CN112051036A - Method and device for testing optical catastrophe damage peak power of cavity surface of semiconductor laser - Google Patents
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Abstract
The invention provides a method and a device for testing optical catastrophe damage peak power of a cavity surface of a semiconductor laser, which can accurately and objectively obtain drive current and peak power of COMD so as to guide a using method of a high-peak power semiconductor laser. Aiming at a high-peak power semiconductor laser array device, at different feedback positions in the horizontal and/or vertical direction, a reflector is actively arranged under a test environment to simulate feedback light under an actual working environment, and the driving current and the peak power of generated COMD are tested; in addition, the reflectivity of the mirror (reflectivity 1% -10%) was also adjusted to simulate different feedback intensities. The invention can more accurately and objectively obtain the driving current and the peak power of the generated COMD, and the method is simple, convenient and reliable, so as to guide the use method of the high-power semiconductor laser, thereby greatly improving the service life and the reliability of the laser product; the device has simple structure, stable and accurate work and convenient realization.
Description
Technical Field
The invention relates to a method and a device for testing parameters related to optical catastrophic damage of a cavity surface of a semiconductor laser.
Background
The semiconductor laser array is used as a power device of a multi-luminous-spot, the output power is high, and the optical catastrophic damage (COMD) of the cavity surface is the biggest technical bottleneck restricting the power and the service life of the semiconductor laser array. In the practical use process, the retroreflection with different intensities causes cavity surface burnout, power reduction and service life shortening, and the main reasons are that the local part of the cavity surface bears large optical power density, so that the temperature of the area is increased, vicious circle occurs, the COMD burnout occurs to the device, and the service life and reliability are greatly reduced.
At present, the peak power of a device is mainly tested by a power meter in the optical catastrophic damage test of the cavity surface of a semiconductor laser, for example, the common test modes are as follows: the duty ratio is 0.1%, the pulse width is 100 mus, the repetition frequency is 10Hz, the driving current is increased until the peak power of the device is obviously reduced, and therefore the peak power which causes optical catastrophe damage to the cavity surface of the semiconductor laser is obtained. The principle is as follows: after the optical catastrophic damage of the cavity surface occurs, the cavity surface film of the laser is burnt out, and the sufficient reflectivity cannot be provided, so that the power of the device is reduced.
The existing test method is to test the peak power of the cavity surface optical catastrophic damage (COMD) only by increasing the driving current under an ideal test environment, does not consider the condition of external feedback light, and does not recognize the position characteristics of the cavity surface burnt by the COMD. The applicant notices that in the actual use process of the semiconductor laser, the situation that optical catastrophic damage occurs to the cavity surface of the device at the early stage due to external feedback light is very many, and the external feedback light is a main factor causing the cavity surface of the device to be burnt.
Disclosure of Invention
The invention aims to provide a method and a device for testing optical catastrophe damage peak power of a cavity surface of a semiconductor laser, which can accurately and objectively obtain driving current and peak power of COMD so as to guide a using method of a high-peak power semiconductor laser.
The technical scheme of the invention is as follows:
in a first aspect, a method for testing optical catastrophic damage peak power of a cavity surface of a semiconductor laser drives a semiconductor laser array to be tested through a high-current pulse power supply (more than 1000A), and simultaneously, the COMD peak power of the laser is measured on line through a power meter arranged on an emergent light path of the semiconductor laser array to be tested, the method comprises the following steps:
1) the pulse power supply drives the semiconductor laser array to be tested with a set initial current, and a reflector is arranged in a peripheral divergent area at a set distance on an emergent light path of the semiconductor laser array to be tested, so that part of divergent light of the semiconductor laser array to be tested is fed back to a cavity surface of the laser through the reflector; the initial current satisfies that the COMD burning of the semiconductor laser array to be tested does not occur no matter where the reflector is arranged; then, quantitatively increasing the driving current of the semiconductor laser array to be detected;
2) keeping the fixed position of the reflector for a set time length, and judging whether the laser power measured on line by the power meter is suddenly reduced or not; the critical power (peak power) at which COMD burnout occurs is typically more than 2 times the rated output power of the laser, until which the output power of the laser continues to increase;
if yes, judging that COMD burning occurs, and determining the cavity surface position of the semiconductor laser array to be tested, wherein COMD burning occurs, according to the current position and angle information of the reflector; then replacing another semiconductor laser array to be tested in the same batch, and executing the step 3);
if not, determining that COMD burning does not occur, and continuing to execute the step 3);
3) moving a reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, and adjusting the angle if necessary to ensure that part of divergent light of the semiconductor laser array to be detected is fed back to the cavity surface of the laser through the reflector; step 2) is executed again;
4) performing step 3) multiple times, thereby traversing multiple different feedback locations;
if at least one feedback position is burnt out by the COMD, recording the peak power and the driving current at the moment and the position of the cavity surface where the COMD is burnt out, and ending the test;
and if the COMD is not burnt, continuing to quantitatively increase the driving current of the semiconductor laser array to be tested, and executing the steps 2) to 4) again.
Further, the value of the initial current may be an empirical value directly, or may be determined according to the following steps:
a) loading corresponding driving current according to 1.5-2 times of rated power;
b) keeping the fixed position of the reflector for a set time length, and judging whether the laser power measured on line by the power meter is obviously reduced or not;
if yes, judging that COMD burning occurs, taking another semiconductor laser array to be tested in the same batch for retesting, and reducing the driving current; then re-executing step b);
if not, determining that optical catastrophe damage does not occur, and executing the step c);
c) moving a reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, and adjusting the angle to enable part of divergent light of the semiconductor laser array to be detected to be fed back to the cavity surface of the laser through the reflector; step b) is executed again;
d) and c), executing the step c) for multiple times, so that when the situation that COMD burning does not occur under the current power condition is met, the current driving current is determined to be the initial current.
Further, in the step 2), the fixed position of the reflecting mirror is kept for a set time period of 5-10 minutes.
Further, the step 3) may be to move the mirror along a spherical surface centered on the semiconductor laser array to be measured at the set distance, specifically: enabling the reflector to move along an arc in the vertical direction at a set step length relative to the semiconductor laser array to be detected, and then moving along the arc in the horizontal direction at the set step length; alternatively, two mirrors are provided, which move along circular arcs in the vertical and horizontal directions, respectively, in set steps.
Further, while keeping the drive current constant, the reflectivity of the mirror is also changed, again traversing a plurality of different feedback positions.
Furthermore, the change of the reflectivity of the reflector is realized by replacing different reflectors or arranging reflecting films with different reflectivities on the surface of the reflector; the adjusting range of the reflectivity is 1% -10%.
In the second aspect, a method for using a high-power semiconductor laser is used for inhibiting or eliminating feedback light factors of corresponding positions and angles in the environment aiming at the cavity surface position where COMD burns out determined in the testing method before or during operation; and ensures that the high power semiconductor laser operates below said peak power.
In a third aspect, a device for testing the optical catastrophe damage peak power of a cavity surface of a semiconductor laser comprises a driving power supply and a power meter, wherein the power meter is arranged on an emergent light path of a semiconductor laser array to be tested; the laser energy meter is characterized by further comprising a controller, at least one group of reflectors and a driving and adjusting assembly of the reflectors, wherein the driving and adjusting assembly is used for driving the reflectors to move in an arc manner by taking the semiconductor laser array to be measured as a circle center, and enabling laser fed back by the reflectors to be reflected to the cavity surfaces of the lasers (so that light intensity at local positions of the laser cavity surfaces is enhanced in an overlapping manner, higher light power density is generated at the cavity surfaces, and optical catastrophic damage and burnout of the cavity surfaces are induced to be generated); the controller is used for collecting the driving current of the semiconductor laser array to be tested and the output power measured by the power meter, and the testing method is realized by controlling the driving power supply and the driving adjusting assembly (the processor in the controller loads and runs a program on the memory so as to realize the testing method).
Furthermore, the reflector is spatially located between the semiconductor laser array to be detected and the detection surface of the power meter, and the detection surface of the power meter is avoided by the arc moving position.
Furthermore, the testing device also comprises a positioning platform used for fixedly mounting the semiconductor laser array to be tested, and the fixed position of the semiconductor laser array to be tested on the positioning platform is adjustable (such as vertical placement and horizontal placement); the driving adjusting assembly comprises a swing arm, an adapter and a stepping motor, the swing arm is arranged below the positioning platform and is parallel to an installation plane of the semiconductor laser array to be detected on the positioning platform, the fixed end of the swing arm is driven by the stepping motor to rotate, and a rotating shaft is coaxial with the center of the semiconductor laser array to be detected and is vertical to the installation plane; the reflector is mounted at the free end of the swing arm through the adapter, so that the reflector and the center of the semiconductor laser array to be tested are located at the same height.
The horizontal direction and the vertical direction are relative concepts, and are not limited to absolute orientation in space, which is intended to facilitate the expression that the reflecting mirror moves in different directions (typically designed as orthogonal directions) to form feedback light from different directions, so as to simulate the actual operating environment of the product.
The adapter can adopt a rotating shaft, so that the deflection of the reflector can be conveniently adjusted according to the requirement. Of course, if the semiconductor laser array to be measured is strictly moved in an arc around the center of the circle, the deflection angle of the reflector is not required to be adjusted.
The invention has the following advantages:
the invention fully considers the actual working condition of the product, can more accurately and objectively obtain the driving current and the peak power of the generated COMD, has simple, convenient and reliable method, guides the using method of the high-power semiconductor laser, and can greatly improve the service life and the reliability of the laser product.
The device has the advantages of simple structure, stable and accurate work and convenient realization.
Drawings
Fig. 1 is a schematic diagram of the principle of the present invention.
Fig. 2 is a schematic diagram of the movement of the mirror in the vertical direction with respect to the semiconductor laser array to be tested.
Fig. 3 is a schematic diagram of the movement of the mirror along the horizontal direction with respect to the semiconductor laser array to be tested.
The reference numbers illustrate:
1-semiconductor laser array to be tested; 2-a driving power supply; 3-a power meter; 4-a cooling system; 5-mirror (movement trajectory); 6-positioning the platform (and stepping motor); 7-swing arm.
Detailed Description
The invention is further described in detail below with reference to the drawings and examples. It should be appreciated that the following is not a limitation on the claimed subject matter.
The normal semiconductor laser has a damage threshold of the optical power density of the cavity surface, the threshold is the maximum optical power density which can be borne by the cavity surface, and the qualified semiconductor laser maximizes the optical power density borne by the front cavity surface through cavity surface passivation and film coating so as to realize high power output. In fact, due to the fact that the semiconductor laser bar has some nonlinear optical phenomena such as space hole burning and optical fibers, light intensity distribution of the bar is uneven, light intensity of some positions is enhanced, light intensity of some positions is weakened, the positions with the enhanced light intensity work for a long time, optical catastrophe damage burning of the cavity surface is prone to occur, and if feedback light generated at some positions outside is also overlapped at the positions with the enhanced light intensity, the burning probability of the cavity surface is increased.
The high peak power semiconductor laser array chip comprises a plurality of light emitting points (40-60), the cavity length is usually 1-6mm, the width is 10mm, the thickness is 0.12mm, and the output power can reach 100-. With the complicated use conditions of the high-peak-power semiconductor laser array, optical catastrophic damage to the cavity surface caused by back reflection caused by external feedback is easy to occur, light fed back from the outside is superposed on the cavity surface of the laser chip, so that the optical power density of the cavity surface is increased, the temperature of the cavity surface is increased, the band gap at the cavity surface is shrunk, the light absorption is further intensified, vicious circle is formed, and finally the cavity surface is burnt.
In this embodiment, for a high-peak power semiconductor laser array device, in order to study the influence of returned light at different positions on cavity surface optical catastrophic damage, at different feedback positions in the horizontal and/or vertical directions, a reflecting mirror is actively arranged in a test environment to simulate feedback light in an actual working environment, and the drive current and the peak power of generated COMD are tested. In addition, the reflectivity (reflectivity 1% -10%) of the reflector can be adjusted to simulate different feedback intensities.
As shown in fig. 2 and 3, a device for testing optical catastrophe damage peak power of a cavity surface of a semiconductor laser, includes a positioning platform 6, a driving power supply 2, a power meter 3, at least one group of reflectors 5 and a driving adjustment assembly thereof, wherein the power meter 3 is disposed on an emergent light path of a semiconductor laser array 1 to be tested; the driving adjusting assembly is used for driving the reflector 5 to move in an arc manner by taking the array of the semiconductor laser to be detected as the circle center, and reflecting the laser to the cavity surface of the laser; the fixed orientation of the semiconductor laser array to be tested on the positioning platform is adjustable (vertically placed/horizontally placed); the driving adjusting assembly comprises a swing arm 7, an adapter and a stepping motor, the swing arm is arranged below the positioning platform 6 and is parallel to an installation plane of the semiconductor laser array to be detected on the positioning platform, the fixed end of the swing arm 7 is driven by the stepping motor to rotate, and a rotating shaft is coaxial with the center of the semiconductor laser array 1 to be detected and is vertical to the installation plane; the reflector 5 is arranged at the free end of the swing arm through an adapter piece, so that the reflector and the center of the semiconductor laser array to be tested are positioned at the same height.
As shown in fig. 2, the semiconductor laser array to be measured is horizontally placed on the positioning platform, and the swing arm is driven to move the mirror in the vertical direction with respect to the semiconductor laser array to be measured.
As shown in fig. 3, the semiconductor laser array to be measured is vertically placed on the positioning platform, and the swing arm is driven to move the reflector along the horizontal direction relative to the semiconductor laser array to be measured;
and adjusting the angle of a reflector at the free end of the swing arm to reflect laser to the cavity surface of the laser, increasing the driving current of the laser, and recording the power and current of COMD burning. During the test, the moving position of the reflector should avoid the detection surface of the laser power meter.
Specifically, the swing arm is controlled to move by the stepping motor, the moving step length of the stepping motor is controlled by the data acquisition card and the computer, the initial value of the swing arm movement is 0, namely the angle is 0, when the moving distance of the swing arm reaches the maximum value, the corresponding angle is 180 degrees, and the step lengths at equal intervals are set, so that the corresponding moving angle can be obtained. The swing arm connected with the reflector can finely adjust the reflector, so that the reflector can move along an arc by taking the center of the semiconductor laser array chip to be detected as the center of a circle when the swing arm moves.
In the embodiment, the reflecting mirror is arranged at the periphery of the light path between the semiconductor laser array and the power meter to provide external feedback, the feedback positions in the horizontal direction and the vertical direction are traversed, the degradation of the cavity surface is accelerated, the reflectivity of the reflecting mirror is between 1% and 10%, the peak power of the current semiconductor laser array chip is detected in real time by using the power meter through the drive of a high-current pulse power supply (0-2000A), and the peak power and the driving current when COMD occurs are recorded. By analyzing angle and position information, determining which feedback positions are easy to cause COMD burnout, thereby guiding the use method of the high-peak power semiconductor laser, avoiding return light at certain positions and angles in the use process, and prolonging the service life of the device.
Based on the device, the semiconductor laser array to be tested is driven by a large-current pulse power supply, and the COMD peak power of the laser is measured on line by arranging a power meter on the emergent light path of the semiconductor laser array to be tested, so that the method for testing the optical catastrophe damage peak power of the cavity surface of the semiconductor laser specifically comprises the following steps:
1) the pulse power supply drives the semiconductor laser array to be tested with a set initial current, and a reflector is arranged in a peripheral divergent area at a set distance on an emergent light path of the semiconductor laser array to be tested, so that part of divergent light of the semiconductor laser array to be tested is fed back to a cavity surface of the laser through the reflector; the initial current satisfies that the COMD burning of the semiconductor laser array to be tested does not occur no matter where the reflector is arranged; then, quantitatively increasing the driving current of the semiconductor laser array to be detected;
2) keeping the fixed position of the reflector for a set time (generally 5-10 minutes), and judging whether the laser power measured on line by the power meter is suddenly reduced or not; the critical power (peak power) at which COMD burnout occurs is typically more than 2 times the rated output power of the laser, until which the output power of the laser continues to increase;
if yes, judging that COMD burning occurs, and determining the cavity surface position of the semiconductor laser array to be tested, wherein COMD burning occurs, according to the current position and angle information of the reflector; then replacing another semiconductor laser array to be tested in the same batch, and executing the step 3);
if not, determining that COMD burning does not occur, and continuing to execute the step 3);
3) moving a reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, and adjusting the angle if necessary to ensure that part of divergent light of the semiconductor laser array to be detected is fed back to the cavity surface of the laser through the reflector; step 2) is executed again; in this step, the reflectivity of the mirror can be changed while keeping the driving current unchanged, and a plurality of different feedback positions can be traversed again. Specifically, different reflectors can be replaced, or reflective films with different reflectivities are arranged on the reflectors;
4) performing step 3) multiple times, thereby traversing multiple different feedback locations;
if at least one feedback position is burnt out by the COMD, recording the peak power and the driving current at the moment and the position of the cavity surface where the COMD is burnt out, and ending the test;
and if the COMD is not burnt, continuing to quantitatively increase the driving current of the semiconductor laser array to be tested, and executing the steps 2) to 4) again.
The value of the initial current can be directly obtained from an empirical value, or can be determined according to the following steps:
a) loading corresponding driving current according to 1.5-2 times of rated power;
b) keeping the fixed position of the reflector for a set time length, and judging whether the laser power measured on line by the power meter is obviously reduced or not;
if yes, judging that COMD burning occurs, taking another semiconductor laser array to be tested in the same batch for retesting, and reducing the driving current; then re-executing step b);
if not, determining that optical catastrophe damage does not occur, and executing the step c);
c) moving a reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, and adjusting the angle to enable part of divergent light of the semiconductor laser array to be detected to be fed back to the cavity surface of the laser through the reflector; step b) is executed again;
d) and c), executing the step c) for multiple times, so that when the situation that COMD burning does not occur under the current power condition is met, the current driving current is determined to be the initial current.
Therefore, before or during operation, the cavity surface position where the COMD burns out determined in the test method is used for inhibiting or eliminating feedback light factors of corresponding positions and angles in the environment, and ensuring that the high-power semiconductor laser runs below the peak power, so that the COMD burning out of a product can be avoided.
Claims (10)
1. A test method for optical catastrophe damage peak power of a cavity surface of a semiconductor laser drives a semiconductor laser array to be tested through a large-current pulse power supply, and simultaneously, the COMD peak power of the laser is measured on line through a power meter arranged on an emergent light path of the semiconductor laser array to be tested, and the test method is characterized by comprising the following steps:
1) the pulse power supply drives the semiconductor laser array to be tested with a set initial current, and a reflector is arranged in a peripheral divergent area at a set distance on an emergent light path of the semiconductor laser array to be tested, so that part of divergent light of the semiconductor laser array to be tested is fed back to a cavity surface of the laser through the reflector; the initial current satisfies that the COMD burning of the semiconductor laser array to be tested does not occur no matter where the reflector is arranged; then, quantitatively increasing the driving current of the semiconductor laser array to be detected;
2) keeping the fixed position of the reflector for a set time length, and judging whether the laser power measured on line by the power meter is suddenly reduced or not;
if yes, judging that COMD burning occurs, and determining the cavity surface position of the semiconductor laser array to be tested, wherein COMD burning occurs, according to the current position and angle information of the reflector; then replacing another semiconductor laser array to be tested in the same batch, and executing the step 3);
if not, determining that COMD burning does not occur, and continuing to execute the step 3);
3) moving the reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, so that part of divergent light of the semiconductor laser array to be detected is fed back to the cavity surface of the laser through the reflector; step 2) is executed again;
4) performing step 3) multiple times, thereby traversing multiple different feedback locations;
if at least one feedback position is burnt out by the COMD, recording the peak power and the driving current at the moment and the position of the cavity surface where the COMD is burnt out, and ending the test;
and if the COMD is not burnt, continuing to quantitatively increase the driving current of the semiconductor laser array to be tested, and executing the steps 2) to 4) again.
2. The method for testing the peak power of the optical catastrophic damage of the facet of a semiconductor laser as recited in claim 1, wherein the value of the initial current is determined in accordance with the following steps:
a) loading corresponding driving current according to 1.5-2 times of rated power;
b) keeping the fixed position of the reflector for a set time length, and judging whether the laser power measured on line by the power meter is obviously reduced or not;
if yes, judging that COMD burning occurs, taking another semiconductor laser array to be tested in the same batch for retesting, and reducing the driving current; then re-executing step b);
if not, determining that optical catastrophe damage does not occur, and executing the step c);
c) moving a reflector along a spherical surface with the semiconductor laser array to be detected as the center at the set distance, and adjusting the angle to enable part of divergent light of the semiconductor laser array to be detected to be fed back to the cavity surface of the laser through the reflector; step b) is executed again;
d) and c), executing the step c) for multiple times, so that when the situation that COMD burning does not occur under the current power condition is met, the current driving current is determined to be the initial current.
3. The method for testing the peak power of the optical catastrophic damage of the facet of a semiconductor laser as recited in claim 1, wherein in step 2), the fixed position of the mirror is maintained for a set period of time of 5-10 minutes.
4. The method for testing the peak power of the optical catastrophic damage of the cavity surface of the semiconductor laser according to claim 1, wherein the step 3) moves the reflector along a spherical surface with the array of the semiconductor laser to be tested as the center at the set distance, specifically: enabling the reflector to move along an arc in the vertical direction at a set step length relative to the semiconductor laser array to be detected, and then moving along the arc in the horizontal direction at the set step length; or two reflectors are arranged and move along circular arcs in the vertical direction and the horizontal direction respectively in a set step length.
5. The method for testing the peak power of the optical catastrophic damage of a facet of a semiconductor laser as recited in claim 1, further comprising changing the reflectivity of the mirror to traverse a plurality of different feedback positions again while maintaining the drive current constant.
6. The method for testing the peak power of the optical catastrophic damage of the cavity surface of the semiconductor laser as claimed in claim 4, wherein the changing of the reflectivity of the reflector is performed by replacing a different reflector or by arranging a reflective film with different reflectivity on the surface of the reflector; the adjusting range of the reflectivity is 1% -10%.
7. A method for using a high-power semiconductor laser is characterized in that before or during operation, feedback light factors of corresponding positions and angles in the environment are inhibited or eliminated aiming at the cavity surface position where COMD burning occurs and determined in the test method in claim 1; and ensures that the high power semiconductor laser operates below said peak power.
8. A semiconductor laser cavity surface optical catastrophe damage peak power testing device comprises a driving power supply and a power meter, wherein the power meter is arranged on an emergent light path of a semiconductor laser array to be tested; the laser device is characterized by further comprising a controller, at least one group of reflectors and a driving and adjusting assembly of the reflectors, wherein the driving and adjusting assembly is used for driving the reflectors to do arc movement by taking the array of the semiconductor laser device to be detected as the center of a circle, and enabling laser fed back by the reflectors to be reflected to the cavity surfaces of the laser device; the controller is used for collecting the driving current of the semiconductor laser array to be tested and the output power measured by the power meter, and the testing method of claim 1 is realized by controlling the driving power supply and the driving adjusting assembly.
9. The apparatus as claimed in claim 8, wherein the reflector is spatially located between the array of semiconductor lasers to be tested and the probing surface of the power meter, and the arc is moved to avoid the probing surface of the power meter.
10. The device for testing the optical catastrophe damage peak power of the cavity surface of the semiconductor laser device as claimed in claim 8, further comprising a positioning platform for fixedly mounting the semiconductor laser device array to be tested, wherein the fixed position of the semiconductor laser device array to be tested on the positioning platform is adjustable; the driving adjusting assembly comprises a swing arm, an adapter and a stepping motor, the swing arm is arranged below the positioning platform and is parallel to an installation plane of the semiconductor laser array to be detected on the positioning platform, the fixed end of the swing arm is driven by the stepping motor to rotate, and a rotating shaft is coaxial with the center of the semiconductor laser array to be detected and is vertical to the installation plane; the reflector is mounted at the free end of the swing arm through the adapter, so that the reflector and the center of the semiconductor laser array to be tested are located at the same height.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112798230A (en) * | 2020-12-29 | 2021-05-14 | 深圳市星汉激光科技股份有限公司 | Optical path testing system and method for light return resistance of semiconductor laser |
| CN116316038A (en) * | 2023-05-16 | 2023-06-23 | 度亘核芯光电技术(苏州)有限公司 | Testing device and method for semiconductor ring laser |
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