CN112051523B - Magnetic field sensing device - Google Patents

Abstract

The invention provides a magnetic field sensing device, which comprises a plurality of magnetic resistance sensors, a detection magnetic field generating element, a plurality of magnetization direction setting elements and a current generator. Each magnetoresistive sensor has a major axis and a minor axis that are perpendicular to each other. The current generator is used for selectively applying a first current to the detection magnetic field generating element so that the detection magnetic field generating element generates a reference magnetic field for the magnetic resistance sensors. The magnetic field direction of the reference magnetic field is parallel to the short axis. The current generator is used for selectively applying a second current to enable the magnetization direction setting elements to generate a plurality of setting magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the long axis.

Description

Magnetic field sensing device

technical field

The invention relates to a magnetic field sensing device, in particular to a magnetic field sensing device with a self-built detection magnetic field generating element.

Background technique

With the development of science and technology, electronic products with navigation and positioning functions are becoming more and more diverse. Electronic compasses provide functions equivalent to traditional compasses in the fields of car navigation, aviation and personal handheld devices. In order to realize the function of the electronic compass, the magnetic field sensing device becomes a necessary electronic component.

When the magnetic field sensing device is completed, it is usually sent to the inspection system for calibration. However, in order to generate a large-scale detection magnetic field to detect multiple magnetic field devices at one time, the detection system requires a large volume and requires a large current. In addition, a large amount of shipping and testing time is required in the testing process, which increases the production cost and production time of the magnetic field sensing device.

Contents of the invention

The invention provides a magnetic field sensing device with self-detection function and lower production cost.

An embodiment of the present invention provides a magnetic field sensing device, including a plurality of magnetoresistive sensors, detection magnetic field generating elements, a plurality of magnetization direction setting elements, and a current generator. Each magnetoresistive sensor has a first long axis and a first short axis perpendicular to each other. The detecting magnetic field generating element is arranged beside and overlapped with the magnetoresistive sensors. The magnetization direction setting elements are arranged beside the magnetoresistive sensors and overlapped with the magnetoresistive sensors. The current generator is used for selectively applying the first current to the detecting magnetic field generating element, so that the detecting magnetic field generating element generates a reference magnetic field for the magnetoresistive sensors. The current generator is used for selectively applying a second current to make the magnetization direction setting elements generate a plurality of set magnetic fields for the magnetoresistive sensors. The magnetic field direction of each set magnetic field is parallel to the first long axis of each magnetoresistive sensor.

In an embodiment of the present invention, the above detection magnetic field generating element includes a plurality of conductors, and the plurality of conductors are arranged in parallel with each other. Each conductor also includes a second long axis and a second short axis perpendicular to each other, and the second long axis is parallel to the first long axis of the magnetoresistive sensor.

In an embodiment of the present invention, the detection magnetic field generating element includes a plurality of conductor groups. Each conductor set also includes a plurality of conductors arranged in parallel with each other. Each conductor also includes a second long axis and a second short axis perpendicular to each other, and the second long axis is parallel to the first long axis of the magnetoresistive sensor. These conductor sets are arranged in series with each other.

In an embodiment of the present invention, in each conductor group, an orthographic projection range is defined and the orthographic projection range covers all conductors in the corresponding conductor group. These orthographic extents do not overlap each other.

In an embodiment of the present invention, in each conductor set, an orthographic projection range is defined and the orthographic projection range covers all conductors of the corresponding conductor set. These orthographic projection ranges overlap each other.

In an embodiment of the present invention, the plurality of conductor sets mentioned above include at least one first conductor set and at least one second conductor set. The plurality of conductors in the first conductor set is a plurality of first conductors. The plurality of conductors in the second conductor set is a plurality of first conductors. The first conductors and the second conductors are arranged to cross each other.

In an embodiment of the present invention, the aforementioned conductor sets include a single first conductor set and a single second conductor set.

In an embodiment of the present invention, the aforementioned conductor sets include a plurality of first conductor sets and a plurality of second conductor sets.

In an embodiment of the present invention, each of the above-mentioned magnetization direction setting elements has a third long axis and a third short axis perpendicular to each other. The third long axis is perpendicular to the first long axis of the magnetoresistive sensor. These magnetoresistive sensors also include a plurality of first magnetoresistive sensors arranged in parallel and a plurality of second magnetoresistive sensors arranged in parallel. Each first magnetoresistive sensor is arranged in series with the corresponding second magnetoresistive sensor. The magnetization direction setting elements further include a first magnetization direction setting element and a second magnetization direction setting element. The first magnetization direction setting element is overlapped with the first magnetoresistive sensors, and the second magnetization direction setting element is overlapped with the second magnetoresistive sensors.

In an embodiment of the present invention, the magnetization direction setting elements mentioned above are disposed between the magnetoresistive sensors and the detecting magnetic field generating elements.

In an embodiment of the present invention, the above-mentioned magnetic field sensing device further includes a first insulating layer and a second insulating layer. The first insulating layer is located between the magnetoresistive sensors and the magnetization direction setting elements. The second insulating layer is located between these magnetization direction setting elements and the detection magnetic field generating elements.

In an embodiment of the present invention, the above-mentioned magnetoresistive sensor is an out-of-phase magnetoresistive sensor.

Based on the above, in the magnetic field sensing device of the embodiment of the present invention, it generates a reference magnetic field for the magnetoresistive sensor by detecting the magnetic field generating element, and this reference magnetic field can be used to correct the sensitivity and orthogonality of the magnetoresistive sensor, so the magnetic field sensing The device can realize self-test function.

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail with reference to the accompanying drawings.

Description of drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain principles of the invention.

FIG. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the present invention.

Fig. 2 is a schematic cross-sectional view of section A-A' in Fig. 1 .

3A and 3B are different layout methods of the anisotropic magnetoresistive sensor in FIG. 1 .

FIG. 4 to FIG. 6 show schematic diagrams of circuit layouts of detection magnetic field setting elements according to different embodiments of the present invention.

Explanation of reference numbers

100: a magnetic field sensing device;

110: magnetoresistive sensor, anisotropic magnetoresistive sensor;

112: the first magnetoresistive sensor;

114: the second magnetoresistive sensor;

120, 120a-120c: detecting magnetic field generating elements;

130: magnetization direction setting element;

132: a first magnetization direction setting element;

134: a second magnetization direction setting element;

140: current generator;

150, 160: insulating layer;

A-A': profile;

C: conductor;

C1: first conductor;

C2: second conductor;

CS: conductor set;

CS1, CS1b, CS1c: first conductor set;

CS2, CS2b, CS2c: second conductor set;

D: extension direction;

D1～D3: direction;

FF: ferromagnetic film;

H: external magnetic field;

H _M : set the magnetic field;

H _R : reference magnetic field;

M: magnetization direction;

PR, PR1, PR2, PR1b, PR2b: orthographic projection range;

SB: short circuit bar;

SD: sensing direction;

I: current;

I ₁ : first current;

I ₁ /2: half of the first current;

I ₂ : second current.

Detailed ways

Reference will now be made in detail to the exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used in the drawings and description to refer to the same or like parts.

In order to facilitate the description of the configuration of the magnetic field sensing device in the embodiment of the present invention, the magnetic field sensing device can be regarded as being in a space formed by the direction D1, the direction D2 and the direction D3, wherein the directions D1, D2, and D3 are in pairs perpendicular to each other.

FIG. 1 is a schematic top view of a magnetic field sensing device according to an embodiment of the present invention. Fig. 2 is a schematic cross-sectional view of section A-A' in Fig. 1 . 3A and 3B are different layout methods of the anisotropic magnetoresistive sensor in FIG. 1 .

1 and 2, in this embodiment, the magnetic field sensing device 100 includes a plurality of magnetoresistive sensors 110, a detection magnetic field generating element 120, a plurality of magnetization direction setting elements 130, a current generator 140 and a plurality of insulation Layers 150, 160. The above elements will be described in detail in the following paragraphs.

The magnetoresistive sensor 110 referred to in the embodiment of the present invention refers to a sensor whose resistance can be changed correspondingly by changing an external magnetic field. The magnetoresistive sensor 110 may be an anisotropic Magneto-Resistive resistor (AMR resistor). Each magnetoresistive sensor 110 has a first long axis and a first short axis perpendicular to each other, wherein the first long axis (not marked) and the first short axis (not marked) are, for example, parallel to the directions D1 and D2 respectively. Referring to FIG. 3A and FIG. 3B, the anisotropic magnetoresistive sensor 110 has, for example, a barber pole-like structure, that is, its surface is provided with a 45-degree extension relative to the extension direction D of the anisotropic magnetoresistive sensor 110. A plurality of electrical shorting bars (electrical shorting bars) SB, these shorting bars SB are arranged on the ferromagnetic film (ferromagnetic film) FF at intervals and in parallel, and the ferromagnetic film FF is the main body of the anisotropic magnetoresistive sensor 110, The extending direction thereof is the extending direction of the anisotropic magnetoresistive sensor 110 . The sensing direction SD of the anisotropic magnetoresistive sensor 110 is perpendicular to the extending direction D. As shown in FIG. In addition, opposite ends of the ferromagnetic film FF may be tapered.

In an embodiment of the present invention, the detection magnetic field generating element 120 and the magnetization direction setting element 130 are any one of coils, wires, metal sheets, conductors or a combination thereof that can generate a magnetic field through energization. The detection magnetic field generating element 120 is, for example, a detection magnetic field generating coil. In this embodiment, the detecting magnetic field generating element 120 includes a plurality of conductors C arranged in parallel, for example two, but not limited thereto. Each conductor C has a second long axis (not marked) and a second short axis (not marked) perpendicular to each other, wherein the second long axis and the second short axis are parallel to the directions D1 and D2 respectively. On the other hand, the magnetization direction setting elements 130 are, for example, metal conductor plates, and the number thereof is, for example, two. The two magnetization direction setting elements 130 are called first and second magnetization direction setting elements 132 , 134 respectively. Each magnetization direction setting element has a third long axis (not marked) and a third short axis (not marked) perpendicular to each other, wherein the third long axis and the third short axis are parallel to the directions D2 and D1 respectively.

The above-mentioned "major axis" is defined as a reference axis parallel to the long side of the component and passing through the center point of the component, while the above-mentioned "short axis" is defined as another reference axis parallel to the short side of the component and passing through the center point of the component .

In the embodiment of the present invention, the current generator 140 refers to an electronic component for providing current.

In the embodiment of the present invention, the material of the insulating layers 150 and 160 is, for example, silicon dioxide, aluminum oxide, aluminum nitride, silicon nitride or other materials with insulating function, and the present invention is not limited thereto.

In order to illustrate the configuration effect of the magnetic field sensing device 100 of the present embodiment, the basic principle of the magnetic field sensing device 100 of the present embodiment to measure the magnetic field will be briefly introduced in the following paragraphs.

Before the anisotropic magnetoresistive sensor 110 starts to measure the external magnetic field H, its magnetization direction can be set by the magnetization direction setting element 130 first. In FIG. 3A , the magnetization direction setting element 130 can generate a magnetic field along the extension direction D (or the long axis direction) by electrification, so that the anisotropic magnetoresistive sensor 110 has a magnetization direction M.

Next, the magnetization direction setting element 130 is de-energized, so that the anisotropic magnetoresistive sensor 110 starts to measure the external magnetic field H. Referring to FIG. When there is no external magnetic field H, the magnetization direction M of the anisotropic magnetoresistive sensor 110 is maintained in the extension direction D, at this time the current generator 140 can apply a current I to make the current I flow from the anisotropic magnetoresistive sensor 110 When the left end flows to the right end, the flow direction of the current I near the short bar SB will be perpendicular to the extension direction of the short bar SB, so that the current I flow near the short bar SB is 45 degrees from the magnetization direction M. At this time, the anisotropic reluctance The resistance value of the sensor 110 is R.

When an external magnetic field H is oriented in a direction perpendicular to the extension direction D, the magnetization direction M of the anisotropic magnetoresistive sensor 110 will deflect in the direction of the external magnetic field H, so that the magnetization direction and the current I flow near the short-circuit bar are clamped. When the angle is greater than 45 degrees, the resistance value of the anisotropic magnetoresistive sensor 110 changes by -ΔR at this time, that is, it becomes R-ΔR, that is, the resistance value becomes smaller, wherein ΔR is greater than 0.

However, as shown in FIG. 3B, when the extending direction of the shorting bar SB in FIG. and the extension direction D of the anisotropic magnetoresistive sensor 110 at 45 degrees), and when there is an external magnetic field H, the magnetic field H will still deflect the magnetization direction M to the direction of the external magnetic field H. At this time, the magnetization direction M and The included angle of the current I near the shorting bar SB is less than 45 degrees, so the resistance of the anisotropic magnetoresistive sensor 110 becomes R+ΔR, that is, the resistance of the anisotropic magnetoresistive sensor 110 becomes larger.

In addition, when the magnetization direction M of the anisotropic magnetoresistive sensor 110 is set to the reverse direction shown in FIG. 3A by the magnetization direction setting element 130, the anisotropic magnetoresistive sensor 110 of FIG. The resistance value of will become R+ΔR. Furthermore, when the magnetization direction M of the anisotropic magnetoresistive sensor 110 is set to the reverse direction shown in FIG. 3B by the magnetization direction setting element 130, the anisotropic magnetoresistive sensor in FIG. A resistor value of 110 would become R-ΔR.

Therefore, in this embodiment, the magnetic field sensing device 100, for example, forms a Wheatstone bridge through four magnetoresistive sensors 110. Those skilled in the art can combine these magnetoresistive sensors 110 with the above or other Different circuit designs and the change of the resistance value of the magnetoresistive sensor 110 due to the external magnetic field are used to correspond to the measured signal of the magnetic field component of the external magnetic field H in a specific direction. In other unshown embodiments, the magnetic field sensing device includes, for example, more than four magnetoresistive sensors 110 to form multiple Wheatstone full bridges or half bridges, so as to correspond to the measured external magnetic field H at different specific levels. The signal of the magnetic field component in the direction . Or, in some other embodiments, the magnetic field sensing device includes, for example, one to three magnetoresistive sensors 110. A response signal generated by the change, and the change of the magnetic field is known. The present invention is not limited by the number of magnetoresistive sensors 120 and their circuit design.

In the following paragraphs, the arrangement of each element and the corresponding effects in the magnetic field sensing device 100 of the present embodiment will be described in detail.

Referring to FIG. 1 and FIG. 2 , in this embodiment, the detection magnetic field generating element 120 is disposed beside the magnetoresistive sensors 110 and overlapped with the magnetoresistive sensors 110 . In detail, the first long axis and the first short axis of each magnetoresistive sensor 110 are respectively arranged in parallel with the second long axis and the second short axis of the corresponding conductor C in the detection magnetic field generating element 120, and each magnetoresistive sensor 110 falls within the range of the orthographic projection of the corresponding conductor C. The current generator 140 can selectively apply the first current I ₁ to the detecting magnetic field generating element 120 , so that the conductors C generate a reference magnetic field _HR in the direction D2 to the magnetoresistive sensors 110 . That is to say, the magnetic field direction of the reference magnetic field _HR is parallel to the first short axis of the magnetoresistive sensor 110 . The magnetic field direction of the reference magnetic field _HR is the same as the sensing direction of each magnetoresistive sensor 110 , and is used to correct the sensitivity (Sensitivity) and orthogonality (Orthogonality) of each magnetoresistive sensor 110 .

The magnetization direction setting elements 130 are disposed beside the magnetoresistive sensors 110 , and each magnetization direction setting element 130 is overlapped with the corresponding magnetoresistive sensors 110 and detection magnetic field generating elements 120 at the same time. In detail, the third long axis and the third short axis of each magnetization direction setting element 130 are respectively connected with the first short axis (or second short axis) and the first long axis ( or the second major axis) parallel to each other. Moreover, according to the above paragraphs, before the magnetic field sensing device 100 measures the magnetic field, it is necessary to set the magnetization directions of the magnetoresistive sensors 110 . The magnetoresistive sensors 110 can be divided into a plurality of first magnetoresistive sensors 112 and a plurality of second magnetoresistive sensors 114 . These first and second magnetoresistive sensors 112 and 114 are arranged overlapping with the first and second magnetization direction setting elements 132 and 134 respectively. Each first magnetoresistive sensor 112 is arranged in series with the corresponding second magnetoresistive sensor 114 , and is coupled to form a bridge arm of a Wheatstone bridge.

When the current generator 140 applies the second current _I to the first and second magnetization direction setting elements 132 and 134, the first and second magnetization direction setting elements 132 and 134 generate magnetic field directions for these magnetoresistive sensors 110 as A plurality of set magnetic fields H _M in the direction D1 or its opposite direction. That is to say, the magnetic field directions of these set magnetic fields H _M are parallel to the first long axis of each magnetoresistive sensor 110 . Since these magnetization direction setting elements 132, 134 are arranged in the form of an S-shaped circuit loop, the current flow direction of the second current _I2 in the first and second magnetization direction setting elements 132, 134 is antiparallel to each other (Anti- parallel), these set magnetic fields H _M are also antiparallel to each other. Therefore, the first magnetization direction setting element 132 can set the magnetization direction of the first magnetoresistive sensors 112 to the direction D1, and the second magnetization direction setting element 134 can set the magnetization direction of the second magnetoresistive sensors 114 to the direction D1. Set as the opposite direction of direction D1.

Referring to FIG. 2 , in this embodiment, the insulating layer 150 is located between the magnetoresistive sensors 110 and the magnetization direction setting elements 130 , and the insulating layer 150 covers the magnetization direction setting elements 130 . The insulating layer 160 is located between these magnetization direction setting elements 130 and the detection magnetic field generating element 120 .

Based on the above, in the magnetic field sensing device 100 of the present embodiment, the detection magnetic field generating element 120 is disposed beside the magnetoresistive sensors 110 and overlapped with the magnetoresistive sensors 110 . The detection magnetic field generating element 120 can be applied by the current generator 140 to the first current _I1 to generate a reference magnetic field _HR parallel to the short axis direction of the magnetoresistive sensor 110 for these magnetoresistive sensors, and this reference magnetic field _HR can be used for The sensitivity and orthogonality of these magnetoresistive sensors 110 are calibrated, so that the magnetic field sensing device 100 can realize the self-detection function. And, because the detection magnetic field generating element 120 is arranged beside these magnetoresistive sensors 110, the distance between the two is quite close, the current required for the detection magnetic field generating element 120 does not need to be too large to generate a reference magnetic field _HR of sufficient strength , that is, it does not need to consume much energy during the detection process.

At the same time, the magnetic field sensing device 100 is suitable for detection by a standard probing system. Since the standard probing system has high yield and short detection time, the overall production cost and production time of the magnetic field sensing device 100 can be reduced. .

It must be noted here that the following embodiments continue to use part of the content of the previous embodiments, omitting the description of the same technical content. For the same component names, reference can be made to part of the content of the previous embodiments, and the following embodiments will not be repeated.

FIG. 4 to FIG. 6 show schematic diagrams of circuit layouts of detection magnetic field setting elements according to different embodiments of the present invention.

Please refer to FIG. 4 , the detection magnetic field setting element 120 a in FIG. 4 is similar to the detection magnetic field setting element 120 in FIG. 1 , the main difference is that the detection magnetic field setting element 120 a includes a plurality of conductor sets CS. Each conductor set CS includes conductors C arranged in parallel with each other. These conductor sets CS are then arranged in series with each other. In this embodiment, the number of conductor sets is, for example, two, which are respectively called first and second conductor sets CS1 and CS2, and the conductors C in the first and second conductor sets CS1 and CS2 are respectively called first and second conductor sets CS1 and CS2 respectively. Second conductors C1, C2. The number of conductors C in the first and second conductor sets CS1 and CS2 are respectively four, but the present invention is not limited to the number of conductor sets and conductors. In addition, in this embodiment, each conductor set CS can define an orthographic projection range PR, wherein the orthographic projection range PR is defined, for example, in the direction D3, covering the orthographic projection ranges of the corresponding plurality of conductors C in the conductor set CS . For example, the orthographic projection range PR1 covers all the first conductors C1 in the first conductor set CS1 , and the orthographic projection range PR2 covers all the second conductors C2 in the second conductor set CS2 . In this embodiment, these orthographic projection ranges PR do not overlap with each other.

Please refer to FIG. 5, the detection magnetic field setting element 120b of FIG. 5 is similar to the detection magnetic field setting element 120a of FIG. . Specifically, the plurality of conductor sets CS includes, for example, a single first conductor set CS1b (two first conductors C1 indicated by a solid line) and a single second conductor set CS2b (two second conductors C2 indicated by a dotted line). ). For clarity, the wires directly connected to the first conductor set CS1b and themselves are shown in solid lines, while the wires directly connected to the second conductor set CS2b and themselves are shown in dashed lines. The first and second orthographic projection ranges PR1b and PR2b respectively defined by the first and second conductor sets CS1b and CS2b overlap each other. In this embodiment, the first and second conductor sets CS1b and CS2b respectively have two first and second conductors C1 and C2, but the present invention is not limited thereto. In addition, in other unshown embodiments, the detection magnetic field setting element may further have a third conductor group, and the third orthographic projection range defined by it overlaps with the second orthographic projection range, for example.

Please refer to FIG. 5 again. From another point of view, the first and second conductors C1 and C2 of the first and second conductor sets CS1b and CS2b respectively are intersected with each other to form an interdigitated arrangement. Specifically, a second conductor C2 is sandwiched between any two adjacent first conductors C1 , and a first conductor C1 is sandwiched between any two adjacent second conductors C2 .

Please refer to FIG. 6, the detection magnetic field setting element 120c of FIG. 6 is similar to the detection magnetic field setting element 120b of FIG. The number of conductor sets CS2c is also multiple (for example, three). For clarity, the wires directly connected to the first conductor set CS1c and themselves are shown in solid lines, while the wires directly connected to the second conductor set CS2c and themselves are shown in dashed lines. In this embodiment, the first conductor sets CS1c are connected in series first, and then connected in series with the second conductor sets CS2c.

To sum up, in the magnetic field sensing device of the embodiment of the present invention, the detection magnetic field generating element is arranged beside and overlapped with a plurality of magnetoresistive sensors. The detection magnetic field generating element can be applied with the first current by the current generator to generate a reference magnetic field parallel to the short axis direction of the magnetoresistive sensors for these magnetoresistive sensors, and this reference magnetic field can be used to calibrate the sensitivity and sensitivity of these magnetoresistive sensors Orthogonality, so the magnetic field sensing device can realize self-detection function. And, because the detection magnetic field generating element is arranged beside these magnetoresistive sensors, so the distance between the two is quite close, the current size required for the detection magnetic field generating element does not need to be too large to generate a reference magnetic field of sufficient strength, and its detection The energy consumption of the process is low.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than limiting them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that: It is still possible to modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some or all of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the technical solutions of the various embodiments of the present invention. scope.

Claims (12)

1. A magnetic field sensing device, characterized in that, comprising: a plurality of magnetoresistive sensors, each of which has a first long axis and a first short axis perpendicular to each other; The detection magnetic field generating element is arranged beside the plurality of magnetoresistive sensors and overlapped with the plurality of magnetoresistive sensors; a plurality of magnetization direction setting elements arranged beside the plurality of magnetoresistive sensors and overlapped with the plurality of magnetoresistive sensors; and current generator, where, The current generator is used to selectively apply a first current to the detection magnetic field generating element, so that the detection magnetic field generating element generates a reference magnetic field for the plurality of magnetoresistive sensors, wherein the magnetic field direction of the reference magnetic field is parallel on the first minor axis of each of the magnetoresistive sensors, And the current generator is used to selectively apply a second current so that the multiple magnetization direction setting elements generate multiple set magnetic fields for the multiple magnetoresistive sensors, wherein the magnetic field direction of each set magnetic field parallel to the first long axis of each magnetoresistive sensor. 2. The magnetic field sensing device according to claim 1, wherein, The detection magnetic field generating element includes a plurality of conductors, and the plurality of conductors are arranged in parallel with each other, Each of the conductors further includes a second long axis and a second short axis perpendicular to each other, and the second long axis is parallel to the first long axis of the magnetoresistive sensor. 3. The magnetic field sensing device according to claim 1, wherein, The detection magnetic field generating element includes a plurality of conductor groups, and each of the conductor groups also includes a plurality of conductors arranged in parallel with each other, and each of the conductors also includes a second long axis and a second short axis perpendicular to each other, and The second long axis is parallel to the first long axis of the magnetoresistive sensor, wherein the plurality of conductor sets are arranged in series with each other. 4. The magnetic field sensing device according to claim 3, wherein, In each of said conductor sets, an orthographic projection range is defined and said orthographic projection range covers all conductors in the corresponding conductor set, Wherein, the multiple orthographic projection ranges do not overlap with each other. 5. The magnetic field sensing device according to claim 3, wherein, In each of the conductor groups, an orthographic projection range is defined and the orthographic projection range covers all conductors of the corresponding conductor group, Wherein, the plurality of orthographic projection ranges overlap each other. 6. The magnetic field sensing device according to claim 3, wherein, The plurality of conductor groups includes at least one first conductor group and at least one second conductor group, the plurality of conductors in the first conductor group are a plurality of first conductors, and all the conductors in the second conductor group The plurality of conductors is a plurality of first conductors, Wherein, the plurality of first conductors and the plurality of second conductors are arranged to cross each other. 7 . The magnetic field sensing device according to claim 6 , wherein the plurality of conductor sets comprise a single first conductor set and a single second conductor set. 8. The magnetic field sensing device according to claim 6, wherein the plurality of conductor groups comprises a plurality of first conductor groups and a plurality of second conductor groups. 9. The magnetic field sensing device according to claim 1, wherein, Each of the magnetization direction setting elements has a third long axis and a third short axis perpendicular to each other, wherein the third long axis is perpendicular to the first long axis of the magnetoresistive sensor, The plurality of magnetoresistive sensors also includes a plurality of first magnetoresistive sensors arranged in parallel and a plurality of second magnetoresistive sensors arranged in parallel, wherein each of the first magnetoresistive sensors and the corresponding second magnetoresistive sensor series setup, The plurality of magnetization direction setting elements further include a first magnetization direction setting element and a second magnetization direction setting element, Wherein the first magnetization direction setting element is overlapped with a plurality of the first magnetoresistive sensors, and the second magnetization direction setting element is overlapped with a plurality of the second magnetoresistive sensors. 10 . The magnetic field sensing device according to claim 1 , wherein the plurality of magnetization direction setting elements are disposed between the plurality of magnetoresistive sensors and the detecting magnetic field generating element. 11 . 11. The magnetic field sensing device according to claim 1, further comprising a first insulating layer and a second insulating layer, the first insulating layer is located between the plurality of magnetoresistive sensors and the plurality of magnetization direction setting elements, And the second insulating layer is located between the plurality of magnetization direction setting elements and the detecting magnetic field generating element. 12 . The magnetic field sensing device according to claim 1 , wherein the type of the magnetoresistive sensor is an out-of-phase magnetoresistive sensor. 13 .

Images