CN111999790A - Double-pass filter and camera assembly - Google Patents
Double-pass filter and camera assembly Download PDFInfo
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- CN111999790A CN111999790A CN202010861630.3A CN202010861630A CN111999790A CN 111999790 A CN111999790 A CN 111999790A CN 202010861630 A CN202010861630 A CN 202010861630A CN 111999790 A CN111999790 A CN 111999790A
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- 238000010521 absorption reaction Methods 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 27
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000049 pigment Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 3
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 3
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- AZCUJQOIQYJWQJ-UHFFFAOYSA-N oxygen(2-) titanium(4+) trihydrate Chemical compound [O-2].[O-2].[Ti+4].O.O.O AZCUJQOIQYJWQJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 17
- 239000003086 colorant Substances 0.000 abstract description 3
- 238000002834 transmittance Methods 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 5
- 238000000411 transmission spectrum Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/281—Interference filters designed for the infrared light
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/22—Absorbing filters
- G02B5/223—Absorbing filters containing organic substances, e.g. dyes, inks or pigments
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/28—Interference filters
- G02B5/285—Interference filters comprising deposited thin solid films
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B11/00—Filters or other obturators specially adapted for photographic purposes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Filters (AREA)
- Optical Elements Other Than Lenses (AREA)
- Blocking Light For Cameras (AREA)
Abstract
The invention discloses a double-pass optical filter and a camera component, wherein the double-pass optical filter comprises a transparent substrate, an absorption layer, an anti-reflection layer and an optical filter layer, the absorption layer and the optical filter layer are respectively arranged at two opposite sides of the transparent substrate, the anti-reflection layer covers the absorption layer, the anti-reflection layer and the optical filter layer are respectively formed by a plurality of odd number medium sub-layers and even number medium sub-layers which are alternately stacked, the refractive index of the odd number medium sub-layers is higher than that of the even number medium sub-layers, so when the incident angle of infrared light with the wavelength of 800 nm-850 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass optical filter is not more than 10 nm; and when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5nm, so that ghost images formed by multiple reflections among image sensors can be eliminated, and the problem of uneven brightness between the colors of the center and the corners of a picture is solved.
Description
Technical Field
The invention relates to the field of optical devices, in particular to a double-pass optical filter and a camera assembly.
Background
The double-pass optical filter has high peak transmittance and deeper cut-off, thereby effectively inhibiting halo and temperature drift, and is widely applied to notebook computers, security monitoring, digital cameras, digital telescopes, license plate recognition cameras, iris recognition systems and the like.
For security monitoring and license plate recognition cameras, the equipment is in a fixed state after being installed, but because a shot object randomly enters a shooting visual field range, an incident angle formed between a light source emitted by a shot object and a filter in a lens of the camera can be changed, and the central cutoff wavelength of a passband of a conventional double-pass filter can be greatly shifted (the shift amount is more than 20nm) along with the change of the incident angle. For this problem, the passband of the conventional double-pass filter is usually set to be relatively wide so as to receive light within a desired incident angle range, however, if the passband is too wide, the infrared light and the designed intercepted wavelength band cannot be cut off, so that stray light enters the lens to affect imaging, and the signal-to-noise ratio of the camera is reduced.
Disclosure of Invention
The present invention is directed to at least one of the technical problems of the prior art, and provides a dual-pass filter and a camera assembly capable of improving the signal-to-noise ratio.
A double pass filter according to an embodiment of the first aspect of the present invention includes a transparent substrate; the absorption layer is covered on one surface of the transparent matrix; the filter layer is arranged on the other surface of the transparent substrate; the anti-reflection layer is arranged on the surface of the absorption layer far away from the transparent substrate; the antireflection layer and the filter layer respectively comprise a plurality of odd-numbered medium sub-layers and even-numbered medium sub-layers which are alternately stacked, and the refractive index of the odd-numbered medium sub-layers is higher than that of the even-numbered medium sub-layers.
When the incident angle of infrared light with the wavelength of 800 nm-850 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 10 nm; when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5 nm.
The double-pass filter according to the embodiment of the invention at least has the following beneficial effects: the double-pass optical filter comprises a transparent substrate, an absorption layer, an anti-reflection layer and an optical filter layer, wherein the absorption layer and the optical filter layer are respectively arranged on two opposite sides of the transparent substrate, and the anti-reflection layer covers the absorption layer, wherein the anti-reflection layer and the optical filter layer are respectively formed by a plurality of odd number medium sub-layers and even number medium sub-layers which are alternately stacked, the refractive index of the odd number medium sub-layers is higher than that of the even number medium sub-layers, so that when the incident angle of infrared light with the wavelength of 800 nm-850 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass optical filter is not more than; and when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5nm, so that ghost images formed by multiple reflections among image sensors can be eliminated, the problem of uneven brightness between the colors of the center and the corners of a picture is solved, and the imaging quality is improved.
According to some embodiments of the invention, the material of the odd-numbered dielectric sublayer comprises at least one of trititanium pentoxide, titanium dioxide, zirconium dioxide, tantalum pentoxide and lanthanum titanate, and the material of the even-numbered dielectric sublayer is silicon dioxide or magnesium fluoride.
According to some embodiments of the invention, the total number of layers of the odd and even dielectric sublayers making up the antireflective layer is from 4 to 12.
According to some embodiments of the invention, the thickness of the odd-numbered dielectric sublayer constituting the anti-reflective layer is 5nm to 60nm, and the thickness of the even-numbered dielectric sublayer constituting the anti-reflective layer is 10nm to 150 nm.
According to some embodiments of the invention, a total number of layers of the odd and even dielectric sublayers making up the filter layer is 30 to 70.
According to some embodiments of the invention a thickness of the odd-numbered dielectric sublayer constituting the filter layer is in a range of 10nm to 150nm and a thickness of the even-numbered dielectric sublayer constituting the filter layer is in a range of 10nm to 450 nm.
According to some embodiments of the invention, the material of the absorbing layer is a pigment.
According to some embodiments of the invention, the thickness of the absorption layer is 0.30 μm to 3.0 μm.
According to some embodiments of the invention, the transparent substrate has a thickness of 0.03mm to 2 mm.
A camera assembly according to an embodiment of the second aspect of the invention comprises a double pass filter according to an embodiment of the first aspect of the invention.
According to the camera assembly of the embodiment of the second aspect of the invention, the imaging effect is improved by configuring the double-pass filter of the embodiment of the first aspect of the invention.
Drawings
The invention will be further described with reference to the accompanying drawings in which:
FIG. 1 is a schematic view of a structure of a double pass filter according to an embodiment of the present invention;
FIG. 2 is a graph of a transmittance spectrum of an absorbing layer of a double pass filter according to an embodiment of the present invention;
FIG. 3 is a graph of transmission spectra of a conventional double pass filter at incident angles of 0 and 30;
FIG. 4 is a transmission spectrum at incident angles of 0 and 30 for a double pass filter according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the present preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to like elements throughout.
In the description of the present invention, it should be understood that the orientation or positional relationship referred to in the description of the orientation, such as the upper, lower, front, rear, left, right, etc., is based on the orientation or positional relationship shown in the drawings, and is only for convenience of description and simplification of description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, the meaning of a plurality of means is one or more, the meaning of a plurality of means is two or more, and larger, smaller, larger, etc. are understood as excluding the number, and larger, smaller, inner, etc. are understood as including the number. Even and odd numbers, if any, are described for the purpose of distinguishing between technical features and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated or implicitly indicating the precedence of technical features indicated.
In the description of the present invention, unless otherwise explicitly limited, terms such as arrangement, installation, connection and the like should be understood in a broad sense, and those skilled in the art can reasonably determine the specific meanings of the above terms in the present invention in combination with the specific contents of the technical solutions.
Referring to fig. 1 to 4, a dual pass filter according to an embodiment of the invention includes a transparent substrate 1, an absorption layer 2, an anti-reflection layer 4, and a filter layer 3. The absorption layer 2 is covered on one side of the transparent substrate 1, the filter layer 3 is arranged on the other side of the transparent substrate 1, and the antireflection layer 4 is arranged on the surface of the absorption layer 2 far away from the transparent substrate 1. The antireflection layer 4, the absorption layer 2, the transparent substrate 1 and the filter layer 3 are sequentially stacked from top to bottom with the side of the antireflection layer 4 as the upper side. It will be appreciated that in other embodiments the positions of the filter layer 3 and the anti-reflection layer 4 may be interchanged, i.e. the absorber layer 2 is still applied on one side of the transparent substrate 1, but the filter layer 3 is provided on the surface of the absorber layer 2 remote from the transparent substrate 1 and the anti-reflection layer 4 is provided on the other side of the transparent substrate 1.
Specifically, the antireflection layer 4 and the filter layer 3 respectively include a plurality of odd-numbered dielectric sublayers and even-numbered dielectric sublayers alternately stacked, and the refractive index of the odd-numbered dielectric sublayers is higher than that of the even-numbered dielectric sublayers.
When the incident angle of infrared light with the wavelength of 800 nm-850 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 10 nm; when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5 nm.
The double-pass optical filter comprises a transparent substrate 1, an absorption layer 2, an anti-reflection layer 4 and a filter layer 3, wherein the absorption layer 2 and the filter layer 3 are respectively arranged at two opposite sides of the transparent substrate 1, and the anti-reflection layer 4 covers the absorption layer 2, wherein the anti-reflection layer 4 and the filter layer 3 are respectively formed by a plurality of odd medium sub-layers and even medium sub-layers which are alternately stacked, and the refractive index of the odd medium sub-layers is higher than that of the even medium sub-layers, so that when the incident angle of infrared light with the wavelength of 800-850 nm is 0-30 degrees, the central cut-off wavelength offset of the double-pass optical filter is not more than 10nm, and the signal-to-noise ratio is greatly improved; and when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5nm, so that ghost images formed by multiple reflections among image sensors can be eliminated, the problem of uneven brightness between the colors of the center and the corners of a picture is solved, and the imaging quality is improved.
For the double-pass filter of the embodiment of the invention, the odd-numbered medium sub-layer is a high-refractive-index layer, and the constituent material of the odd-numbered medium sub-layer comprises at least one of trititanium pentoxide, titanium dioxide, zirconium dioxide, tantalum pentoxide and lanthanum titanate (H4); and the even-numbered dielectric sublayers are low refractive index layers and the constituent material is silicon dioxide or magnesium fluoride.
Furthermore, in the embodiment of the present invention, the total number of layers of the odd-numbered dielectric sublayer and the even-numbered dielectric sublayer constituting the antireflection layer 4 ranges from 4 layers to 12 layers; meanwhile, the total number of layers of the odd-numbered dielectric sublayer and the even-numbered dielectric sublayer constituting filter layer 3 is 30 to 70.
In this embodiment, the material of the odd-numbered sub-dielectric layers is trititanium pentoxide, and the material of the even-numbered sub-dielectric layers is silicon dioxide. Each odd-numbered sub-medium layer is formed by deposition of trititanium pentoxide, and each even-numbered sub-medium layer is formed by oxidation of titanium dioxideSilicon is deposited. When preparing the antireflection layer 4 and the filter layer 3, the method of ion-assisted deposition by electron beam evaporation is adopted, the thickness of the layer is controlled by an extreme method, and the odd-numbered medium sub-layers and the even-numbered medium sub-layers are alternately deposited, and the vacuum degree during deposition is controlled to be 1.0x10 during preparation-2～1.2x10-2pa, and controlling the deposition rate of the titanium pentoxide to be less than 4A/S and the deposition rate of the silicon dioxide to be less than 12A/S.
More specifically, the total number of the anti-reflection layer 4 is 10, and the odd-numbered dielectric sub-layers and the even-numbered dielectric sub-layers are alternately stacked, each of which is 5, and further, the thickness of the odd-numbered dielectric sub-layer constituting the anti-reflection layer 4 is 5nm to 60nm, and the thickness of the even-numbered dielectric sub-layer constituting the anti-reflection layer 4 is 10nm to 150nm, and the thicknesses of the respective layers of the anti-reflection layer 4 of this embodiment are shown in table 1. Meanwhile, the total number of layers of the filter layer 3 is 44, odd-numbered dielectric sublayers and even-numbered dielectric sublayers are alternately stacked, each number being 22, and at the same time, the thickness of the odd-numbered dielectric sublayer constituting the filter layer 3 is in the range of 10nm to 150nm, and the thickness of the even-numbered dielectric sublayer constituting the filter layer 3 is in the range of 10nm to 450nm, and the thicknesses of the layers of the filter layer 3 of this embodiment are shown in table 2.
Table 1: thickness table of each layer of antireflection layer 4 of the double pass filter of the present invention
Table 2: thickness table of each layer of filter layer 3 of two-way filter of the present invention
In this embodiment, the material of the absorption layer 2 is a pigment, and the thickness of the absorption layer 2 is in the range of 0.30 μm to 3.0 μm. It can be understood that the absorption layer 2 is formed by spin coating the pigment on the surface of the transparent substrate, and the pigment can be uniformly distributed on the surface of the transparent substrate by the spin coating, so as to ensure the uniformity of the thickness of each part of the absorption layer 2 and the uniformity of the light absorption effect of each part of the absorption layer 2. The absorption layer 2 prepared by using the pigment can absorb visible light and partial infrared light, the wavelength of the light band which can be absorbed by the absorption layer 2 is in the range of 380 nm-830 nm, the transmittance of the absorption layer 2 is the highest value when the wavelength of the light is 503nm, and the highest transmittance T is more than 90%.
In order to avoid influencing the transmittance and ensure the lightness and thinness of the double-pass filter, the thickness of the transparent substrate 1 is set to be 0.03-2 mm; in the specific manufacturing process, the material of the transparent substrate 1 may be white glass, acrylic plate, film, or the like.
By applying the double-pass filter, a true color image can be obtained in the daytime, and a clear black and white image can be obtained at night. And because the double-pass optical filter only comprises the transparent substrate 1, the absorption layer 2, the anti-reflection layer 4 and the filter layer 3, the whole structure and the manufacturing process are simple, the cost is low, and the realization of mass production is facilitated.
Referring to fig. 3 and 4, wherein fig. 3 shows transmission spectra of the conventional double pass filter at incident angles of 0 ° and 30 °, and fig. 4 shows transmission spectra of the double pass filter of the present invention at incident angles of 0 ° and 30 °. Comparing fig. 3 and fig. 4, comparative data of the filter characteristics of the dual pass filter of the present invention and the conventional dual pass filter can be obtained, and the specific comparative data is shown in table 3:
table 3: filter characteristic comparison table of double-pass filter and traditional double-pass filter
Because the double-pass filter comprises two passbands, each passband comprises a T50%, when the incident angle is 0 DEG and 30 DEG, the T50% broadband has two offsets, which can be obtained from Table 1, the T50% offset of the traditional double-pass filter is more than 20nm, and the T50% offset of the double-pass filter is less than 10nm, the offset of the T50% broadband of the double-pass filter is small due to the change of the incident angle, the infrared light can be cut off better, and the performance is better than that of the traditional double-pass filter.
Meanwhile, as shown in FIG. 4, at the incident angles of 0 ° and 30 °, Tabs is less than or equal to 0.3%, and λ is 450 and 570nm, corresponding to Tave > is 92%; λ is 850nm, corresponding to Tave > is 92.5%; lambda is 930nm-1100nm and corresponds to Tave less than or equal to 0.2%, wherein lambda is the wavelength of incident light, Tave is the average value of transmittance, and Tabs is the absolute value of transmittance. It can be seen that the double-pass filter of the invention has high peak transmittance and deeper cut-off rate, and can effectively inhibit halo and temperature drift.
A camera assembly according to an embodiment of the second aspect of the invention comprises a double pass filter according to an embodiment of the invention.
According to the camera assembly of the second aspect of the invention, the imaging effect is improved by configuring the double-pass filter of the embodiment of the invention.
The invention is not limited to the above embodiments, and those skilled in the art can make equivalent modifications or substitutions without departing from the spirit of the invention, and such equivalent modifications or substitutions are included in the scope of the claims of the present application.
Claims (10)
1. A two-pass filter, comprising:
a transparent substrate;
the absorption layer is covered on one surface of the transparent matrix;
the filter layer is arranged on the other surface of the transparent substrate; and
the anti-reflection layer is arranged on the surface of the absorption layer far away from the transparent substrate;
the antireflection layer and the filter layer respectively comprise a plurality of odd-numbered medium sub-layers and even-numbered medium sub-layers which are alternately stacked, and the refractive index of the odd-numbered medium sub-layers is higher than that of the even-numbered medium sub-layers;
when the incident angle of infrared light with the wavelength of 800 nm-850 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 10 nm; when the incident angle of visible light with the wavelength of 600 nm-650 nm is 0-30 degrees, the offset of the central cut-off wavelength of the double-pass filter is not more than 5 nm.
2. A double pass filter according to claim 1, wherein: the odd-numbered medium sub-layer is made of at least one of titanium pentoxide, titanium dioxide, zirconium dioxide, tantalum pentoxide and lanthanum titanate, and the even-numbered medium sub-layer is made of silicon dioxide or magnesium fluoride.
3. A double pass filter according to claim 2, characterised in that: the total number of the odd number medium sub-layers and the even number medium sub-layers which form the anti-reflection layer is 4-12.
4. A double pass filter according to claim 3, characterised in that: the thickness of the odd number medium sub-layer forming the anti-reflection layer is 5 nm-60 nm, and the thickness of the even number medium sub-layer forming the anti-reflection layer is 10 nm-150 nm.
5. A double pass filter according to claim 2, characterised in that: the total number of the odd-numbered medium sub-layers and the even-numbered medium sub-layers which constitute the filter layer is 30 to 70.
6. A double pass filter according to claim 5, characterised in that: the thickness of the odd-numbered dielectric sublayer constituting the filter layer is in a range of 10nm to 150nm, and the thickness of the even-numbered dielectric sublayer constituting the filter layer is in a range of 10nm to 450 nm.
7. A double pass filter according to claim 1, wherein: the material of the absorption layer is pigment.
8. A double pass filter according to claim 7, wherein: the thickness of the absorption layer is 0.30-3.0 μm.
9. A double pass filter according to any one of claims 1 to 8, wherein: the thickness of the transparent substrate is 0.03 mm-2 mm.
10. A camera assembly, characterized by comprising a double pass filter according to any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010861630.3A CN111999790A (en) | 2020-08-25 | 2020-08-25 | Double-pass filter and camera assembly |
| CN202011420730.9A CN114355494B (en) | 2020-08-25 | 2020-12-08 | Dual-pass filter and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010861630.3A CN111999790A (en) | 2020-08-25 | 2020-08-25 | Double-pass filter and camera assembly |
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| CN111999790A true CN111999790A (en) | 2020-11-27 |
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| CN202010861630.3A Withdrawn CN111999790A (en) | 2020-08-25 | 2020-08-25 | Double-pass filter and camera assembly |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113759452A (en) * | 2021-04-07 | 2021-12-07 | 广州市佳禾光电科技有限公司 | Three-way filter plate and preparation method thereof, biological imaging device and identification system |
| CN115128712A (en) * | 2022-06-17 | 2022-09-30 | 福建福特科光电股份有限公司 | Antifogging film and preparation method thereof |
-
2020
- 2020-08-25 CN CN202010861630.3A patent/CN111999790A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113759452A (en) * | 2021-04-07 | 2021-12-07 | 广州市佳禾光电科技有限公司 | Three-way filter plate and preparation method thereof, biological imaging device and identification system |
| CN115128712A (en) * | 2022-06-17 | 2022-09-30 | 福建福特科光电股份有限公司 | Antifogging film and preparation method thereof |
| CN115128712B (en) * | 2022-06-17 | 2023-08-29 | 福建福特科光电股份有限公司 | Antifogging film and preparation method thereof |
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