CN111987181B - Solar spectrum light splitting-heat absorbing film based on one-dimensional photonic crystal heterostructure - Google Patents
Solar spectrum light splitting-heat absorbing film based on one-dimensional photonic crystal heterostructure Download PDFInfo
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- CN111987181B CN111987181B CN202010893234.9A CN202010893234A CN111987181B CN 111987181 B CN111987181 B CN 111987181B CN 202010893234 A CN202010893234 A CN 202010893234A CN 111987181 B CN111987181 B CN 111987181B
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- 238000001228 spectrum Methods 0.000 title claims abstract description 65
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- 229910052681 coesite Inorganic materials 0.000 claims abstract description 28
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 28
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 28
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 28
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 28
- 239000000919 ceramic Substances 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims abstract description 21
- 239000002184 metal Substances 0.000 claims abstract description 21
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 claims description 4
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 239000011195 cermet Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910002076 stabilized zirconia Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 238000005070 sampling Methods 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 238000002310 reflectometry Methods 0.000 abstract description 15
- 238000010248 power generation Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
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- 229910052727 yttrium Inorganic materials 0.000 description 2
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
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Abstract
The invention provides a solar spectrum light splitting-heat absorbing film based on a one-dimensional photonic crystal heterostructure, which comprises an absorption coating and a one-dimensional photonic crystal heterostructure light splitter, wherein the one-dimensional photonic crystal heterostructure light splitter is positioned on the absorption coating; the absorption coating comprises a metal ceramic layer, and the one-dimensional photonic crystal heterostructure light splitter is based on Si/SiO2A heterostructure multilayer film of photonic crystals. By adopting the technical scheme of the invention, the solar spectrum can be effectively divided into a photovoltaic application waveband and two photo-thermal application wavebands, wherein the solar energy of the photovoltaic waveband is used for photovoltaic power generation, and the solar energy of the photo-thermal waveband is used for heat collection power generation, thereby providing a device basis for comprehensive utilization of the full-spectrum solar energy; the reflectivity of the photovoltaic application waveband can be effectively increased on the premise of not increasing the one-dimensional photonic crystal repeating unit, and the reflectivity of two photo-thermal wavebands can be inhibited from being improved.
Description
Technical Field
The invention belongs to the technical field of new energy, and particularly relates to a solar spectrum light splitting-heat absorbing film based on a one-dimensional photonic crystal heterostructure.
Background
Solar energy is used as a renewable energy source with abundant content, is effectively utilized, and can provide an effective solution for the energy problem facing the human society. The photovoltaic and photo-thermal mixed utilization system based on solar spectrum splitting divides sunlight with two wave bands of solar spectrum 200nm-725nm and 1100nm-2500nm into 'photo-thermal wave bands' to be utilized by a solar heat collection power generation system, and divides the wave band of 725nm-1100nm into 'photovoltaic wave bands' to be used by a solar cell for photovoltaic power generation. The solar energy utilization mode can effectively avoid the challenges of a spectroscope system and a thermal battery system, so that the high-efficiency utilization of full-spectrum solar energy is realized, and the stable electric energy output can be realized by utilizing cheap and convenient heat storage. This is one of the most promising ways to achieve efficient hybrid utilization of solar energy. For a photovoltaic-photothermal mixing system based on solar spectrum splitting, a light splitting-heat absorbing film capable of realizing solar spectrum splitting is an important device, and the device is required to have the reflectivity close to 0 in two wave bands of 200nm-725nm and 1100nm-2500nm and the reflectivity close to 100% in the wave band of 725nm-1100nm for incident sunlight.
At present, a light splitting-heat absorbing film for realizing solar spectrum splitting is mainly realized by combining a periodic one-dimensional photonic crystal multilayer film or an aperiodic multilayer film with a selective heat absorbing film. However, the former has a problem that the reflectivity of two solar photo-thermal application bands is difficult to be reduced; in the latter case, the reflectivity of the photovoltaic application band is difficult to be improved to a desired level, and an increase in the incident angle results in a narrowing of the high-reflection region. Therefore, the four-waveband light splitting-heat absorbing film device which is low in design and preparation cost, stable in performance and capable of efficiently realizing solar light splitting comprehensive utilization is the consideration direction of the light splitting-heat absorbing film for solar spectrum splitting.
Disclosure of Invention
Aiming at the technical problems, the invention discloses a solar spectrum light splitting-heat absorbing film based on a one-dimensional photonic crystal heterostructure, which effectively increases the reflectivity of a photovoltaic application waveband and simultaneously inhibits the improvement of the reflectivity of two photo-thermal wavebands.
In contrast, the technical scheme adopted by the invention is as follows:
a solar spectrum light splitting-heat absorbing film based on a one-dimensional photonic crystal heterostructure comprises an absorption coating and a one-dimensional photonic crystal heterostructure light splitter, wherein the one-dimensional photonic crystal heterostructure light splitter is positioned on the absorption coating; the absorption coating comprises a metal ceramic layer, and the one-dimensional photonic crystal heterostructure light splitter is a heterostructure multilayer film based on a one-dimensional photonic crystal structure.
As a further improvement of the invention, the one-dimensional photonic crystal heterostructure optical splitter comprises a one-dimensional photonic crystal and a heterostructure layer positioned on the upper surface of the one-dimensional photonic crystal, and the material of the heterostructure layer comprises yttrium stabilized zirconia and CeO2、TiO2、Ta2O5、HfO2Or V2O5And the like, including but not limited to these. The effect required by application can be achieved by adding a heterostructure layer on the one-dimensional photonic crystal, but the heterostructure layer is not limited to one layer.
By adopting the technical scheme, the absorption of sunlight is enhanced by using a bottom layer absorption layer (which can be a metal ceramic layer or other absorption layers with sunlight absorption capacity), limited one-dimensional photonic crystal sub-bands are used for absorbing partial sunlight, and a heterostructure layer is constructed by using materials different from photonic crystal structure units to improve the reflectivity of a photonic band gap (high-reflectivity frequency band).
As a further improvement of the invention, the one-dimensional photonic crystal is a multi-period one-dimensional photonic crystal.
As a further improvement of the invention, the one-dimensional photonic crystal comprises one-dimensional Si/SiO2Photonic crystal of base structure or one-dimensional TiO2/SiO2Photonic crystals of a base structure, but not limited to this structure.
As a further improvement of the invention, the material of the metal ceramic layer comprises Ti-SiO2、W-SiO2、W-Al2O3、MoSi2–SiO2But is not limited to this structure. Other absorbing layers with solar absorption capability may also be used, such as solar spectrum selective absorbing coatings.
As a further improvement of the invention, the thickness of the metal ceramic layer is 30-250 nm.
As a further improvement of the invention, the Si/SiO of each period2In the basic one-dimensional photonic crystal, the thickness of the Si layer is 30-100nm, and SiO is2The thickness of the layer is 90-260 nm.
As a further improvement of the invention, the heterostructure layer can be made of materials different from the periodic unit, and the solar spectrum light splitting-heat absorbing film of the one-dimensional photonic crystal heterostructure is constructed based on the same light splitting and photonic band gap reflectivity mechanisms.
As a further improvement of the invention, the substrate of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure comprises a mechanically polished stainless steel material, but is not limited to a ceramic substrate with higher temperature resistance and better heat conduction.
Further, the substrate of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure is made of a mechanically polished 304 stainless steel material.
The invention also discloses a preparation method of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure, which comprises the following steps:
step S1, cleaning the surface of the substrate and fixing;
step S2, bias cleaning is carried out on the substrate, the condition is argon environment, the air pressure is about 0.6-0.8Pa, and the cleaning time is 3-5 min;
step S3, sputtering a metal ceramic layer, a multi-period one-dimensional photonic crystal and a heterostructure layer in sequence in an argon environment;
and step S4, after the deposition is finished, placing the film in a vacuum chamber for more than 20min, and sampling.
In a further improvement of the present invention, in step S2, the bias cleaning condition is an argon atmosphere, the air pressure is about 0.6 to 0.8Pa, and the cleaning time is 3 to 5 min.
As a further improvement of the present invention, in step S3, the pressure of the sputtering gas is 0.3-0.5 Pa.
As a further improvement of the invention, in step S3, each layer and the heterostructure layer in the multi-period one-dimensional photonic crystal are subjected to radio frequency sputtering, and the power density is 3.00-4.00W-cm-2。
Further, the multicycle one-dimensional photonic crystal is multicycle Si/SiO2A base one-dimensional photonic crystal.
As a further improvement of the invention, the metal ceramic layer is deposited by adopting direct current and radio frequency co-sputtering, and the direct current sputtering power density is 4.00-5.50W-cm-2The power density of the radio frequency sputtering is 1.50-2.00 W.cm-2The metal ceramic layer is made of Ti-SiO2Ti and SiO in the cermet layer2The volume ratio of (A) to (B) is 1: 2-3.
Compared with the prior art, the invention has the beneficial effects that:
firstly, by adopting the technical scheme of the invention, the solar spectrum can be effectively split into a photovoltaic application band (725-.
Secondly, the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure has high reflectivity of a photovoltaic application waveband, and can reach 92 percent; the average reflectivity of the two photothermal application wave bands is low and is not more than 25% on average; through a layer of heterostructure layer, the reflectivity of a photovoltaic application waveband can be effectively increased on the premise of not increasing a one-dimensional photonic crystal repeating unit, and the reflectivity of two photo-thermal wavebands is inhibited from being improved.
Drawings
Fig. 1 is a schematic structural diagram of a solar spectrum light splitting-heat absorbing film S2 based on a one-dimensional photonic crystal heterostructure according to an embodiment of the present invention.
Fig. 2 is a measured reflection spectrum of the solar spectrum light splitting-heat absorbing film S2 based on the one-dimensional photonic crystal heterostructure according to the embodiment of the present invention.
FIG. 3 shows an embodiment of the present invention using YSZ and other transition metal oxides CeO2、TiO2、Ta2O5、HfO2、V2O5And (3) a simulated reflection spectrum contrast diagram of the one-dimensional photonic crystal heterostructure constructed as the heterostructure layer.
Detailed Description
Preferred embodiments of the present invention are described in further detail below.
Example 1
As shown in FIG. 1, a solar spectrum light splitting-heat absorbing film S2 based on a one-dimensional photonic crystal heterostructure comprises Si/SiO2A solar spectrum light splitting-heat absorbing film S1 based on a one-dimensional photonic crystal structure and a heterostructure layer positioned on Si/SiO2Solar spectrum based on one-dimensional photonic crystal structureOn the surface of the spectroscopic-endothermic film S1, in this example, the material used for the heterostructure layer is Yttrium Stabilized Zirconia (YSZ). The Si/SiO2The material of the solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure is metal Ti, dielectric Si and SiO2The substrate is mechanically polished stainless steel 304. The Si/SiO2The solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure sequentially comprises a metal ceramic layer and five periods of Si/SiO from bottom to top2A base one-dimensional photonic crystal. The metal ceramic layer is made of Ti-SiO2. The thickness of the metal ceramic layer is 30-250 nm. Si/SiO per period2In the basic one-dimensional photonic crystal, the thickness of the Si layer is 30-100nm, and SiO is2The thickness of the layer is 100-260 nm.
Si/SiO2The substrates of the solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure and the solar spectrum light splitting-heat absorbing film S2 based on the one-dimensional photonic crystal heterostructure are both mechanically polished stainless steel 304, the absorbing coating is deposited by utilizing a high-vacuum multi-target magnetron sputtering system, the purity of each target is Ti (99.95%), SiO2(99.99%), Si (99.99%). In the cermet layer, Ti and SiO2The size of each target is phi 50.8mm multiplied by 4mm and phi 72.6mm multiplied by 5mm respectively, and Si and SiO in the one-dimensional photonic crystal optical splitter and the heterostructure layer2And YSZ each having a target size of phi 50.8mm by 4mm, and a stainless steel substrate having a size of 20mm by 20mm2. During deposition, Si, SiO2And YSZ is radio frequency sputtering with power density of 3.00-4.00 W.cm-2，Ti-SiO2The metal ceramic is sequentially subjected to direct current and radio frequency co-sputtering deposition, and the sputtering power densities of the metal ceramic are respectively 4.00-5.50W-cm-2And 1.50-2.00 W.cm-2，Ti：SiO2The volume ratio is 1:2 to 1: 3.
the preparation process comprises the following steps:
1. scrubbing the mechanically polished stainless steel by using acetone and absolute ethyl alcohol in sequence, and fixing a substrate;
2. vacuum pumping with background vacuum less than-4 x 10-4Pa；
3. Performing bias cleaning on the substrate in an argon environment at the air pressure of about 0.6-0.8Pa for 3-5 min;
4. starting sputtering, and sequentially sputtering a metal ceramic layer, a one-dimensional photonic crystal beam splitter and a heterostructure layer under the argon environment and with the air pressure of about 0.3-0.5 Pa.
5. After deposition, the sample is placed in a vacuum chamber for more than 20min and sampled.
The reflection spectrum corresponding to the solar spectrum light splitting-heat absorbing film S2 based on the one-dimensional photonic crystal heterostructure of the present embodiment is shown in FIGS. 2 and 3, and it can be found that Si/SiO2The solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure has unsatisfactory solar spectrum splitting performance, and the solar spectrum splitting performance of the solar spectrum light splitting-heat absorbing film S2 added with a heterostructure layer is remarkably improved.
Under the condition of only considering normal incidence, the calculation formula of the absorptivity can be simplified as follows:
wherein λ is the wavelength; i is standard solar spectrum (AM 1.5); rλIs the emission spectrum of the corresponding wavelength. RλCan be obtained by measuring with an ultraviolet-visible-near infrared spectrophotometer and a Fourier transform infrared spectrometer.
According to the above formula, the calculation results of the solar spectrum light splitting-heat absorbing film related properties are shown in table 1:
TABLE 1 table for comparing absorptance of solar spectrum splitting-absorbing film S1 based on one-dimensional photonic crystal structure and solar spectrum splitting-absorbing film S2 based on one-dimensional photonic crystal heterostructure
Compared with the solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure, the absorption rate of the solar spectrum light splitting-heat absorbing film S2 of the one-dimensional photonic crystal heterostructure is kept stable at the photo-thermal wave band of 280-725nm, is obviously improved at the photo-thermal wave band of 1100-2500nm, and is greatly reduced at the photo-thermal wave band of 725-2500 nm, so that the spectrum splitting performance of the solar spectrum light splitting-heat absorbing film S2 is excellent, the solar energy of the 725-1100nm photo-thermal wave band can be effectively distributed to the photovoltaic cell for photovoltaic power generation, and the solar energy of the 280-725nm photo-thermal wave band and the 1100-2500nm photo-thermal wave band is used for solar heat collection and power generation, so that the full-spectrum comprehensive utilization of the solar spectrum is realized.
Example 2
In this example, CeO was selected separately2、TiO2、Ta2O5、HfO2Or V2O5As the material of the heterostructure layer, the solar spectrum splitting and absorbing film S2 based on the one-dimensional photonic crystal heterostructure was prepared by the method of example 1, and the reflection spectrum of the solar spectrum splitting and absorbing film S2 of the heterostructure layer made of different materials is shown in FIG. 3, it can be found that the heterostructure layer is similar to Si/SiO2Compared with the solar spectrum light splitting-heat absorbing film S1 based on the one-dimensional photonic crystal structure, the solar spectrum splitting performance of the solar spectrum light splitting-heat absorbing film S2 of the heterostructure layers made of different materials in the embodiment is also remarkably improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (9)
1. A solar spectrum light splitting-heat absorbing film based on a one-dimensional photonic crystal heterostructure is characterized in that: the photonic crystal heterostructure optical splitter comprises an absorption coating and a one-dimensional photonic crystal heterostructure optical splitter, wherein the one-dimensional photonic crystal heterostructure optical splitter is positioned on the absorption coating;
the absorption coating comprises a metal ceramic layer, and the one-dimensional photonic crystal heterostructure beam splitter is a heterostructure multilayer film based on a one-dimensional photonic crystal structure;
the one-dimensional photonic crystal heterostructure optical splitter comprises a one-dimensional photonic crystal and a heterostructure layer positioned on the upper surface of the one-dimensional photonic crystal, wherein the heterostructure layer is made of yttrium-stabilized zirconia and CeO2、TiO2、Ta2O5、HfO2Or V2O5。
2. The solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure according to claim 1, wherein: the one-dimensional photonic crystal is a multi-period one-dimensional photonic crystal; the one-dimensional photonic crystal is one-dimensional Si/SiO2Photonic crystal of base structure or one-dimensional TiO2/SiO2A photonic crystal of a base structure.
3. The solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure of claim 2, wherein: the metal ceramic layer is made of Ti-SiO2、W-SiO2、W-Al2O3、MoSi2–SiO2。
4. The solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure of claim 3, wherein: the thickness of the metal ceramic layer is 30-250 nm.
5. The solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure of claim 2, wherein: Si/SiO per period2In the basic one-dimensional photonic crystal, the thickness of the Si layer is 30-100nm, and SiO is2The thickness of the layer is 90-260 nm.
6. The solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure of claim 2, wherein: the substrate of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure is made of mechanically polished stainless steel.
7. The preparation method of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure according to any one of claims 2 to 6, characterized by comprising the following steps:
step S1, cleaning the surface of the substrate and fixing;
step S2, bias cleaning is carried out on the substrate, the condition is argon environment, the air pressure is about 0.6-0.8Pa, and the cleaning time is 3-5 min;
step S3, sputtering a metal ceramic layer, a multi-period one-dimensional photonic crystal and a heterostructure layer in sequence in an argon environment;
and step S4, after the deposition is finished, placing the film in a vacuum chamber for more than 20min, and sampling.
8. The preparation method of the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure according to claim 7, wherein the preparation method comprises the following steps: in step S2, the bias cleaning condition is argon environment, the air pressure is about 0.6-0.8Pa, and the cleaning time is 3-5 min; in step S3, the sputtering pressure is 0.3-0.5 Pa.
9. The method for preparing the solar spectrum light splitting-heat absorbing film based on the one-dimensional photonic crystal heterostructure according to claim 8, wherein the method comprises the following steps: in step S3, each layer and the heterostructure layer in the multi-period one-dimensional photonic crystal are subjected to radio frequency sputtering, and the power density is 3.00-4.00 W.cm-2(ii) a The metal ceramic layer is deposited by adopting direct current and radio frequency co-sputtering, and the direct current sputtering power density is 4.00-5.50 W.cm-2The power density of the radio frequency sputtering is 1.50-2.00 W.cm-2The metal ceramic layer is made of Ti-SiO2Ti and SiO in the cermet layer2The volume ratio of (A) to (B) is 1: 2-3.
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| CN104076530A (en) * | 2014-06-24 | 2014-10-01 | 绍兴文理学院 | One-dimensional photonic crystal selective radiator |
| CN107779921A (en) * | 2017-09-30 | 2018-03-09 | 佛山科学技术学院 | The preparation method of the compound heat absorbing coating of AAO photonic crystal based high-temp-resistant ternary nanos |
| CN110391314A (en) * | 2019-06-28 | 2019-10-29 | 华南农业大学 | A kind of narrowband photodetector and preparation method thereof |
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| CN104076530A (en) * | 2014-06-24 | 2014-10-01 | 绍兴文理学院 | One-dimensional photonic crystal selective radiator |
| CN107779921A (en) * | 2017-09-30 | 2018-03-09 | 佛山科学技术学院 | The preparation method of the compound heat absorbing coating of AAO photonic crystal based high-temp-resistant ternary nanos |
| CN110391314A (en) * | 2019-06-28 | 2019-10-29 | 华南农业大学 | A kind of narrowband photodetector and preparation method thereof |
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