CN112037845A - Temperature change calculation method of three-dimensional stacked memory chip - Google Patents

Temperature change calculation method of three-dimensional stacked memory chip Download PDF

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CN112037845A
CN112037845A CN202010900741.0A CN202010900741A CN112037845A CN 112037845 A CN112037845 A CN 112037845A CN 202010900741 A CN202010900741 A CN 202010900741A CN 112037845 A CN112037845 A CN 112037845A
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temperature
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CN112037845B (en
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王毅
王先华
廖好
周池
毛睿
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Shenzhen University
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    • G—PHYSICS
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    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
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    • G01K13/10—Thermometers specially adapted for specific purposes for measuring temperature within piled or stacked materials
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Abstract

The invention discloses a temperature change calculation method of a three-dimensional stacked memory chip, which combines heat transfer science with the structure of the three-dimensional stacked memory chip, constructs a three-dimensional physical model according to the physical structure parameters of the memory chip, uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on the performance parameters of the memory chip and the ambient temperature, solving to obtain the temperature information of each node at the next moment as program simulation temperature, and regularly starting temperature measuring devices such as a temperature sensor/a thermal camera and the like to obtain accurate temperature information of the memory chip to correct the program simulation temperature, when more accurate temperature information is obtained, the working time of the temperature measuring device during the operation of the chip is greatly reduced, the power consumption of the whole storage system is reduced, the bandwidth occupation of the storage chip is reduced, and the service life of the temperature measuring device is prolonged.

Description

Temperature change calculation method of three-dimensional stacked memory chip
Technical Field
The invention relates to the technical field of temperature measurement, in particular to a temperature change calculation method of a three-dimensional stacked memory chip.
Background
With the development and application of new technologies such as cloud service, big data, artificial intelligence and the like, the market has higher requirements on indexes such as storage reliability, read-write performance, capacity and the like of a storage medium. With the development of technologies such as through silicon vias, memory chips span from two-dimensional architectures to three-dimensional architectures. Different from the traditional storage technology, the storage chip of the three-dimensional stacking structure has higher storage density and larger storage capacity, the storage bandwidth is improved by increasing the parallel width or utilizing serial transmission, the system storage control design difficulty is simplified to different degrees, and the three-dimensional stacking structure has the performance advantages of high integration level, high bandwidth, high energy efficiency and the like. Therefore, a large-capacity three-dimensional stacked memory chip occupies an increasingly important position in the storage market, but the three-dimensional stacked memory chip is very sensitive to temperature, and the radiation and movement of charges are accelerated by high temperature, so that the data error rate is greatly increased, and the reliability of the memory chip is reduced.
In order to reduce adverse effects of high temperature on three-dimensional stacked memory chips, various temperature information-based three-dimensional stacked memory chip stability optimization schemes are proposed in the prior art. The optimized schemes are to monitor the temperature information of the three-dimensional stacked memory chips through a temperature sensor or a thermal camera. The method for acquiring the temperature information has the following defects:
1. the temperature sensor or the thermal camera must always maintain an operation state and collect temperature information while the memory chip is operated, thus generating more power consumption;
2. chip temperature information acquired by a temperature sensor or a thermal camera needs to be continuously transmitted to a memory chip controller, so that a large amount of memory chip bandwidth is occupied;
3. the temperature sensor or the thermal camera has a shorter life than the memory chip, and is easily damaged in a long-term operation state, so that wrong temperature information is provided.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the defects of high power consumption, occupation of a large amount of memory chip bandwidth and low temperature measurement accuracy in the prior art when measuring the temperature of the three-dimensional stacked memory chip, thereby providing a method for calculating the temperature change of the three-dimensional stacked memory chip.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a method for calculating a temperature change of a three-dimensional stacked memory chip, including the following steps:
acquiring physical structure parameters, chip performance parameters and environmental temperature of a three-dimensional stacked memory chip to be calculated;
constructing a three-dimensional physical model according to the physical structure parameters;
uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and the environmental temperature, and solving to obtain temperature information of each node at the next moment as program simulation temperature; and repeating the steps during the operation of the memory chip, and periodically starting the temperature measuring device to measure the real-time temperature of the memory chip instead of the program simulation temperature for correcting the temperature field.
In one embodiment, the physical structure parameters include the number of physical blocks, the number of physical pages in each physical block, and the specification of physical pages;
the chip performance parameters include: the heat conductivity coefficient of the chip, the specific heat capacity of the chip, the density of the chip and the heat convection coefficient of the chip and air.
In one embodiment, the building a three-dimensional physical model according to the physical structure parameters includes:
according to the physical structure of the three-dimensional stacked memory chip, a three-dimensional Cartesian coordinate system is established, a physical page is used as a basic unit, the memory chip is divided into a plurality of nodes, and unique three-dimensional coordinates are distributed according to the spatial positions of the nodes.
In one embodiment, the method comprises the steps of uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and environmental temperature, and solving to obtain temperature information of each node at the next moment as program simulation temperature; repeating the above steps during the operation of the memory chip, and periodically starting the temperature measuring device to measure the real-time temperature of the memory chip instead of the program simulation temperature for correcting the temperature field, comprising:
step S01, obtaining initial temperature information of the memory chip through a temperature measuring device, and initializing a corrected counter Ct to zero;
step S02, judging whether the operation of reading/writing/erasing the memory chip occurs at the moment;
step S03, if operation occurs, updating temperature information according to the operation type of the chip and the target physical page node, and continuing to step S04; if no operation occurs, continue to step S04;
step S04, selecting part of nodes from the peripheral nodes of the target physical page node for calculating the temperature value at the next moment through a first preset rule;
step S05, the number of the selected nodes in each area divided by taking the target physical page node as the center is made to be uniform by adding and deleting the nodes to the selected nodes according to a second preset rule;
step S06, analyzing the heat conduction relations between all selected nodes and target nodes, solving corresponding heat conduction differential equations, solving the heat conduction differential equations by substituting chip performance parameters and the current environment temperature, and obtaining the target physical page node temperature value at the next moment as program simulation temperature;
step S07, accumulating the random integer value in the range of 1 to 3 in the counter Ct, and judging whether Ct is larger than the correction threshold N;
step S08, if the counter Ct is larger than N, the temperature measuring device is started to measure the real-time temperature information of the memory chip, the real-time temperature is used for correcting the temperature field instead of the program simulation temperature, Ct is set to zero,
step S09 is continued; if the counter Ct is less than N, continue to step S09;
step S09, judging whether the memory chip stops working; if the memory chip stops working, the operation is finished; if the memory chip does not stop operating, the process returns to step S02.
In one embodiment, physical page nodes around a target physical page node are classified into three types of nodes according to Euclidean distances between the physical page nodes and the coordinates of the target physical page node:
classifying nodes with Euclidean distances between coordinates and target node coordinates smaller than or equal to a first threshold value into first class nodes;
classifying nodes with Euclidean distances between coordinates and target node coordinates larger than a first threshold value and smaller than or equal to a second threshold value into second class nodes;
classifying the nodes with the Euclidean distance between the coordinates and the target node coordinates larger than a second threshold value into a third class of nodes;
selecting A% nodes from the first class of nodes, B% nodes from the second class of nodes, and C% nodes from the third class of nodes, wherein A, B, C satisfies A > aB, B > bC, and A + B + C < S, wherein a, B, and S are positive integers, and a < B < S.
In one embodiment, the process of selecting a part of nodes from its surrounding nodes by a first preset rule includes:
step S11: distributing a group of sequence numbers which are increased from 0 to all the nodes in each type of nodes according to the coordinate sequence;
step S12: assuming that M nodes are in total, randomly generating an integer random number in the range of 0 to M-1, and finding out a node with a sequence number corresponding to the random number;
step S13: judging whether the node is already in the selected node set or not;
step S14: if the node is already in the selected node set, returning to step S12;
step S15: if the node is not in the selected set, adding the node and a symmetrical node of the node with the target node as the center into the selected node set;
step S16: judging whether the number of the type nodes in the currently selected node set accounts for the proportion of the type nodes to reach the required selection percentage or not;
step S17: if the proportion of the number of the type of nodes in the selected node set to the type of nodes does not meet the requirement, returning to the step S12;
step S18: and if the number of the type of nodes in the selected node set accounts for the proportion of the type of nodes to meet the requirement, the type of nodes are selected.
In an embodiment, a process of making the number of selected nodes in each area divided by taking a target physical page node as a center uniform by adding nodes and deleting nodes to the selected nodes according to a second preset rule includes:
and cutting all nodes along the three directions of an x axis, a y axis and a z axis by taking a target node as a center, dividing other physical page nodes into 8 areas, counting the total number of the selected nodes as T, making T equal to T/8, and adding/deleting nodes to the selected node set according to the number of the selected nodes of the nodes in each area, so that the number of the nodes in the selected node set in all the areas is T.
In an embodiment, the process of performing node adding/deleting operation on the selected node set so that the number of the nodes in the selected node set in all the areas is t includes:
step S21, judging whether the number r of the selected nodes in the area is equal to t;
step S22, if the number of the selected nodes in the area is equal to t, the operation is ended;
step S23, if the selected node in the area is not equal to t, judging whether r is larger than t;
step S24, if r is smaller than t, adding t-r unselected nodes with the minimum Euclidean distance to the target node in the area into the selected node set, and finishing the operation;
and step S25, if r is larger than t, distributing the serial numbers increasing from 0 to the selected nodes in the area according to the coordinate size, then generating random numbers within the r-t serial number size range, deleting the nodes with the serial numbers corresponding to the random numbers in the selected node set, and finishing the operation.
In a second aspect, the present invention provides a computer-readable storage medium, where computer instructions are stored, where the computer instructions are configured to cause a computer to execute the method for calculating a temperature variation of a three-dimensional stacked memory chip according to the first aspect of the present invention.
In a third aspect, an embodiment of the present invention provides a computer device, including: the temperature variation calculation method of the three-dimensional stacked memory chip comprises a memory and a processor, wherein the memory and the processor are mutually connected in a communication mode, the memory stores computer instructions, and the processor executes the computer instructions so as to execute the temperature variation calculation method of the three-dimensional stacked memory chip in the first aspect of the embodiment of the invention.
The technical scheme of the invention has the following advantages:
the invention discloses a temperature change calculation method of a three-dimensional stacked memory chip, which combines heat transfer science with the structure of the three-dimensional stacked memory chip, constructs a three-dimensional physical model according to the physical structure parameters of the memory chip, uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and environmental temperature, solving to obtain temperature information of each node at the next moment as program simulation temperature, and regularly starting temperature measuring devices such as a temperature sensor/a thermal camera and the like to obtain accurate temperature information of the memory chip to correct the program simulation temperature, the working time of the temperature measuring device when the chip operates is greatly reduced while more accurate temperature information is obtained, therefore, the power consumption of the whole storage system is reduced, the bandwidth occupation of the storage chip is reduced, and the service life of the temperature measuring device is prolonged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart illustrating a specific example of a method for calculating a temperature variation of three-dimensional stacked memory chips according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an overall process for correcting a temperature field according to an embodiment of the present invention;
FIG. 3 is a flow chart of selecting a node in an embodiment of the present invention;
FIG. 4 is a flowchart of node selection at various nodes in the embodiment of the present invention;
FIG. 5 is a flow chart illustrating homogenization of selected nodes according to an embodiment of the present invention;
FIG. 6 is a flowchart illustrating operations of adding/deleting nodes to a selected node set according to an embodiment of the present invention;
fig. 7 is a block diagram of a specific example of a computer device according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The embodiment of the invention provides a method for calculating temperature change of a three-dimensional stacked memory chip, which can be applied to temperature change calculation of a large-capacity three-dimensional stacked memory chip (such as a high-bandwidth memory chip, an Intel ao teng SSD and other chips) in the aspects of a memory cluster, a data server, personal business storage and the like, and as shown in fig. 1, the method specifically comprises the following steps:
step S10: and acquiring physical structure parameters, chip performance parameters and environmental temperature of the three-dimensional stacked memory chip to be calculated.
The physical structure parameter in the embodiment of the invention comprises the number of physical blocks and the number of physical pages in each physical blockNumber, specification of physical page (surface area S, volume V); the chip performance parameters include: the heat conductivity coefficient lambda of the chip, the specific heat capacity c of the chip, the density rho of the chip and the heat convection coefficient h of the chip and air; the temperature of the environment where the chip is located is tf。
Step S20: and constructing a three-dimensional physical model according to the physical structure parameters.
In the embodiment of the invention, a three-dimensional Cartesian coordinate system is established according to the physical structure of the three-dimensional stacked memory chips, the physical page is taken as a basic unit, the memory chips are divided into a plurality of nodes, and unique three-dimensional coordinates such as (m, n, j) are distributed according to the space positions of the nodes.
Step S30: uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and the environmental temperature, and solving to obtain temperature information of each node at the next moment as program simulation temperature; and repeating the steps during the operation of the memory chip, and periodically starting the temperature measuring device to measure the real-time temperature of the memory chip instead of the program simulation temperature for correcting the temperature field.
Fig. 2 shows a whole process of correcting the temperature field of the memory chip, which includes the following steps:
step S01, obtaining initial temperature information of the memory chip through a temperature measuring device, and initializing a corrected counter Ct to zero;
step S02, judging whether the operation of reading/writing/erasing the memory chip occurs at the moment;
step S03, if operation occurs, updating temperature information according to the operation type of the chip and the target physical page node (for example, after a 32 ℃ physical page node is read, the temperature is updated to 37 ℃), and continuing step S04; if no operation occurs, continue to step S04;
step S04, selecting part of nodes from the peripheral nodes of the target physical page node for calculating the temperature value at the next moment through a first preset rule;
step S05, the number of the selected nodes in each area divided by taking the target physical page node as the center is made to be uniform by adding and deleting the nodes to the selected nodes according to a second preset rule;
step S06, analyzing the heat conduction relations between all the selected nodes and the target node, and obtaining the corresponding heat conduction differential equation (assuming that the target node is p and the selected surrounding nodes are p)1、p2、p3、…、pMThe temperature of the target node at time i is expressed as
Figure BDA0002659690680000091
The differential equation of heat conduction for the target node at the time i should be
Figure BDA0002659690680000101
Figure BDA0002659690680000102
Wherein distance is a function for calculating the Euclidean distance between two points of the input parameters), solving a heat conduction differential equation by substituting the chip performance parameters and the current environment temperature, and obtaining a target physical page node temperature value at the next moment as a program simulation temperature;
step S07, accumulating the random integer value in the range of 1 to 3 in the counter Ct, and judging whether Ct is larger than the correction threshold N (the value of N can be determined according to experience value or actual requirement, and is not limited herein);
step S08, if the counter Ct is larger than N, the temperature measuring device is started to measure the real-time temperature information of the memory chip (which can be a temperature sensor or a thermal camera), the real-time temperature is used for correcting the temperature field instead of the program simulation temperature, and the Ct is set to zero, then the step S09 is continued; if the counter Ct is less than N, continue to step S09;
step S09, judging whether the memory chip stops working; if the memory chip stops working, the operation is finished; if the memory chip does not stop operating, the process returns to step S02.
In the embodiment of the present invention, as for the flow chart of selecting nodes in step S04, as shown in fig. 3, first, the physical page nodes around the target physical page node are classified into three types of nodes according to the euclidean distances between the physical page nodes and the coordinates of the target physical page node:
1. classifying nodes with Euclidean distances between the coordinates and the coordinates of the target node less than or equal to a first threshold value into first class nodes, for example: classifying nodes with Euclidean distances between coordinates and target node coordinates less than or equal to 3 into first-class nodes;
2. classifying nodes with Euclidean distances between coordinates and target node coordinates larger than a first threshold value and smaller than or equal to a second threshold value into second class nodes; for example, the method comprises the following steps: classifying nodes with Euclidean distances between the coordinates and the target node coordinates larger than 3 and smaller than or equal to 5 into second-class nodes;
3. classifying the nodes with the Euclidean distance between the coordinates and the target node coordinates larger than a second threshold value into a third class of nodes; for example, the method comprises the following steps: and classifying the nodes with the Euclidean distance between the coordinates and the target node coordinates larger than 5 into a third class of nodes.
Selecting A% nodes from the first class of nodes, B% nodes from the second class of nodes, and C% nodes from the third class of nodes, wherein A, B, C satisfies A > aB, B > bC, and A + B + C < S, wherein a, B, and S are positive integers, and a < B < S. In one embodiment A, B, C satisfies A >2B, B >5C, A + B + C < 95.
It should be noted that, the values of the first threshold, the second threshold, a, B, C, a, B, and s may be values obtained by performing a plurality of tests and obtaining the most accurate test result, which is merely for illustration and not limited thereto.
In the embodiment of the present invention, a process of selecting nodes at various nodes is shown in fig. 4, and the specific steps include:
step S11: assigning a set of sequence numbers to all nodes in each class of nodes in a coordinate order (e.g., comparing x coordinates first, comparing y coordinates when x coordinates are equal, comparing z coordinates when x and y coordinates are equal, and assigning a set of sequence numbers that increases from 0 if (0, 0, 0) is greater than (0, 0, 1));
step S12: assuming that M nodes are in total, randomly generating an integer random number in the range of 0 to M-1, and finding out a node with a sequence number corresponding to the random number;
step S13: judging whether the node is already in the selected node set or not;
step S14: if the node is already in the selected node set, returning to step S12;
step S15: if the node is not in the selected set, adding the node and a symmetrical node of the node with the target node as the center into the selected node set;
step S16: judging whether the number of the type nodes in the currently selected node set accounts for the proportion of the type nodes to reach the required selection percentage (the first type nodes need to reach A% of the total number of the type nodes, the second type nodes need to reach B% of the total number of the type nodes, and the third type nodes need to reach C% of the total number of the type nodes);
step S17: if the proportion of the number of the type of nodes in the selected node set to the type of nodes does not meet the requirement, returning to the step S12;
step S18: and if the number of the type of nodes in the selected node set accounts for the proportion of the type of nodes to meet the requirement, the type of nodes are selected.
Fig. 5 is a flowchart illustrating the homogenization of the selected nodes in step S05, which is to make the selected nodes uniformly distributed, so that the target node temperature value at the next time obtained by the simulation calculation is more accurate. The method comprises the following specific steps:
taking a target node as a center, cutting all nodes along three directions of x, y and z axes, dividing other physical page nodes into 8 areas, counting the total number of selected nodes as T, making T equal to T/8, wherein T is the number of selected physical page nodes to be included after each area passes through an add-delete node, and performing add/delete node operation on a selected node set on nodes in each area according to the number of the selected nodes, so that the number of the selected node set in all the areas is T, and a specific flow of the add/delete node operation on the selected node set is shown in fig. 6 and comprises the following steps:
step S21, judging whether the number r of the selected nodes in the area is equal to t;
step S22, if the number of the selected nodes in the area is equal to t, the operation is ended;
step S23, if the selected node in the area is not equal to t, judging whether r is larger than t;
step S24, if r is smaller than t, adding t-r unselected nodes with the minimum Euclidean distance to the target node in the area into the selected node set, and finishing the operation;
and step S25, if r is larger than t, distributing the serial numbers increasing from 0 to the selected nodes in the area according to the coordinate size, then generating random numbers within the r-t serial number size range, deleting the nodes with the serial numbers corresponding to the random numbers in the selected node set, and finishing the operation.
The method for calculating the temperature change of the three-dimensional stacked memory chip provided by the embodiment of the invention combines the heat transfer science with the structure of the three-dimensional stacked memory chip, constructs a three-dimensional physical model according to the physical structure parameters of the memory chip, uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and environmental temperature, solving to obtain temperature information of each node at the next moment as program simulation temperature, and regularly starting temperature measuring devices such as a temperature sensor/a thermal camera and the like to obtain accurate temperature information of the memory chip to correct the program simulation temperature, the working time of the temperature measuring device when the chip operates is greatly reduced while more accurate temperature information is obtained, therefore, the power consumption of the whole storage system is reduced, the bandwidth occupation of the storage chip is reduced, and the service life of the temperature measuring device is prolonged.
Example 2
An embodiment of the present invention provides a computer device, as shown in fig. 7, the device may include a processor 51 and a memory 52, where the processor 51 and the memory 52 may be connected by a bus or in another manner, and fig. 7 takes the connection by the bus as an example.
The processor 51 may be a Central Processing Unit (CPU). The Processor 51 may also be other general purpose processors, Digital Signal Processors (DSPs), Application Specific Integrated Circuits (ASICs), Field Programmable Gate Arrays (FPGAs) or other Programmable logic devices, discrete Gate or transistor logic devices, discrete hardware components, or combinations thereof.
The memory 52, which is a non-transitory computer readable storage medium, may be used to store non-transitory software programs, non-transitory computer executable programs, and modules, such as the corresponding program instructions/modules in the embodiments of the present invention. The processor 51 executes various functional applications and data processing of the processor by running the non-transitory software programs, instructions and modules stored in the memory 52, that is, implements the temperature variation calculation method of the three-dimensional stacked memory chip in the above-described method embodiment 1.
The memory 52 may include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required for at least one function; the storage data area may store data created by the processor 51, and the like. Further, the memory 52 may include high speed random access memory, and may also include non-transitory memory, such as at least one magnetic disk storage device, flash memory device, or other non-transitory solid state storage device. In some embodiments, the memory 52 may optionally include memory located remotely from the processor 51, and these remote memories may be connected to the processor 51 via a network. Examples of such networks include, but are not limited to, the internet, intranets, mobile communication networks, and combinations thereof.
One or more modules are stored in the memory 52, and when executed by the processor 51, perform the temperature change calculation method of the three-dimensional stacked memory chip in embodiment 1.
The details of the computer device can be understood by referring to the corresponding related descriptions and effects in embodiment 1, and are not described herein again.
It will be understood by those skilled in the art that all or part of the processes of the methods of the embodiments described above can be implemented by a computer program that can be stored in a computer-readable storage medium and that when executed, can include the processes of the embodiments of the methods described above. The storage medium may be a magnetic Disk, an optical Disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a Flash Memory (Flash Memory), a Hard Disk (Hard Disk Drive, abbreviated as HDD) or a Solid State Drive (SSD), etc.; the storage medium may also comprise a combination of memories of the kind described above.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the spirit or scope of the invention.

Claims (10)

1. A method for calculating temperature variation of three-dimensional stacked memory chips is characterized by comprising the following steps:
acquiring physical structure parameters, chip performance parameters and environmental temperature of a three-dimensional stacked memory chip to be calculated;
constructing a three-dimensional physical model according to the physical structure parameters;
uniformly selecting surrounding nodes of each node in the three-dimensional physical model, establishing a heat conduction differential equation based on chip performance parameters and the environmental temperature, and solving to obtain temperature information of each node at the next moment as program simulation temperature; and repeating the steps during the operation of the memory chip, and periodically starting the temperature measuring device to measure the real-time temperature of the memory chip instead of the program simulation temperature for correcting the temperature field.
2. The method of calculating temperature variation of three-dimensional stacked memory chips according to claim 1,
the physical structure parameters comprise the number of physical blocks, the number of physical pages in each physical block and the specification of the physical pages;
the chip performance parameters include: the heat conductivity coefficient of the chip, the specific heat capacity of the chip, the density of the chip and the heat convection coefficient of the chip and air.
3. The method of claim 2, wherein the constructing a three-dimensional physical model according to the physical structure parameters comprises:
according to the physical structure of the three-dimensional stacked memory chip, a three-dimensional Cartesian coordinate system is established, a physical page is used as a basic unit, the memory chip is divided into a plurality of nodes, and unique three-dimensional coordinates are distributed according to the spatial positions of the nodes.
4. The method according to claim 3, wherein the surrounding nodes are uniformly selected for each node in the three-dimensional physical model, a heat conduction differential equation is established based on the chip performance parameters and the ambient temperature, and the temperature information of each node at the next moment is obtained by solving the heat conduction differential equation as the program simulation temperature; repeating the above steps during the operation of the memory chip, and periodically starting the temperature measuring device to measure the real-time temperature of the memory chip instead of the program simulation temperature for correcting the temperature field, comprising:
step S01, obtaining initial temperature information of the memory chip through a temperature measuring device, and initializing a corrected counter Ct to zero;
step S02, judging whether the operation of reading/writing/erasing the memory chip occurs at the moment;
step S03, if operation occurs, updating temperature information according to the operation type of the chip and the target physical page node, and continuing to step S04; if no operation occurs, continue to step S04;
step S04, selecting part of nodes from the peripheral nodes of the target physical page node for calculating the temperature value at the next moment through a first preset rule;
step S05, the number of the selected nodes in each area divided by taking the target physical page node as the center is made to be uniform by adding and deleting the nodes to the selected nodes according to a second preset rule;
step S06, analyzing the heat conduction relations between all selected nodes and target nodes, solving corresponding heat conduction differential equations, solving the heat conduction differential equations by substituting chip performance parameters and the current environment temperature, and obtaining the target physical page node temperature value at the next moment as program simulation temperature;
step S07, accumulating the random integer value in the range of 1 to 3 in the counter Ct, and judging whether Ct is larger than the correction threshold N;
step S08, if the Ct of the counter is larger than N, the temperature measuring device is started to measure the real-time temperature information of the storage chip, the real-time temperature is used for correcting the temperature field instead of the program simulation temperature, and the Ct is set to zero, and the step S09 is continued; if the counter Ct is less than N, continue to step S09;
step S09, judging whether the memory chip stops working; if the memory chip stops working, the operation is finished; if the memory chip does not stop operating, the process returns to step S02.
5. The method according to claim 4, wherein the physical page nodes around the target physical page node are classified into three types of nodes according to their Euclidean distances from the coordinates of the target physical page node:
classifying nodes with Euclidean distances between coordinates and target node coordinates smaller than or equal to a first threshold value into first class nodes;
classifying nodes with Euclidean distances between coordinates and target node coordinates larger than a first threshold value and smaller than or equal to a second threshold value into second class nodes;
classifying the nodes with the Euclidean distance between the coordinates and the target node coordinates larger than a second threshold value into a third class of nodes;
selecting A% nodes from the first class of nodes, B% nodes from the second class of nodes, and C% nodes from the third class of nodes, wherein A, B, C satisfies A > aB, B > bC, and A + B + C < S, wherein a, B, and S are positive integers, and a < B < S.
6. The method of claim 5, wherein the step of selecting a part of the nodes from the nodes around the part of the nodes by the first predetermined rule comprises:
step S11: distributing a group of sequence numbers which are increased from 0 to all the nodes in each type of nodes according to the coordinate sequence;
step S12: assuming that M nodes are in total, randomly generating an integer random number in the range of 0 to M-1, and finding out a node with a sequence number corresponding to the random number;
step S13: judging whether the node is already in the selected node set or not;
step S14: if the node is already in the selected node set, returning to step S12;
step S15: if the node is not in the selected set, adding the node and a symmetrical node of the node with the target node as the center into the selected node set;
step S16: judging whether the number of the type nodes in the currently selected node set accounts for the proportion of the type nodes to reach the required selection percentage or not;
step S17: if the proportion of the number of the type of nodes in the selected node set to the type of nodes does not meet the requirement, returning to the step S12;
step S18: and if the number of the type of nodes in the selected node set accounts for the proportion of the type of nodes to meet the requirement, the type of nodes are selected.
7. The method for calculating the temperature change of the three-dimensional stacked memory chip according to claim 4, wherein the step of making the number of the selected nodes in each area divided by centering on the target physical page node uniform by adding and deleting the nodes to the selected nodes according to a second preset rule comprises:
and cutting all nodes along the three directions of an x axis, a y axis and a z axis by taking a target node as a center, dividing other physical page nodes into 8 areas, counting the total number of the selected nodes as T, making T equal to T/8, and adding/deleting nodes to the selected node set according to the number of the selected nodes of the nodes in each area, so that the number of the nodes in the selected node set in all the areas is T.
8. The method according to claim 7, wherein the adding/deleting node operation on the selected node set to make the number of the selected node set in all the regions equal to t comprises:
step S21, judging whether the number r of the selected nodes in the area is equal to t;
step S22, if the number of the selected nodes in the area is equal to t, the operation is ended;
step S23, if the selected node in the area is not equal to t, judging whether r is larger than t;
step S24, if r is smaller than t, adding t-r unselected nodes with the minimum Euclidean distance to the target node in the area into the selected node set, and finishing the operation;
and step S25, if r is larger than t, distributing the serial numbers increasing from 0 to the selected nodes in the area according to the coordinate size, then generating random numbers within the r-t serial number size range, deleting the nodes with the serial numbers corresponding to the random numbers in the selected node set, and finishing the operation.
9. A computer-readable storage medium storing computer instructions for causing a computer to execute the method for calculating a temperature variation of three-dimensional stacked memory chips according to any one of claims 1 to 8.
10. A computer device, comprising: a memory and a processor, the memory and the processor being communicatively connected to each other, the memory storing computer instructions, and the processor executing the computer instructions to perform the method for calculating the temperature variation of the three-dimensional stacked memory chip according to any one of claims 1 to 8.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106650009A (en) * 2016-11-24 2017-05-10 中国电子科技集团公司第二十九研究所 Microprocessor rapid transient heat distribution estimation method
CN106919723A (en) * 2015-12-24 2017-07-04 中国科学院微电子研究所 The fuel factor assessment of three-dimensionally integrated resistance-variable storing device and the method for reducing hot crosstalk
CN109493912A (en) * 2018-11-12 2019-03-19 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） The Temperature Distribution test method of multilayer resistance-variable storing device
US20200159442A1 (en) * 2018-11-20 2020-05-21 Tdk Corporation Memory controller and flash memory system having the same
US20200159465A1 (en) * 2016-03-04 2020-05-21 Western Digital Technologies, Inc. Temperature Variation Compensation

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106919723A (en) * 2015-12-24 2017-07-04 中国科学院微电子研究所 The fuel factor assessment of three-dimensionally integrated resistance-variable storing device and the method for reducing hot crosstalk
US20200159465A1 (en) * 2016-03-04 2020-05-21 Western Digital Technologies, Inc. Temperature Variation Compensation
CN106650009A (en) * 2016-11-24 2017-05-10 中国电子科技集团公司第二十九研究所 Microprocessor rapid transient heat distribution estimation method
CN109493912A (en) * 2018-11-12 2019-03-19 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） The Temperature Distribution test method of multilayer resistance-variable storing device
US20200159442A1 (en) * 2018-11-20 2020-05-21 Tdk Corporation Memory controller and flash memory system having the same

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Record date: 20231116

Application publication date: 20201204

Assignee: Shenzhen Dongfang Huilian Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047336

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231116

Application publication date: 20201204

Assignee: Shenzhen Weigao Investment Development Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047270

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231116

Application publication date: 20201204

Assignee: Shenzhen Yunchuang Netcom Information Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047247

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231116

Application publication date: 20201204

Assignee: Shenzhen Youha Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047230

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231115

Application publication date: 20201204

Assignee: Guangdong Haipeng Cloud Intelligent Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047226

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231115

Application publication date: 20201204

Assignee: Shenzhen Boosted Goal Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047206

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231115

Application publication date: 20201204

Assignee: Shenzhen Suowei Information Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047180

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231115

Application publication date: 20201204

Assignee: SHENZHEN KSY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980046891

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231114

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: SHENZHEN NEOON INDUSTRIAL CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980047461

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231117

Application publication date: 20201204

Assignee: Shenzhen Xunming Trading Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047343

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231116

Application publication date: 20201204

Assignee: Shenzhen Haocai Digital Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047340

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231116

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Guangdong Guorui Zhongan Technology Group Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047976

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231122

Application publication date: 20201204

Assignee: Avidia (Shenzhen) Medical Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980047974

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231122

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: SHENZHEN LEPOWER OPTO ELECTRONICS Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048389

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: SHENZHEN DING TUO DA ELECTROMECHANICAL Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048382

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: Shenzhen Jiahui Education Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048376

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: Shenzhen Huihong Information Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048375

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: Shenzhen Guangwang Bozhan Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048373

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: SHENZHEN TONGYIFANG OPTOELECTRONIC TECHNOLOGY CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980048369

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: SHENZHEN DELIHE ENERGY TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048367

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: Guangdong Xinlian Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048065

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231123

Application publication date: 20201204

Assignee: SHENZHEN RED BANNER ELECTRICIAN TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048064

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231123

Application publication date: 20201204

Assignee: Shenzhen chuangyue Precision Machinery Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048053

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231123

Application publication date: 20201204

Assignee: Aixunda Technology (Shenzhen) Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048047

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231123

Application publication date: 20201204

Assignee: Shenzhen Xinsheng interconnected technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048035

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231123

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Guangzhou Mincheng Electronic Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049120

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231130

Application publication date: 20201204

Assignee: Shenzhen Gengyuan Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048763

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: SHENZHEN MIGOU NETWORK TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048687

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: SHENZHEN YANQIANLI TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048676

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: SHENZHEN SP MICROELECTRONICS CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980048667

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231128

Application publication date: 20201204

Assignee: Shenzhen Yuanchuan Intelligent Control Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048539

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Shenzhen Zhihui Computer Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048429

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Shenzhen Foresea Allchips Information & Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048420

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Foshan Youyijiao Medical Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048407

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Easy to sign chain (Shenzhen) Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048402

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Shenzhen Ruibotong Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048397

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: SHENZHEN LIHAI HONGJIN TECHNOLOGY CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980048392

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: SHENZHEN FENGRUNDA TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048338

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231127

Application publication date: 20201204

Assignee: Shenzhen Lingyu Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048332

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

Application publication date: 20201204

Assignee: Matrix Origin (Shenzhen) Information Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980048322

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231124

EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Songgang Amber Culture Media Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049536

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231201

Application publication date: 20201204

Assignee: Shenzhen liandaqi Precision Ceramics Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049493

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231201

Application publication date: 20201204

Assignee: SHENZHEN HUAXU SCIENCE AND TECHNOLOGY DEVELOPMENT Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049062

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231130

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Shenzhen Huike Energy Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050230

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

Application publication date: 20201204

Assignee: Shenzhen Huike Storage Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050228

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231205

Application publication date: 20201204

Assignee: Shenzhen Youyou Internet Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049890

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231204

Application publication date: 20201204

Assignee: Jindao Precision Technology (Shenzhen) Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980049875

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231204

Application publication date: 20201204

Assignee: Shenzhen Hengcheng Compliance Management Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050542

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

Application publication date: 20201204

Assignee: QIAOSI BIOLOGY (SHENZHEN) TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050535

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

Application publication date: 20201204

Assignee: Shenzhen Cloud Service Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050526

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

Application publication date: 20201204

Assignee: SHENZHEN SAIDIXING TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050522

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

Application publication date: 20201204

Assignee: JIUZHOU YANGGUANG POWER SUPPLY (SHENZHEN) CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980050235

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231206

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Shenzhen Aonuo Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980051124

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231208

Application publication date: 20201204

Assignee: SHENZHEN XINGHE HONGTAI AUTOMATION EQUIPMENT CO.,LTD.

Assignor: SHENZHEN University

Contract record no.: X2023980050492

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231208

Application publication date: 20201204

Assignee: Shenzhen Weijia communication intelligent Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980050477

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231208

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: SHENZHEN MAIYUE TECHNOLOGY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980051465

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231211

EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: SHENZHEN HUIKE PRECISION INDUSTRY Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980052469

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231214

Application publication date: 20201204

Assignee: Shenzhen Heshen Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980052463

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231214

Application publication date: 20201204

Assignee: Shenzhen Daya Electronic Materials Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980052224

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231213

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Youpushi Electronics (Shenzhen) Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2023980052810

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20231218

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: SHENZHEN GENERAL BARCODE'S TECHNOLOGY DEVELOPMENT CENTER

Assignor: SHENZHEN University

Contract record no.: X2024980000040

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20240103

Application publication date: 20201204

Assignee: Shenzhen Subangbo Intelligent Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2024980000038

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20240103

Application publication date: 20201204

Assignee: Shenzhen Deep Sea Blue Ocean Technology Service Center

Assignor: SHENZHEN University

Contract record no.: X2024980000036

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20240104

EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract
EE01 Entry into force of recordation of patent licensing contract

Application publication date: 20201204

Assignee: Huizhou meierton Electronic Technology Co.,Ltd.

Assignor: SHENZHEN University

Contract record no.: X2024980002446

Denomination of invention: A Temperature Change Calculation Method for 3D Stacked Storage Chips

Granted publication date: 20210817

License type: Common License

Record date: 20240304