CN112028033B - Device and method for purifying selenium through crystallization - Google Patents

Device and method for purifying selenium through crystallization Download PDF

Info

Publication number
CN112028033B
CN112028033B CN202010877357.3A CN202010877357A CN112028033B CN 112028033 B CN112028033 B CN 112028033B CN 202010877357 A CN202010877357 A CN 202010877357A CN 112028033 B CN112028033 B CN 112028033B
Authority
CN
China
Prior art keywords
heating
crystallization reactor
selenium
vertical crystallization
vertical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010877357.3A
Other languages
Chinese (zh)
Other versions
CN112028033A (en
Inventor
徐宝强
查国正
杨斌
蒋文龙
黄大鑫
罗欢
刘大春
李一夫
田阳
杨佳
王飞
熊恒
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunming University of Science and Technology
Original Assignee
Kunming University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunming University of Science and Technology filed Critical Kunming University of Science and Technology
Priority to CN202010877357.3A priority Critical patent/CN112028033B/en
Publication of CN112028033A publication Critical patent/CN112028033A/en
Application granted granted Critical
Publication of CN112028033B publication Critical patent/CN112028033B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00Selenium; Tellurium; Compounds thereof
    • C01B19/02Elemental selenium or tellurium
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00Production of homogeneous polycrystalline material with defined structure
    • C30B28/04Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/08Production of homogeneous polycrystalline material with defined structure from liquids by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

The invention relates to the technical field of selenium purification, in particular to a device and a method for purifying selenium through crystallization. The device comprises a power regulating system 1, a heating system 4, a vertical crystallization reactor 5 and a temperature measuring system 7; the power regulating system 1 is connected with the heating system 4 through a lead 2; the heating system 4 is fixed in the midair through a support frame 3; the heating area of the heating system 4 is a hollow annular structure; the temperature measuring end of the temperature measuring system 7 is positioned in the heating area; the vertical crystallization reactor 5 can move up and down in the heating area of the heating system 4 through a positioning and adjusting system 6; porous filter materials are placed in the vertical crystallization reactor 5. Compared with the traditional zone melting method, the method has the advantages of shortened production period and better purification effect.

Description

Device and method for purifying selenium through crystallization
Technical Field
The invention relates to the technical field of selenium purification, in particular to a device and a method for purifying selenium through crystallization.
Background
Selenium (Se) is a metal with important strategic significance in the high-tech field, is an essential trace element in organisms, and has an average abundance of about 0.05ppm in the crust. In recent years, selenium has been the focus of much scientific research in the fields of semiconductor materials and human health due to its unique semiconductor and anticancer properties.
The selenium produced in industry is a primary product, and can be purified by further refining to obtain pure selenium meeting the preparation requirements of related materials. At present, the selenium purification methods published at home and abroad mainly comprise a crude selenium redox method and H2Se thermal decomposition method, ion exchange method, zone melting method, vacuum distillation method, etc., wherein the zone melting method is widely used for purification of selenium due to its simple process. The traditional zone melting method adopts a horizontal placement mode, has obvious effect of removing impurity Cu, but for impurities such as Si, Zn, Fe, Na, Al and the like, because the distribution coefficient of the impurities and Se is close to 1, the impurities cannot be deeply removed (Su C H, Sha Y G]Journal of crystal growth 1998,187(3-4): 569-.
Disclosure of Invention
The invention aims to provide a device and a method for purifying selenium by crystallization, which can effectively remove impurities such as Si, Zn, Cu, Fe, Na, Al and the like, shorten the production period and have better purification effect compared with the traditional zone melting method.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a device for purifying selenium by crystallization, which comprises a power regulating system 1, a heating system 4, a vertical crystallization reactor 5 and a temperature measuring system 7;
the power regulating system 1 is connected with the heating system 4 through a lead 2;
the heating system 4 is fixed in the midair through a support frame 3; the heating area of the heating system 4 is a hollow annular structure;
the temperature measuring end of the temperature measuring system 7 is positioned in the heating area;
the vertical crystallization reactor 5 can move up and down in the heating area of the heating system 4 through a positioning and adjusting system 6;
porous filter materials are placed in the vertical crystallization reactor 5.
Preferably, the height of the heating area of the heating system 4 is 1-5 cm, and the diameter is 2-6 cm.
Preferably, the outer diameter of the vertical crystallization reactor 5 is smaller than the diameter of the heating zone; the length of the vertical crystallization reactor 5 is 20-60 cm.
Preferably, the positioning and adjusting system 6 comprises a supporting device and an automatic lifting device; the automatic lifting device is fixedly connected with the vertical crystallization reactor 5 and drives the vertical crystallization reactor 5 to move up and down by moving up and down on the supporting device.
Preferably, the pore diameter of the porous filtering material is 0.01-0.1 mm.
Preferably, the density of the porous filtering material is 5-6 g/cm3
Preferably, the heating system 4 is heated by using a resistance wire or an induction coil.
The invention provides a method for purifying selenium by crystallization based on the device in the scheme, which comprises the following steps: placing a selenium material to be purified in a vertical crystallization reactor 5, then placing a porous filtering material on the selenium material to be purified, adjusting a power adjusting system 1 to enable a heating system 4 to be heated to a purification temperature, and after a temperature system 7 to be detected determines that the purification temperature is stable, placing the vertical crystallization reactor 5 filled with the selenium material and the porous filtering material in a heating area of the heating system 4; the vertical crystallization reactor 5 is driven by the positioning and adjusting system 6 to move from bottom to top, so that the top to the bottom of the vertical crystallization reactor 5 sequentially passes through the heating regions.
Preferably, the mass content of Se in the selenium material to be purified is more than 92 percent.
Preferably, the moving speed of the vertical crystallization reactor 5 is 1-10 mm/min.
The invention provides a device for purifying selenium by crystallization, which comprises a power regulating system 1, a heating system 4, a vertical crystallization reactor 5 and a temperature measuring system 7; the power regulating system 1 is connected with the heating system 4 through a lead 2; the heating system 4 is fixed in the midair through a support frame 3; the heating area of the heating system 4 is a hollow annular structure; the temperature measuring end of the temperature measuring system 7 is positioned in the heating area; the vertical crystallization reactor 5 can move up and down in the heating area of the heating system 4 through a positioning and adjusting system 6; porous filter materials are placed in the vertical crystallization reactor 5.
Compared with the traditional zone melting, the invention sets the crystallization reactor as a vertical crystallization reactor, belongs to the vertical zone melting, and places porous filtering materials in the vertical crystallization reactor 5, when in use, selenium materials to be purified are placed in the vertical crystallization reactor 5, then the porous filtering materials are placed on the selenium materials, the positioning adjusting system 6 is utilized to drive the top to the bottom of the vertical crystallization reactor 5 to pass through a heating zone in sequence, the selenium materials are melted in the heating zone, and cooling crystallization is carried out after leaving the heating zone, on one hand, the impurity removal is realized by utilizing the principle of zone melting and the difference of the solubility of the impurities between solid and liquid; on the other hand, the impurity sedimentation is realized in the melting zone by utilizing the fact that the specific gravity of some impurities is larger than that of selenium, and the impurities are concentrated at the bottom of the crystallization reactor along with the gradual downward movement of the melting zone. Meanwhile, as the selenium melt moves downwards from top to bottom in sequence, the porous filtering material moves downwards along with the melt under the action of self gravity, so that light large-particle impurities with specific gravity smaller than that of the selenium melt can be prevented from floating upwards, the separation effect of the impurities is further improved, and the impurities such as Si, Zn, Cu, Fe, Na, Al and the like are effectively removed. Compared with the traditional horizontal zone smelting, the device has better separation effect, can reduce the up-and-down movement times and shorten the production period.
Drawings
FIG. 1 is a schematic structural diagram of an apparatus for purifying selenium by crystallization according to the present invention;
wherein, the device comprises a power adjusting system 1, a lead 2, a support frame 3, a heating system 4, a vertical crystallization reactor 5, a positioning adjusting system 6 and a temperature measuring system 7.
Detailed Description
As shown in FIG. 1, the invention provides a device for purifying selenium by crystallization, which comprises a power regulating system 1, a heating system 4, a vertical crystallization reactor 5 and a temperature measuring system 7;
the power regulating system 1 is connected with the heating system 4 through a lead 2;
the heating system 4 is fixed in the midair through a support frame 3; the heating area of the heating system 4 is a hollow annular structure;
the temperature measuring end of the temperature measuring system 7 is positioned in the heating area;
the vertical crystallization reactor 5 can move up and down in the heating area of the heating system 4 through a positioning and adjusting system 6;
porous filter materials are placed in the vertical crystallization reactor 5.
The device for purifying selenium by crystallization provided by the invention comprises a power regulating system 1, wherein the power regulating system 1 is used for regulating the heating temperature of a heating system 4. The present invention has no special requirements for the structure of the power conditioning system 1, and any power conditioning system capable of adjusting the heating temperature is well known in the art.
The device for purifying selenium by crystallization provided by the invention comprises a heating system 4. In the present invention, the heating system 4 is connected to the power conditioning system 1 via a line 2. In the present invention, the heating system 4 is used for heating the vertical crystallization reactor 5 to perform zone melting.
In the present invention, the heating system 4 is fixed in the mid-air by the support frame 3. The specific position of the heating system 4 is not particularly limited in the invention, and the requirement that the bottom of the vertical crystallization reactor 5 does not contact any object when the vertical crystallization reactor moves up and down in the heating area can be met.
In the present invention, the heating zone of the heating system 4 has a hollow ring-shaped structure. In the invention, the height of the heating area of the heating system 4 is preferably 1-5 cm, and more preferably 2-4 cm; the diameter is preferably 2-6 cm, and more preferably 3-5 cm.
In the present invention, the heating system 4 is preferably heated by using a resistance wire or an induction coil.
The device for purifying selenium by crystallization provided by the invention comprises a vertical crystallization reactor 5, wherein the vertical crystallization reactor 5 can move up and down in a heating area of a heating system 4 through a positioning and adjusting system 6. In the invention, the vertical crystallization reactor 5 is used for containing selenium materials to be purified and providing a reaction place for zone melting.
In the present invention, the vertical crystallization reactor 5 is preferably tubular, the outer diameter of the vertical crystallization reactor 5 is preferably smaller than the diameter of the heating zone, and the length of the vertical crystallization reactor 5 is preferably 20 to 60cm, and more preferably 30 to 50 cm. The invention controls the outer diameter of the vertical crystallization reactor 5 to be smaller than the diameter of the heating area, can avoid the vertical crystallization reactor 5 from contacting with the heating area, and ensures that the vertical crystallization reactor 5 is heated uniformly. In the present invention, the material of the vertical crystallization reactor 5 is preferably a material resistant to a high temperature of 800 ℃, and may be, but not limited to, graphite or quartz.
As an embodiment of the present invention, the positioning adjustment system 6 includes a supporting device and an automatic lifting device; the automatic lifting device is fixedly connected with the vertical crystallization reactor 5 and drives the vertical crystallization reactor 5 to move up and down by moving up and down on the supporting device. The supporting device and the automatic lifting device are not limited in any way, and the functions can be achieved.
In the invention, a porous filtering material is placed in the vertical crystallization reactor 5, and the aperture of the porous filtering material is preferably 0.01-0.1 mm, and more preferably 0.04-0.08 mm. In the present invention, the porous filter material is preferably circular, and the diameter is preferably 0.5cm smaller than the inner diameter of the vertical crystallization reactor 5. The invention controls the aperture of the porous filter material in the range, on one hand, the selenium melt can be allowed to pass through, and on the other hand, the light large particle impurities in the selenium melt can be prevented from floating upwards, so that the light large particle impurities and the particles with larger specific weight are concentrated at the bottom of the vertical crystallization reactor 5.
The device for purifying selenium by crystallization provided by the invention comprises a temperature measuring system 7, wherein a temperature measuring end of the temperature measuring system 7 is positioned in a heating area and is used for measuring the temperature of the heating area. In the present invention, the temperature measuring end of the temperature measuring system 7 is preferably not in contact with the heating area. The temperature measuring system 7 is not limited in any way, and any temperature measuring system with a temperature measuring function known in the art may be used, and may be specifically, but not limited to, a thermocouple.
The invention provides a method for purifying selenium by crystallization based on the device in the scheme, which comprises the following steps: placing the selenium material to be purified in a vertical crystallization reactor 5, then placing a porous filtering material on the selenium material to be purified, adjusting a power adjusting system 1 to enable a heating system 4 to be heated to a purification temperature, and after a temperature system 7 to be detected determines that the purification temperature is stable, placing the vertical crystallization reactor 5 filled with the selenium material and the porous filtering material in a heating area of the heating system 4; the vertical crystallization reactor 5 is driven by the positioning and adjusting system 6 to move from bottom to top, so that the top to the bottom of the vertical crystallization reactor 5 sequentially passes through the heating regions.
In the invention, the mass content of Se in the selenium material to be purified is preferably more than 92%, and the selenium material to be purified is preferably powder or block.
In the invention, the purification temperature is preferably 260-300 ℃, and the purification temperature is controlled in the range, so that the selenium can be ensured to be molten, and the selenium has lower viscosity and better fluidity.
In the present invention, the moving speed of the vertical crystallization reactor 5 is preferably 1 to 10mm/min, and more preferably 3 to 8 mm/min. The invention controls the moving speed of the vertical crystallization reactor 5 within the range, can ensure better impurity removal effect and has lower energy consumption.
In the process that the top part and the bottom part of the vertical crystallization reactor 5 sequentially pass through the heating region, selenium materials in the vertical crystallization reactor 5 are melted when reaching the heating region, cooled and crystallized after leaving the heating region, and the impurity is removed by utilizing the solubility difference of the impurities between solid and liquid; on the other hand, after the selenium material is melted in the heating area, the impurity is settled in the melting area by utilizing the difference of the specific gravity of the impurity and the selenium, and the impurity is gradually enriched to the bottom of the crystallization reactor along with the gradual downward movement of the melting area; meanwhile, as the selenium melt moves downwards from top to bottom in sequence, the porous material moves downwards along with the melt under the action of self gravity, so that the floating of light large-particle impurities with the specific gravity smaller than that of the selenium melt can be avoided, the separation effect of the impurities is further improved, the effective removal of impurities such as Si, Zn, Cu, Fe, Na, Al and the like is realized, and finally the porous material is settled to the bottom of the vertical crystallization reactor 5.
The invention has no special requirement on the number of times of the vertical crystallization reactor 5 moving from bottom to top, and can be set according to the impurity removal effect. When the number of the downward movement times of the vertical crystallization reactor 5 is increased, the purity of the finally obtained selenium is increased.
In the process of the invention, when the vertical crystallization reactor 5 moves from bottom to top repeatedly, the porous material is always positioned at the bottom of the vertical crystallization reactor 5.
The apparatus and method for purifying selenium by crystallization provided by the present invention will be described in detail with reference to the following examples, which should not be construed as limiting the scope of the present invention.
Example 1
The adopted device is shown in figure 1, and the selenium material is purified by the following specific steps: the selenium material to be purified (Se99.1%) was placed in a vertical crystallization reactor 5 (diameter 1.6cm, height 30cm), on which a porous filter material (diameter 1.1cm, pore diameter 0.02mm, density 5.5 g/cm) was placed3) Heating system 4 (heating area diameter is 2.0cm, height is 1.0cm) is heated to 250 ℃ by adjusting power adjusting system 1, the moving speed of automatic lifting device in positioning adjusting system 6 is set to be 0.5mm/min, automatic lifting device drives vertical crystallization reactor 5 to move from bottom to top, the top to bottom of vertical crystallization reactor 5 sequentially passes through the heating area, selenium material is melted in the heating area, and after melting, porousThe material moves downwards along with the melt, when the melt leaves the heating area, the melt is cooled and crystallized, the process of moving the vertical crystallization reactor 5 from bottom to top is repeated for 5 times, and the purity of the selenium after the reaction is finished is 99.98%.
Example 2
The adopted device is shown in figure 1, and the selenium material is purified by the following specific steps: the selenium material to be purified (Se98.2%) was placed in a vertical crystallization reactor 5 (diameter 2.5cm, height 50cm), on which a porous filter material (diameter 2.0cm, pore diameter 0.07mm, density 5.7 g/cm) was placed3) The temperature of a heating system 4 (the diameter of a heating area is 3.0cm, the height of the heating area is 2.0cm) is increased to 260 ℃ by adjusting a power adjusting system 1, the moving speed of an automatic lifting device in a positioning adjusting system 6 is set to be 1mm/min, the automatic lifting device drives a vertical crystallization reactor 5 to move from bottom to top, so that the top to the bottom of the vertical crystallization reactor 5 sequentially passes through the heating area, selenium materials are melted in the heating area, the melted porous materials move downwards along with a melt, the melt is cooled and crystallized after leaving the heating area, the moving process of the vertical crystallization reactor 5 from bottom to top is repeated for 5 times, and the purity of the selenium after the reaction is 99.95%.
Example 3
The adopted device is shown in figure 1, and the selenium material is purified by the following specific steps: the selenium material to be purified (Se99.92%) was placed in a vertical crystallization reactor 5 (diameter 3.5cm, height 60cm), and a porous filter material (diameter 3cm, pore diameter 0.01mm, density 5.1 g/cm) was placed on the selenium material3) The temperature of a heating system 4 (the diameter of a heating area is 5cm, the height of the heating area is 4cm) is increased to 260 ℃ by adjusting a power adjusting system 1, the moving speed of an automatic lifting device in a positioning adjusting system 6 is set to be 1mm/min, the automatic lifting device drives a vertical crystallization reactor 5 to move from bottom to top, the top to the bottom of the vertical crystallization reactor 5 sequentially passes through the heating area, a selenium material is melted in the heating area, a melted porous material moves downwards along with a melt, the melt is cooled and crystallized after leaving the heating area, the moving process of the vertical crystallization reactor 5 from bottom to top is repeated for 5 times, and the purity of the selenium after the reaction is 99.995%.
Comparative examples 1 to 3
The difference from the examples 1 to 3 is that the vertical zone melting is changed into the horizontal zone melting, a horizontal crystallization reactor is used, a porous filtering material is not used, and the rest conditions are the same as those of the examples 1 to 3, and the result shows that the purity of the crude selenium raw material obtained by 20 times of horizontal zone melting in the example 1 is 99.8%; the purity of the crude selenium raw material obtained by 20 horizontal zone smelts in the embodiment 2 is 99.1%; the purity of the crude selenium raw material in example 3 after 20 horizontal zone smelts was 99.93%.
Comparative example 4
The difference from example 1 is that no porous filter material was used and the purity of selenium after the reaction was 99.91%.
As can be seen from the above examples and comparative examples, the purification device and method of the present invention can purify selenium materials, compared with the traditional horizontal zone melting, the device of the present invention has better separation effect, and can reduce the times of up-down movement and shorten the production period.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.

Claims (7)

1. A method for purifying selenium by crystallization, comprising the steps of: placing the selenium material to be purified in a vertical crystallization reactor (5), then placing a porous filtering material on the selenium material to be purified, adjusting a power adjusting system (1) to enable a heating system (4) to be heated to a purification temperature, and after a temperature system (7) to be detected determines that the purification temperature is stable, placing the vertical crystallization reactor (5) filled with the selenium material and the porous filtering material in a heating area of the heating system (4); the vertical crystallization reactor (5) is driven to move from bottom to top by the positioning and adjusting system (6), so that the top to the bottom of the vertical crystallization reactor (5) sequentially passes through the heating region;
the moving speed of the vertical crystallization reactor (5) is 1-10 mm/min;
the purification temperature is 260-300 ℃;
the device for crystallizing and purifying selenium comprises a power regulating system (1), a heating system (4), a vertical crystallization reactor (5) and a temperature measuring system (7);
the power regulating system (1) is connected with the heating system (4) through a lead (2);
the heating system (4) is fixed in the mid-air through a support frame (3); the heating area of the heating system (4) is a hollow annular structure;
the temperature measuring end of the temperature measuring system (7) is positioned in the heating area;
the vertical crystallization reactor (5) can move up and down in a heating area of the heating system (4) through a positioning and adjusting system (6);
a porous filtering material is placed in the vertical crystallization reactor (5); the aperture of the porous filtering material is 0.01-0.1 mm; the density of the porous filtering material is 5-6 g/cm3
2. The method according to claim 1, wherein the selenium material to be purified has a Se content of > 92% by mass.
3. An apparatus for use in a method for the crystalline purification of selenium as claimed in claim 1 or 2, comprising a power regulation system (1), a heating system (4), a vertical crystallization reactor (5) and a temperature measurement system (7);
the power regulating system (1) is connected with the heating system (4) through a lead (2);
the heating system (4) is fixed in the midair through a support frame (3); the heating area of the heating system (4) is a hollow annular structure;
the temperature measuring end of the temperature measuring system (7) is positioned in the heating area;
the vertical crystallization reactor (5) can move up and down in a heating area of the heating system (4) through a positioning and adjusting system (6);
the vertical crystallization reactor (5)A porous filter material is placed in the porous filter material; the aperture of the porous filtering material is 0.01-0.1 mm; the density of the porous filtering material is 5-6 g/cm3
4. The device according to claim 3, characterized in that the heating zone of the heating system (4) has a height of 1-5 cm and a diameter of 2-6 cm.
5. The apparatus according to claim 3 or 4, characterized in that the vertical crystallization reactor (5) has an outer diameter smaller than the diameter of the heating zone; the length of the vertical crystallization reactor (5) is 20-60 cm.
6. The device according to claim 3, characterized in that said positioning adjustment system (6) comprises a support device and an automatic lifting device; the automatic lifting device is fixedly connected with the vertical crystallization reactor (5) and drives the vertical crystallization reactor (5) to move up and down by moving up and down on the supporting device.
7. The device according to claim 3, characterized in that the heating system (4) uses resistance wire heating or induction coil heating.
CN202010877357.3A 2020-08-27 2020-08-27 Device and method for purifying selenium through crystallization Active CN112028033B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010877357.3A CN112028033B (en) 2020-08-27 2020-08-27 Device and method for purifying selenium through crystallization

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010877357.3A CN112028033B (en) 2020-08-27 2020-08-27 Device and method for purifying selenium through crystallization

Publications (2)

Publication Number Publication Date
CN112028033A CN112028033A (en) 2020-12-04
CN112028033B true CN112028033B (en) 2022-06-14

Family

ID=73580160

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010877357.3A Active CN112028033B (en) 2020-08-27 2020-08-27 Device and method for purifying selenium through crystallization

Country Status (1)

Country Link
CN (1) CN112028033B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114180536A (en) * 2022-01-05 2022-03-15 昆明理工大学 Crude selenium slag purification device and method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238544A1 (en) * 1972-08-04 1974-02-21 Inst De Proiectari Si Cercetar Purifying selenium via the oxide - by converting the impure selenium to the oxide and treating the oxide in an absorption column with water
CN103183322A (en) * 2011-12-28 2013-07-03 广东先导稀材股份有限公司 Preparation method of high purity tellurium
TWM466112U (en) * 2012-11-30 2013-11-21 Univ Nat Cheng Kung A novel zone-melting device for recovery of rare metals
CN203359999U (en) * 2013-05-14 2013-12-25 安徽省思达新材料科技有限公司 Automatic mover for high-purity selenium zone melting
CN206680185U (en) * 2017-04-18 2017-11-28 昆明鼎邦科技股份有限公司 A kind of impure selenium slag wet feed vacuum smelting equipment
CN108950228A (en) * 2018-07-25 2018-12-07 沈阳金纳新材料股份有限公司 Vacuum reaction intensity method of refining and its preparing the application in nickel based and iron based alloy
CN111039265A (en) * 2020-01-07 2020-04-21 昆明理工大学 Preparation method of high-purity selenium
CN111270308A (en) * 2020-03-16 2020-06-12 华厦半导体(深圳)有限公司 Device and method for preparing high-purity gallium

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2238544A1 (en) * 1972-08-04 1974-02-21 Inst De Proiectari Si Cercetar Purifying selenium via the oxide - by converting the impure selenium to the oxide and treating the oxide in an absorption column with water
CN103183322A (en) * 2011-12-28 2013-07-03 广东先导稀材股份有限公司 Preparation method of high purity tellurium
TWM466112U (en) * 2012-11-30 2013-11-21 Univ Nat Cheng Kung A novel zone-melting device for recovery of rare metals
CN203359999U (en) * 2013-05-14 2013-12-25 安徽省思达新材料科技有限公司 Automatic mover for high-purity selenium zone melting
CN206680185U (en) * 2017-04-18 2017-11-28 昆明鼎邦科技股份有限公司 A kind of impure selenium slag wet feed vacuum smelting equipment
CN108950228A (en) * 2018-07-25 2018-12-07 沈阳金纳新材料股份有限公司 Vacuum reaction intensity method of refining and its preparing the application in nickel based and iron based alloy
CN111039265A (en) * 2020-01-07 2020-04-21 昆明理工大学 Preparation method of high-purity selenium
CN111270308A (en) * 2020-03-16 2020-06-12 华厦半导体(深圳)有限公司 Device and method for preparing high-purity gallium

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
铜冶炼硒渣"密闭熔炼-真空蒸馏精炼"法产业化实践;赵群等;《云南冶金》;20191225;第48卷(第6期);第43-48页 *

Also Published As

Publication number Publication date
CN112028033A (en) 2020-12-04

Similar Documents

Publication Publication Date Title
CN101913636B (en) Method for producing high-purity high-density alumina block material for sapphire single crystals
CN101585536B (en) Device and method for purifying solar energy level polysilicon
EP2743359A1 (en) Method for purifying high-purity aluminium by directional solidification and smelting furnace therefor
US3012865A (en) Silicon purification process
TWI399465B (en) Method of manufacturing silicon single crystal, apparatus for pulling silicon single crystal and vitreous silica crucible
CN102464319A (en) Metallurgical chemical purification method of silicon
CN112028033B (en) Device and method for purifying selenium through crystallization
CN101824650B (en) Purifying system of high purity polysilicon and purifying method
CN104085893A (en) Silicon purifying device and method employing Al-Si alloy melt through continuous casting
JPH0476925B2 (en)
CN107557854A (en) A kind of method that high-purity bulk crystals silicon is grown using the controllable metaplasia of silicon alloy
WO2023178955A1 (en) Manufacturing method for high-quality quartz crucible
CN110819823A (en) Method for preparing high-purity aluminum and prepared 5N high-purity aluminum
CN102432020A (en) Manufacturing method of solar grade polysilicon
CN102398905A (en) Method and equipment for refining silicon and obtained silicon crystal
CN115142130A (en) Method and device for growing flaky gallium oxide crystal by micro pull-down zone melting method
CN106947873A (en) A kind of method for removing impurity lead in thick bismuth alloy
JPH0450734B2 (en)
CN108179284B (en) Method and device for continuously and efficiently preparing high-purity aluminum
DE3611950A1 (en) Process for separating off solid reaction products, such as carbon, from carbothermically produced silicon
CN103072999B (en) Method and device for removing metal impurities in polycrystalline silicon by directional solidification
JP2636929B2 (en) Method for producing bismuth germanate single crystal
JP3659693B2 (en) Method for producing lithium borate single crystal
CN112357894A (en) Crude tellurium crystallization purification method
CN115196656B (en) CsBr purifying method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant