CN112051523B - Magnetic field sensing device - Google Patents
Magnetic field sensing device Download PDFInfo
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- CN112051523B CN112051523B CN201910486900.4A CN201910486900A CN112051523B CN 112051523 B CN112051523 B CN 112051523B CN 201910486900 A CN201910486900 A CN 201910486900A CN 112051523 B CN112051523 B CN 112051523B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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Abstract
The invention provides a magnetic field sensing device, which comprises a plurality of magnetic resistance sensors, a detection magnetic field generating element, a plurality of magnetization direction setting elements and a current generator. Each magnetoresistive sensor has a major axis and a minor axis that are perpendicular to each other. The current generator is used for selectively applying a first current to the detection magnetic field generating element so that the detection magnetic field generating element generates a reference magnetic field for the magnetic resistance sensors. The magnetic field direction of the reference magnetic field is parallel to the short axis. The current generator is used for selectively applying a second current to enable the magnetization direction setting elements to generate a plurality of setting magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the long axis.
Description
Technical Field
The present invention relates to a magnetic field sensing device, and more particularly, to a magnetic field sensing device with a built-in magnetic field detecting element.
Background
Along with the development of technology, electronic products with navigation and positioning functions are more and more diversified. Electronic compasses provide functionality comparable to conventional compasses in the field of applications for automotive navigation, aerospace and personal hand-held devices. In order to realize the function of the electronic compass, the magnetic field sensing device becomes an essential electronic component.
When the magnetic field sensing device is completed, it is typically sent to a detection system for calibration. However, if a large-scale detection magnetic field is to be generated to detect a plurality of magnetic field devices at a time, the detection system requires a large volume and a large current. In addition, a lot of transportation and detection time are required in the detection process, so that the production cost and the production time of the magnetic field sensing device are increased.
Disclosure of Invention
The invention provides a magnetic field sensing device which has a self-detection function and lower production cost.
In one embodiment of the present invention, a magnetic field sensing device is provided, which includes a plurality of magnetoresistive sensors, a detecting magnetic field generating element, a plurality of magnetization direction setting elements, and a current generator. Each magnetoresistive sensor has a first major axis and a first minor axis that are perpendicular to each other. The detection magnetic field generating element is arranged beside the magnetic resistance sensors and overlapped with the magnetic resistance sensors. The magnetization direction setting elements are arranged beside the magnetic resistance sensors and overlapped with the magnetic resistance sensors. The current generator is used for selectively applying a first current to the detection magnetic field generating element so that the detection magnetic field generating element generates a reference magnetic field for the magnetic resistance sensors. The current generator is used for selectively applying a second current to enable the magnetization direction setting elements to generate a plurality of setting magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the first long axis of each magnetoresistive sensor.
In an embodiment of the invention, the detecting magnetic field generating element includes a plurality of conductors, and the plurality of conductors are disposed in parallel with each other. Each conductor further includes a second major axis and a second minor axis that are perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor.
In an embodiment of the invention, the detecting magnetic field generating element includes a plurality of conductor sets. Each conductor set further includes a plurality of conductors disposed in parallel with each other. Each conductor further includes a second major axis and a second minor axis that are perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor. These conductor sets are arranged in series with each other.
In one embodiment of the present invention, in each conductor set, a forward projection range is defined and covers all conductors in the corresponding conductor set. These forward projection ranges do not overlap each other.
In one embodiment of the present invention, in each conductor set, a forward projection range is defined and covers all conductors of the corresponding conductor set. These orthographic projection ranges overlap each other.
In an embodiment of the invention, the plurality of conductor sets includes at least one first conductor set and at least one second conductor set. The plurality of conductors in the first conductor set are a plurality of first conductors. The plurality of conductors in the second conductor set are a plurality of first conductors. The first conductors and the second conductors are arranged to cross each other.
In an embodiment of the invention, the conductor sets include a single first conductor set and a single second conductor set.
In an embodiment of the invention, the conductor sets include a plurality of first conductor sets and a plurality of second conductor sets.
In an embodiment of the invention, each of the magnetization direction setting elements has a third major axis and a third minor axis perpendicular to each other. The third major axis is perpendicular to the first major axis of the magnetoresistive sensor. The magnetoresistive sensors further include a plurality of first magnetoresistive sensors disposed in parallel and a plurality of second magnetoresistive sensors disposed in parallel. Each first magneto-resistive sensor is arranged in series with a corresponding second magneto-resistive sensor. The magnetization direction setting elements further include a first magnetization direction setting element and a second magnetization direction setting element. The first magnetization direction setting element is disposed to overlap the first magneto-resistive sensors, and the second magnetization direction setting element is disposed to overlap the second magneto-resistive sensors.
In an embodiment of the invention, the magnetization direction setting elements are disposed between the magnetoresistive sensors and the detecting magnetic field generating element.
In an embodiment of the invention, the magnetic field sensing device further includes a first insulating layer and a second insulating layer. The first insulating layer is located between the magnetoresistive sensors and the magnetization direction setting elements. The second insulating layer is located between these magnetization direction setting elements and the detection magnetic field generating element.
In an embodiment of the invention, the magneto-resistive sensor is an out-of-phase magneto-resistive sensor.
Based on the above, in the magnetic field sensing device according to the embodiment of the invention, the reference magnetic field is generated to the magneto-resistive sensor by the detection magnetic field generating element, and the reference magnetic field can be used to correct the sensitivity and orthogonality of the magneto-resistive sensor, so that the magnetic field sensing device can realize the self-detection function.
In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the invention.
Fig. 2 is a schematic cross-sectional view of the section A-A' in fig. 1.
FIGS. 3A and 3B illustrate different layout methods of the anisotropic magnetoresistive sensor of FIG. 1.
Fig. 4 to 6 are schematic circuit layouts of the detecting magnetic field setting element according to different embodiments of the present invention.
Description of the reference numerals
100: a magnetic field sensing device;
110: magneto-resistive sensor, anisotropic magneto-resistive sensor;
112: a first magneto-resistive sensor;
114: a second magneto-resistive sensor;
120. 120a to 120c: detecting a magnetic field generating element;
130: a magnetization direction setting element;
132: a first magnetization direction setting element;
134: a second magnetization direction setting element;
140: a current generator;
150. 160: an insulating layer;
A-A': a section plane;
c: a conductor;
c1: a first conductor;
c2: a second conductor;
CS: a conductor set;
CS1, CS1b, CS1c: a first conductor set;
CS2, CS2b, CS2c: a second conductor set;
d: an extension direction;
D1-D3: a direction;
FF: a ferromagnetic film;
h: an external magnetic field;
H M : setting a magnetic field;
H R : a reference magnetic field;
m: a magnetization direction;
PR, PR1, PR2, PR1b, PR2b: orthographic projection range;
SB: a shorting bar;
SD: sensing a direction;
i: a current;
I 1 : a first current;
I 1 /2: half of the first current;
I 2 : and a second current.
Detailed Description
Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
For convenience of description, the magnetic field sensing device according to the embodiment of the invention can be considered as being located in a space formed by the direction D1, the direction D2 and the direction D3, wherein the directions D1, D2 and D3 are perpendicular to each other.
Fig. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the invention. Fig. 2 is a schematic cross-sectional view of the section A-A' in fig. 1. FIGS. 3A and 3B illustrate different layout methods of the anisotropic magnetoresistive sensor of FIG. 1.
Referring to fig. 1 and 2, in the present embodiment, the magnetic field sensing device 100 includes a plurality of magnetoresistive sensors 110, a detecting magnetic field generating element 120, a plurality of magnetization direction setting elements 130, a current generator 140, and a plurality of insulating layers 150 and 160. The above elements are described in detail in the following paragraphs.
The magneto-resistive sensor 110 referred to in the embodiments of the present invention refers to a sensor whose resistance can be correspondingly changed by a change in an external magnetic field. The magnetoresistive sensor 110 may be an anisotropic magnetoresistive sensor (Anisotropic Magneto-Resistive resistor, AMR resistor). Each magnetoresistive sensor 110 has a first major axis and a first minor axis that are perpendicular to each other, wherein the first major axis (not shown) and the first minor axis (not shown) are, for example, parallel to directions D1, D2, respectively. Referring to fig. 3A and 3B, the anisotropic magneto-resistance sensor 110 has a barbershop (barbershop) structure, that is, a plurality of shorting bars (electrical shorting bar) SB extending at an angle of 45 degrees with respect to the extending direction D of the anisotropic magneto-resistance sensor 110 are disposed on the ferromagnetic film (ferromagnetic film) FF, which is the main body of the anisotropic magneto-resistance sensor 110, and the extending direction of the ferromagnetic film FF is the extending direction of the anisotropic magneto-resistance sensor 110. The sensing direction SD of the anisotropic magneto-resistive sensor 110 is perpendicular to the extension direction D. In addition, opposite ends of the ferromagnetic film FF may be made in a pointed shape (tapered).
In the embodiment of the present invention, the detection magnetic field generating element 120 and the magnetization direction setting element 130 are any one of a coil, a wire, a metal sheet, a conductor, or a combination thereof that can generate a magnetic field by energization. The detection magnetic field generating element 120 is, for example, a detection magnetic field generating coil. In the present embodiment, the detecting magnetic field generating element 120 includes a plurality of parallel conductors C, for example, but not limited to, two. Each conductor C has a second major axis (not shown) and a second minor axis (not shown) perpendicular to each other, wherein the second major axis and the second minor axis are parallel to the directions D1, D2, respectively. On the other hand, the magnetization direction setting elements 130 are, for example, metal conductor plates, the number of which is, for example, two, and the two magnetization direction setting elements 130 are referred to as first and second magnetization direction setting elements 132, 134, respectively. Each magnetization direction setting element has a third long axis (not shown) and a third short axis (not shown) perpendicular to each other, wherein the third long axis and the third short axis are parallel to the directions D2, D1, respectively.
The "major axis" is defined as a reference axis parallel to the long side of the element and passing through the center point of the element, and the "minor axis" is defined as another reference axis parallel to the short side of the element and passing through the center point of the element.
In the embodiment of the present invention, the current generator 140 refers to an electronic device for providing current.
In the embodiment of the present invention, the material of the insulating layers 150 and 160 is, for example, silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride or other materials with insulating function, which is not limited to the present invention.
To illustrate the configuration effect of the magnetic field sensing device 100 of the present embodiment, the following paragraphs first describe the basic principle of the magnetic field sensing device 100 of the present embodiment to measure a magnetic field.
The anisotropic magneto-resistive sensor 110 may set its magnetization direction by the magnetization direction setting element 130 before the external magnetic field H starts to be measured. In fig. 3A, the magnetization direction setting element 130 may generate a magnetic field along the extending direction D (or long axis direction) by energization so as to cause the anisotropic magnetoresistive sensor 110 to have the magnetization direction M.
Then, the magnetization direction setting element 130 is not energized, so that the anisotropic magnetoresistive sensor 110 starts measuring the external magnetic field H. When the external magnetic field H is absent, the magnetization direction M of the anisotropic magneto-resistive sensor 110 is maintained in the extension direction D, and the current generator 140 can apply a current I to flow from the left end to the right end of the anisotropic magneto-resistive sensor 110, the current I near the shorting bar SB flows perpendicular to the extension direction of the shorting bar SB, so that the current I near the shorting bar SB flows 45 degrees to the magnetization direction M, and the resistance value of the anisotropic magneto-resistive sensor 110 is R.
When an external magnetic field H is oriented in a direction perpendicular to the extending direction D, the magnetization direction M of the anisotropic magneto-resistive sensor 110 is deflected in the direction of the external magnetic field H, so that the included angle between the magnetization direction and the current I flowing near the shorting bar is greater than 45 degrees, and at this time, the resistance value of the anisotropic magneto-resistive sensor 110 changes by- Δr, i.e., becomes R- Δr, i.e., the resistance value becomes smaller, wherein Δr is greater than 0.
However, as shown in fig. 3B, when the extending direction of the shorting bar SB in fig. 3B is set in a direction of 90 degrees with respect to the extending direction of the shorting bar SB in fig. 3A (in this case, the extending direction of the shorting bar SB in fig. 3B still forms 45 degrees with the extending direction D of the anisotropic magneto-resistive sensor 110), and when there is an external magnetic field H, the magnetization direction M is still deflected in the direction of the external magnetic field H, and the angle between the magnetization direction M and the current I flowing near the shorting bar SB is smaller than 45 degrees, so that the resistance value of the anisotropic magneto-resistive sensor 110 becomes r+Δr, that is, the resistance value of the anisotropic magneto-resistive sensor 110 becomes larger.
When the magnetization direction M of the anisotropic magnetoresistive sensor 110 is set to the reverse direction shown in fig. 3A by the magnetization direction setting element 130, the resistance value of the anisotropic magnetoresistive sensor 110 of fig. 3A under the external magnetic field H becomes r+Δr thereafter. When the magnetization direction setting element 130 sets the magnetization direction M of the anisotropic magnetoresistive sensor 110 to the reverse direction shown in fig. 3B, the resistance value of the anisotropic magnetoresistive sensor 110 of fig. 3B in the external magnetic field H becomes R- Δr.
Therefore, in the present embodiment, the magnetic field sensing device 100 is configured as a wheatstone bridge by using four magneto-resistive sensors 110, and one skilled in the art can adapt the magneto-resistive sensors 110 according to the above or other different circuit designs and the resistance change of the magneto-resistive sensors 110 due to the external magnetic field, so as to correspondingly measure the signal of the magnetic field component of the external magnetic field H in a specific direction. In other embodiments, not shown, the magnetic field sensing device comprises more than four magneto-resistive sensors 110, and forms a plurality of wheatstone full bridges or half bridges to measure the signals of the magnetic field components of the external magnetic field H in different specific directions. Alternatively, in other embodiments, the magnetic field sensing device includes one to three magneto-resistive sensors 110, and in these embodiments, the magnetic field sensing device can know the change of the magnetic field by just a response signal generated by the magneto-resistive sensors 110 to the change of the external magnetic field H. The present invention is not limited by the number of magnetoresistive sensors 120 and their circuitry design.
The arrangement and corresponding effects of the elements in the magnetic field sensing device 100 of the present embodiment will be described in detail in the following paragraphs.
Referring to fig. 1 and 2, in the present embodiment, the detecting magnetic field generating elements 120 are disposed on the magneto-resistive sensors110 and are arranged alongside the magnetoresistive sensors 110. Specifically, the first major axis and the first minor axis of each magnetoresistive sensor 110 are respectively parallel to the second major axis and the second minor axis of the corresponding conductor C in the detection magnetic field generating element 120, and each magnetoresistive sensor 110 falls within the orthographic projection range of the corresponding conductor C. The current generator 140 selectively applies a first current I to the magnetic field detecting element 120 1 So that the conductors C generate a reference magnetic field H with the magnetic field direction D2 to the magneto-resistive sensors 110 R . That is to say the reference magnetic field H R Is parallel to the first short axis of magnetoresistive sensor 110. The reference magnetic field H R The same as the sensing direction of each magnetoresistive sensor 110, and is used to correct the Sensitivity (Sensitivity) and Orthogonality (orthodonity) of each magnetoresistive sensor 110.
The magnetization direction setting elements 130 are disposed beside the magnetoresistive sensors 110, and each magnetization direction setting element 130 is disposed simultaneously overlapping the corresponding magnetoresistive sensor 110 and the detecting magnetic field generating element 120. Specifically, the third major axis and the third minor axis of each magnetization direction setting element 130 are provided in parallel with the first minor axis (or the second minor axis) and the first major axis (or the second major axis) of the magnetoresistive sensor 110 (or the conductor C), respectively. Furthermore, according to the above paragraphs, the magnetic field sensing device 100 needs to set the magnetization directions of the magnetoresistive sensors 110 before measuring the magnetic field. The magnetoresistive sensors 110 may be divided into a plurality of first magnetoresistive sensors 112 and a plurality of second magnetoresistive sensors 114. The first and second magnetoresistive sensors 112 and 114 are disposed so as to overlap the first and second magnetization direction setting elements 132 and 134, respectively. Each first magnetoresistive sensor 112 is coupled in series with a corresponding second magnetoresistive sensor 114 in a bridge arm of a wheatstone bridge.
When the current generator 140 applies the second current I to the first and second magnetization direction setting elements 132 and 134 2 In this case, the first and second magnetization direction setting elements 132 and 134 generate a plurality of setting magnetic fields H having the magnetic field direction D1 or the opposite direction to the magnetic field direction D1 for the magnetoresistive sensors 110 M . That is, these set magnetic fields H M Is parallel to each magnetic fieldThe first major axis of the resistive sensor 110. Since these magnetization direction setting elements 132, 134 are arranged in an S-type circuit, the second current I 2 The current flows in the first and second magnetization direction setting elements 132, 134 are antiparallel (Anti-parallel) to each other, and these set magnetic fields H M Are also antiparallel to each other. Thus, the first magnetization direction setting element 132 may set the magnetization directions of the first magnetoresistive sensors 112 to the direction D1, and the second magnetization direction setting element 134 may set the magnetization directions of the second magnetoresistive sensors 114 to the opposite direction of the direction D1.
Referring to fig. 2, in the present embodiment, an insulating layer 150 is located between the magnetoresistive sensors 110 and the magnetization direction setting elements 130, and the insulating layer 150 covers the magnetization direction setting elements 130. An insulating layer 160 is located between these magnetization direction setting elements 130 and the detection magnetic field generating element 120.
As described above, in the magnetic field sensing device 100 of the present embodiment, the detecting magnetic field generating elements 120 are disposed beside the magnetoresistive sensors 110 and are disposed overlapping the magnetoresistive sensors 110. The detection magnetic field generating element 120 can apply a first current I by the current generator 140 1 Generating a reference magnetic field H parallel to the short axis direction of the magneto-resistive sensor 110 for the magneto-resistive sensors R This reference magnetic field H R The sensitivity and orthogonality of the magnetoresistive sensors 110 can be calibrated, so that the magnetic field sensing device 100 can perform a self-detection function. In addition, since the detecting magnetic field generating elements 120 are disposed beside the magneto-resistive sensors 110 and are relatively close to each other, the current required by the detecting magnetic field generating elements 120 is not required to be too large to generate the reference magnetic field H with sufficient intensity R That is, it does not consume too much energy during the detection process.
Meanwhile, the magnetic field sensing device 100 is suitable for detection by a standard probe system (standard probing System), and since the standard probe system has high yield and short detection time, the production cost and production time of the whole magnetic field sensing device 100 can be reduced.
It should be noted that, the following embodiments follow some of the foregoing embodiments, and descriptions of the same technical content are omitted, and reference may be made to some of the foregoing embodiments with respect to the same element names, so that the following embodiments will not be repeated.
Fig. 4 to 6 are schematic circuit layouts of the detecting magnetic field setting element according to different embodiments of the present invention.
Referring to fig. 4, the detecting magnetic field setting element 120a of fig. 4 is similar to the detecting magnetic field setting element 120 of fig. 1, and the main difference is that: the detection magnetic field setting element 120a includes a plurality of conductor sets CS. Each conductor set CS includes conductors C arranged in parallel with each other. These conductor sets CS are then arranged in series with each other. In the present embodiment, the number of the conductor sets is two, for example, which are respectively referred to as a first conductor set CS1 and a second conductor set CS2, and the conductors C in the first conductor set CS1 and the second conductor set CS2 are respectively referred to as a first conductor C1 and a second conductor C2. The number of the conductors CS1 and CS2 is four, but the present invention is not limited to the number of the conductors and the number of the conductors. In addition, in the present embodiment, each of the conductor sets CS may define a forward projection range PR, wherein the forward projection range PR is defined, for example, in the direction D3 to cover the forward projection ranges of the corresponding plurality of conductors C in the conductor set CS. For example, the forward projection range PR1 covers all the first conductors C1 in the first conductor set CS1, and the forward projection range PR2 covers all the second conductors C2 in the second conductor set CS 2. In the present embodiment, these forward projection ranges PR do not overlap each other.
Referring to fig. 5, the detecting magnetic field setting element 120b of fig. 5 is similar to the detecting magnetic field setting element 120a of fig. 4, and the main difference is that: the plurality of orthographic projection ranges PR defined by the plurality of conductor sets CS overlap each other. Specifically, the plurality of conductor sets CS include, for example, a single first conductor set CS1b (two first conductors C1 indicated by solid lines) and a single second conductor set CS2b (two second conductors C2 indicated by broken lines). For clarity, the wires directly connected to the first conductor set CS1b and themselves are shown as solid lines, while the wires directly connected to the second conductor set CS2b and themselves are shown as dashed lines. The first and second orthographic projection ranges PR1b and PR2b defined by the first and second conductor sets CS1b and CS2b overlap each other. In the embodiment, the number of the first and second conductors C1 and C2 of the first and second conductor sets CS1b and CS2b is two, but the invention is not limited thereto. In addition, in other embodiments not shown, the detecting magnetic field setting element may further have a third conductor set, and the third orthographic projection range defined by the detecting magnetic field setting element may overlap with the second orthographic projection range, for example.
Referring to fig. 5 again, from another point of view, the first and second conductors C1 and C2 of the first and second conductor sets CS1b and CS2b are disposed to intersect each other, so as to form an interdigitated arrangement. Specifically, a second conductor C2 is sandwiched between any two adjacent first conductors C1, and a first conductor C1 is sandwiched between any two adjacent second conductors C2.
Referring to fig. 6, the detecting magnetic field setting element 120c of fig. 6 is similar to the detecting magnetic field setting element 120b of fig. 5, and the main difference is that: the number of the first conductor sets CS1c is plural (e.g., three), and the number of the second conductor sets CS2c is plural (e.g., three). For clarity, the wires directly connected to the first conductor set CS1c and themselves are shown as solid lines, while the wires directly connected to the second conductor set CS2c and themselves are shown as dashed lines. In this embodiment, the first conductor sets CS1c are connected in series and then connected in series with the second conductor sets CS2 c.
In summary, in the magnetic field sensing device according to the embodiment of the invention, the detecting magnetic field generating element is disposed beside and overlapped with the plurality of magneto-resistive sensors. The detecting magnetic field generating element can be applied with a first current by the current generator to generate a reference magnetic field parallel to the short axis direction of the magnetic resistance sensors, and the reference magnetic field can be used for calibrating the sensitivity and the orthogonality of the magnetic resistance sensors, so that the magnetic field sensing device can realize a self-detecting function. In addition, since the detection magnetic field generating elements are arranged beside the magnetic resistance sensors, the distance between the detection magnetic field generating elements and the magnetic resistance sensors is quite close, the current required by the detection magnetic field generating elements is not required to be too large to generate a reference magnetic field with enough intensity, and the energy consumption in the detection process is low.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.
Claims (12)
1. A magnetic field sensing device, comprising:
a plurality of magnetoresistive sensors, each of the magnetoresistive sensors having a first major axis and a first minor axis that are perpendicular to each other;
the detection magnetic field generating element is arranged beside the plurality of magnetic resistance sensors and overlapped with the plurality of magnetic resistance sensors;
a plurality of magnetization direction setting elements disposed beside and overlapping the plurality of magnetoresistive sensors; and
a current generator, wherein,
the current generator is used for selectively applying a first current to the detection magnetic field generating element so that the detection magnetic field generating element generates a reference magnetic field for the plurality of magnetic resistance sensors, wherein the magnetic field direction of the reference magnetic field is parallel to the first short axis of each magnetic resistance sensor,
and the current generator is used for selectively applying a second current to enable the plurality of magnetization direction setting elements to generate a plurality of setting magnetic fields for the plurality of magnetic resistance sensors, wherein the magnetic field direction of each setting magnetic field is parallel to the first long axis of each magnetic resistance sensor.
2. The magnetic field sensing device of claim 1, wherein,
the detection magnetic field generating element includes a plurality of conductors, and the plurality of conductors are arranged in parallel with each other,
wherein each of the conductors further includes a second major axis and a second minor axis that are perpendicular to each other, and the second major axis is parallel to the first major axis of the magnetoresistive sensor.
3. The magnetic field sensing device of claim 1, wherein,
the detection magnetic field generating element comprises a plurality of conductor groups, each conductor group further comprises a plurality of conductors which are arranged in parallel, each conductor further comprises a second long axis and a second short axis which are perpendicular to each other, the second long axis is parallel to the first long axis of the magnetic resistance sensor, and the plurality of conductor groups are arranged in series.
4. The magnetic field sensing device of claim 3, wherein,
in each of the conductor sets, an orthographic projection range is defined and covers all conductors within the corresponding conductor set,
wherein the plurality of orthographic projection ranges do not overlap each other.
5. The magnetic field sensing device of claim 3, wherein,
in each conductor set, a forward projection range is defined and covers all conductors of the corresponding conductor set,
the plurality of orthographic projection ranges are overlapped in pairs.
6. The magnetic field sensing device of claim 3, wherein,
the plurality of conductor sets comprises at least one first conductor set and at least one second conductor set, the plurality of conductors in the first conductor set are a plurality of first conductors, the plurality of conductors in the second conductor set are a plurality of first conductors,
wherein the plurality of first conductors and the plurality of second conductors are disposed to intersect each other.
7. The magnetic field sensing device of claim 6, wherein the plurality of conductor sets includes a single first conductor set and a single second conductor set.
8. The magnetic field sensing device of claim 6, wherein the plurality of conductor sets includes a plurality of first conductor sets and a plurality of second conductor sets.
9. The magnetic field sensing device of claim 1, wherein,
each of the magnetization direction setting elements has a third major axis and a third minor axis perpendicular to each other, wherein the third major axis is perpendicular to the first major axis of the magnetoresistive sensor,
the plurality of magneto-resistive sensors further comprises a plurality of first magneto-resistive sensors arranged in parallel and a plurality of second magneto-resistive sensors arranged in parallel, wherein each of the first magneto-resistive sensors is arranged in series with the corresponding second magneto-resistive sensor,
the plurality of magnetization direction setting elements further includes a first magnetization direction setting element and a second magnetization direction setting element,
wherein the first magnetization direction setting element is disposed to overlap the plurality of first magneto-resistive sensors, and the second magnetization direction setting element is disposed to overlap the plurality of second magneto-resistive sensors.
10. The magnetic field sensing device according to claim 1, wherein the plurality of magnetization direction setting elements are disposed between the plurality of magnetoresistive sensors and the detection magnetic field generating element.
11. The magnetic field sensing device of claim 1, further comprising a first insulating layer and a second insulating layer,
the first insulating layer is located between the plurality of magnetoresistive sensors and the plurality of magnetization direction setting elements,
and the second insulating layer is located between the plurality of magnetization direction setting elements and the detection magnetic field generating element.
12. The magnetic field sensing device of claim 1, wherein the type of magnetoresistive sensor is an out-of-phase magnetoresistive sensor.
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