CN112036110A - Simulation test method for instantaneous dose rate effect of module-level circuit - Google Patents
Simulation test method for instantaneous dose rate effect of module-level circuit Download PDFInfo
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Abstract
The invention relates to a simulation test method for instantaneous dose rate effect of a module-level circuit, which comprises the following steps of 1) establishing physical models of basic unit NMOS tubes and PMOS tubes aiming at a device-level circuit; 2) establishing an instantaneous photocurrent model; 3) obtaining an SPICE micro model for obtaining the instantaneous dose rate effect of the NMOS tube and the PMOS tube of the basic unit by connecting the instantaneous photocurrent model in parallel with each NMOS tube and each PMOS tube; 4) inputting a circuit configuration file and a circuit netlist file of a module-level circuit in SPICE simulation software, obtaining a module-level circuit connection model in SPICE, and substituting the SPICE micro model into the module-level circuit connection model to establish a module-level circuit instantaneous dose rate effect model; 5) simulating instantaneous dose rate effects generated by the module-level circuit under different dose rates for the module-level circuit instantaneous dose rate effect model obtained in the step 4), monitoring whether a module-level circuit instantaneous dose rate effect overturning threshold value is obtained, and if so, completing a simulation test; if not, adjusting the parameters until the instantaneous dosage rate overturning threshold value is obtained.
Description
Technical Field
The invention relates to a simulation test method for instantaneous dose rate effect of a module-level circuit, belonging to the technical field of simulation test of radiation effect of an integrated circuit.
Background
As a semiconductor process enters a nano process, the sensitive volume of a device is continuously reduced, the critical charge is continuously reduced due to the reduction of working voltage and device capacitance, and the parasitic effect is continuously increased, so that the response of a circuit to the instantaneous dose rate effect has the characteristic different from that of a large-size device circuit. The performance index of the integrated circuit is higher and higher, the scale is larger and larger, the circuit structure is more and more complex, the factors influencing the dose rate radiation effect are many and influence each other, and the instantaneous dose rate radiation can influence the integrated circuit to different degrees, thereby generating the problems of disturbance, turnover, latch locking, even burning and the like. Therefore, analysis of dose rate radiation response mechanisms generated by complex circuits is helpful for the reinforced design of integrated circuits.
Because the simulation means has limitation on the full three-dimensional simulation of the ultra-large scale integrated circuit, the basic strategy of the used TCAD simulation software is to divide the grid of the established full three-dimensional device and calculate the physical parameters in each grid, so that the precision is very high, and the method is an important means for researching the dose rate radiation effect. However, this method requires too high resource consumption, and is not practical for the simulation of all three-dimensional devices of module-level integrated circuits. Therefore, the method is very important for researching a new simulation method of the module-level circuit instantaneous dose rate effect.
Disclosure of Invention
The technical problem solved by the invention is as follows: the invention overcomes the defect of insufficient prediction capability of the existing module-level circuit instantaneous dose rate effect research, provides a module-level circuit instantaneous dose rate effect simulation test method, and improves the module-level circuit instantaneous dose rate effect analysis prediction capability.
The technical scheme of the invention is as follows: a simulation test method for instantaneous dose rate effect of a module-level circuit comprises the following steps:
1) establishing physical models of basic unit NMOS tubes and PMOS tubes aiming at a device level circuit;
2) establishing an instantaneous photocurrent model to describe the influence of photocurrent and secondary photocurrent on the device-level circuit under different pulse intensities and dose rates;
3) connecting the instantaneous photocurrent model obtained in the step 2) in parallel with each NMOS tube and each PMOS tube to obtain an SPICE micro model of the instantaneous dose rate effect of the NMOS tube and the PMOS tube which are basic units;
4) inputting a circuit configuration file and a circuit netlist file of a module-level circuit into SPICE simulation software, establishing a module-level circuit connection model in the SPICE simulation software, substituting the SPICE micro model into the module-level circuit connection model, and establishing a module-level circuit instantaneous dose rate effect model in the SPICE simulation software;
5) testing excitation and circuit working voltage parameters by a fixed circuit, simulating instantaneous dose rate effect generated by the module-level circuit under different dose rates for the module-level circuit instantaneous dose rate effect model obtained in the step 4), monitoring whether a module-level circuit instantaneous dose rate effect overturning threshold is obtained, and if so, completing simulation test; if not, executing 6);
the instantaneous dose rate overturning threshold value is the minimum dose rate value required by the module level circuit when the output of the module level circuit jumps 0- >1 or 1- >0, the module level circuit cannot be overturned when the value is smaller than the minimum dose rate value, and the module level circuit can be overturned when the value is larger than the minimum dose rate value;
6) and adjusting circuit test excitation and/or circuit working voltage parameters to continue executing the step 5) for simulation, and monitoring the instant dosage rate effect reaction condition of the module-level circuit until an instant dosage rate overturning threshold value is obtained.
Preferably, the established physical model is subjected to process alignment in the step 1), an electrical characteristic curve is obtained through iteration, if the curve and the electrical characteristic curves of NMOS tubes and PMOS tubes of basic units of the device-level circuit in SPICE simulation software meet preset consistent requirements, the currently established physical model is an accurate device-level circuit physical model, and if not, the physical model is re-established and the process alignment is carried out again until the requirements are met.
Preferably, the physical model of the device-level circuit is built in the TCAD software.
Preferably, the establishing of the transient photocurrent model in step 2) specifically includes:
21) determining junction depth of a junction region, electron-hole pair mobility, majority carrier concentration, hole life, doping concentration, channel length and width information according to a product structure and a process of a module-level circuit to be simulated;
22) calculating an instantaneous photocurrent source according to Poisson equation and minority carrier continuity equation theoretical formula theory by using the parameter information, and establishing an instantaneous photocurrent model related to node voltage bias;
23) adding the instantaneous photocurrent model obtained in the step 22) into the physical model obtained in the step 1) by using device-level simulation software TCAD, setting radiation dose rate and pulse width parameters, and performing device instantaneous dose rate effect simulation on the instantaneous photocurrent model to obtain the response condition of the instantaneous photocurrent inside the device under different radiation intensities, thereby obtaining the change condition of the sensitive parameters of the device under different radiation intensities;
24) and modifying and optimizing according to the device response condition in the step 23) to obtain an accurate instantaneous photocurrent model.
Preferably, in step 3), the instantaneous photocurrent model is connected in parallel to PN junctions of the NMOS transistor and the PMOS transistor, and then an SPICE micro model is established based on the variation of the device sensitive parameters under different instantaneous dose rate effects.
Preferably, the transient photocurrent model obtained in the step 2) is connected in parallel between the drain of the NMOS tube and the substrate;
and (3) connecting the transient photocurrent model obtained in the step 2) in parallel between the drain of the PMOS tube and the substrate, and additionally, adding the transient photocurrent model between the P substrate and the junction region of the N well.
Preferably, the simulation range 10 of the dose rate in the step 5)9-1012rad(Si)/s。
Compared with the prior art, the invention has the beneficial effects that:
the invention perfects the simulation flow of the instantaneous dose rate effect of the integrated circuit, provides a feasible simulation means of the instantaneous dose rate effect of the module-level circuit, establishes an accurate photocurrent model on the basis of the simulation of the device-level instantaneous dose rate effect, simultaneously constructs the module-level circuit model by using the electrical parameters obtained by the simulation of the device model, jointly carries out the simulation of the instantaneous dose rate effect and obtains the simulation result of the instantaneous dose rate overturning threshold. The method improves the analysis and estimation capability of the instantaneous dose rate effect of the module-level circuit.
The invention can realize the quick and automatic simulation of instantaneous dose rate fault injection of the module-level circuit;
the method can obtain a module-level circuit simulation model which is more in line with physical action and reality and aims at the dose rate radiation effect, and can complete the estimation of the performance of the module-level circuit for resisting the instantaneous dose rate effect;
the invention can obtain the turnover threshold value of the instantaneous dose rate effect of the module-level circuit and the simulation result of the sensitive node.
Drawings
FIG. 1 is a flow chart of the present invention.
Detailed Description
The invention is further illustrated by the following examples.
Referring to fig. 1, an embodiment of the present invention provides a simulation test method for instantaneous dose rate effect of a module-level circuit, including the following steps:
1) building physical models of basic units of an NMOS tube and a PMOS tube on a device-level circuit by using TCAD software;
specifically, the establishing of the physical model of the basic unit for the device-level circuit by using the TCAD software according to the embodiment of the present invention includes:
11) the method comprises the steps of setting device parameters and device dimensions by using an SDE tool, determining a graph drawing scheme, drawing a substrate region, defining grid oxidation and grid polycrystalline silicon, drawing Shallow Trench Isolation (STI), defining device contact and device doping, and performing three-dimensional modeling on a device-level circuit, wherein three-dimensional simulation is more accurate in simulating the electrical characteristics of the device and can completely reflect the real state of the device;
12) after a three-dimensional physical model of the device is obtained by using the SDE, a mesh tool is used for carrying out mesh division and mesh optimization on the device, and the method is mainly carried out aiming at areas with easily changed physical and electrical characteristics, such as the surface of the device, a PN junction area and the like;
13) and the SDEVICE completes the device simulation according to the grid optimized by the mesh tool, each model parameter set in the command file and the specified simulation start-stop time and boundary conditions.
Simulating the physical behaviors of optical, electrical and Radiation effects of the semiconductor device by setting a physical Model (a mobility Model, a forbidden band narrowing Model, a drift Model and a diffusion Model), potential information, a simulation step length and a Gamma Radiation Model by using an SDEVICE tool;
14) observing the device state and the electrical characteristics by using TECPLET and INSPECT tools; such as voltage and current characteristics, and can be refined to look at the hole current and electron current related physical quantities.
15) And performing process alignment, and iterating the established model to obtain a more accurate device-level circuit physical model with an electrical characteristic curve consistent with the electrical characteristic curves of NMOS and PMOS transistors of the basic unit of the device-level circuit in SPICE simulation software.
Because the process of the three-dimensional model depends on process information, but due to the problems of commercial confidentiality and the like, a process manufacturer cannot release key process information such as doping concentration and the like, and the process alignment must be carried out on the established three-dimensional device model in order to ensure that the electrical characteristics of the three-dimensional device model can well reflect the actual circuit condition.
2) Establishing an instantaneous photocurrent model;
specifically, the establishing of the transient photocurrent model in the embodiment of the present invention includes: a Gamma Radiation Model is required to be added into a physics module statement, and the physical parameters of carrier concentration, forbidden band/conduction band positions, electric fields and electric potentials reflecting the Radiation essence of the device are observed through a software self-contained tool. The established instantaneous photocurrent model can accurately describe the influence of photocurrent and secondary photocurrent on the semiconductor device under different pulse intensities and dose rates. The method comprises the following specific steps:
21) determining junction depth of a junction region, electron-hole pair mobility, majority carrier concentration, hole life, doping concentration, channel length and width information according to a product structure and a process of a module-level circuit to be simulated;
22) and calculating a transient light current source according to a Poisson equation and a minority carrier continuity equation theoretical formula by using the parameter information, and establishing a photocurrent pulse model related to node voltage bias.
23) By using device-level simulation software TCAD, adding the instantaneous photocurrent model obtained in the step 22) in the physical model obtained in the step 1), and setting the radiation dose rate and pulse width parameters, the instantaneous photocurrent model can be used for carrying out the instantaneous dose rate effect simulation of the device, so as to obtain the response condition of the instantaneous photocurrent in the device under different radiation intensities, and further obtain the variation condition of the sensitive parameters of the device under different radiation intensities;
24) and modifying and optimizing the response condition of the device in the step 23) to obtain an accurate instantaneous photocurrent model, wherein the instantaneous photocurrent source can accurately describe the influence of the photocurrent and the secondary photocurrent on the device in the semiconductor device under different pulse intensities and dose rates.
3) Obtaining an SPICE micro-model of the instantaneous dose rate effect of a basic unit NMOS tube and a PMOS tube;
specifically, the SPICE micro-model for obtaining the instantaneous dose rate effect of the NMOS transistor and the PMOS transistor described in the embodiment of the present invention includes: and connecting the instantaneous photocurrent model to a PN junction of an MOS (metal oxide semiconductor) tube in parallel, and establishing an instantaneous dose rate SPICE micro-model which can be embedded into a circuit netlist based on the variation condition of sensitive parameters of a device under different instantaneous dose rate effects.
Establishing a circuit micro model of a PMOS tube and an NMOS tube which are basic composition units, wherein PN junctions are arranged among a source body, a drain body, a well and a substrate of the MOS tube, each semiconductor junction area flows generated photocurrent, and instantaneous photocurrent models obtained in the step 2) need to be respectively connected in parallel to the PN junctions, so that instantaneous ionizing radiation SPICE micro models of the NMOS tube and the PMOS tube are obtained. The photocurrent of the source region generally conducts at most the source-substrate diode and circulating current near the node, and such photocurrent has no effect on the device response and is generally not added.
31) The circuit micro model of the NMOS tube is generally connected in parallel with the instantaneous photocurrent obtained in the step 2) between the drain of the NMOS tube and the substrate;
32) the circuit micro model of the PMOS tube is generally connected with the instantaneous photocurrent obtained in the step 2) in parallel between the drain of the PMOS tube and the substrate, and in addition, the instantaneous photocurrent needs to be added between a P substrate and an N well junction area, because the photocurrent generated at the P substrate and the N well junction area is the largest, the influence on the radiation response of the device is also the largest;
4) establishing a module-level circuit instantaneous dose rate effect model in SPICE simulation software;
specifically, the establishing of the module-level circuit instantaneous dose rate effect simulation model in the SPICE simulation software in the embodiment of the invention includes: the SPICE micro-model of the transient dose rate effect of the elementary cell is substituted into the module-level circuit connection model.
41) Establishing a module-level circuit connection model;
establishing a netlist file describing a module-level circuit in SPICE simulation software, inputting a circuit configuration file and a circuit netlist file of a target circuit, establishing a module-level circuit connection model, considering different factors such as circuit driving states, circuit loads and the like to realize interconnection of various circuit elements in the module-level circuit, and setting related electrical parameters of each circuit element;
42) performing circuit basic signal test on the circuit element model;
the circuit basic signal test comprises the following steps: testing circuit function and electrical parameters; the electrical parameters include: current of the circuit element, voltage of the circuit element, and load capacity of the circuit element;
43) establishing module-level circuit instantaneous dose rate effect simulation model
Substituting the SPICE micro-model of the instantaneous dose rate effect of the NMOS tube and the PMOS tube of the basic unit obtained in the step 3) into a module-level circuit connection model, and establishing a module-level circuit instantaneous dose rate effect simulation model in SPICE simulation software;
5) carrying out module-level circuit instantaneous dosage rate effect simulation, and monitoring the module-level circuit instantaneous dosage rate effect reaction condition;
and (3) fixing circuit test excitation and circuit working voltage parameters by using the module-level circuit instantaneous dose rate effect model established in the step 4) in SPICE simulation software, and simulating the generated instantaneous dose rate effect by setting different instantaneous dose rates to obtain the simulation results of the instantaneous photocurrent waveform, the circuit output and the instantaneous dose rate soft error threshold value generated by the module-level circuit under the irradiation of the instantaneous dose rate. If yes, finish, if not execute 6).
6) And (3) adjusting parameters of circuit test excitation (pulse width of instantaneous photocurrent) or circuit node working voltage (increasing or decreasing) to continue to execute the step 5) for simulation, and monitoring the instantaneous dose rate effect reaction condition of the module-level circuit until an overturning threshold value of the instantaneous dose rate effect is obtained.
Examples
The embodiment provides a simulation method research of instantaneous dose rate effect of a trigger module circuit, which comprises the following steps:
step 1: selecting a typical trigger module-level circuit, developing device physical model establishment of basic unit PMOS tube and NMOS tube according to the method provided by the invention, obtaining the change of current waveform and voltage along with time and the change of corresponding internal carriers, and obtaining electrical parameters; and the process alignment is carried out with the electrical characteristic curves of the NMOS tube and the PMOS tube of the basic unit of the device-level circuit in the SPICE, so as to obtain a consistent and accurate device-level circuit physical model.
Step 2: determining junction depth of a junction region, electron-hole pair mobility, majority carrier concentration, hole lifetime, doping concentration, channel length and width information according to a product structure and a process of a trigger circuit; theoretically calculating an instantaneous photocurrent source by using the parameter information, and establishing an instantaneous photocurrent model related to node voltage bias;
and step 3: connecting the instantaneous photocurrent model to the PN junction of the MOS tube in parallel, and simulating the response of the NMOS tube and the PMOS tube to different instantaneous dose rates by using a TCAD (ternary content addressable memory), thereby obtaining a circuit simulation SPICE micro model which is more in line with physical action and actual radiation effect aiming at the dose rates;
and 4, step 4: inputting a circuit configuration file and a circuit netlist file of a trigger in SPICE simulation software to obtain a connection model of a trigger circuit, substituting the SPICE micro model into the connection model of the trigger circuit, and establishing an instantaneous dose rate effect model of the trigger circuit in the SPICE simulation software;
and 5: testing excitation and circuit working voltage parameters by the fixed circuit, simulating the instantaneous dose rate effect generated by the trigger under different dose rates for the instantaneous dose rate effect model of the trigger circuit obtained in the step 4), monitoring whether an instantaneous dose rate effect overturning threshold of the trigger circuit is obtained, and if so, completing the simulation test; if not, executing step 6;
step 6: and (3) adjusting the parameters of the test excitation of the trigger circuit and/or the working voltage of the circuit node, continuing to execute the step (5) for simulation, and monitoring the instant dosage rate effect reaction condition of the trigger circuit until an instant dosage rate turnover threshold value is obtained.
The invention relates to instantaneous dose rate effect simulation software based on a module-level circuit, which is characterized in that on the basis of device-level instantaneous dose rate effect simulation, a circuit physical model of a PMOS (P-channel metal oxide semiconductor) tube and an NMOS (N-channel metal oxide semiconductor) tube which are basically formed into a unit is established, an accurate instantaneous photocurrent model is established, an instantaneous dose rate effect micro model of the basic unit is obtained by connecting the instantaneous photocurrent models in parallel on a PN (positive-negative) junction, the micro model is substituted into a module-level circuit connection model to obtain a module-level circuit instantaneous dose rate effect model, instantaneous dose rate effect simulation is carried out to complete the estimation of the performance of the module-level circuit for resisting the instantaneous dose rate effect, and the. The invention can realize the quick and automatic simulation of the instantaneous dosage rate fault injection of the module-level circuit, and obtain a module-level circuit simulation model which is more in line with physical action and actual dosage rate radiation effect.
Those skilled in the art will appreciate that the details of the invention not described in detail in the specification are within the skill of those skilled in the art.
Claims (7)
1. A simulation test method for instantaneous dose rate effect of a module-level circuit is characterized by comprising the following steps:
1) establishing physical models of basic unit NMOS tubes and PMOS tubes aiming at a device level circuit;
2) establishing an instantaneous photocurrent model to describe the influence of photocurrent and secondary photocurrent on the device-level circuit under different pulse intensities and dose rates;
3) connecting the instantaneous photocurrent model obtained in the step 2) in parallel with each NMOS tube and each PMOS tube to obtain an SPICE micro model of the instantaneous dose rate effect of the NMOS tube and the PMOS tube which are basic units;
4) inputting a circuit configuration file and a circuit netlist file of a module-level circuit into SPICE simulation software, establishing a module-level circuit connection model in the SPICE simulation software, substituting the SPICE micro model into the module-level circuit connection model, and establishing a module-level circuit instantaneous dose rate effect model in the SPICE simulation software;
5) testing excitation and circuit working voltage parameters by a fixed circuit, simulating instantaneous dose rate effect generated by the module-level circuit under different dose rates for the module-level circuit instantaneous dose rate effect model obtained in the step 4), monitoring whether a module-level circuit instantaneous dose rate effect overturning threshold is obtained, and if so, completing simulation test; if not, executing 6);
the instantaneous dose rate overturning threshold value is the minimum dose rate value required by the module level circuit when the output of the module level circuit jumps 0- >1 or 1- >0, the module level circuit cannot be overturned when the value is smaller than the minimum dose rate value, and the module level circuit can be overturned when the value is larger than the minimum dose rate value;
6) and adjusting circuit test excitation and/or circuit working voltage parameters to continue executing the step 5) for simulation, and monitoring the instant dosage rate effect reaction condition of the module-level circuit until an instant dosage rate overturning threshold value is obtained.
2. The method as claimed in claim 1, wherein the step 1) of performing process alignment on the established physical model, obtaining an electrical characteristic curve through iteration, if the curve and the electrical characteristic curves of the NMOS transistor and the PMOS transistor of the basic unit of the device-level circuit in SPICE simulation software meet preset consistency requirements, the currently established physical model is an accurate physical model of the device-level circuit, otherwise, re-establishing the physical model and performing process alignment again until the requirements are met.
3. The method as claimed in claim 1 or 2, wherein the physical model of the device-level circuit is built in TCAD software.
4. The method as claimed in claim 1, wherein the step 2) of establishing the instantaneous photocurrent model comprises:
21) determining junction depth of a junction region, electron-hole pair mobility, majority carrier concentration, hole life, doping concentration, channel length and width information according to a product structure and a process of a module-level circuit to be simulated;
22) calculating an instantaneous photocurrent source according to Poisson equation and minority carrier continuity equation theoretical formula theory by using the parameter information, and establishing an instantaneous photocurrent model related to node voltage bias;
23) adding the instantaneous photocurrent model obtained in the step 22) into the physical model obtained in the step 1) by using device-level simulation software TCAD, setting radiation dose rate and pulse width parameters, and performing device instantaneous dose rate effect simulation on the instantaneous photocurrent model to obtain the response condition of the instantaneous photocurrent inside the device under different radiation intensities, thereby obtaining the change condition of the sensitive parameters of the device under different radiation intensities;
24) and modifying and optimizing according to the device response condition in the step 23) to obtain an accurate instantaneous photocurrent model.
5. The method as claimed in claim 1, wherein in step 3), the transient photocurrent model is connected in parallel to the PN junction of the NMOS transistor and the PMOS transistor, and then an SPICE micro model is built based on the variation of the device sensitive parameters under different transient dose rate effects.
6. The method as claimed in claim 1 or 5, wherein the module level circuit testing method for instantaneous dose rate effect simulation is,
connecting the instantaneous photocurrent model obtained in the step 2) in parallel between the drain of the NMOS tube and the substrate;
and (3) connecting the transient photocurrent model obtained in the step 2) in parallel between the drain of the PMOS tube and the substrate, and additionally, adding the transient photocurrent model between the P substrate and the junction region of the N well.
7. The method as claimed in claim 1, wherein the simulation range of dose rate 10 in step 5) is a simulation range of dose rate9-1012rad(Si)/s。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030688A (en) * | 2021-03-09 | 2021-06-25 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090044158A1 (en) * | 2007-04-13 | 2009-02-12 | Klas Olof Lilja | Method, and extensions, to couple substrate effects and compact model circuit simulation for efficient simulation of semiconductor devices and circuit |
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
| CN110991072A (en) * | 2019-12-13 | 2020-04-10 | 西安电子科技大学 | SRAM single-particle transient effect simulation analysis method and system |
| CN111008514A (en) * | 2019-10-28 | 2020-04-14 | 北京时代民芯科技有限公司 | Simulation test method for anti-radiation reinforced module-level circuit |
| CN111027279A (en) * | 2019-12-13 | 2020-04-17 | 西安电子科技大学 | Hybrid simulation analysis method for system-level single event effect |
-
2020
- 2020-08-31 CN CN202010899992.1A patent/CN112036110B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090044158A1 (en) * | 2007-04-13 | 2009-02-12 | Klas Olof Lilja | Method, and extensions, to couple substrate effects and compact model circuit simulation for efficient simulation of semiconductor devices and circuit |
| CN103577643A (en) * | 2013-11-06 | 2014-02-12 | 中国空间技术研究院 | SRAM type FPGA single event upset effect simulation method |
| CN111008514A (en) * | 2019-10-28 | 2020-04-14 | 北京时代民芯科技有限公司 | Simulation test method for anti-radiation reinforced module-level circuit |
| CN110991072A (en) * | 2019-12-13 | 2020-04-10 | 西安电子科技大学 | SRAM single-particle transient effect simulation analysis method and system |
| CN111027279A (en) * | 2019-12-13 | 2020-04-17 | 西安电子科技大学 | Hybrid simulation analysis method for system-level single event effect |
Non-Patent Citations (1)
| Title |
|---|
| 杜川华;周开明;熊涔;: "宽剂量率范围的集成电路瞬时电离辐射效应模拟方法研究", 核电子学与探测技术, no. 07 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113030688A (en) * | 2021-03-09 | 2021-06-25 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
| CN113030688B (en) * | 2021-03-09 | 2021-10-08 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
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