CN111996585A - Semiconductor graphite crucible of czochralski crystal growing furnace - Google Patents

Semiconductor graphite crucible of czochralski crystal growing furnace Download PDF

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Publication number
CN111996585A
CN111996585A CN202010685914.1A CN202010685914A CN111996585A CN 111996585 A CN111996585 A CN 111996585A CN 202010685914 A CN202010685914 A CN 202010685914A CN 111996585 A CN111996585 A CN 111996585A
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CN
China
Prior art keywords
single crystal
furnace body
crucible
crystal furnace
sleeves
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Pending
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CN202010685914.1A
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Chinese (zh)
Inventor
武建军
张培林
柴利春
张作文
王志辉
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Datong Xincheng New Material Co Ltd
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Datong Xincheng New Material Co Ltd
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Priority to CN202010685914.1A priority Critical patent/CN111996585A/en
Publication of CN111996585A publication Critical patent/CN111996585A/en
Pending legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention discloses a semiconductor graphite crucible of a czochralski crystal growing furnace, which comprises a base, wherein a single crystal furnace body is arranged at the middle position of the top of the base, a single crystal furnace cover is arranged at the top of the single crystal furnace body, an installation bin is arranged at one side of the bottom of the single crystal furnace cover, a servo motor is arranged at the bottom inside the installation bin, a gear B is arranged at the output end of the servo motor, a crucible is arranged at the middle position inside the single crystal furnace body, a crucible shaft is arranged at the middle position or the bottom of the crucible, and the crucible shaft extends to the outside of the single crystal furnace body and penetrates through the inside of the base; according to the device, through the mutual matching of the inserted rod, the insertion hole, the sleeve A, the mounting block B, the single crystal furnace cover, the slide rail, the hinge rod, the insertion hole and the crucible, an operator can conveniently and quickly put in materials, and meanwhile, the operator can conveniently and quickly detach the device, so that the convenience of the device is improved.

Description

Semiconductor graphite crucible of czochralski crystal growing furnace
Technical Field
The invention relates to the technical field of graphite crucibles, in particular to a semiconductor graphite crucible of a czochralski crystal growing furnace.
Background
With the development of the photovoltaic industry in the world, the quality requirement on silicon single crystals is higher and higher, the diameter of the silicon single crystals is larger and larger, the silicon single crystals become the material basis of general high-quality photovoltaic cells and have irreplaceable effects, as for the growth and preparation of the silicon crystals, the silicon single crystals comprise natural silicon crystals and artificial silicon crystals, the number of the natural silicon crystals is small, the silicon single crystals are manufactured artificially, and in order to prepare the silicon single crystals with good performance, in the production practice, the silicon single crystal growth technology is continuously perfected through continuous research, practice and exploration;
the prior device has the following problems:
1. when the existing device is used for throwing materials, an operator needs to manually screw a plurality of groups of bolts to open the thrown materials, so that the complexity of the device is increased;
2. the length of the existing device for growing the materials is mostly fixed, and operators need to put the materials in different devices for working when wanting to use the materials with different lengths, so that the inconvenience of the device is increased;
3. the internal anti-collision effect of the existing device is not obvious, and pits are likely to appear on the surface of the device due to large collision, so that the material is influenced.
Disclosure of Invention
The invention aims to provide a semiconductor graphite crucible of a czochralski crystal growing furnace, which aims to solve the following problems of the prior device in the background technology: 1. when the existing device is used for throwing materials, an operator needs to manually screw a plurality of groups of bolts to open the thrown materials, so that the complexity of the device is increased; 2. the length of the existing device for growing the materials is mostly fixed, and operators need to put the materials in different devices for working when wanting to use the materials with different lengths, so that the inconvenience of the device is increased; 3. the internal anti-collision effect of the existing device is not obvious, and pits are likely to appear on the surface of the device due to large collision, so that the material is affected.
In order to achieve the purpose, the invention provides the following technical scheme: a semiconductor graphite crucible of a czochralski crystal growing furnace comprises a base, wherein a single crystal furnace body is arranged at the middle position of the top of the base, a single crystal furnace cover is arranged at the top of the single crystal furnace body, an installation bin is arranged at one side of the bottom of the single crystal furnace cover, a servo motor is arranged at the bottom inside the installation bin, a gear B is arranged at the output end of the servo motor, a crucible is arranged at the middle position inside the single crystal furnace body, a crucible shaft is arranged at the middle position of the bottom of the crucible or is arranged in a promotion manner, the crucible shaft extends to the outside of the single crystal furnace body and penetrates through the inside of the base, installation blocks A are symmetrically arranged at the two sides of the top inside of the single crystal furnace body, guide cylinders are arranged under the two groups of the installation blocks A and extend to the inside of the crucible, hinge rods are hinged to one side, which the two groups of the installation blocks A, and the single crystal bar B runs through the guide cylinder and extends to the inside of the crucible, the top of the single crystal bar B extends to the inside of the single crystal furnace cover and is sleeved with the single crystal bar A, the bilateral symmetry of the single crystal bar A is provided with slide rails, the two sets of slide rails are internally provided with slide blocks matched with the slide rails, the slide blocks extend to the outer sides of the slide rails, the two sets of slide blocks are mutually away from one side and are sleeved with a gear A, the outer side of the gear A is sleeved with a chain, the chain is meshed with the gear B, the bottom of the two sides of the single crystal furnace cover is symmetrically provided with mounting blocks B, the top of the two sides of the single crystal furnace body is symmetrically provided with mounting plates, the tops of the two sets of mounting plates are provided with sleeves B, the inside of the two sets of sleeves B is provided with sleeves A matched with the slide rails, the sleeves A are, the inside of jack is provided with the inserted bar rather than mutually supporting, and the inserted bar runs through sleeve A and extends to sleeve B's outside, the articulated slab that is provided with in both sides of base bottom, two sets of the articulated slab is close to the articulated telescopic link that is provided with in top of one side each other, and the telescopic link keeps away from one side of articulated slab and single crystal furnace body and articulate each other, and is two sets of the outside of telescopic link all is equipped with the spring, and spring and single crystal furnace body interconnect, the positive one end bottom of single crystal furnace body intermediate position department is provided with control panel, control panel passes through the wire and is connected with the servo.
Preferably, the two sets of the installation blocks B are provided with handles on the sides far away from each other, and the outer sides of the handles are provided with anti-skid threads.
Preferably, a spring is arranged at the top inside the sliding rail, a telescopic rod is arranged at the middle position of the top inside the sliding rail, and the output end of the telescopic rod is connected with the top of the sliding block.
Preferably, the outer side of the top of the single crystal rod B is provided with a thread, the inner part of the single crystal rod A is provided with an internal thread, and the thread and the internal thread are matched with each other.
Preferably, one end of the back surface of the single crystal furnace body is provided with a bin gate, and one end of the front surface of the bin gate is provided with a handle.
Preferably, the four corners department of base bottom all is provided with the support column, and the bottom of support column is provided with the rubber pad.
Compared with the prior art, the invention has the beneficial effects that: the semiconductor graphite crucible of the czochralski single crystal furnace can be convenient for operators to rapidly put materials, can also be convenient for increasing the growth length of the materials, and can protect the collision generated by the device in the working process or the carrying process;
1. through the mutual matching of the inserted rod, the insertion hole, the sleeve A, the mounting block B, the single crystal furnace cover, the slide rail, the hinge rod, the insertion hole and the crucible, an operator can conveniently and quickly put in materials, and meanwhile, the operator can conveniently and quickly remove the materials, so that the convenience of the device is improved;
2. the length of the growing material can be conveniently increased through the mutual matching of the servo motor, the gear B, the chain, the gear A, the sliding block, the sliding rail, the single crystal rod A and the single crystal rod B, so that the length of the growing material is not required to be increased by an operator with the help of other tools;
3. through the mutual cooperation of the hinged plate, the telescopic rod and the spring, the collision generated in the working process or the carrying process of the device can be protected, so that the damage to internal parts is reduced, and the service life of the device is prolonged.
Drawings
FIG. 1 is a front cross-sectional view of the present invention;
FIG. 2 is a front view of the present invention;
FIG. 3 is a rear view of the present invention;
fig. 4 is an enlarged view of the gear a according to the present invention.
In the figure: 1. a base; 2. a crucible shaft; 3. a single crystal furnace body; 4. a spring; 5. a crucible; 6. a draft tube; 7. inserting a rod; 8. a sleeve A; 9. mounting a block A; 10. a hinged lever; 11. a slide rail; 12. a slider; 13. a single crystal rod A; 14. a gear A; 15. a chain; 16. a gear B; 17. installing a bin; 18. a servo motor; 19. a lid of a single crystal furnace; 20. a mounting block B; 21. a jack; 22. a sleeve B; 23. mounting a plate; 24. a single crystal rod B; 25. a telescopic rod; 26. a hinge plate; 27. a control panel.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-4, the present invention provides an embodiment: a semiconductor graphite crucible of a czochralski crystal growing furnace comprises a base 1, a single crystal furnace body 3 is arranged at the middle position of the top of the base 1, a single crystal furnace cover 19 is arranged at the top of the single crystal furnace body 3, an installation bin 17 is arranged at one side of the bottom of the single crystal furnace cover 19, a servo motor 18 is arranged at the bottom inside the installation bin 17, a gear B16 is arranged at the output end of the servo motor 18, a crucible 5 is arranged at the middle position inside the single crystal furnace body 3, a crucible shaft 2 is arranged at the middle position or in the middle position of the bottom of the crucible 5, the crucible shaft 2 extends to the outside of the single crystal furnace body 3 and penetrates through the base 1, installation blocks A9 are symmetrically arranged at two sides of the top inside of the single crystal furnace body 3, a guide cylinder 6 is arranged under two groups of installation blocks A9, the guide cylinder 6 extends to the inside of the crucible 5, the side, close to each other, of each of the two groups of hinged rods 10 is hinged with a single crystal rod B24, the single crystal rods B24 penetrate through the guide cylinder 6 and extend to the inside of the crucible 5, the top of the single crystal rod B24 extends to the inside of the single crystal furnace cover 19 and is sleeved with a single crystal rod A13, slide rails 11 are symmetrically arranged on two sides of the single crystal rod A13, sliders 12 matched with the slide rails are arranged inside the two groups of slide rails 11, the sliders 12 extend to the outer sides of the slide rails 11, a gear A14 is sleeved on one side, far away from each other, of the two groups of sliders 12, a chain 15 is sleeved on the outer side of the gear A14, the chain 15 is meshed with the gear B16, the length of the material growing can be conveniently increased, so that the installation blocks B20 are symmetrically arranged at the bottoms on two sides of the single crystal furnace cover 19, the installation plates 23 are symmetrically arranged at the tops of two groups of installation, the two groups of sleeves B22 are internally provided with a sleeve A8 which is matched with the sleeves A3526, the sleeve A8 is connected with the mounting block B20, the bottom of the sleeve A8 and the top of the sleeve B22 are both provided with jacks 21, the jacks 21 are internally provided with insertion rods 7 which are matched with the jacks, the insertion rods 7 penetrate through the sleeve A8 and extend to the outside of the sleeve B22, so that an operator can conveniently and quickly put in materials, and can conveniently and quickly remove the materials, thereby improving the convenience of the device, the hinged plates 26 are hinged on two sides of the bottom of the base 1, the telescopic rods 25 are hinged on the tops of the two groups of hinged plates 26, which are close to each other, the side of the telescopic rods 25, which is far away from the hinged plates 26, is hinged with the single crystal furnace body 3, the springs 4 are sleeved on the outer sides of the two groups of telescopic rods 25, and the springs 4 are connected with the single crystal furnace body, thereby reducing the damage of internal parts and prolonging the service life of the internal parts, a control panel 27 is arranged at the middle position of the bottom of one end of the front surface of the single crystal furnace body 3, and the control panel 27 is electrically connected with the servo motor 18 through a lead.
Furthermore, the two sets of mounting blocks B20 are provided with handles on the side away from each other, and the outside of handle is provided with anti-skidding line, prevents to slide.
Further, the top inside the slide rail 11 is provided with a spring, the middle position of the top inside the slide rail 11 is provided with a telescopic rod, and the output end of the telescopic rod is connected with the top of the slide block 12, so that the slide rail is convenient to fix.
Furthermore, the outer side of the top of the single crystal rod B24 is provided with a thread, the inner part of the single crystal rod A13 is provided with an internal thread, and the thread and the internal thread are matched with each other, so that the rotation adjustment is facilitated.
Furthermore, a bin door is arranged at one end of the back surface of the single crystal furnace body 3, and a handle is arranged at one end of the front surface of the bin door, so that the bin door is convenient to open.
Further, the four corners department of base 1 bottom all is provided with the support column, and the bottom of support column is provided with the rubber pad, slides when preventing to support.
The working principle is as follows: the electric parts of the device are all powered by an external power supply, firstly, the device is moved to a specified position, and the power supply is switched on to turn on the control panel 27;
when the device is used, the inserted rod 7 is pulled out from the inside of the insertion hole 21 to release the control of the sleeve A8, then an operator holds the handle to drive the mounting block B20 to move upwards, the mounting block B20 drives the single crystal furnace cover 19 to move upwards, the single crystal furnace cover 19 drives the slide rail 11 and the parts above the slide rail 11 to move upwards, the slide rail 11 drives the hinge rod 10 to move upwards, after the slide rail is moved to a specified position, the inserted rod 7 is inserted into the insertion hole 21 to fix the sleeve A8 and the parts above, so that the operator puts materials into the crucible 5, the operator can conveniently and quickly put the materials through the matching of the parts, and meanwhile, the operator can conveniently and quickly remove the device, so that the convenience of the device is improved;
during operation, the servo motor 18 is opened through the control panel 27, the gear B16 is driven to rotate through the operation of the servo motor 18, the chain 15 is driven to rotate through the gear B16, the gear A14 is driven to rotate through the chain 15, the sliding block 12 and the sliding rail 11 are driven to simultaneously rotate through the gear A14, the sliding block 12 and the sliding rail 11 drive the single crystal rod A13 to rotate, the single crystal rod A13 rotates on the outer side of the single crystal rod B24, the length of the single crystal rod B24 is increased, the sliding rail 11 is driven to move upwards through the rotation of the single crystal rod A13, the sliding block 12 drives the gear A14 to slide in the sliding rail 11 to simultaneously stretch the spring and the telescopic rod, the length of material growth can be conveniently increased through the matching of the device, and an operator is not required to increase the length of material growth through other tools;
when the device is in operation or handling, the impact is through leading to the fact pressing to articulated plate 26 when the collision appears in the bottom, makes articulated plate 26 press telescopic link 25 and spring 4 simultaneously, cushions its impact through spring 4's elasticity buffer power to reduce the damage of internals, increase its life, drive telescopic link 25 and restore through spring 4's elasticity restoring force, make telescopic link 25 drive articulated plate 26 and restore.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Claims (6)

1. The utility model provides a vertical pulling single crystal growing furnace semiconductor graphite crucible, includes base (1), its characterized in that: the single crystal furnace body (3) is arranged in the middle of the top of the base (1), the single crystal furnace body (3) is arranged at the top of the single crystal furnace body (19), an installation bin (17) is arranged on one side of the bottom of the single crystal furnace body (19), a servo motor (18) is arranged at the bottom inside the installation bin (17), a gear B (16) is arranged at the output end of the servo motor (18), a crucible (5) is arranged in the middle of the inside of the single crystal furnace body (3), a crucible shaft (2) is arranged in the middle of the bottom of the crucible (5) or is arranged in a promotion mode, the crucible shaft (2) extends to the outside of the single crystal furnace body (3) and penetrates through the inside of the base (1), installation blocks A (9) are symmetrically arranged on two sides of the top of the inside of the single crystal furnace body (3), and a guide cylinder (6) is, and draft tube (6) extend to the inside of crucible (5), two sets of one side that installation piece A (9) are close to each other all articulates and is provided with hinge bar (10), two sets of one side that hinge bar (10) are close to each other articulates jointly has single crystal stick B (24), and single crystal stick B (24) run through draft tube (6) and extend to the inside of crucible (5), the top of single crystal stick B (24) extends to the inside of single crystal bell (19) and overlaps and be equipped with single crystal stick A (13), the bilateral symmetry of single crystal stick A (13) is provided with slide rail (11), two sets of the inside of slide rail (11) all is provided with slider (12) rather than mutually supporting, and slider (12) extend to the outside of slide rail (11), two sets of one side that slider (12) kept away from each other overlaps jointly and is equipped with gear A (14), the outside cover of gear A (14) is equipped with chain (15), and the chain (15) and the gear B (16) are meshed with each other, the bottom of the two sides of the single crystal furnace cover (19) is symmetrically provided with mounting blocks B (20), the top of the two sides of the single crystal furnace body (3) is symmetrically provided with mounting plates (23), the tops of the two sets of mounting plates (23) are provided with sleeves B (22), the insides of the two sets of sleeves B (22) are provided with sleeves A (8) matched with the sleeves B, the sleeves A (8) are connected with the mounting blocks B (20) mutually, the bottoms of the sleeves A (8) and the tops of the sleeves B (22) are provided with jacks (21), the insides of the jacks (21) are provided with insertion rods (7) matched with the jacks mutually, the insertion rods (7) penetrate through the sleeves A (8) and extend to the outside of the sleeves B (22), the two sides of the bottom of the base (1) are hinged with hinged plates (26), and the tops of the two sets of the hinged plates (26), and one side of the telescopic rod (25) far away from the hinged plate (26) is hinged with the single crystal furnace body (3), the outer sides of the telescopic rods (25) are both sleeved with springs (4), the springs (4) are connected with the single crystal furnace body (3), a control panel (27) is arranged in the middle of the bottom of the front end of the single crystal furnace body (3), and the control panel (27) is electrically connected with the servo motor (18) through a wire.
2. The semiconductor graphite crucible of a czochralski crystal growing furnace as claimed in claim 1, wherein: two sets of one side that installation piece B (20) kept away from each other all is provided with the handle, and the outside of handle is provided with anti-skidding line.
3. The semiconductor graphite crucible of a czochralski crystal growing furnace as claimed in claim 1, wherein: the top of the interior of the sliding rail (11) is provided with a spring, a telescopic rod is arranged in the middle of the top of the interior of the sliding rail (11), and the output end of the telescopic rod is connected with the top of the sliding block (12).
4. The semiconductor graphite crucible of a czochralski crystal growing furnace as claimed in claim 1, wherein: the outer side of the top of the single crystal rod B (24) is provided with threads, the inner part of the single crystal rod A (13) is provided with internal threads, and the threads are matched with the internal threads.
5. The semiconductor graphite crucible of a czochralski crystal growing furnace as claimed in claim 1, wherein: a bin gate is arranged at one end of the back surface of the single crystal furnace body (3), and a handle is arranged at one end of the front surface of the bin gate.
6. The semiconductor graphite crucible of a czochralski crystal growing furnace as claimed in claim 1, wherein: the four corners department of base (1) bottom all is provided with the support column, and the bottom of support column is provided with the rubber pad.
CN202010685914.1A 2020-07-16 2020-07-16 Semiconductor graphite crucible of czochralski crystal growing furnace Pending CN111996585A (en)

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CN110685011A (en) * 2019-10-21 2020-01-14 大同新成新材料股份有限公司 Intelligent processing equipment for producing single-product silicon thermal field crucible and processing method thereof
CN210185386U (en) * 2019-06-20 2020-03-27 博兴县优博网络科技有限公司 Gas barbecue oven
CN111074333A (en) * 2018-10-19 2020-04-28 中国电子科技集团公司第四十八研究所 Single crystal growth equipment and use method thereof
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102162123A (en) * 2011-04-01 2011-08-24 江苏大学 Dual-heater mobile-heat-shield type Czochralski crystal growing furnace
CN102181918A (en) * 2011-05-23 2011-09-14 仪征市荣昌炭素材料有限公司 Single crystal furnace heating device
CN205711046U (en) * 2016-06-14 2016-11-23 河北同光晶体有限公司 Small furnace cover lifting rotation mechanism
CN106087036A (en) * 2016-07-15 2016-11-09 保山新澳泰能源有限公司 A kind of czochralski crystal growing furnace
CN206457558U (en) * 2016-12-31 2017-09-01 中山市汇佳精密科技有限公司 A kind of single crystal growing furnace bell screws stopping means
CN107541771A (en) * 2017-07-20 2018-01-05 上海汉虹精密机械有限公司 The growth furnace of major diameter single crystal silicon ingot can be grown in bell and furnace tube
CN207552494U (en) * 2018-02-14 2018-06-29 杞县东磁新能源有限公司 A kind of polycrystalline ingot furnace protective device
CN111074333A (en) * 2018-10-19 2020-04-28 中国电子科技集团公司第四十八研究所 Single crystal growth equipment and use method thereof
CN210185386U (en) * 2019-06-20 2020-03-27 博兴县优博网络科技有限公司 Gas barbecue oven
CN210560884U (en) * 2019-08-07 2020-05-19 福建鑫磊晶体有限公司 Single crystal furnace capable of being unfolded and fixed
CN110685011A (en) * 2019-10-21 2020-01-14 大同新成新材料股份有限公司 Intelligent processing equipment for producing single-product silicon thermal field crucible and processing method thereof

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