with a capacitor in series on a common loop, and the power supply control module and the phase-locked amplifier are also connected with a computer together. The terahertz wave focal plane imaging system based on the micro-plasma array solves the problems that the existing terahertz wave focal plane detector array is high in price, and insufficient in working temperature, bandwidth, response speed, response rate and NEP, and the focal plane imaging array of the neon glow discharge detector is large in NEP, low in resolution and large in power consumption.
Description
Technical Field
The invention belongs to the technical field of terahertz wave detection systems, and particularly relates to a terahertz wave focal plane imaging system based on a microplasma array.
Background
Terahertz (THz) electromagnetic waves can penetrate through many dielectric materials and nonpolar liquids, such as clothing, plastics, paper and the like, so that objects which are opaque to visible light can be subjected to perspective imaging; because the photon energy is very low and does not produce harmful photoionization to organisms, the THz imaging technology is a safe imaging method and has wide application prospect in the aspects of security inspection, nondestructive inspection, biomedical diagnosis and the like. THz imaging techniques can be divided into pulsed wave imaging and continuous wave imaging.
For the THz pulse wave imaging technology, most THz imaging systems adopt an ultrashort laser pumping photoconductive antenna or a nonlinear crystal to generate THz pulses, the THz pulses are irradiated on a sample after being focused, and the movement of the sample is controlled by a two-dimensional translation table to realize point-by-point scanning imaging. While scanning imaging techniques can ensure a high signal-to-noise ratio, the imaging speed is slow. A typical commercial imaging apparatus based on the THz time domain spectroscopy system performs pulsed imaging of a 20mm x 20mm sample with a scan step size of 0.5mm, taking more than 3 hours. In 1996, a THz pulse real-time imaging technology is provided by Q.Wu and X.C.Zhang, the image acquisition time of THz imaging is effectively shortened, and the practicability of the THz imaging technology is greatly improved. However, because the THz pulse is expanded to directly irradiate a sample during imaging, and the power of the existing pulse THz source is very small, the signal-to-noise ratio of an image obtained by using the pulse THz real-time imaging technology is not high, and only a very small object can be imaged. The pulse THz imaging needs a femtosecond laser, and an imaging system is complex; the data processing is also very complex.
Compared with the THz pulse wave imaging technology, although the THz continuous wave imaging system using the THz source with fixed frequency and the single detector can only give the intensity information of the THz wave after passing through the sample and cannot provide the depth, frequency spectrum and time domain information of the substance, the THz continuous wave imaging system is small in size, simple in structure and relatively low in price. However, such THz continuous wave imaging system still needs to use a two-dimensional electric translation stage to mechanically move the sample at the THz focal position to realize point-by-point scanning imaging, and cannot realize real-time imaging. For example, a 20mm by 20mm sample is pulsed at a scan speed of 0.2mm, taking several minutes.
Due to the high power of the THz continuous wave source, THz waves can be expanded to irradiate the sample, and then the THz waves transmitted (or reflected) from the sample are collected and focused on a focal plane imaging array so as to obtain a real-time THz image of the sample. The THz wave real-time imaging technology is an effective way for promoting the THz imaging technology to be widely applied in the fields of safety inspection, nondestructive testing, biomedical diagnosis and the like.
The core component in the THz wave real-time imaging system is a THz wave focal plane detector array which is used for receiving THz waves carrying sample information. THz wave focal plane detector arrays commonly used at present are Bolometer arrays, pyroelectric detector arrays, Schottky diode arrays, CMOS arrays, Field Effect Transistor (FET) arrays and the like. These detector arrays are not only very expensive, but also suffer from a number of performance deficiencies. For example, the bandwidth of the Bolometer array can reach 0.2-30THz, and the Noise Equivalent Power (NEP) can reach 3pW/Hz1/2However, a cryogenic cooling system is required, resulting in a large volume; limited by the thermal time constant, the response speed is slow, and real-time imaging is difficult to realize. Although microbolometer arrays can operate at room temperature, their bandwidth is greatly reduced (typically)<5THz), NEP increases to several tens to several hundreds of pW/Hz1/2. The pyroelectric detector array can operate at room temperature with a spectral response in the range of 0.1-30THz, but the NEP is very large. Electronic devices such as silicon schottky diode array, CMOS array and FET array can also work at room temperature, but generally can only detect frequency bands below 1THz, and NEP is large, generally tens to hundreds of pW/Hz1/2. Table 1 compares the performance of several common room temperature THz focal plane imaging arrays.
TABLE 1 Performance comparison of common Room temperature terahertz focal plane imaging arrays
The glow discharge detector is a new type of THz wave detector. The method utilizes low-voltage inert gas direct current discharge to generate plasma, and under the action of THz electromagnetic waves, electron energy in the plasma is increased to cause high-excitation-state inert gas atoms to be ionized, so that current in a loop is increased. Since the current increment is proportional to the THz wave power, the THz wave can be detected therewith.
In 2007, n.s.kopeika reported that a glow discharge detector made of a neon lamp (abbreviated as neon lamp glow discharge detector) was inexpensive) The response rate of a neon lamp glow discharge detector for detecting THz electromagnetic waves in a 100GHz wave band is 20V/W, the NEP is 104pW/Hz1/2. To increase imaging speed, an 8 × 8 GDD array of neon lamps was manufactured in 2011 by n.s. Because of the large diameter (6mm) of the neon lamp, the size of the neon lamp glow discharge detector array is large, and the image resolution is low; moreover, the neon lamp glow discharge detector has small response rate and large NEP, and can only form a very fuzzy THz image for a very simple object even if a very complicated imaging method and an image reconstruction algorithm are adopted, and further real-time imaging can not be realized. When 64 neon lamps are turned on simultaneously, the power consumption is large, and a heat dissipation system is needed; and 64 sets of data acquisition and amplification circuits are needed, and the system is complex.
Disclosure of Invention
The invention aims to provide a terahertz wave focal plane imaging system based on a microplasma array, which solves the problems that the existing terahertz wave focal plane detector array is high in price, insufficient in working temperature, bandwidth, response speed, response rate and NEP, and the neon lamp glow discharge detector focal plane imaging array is large in NEP, low in resolution and large in power consumption.
The technical scheme adopted by the invention is as follows: the terahertz wave focal plane imaging system based on the microplasma array comprises a direct-current power supply, wherein a current-limiting resistor, an ammeter and a power supply control module are connected in series on the direct-current power supply to form a loop, the power supply control module is electrically connected with the focal plane imaging array, two ends of the power supply control module are connected with a filter and a phase-locked amplifier in parallel to form loops, the filter, the phase-locked amplifier and the power supply control module are connected with a capacitor in series on a common loop, and the power supply control module and the phase-locked amplifier are also connected with a computer together.
The present invention is also characterized in that,
the focal plane imaging array comprises an upper panel, a middle panel and a lower panel which are sequentially packaged from top to bottom, wherein m x n through holes for incidence of terahertz waves are etched in the middle panel, inert gas is filled in the m x n through holes to form an air chamber array, m rows of x electrodes are uniformly arranged on the lower surface of the upper panel at intervals, the m rows of x electrodes correspond to m rows of air chambers of the air chamber array one by one, n rows of y electrodes are uniformly arranged on the upper surface of the lower panel at intervals, the n rows of y electrodes correspond to n rows of air chambers of the air chamber array one by one, and the n rows of y electrodes and the m rows of x electrodes are electrically connected to the power supply.
The air chambers are all square or round, the width of each air chamber is 10 mu m-1mm, and the depth of each air chamber, namely the thickness of the middle panel, is 10 mu m-1 mm.
The upper panel is made of quartz glass, and the width of the x electrode is 1/10-1/3 of the width of the gas chamber.
The width of the y electrode is not less than the width of the gas cell.
The pressure of inert gas in the gas chamber is 103-105Pa, inert gas is penning mixed gas composed of one or more of He, Ne, Ar, Ke and Xe.
The x electrode and the y electrode are both made of ITO thin films or metal films.
The size of the capacitor is
Where f is the modulation frequency of the incident terahertz wave, and R is the equivalent resistance in parallel with the signal path.
The filter is a band-pass filter, and the resonance frequency of the filter is set to the modulation frequency of the incident terahertz wave.
The integration time of the lock-in amplifier is 0.1ms-1 s.
The invention has the beneficial effects that:
1. the invention utilizes the microplasma array generated by the direct current discharge of inert gas in the array space formed by a plurality of array elements with micron-scale discharge space to carry out real-time imaging on the THz wave carrying object information. Compared with the conventional plasma, the THz wave focal plane real-time imaging array based on the microplasma array has higher response rate, smaller NEP and extremely high resolution due to the fact that the size of the microplasma is limited to have higher plasma density and stability.
2. In the invention, the focal plane imaging array works by adopting a mode of sequentially starting detection point by point, and only one pixel works each time, so the power consumption is low.
3. The micro-plasma discharge also follows Paschen's law, so the THz wave focal plane imaging array based on the micro-plasma array can operate under the atmospheric pressure condition without a vacuum system required by conventional plasma generation, and the device is light and portable, thereby not only saving the cost, but also saving a large amount of vacuum obtaining time.
4. Compared with the prior art, the THz band-based broadband spectrum response method is wide in response band, and the spectrum response range covers the whole THz band; meanwhile, the ionization rate of the gas is linearly increased along with the increase of the power of the incident THz wave, so that when the power of the THz electromagnetic wave is high, the focal plane imaging array cannot be damaged, and the saturation phenomenon cannot occur.
Drawings
FIG. 1 is a schematic structural diagram of a terahertz wave focal plane imaging system based on a microplasma array according to the present invention;
FIG. 2 is a schematic structural diagram of a focal plane imaging array in a terahertz wave focal plane imaging system based on a microplasma array according to the present invention;
FIG. 3 is a schematic structural diagram of an upper panel in a terahertz wave focal plane imaging system based on a microplasma array according to the present invention;
FIG. 4 is a schematic structural diagram of a middle panel in a terahertz wave focal plane imaging system based on a microplasma array according to the present invention;
FIG. 5 is a schematic structural diagram of a lower panel in a terahertz wave focal plane imaging system based on a microplasma array according to the present invention.
In the figure, 1 is a focal plane imaging array, 2 is a power supply control module, 3 is an ammeter, 4 is a current limiting resistor, 5 is a direct current power supply, 6 is a capacitor, 7 is a filter, 8 is a phase-locked amplifier, 9 is a computer, 10 is an upper panel, 11 is a middle panel, 12 is a lower panel, 13 is an x electrode, 14 is an air chamber, and 15 is a y electrode.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention provides a terahertz wave focal plane imaging system based on a microplasma array, which comprises a direct current power supply 5 and direct current as shown in figure 1The source 5 is connected in series with a current limiting resistor 4, an ammeter 3 and a power supply control module 2 to form a loop, the power supply control module 2 is electrically connected with a focal plane imaging array 1, two ends of the power supply control module 2 are connected in parallel with a filter 7 and a phase-locked amplifier 8 to form a loop, a capacitor 6 is connected in series with a common loop of the filter 7, the phase-locked amplifier 8 and the power supply control module 2, and the power supply control module 2 and the phase-locked amplifier 8 are also connected in common with a computer 9. Wherein the size of the capacitor 6 depends on the modulation frequency of the THz wave,
f is the modulation frequency of the incident terahertz wave, which is adjusted from 2Hz to 20kHz when in use, and R is an equivalent resistance connected with the signal path in parallel; the filter 7 is a band-pass filter whose resonance frequency is set to the modulation frequency of the incident THz wave; the integration time of the lock-in amplifier 8 is adjustable from 0.1ms to 1 s.
As shown in fig. 2, the focal plane imaging array 1 includes an upper panel 10, a middle panel 11 and a lower panel 12 which are sequentially packaged up and down, wherein the y electrode 15 and the x electrode 13 are both electrically connected to the power supply control module 2, and the x electrode 13 and the y electrode 15 are powered by the control circuit inside the power supply control module.
As shown in fig. 4, the middle panel 11 is made of a material with good mechanical strength, good heat resistance and good air tightness, m × n through holes for incidence of terahertz waves are etched on the middle panel 11, inert gas is filled in the m × n through holes to form an array of air chambers 14, the air chambers 14 are all square or circular, the width of each air chamber 14 is 10 μm-1mm, and the depth of each air chamber 14, that is, the thickness of the middle panel 11 is 10 μm-1 mm; an array of air cells 14 is filled 103-105Pa, and packaging the upper panel 10, the middle panel 11 and the lower panel 12 together, wherein the inert gas is penning mixed gas consisting of one or more of He, Ne, Ar, Ke and Xe.
As shown in fig. 3, the upper panel 10 is made of a material with good mechanical strength, good heat resistance and high transmittance for THz wave, and is generally made of quartz glass, and m parallel electrodes with equal spacing are made of ITO thin film or metal film on the lower surface of the upper panel as x electrodes 13, the m rows of x electrodes 13 correspond to m rows of air cells 14 of the air cell 14 array one by one, and the width of the x electrodes 13 is 1/10-1/3 of the width of the air cells 14 (pixels), so as to make the incident THz wave incident into the air cells 14 as much as possible to act on the microplasma.
As shown in fig. 5, the lower panel 12 is made of a material with good mechanical strength and good heat resistance, the upper surface is provided with equidistant metal electrodes not less than the width of the gas chamber 14 as y electrodes 15, the n rows of y electrodes 15 correspond to the n rows of gas chambers 14 of the gas chamber 14 array one by one, and the purpose is to make the incident THz wave act with the microplasms and then reflect back to the gas chamber 14 to act with the microplasms again, so as to enhance the response rate.
When in work, the power supply control module 2 is firstly switched on any pair of electrodes (x)i，yj) Adjusting the discharge voltage as xiAnd yjWhen the voltage reaches the breakdown voltage of the inert gas in the gas chamber 14, the gas discharges to generate micro plasma, and the voltage is adjusted to enable the discharge current displayed by the ammeter 3 to be between 0.1mA and 5mA, so that stable micro plasma can be generated. At this time, if THz wave is irradiated to the microplasma, the ionization rate of the inert gas is increased, causing a change in the current in the loop, thereby causing a change in the bias voltage across it. The variation of the voltage is proportional to the power of the received THz wave, so that the power of the THz wave can be reflected by the variation of the voltage. The capacitor 6 can filter the direct current voltage applied at the two ends of the gas cell 14, then the voltage signal of the change at the two ends of the discharge gas cell 14 caused by the modulated incident THz wave is input into the phase-locked amplifier 8 after being filtered by the filter 7, and simultaneously the TTL modulation signal of the THz wave is input into the phase-locked amplifier 8. The phase-locked amplifier 8 starts to read data 10 μ s after the air chamber (i, j) emits light, and inputs the integrated signal into the computer 9, which reflects the power of the THz wave measured by the pixel (i, j). The computer 9 is used to start the scanning imaging program, and the power supply control module 2 will switch on the electrode y1Then sequentially switching on the electrodes x respectively1、x2、……、xm(ii) a Disconnect electrode y1Turning on the electrode y2Then sequentially switching on the electrodes x respectively1、x2、……、xm(ii) a … …, respectively; disconnect electrode yn-1Turning on the electrode ynThen sequentially switching on the electrodes x respectively1、x2、……、xm. Therefore, the THz waves received by the detection of each pixel are independently opened, and the point-by-point scanning of the THz light carrying the sample information is realized. Imaging software in the computer 9 records the power equivalent value of the THz wave at the pixel position and the corresponding position, and the THz image of the sample can be obtained by displaying the THz wave power equivalent value by using a gray scale image or a pseudo color image. In the allowable range of the heating power of the focal plane imaging array 1, a plurality of or even all the pixels can be simultaneously started, and a faster imaging speed is obtained.
Through the mode, the terahertz wave focal plane imaging system based on the micro-plasma array performs real-time imaging on THz waves carrying object information through the micro-plasma array generated by direct current discharge of the inert gas in the array space formed by the array elements with the micron-scale discharge space. Compared with the conventional plasma, the THz wave focal plane real-time imaging array based on the microplasma array has higher response rate, smaller NEP and extremely high resolution due to the fact that the size of the microplasma is limited to have higher plasma density and stability. In the invention, the focal plane imaging array works by adopting a mode of sequentially starting detection point by point, and only one pixel works each time, so the power consumption is low. The micro-plasma discharge also follows Paschen's law, so the THz wave focal plane imaging array based on the micro-plasma array can operate under the atmospheric pressure condition without a vacuum system required by conventional plasma generation, and the device is light and portable, thereby not only saving the cost, but also saving a large amount of vacuum obtaining time. Compared with the prior art, the THz band-based broadband spectrum response method is wide in response band, and the spectrum response range covers the whole THz band; meanwhile, the ionization rate of the gas is linearly increased along with the increase of the power of the incident THz wave, so that when the power of the THz electromagnetic wave is high, the focal plane imaging array cannot be damaged, and the saturation phenomenon cannot occur.
Claims (10)
1. Terahertz wave focal plane imaging system based on little plasma array, a serial communication port, including DC power supply (5), current-limiting resistor (4) concatenate on DC power supply (5), ampere meter (3) and power supply control module (2) and constitute the return circuit, power supply control module (2) electricity is connected with focal plane imaging array (1), the both ends of power supply control module (2) are parallelly connected with wave filter (7) and lock-in amplifier (8) and all constitute the return circuit, capacitor (6) have been concatenated on the common return circuit of wave filter (7) and lock-in amplifier (8) and power supply control module (2), power supply control module (2) and lock-in amplifier (8) still are connected with computer (9) jointly.
2. The microplasma array based terahertz wave focal plane imaging system of claim 1, the terahertz wave imaging device is characterized in that the focal plane imaging array (1) comprises an upper panel (10), a middle panel (11) and a lower panel (12) which are sequentially packaged up and down, m x n through holes for incidence of terahertz waves are etched in the middle panel (11), inert gas is filled in the m x n through holes to form an air chamber (14) array, m columns of x electrodes (13) are uniformly arranged on the lower surface of the upper panel (10) at intervals, the m columns of x electrodes (13) correspond to m columns of air chambers (14) of the air chamber (14) array one by one, n rows of y electrodes (15) are uniformly arranged on the upper surface of the lower panel (12) at intervals, the n rows of y electrodes (15) correspond to n rows of air chambers (14) of the air chamber (14) array one by one, and the n rows of y electrodes (15) and the m columns of x electrodes (13) are electrically connected to.
3. The microplasma-array-based terahertz wave focal plane imaging system according to claim 2, wherein the gas chambers (14) are all square or circular, the width of each gas chamber (14) is 10 μm-1mm, and the depth of each gas chamber (14), namely the thickness of the middle panel (11), is 10 μm-1 mm.
4. The microplasma-array-based terahertz wave focal plane imaging system of claim 3, wherein the upper panel (10) is made of quartz glass, and the width of the x-electrode (13) is 1/10-1/3 of the width of the gas chamber (14).
5. The microplasma-array-based terahertz wave focal plane imaging system of claim 3, wherein the width of the y-electrode (15) is not less than the width of the gas chamber (14).
6. The microplasma-array-based terahertz wave focal plane imaging system of claim 2, wherein the inert gas pressure in the gas chamber (14) is 103-105Pa, inert gas is penning mixed gas composed of one or more of He, Ne, Ar, Ke and Xe.
7. The microplasma-array-based terahertz wave focal plane imaging system of claim 2, wherein the x electrode (13) and the y electrode (15) are both made of an ITO thin film or a metal film.
8. The microplasma-array-based terahertz wave focal plane imaging system of claim 1, wherein the size of the capacitor (6) is
Where f is the modulation frequency of the incident terahertz wave, and R is the equivalent resistance in parallel with the signal path.
9. The microplasma-array-based terahertz wave focal plane imaging system according to claim 1, wherein the filter (7) is a band-pass filter, and the resonance frequency of the filter (7) is set to the modulation frequency of the incident terahertz waves.
10. The microplasma-array-based terahertz wave focal plane imaging system of claim 1, wherein the integration time of the lock-in amplifier (8) is 0.1ms-1 s.
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| US20040100194A1 (en) * | 2002-11-27 | 2004-05-27 | Eden J. Gary | Microdischarge photodetectors |
| CN102721468A (en) * | 2012-06-26 | 2012-10-10 | 西安理工大学 | Terahertz wave detector |
| US20130256535A1 (en) * | 2010-12-10 | 2013-10-03 | TeraOptronics B.V. | Terahertz radiation detection using micro-plasma |
| CN107064050A (en) * | 2017-04-21 | 2017-08-18 | 中国科学院微电子研究所 | A kind of continuous THz wave imaging system and its method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040100194A1 (en) * | 2002-11-27 | 2004-05-27 | Eden J. Gary | Microdischarge photodetectors |
| US20130256535A1 (en) * | 2010-12-10 | 2013-10-03 | TeraOptronics B.V. | Terahertz radiation detection using micro-plasma |
| CN102721468A (en) * | 2012-06-26 | 2012-10-10 | 西安理工大学 | Terahertz wave detector |
| CN107064050A (en) * | 2017-04-21 | 2017-08-18 | 中国科学院微电子研究所 | A kind of continuous THz wave imaging system and its method |
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