CN112047635A - Preparation method and application of efficient all-inorganic perovskite quantum dot glass - Google Patents
Preparation method and application of efficient all-inorganic perovskite quantum dot glass Download PDFInfo
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 58
- 239000011521 glass Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- JHJLBTNAGRQEKS-UHFFFAOYSA-M sodium bromide Chemical compound [Na+].[Br-] JHJLBTNAGRQEKS-UHFFFAOYSA-M 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 claims abstract description 26
- 239000011812 mixed powder Substances 0.000 claims abstract description 18
- 229910000024 caesium carbonate Inorganic materials 0.000 claims abstract description 15
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 15
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 15
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 15
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 15
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 15
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 15
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 7
- 230000008018 melting Effects 0.000 claims abstract description 7
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 239000005022 packaging material Substances 0.000 claims abstract description 5
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 claims abstract description 5
- 238000002156 mixing Methods 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011159 matrix material Substances 0.000 abstract description 11
- 239000000126 substance Substances 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 abstract description 3
- 239000005304 optical glass Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 239000013080 microcrystalline material Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- 238000006862 quantum yield reaction Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005424 photoluminescence Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001194 electroluminescence spectrum Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- -1 halide anion Chemical class 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/16—Halogen containing crystalline phase
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B25/00—Annealing glass products
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
- C03B5/16—Special features of the melting process; Auxiliary means specially adapted for glass-melting furnaces
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C1/00—Ingredients generally applicable to manufacture of glasses, glazes, or vitreous enamels
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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Abstract
The invention relates to a preparation method and application of high-efficiency all-inorganic perovskite quantum dot glass, and belongs to the technical field of optical glass preparation. High purity B of the invention2O3、SiO2、ZnO、SrCO3、Cs2CO3、PbBr2Placing the mixed powder of NaBr and NaBr in an air atmosphere at 1150-1250 ℃ for high-temperature melting for 10-20 min, pouring and cooling to form perovskite quantum dot glassHigh-temperature stress removal treatment and optical polishing treatment are carried out for a time to obtain the fully inorganic perovskite CsPbBr3Quantum dot glass. The invention CsPbBr3The glass matrix has a homogeneous distribution such that the glass matrix has a transmittance in the visible wavelength range of more than 86%, CsPbBr3The quantum dot glass has excellent thermal stability and chemical stability, and can be used for preparing LED device packaging materials.
Description
Technical Field
The invention relates to a preparation method and application of high-efficiency all-inorganic perovskite quantum dot glass, and belongs to the technical field of optical glass preparation.
Background
CsPbX with attractive optical properties such as high defect tolerance, wide spectrum harmonious range, high photoluminescence quantum yield (PLQY) and narrow emission width3(X ═ Cl, Br, I) perovskite quantum dots are unique optical materials with great potential in solar cells, photodetectors, displays, LEDs and laser applications. CsPbX3The emission wavelength of the quantum dots can be easily tuned by replacing the halide anion to achieve full visible spectrum coverage. Furthermore, CsPbX is a very important material because of its easy synthesis and inexpensive raw material3(X ═ Cl, Br, I) quantum dots are one of the most cost-competitive optical materials. From a stability point of view, however, the perovskite CsPbX is formed due to the water/thermal/photosensitive ionic structure and the higher surface energy3Quantum dots (X ═ Cl, Br, I) are unstable, and therefore, there is a strong demand for perovskite CsPbX having good stability while maintaining its excellent optical properties3。
In the existing synthesis technologies, such as a thermal injection method, a supersaturation crystallization method, a sol-gel reaction method and a composite synthesis method, methods for synthesizing halide nanocrystals from different materials, including solutions, films and composite materials, are researched, but for CsPbX, the method is suitable for CsPbX3The thermal and chemical stability improvement of perovskite quantum dots is very limited.
Disclosure of Invention
Aiming at the existing CsPbX3The invention provides high-efficiency all-inorganic perovskite quantum dot glassThe preparation method and the application thereof are that CsPbBr is used3The quantum dots are uniformly distributed on the glass matrix, so that the transmittance of the quantum dots in a visible wavelength range is over 86 percent, and CsPbBr3The quantum yield of the quantum dot glass is over 40%, and meanwhile, due to the excellent stability of the quantum dot glass, the synthesized LED device packaging material still keeps stable light output under different driving currents.
A preparation method of high-efficiency all-inorganic perovskite quantum dot glass is characterized by comprising the following specific steps:
(1) mixing high-purity B2O3、SiO2、ZnO、SrCO3、Cs2CO3、PbBr2Grinding the mixture and NaBr to obtain mixed powder;
(2) placing the mixed powder in the step (1) in an air atmosphere at the temperature of 1150-1250 ℃ for high-temperature melting for 10-20 min, pouring, cooling and forming to obtain perovskite quantum dot glass;
(3) sequentially carrying out high-temperature stress relief treatment and optical polishing treatment on the perovskite quantum dot glass obtained in the step (2) to obtain the fully inorganic perovskite CsPbBr3Quantum dot glass.
The step (1) B2O3、SiO2、ZnO、SrCO3Is a glass matrix, Cs2CO3、PbBr2NaBr is microcrystalline material; b in the mixed powder is calculated by mole fraction2O330～40％、SiO 220～45％、ZnO15～20％、SrCO32～4％、Cs2CO38～12％、PbBr25-21% and NaBr 6-9%.
The temperature of the high-temperature stress relief treatment in the step (3) is 350-380 ℃, and the stress relief time is 3-8 h.
The high-efficiency all-inorganic perovskite quantum dot glass is used for preparing LED device packaging materials.
The material with high luminous efficiency is beneficial to preparing LED device packaging materials, stable white light output is realized by mixing red, green and blue three primary colors, the PLE spectra of red powder and green powder are required to be overlapped, the stability is kept in the packaging process, and the material has excellent weather resistance; perovskite materialHowever, the invention has extremely high quantum efficiency, low cost and simple preparation process, but has poor stability, and aims to solve the problem of CsPbX obstruction3The application of the glass as CsPbX in the photoelectric field3The matrix material not only effectively overcomes the defects of easy agglomeration and decomposition, easy environmental corrosion and the like, but also can improve CsPbX3The dispersion uniformity, photochemical stability, mechanical durability and the like, and simultaneously, the surface passivation of the perovskite quantum dots can be realized to improve the quantum yield.
The invention has the beneficial effects that:
(1) the invention CsPbBr3The high-efficiency all-inorganic perovskite quantum dot glass has the characteristics of high brightness, high stability and high transparency, the visible light wave band transmittance reaches 89%, the light scattering is obviously reduced, and the quantum efficiency reaches 45%;
(2) the invention CsPbBr3The quantum dots are protected by the inert inorganic glass matrix, so that the fluorescent material has good chemical stability and high mechanical property, and is not easy to damage in the practical application process;
(3) CsPbBr of the invention3The preparation process of the quantum dot glass material is simple and efficient, the cost is low, compared with the traditional melting annealing process, the production process is obviously reduced, and the high quantum efficiency is kept.
Drawings
FIG. 1 shows different PbBr of example 12The concentration of the obtained perovskite quantum dot glass is obtained by taking a photo and a related characteristic absorption spectrum under the excitation of a 365 ultraviolet lamp in sunlight;
FIG. 2 shows different PbBr of example 12Emission and excitation spectra of the perovskite quantum dot glass obtained by concentration;
FIG. 3 shows different PbBr of example 12The attenuation spectrum of the perovskite quantum dot glass obtained by concentration;
FIG. 4 shows example 2PbBr2An XRD (X-ray diffraction) spectrum of the perovskite quantum dot glass obtained when the concentration is 17 mol%;
FIG. 5 shows example 2PbBr2The temperature-variable spectrogram of the perovskite quantum dot glass obtained when the concentration is 17 mol%;
FIG. 6 is a graph of the electroluminescence spectrum at 2.7V for a packaged LED device of example 3;
fig. 7 is CIE coordinates of spectra of example 3, a packaged LED device.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments, but the scope of the present invention is not limited to the description.
Example 1: an efficient preparation method of all-inorganic perovskite quantum dot glass comprises the following specific steps:
(1) mixing high-purity B2O3、SiO2、ZnO、Cs2CO3、SrCO3、PbBr2Grinding NaBr to obtain mixed powder; wherein B is2O3、SiO2、ZnO、SrCO3Is a glass matrix, Cs2CO3、PbBr2The NaBr is a microcrystalline material, and the mole percentage of the raw materials in the mixed powder is shown in the table 1 in terms of mole fraction;
TABLE 1 molar fractions of the component materials
| Sample (I) | B2O3 | SiO2 | ZnO | SrCO3 | Cs2CO3 | PbBr2 | NaBr |
| 1 | 32％ | 24％ | 10％ | 4％ | 5％ | 21％ | 4％ |
| 2 | 32％ | 26％ | 10％ | 4％ | 5％ | 19％ | 4％ |
| 3 | 32％ | 28％ | 10％ | 4％ | 5％ | 17％ | 4％ |
| 4 | 32％ | 30％ | 10％ | 4％ | 5％ | 15％ | 4％ |
| 5 | 32％ | 32％ | 10％ | 4％ | 5％ | 13％ | 4％ |
(2) Melting the mixed powder in the step (1) at 1200 ℃ in an air atmosphere for 12min at a high temperature, pouring the molten powder onto a copper plate preheated to 400 ℃, and cooling and forming to obtain perovskite quantum dot glass;
(3) sequentially carrying out high-temperature stress relief treatment and optical polishing treatment on the perovskite quantum dot glass obtained in the step (2) to obtain the fully inorganic perovskite CsPbBr3The temperature of the high-temperature stress relief treatment is 380 ℃, and the stress relief time is 4 h;
different PbBr2The picture and related characteristic absorption spectrum of the perovskite quantum dot glass obtained by concentration under the sunlight and the excitation of 365 ultraviolet lamp are shown in figure 1, 200-350nm is the characteristic absorption of silicate glass, and the separated CsPbBr can be seen3The perovskite glass of the quantum dots still maintains the value of PbBr2CsPbBr appeared at concentrations of 15, 17 mol%3The characteristic absorption of the quantum dots shows that the quantum dots are gradually separated out in the glass matrix; different PbBr2The emission and excitation spectra of the perovskite quantum dot glass obtained by concentration are shown in figure 2, and different PbBr2The attenuation spectrum of the perovskite quantum dot glass obtained by concentration is shown in figure 3, and it can be seen that when PbBr is used2When the concentration is 17 mol%, the photoluminescence efficiency reaches the highest value, and the nanosecond-level service life is monitored, which indicates that CsPbBr3The quantum dots are precipitated in the inorganic glass matrix.
Example 2: an efficient preparation method of all-inorganic perovskite quantum dot glass comprises the following specific steps:
(1) mixing high-purity B2O3、SiO2、ZnO、Cs2CO3、PbBr2NaBr and SrCO3Grinding to obtain mixed powder; wherein B is2O3、SiO2、SrCO3ZnO as glass matrix, Cs2CO3、PbBr2NaBr as microcrystalline material, in mole fraction, B in mixed powder2O332％、SiO 228％、ZnO10％、Cs2CO39％、SrCO34％、PbBr 217% and NaBr 4%;
(2) placing the mixed powder in the step (1) at 1150 ℃ in an air atmosphere for high-temperature melting for 20min, pouring the mixed powder onto a copper plate preheated to 350 ℃, and cooling and forming to obtain perovskite quantum dot glass;
(3) sequentially carrying out high-temperature stress relief treatment and optical polishing treatment on the perovskite quantum dot glass obtained in the step (2) to obtain the fully inorganic perovskite CsPbBr3The high-temperature stress relief treatment temperature of the quantum dot glass is 350 ℃, and the stress relief time is 7 h;
PbBr2the XRD pattern of the perovskite quantum dot glass obtained when the concentration is 17 mol% is shown in figure 4; it can be seen that the (110) (200) (211) (220) crystallographic planes of the cubic phase appear, indicating the appearance of CsPbBr3A nanocrystal; in addition, as can be seen from the temperature-changing spectrum in fig. 5, as the temperature rises, the full width at half maximum of the spectrum slightly increases, and the position of the emission peak is not changed, which indicates that the emission mainly comes from the direct recombination of excitons, and indirectly proves that the in-situ grown CsPbBr has the advantages of in-situ grown CsPbBr3The nanocrystal has good crystallinity.
Example 3: an efficient preparation method of all-inorganic perovskite quantum dot glass comprises the following specific steps:
(1) mixing high-purity B2O3、SiO2、ZnO、Cs2CO3、PbBr2NaBr and SrCO3Grinding to obtain mixed powder; wherein B is2O3、SiO2、SrCO3ZnO as glass matrix, Cs2CO3、PbBr2NaBr as microcrystalline material, in mole fraction, B in mixed powder2O332％、SiO 228％、ZnO10％、Cs2CO39％、SrCO34％、PbBr 217% and NaBr 4%;
(2) placing the mixed powder in the step (1) in an air atmosphere at 1250 ℃ for high-temperature melting for 14min, pouring the mixed powder onto a copper plate preheated to 400 ℃, and cooling and forming to obtain perovskite quantum dot glass;
(3) sequentially carrying out high-temperature stress relief treatment and optical polishing treatment on the perovskite quantum dot glass obtained in the step (2) to obtain the fully inorganic perovskite CsPbBr3The high-temperature stress relief treatment temperature is 360 ℃, and the stress relief time is 6 h;
(4) the all-inorganic perovskite CsPbBr obtained in the step (3)3The quantum dot glass is fully ground and is in contact with commercial CaAlSiN3:Eu2+Fully mixing the red fluorescent powder, and packaging the red fluorescent powder on an LED chip by using AB glue;
PbBr2CsPbBr obtained at a concentration of 17 mol%3Quantum dot glass and commercial CaAlSiN3:Eu2+The light spectrum of the red phosphor mixed under the excitation of the blue light chip is shown in fig. 6, and it can be seen that the red phosphor is in a warm white light region; fig. 7 shows the CIE coordinates of the LED device as (0.3829, 0.3365), which was calculated to have a color temperature of 3523K.
While the present invention has been described in detail with reference to the specific embodiments thereof, it will be apparent to one skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope thereof.
Claims (4)
1. A preparation method of high-efficiency all-inorganic perovskite quantum dot glass is characterized by comprising the following specific steps:
(1) mixing high-purity B2O3、SiO2、ZnO、SrCO3、Cs2CO3、PbBr2Grinding the mixture and NaBr to obtain mixed powder;
(2) placing the mixed powder in the step (1) in an air atmosphere at the temperature of 1150-1250 ℃ for high-temperature melting for 10-20 min, pouring, cooling and forming to obtain perovskite quantum dot glass;
(3) sequentially carrying out high-temperature stress relief treatment and optical polishing treatment on the perovskite quantum dot glass obtained in the step (2) to obtain the fully inorganic perovskite CsPbBr3Quantum dot glass.
2. The preparation method of the high-efficiency all-inorganic perovskite quantum dot glass according to claim 1, which is characterized in that: in terms of mole fraction, B in the mixed powder2O330～40％、SiO220～45％、ZnO 15～20％、SrCO32～4％、Cs2CO38～12％、PbBr25-21% and 6-9% of NaBr.
3. The preparation method of the high-efficiency all-inorganic perovskite quantum dot glass according to claim 1, which is characterized in that: the temperature of the high-temperature stress relief treatment in the step (3) is 350-380 ℃, and the stress relief time is 3-8 h.
4. The high-efficiency all-inorganic perovskite quantum dot glass prepared by the preparation method of any one of claims 1 to 3 is used for preparing LED device packaging materials.
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112759267A (en) * | 2021-02-04 | 2021-05-07 | 中国科学院福建物质结构研究所 | Perovskite nanocrystalline glass ceramic membrane laminated composite material |
| CN113224222A (en) * | 2021-05-08 | 2021-08-06 | 昆明理工大学 | Preparation method of LED plant lamp light-emitting chip |
| CN113912291A (en) * | 2021-09-13 | 2022-01-11 | 五邑大学 | All-inorganic perovskite quantum dot fluorescent glass and preparation method and application thereof |
| CN114133141A (en) * | 2021-12-28 | 2022-03-04 | 海南大学 | Perovskite quantum dot glass ceramic and preparation method thereof |
| CN114394753A (en) * | 2021-12-07 | 2022-04-26 | 华南农业大学 | High-luminescence quantum efficiency CsPbBr3Perovskite quantum dot glass and preparation method and application thereof |
| CN115784620A (en) * | 2022-12-27 | 2023-03-14 | 无锡极电光能科技有限公司 | Perovskite quantum dot glass and preparation method thereof |
| CN115849721A (en) * | 2022-12-09 | 2023-03-28 | 昆明理工大学 | Inorganic perovskite quantum dot glass and preparation method thereof |
| CN116282933A (en) * | 2023-03-22 | 2023-06-23 | 昆明理工大学 | Preparation method and application of high-transparency lead-based perovskite microcrystalline glass |
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