CN111987911A - DCDC converter based on gallium nitride - Google Patents
DCDC converter based on gallium nitride Download PDFInfo
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- CN111987911A CN111987911A CN202010514063.4A CN202010514063A CN111987911A CN 111987911 A CN111987911 A CN 111987911A CN 202010514063 A CN202010514063 A CN 202010514063A CN 111987911 A CN111987911 A CN 111987911A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
- H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
- H02M3/33592—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer having a synchronous rectifier circuit or a synchronous freewheeling circuit at the secondary side of an isolation transformer
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The invention provides a DCDC converter based on gallium nitride, which comprises an input filter circuit, a power conversion circuit, a GaN switching tube circuit, a switch driving circuit and an output filter circuit, wherein the input filter circuit is used for filtering an input power supply to obtain a first power supply; the switch driving circuit is connected with the GaN switch tube circuit and used for providing a driving control signal for the GaN switch tube circuit, and controlling the switch of a GaN switch tube in the GaN switch tube circuit at a certain frequency and duty ratio so as to convert the first power supply and obtain a second power supply; the input side of the power conversion circuit is respectively connected with the output end of the input filter circuit and the GaN switching tube circuit, and the power conversion circuit is used for performing voltage conversion on the second power supply to obtain a third power supply; the input end of the output filter circuit is connected with the output side of the power conversion circuit, and the output filter circuit is used for filtering the third power supply to obtain the output power supply.
Description
Technical Field
The invention relates to the technical field of switching power supplies, in particular to a DCDC converter based on gallium nitride.
Background
At present, 60V to 72V battery packs are more and more popular, for example, the battery packs are commonly used in electric vehicles, the battery voltage of the electric vehicles is generally 60V to 72V, and other electric devices except for motors on the electric vehicles need 12V. Therefore, the conversion of the power source by the DCDC converter is required. The traditional DCDC converter with the power has the defects of small frequency, large volume and the like.
Disclosure of Invention
In order to solve the technical problems, the invention provides a DCDC converter based on gallium nitride, which can greatly improve the switching frequency, reduce the volume, realize light design and reduce the switching loss, thereby reducing the heat productivity and improving the efficiency.
The technical scheme adopted by the invention is as follows:
a DCDC converter based on gallium nitride comprises an input filter circuit, a power conversion circuit, a GaN switching tube circuit, a switch driving circuit and an output filter circuit, wherein the input end of the input filter circuit is used as the input end of the DCDC converter, and the input filter circuit is used for filtering an input power supply to obtain a first power supply; the switch driving circuit is connected with the GaN switch tube circuit and used for providing a driving control signal for the GaN switch tube circuit, and controlling the switch of a GaN switch tube in the GaN switch tube circuit at a certain frequency and duty ratio so as to convert the first power supply and obtain a second power supply; the input side of the power conversion circuit is respectively connected with the output end of the input filter circuit and the GaN switching tube circuit, and the power conversion circuit is used for performing voltage conversion on the second power supply to obtain a third power supply; the input end of the output filter circuit is connected with the output side of the power conversion circuit, the output end of the output filter circuit is used as the output end of the DCDC converter, and the output filter circuit is used for filtering the third power supply to obtain an output power supply.
The DCDC converter based on gallium nitride further comprises a current-voltage detection circuit and a voltage-stabilizing current-limiting circuit, wherein the current-voltage detection circuit is connected with the output side of the power conversion circuit or the output end of the output filter circuit, and is used for detecting a voltage-current signal of the third power supply; the voltage stabilizing and current limiting circuit is respectively connected with the current and voltage detection circuit and the switch driving circuit, and the voltage stabilizing and current limiting circuit is used for performing voltage stabilizing and current limiting processing on the voltage and current signals detected by the current and voltage detection circuit and then transmitting the voltage and current signals to the switch driving circuit, so that the switch driving circuit can generate the driving control signal according to the synthesized voltage signals after the voltage stabilizing and current limiting processing.
The input filter circuit and the output filter circuit both comprise filter inductors and filter capacitors.
The power conversion circuit includes a transformer.
The transformer comprises an EE magnetic core.
The switch driving circuit comprises a UC3842 chip, and the GaN switch tube adopts a GaNFast NV6113 chip.
The transformer comprises an auxiliary winding, and the auxiliary winding is connected with the UC3842 chip and the GaNFast NV6113 chip respectively to supply power to the UC3842 chip and the GaNFast NV6113 chip.
The voltage stabilizing current limiting circuit comprises a TSM103 chip.
And a photoelectric coupler is connected between the TSM103 chip and the UC3842 chip so as to transmit a synthesized voltage signal after voltage-stabilizing current-limiting processing through the photoelectric coupler.
The invention has the beneficial effects that:
according to the DCDC converter based on gallium nitride, the GaN switching tube circuit and the corresponding control and driving circuits are arranged, so that the switching frequency can be greatly improved, the size is reduced, the lightweight design is realized, the switching loss can be reduced, the heat productivity is reduced, and the efficiency is improved.
Drawings
FIG. 1 is a block diagram of a GaN-based DCDC converter according to an embodiment of the invention;
FIG. 2 is a block diagram of a GaN-based DCDC converter according to an embodiment of the invention;
FIG. 3 is a circuit topology diagram of a GaN-based DCDC converter according to an embodiment of the invention;
FIG. 4 is a circuit topology diagram of an input filter circuit according to one embodiment of the present invention;
FIG. 5 is a schematic diagram of an internal structure of a GaNFast NV6113 chip according to an embodiment of the invention;
FIG. 6 is a circuit topology diagram of a GaN switching tube circuit according to an embodiment of the invention;
FIG. 7 is a circuit topology diagram of a switch driver circuit according to one embodiment of the present invention;
FIG. 8 is a circuit topology diagram of a power conversion circuit of one embodiment of the present invention;
FIG. 9 is a circuit topology diagram of an RC snubber circuit in accordance with one embodiment of the present invention;
FIG. 10 is a circuit topology diagram of an output filter circuit of one embodiment of the present invention;
fig. 11 is a circuit topology diagram of a current-voltage detection circuit and a voltage regulation current limiting circuit according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the DCDC converter based on gallium nitride according to the embodiment of the present invention includes an input filter circuit 10, a power conversion circuit 20, a GaN switch tube circuit 30, a switch driver circuit 40, and an output filter circuit 50. The input end of the input filter circuit 10 is used as the input end of the DCDC converter, and the input filter circuit 10 is used for performing filtering processing on an input power supply to obtain a first power supply; the switch driving circuit 40 is connected with the GaN switch tube circuit 30, and the switch driving circuit 40 is used for providing a driving control signal for the GaN switch tube circuit 30, controlling the on/off of a GaN switch tube in the GaN switch tube circuit 30 with a certain frequency and a certain duty ratio, so as to convert the first power supply and obtain a second power supply; the input side of the power conversion circuit 20 is respectively connected with the output end of the input filter circuit 10 and the GaN switch tube circuit 30, and the power conversion circuit 20 is used for performing voltage conversion on the second power supply to obtain a third power supply; the input end of the output filter circuit 50 is connected to the output side of the power conversion circuit 20, the output end of the output filter circuit 50 is used as the output end of the DCDC converter, and the output filter circuit 50 is used for filtering the third power supply to obtain the output power supply.
Further, as shown in fig. 2, the DCDC converter based on gallium nitride further includes a current-voltage detection circuit 60 and a voltage stabilization current limiting circuit 70. The current-voltage detection circuit 60 is connected to the output side of the power conversion circuit 20 or the output end of the output filter circuit 50, that is, the current-voltage detection circuit 60 is connected to the rear stage of the power conversion circuit 20, and the current-voltage detection circuit 60 is configured to detect a voltage-current signal of the third power supply; the voltage stabilizing and current limiting circuit 70 is connected to the current and voltage detecting circuit 60 and the switch driving circuit 40, respectively, and the voltage stabilizing and current limiting circuit 70 is configured to perform voltage stabilizing and current limiting processing on the voltage and current signals detected by the current and voltage detecting circuit 60 and transmit the processed voltage and current signals to the switch driving circuit 40, so that the switch driving circuit 40 generates the driving control signal according to the synthesized voltage signals after the voltage stabilizing and current limiting processing.
In one embodiment of the present invention, input filter circuit 10 and output filter circuit 50 each include a filter inductor and a filter capacitor.
Specifically, as shown in fig. 3 and 4, the input filter circuit 10 includes a common-mode inductor L1 and an electrolytic capacitor C2, and both ends of the common-mode inductor L1 are further connected to the ground through the safety capacitors CY01 and CY02, respectively. The input end of the input filter circuit 10 is used as the input end of the DCDC converter and is connected to a battery or a power grid, direct current in the range of 60 to 90V is input, and the diode D1 connected to the input end can prevent the reverse flow of the current. The input filter circuit 10 can suppress electromagnetic noise and clutter signals of the input power supply, reduce interference, and prevent interference of high-frequency clutter of the power supply to the power grid if the input terminal is connected to the power grid.
In an embodiment of the present invention, the switch driving circuit 40 includes a UC3842 chip, and the GaN switch tube adopts a GaN switch NV6113 chip.
Specifically, a COMP pin of the UC3842 chip is used for loop compensation, a FB pin is used for voltage feedback, SEN is used for current sampling, CT is connected with a reference voltage VREF through resistors R33 and R32 and is grounded through a capacitor C19, and the oscillation evaluation rate of output and the maximum duty ratio can be changed by adjusting the sizes of the resistor R33 and the capacitor C19. The maximum operating frequency of the UC3842 chip is 500kHz, and 450k is used up to this point due to the difference of the manufacturing process of each chip.
The internal structure of the GaN cast NV6113 chip is shown in fig. 5, and the GaN cast NV6113 chip is internally integrated with a power integrated circuit of gallium nitride, and includes a Vcc pin for supplying power, an input voltage range of 10V to 24V, a PWM pin for square wave input, and a Vdd pin, which is a setting pin for gate drive on current, Dz is a setting pin for gate drive voltage, D is equivalent to the drain of a common MOS, and S is the source. The frequency of the GaNFast NV6113 chip can reach 2MHz at most.
As shown in fig. 3, 6 and 7, the PWM pin of the gancast NV6113 chip is connected to the OUT pin of the UC3842 chip, so as to obtain a square wave, thereby controlling the on/off of the switching tube. Standard current sensing resistors R29-R31 are connected between the source electrode of the GaNFast NV6113 chip and the ground, and the current flowing through the GaNFast NV6113 chip can be detected. The pins PWM, Vdd and Dz of the GaNFast NV6113 chip are connected with a capacitor or a voltage stabilizing diode and connected with the source electrode and the ground. The capacitor C5 can prevent false triggering caused by high frequency voltage spike. And a Sen formed by an anode of the voltage stabilizing diode D7 and one ends of capacitors C5 and C6 is connected to a Sen pin of the GaNFast NV6113 chip.
In one embodiment of the present invention, as shown in fig. 3 and 8, the power conversion circuit 20 includes a transformer, that is, the DCDC converter of the embodiment of the present invention is an isolated converter.
As shown in fig. 3 and 8, the topology of the power conversion circuit 20 according to the embodiment of the present invention is a flyback topology. The direct current which is converted can be transmitted to the secondary side after being reduced in voltage through the turn ratio of the winding coil of the transformer. During the conduction period of the switching tube, the transformer stores energy, and the load current is provided by the output filter capacitor. During the off period of the switch tube, the energy stored in the transformer is converted to the load, so as to provide load current, charge the output filter capacitor and compensate the energy lost during the on period of the switch tube.
Specifically, the input voltage of the power conversion circuit 20 is 60 to 90V, and the output voltage is 12.6V. The efficiency eta of the transformer is initially set to be 90%, and the frequency of the transformer is designed to be 450kHz because the embodiment of the invention is a high-frequency converter.
In addition, as shown in fig. 3 and 8, the transformer includes an auxiliary winding, which is connected to the UC3842 chip and the gan cast NV6113 chip, respectively, to provide a VCC1 power output to power the UC3842 chip and the gan cast NV6113 chip.
The output power of the transformer is:
the secondary side diode has voltage drop due to transformer loss, and in practical process, the power design is often larger, so that the design is 200W.
Selecting the magnetic flux density as Bw0.2T, window usage KwInitially set at 45%, the temperature rise range of the magnetic core is set at 25 ℃, and X is-0.125.
From the temperature it can be calculated:
Kj＝70*Δt0.545＝70*250.545≈400
ap represents the product of the core effective cross-sectional area and the window area,
based on the Ap value, an EE core, such as an EE10 core, can be selected, the core having a window area a around which a wire can be woundwIs 23.7cm2Effective cross-sectional area of magnetic core Ae12.1cm2, Ap value 0.0287.
The current density was:
J＝Kj(AwAe)X＝400*(23.7*10-2*12.1*10-2)-0.125＝6.23A/cm2
the number of primary side turns is:
Tomax＝Dmax*T＝0.45*2.22＝0.999
the number of secondary turns is:
since the auxiliary winding mainly supplies power to the UC3842 chip and the gan blast NV6113 chip, the starting voltage of the UC3842 chip is 16V, and the operating voltage of the gan blast NV6113 chip is 10 to 24V, the output voltage can be set to 18V.
The number of auxiliary winding turns is therefore:
the wire diameter of the primary winding is as follows:
the wire diameter of the secondary winding is as follows:
the diameter of the auxiliary winding wire is 0.2mm2。
Therefore, the frequency of the transformer reaches 450kHz, the volume is obviously reduced to about 1.5cm3The miniature transformer can reduce the volume of the whole DCDC converter
As shown in fig. 3 and 9, an RC snubber circuit is further disposed between the power conversion circuit 20 and the output filter circuit 50, and the RC snubber circuit is formed by connecting two resistors R9 and R10 in parallel and connecting a capacitor C7 in series, so that the resistor in series with the capacitor can play a damping role because the circuit always has inductance, and it can prevent the devices from being damaged by overvoltage generated at two ends of the capacitor due to oscillation in the circuit R, L, C during the transition process, thereby protecting the lower zener diodes D8 and D9.
As shown in fig. 3 and 10, the output filter circuit 50 includes a common mode inductor L2 and electrolytic capacitors C8 to C11, and one end of the common mode inductor L2 is further connected to the ground through a ballast capacitor CY 05. The output end of the output filter circuit 50 is connected to a load as the output end of the DCDC converter, and outputs a direct current of 12V or 6A. The function and operation of the input filter circuit 10 are similar to those of the input filter circuit described above, and are not described in detail herein.
As shown in fig. 3 and 11, the voltage stabilizing and current limiting circuit includes a TSM103 chip, and as shown in fig. 3, 11 and 7, a photocoupler is connected between the TSM103 chip and the UC3842 chip, so as to transmit the resultant voltage signal after the voltage stabilizing and current limiting process through the photocoupler. The TSM103 chip can achieve constant current and constant voltage, two operational amplifiers and a voltage reference device are integrated IN the TSM103 chip, a VCC pin is a power supply pin which is directly connected to a VCC2 power supply output provided by the output side of the power conversion circuit 20, pins IN1+, IN1 and OUT1 are an operational amplifier and a voltage reference device to form an ideal voltage controller, a resistor R16 and a resistor R22 are connected to the output end of the DCDC converter, a pin IN1 is a voltage provided for the chip interior, the voltage is stabilized at 2.5V through the voltage reference device IN the chip interior, one path of R22 detects the output voltage, the voltage is divided through R24 and R25, the input of the pin IN1+ is compared with the reference voltage of the interior 2.5V, so as to adjust the high and low level output of the pin OUT1, the pins IN2+, IN2 and OUT2 are an operational amplifier, the operational amplifier is matched with the voltage reference device integrated IN the interior and an external resistor to play a, the IN2+ pin divides voltage through resistors R17, R18, and GND to get a 2.5V reference voltage from the outside. The R16 path is current detection, when the current fluctuates, the R16 resistance voltage changes, so that the voltage obtained by the IN 2-is compared with the 2.5V reference voltage of the IN2+ by the internal operational amplifier of the chip, and the output high and low level of the OUT2 pin is adjusted. The high and low levels output by the pin OUT2 and the pin OUT1 change the on-off of a light emitting diode in the photoelectric coupler, so that the on-off of a triode is changed. As shown in fig. 7, the triode inside the photocoupler is connected to the COMP and FB pins of the UC3842 chip, and the potential of the COMP pin is changed by turning on or off the triode, so that the duty ratio of the OUT pin is changed, and the GaN switch tube is driven. The SEN pin is connected with the source electrode of the GaN switching tube and is provided with a voltage proportional to the current of the inductor, so that the duty ratio of the OUT pin of the output pin is changed. Therefore, voltage and current feedback regulation of the DCDC converter is realized.
In addition, the electrolytic capacitor C2 in the input filter circuit 10 serves as a start-up capacitor, the DCDC converter is charged at the start moment, C2 is charged, and then, after the DCDC converter is fully charged, the DCDC converter is stopped, the C2 discharges to supply power to the UC3842 chip and the gan fas NV6113 chip from the power supply terminal of VCC1, the switching tube is turned on, the DCDC converter operates formally, and then the UC3842 chip and the gan fas NV6113 chip are both supplied with power by the auxiliary winding of the transformer.
In summary, according to the DCDC converter based on gallium nitride of the embodiment of the present invention, by providing the GaN switching tube circuit and the corresponding control and driving circuits, the switching frequency can be greatly increased, the size can be reduced, the light design can be realized, and the switching loss can be reduced, so that the heat generation amount can be reduced, and the efficiency can be improved.
In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. The meaning of "plurality" is two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. A DCDC converter based on gallium nitride is characterized by comprising an input filter circuit, a power conversion circuit, a GaN switching tube circuit, a switch driving circuit and an output filter circuit,
the input end of the input filter circuit is used as the input end of the DCDC converter, and the input filter circuit is used for filtering an input power supply to obtain a first power supply;
the switch driving circuit is connected with the GaN switch tube circuit and used for providing a driving control signal for the GaN switch tube circuit, and controlling the switch of a GaN switch tube in the GaN switch tube circuit at a certain frequency and duty ratio so as to convert the first power supply and obtain a second power supply;
the input side of the power conversion circuit is respectively connected with the output end of the input filter circuit and the GaN switching tube circuit, and the power conversion circuit is used for performing voltage conversion on the second power supply to obtain a third power supply;
the input end of the output filter circuit is connected with the output side of the power conversion circuit, the output end of the output filter circuit is used as the output end of the DCDC converter, and the output filter circuit is used for filtering the third power supply to obtain an output power supply.
2. The gallium nitride-based DCDC converter according to claim 1, further comprising a current-voltage detection circuit and a regulated current-limiting circuit, wherein,
the current and voltage detection circuit is connected with the output side of the power conversion circuit or the output end of the output filter circuit and is used for detecting a voltage and current signal of the third power supply;
the voltage stabilizing and current limiting circuit is respectively connected with the current and voltage detection circuit and the switch driving circuit, and the voltage stabilizing and current limiting circuit is used for performing voltage stabilizing and current limiting processing on the voltage and current signals detected by the current and voltage detection circuit and then transmitting the voltage and current signals to the switch driving circuit, so that the switch driving circuit can generate the driving control signal according to the synthesized voltage signals after the voltage stabilizing and current limiting processing.
3. The gallium nitride-based DCDC converter according to claim 2, wherein the input filter circuit and the output filter circuit each comprise a filter inductance and a filter capacitance.
4. The gallium nitride-based DCDC converter according to claim 2, wherein the power conversion circuit comprises a transformer.
5. The gallium nitride-based DCDC converter of claim 4, wherein said transformer comprises an EE core.
6. The DCDC converter based on gallium nitride of claim 5, wherein said switch driving circuit comprises a UC3842 chip, and said GaN switch tube is a GaNFast NV6113 chip.
7. The gallium nitride-based DCDC converter of claim 6, wherein said transformer comprises an auxiliary winding, and said auxiliary winding is connected to said UC3842 chip and said GaNFast NV6113 chip respectively, for supplying power to said UC3842 chip and said GaNFast NV6113 chip.
8. The gallium nitride-based DCDC converter of claim 6, wherein said regulated current limiting circuit comprises a TSM103 chip.
9. The DCDC converter based on GaN of claim 8, wherein an opto-coupler is connected between the TSM103 chip and the UC3842 chip, so as to transmit the resultant voltage signal after the voltage stabilization and current limitation processing through the opto-coupler.
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| CN112928808A (en) * | 2021-01-28 | 2021-06-08 | 湖南炬神电子有限公司 | GaN charger control circuit |
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