CN112047756A - Method for improving electrical property of ferroelectric/piezoelectric ceramic material - Google Patents

Method for improving electrical property of ferroelectric/piezoelectric ceramic material Download PDF

Info

Publication number
CN112047756A
CN112047756A CN202010810673.9A CN202010810673A CN112047756A CN 112047756 A CN112047756 A CN 112047756A CN 202010810673 A CN202010810673 A CN 202010810673A CN 112047756 A CN112047756 A CN 112047756A
Authority
CN
China
Prior art keywords
ferroelectric
polarization
piezoelectric ceramic
ceramic material
polarization treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010810673.9A
Other languages
Chinese (zh)
Inventor
聂恒昌
董显林
曹菲
王根水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Institute of Ceramics of CAS
Original Assignee
Shanghai Institute of Ceramics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Institute of Ceramics of CAS filed Critical Shanghai Institute of Ceramics of CAS
Priority to CN202010810673.9A priority Critical patent/CN112047756A/en
Publication of CN112047756A publication Critical patent/CN112047756A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

The invention relates to a method for improving the electrical property of a ferroelectric/piezoelectric ceramic material, which comprises the steps of carrying out primary polarization treatment and secondary polarization treatment on the ferroelectric/piezoelectric ceramic material so as to improve the electrical property of the ferroelectric/piezoelectric ceramic material related to electric domain orientation; the polarizing electric field E of the first polarization treatment11 to 5 times of ECThe Ec is the coercive field of the ferroelectric/piezoelectric ceramic material; the polarizing electric field E of the second polarization treatment2Direction of (D) and polarization electric field E1In the same direction, and E1≤E2<Eb,EbBreakdown field strength of ferroelectric/piezoelectric ceramic material, and temperature T of second polarization treatment2< temperature T of first polarization treatment1

Description

Method for improving electrical property of ferroelectric/piezoelectric ceramic material
Technical Field
The invention relates to a method for improving the electrical property of a ferroelectric/piezoelectric ceramic material, belonging to the field of ferroelectric/piezoelectric ceramic materials of functional materials.
Background
The ferroelectric/piezoelectric ceramic material plays an important role in electric, acoustic, thermal, force and optical sensing and energy conversion devices as an important functional material, and is widely applied to high and new technical fields of electronic information technology, aerospace, nondestructive testing, ultrasonic diagnosis, intelligent systems and the like.
The application of ferroelectric/piezoelectric ceramic material is based on the spontaneous polarization, and the direction of the spontaneous polarization can be changed under the action of an applied electric field. It is well known that ferroelectric/piezoelectric ceramic materials achieve desired electrical properties, and typically require poling of the ferroelectric/piezoelectric ceramic material by application of an electric field. Poling is the process of aligning the domain inversion orientations in ferroelectric/piezoelectric ceramic materials by applying an electric field. Under the action of a certain electric field, a certain temperature and a certain time, the ferroelectric domains are oriented and arranged preferentially along the direction of the electric field to generate permanent polarization, and then the ferroelectric domains have macroscopic polarization performance and show ferroelectric, piezoelectric, pyroelectric and electro-optic effects and the like. The orientation of ferroelectric domains and the associated domain wall motion are directly related to the macroscopic properties of ferroelectric/piezoceramic materials, such as dielectric, ferroelectric, piezoelectric, pyroelectric and electrooptical properties.
The polarization electric field, polarization temperature and polarization time required for polarization of different materials vary greatly. Generally, the polarizing electric field needs to be higher than the coercive field (E)C),ECIs the critical electric field for the ferroelectric domain to be deflected, ECIs the lower limit of the polarizing electric field. However, only the performance exhibited after reaching the saturation polarization is better suited for the application. The saturation electric field required to reach the saturation polarization state is usually 3-4 times higher than the coercive field. On the other hand, it is obviously advantageous that both the coercive field and the saturation electric field decrease with increasing temperature, and polarization can be performed at higher temperatures, but dielectric breakdown may occur because the insulation resistance and the breakdown field strength of the material decrease rapidly at high temperatures, and thus the breakdown field strength is the upper limit of the polarization voltage. The poling time depends on the amount of energy required for thermal motion of the ferroelectric domain, which is related to temperature, and the amount of driving force to drive the ferroelectric domain to switch direction, which is related to the magnitude of the applied electric field. The length of the polarization time can be adjusted according to the magnitude of the polarization voltage. In practical work, the optimal polarization condition is generally obtained by combination experiment exploration, and usually, an electric field 2-3 times of the coercive field is applied under a certain high temperature (dozens to hundreds of degrees centigrade), and the pressure is maintainedFor a suitable time (minutes to hours).
In the high-temperature polarization process, the movement activity of the ferroelectric domain is increased, the reversal of the ferroelectric domain (polarization) is facilitated, the coercive field and the saturated polarization electric field are reduced simultaneously, and the saturated polarization state is more easily achieved. However, under high temperature conditions, the turning (backswitching) of the ferroelectric domain after the electric field is unloaded is also a common phenomenon, and the degree and time of turning of the ferroelectric domain vary with the material, and generally the higher the temperature is, the greater the degree of turning of the electric domain is. The turning of the ferroelectric domains causes a reduction in electrical properties, which is one cause of the deterioration of the properties of the ferroelectric/piezoelectric ceramic material. At present, the ferroelectric/piezoelectric ceramic material with excellent performance is obtained mainly by component design such as ion doping, solid solution and the like or by optimization of preparation process in the field.
Disclosure of Invention
Aiming at the problems, the invention aims to realize the weakening of the ferroelectric domain rotation effect in the high-temperature polarization process of the ferroelectric/piezoelectric ceramic material through the optimization of the polarization process, and provides a method for improving the electrical properties (such as residual polarization strength, piezoelectric constant, electromechanical coupling coefficient and the like) of the ferroelectric/piezoelectric ceramic material, wherein the ferroelectric/piezoelectric ceramic material is subjected to first polarization treatment and second polarization treatment so as to improve the electrical properties of the ferroelectric/piezoelectric ceramic material related to domain orientation;
the polarizing electric field E of the first polarization treatment11 to 5 times of ECThe Ec is the coercive field of the ferroelectric/piezoelectric ceramic material;
the polarizing electric field E of the second polarization treatment2Direction of (D) and polarization electric field E1In the same direction, and E1≤E2<Eb,EbBreakdown field strength of ferroelectric/piezoelectric ceramic material, and temperature T of second polarization treatment2< temperature T of first polarization treatment1
In the present disclosure, the polarization electric field E along the first polarization treatment1In the direction of (A) applies again a polarizing electric field E2And control E1≤E2<Eb(EbIs breakdown of ferroelectric/piezoelectric ceramic materialField strength) and temperature T of the second polarization treatment2< temperature T of first polarization treatment1Under the condition, the rotation of the ferroelectric domain of the second polarization treatment is far lower than that of the process of the first polarization treatment, and the electric field E in the ferroelectric/piezoelectric ceramic material after the first high-temperature polarization treatment is optimized from the polarization process1Part of the ferroelectric domain that takes place and turns back (backswitching) on unloading follows the second poling direction (poling field E)2) Reorienting to obtain the ferroelectric/piezoelectric ceramic material with excellent performance.
Preferably, the temperature T of the second polarization treatment2Is 10 to 50 ℃, for example, room temperature range, preferably 15 to 30 ℃.
Preferably, the time of the first polarization treatment is 5 to 30 minutes.
Preferably, the time of the second polarization treatment is 1 to 60 seconds.
Preferably, the ferroelectric/piezoelectric ceramic material is PZT piezoelectric ceramic, PZST ferroelectric ceramic, BaTiO3Base piezoelectric ceramics or similar ceramic systems obtained by modification or solution treatment. The ferroelectric/piezoelectric ceramic material comprises a common ferroelectric/piezoelectric ceramic material system and components thereof, and can be in the form of single crystal, ceramic, thin film, thick film or multilayer components.
Preferably, the polarization environment of the first polarization treatment and the second polarization treatment is an oil bath environment, an air atmosphere or a vacuum atmosphere.
In another aspect, the present invention also provides a ferroelectric/piezoelectric ceramic material prepared according to the above method.
Has the advantages that:
the method can weaken the ferroelectric domain gyration effect generated when the ferroelectric/piezoelectric ceramic material is polarized at high temperature, and compared with the material which is not subjected to secondary polarization treatment, the electric properties of the treated ferroelectric/piezoelectric ceramic material related to domain orientation can be improved to a certain extent. The process method has strong operability and obvious effect, and can be used for the engineering production of ferroelectric/piezoelectric ceramic materials.
Detailed Description
The present invention is further illustrated by the following examples, which are to be understood as merely illustrative and not restrictive.
The present disclosure aims to achieve reorientation of a part of ferroelectric domains that rotate after an electric field is unloaded in a high-temperature polarization process of a ferroelectric/piezoelectric ceramic material by optimizing a polarization process, and provides a polarization method for improving electrical properties of the ferroelectric/piezoelectric ceramic material. Specifically, the ferroelectric/piezoelectric ceramic material is subjected to polarization treatment twice, so that the electrical properties of the ferroelectric/piezoelectric ceramic material related to electric domain orientation, such as remnant polarization, piezoelectric constant, electromechanical coupling coefficient and the like, are improved.
The following exemplary method of improving the electrical properties of ferroelectric/piezoelectric ceramic materials is described.
Generally, under proper polarization conditions, the ferroelectric/piezoelectric ceramic material is subjected to a first polarization treatment to achieve a saturation polarization effect, i.e., the saturation polarization effect should enable the ceramic to obtain better electrical properties. Wherein the first polarization treatment applies a polarization electric field E1The direction of (A) is the direction in which the performance is to be obtained, usually a DC electric field, which may be continuous, discontinuous or of varying strength, and has a magnitude of (1-5) ECAnd Ec is the coercive field of the ferroelectric/piezoelectric ceramic material. Temperature T of first polarization treatment1Higher than room temperature (50-200 ℃) and lower than the Curie point T of the ferroelectric/piezoelectric ceramic materialCUsually, at tens to hundreds of degrees centigrade, the sample reaches the saturated polarization state through the first polarization treatment, and the sample can reach the saturated state by higher electric field intensity and longer polarization time. And after the first polarization treatment, naturally cooling the temperature of the sample to room temperature.
In an alternative embodiment, the temperature of the first polarization treatment is preferably set to 50 to 200 ℃, and the polarization time may be preferably 10 to 30 min. The first polarization is preferably DC, with electric field intensity E1The preferred range is 1.5-3Ec(e.g., 2 to 4 kV/mm). The polarized environment may be an oil bath, an air environment, or a vacuum environment.
And then carrying out second polarization treatment on the material along the direction of the first polarization treatment, namely the direction of an electric field applied by the second polarization treatment is the same as the direction of the first polarization electric field. The second polarization treatment is used for inhibiting backswitching of the ferroelectric domains in the ferroelectric piezoelectric ceramic material, and the electrical performance is improved by inhibiting the gyration of the ferroelectric domains through secondary polarization. The second polarization treatment should be at a higher electric field intensity E2(electric field amplitude equal to or greater than first polarization electric field E1But should be less than the breakdown field strength E of the materialb. Preferred electric field intensity E2The method is carried out under 2-5 times of the coercive field Ec of the ceramic material, the waveform can be continuous, discontinuous or variable-strength, and the polarization environment can be an oil bath environment, an air environment or a vacuum environment. Temperature T of second polarization treatment2Below T1The temperature is preferably room temperature (e.g., 15 to 30 ℃), and the polarization time may be long or short (preferably, only 1 to 30 seconds). The polarized environment may be an oil bath, an air environment, or a vacuum environment. Wherein the polarization effect of the second polarization treatment is to reorient the ferroelectric domain of the part of the ferroelectric/piezoelectric ceramic material which turns (backswitching) after the unloading of the first high-temperature polarization electric field along the direction of the first polarization treatment.
The ferroelectric/piezoelectric ceramic material comprises a common ferroelectric/piezoelectric ceramic material system and components thereof, and can be in the form of single crystal, ceramic, thin film, thick film or multilayer device.
In the present disclosure, ferroelectric/piezoelectric ceramic materials (e.g., Pb (Zr, Ti) O) can be realized using the above-described method3Radical or BaTiO3Based on ferroelectric piezoelectric ceramic material, or Pb (Zr, Ti) O3Radical or BaTiO3A corresponding ceramic system obtained by modifying or solid-dissolving the base ferroelectric piezoelectric ceramic material) and reorienting the rotary part of the ferroelectric domain after the unloading of the polarization electric field under the high-temperature condition. Since the second poling temperature is significantly lower than the first poling temperature, the poling electric field is higher than the first poling electric field, and the rotation of the ferroelectric domain under this condition is much lower than that of the first poling process. Thus, the effect of this method is to make the ferroelectric piezoelectric ceramic material associated with domain orientation as compared with the state without the secondary polarization treatmentThe electrical performance is improved to a certain degree. The invention is based on the idea of backspitching for inhibiting ferroelectric domains in the ferroelectric piezoelectric ceramic material, and the electrical property is improved by secondary polarization.
In the present invention, d is used33Quasi-static measuring instrument for testing piezoelectric constant d of ferroelectric/piezoelectric ceramic material33. And testing the residual polarization intensity Pr of the ferroelectric ceramic material by adopting a thermal depolarization method. And testing the radial coupling coefficient kp of the piezoceramic material by adopting a resonance-anti-resonance method.
The present invention will be described in detail by way of examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art may be made in light of the above teachings. The specific process parameters and the like of the following examples are also only one example of suitable ranges, i.e., those skilled in the art can select the appropriate ranges through the description herein, and are not limited to the specific values exemplified below. Unless otherwise specified in the following examples, room temperature is generally 25 ℃.
Example 1
(1) Under the condition of oil bath with the electric field intensity of 3kV/mm and the temperature of 100 ℃, blocky Pb is put into0.99(Zr0.95Ti0.05)0.98Nb0.02O3(PZT95/5) polarizing a ferroelectric ceramic sample (thickness 2mm) for 10 minutes, finishing the first polarization treatment, taking out the sample, and cooling to room temperature;
(2) carrying out secondary polarization treatment on the sample in the direction of the first polarization treatment electric field at room temperature (25 ℃) and under a 4kV/mm electric field, wherein the polarization time is 5 seconds;
(3) taking the sample after the two polarization treatments and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 1, and the longitudinal piezoelectric constant d of the PZT95/5 ferroelectric ceramic33And the remanent polarization increased.
Example 2
(1) Oil bath condition at electric field intensity of 3kV/mm and 100 DEG CThen, Pb is added0.99(Zr0.81Sn0.14Ti0.05)0.98Nb0.02O3Polarizing a (PZST) ferroelectric ceramic sample (with the thickness of 1mm) for 10 minutes, finishing the first polarization treatment, taking out the sample, and cooling to room temperature;
(2) carrying out second polarization treatment on the sample in the direction of the first polarization treatment electric field at room temperature (25 ℃) and under a 3.5kV/mm electric field, wherein the polarization time is 5 minutes;
(3) taking the sample after twice polarization treatment and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 2, and the longitudinal piezoelectric constant d of the PZST ferroelectric ceramic33And the remanent polarization increased.
Example 3
(1) Polarizing a blocky PZT-5H piezoelectric ceramic sample (with the thickness of 1mm) for 15 minutes in an air environment with the electric field intensity of 2.5kV/mm and the temperature of 90 ℃, finishing the first polarization treatment, taking out the sample, and cooling to the room temperature;
(2) carrying out second polarization treatment on the sample in the direction of the first polarization treatment electric field at room temperature (25 ℃) and under a 3.5kV/mm electric field, wherein the polarization time is 60 seconds;
(3) taking the sample after twice polarization treatment and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 3, and the longitudinal piezoelectric constant d of the PZT-5H piezoelectric ceramic33And kp increase.
Example 4
(1) Polarizing a blocky PZT-5 ferroelectric ceramic sample (with the thickness of 1mm) for 10 minutes in an air environment with the electric field intensity of 3kV/mm at 110 ℃, finishing the first polarization treatment, taking out the sample, and cooling to room temperature;
(2) carrying out secondary polarization treatment on the sample in the direction of the first polarization treatment electric field at room temperature (-25 ℃) and under a 4kV/mm electric field for 30 seconds;
(3) taking the sample after twice polarization treatment and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 4, and the longitudinal piezoelectric constant d of the PZT-5 piezoelectric ceramic33And kp increase.
Example 5
(1) Under the condition of oil bath with the electric field intensity of 2kV/mm and the temperature of 140 ℃, the blocky BaTiO is put into oil bath3Polarizing a ferroelectric ceramic sample (with the thickness of 3mm) for 20 minutes to finish first polarization treatment, taking out the sample, and cooling to room temperature;
(2) carrying out second polarization treatment on the sample in the direction of the first polarization treatment electric field at the temperature of 50 ℃ under the electric field of 3.5kV/mm, wherein the polarization time is 3 minutes;
(3) taking the sample after twice polarization treatment and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 5, and the longitudinal piezoelectric constant d of the BT piezoelectric ceramic33And kp increase.
Table 1:
Figure BDA0002630864280000051
Figure BDA0002630864280000066
table 2:
Figure BDA0002630864280000061
table 3:
Figure BDA0002630864280000062
table 4:
Figure BDA0002630864280000063
table 5:
Figure BDA0002630864280000064
example 6
The process of example 6 is similar to that of example 1, except that: the second polarization processing parameters include: carrying out secondary polarization treatment on the sample in the direction of the first polarization treatment electric field at room temperature under the electric field of 3kV/mm for 5 seconds; taking the sample after the two polarization treatments and the sample in the first polarization treatment state, testing the related electrical properties, wherein the specific numerical values are shown in Table 1, and the longitudinal piezoelectric constant d of the PZT95/5 ferroelectric ceramic33And the remanent polarization increased.
Table 6:
Figure BDA0002630864280000065
Figure BDA0002630864280000071
comparative example 1
The process of comparative example 1 is similar to that of example 1, except that: the second polarization processing parameters include: under the conditions of the electric field intensity of 3kV/mm and 100 ℃ oil bath, a PZT95/5 ferroelectric ceramic sample (the thickness of 2mm) after primary polarization treatment is subjected to secondary polarization for 10 minutes, relevant parameters refer to a table 7, and the performance improvement is limited because the secondary polarization temperature is too high and the activity of a ferroelectric domain is higher, and even if the ferroelectric domain is subjected to secondary polarization process treatment, the ferroelectric domain still has certain backswitching when the ferroelectric domain returns to the room temperature, and the performance improvement is not facilitated.
Table 7:
Figure BDA0002630864280000072
comparative example 2
The process of comparative example 2 is similar to that of example 1, except that: the sample was subjected to a second polarization treatment at room temperature under an electric field of 4kV/mm for 5 seconds in a direction opposite to the direction of the electric field of the first polarization treatment, and the relevant parameters thereof were as shown in Table 8.
Table 8:
Figure BDA0002630864280000073

Claims (8)

1. a method for improving the electrical property of a ferroelectric/piezoelectric ceramic material is characterized in that the ferroelectric/piezoelectric ceramic material is subjected to first polarization treatment and second polarization treatment to improve the electrical property of the ferroelectric/piezoelectric ceramic material related to electric domain orientation;
the polarizing electric field E of the first polarization treatment11 to 5 times of ECThe Ec is the coercive field of the ferroelectric/piezoelectric ceramic material;
the polarizing electric field E of the second polarization treatment2Direction of (D) and polarization electric field E1In the same direction, and E1≤E2<Eb,EbBreakdown field strength of ferroelectric/piezoelectric ceramic material, and temperature T of second polarization treatment2< temperature T of first polarization treatment1
2. Method according to claim 1, characterized in that the temperature T of the first poling treatment1Greater than 50 ℃ and less than the Curie point T of the ferroelectric/piezoelectric ceramic materialC
3. Method according to claim 1 or 2, characterized in that the temperature T of the second poling treatment2Is 10 to 50 ℃, preferably 10 to 30 ℃.
4. The method according to any one of claims 1 to 3, wherein the time of the first polarization treatment is 5 to 30 minutes.
5. The method according to any one of claims 1 to 4, wherein the time of the second polarization treatment is 1 to 60 seconds.
6. The method according to any of claims 1-5, wherein the ferroelectric/piezoceramic material is PZT piezoceramic, PZST ferroelectric ceramic, BaTiO3A base piezoelectric ceramic or a ceramic system obtained by modification or solid solution.
7. The method according to any one of claims 1 to 6, wherein the polarization environment of the first polarization treatment and the second polarization treatment is an oil bath environment, an air atmosphere, or a vacuum atmosphere.
8. A ferroelectric/piezoelectric ceramic material prepared according to the method of any one of claims 1-7.
CN202010810673.9A 2020-08-13 2020-08-13 Method for improving electrical property of ferroelectric/piezoelectric ceramic material Pending CN112047756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010810673.9A CN112047756A (en) 2020-08-13 2020-08-13 Method for improving electrical property of ferroelectric/piezoelectric ceramic material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010810673.9A CN112047756A (en) 2020-08-13 2020-08-13 Method for improving electrical property of ferroelectric/piezoelectric ceramic material

Publications (1)

Publication Number Publication Date
CN112047756A true CN112047756A (en) 2020-12-08

Family

ID=73601639

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010810673.9A Pending CN112047756A (en) 2020-08-13 2020-08-13 Method for improving electrical property of ferroelectric/piezoelectric ceramic material

Country Status (1)

Country Link
CN (1) CN112047756A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114175304A (en) * 2021-03-31 2022-03-11 宁德新能源科技有限公司 Negative pole piece, electrochemical device comprising same and electronic device
CN114287071A (en) * 2021-03-31 2022-04-05 宁德新能源科技有限公司 Negative pole piece, lithium metal battery containing negative pole piece and electronic device
WO2024032650A1 (en) * 2022-08-12 2024-02-15 桂林电子科技大学 High-temperature polarization method for strip-shaped or rod-shaped piezoelectric ceramics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104230333A (en) * 2014-02-27 2014-12-24 中国科学院声学研究所 High-temperature piezoelectric ceramic material and preparation method thereof
CN109037432A (en) * 2018-07-24 2018-12-18 歌尔股份有限公司 Piezoelectric element temperature-changing polarization device and method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104230333A (en) * 2014-02-27 2014-12-24 中国科学院声学研究所 High-temperature piezoelectric ceramic material and preparation method thereof
CN109037432A (en) * 2018-07-24 2018-12-18 歌尔股份有限公司 Piezoelectric element temperature-changing polarization device and method

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
张玉龙主编: "《高技术复合材料制备手册》", 31 May 2003, 国防工业出版社 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114175304A (en) * 2021-03-31 2022-03-11 宁德新能源科技有限公司 Negative pole piece, electrochemical device comprising same and electronic device
CN114287071A (en) * 2021-03-31 2022-04-05 宁德新能源科技有限公司 Negative pole piece, lithium metal battery containing negative pole piece and electronic device
WO2024032650A1 (en) * 2022-08-12 2024-02-15 桂林电子科技大学 High-temperature polarization method for strip-shaped or rod-shaped piezoelectric ceramics

Similar Documents

Publication Publication Date Title
CN112047756A (en) Method for improving electrical property of ferroelectric/piezoelectric ceramic material
Guo et al. High-performance sm-doped Pb (Mg1/3Nb2/3) O3-PbZrO3-PbTiO3-based piezoceramics
Tsurumi et al. 90° domain reorientation and electric-field-induced strain of tetragonal lead zirconate titanate ceramics
Damjanovic Ferroelectric, dielectric and piezoelectric properties of ferroelectric thin films and ceramics
US5998910A (en) Relaxor ferroelectric single crystals for ultrasound transducers
Guo et al. Piezoelectric ceramics with high piezoelectricity and broad temperature usage range
Zhao et al. Electromechanical properties of relaxor ferroelectric lead magnesium niobate-lead titanate ceramics
Li et al. Pinning and depinning mechanism of defect dipoles in PMnN–PZT ceramics
Zhou et al. Rate dependence of soft PZT ceramics under electric field loading
US8241519B2 (en) Relaxor-PT ferroelectric single crystals
Dursun et al. Enhancement of electrical properties in the ternary PMN–PT–PZ through compositional variation, crystallographic texture, and quenching
Feng et al. Composition and orientation dependence of phase configuration and dielectric constant tunability in poled Pb (Mg1/3Nb2/3) O3–PbTiO3 single crystals
Wu et al. Investigation on resonant vibration performances of Fe‐doped BiScO3–PbTiO3 ceramics in high‐temperature environment
Kholkin et al. Electromechanical properties of sol-gel derived Ca-modified PbTiO 3 films
Yan et al. Large and stable shape memory effect realized by defect dipoles in acceptor‐doped ferroelectric ceramics
Gao et al. Crystal structure and piezoelectric properties of xPb (Mn1/3Nb2/3) O3–(0.2− x) Pb (Zn1/3Nb2/3) O3–0.8 Pb (Zr0. 52Ti0. 48) O3 ceramics
Xiong et al. Optimizing the piezoelectric and dielectric properties of Pb (In 1/2 Nb 1/2) O₃-PbTiO₃ ferroelectric crystals via alternating current poling waveform
Hall et al. Ageing of high field dielectric properties in-based piezoceramics
Leng et al. Polarization fatigue mechanism of high-power textured piezoelectric ceramics
Hackenberger et al. Effect of grain size on actuator properties of piezoelectric ceramics
Wang The piezoelectric and dielectric properties of PZT–PMN–PZN
Koh et al. Degradation and cracking behavior of 0.2 (PbMg1/3Nb2/3O3)–0.8 (PbZr0. 475Ti0. 525O3) multilayer ceramic actuators
Zhou et al. Dielectric and transverse piezoelectric properties of sol-gel-derived (001) Pb [Yb 1/2 Nb 1/2] O 3–PbTiO 3 epitaxial thin films
LI et al. DC bias electric field dependent piezoelectricity for [001] poled Pb (In1/2Nb1/2) O3–Pb (Mg1/3Nb2/3) O3–PbTiO3 crystals
Maiwa et al. Electrical and electromechanical properties of PbZrO3 thin films prepared by chemical solution deposition

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20201208

RJ01 Rejection of invention patent application after publication