CN112054771A - Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar - Google Patents
Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar Download PDFInfo
- Publication number
- CN112054771A CN112054771A CN202010758217.4A CN202010758217A CN112054771A CN 112054771 A CN112054771 A CN 112054771A CN 202010758217 A CN202010758217 A CN 202010758217A CN 112054771 A CN112054771 A CN 112054771A
- Authority
- CN
- China
- Prior art keywords
- module
- transimpedance amplifier
- array chip
- channel
- amplifier array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/495—Counter-measures or counter-counter-measures using electronic or electro-optical means
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a transimpedance amplifier array chip with multi-channel double-switch control and a laser radar, wherein the transimpedance amplifier array chip comprises at least one group of transimpedance amplifier units, each transimpedance amplifier unit comprises a first module and a second module, each transimpedance amplifier module is positioned in the first module or the second module, and a plurality of channels are connected between the first module and the second module; the first module comprises a plurality of first switches; the second module comprises a plurality of second switches; the same channel is coupled with the first switch and the second switch respectively. The invention can reduce the crosstalk in the chip and improve the signal quality of the system. The wiring in the chip can be randomly arranged, so that the chip is suitable for different layout environments, and the layout area is saved. The technical scheme of the invention greatly expands the number of the switch gating channels and increases the freedom of typesetting of the channel wiring layout.
Description
Technical Field
The invention relates to the field of chip design, in particular to a transimpedance amplifier array chip with multi-channel double-switch control and a laser radar.
Background
The transimpedance amplifier TIA is used for converting and amplifying the weak photocurrent generated by the photoelectric sensor into a voltage signal and outputting the voltage signal to a subsequent circuit for processing. Therefore, the transimpedance amplifier TIA is a core component of the receiving end of the optical communication system, and the core indexes such as noise basically determine the performance of the whole receiving system.
Since the transimpedance amplifier TIA has a signal amplification function, in particular, in a multi-channel transimpedance amplifier array, once noise is introduced into a channel, the noise is amplified, and the performance of a receiving system is damaged.
Meanwhile, the multiple channels of the multi-channel transimpedance amplifier array usually have multiple wirings, and the wirings have parasitic capacitance, which brings crosstalk once unnecessary signals are introduced into the channels and disturbs the performance of a receiving system.
Therefore, how to reduce crosstalk and improve the performance of the transimpedance amplifier array chip is a problem to be solved in the prior art.
Disclosure of Invention
The technical problem solved by the invention is to reduce the crosstalk in the chip and improve the signal quality of the system.
Furthermore, the noise of the transimpedance amplifier array chip with multiple channels is reduced.
The invention discloses a transimpedance amplifier array chip with multi-channel double-switch control, which comprises at least one group of transimpedance amplifier units, wherein each transimpedance amplifier unit comprises a first module and a second module;
the first module comprises a plurality of first switches;
the second module comprises a plurality of second switches;
the same channel is coupled with the first switch and the second switch respectively.
The first switch and the second switch coupled to the same channel are turned on or off synchronously.
The first module also comprises a transimpedance amplification module; alternatively, the first and second electrodes may be,
the first module is an input module of the chip, and the second module further comprises the transimpedance amplification module.
The plurality of second switches of the second module are implemented by a multiplexer.
The first switches are coupled with the inputs of the branches of the multiplexer in a one-to-one correspondence mode.
The multiple groups of trans-impedance amplifier units are conducted according to the control time sequence.
Each group of the trans-impedance amplifier units is conducted with one channel at the same time.
The input signal of the input module comprises a single-ended input signal or a differential input signal;
the output signal of the transimpedance amplification module comprises a single-ended output signal or a differential output signal.
The first module uses a first power supply terminal and the second module uses a second power supply terminal.
The invention also discloses a laser radar which is provided with the transimpedance amplifier array chip with the multi-channel double-switch control.
The invention can reduce the crosstalk in the chip and improve the signal quality of the system. Avoiding the noise to be amplified. The wiring in the chip can be arranged at will, the flexibility is higher, the chip can adapt to different layout environments, and the layout area is saved. The invention can save the number of the trans-impedance amplifying modules, reduce the power consumption and the chip size and reduce the cost. The technical scheme of the invention greatly expands the number of the switch gating channels and increases the freedom of typesetting of the channel wiring layout.
Drawings
Fig. 1 is a schematic diagram illustrating an overall structure of a multi-channel dual-switch controlled transimpedance amplifier array chip according to the present invention.
Fig. 2 is a schematic structural diagram of the transimpedance amplifier array chip according to the first embodiment.
Fig. 3 is a schematic structural diagram of the transimpedance amplifier array chip according to the second embodiment.
Detailed Description
The following describes an implementation process of the technical solution of the present invention with reference to specific embodiments, which are not intended to limit the present invention.
In order to reduce crosstalk in the chip, the signal quality of the system is improved. Furthermore, the invention discloses a transimpedance amplifier array chip with multi-channel double-switch control, which reduces the noise of the transimpedance amplifier array chip with multi-channel. The invention provides two switches for the same channel so as to avoid crosstalk introduced by parasitic capacitance of an ungated channel.
Fig. 1 is a schematic diagram of the overall structure of a multi-channel dual-switch controlled transimpedance amplifier array chip according to the present invention.
The transimpedance amplifier array chip 100 includes one or more sets of transimpedance amplifier units 1. The current input signal IIN is connected to the input terminals of one or more sets of transimpedance amplifier units 1. The input terminal can receive multiple current signals. The current signal is converted into a voltage signal through the pre-amplifier stage trans-impedance amplifier unit 1, and the voltage signal is further amplified by the post-amplifier PA and then enters the buffer stage BF for output. The Current Ref Current reference circuit is used for providing bias Current of each stage of module.
The transimpedance amplifier unit 1 is the foremost stage of the ROIC, and is essentially constituted by a feedback resistor between the operational amplifier group and the input-output stage, and has low input and output impedances. The gain of the operational amplifier is beneficial to obtaining low input impedance and improving the bandwidth. The output signal VOUT has low output impedance, can adapt to large load change, and can be connected with an output load in an AC coupling or DC coupling mode.
The transimpedance amplifier unit 1 includes a first module 10 and a second module 20, a transimpedance amplifier module is located in the first or second module, and a plurality of channels are connected between the first module and the second module;
the first module 10 comprises a plurality of first switches 11;
the second module 10 comprises a plurality of second switches 21;
the same channel is coupled to the first switch 11 and the second switch 21, respectively.
Fig. 2 is a schematic structural diagram of the transimpedance amplifier array chip according to the first embodiment.
The first module 10 is an input module of the chip, and includes a plurality of the first switches 11, and an input signal of the input module includes a single-ended input signal or a differential input signal. The second module 20 includes the plurality of second switches 21 and the transimpedance amplification module 30, and an output signal of the transimpedance amplification module includes a single-ended output signal or a differential output signal. Each first switch 11 directly corresponds to a second switch 21, i.e. the first and second switches are coupled to the same channel in pairs. The plurality of second switches 21 are coupled to the same transimpedance amplification module 30. The first switch and the second switch coupled to the same channel are turned on or off synchronously. In a preferred embodiment, each group of the transimpedance amplifier units conduct only one channel at a time, and different channels conduct sequentially. Therefore, the non-conducted channel is in a completely off state, and the signal received by the non-gated channel is intercepted at the first switch, so that the noise of the channel cannot enter the transimpedance amplification module 30, and the noise is prevented from being amplified to influence subsequent signal output. More importantly, because the non-conducted channel is in the off state, the signal on the non-conducted channel is greatly attenuated due to the existence of the two switches, and further the crosstalk to the conducted channel is reduced, so that the signal quality of the system is improved. The non-conducting on-channel signal may be due to parasitic capacitance. The channels are realized by wiring, and if crosstalk exists, the wire spacing and the length of the wiring need to meet specific requirements to ensure the quality of output signals. Because crosstalk is restrained in the scheme, wiring of the channels can be randomly distributed, the flexibility is higher, the method can adapt to different layout environments, and the layout area is saved. In addition, since the transimpedance amplification module 30 in this embodiment is disposed behind all the channels, and one of the multiple channels is selected to be connected, only one transimpedance amplification module 30 may be correspondingly disposed in multiple channels, and each connected channel is coupled to the transimpedance amplification module 30, and it is not necessary to correspondingly dispose one transimpedance amplification module in each channel, which saves the number of transimpedance amplification modules 30, reduces power consumption and chip size, and reduces cost.
The first module 10 uses a first power source terminal and the second module 20 uses a second power source terminal. The use of different power terminals can prevent the signal of the second module from generating crosstalk to the first module via the same power terminal, compared with the scheme of using the same power terminal.
Similar to the first embodiment, fig. 3 is a schematic structural diagram of a second embodiment of the transimpedance amplifier array chip.
The first module 10 includes a plurality of transimpedance amplifier modules 30 and a plurality of first switches 11, and the second module 20 includes a plurality of second switches 21.
In one embodiment, the plurality of second switches 21 of the second module 20 can be implemented by a one-out-of-multiple multiplexer. The first switches 11 are coupled to the inputs of the branches of the multiplexer in a one-to-one correspondence. A gating signal is transmitted to all the first switches and the second switches, and corresponding branches of the first switches and the second switches coupled to the same channel are synchronously switched on or off.
In this embodiment, the transimpedance amplification module 30 in the first module receives the input signal from the input module of the chip, performs transimpedance amplification, and then transmits the amplified signal to the post-amplifier PA via the second module or the output module including both PA and BF through the turned-on path.
As shown in fig. 1, the transimpedance amplifier array chip 100 includes a plurality of sets of transimpedance amplifier units 1 that are turned on according to a control timing. That is, different transimpedance amplifier units can be turned on in a polling mode, only one channel in one transimpedance amplifier unit is turned on at each moment, and the turn-on sequence can be set according to a control time sequence so as to adapt to different requirements.
The transimpedance amplifier array chip disclosed by the invention can be applied to various photoelectric receiving systems, for example, laser radars.
The invention realizes one selection of N channels by arranging a group of the transimpedance amplifier units, and can also realize N-by-M channel selection by M groups of the transimpedance amplifier units. In a large array, the crosstalk is kept low, the noise is reduced, and the signal quality of the system is improved.
The technical scheme of the invention greatly expands the number of the switch gating channels and increases the freedom of typesetting of the channel wiring layout.
The above-mentioned embodiments are only exemplary for implementing the present invention, and are not intended to limit the scope of the present invention, and various obvious modifications and equivalents may be made by those skilled in the art within the scope of the present invention, which is defined by the claims appended hereto.
Claims (10)
1. A transimpedance amplifier array chip with multi-channel double-switch control is characterized by comprising at least one group of transimpedance amplifier units, wherein each transimpedance amplifier unit comprises a first module and a second module;
the first module comprises a plurality of first switches;
the second module comprises a plurality of second switches;
the same channel is coupled with the first switch and the second switch respectively.
2. The transimpedance amplifier array chip according to claim 1, wherein the first switch and the second switch coupled to a same channel are turned on or off synchronously.
3. The transimpedance amplifier array chip according to claim 1, having multi-channel dual switch control, wherein the first module further comprises a plurality of the transimpedance amplifier modules; alternatively, the first and second electrodes may be,
the first module is an input module of the chip, and the second module further comprises the transimpedance amplification module.
4. The transimpedance amplifier array chip according to claim 1, having multi-channel dual switch control, wherein the plurality of second switches of the second module are implemented by a multiplexer.
5. The transimpedance amplifier array chip according to claim 4, wherein the plurality of first switches are coupled in a one-to-one correspondence with the inputs of the respective branches of the multiplexer.
6. The transimpedance amplifier array chip according to claim 1, wherein a plurality of sets of the transimpedance amplifier units are turned on at a control timing.
7. The transimpedance amplifier array chip according to claim 1, 2 or 6, wherein the transimpedance amplifier unit turns on one channel at a time.
8. The transimpedance amplifier array chip according to claim 3, wherein the input signal of the input module comprises a single-ended input signal or a differential input signal;
the output signal of the transimpedance amplification module comprises a single-ended output signal or a differential output signal.
9. The transimpedance amplifier array chip according to claim 1, having multi-channel dual switch control, wherein the first module uses a first power supply terminal and the second module uses a second power supply terminal.
10. A lidar having a transimpedance amplifier array chip with multi-channel dual switch control according to any of claims 1-9.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010758217.4A CN112054771A (en) | 2020-07-31 | 2020-07-31 | Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010758217.4A CN112054771A (en) | 2020-07-31 | 2020-07-31 | Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112054771A true CN112054771A (en) | 2020-12-08 |
Family
ID=73601152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010758217.4A Pending CN112054771A (en) | 2020-07-31 | 2020-07-31 | Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112054771A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114879208A (en) * | 2022-06-30 | 2022-08-09 | 北京摩尔芯光半导体技术有限公司 | Frequency modulation continuous wave laser radar system |
-
2020
- 2020-07-31 CN CN202010758217.4A patent/CN112054771A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114879208A (en) * | 2022-06-30 | 2022-08-09 | 北京摩尔芯光半导体技术有限公司 | Frequency modulation continuous wave laser radar system |
CN114879208B (en) * | 2022-06-30 | 2022-11-01 | 北京摩尔芯光半导体技术有限公司 | Frequency modulation continuous wave laser radar system |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108627815B (en) | Unity gain buffer with 2 state | |
CN102820857B (en) | Transimpedance amplifier with broad band and high gain | |
CN201533301U (en) | Photosensitive receiving circuit for optoelectronic coupler | |
CN1018312B (en) | Transmission line switch | |
CN101660944A (en) | Optical collecting system with high signal-to-noise ratio and large dynamic range | |
CN104426614A (en) | Current voltage conversion circuit, light receiving apparatus, and light transmission system | |
CN112054771A (en) | Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar | |
CN102918766B (en) | Transimpedance amplifier, integrated circuit, and system | |
CA2481668A1 (en) | Signal management system | |
CN212627817U (en) | Trans-impedance amplifier array chip with multi-channel double-switch control function and laser radar | |
CN103840775A (en) | Limiting amplifier allowing direct-current offset eliminating function to be achieved on sheet | |
EP4174518A1 (en) | Laser receiving device and laser radar | |
US6525858B1 (en) | Optical receiver and optical network system using thereof | |
CN111600660B (en) | Optical communication device, OLT equipment and communication link | |
EP1444860B1 (en) | A transmission lines arrangement | |
CN110557099A (en) | Staggered feedback type limiting amplifier based on Cherry Hooper structure | |
CN113346952B (en) | Burst transmission coupling circuit of optical module | |
CN216595946U (en) | Polling ADC collection system | |
CN213210506U (en) | Infrared detection system | |
CN210724725U (en) | 8 select 2 switch | |
CN112671377B (en) | Time delay device | |
JP4771767B2 (en) | Control method of MOS transistor | |
CN106776437B (en) | Communication circuit, working method thereof and analog signal acquisition and output system | |
CN115885470A8 (en) | Operational amplifier, driving circuit, interface chip and electronic equipment | |
CN116131937A (en) | Semi-active power acquisition circuit and active wavelength division device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |