CN111992239B - Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst and preparation method and application thereof - Google Patents
Silver/bismuth vanadate/carbon nitride heterojunction photocatalyst and preparation method and application thereof Download PDFInfo
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 27
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 27
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 title claims abstract description 24
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 22
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- DGQOCLATAPFASR-UHFFFAOYSA-N tetrahydroxy-1,4-benzoquinone Chemical compound OC1=C(O)C(=O)C(O)=C(O)C1=O DGQOCLATAPFASR-UHFFFAOYSA-N 0.000 description 1
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- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
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Abstract
The invention relates to a silver/bismuth vanadate/carbon nitride heterojunction photocatalyst and a preparation method and application thereof, wherein the method comprises the step 1 of exposing BiVO (bismuth VO) with a (010) crystal face 4 Adding the powder into deionized water, mixing uniformly, performing ultraviolet irradiation, adding AgNO 3 Uniformly mixing under ultraviolet irradiation, and finally washing and drying the precipitate in sequence to prepare the Ag/BiVO 4 Powder; mixing melamine and HNO 3 Uniformly mixing the solution and ethanol, evaporating to dryness, calcining the obtained precursor twice, and uniformly mixing the obtained powder in deionized water; step 2, Ag/BiVO 4 And uniformly mixing the powder in deionized water, performing ultraviolet illumination, and sequentially washing and drying the powder to obtain the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst. By adopting a photo-selective deposition method, the photo-response range of the catalyst is enlarged, the separation efficiency of carriers is improved, the recombination rate of electron and hole pairs is delayed, and the effective photo-catalytic activity of the heterojunction is realized.
Description
Technical Field
The invention belongs to the field of functional materials, and particularly relates to a silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as a preparation method and application thereof.
Background
The environmental pollution problem caused by the rapid development of the industry is seriously worsened, and the semiconductor photocatalysis technology can degrade pollutants by utilizing clean renewable energy sources to purify the environment.
Bismuth vanadate (BiVO) 4 ) Mainly has three crystal structures of tetragonal scheelite, tetragonal zircon and monoclinic phase scheelite. Monoclinic phase BiVO 4 Has obvious absorption band in visible region, monoclinic phase BiVO 4 The absorption in the visible region is mainly caused by the transition of electrons from the Bi 6s orbital or the hybrid orbital of Bi 6s and O2 p to the V3 d orbital. Monoclinic phase BiVO 4 (m-BiVO 4 ) The forbidden band width of the bismuth-based photocatalyst is about 2.4eV, is one of semiconductors with good photocatalytic effect in the bismuth-based photocatalyst, and has the advantages of no toxicity, narrow forbidden band width, good photochemical stability, strong redox capability and the like.
However BiVO 4 The disadvantages of poor carrier separation efficiency and high recombination rate of photo-generated electron-hole pairs limit the practical application of the material to a certain extent.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst as well as the preparation method and the application thereof, and the photo-selective deposition method is adopted, so that the photoresponse range of the catalyst is enlarged, the separation efficiency of current carriers is improved, the recombination rate of electron and hole pairs is delayed, and the effective photocatalytic activity of the heterojunction is realized.
The invention is realized by the following technical scheme:
the preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst comprises the following steps:
firstly, melamine and HNO 3 Uniformly mixing the solution and ethanol, evaporating to dryness to obtain a precursor, and calcining the precursor twice to obtain g-C 3 N 4 Powder of g-C 3 N 4 The powder is evenly mixed in deionized water to obtain g-C 3 N 4 A solution;
and 3, sequentially washing and drying the powder in the mixed system D to obtain the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst.
Preferably, BiVO with (010) crystal face exposed in step 1 4 And adding the powder into deionized water, uniformly mixing, and then carrying out ultraviolet irradiation for 0.5-1 h.
Preferably, system A is mixed with AgNO in step 1 3 And uniformly mixing in an ultrasonic stirring mode, wherein the ultrasonic stirring time is 3-5 h.
Preferably, the HNO in the step 1 3 HNO in solution 3 The concentration of (A) is 1-2 mol/L, melamine and HNO 3 And ethanol in a mass ratio of 1: 20: (7-10).
Preferably, step 1 is carried out by mixing melamine and HNO 3 And uniformly mixing the solution and ethanol, and steaming at 70-90 ℃ for 2-5 h.
Preferably, in the step 1, the precursor is firstly subjected to heat preservation for 5-6 hours at the temperature of 560-580 ℃, then cooled to room temperature, heated to 480-500 ℃, and subjected to heat preservation for 3-4 hours to obtain g-C 3 N 4 And (3) powder.
Further, in the step 1, the precursor is heated to 560-580 ℃ at a heating rate of 4-7 ℃/min, and then heated to 480-500 ℃ at a heating rate of 6-10 ℃/min.
Preferably, Ag/BiVO in step 2 4 The mass ratio of the powder to the deionized water is 1:100, and Ag/BiVO 4 Uniformly mixing the powder with deionized water, and then carrying out ultraviolet illumination for 0.5-1 h;
mixing systems C with g-C 3 N 4 And uniformly mixing the solution, and then carrying out ultraviolet illumination for 2.5-3.5 h.
The silver/bismuth vanadate/carbon nitride heterojunction photocatalyst is obtained by the preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst.
The silver/bismuth vanadate/carbon nitride heterojunction photocatalyst is applied to degradation of organic pollutants within the range of 200-1500 nm.
Compared with the prior art, the invention has the following beneficial technical effects:
the preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst firstly utilizes melamine and HNO 3 And ethanol by a second calcination to produce modified g-C 3 N 4 Photocatalyst is mixed evenly in deionized water to obtain g-C with certain electronegativity 3 N 4 Then the solution is prepared into Ag-BiVO by adopting a photo-selective deposition method 4 -g-C 3 N 4 Heterojunction photocatalyst, such that ultraviolet light irradiates Ag + Adsorbing to BiVO 4 And (010) crystal face of (g-C) and is reduced 3 N 4 Can be BiVO 4 (110) Hole adsorption of crystal face by BiVO 4 (110) Crystal face and g-C 3 N 4 Electrostatic force at interface, BiVO 4 (010) And (110) energy level difference of crystal face, Ag and BiVO 4 The electric field formed by the Schottky junction of the (010) crystal surface promotes the migration of photogenerated carriers and inhibits the recombination of electron-hole pairs, thereby forming Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst. BiVO 4 And g-C 3 N 4 Has matched energy band structure and crystal face structure, and the local magnetic field of plasma Ag acts on semiconductor to increase the generation of electron-hole pair, so accelerating the generation of photo-generated electron-hole pairThe electrons are transferred. Through constructing Ag-BiVO 4 -g-C 3 N 4 The heterojunction photocatalyst can change the problem of high recombination rate of electron-hole pairs, is beneficial to the effective separation and migration of photoproduction electrons and holes, improves the concentration of carriers, provides more reaction time for the catalytic reaction step of the photocatalytic reaction, and further improves the BiVO 4 The photocatalytic performance of the composite photocatalyst is improved.
The heterojunction photocatalyst silver/bismuth vanadate/carbon nitride has higher degradation rate on rhodamine B, and shows that the photocatalyst can be used for degrading organic pollutants and has good application prospect.
Drawings
FIG. 1 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 XRD pattern of the heterojunction photocatalyst;
FIG. 2 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 SEM spectra of the heterojunction photocatalyst;
FIG. 3 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 UV-Vis DRS spectra of the heterojunction photocatalyst;
FIG. 4 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 A degradation map of the heterojunction photocatalyst for rhodamine B;
FIG. 5 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 Active species capture experimental plot for heterojunction photocatalyst;
FIG. 6 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 A photocatalytic mechanism diagram of a heterojunction photocatalyst.
Detailed Description
The present invention will now be described in further detail with reference to specific examples, which are intended to be illustrative, but not limiting, of the invention.
Carbon nitride having alpha-C bonded by element C, N to form a strong covalent bond structure 3 N 4 、β-C 3 N 4 Cube C 3 N 4 Quasi-cubic C 3 N 4 Graphite-like phase C 3 N 4 (g-C 3 N 4 ) In total 5, wherein g-C 3 N 4 Is the most stable phase, is easy to synthesize and has a layered structure. The structural unit of the ideal graphite phase carbon nitride mainly comprises triazine ring (C) 3 N 3 ) Or a heptazine ring (C) 6 N 7 ) Both carbon and nitrogen atoms of the two structural units are sp 2 And (3) forming a pi-pi conjugated electron structure similar to two-dimensional graphene in a hybridization mode, and forming a three-dimensional crystal structure in a graphite-like repeated stacking mode. g-C 3 N 4 Has a conduction band position of about-1.30 eV, a valence band position of about 1.40eV, and a g-C 3 N 4 The band gap width between the valence conduction bands is 2.70 eV. The invention improves the preparation method to obtain g-C with certain electronegativity 3 N 4 And (3) solution.
The exposed (010) crystal face of the monoclinic phase bismuth vanadate can provide more active sites for the photo-oxidation reduction reaction, and is helpful for the high-activity oxidation active species O on the surface of the catalyst 2 - And h + The degradation rate is improved.
According to the preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst, BiVO can be solved through metal deposition and electrostatic adsorption methods 4 The method has the problems of poor carrier separation efficiency and high recombination rate of photon-generated electron-hole pairs, and comprises the following steps:
Step 4, mixing melamine C 3 N 3 (NH 2 ) 3 Placing into a beaker, and adding HNO prepared in advance 3 Solution and ethanol, HNO 3 The concentration of the solution is 1-2 mol/L, the amount of ethanol is 160-200 mL, C 3 N 3 (NH 2 ) 3 ：HNO 3 : ethanol (mass ratio) 1: 20: (7-10), heating the mixture to 70-90 ℃ while stirring to evaporate the solution until the solution cannot be stirred, wherein the time for evaporating the solution is 2-5 h, and thus preparing the melamine- (HNO) 3 ) 3 And drying the intermediate product to obtain precursor powder. Placing the precursor powder into a muffle furnace for calcination, heating to 560-580 ℃ at the speed of 4-7 ℃/min for one-time calcination, preserving heat for 5-6 h, cooling to room temperature, and destroying van der Waals force between layers; then placing the mixture into a muffle furnace for secondary calcination, raising the temperature to 480-500 ℃ at the speed of 6-10 ℃/min for the secondary calcination, preserving the temperature for 3-4 h so as to remove the miscellaneous bonds such as amino groups, and cooling to room temperature to obtain g-C 3 N 4 And (3) powder.
Step 5, mixing g-C 3 N 4 Dissolving the powder in deionized water, and ultrasonically stirring to obtain powder for mixing with the powder of g-C 3 N 4 Breaking bonds and stripping to obtain g-C with certain electronegativity 3 N 4 Solution to form precursor solution B, g-C 3 N 4 The electronegativity of (a) is-25 to-15 mV;
step 6, preparing an Ag/(010) crystal face BiVO 4 Adding the powder into deionized water, and adding Ag/(010) crystal face BiVO 4 The mass ratio of the powder to the deionized water is 1:100, the powder and the deionized water are stirred uniformly by ultrasonic, and ultraviolet illumination is carried out for 0.5-1 h to obtain a precursor solution C; pouring the precursor solution C into the precursor solution B to obtain a mixed solution, and ultrasonically stirring uniformly to obtain the precursor solution g-C 3 N 4 And Ag/(010) crystal face BiVO 4 The mass ratio of the ultraviolet light to the ultraviolet light is 11:40, and the ultraviolet light is continuously carried out for 2.5-3.5 h. Washing the obtained powder with ethanol, washing with water, and drying for 10-12 h to obtain Ag-BiVO 4 -g-C 3 N 4 HeterojunctionA photocatalyst powder.
In the step 3, the step 5 and the step 6, the power of the mercury lamp used in the illumination reduction method is generally 300W, and the ultrasonic power is 85-95W.
g-C 3 N 4 Loaded in BiVO 4 (110) Crystal face, Ag is loaded in BiVO 4 (010) Crystal faces which form a full spectrum (200-1500 nm) response Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst.
Ag-BiVO 4 -g-C 3 N 4 (i.e., g-C) 3 N 4 BiVO with-Ag/(010) crystal face 4 ) The heterojunction photocatalyst can degrade organic pollutants in a full-spectrum response range.
Example 1:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Putting the mixture into a beaker, and simultaneously adding 95mL of 1mol/L HNO prepared in advance 3 And heating the solution and 160mL of ethanol to 80 ℃ while stirring, keeping the temperature for 5h until the solution is evaporated to dryness and cannot be stirred, and drying the solution to obtain precursor powder. Putting the precursor powder into a muffle furnace, heating to 560 ℃ at the speed of 7 ℃/min, keeping the temperature for 5h, calcining, and cooling to room temperature; then the mixture is put into a muffle furnace and heated to 480 ℃ at a speed of 4 ℃/minKeeping the temperature for 3 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 The powder is dissolved in 40mL of deionized water and is subjected to ultrasonic stirring for 4h to obtain g-C with the electronegativity of-17 mV 3 N 4 Solution to form precursor liquid B;
step 6, 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and carrying out ultraviolet irradiation for 0.5h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 3.5 h. Washing the powder with ethanol, washing with water, and drying for 8h to obtain Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst powder.
Example 2:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Putting the mixture into a beaker, and simultaneously adding 95mL of 1.3mol/L HNO prepared in advance 3 And heating the solution and 180mL of ethanol to 80 ℃ while stirring, keeping the temperature for 3h until the solution is evaporated to dryness and cannot be stirred, and drying the solution to obtain precursor powder. The precursor powder was placed in a muffle furnace at 7 deg.CHeating to 570 ℃ at a speed of/min, keeping the temperature for 6h, calcining, and cooling to room temperature; then placing the mixture in a muffle furnace, heating to 490 ℃ at the speed of 6 ℃/min, preserving the heat for 3 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 Dissolving the powder in 40mL of deionized water, and carrying out ultrasonic stirring for 3h to obtain g-C with electronegativity of-20 mV 3 N 4 Solution to form precursor solution B;
step 6, adding 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and carrying out ultraviolet irradiation for 0.5h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 3 hours. Washing the powder with ethanol, washing with water, and drying for 8h to obtain Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst powder.
Example 3:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Putting the mixture into a beaker, and simultaneously adding 95mL of 1.3mol/L HNO prepared in advance 3 The solution and 200mL of ethanol were heated while stirring toAnd keeping the temperature at 80 ℃ for 4 hours until the solution is evaporated to dryness and can not be stirred, and drying the solution to obtain precursor powder. Putting the precursor powder into a muffle furnace, heating to 560 ℃ at the speed of 6 ℃/min, keeping the temperature for 5h, calcining, and cooling to room temperature; then placing the mixture in a muffle furnace, heating to 480 ℃ at the speed of 5 ℃/min, preserving heat for 4 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 The powder is dissolved in 40mL of deionized water and is subjected to ultrasonic stirring for 4h to obtain g-C with the electronegativity of-21 mV 3 N 4 Solution to form precursor solution B;
step 6, 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and performing ultraviolet irradiation for 1h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 3 hours. Washing the powder with ethanol, washing with water, and drying for 8 hr to obtain g-C 3 N 4 BiVO with-Ag/(010) crystal face 4 A heterojunction photocatalyst powder.
Example 4:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Is put intoSimultaneously adding 95mL of 2mol/L HNO prepared in advance into a beaker 3 And heating the solution and 170mL of ethanol to 70 ℃ while stirring, keeping the temperature for 5h until the solution is evaporated to dryness and cannot be stirred, and drying the solution to obtain precursor powder. Putting the precursor powder into a muffle furnace, heating to 560 ℃ at the speed of 7 ℃/min, keeping the temperature for 5h, calcining, and cooling to room temperature; then placing the mixture in a muffle furnace, heating to 500 ℃ at the speed of 4 ℃/min, preserving the heat for 4 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 Dissolving the powder in 40mL of deionized water, and carrying out ultrasonic stirring for 3h to obtain g-C with electronegativity of-23 mV 3 N 4 Solution to form precursor solution B;
step 6, 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and carrying out ultraviolet irradiation for 0.5h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 2.5 h. Washing the powder with ethanol, washing with water, and drying for 8h to obtain Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst powder.
Example 5:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Putting the mixture into a beaker, and simultaneously adding 95mL of 1.6mol/L HNO prepared in advance 3 And heating the solution and 190mL of ethanol to 80 ℃ while stirring, keeping the temperature for 4h until the solution is evaporated to dryness and cannot be stirred, and drying the solution to obtain precursor powder. Putting the precursor powder into a muffle furnace, heating to 560 ℃ at the speed of 7 ℃/min, keeping the temperature for 5h, calcining, and cooling to room temperature; then placing the mixture in a muffle furnace, heating to 485 ℃ at the speed of 6 ℃/min, preserving heat for 4 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 The powder is dissolved in 40mL of deionized water and is ultrasonically stirred for 5h to obtain g-C with the electronegativity of-25 mV 3 N 4 Solution to form precursor liquid B;
step 6, 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and carrying out ultraviolet irradiation for 1h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 2.5 h. Washing the powder with ethanol, washing with water, and drying for 8h to obtain Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst powder.
Example 6:
Step 4, 10g of melamine C 3 N 3 (NH 2 ) 3 Putting the mixture into a beaker, and simultaneously adding 95mL of 1mol/L HNO prepared in advance 3 And heating the solution and 200mL of ethanol to 90 ℃ while stirring, keeping the temperature for 4h until the solution is evaporated to dryness and cannot be stirred, and drying the solution to obtain precursor powder. Putting the precursor powder into a muffle furnace, heating to 570 ℃ at the speed of 4 ℃/min, keeping the temperature for 5h, calcining, and cooling to room temperature; then placing the mixture in a muffle furnace, heating to 495 ℃ at the speed of 10 ℃/min, preserving heat for 3 hours for secondary calcination, and cooling to room temperature to obtain oxidized g-C 3 N 4 And (3) powder.
Step 5, oxidizing 0.11g of g-C 3 N 4 Dissolving the powder in 40mL of deionized water, and carrying out ultrasonic stirring for 5h to obtain g-C with electronegativity of-18 mV 3 N 4 Solution to form precursor liquid B;
step 6, 0.4g of Ag/(010) crystal face BiVO 4 Adding the powder into 40mL of deionized water, ultrasonically stirring uniformly, and performing ultraviolet irradiation for 1h to obtain a precursor solution C; and pouring the precursor solution C into the precursor solution B to obtain a mixed solution, carrying out ultrasonic stirring uniformly, and continuing carrying out ultraviolet illumination for 3.5 hours. Washing the powder with ethanol, washing with water, and drying for 8 hr to obtain g-C 3 N 4 BiVO with-Ag/(010) crystal face 4 A heterojunction photocatalyst powder.
Comparative example 1
and 2, heating the primary calcined powder to 480 ℃ at a heating rate of 5 ℃/min, preserving heat for 2 hours, and cooling to room temperature for later use.
Comparative example 2
6mmol of Bi (NO) 3 ) 3 ·5H 2 O is dissolved in 40mL of HNO with the concentration of 1mol/L 3 Stirring the solution for 30min, and adding 6mmol of NH 4 VO 3 Stirring for 120min, passing through 70 deg.C, 15 deg.Ch hydrothermal reaction to obtain exposed (010) crystal face BiVO 4 And (4) precipitating, and washing, washing and drying the precipitate with ethanol for later use.
Comparative example 3
0.4g of BiVO with the (010) crystal face exposed 4 Dispersing the powder in deionized water, and adding 0.1g AgNO 3 Irradiating for 5 hours under ultraviolet light to prepare Ag/(010) crystal face BiVO 4 Washing with ethanol, washing with water, and drying.
FIG. 1 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 XRD diffraction pattern of the heterojunction photocatalyst. At diffraction peaks of 19.02 degrees, 28.98 degrees and 30.62 degrees, corresponding to standard scheelite-type monoclinic phase BiVO with I2/a space group 4 Diffraction peaks of (110), (121), (040) crystal face of standard card (JCPDS No. 14-0688). The peak appearing at 27.54 ° 2 θ is g-C 3 N 4 (002) Interlayer stacking diffraction peak of aromatic structure of crystal face corresponding to g-C 3 N 4 Ascribed to g-C 3 N 4 The (100) plane structure in the crystal plane had a stacking unit diffraction peak of disappearance of BiVO at 2 [ theta ] 28.98 DEG 4 (121) Diffraction peak intensity of crystal face with g-C 3 N 4 Is enhanced by the addition of (B) indicates that g-C 3 N 4 Introduction of (2) to BiVO 4 The crystal structure had no effect and no new diffraction peaks were observed in the sample, indicating that no impurities were formed during the preparation. XRD result shows that Ag-BiVO 4 -g-C 3 N 4 The simultaneous presence of g-C in a heterojunction photocatalyst 3 N 4 Ag and BiVO 4 Three phases, no other impurities were observed.
FIG. 2 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 SEM spectra of the heterojunction photocatalyst. BiVO with exposed crystal face 4 The photocatalyst crystal is decagonal, obvious (010) crystal face and (110) crystal face exist, and Ag particles are uniformly dispersed in BiVO 4 (010) Crystal face, granular g-C 3 N 4 Distributed in BiVO under the action of electrostatic attraction 4 (110) On the crystal plane.
FIG. 3 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 UV-Vis DRS profile of heterojunction photocatalyst. In the figure, the curves are (a) BiVO 4 ；(b)g-C 3 N 4 (ii) a (c) Ag/(010) crystal face BiVO 4 ；(d)Ag-BiVO 4 -g-C 3 N 4 Ultraviolet-visible diffuse reflectance absorption spectra of the heterojunction, all samples show strong absorption in the visible region. BiVO in FIG. 3 4 And g-C 3 N 4 Respectively at 450nm and 550 nm. Ag/(010) crystal face BiVO 4 And Ag-BiVO 4 -g-C 3 N 4 The absorption range of the heterojunction is about 200-1500 nm. Description of g-C 3 N 4 -Ag-BiVO 4 The heterojunction photocatalyst has light absorption in a near infrared region of 750-1500 nm. And Ag/(010) crystal face BiVO 4 In contrast, due to Ag and g-C 3 N 4 Loaded in BiVO 4 The Surface Plasmon Resonance (SPR) effect caused by the surface of the Ag nano particles enhances Ag-BiVO 4 -g-C 3 N 4 The heterojunction transverse wave effect weakens Ag-BiVO 4 -g-C 3 N 4 The light absorption intensity in the near infrared region is 750-1500 nm.
FIG. 4 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 Degradation diagram of heterojunction photocatalyst to rhodamine B. Ag-BiVO 4 -g-C 3 N 4 After the heterojunction is adsorbed and desorbed for 30min in dark light for balance, the degradation rate of rhodamine B reaches more than 80% after illumination for 120min, and the crystal face BiVO is exposed 4 And Ag/(010) crystal face BiVO 4 The degradation rate of rhodamine B is only 26% and 52%, and the degradation rate of the heterojunction photocatalyst to rhodamine B is relative to BiVO 4 And Ag/(010) crystal face BiVO 4 Improved by about 3.1 and 1.54 times, greatly improved BiVO 4 The photocatalytic performance of (2).
FIG. 5 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 Active species capture profile of heterojunction photocatalyst. Adding 1, 4-Benzoquinone (BQ) as. O 2 - The capture agent has 26.5 percent of degradation rate on rhodamine B, the ethylene diamine tetraacetic acid (EDTA-2Na) is added as a hole scavenger, the degradation rate on rhodamine B is 40.7 percent, and the degradation rate on superoxide radical (. O) is proved 2 - ) And a cavity (h) + ) Is a main active substance causing the degradation of rhodamine B in the current photocatalytic system; when No active species trapping agent is added (No Scavenger), the degradation of the system to rhodamine B can reach 79.9 percent; tert-butyl alcohol (TBA) is added as a hydroxyl scavenger, the degradation rate of rhodamine B is 65.7 percent, the degradation efficiency is slightly reduced, and the result shows that (OH) is not a main active substance causing the degradation of rhodamine B in the current photocatalytic system and that Ag-BiVO 4 -g-C 3 N 4 Active species O in the process of degrading rhodamine B by using heterojunction photocatalyst 2 - And h + Plays a main role in degradation.
FIG. 6 shows Ag-BiVO prepared in example 3 of the present invention 4 -g-C 3 N 4 A photocatalytic mechanism diagram of a heterojunction photocatalyst. BiVO due to exposed crystal face 4 The (010) and (110) crystal planes of (A) and (B) have energy level differences, so that a surface heterojunction is formed at the interface of the two crystal planes. After being excited by ultraviolet light, under the action of a surface heterojunction, electrons and holes respectively migrate to BiVO 4 Crystal faces of (010) and (110) of the crystal, adding AgNO 3 After solution, Ag + Adsorbed on BiVO 4 Is reduced to form Ag/(010) crystal face BiVO 4 A heterojunction. Mixing Ag/(010) crystal face BiVO 4 The heterojunction aqueous solution is charged with negative g-C under the irradiation of ultraviolet light 3 N 4 Quilt BiVO 4 (110) The hole of the crystal face is absorbed to form Ag loaded in BiVO 4 (010) Crystal face, g-C 3 N 4 Loaded in BiVO 4 (110) Crystal face Ag-BiVO 4 -g-C 3 N 4 A heterojunction photocatalyst. Namely in BiVO 4 (110) Crystal face and g-C 3 N 4 The interface is formed by the built-in electric field E of electrostatic force 1 While, BiVO 4 The difference of the existing energy levels of the (110) and (010) crystal planes of BiVO 4 A surface built-in electric field E is formed between the (110) and (010) crystal planes 2 Metallic Ag and BiVO 4 The Schottky junction of the (010) crystal plane of the silicon substrate forms a built-in electric field E 3 . When Ag-BiVO 4 -g-C 3 N 4 Ag and BiVO when the heterojunction photocatalyst is excited by visible light 4 And g-C 3 N 4 Can be used forIn response to and occurrence of separation of electron-hole pairs and migration of carriers, electrons migrate from the valence band of the semiconductor to the conduction band, while leaving holes in the valence band; in the built-in electric field E formed by electrostatic force 1 Under the action of (b), g-C 3 N 4 Transfer of photogenerated electrons on conduction band to BiVO 4 (110) Crystal plane in electric field E 2 Driven by the electron donor, the photo-generated electrons and the migration electrons further migrate to the BiVO 4 (010) crystal face of (III) with built-in electric field E 3 The plasma Ag with LSPR effect can generate high-energy electron-hole pairs under the excitation of light, and the excited state Ag returns to the original state by receiving electrons, thereby continuously generating more high-energy electron-hole pairs. While in built-in electric field E 2 Driven by BiVO 4 Migration of photogenerated holes of (010) crystal plane to BiVO 4 Crystal face of (110), built-in electric field E 1 Is transferred to BiVO under the action of 4 (110) Hole of crystal face further moves to g-C 3 N 4 The valence band of (c). Finally, the electric field formed by the electrostatic force, the energy level difference, and the schottky junction promotes the migration of the photogenerated carriers and inhibits the recombination of electron-hole pairs. Finally, the local magnetic field of the plasma Ag acts on the BiVO 4 And g-C 3 N 4 Increasing BiVO 4 And g-C 3 N 4 Photo-generated electron-hole pairs are generated, thereby accelerating Ag-BiVO 4 -g-C 3 N 4 And (3) separating the photo-generated electron-hole pairs of the heterojunction photocatalyst. Energetic electrons generated by the plasma Ag will be O 2 Reduced to O 2 - Accumulated in g-C 3 N 4 And holes in the plasma Ag valence band to degrade contaminants. In addition, g to C 3 N 4 The valence band potential of the photocatalyst is too low, so that the gathered holes directly photodegrade rhodamine B and cannot generate OH, and the result is consistent with an active species capture experiment, which shows that OH is not the main active substance for degrading the rhodamine B in the current photocatalytic system. In conclusion, the electric field formed by the electrostatic force, the energy level difference and the Schottky junction and the local magnetic field formed by the plasma Ag effectively reduce the recombination of light-induced electrons and holes and delay the recombination of electron and hole pairsThe recombination rate is improved, thereby improving the Ag-BiVO 4 -g-C 3 N 4 Photocatalytic performance of heterojunction photocatalysts.
The above description is only one embodiment of the present invention, and not all or only one embodiment, and any equivalent alterations to the technical solutions of the present invention, which are made by those skilled in the art through reading the present specification, are covered by the claims of the present invention.
Claims (6)
1. The preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst is characterized by comprising the following steps of:
step 1, firstly exposing BiVO of (010) crystal face 4 Adding the powder into deionized water, uniformly mixing, performing ultraviolet irradiation for 0.5-1 h to obtain a mixed system A, and adding AgNO into the mixed system A 3 Then evenly mixing the mixture under the irradiation of ultraviolet light, AgNO 3 And said BiVO 4 The mass ratio of the powder is (1-3): 10 to obtain a mixed system B, and finally, sequentially washing and drying the precipitate in the mixed system B to obtain Ag/BiVO 4 Powder;
firstly, melamine and HNO 3 Mixing the solution with ethanol, evaporating to dryness, and HNO 3 HNO in solution 3 The concentration of (a) is 1-2 mol/L, melamine and HNO 3 And ethanol in a mass ratio of 1: 20: (7-10) obtaining a precursor, preserving the heat of the precursor for 5-6 h at 560-580 ℃, then cooling to room temperature, then heating to 480-500 ℃, and preserving the heat for 3-4 h to obtain g-C 3 N 4 Powder of g-C 3 N 4 The powder is evenly mixed in deionized water to obtain g-C 3 N 4 A solution;
step 2, mixing Ag/BiVO 4 Uniformly mixing the powder in deionized water, and then carrying out ultraviolet irradiation for 0.5-1 h, wherein the powder is Ag/BiVO 4 The mass ratio of the powder to the deionized water is 1:100 to obtain a mixed system C, and mixing the mixed system C with g-C 3 N 4 After the solution is uniformly mixed, ultraviolet illumination is carried out for 2.5 to 3.5 hours, g-C 3 N 4 And Ag/BiVO 4 The mass ratio of (A) to (B) is 11:40 to obtain a mixed system D;
and 3, sequentially washing and drying the powder in the mixed system D to obtain the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst.
2. The method for preparing silver/bismuth vanadate/carbon nitride heterojunction photocatalyst according to claim 1, wherein the system A and AgNO are mixed in the step 1 3 The materials are uniformly mixed in an ultrasonic stirring mode, and the ultrasonic stirring time is 3-5 hours.
3. The method for preparing silver/bismuth vanadate/carbon nitride heterojunction photocatalyst according to claim 1, wherein in the step 1, melamine and HNO are mixed 3 And uniformly mixing the solution and ethanol, and steaming at 70-90 ℃ for 2-5 h.
4. The method for preparing a silver/bismuth vanadate/carbon nitride heterojunction photocatalyst according to claim 1, wherein in the step 1, the precursor is heated to 560-580 ℃ at a heating rate of 4-7 ℃/min, and then heated to 480-500 ℃ at a heating rate of 6-10 ℃/min.
5. A silver/bismuth vanadate/carbon nitride heterojunction photocatalyst obtained by the preparation method of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst according to any one of claims 1 to 4.
6. The use of the silver/bismuth vanadate/carbon nitride heterojunction photocatalyst according to claim 5 in degrading organic pollutants within the range of 200-1500 nm.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103232458A (en) * | 2013-04-25 | 2013-08-07 | 大连理工大学 | Method for preparing graphite phase carbon nitride material with monatomic layer structure |
| CN106944118A (en) * | 2017-03-10 | 2017-07-14 | 湖南大学 | Composite bismuth vanadium photocatalyst that silver and phospha graphite phase carbon nitride nanometer sheet are modified jointly and its preparation method and application |
| CN108554438A (en) * | 2018-05-30 | 2018-09-21 | 陕西科技大学 | A kind of g-C3N4- Ag crystal faces BiVO4Z-type structure photochemical catalyst and preparation method thereof |
| CN108671951A (en) * | 2018-04-17 | 2018-10-19 | 浙江工商大学 | A kind of nitridation carbon composite photocatalyst and its preparation method and application |
| CN108927193A (en) * | 2018-07-05 | 2018-12-04 | 无锡江南电缆有限公司 | A kind of visible light-responded photochemical catalyst and preparation method thereof |
| JP2019166448A (en) * | 2018-03-22 | 2019-10-03 | 株式会社豊田中央研究所 | Volatile organic compound decomposition photocatalyst body and production method thereof, and volatile organic compound decomposition method |
-
2020
- 2020-09-22 CN CN202011003371.7A patent/CN111992239B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103232458A (en) * | 2013-04-25 | 2013-08-07 | 大连理工大学 | Method for preparing graphite phase carbon nitride material with monatomic layer structure |
| CN106944118A (en) * | 2017-03-10 | 2017-07-14 | 湖南大学 | Composite bismuth vanadium photocatalyst that silver and phospha graphite phase carbon nitride nanometer sheet are modified jointly and its preparation method and application |
| JP2019166448A (en) * | 2018-03-22 | 2019-10-03 | 株式会社豊田中央研究所 | Volatile organic compound decomposition photocatalyst body and production method thereof, and volatile organic compound decomposition method |
| CN108671951A (en) * | 2018-04-17 | 2018-10-19 | 浙江工商大学 | A kind of nitridation carbon composite photocatalyst and its preparation method and application |
| CN108554438A (en) * | 2018-05-30 | 2018-09-21 | 陕西科技大学 | A kind of g-C3N4- Ag crystal faces BiVO4Z-type structure photochemical catalyst and preparation method thereof |
| CN108927193A (en) * | 2018-07-05 | 2018-12-04 | 无锡江南电缆有限公司 | A kind of visible light-responded photochemical catalyst and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Synergetic combination of 1D-2D g-C3N4 heterojunction nanophotocatalyst for hydrogen production via water splitting under visible light irradiation;Saeed Mahzoon et al.;《Renewable Energy》;20180430(第127期);摘要、第434页右栏第2段、第436页左栏倒数第1段、第441-442页4结论 * |
| 硝酸活化三聚氰胺前驱体对g-C3N4结构和可见光催化性能的影响;叶仕雄等;《无机化学学报》;20200131;第36卷(第1期);摘要，第3页第4段，第9页左栏倒数第1段、右栏第1段 * |
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