CN111996514A - Lpcvd工艺中监控硅片膜厚和均一性的方法 - Google Patents
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Abstract
本发明涉及一种LPCVD工艺中监控硅片膜厚和均一性的方法,所属半导体硅片CVD背封层加工工艺技术领域,包括如下操作步骤:打开反应炉的仓门,在硅舟架上放置若干组硅片,两组硅片间均增设监控片,而后关闭反应炉的仓门。此时通过打开气动球阀和手阀,启动真空泵进行循环输送气体的过程,同时温控底座控制炉壳体内加热炉壁的温度控制。当LPCVD工艺成膜后,测量若干监控片的膜厚和均一性,根据监控片的膜厚和均一性的测试数据,对气体流速、反应炉内压力和温度进行调整。具有操作方便、监测时效性高、测量准确度高和运行稳定性好的特点。解决了LPCVD工艺中监控硅片膜厚测量也精确的问题。通过测试数据,便于调整LPCVD参数,提高产品质量。
Description
技术领域
本发明涉及半导体硅片CVD背封层加工工艺技术领域,具体涉及一种LPCVD工艺中监控硅片膜厚和均一性的方法。
背景技术
低压化学气相沉积(LPCVD)具有沉积速率快、均匀性好、气相形核引起颗粒污染的几率小等优点,在半导体硅片行业中常采用LPCVD的方法在硅片背面制备多晶硅薄膜,作为背封层阻止掺杂剂扩散,同时起到吸杂的作用。
LPCVD即Low Pressure Chemical Vapor Deposition低压力化学气相沉积法广泛用于氧化硅、氮化物、多晶硅沉积,过程在管炉中执行,要求也相当高的温度。
硅片的成膜质量与LPCVD的温度、气体流量和压强等参数有关,LPCVD炉管内不同位置,其对应温度和气体流量等参数会不同,在生产过程中需要监控各个位置硅片膜厚和均一性状况。
薄膜厚度的测试通常采用光学方法,比较广泛应用的有光学反射法和椭偏仪方法。光学方法测量膜厚对衬底的粗糙度要求较高,通常用抛光片作为衬底CVD成膜后测量膜厚,但成膜后的膜厚太薄测量难度大而且准确度低。
发明内容
本发明主要解决现有技术中存在由于无法得知整个炉管内的硅片成膜后的差异从而不能及时调整工艺的不足,提供了一种LPCVD工艺中监控硅片膜厚和均一性的方法,其具有操作方便、监测时效性高、测量准确度高和运行稳定性好的特点。解决了LPCVD工艺中监控硅片膜厚测量也精确的问题。通过测试数据,便于调整LPCVD参数,提高产品质量。
本发明的上述技术问题主要是通过下述技术方案得以解决的:
一种LPCVD工艺中监控硅片膜厚和均一性的方法,包括如下操作步骤:
第一步:打开反应炉的仓门,在硅舟架上放置若干组硅片,两组硅片间均增设监控片,而后关闭反应炉的仓门。
第二步:此时通过打开气动球阀和手阀,启动真空泵进行循环输送气体的过程,同时温控底座控制炉壳体内加热炉壁的温度控制。
第三步:当LPCVD工艺成膜后,测量若干监控片的膜厚和均一性,根据监控片的膜厚和均一性的测试数据,对气体流速、反应炉内压力和温度进行调整。
作为优选,气动球阀一端的送气管将气体通过进气管输送至反应炉内,实现硅片的成膜过程。同时真空泵通过排气管与反应炉上的出气管法兰连通,实现反应炉内低压状态。
作为优选,通过在气动球阀与进气管间、排气管上均设置压力表,实现对反应炉内压强的实时监控。
作为优选,在抛光硅片上沉积5000A的二氧化硅层组成监控片。
作为优选,硅片总共8组,每组为25片。
本发明能够达到如下效果:
本发明提供了一种LPCVD工艺中监控硅片膜厚和均一性的方法,与现有技术相比较,具有操作方便、监测时效性高、测量准确度高和运行稳定性好的特点。解决了LPCVD工艺中监控硅片膜厚测量也精确的问题。通过测试数据,便于调整LPCVD参数,提高产品质量。
附图说明
图1是本发明的结构示意图。
图2是本发明的反应炉结构剖视图。
图3是本发明的监控片的结构示意图。
图中:送气管1,气动球阀2,压力表3,进气管4,反应炉5,出气管6,排气管7,手阀8,真空泵9,炉壳体10,加热炉壁11,监控片12,硅片13,硅舟架14,温控底座15,二氧化硅层16,抛光硅片17。
具体实施方式
下面通过实施例,并结合附图,对发明的技术方案作进一步具体的说明。
实施例:如图1、图2和图3所示,LPCVD工艺中监控硅片膜厚和均一性的方法,包括如下操作步骤:
第一步:打开反应炉5的仓门,在硅舟架14上放置8组硅片13,每组为25片。两组硅片13间均增设监控片12,而后关闭反应炉5的仓门。
在抛光硅片17上沉积5000A的二氧化硅层16组成监控片12。
第二步:此时通过打开气动球阀2和手阀8,启动真空泵9进行循环输送气体的过程,通过在气动球阀2与进气管4间、排气管7上均设置压力表3,实现对反应炉5内压强的实时监控。同时温控底座15控制炉壳体10内加热炉壁11的温度控制。
气动球阀2一端的送气管1将气体通过进气管4输送至反应炉5内,实现硅片13的成膜过程;同时真空泵9通过排气管7与反应炉5上的出气管6法兰连通,实现反应炉5内低压状态。
第三步:当LPCVD工艺成膜后,测量若干监控片12的膜厚和均一性,根据监控片12的膜厚和均一性的测试数据,对气体流速、反应炉5内压力和温度进行调整。
综上所述,该LPCVD工艺中监控硅片膜厚和均一性的方法,具有操作方便、监测时效性高、测量准确度高和运行稳定性好的特点。解决了LPCVD工艺中监控硅片膜厚测量也精确的问题。通过测试数据,便于调整LPCVD参数,提高产品质量。
以上所述仅为本发明的具体实施例,但本发明的结构特征并不局限于此,任何本领域的技术人员在本发明的领域内,所作的变化或修饰皆涵盖在本发明的专利范围之中。
Claims (5)
1.一种LPCVD工艺中监控硅片膜厚和均一性的方法,其特征在于包括如下操作步骤:
第一步:打开反应炉(5)的仓门,在硅舟架(14)上放置若干组硅片(13),两组硅片(13)间均增设监控片(12),而后关闭反应炉(5)的仓门;
第二步:此时通过打开气动球阀(2)和手阀(8),启动真空泵(9)进行循环输送气体的过程,同时温控底座(15)控制炉壳体(10)内加热炉壁(11)的温度控制;
第三步:当LPCVD工艺成膜后,测量若干监控片(12)的膜厚和均一性,根据监控片(12)的膜厚和均一性的测试数据,对气体流速、反应炉(5)内压力和温度进行调整。
2.根据权利要求1所述的LPCVD工艺中监控硅片膜厚和均一性的方法,其特征在于:气动球阀(2)一端的送气管(1)将气体通过进气管(4)输送至反应炉(5)内,实现硅片(13)的成膜过程;同时真空泵(9)通过排气管(7)与反应炉(5)上的出气管(6)法兰连通,实现反应炉(5)内低压状态。
3.根据权利要求2所述的LPCVD工艺中监控硅片膜厚和均一性的方法,其特征在于:通过在气动球阀(2)与进气管(4)间、排气管(7)上均设置压力表(3),实现对反应炉(5)内压强的实时监控。
4.根据权利要求1所述的LPCVD工艺中监控硅片膜厚和均一性的方法,其特征在于:在抛光硅片(17)上沉积5000A的二氧化硅层(16)组成监控片(12)。
5.根据权利要求1所述的LPCVD工艺中监控硅片膜厚和均一性的方法,其特征在于:硅片(13)总共8组,每组为25片。
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