CN111977659A - Nanometer silica flour apparatus for producing - Google Patents
Nanometer silica flour apparatus for producing Download PDFInfo
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- CN111977659A CN111977659A CN202010813001.3A CN202010813001A CN111977659A CN 111977659 A CN111977659 A CN 111977659A CN 202010813001 A CN202010813001 A CN 202010813001A CN 111977659 A CN111977659 A CN 111977659A
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 6
- 235000013312 flour Nutrition 0.000 title claims description 3
- 239000000377 silicon dioxide Substances 0.000 title claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 123
- 239000005543 nano-size silicon particle Substances 0.000 claims abstract description 61
- 239000011863 silicon-based powder Substances 0.000 claims abstract description 53
- 239000007789 gas Substances 0.000 claims abstract description 49
- 239000002994 raw material Substances 0.000 claims abstract description 40
- 238000012546 transfer Methods 0.000 claims abstract description 36
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000001816 cooling Methods 0.000 claims abstract description 18
- 239000002245 particle Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 15
- 238000001704 evaporation Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 11
- 230000008020 evaporation Effects 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 24
- 229910052786 argon Inorganic materials 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 238000012544 monitoring process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 235000013339 cereals Nutrition 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000000615 nonconductor Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000009826 distribution Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 231100000331 toxic Toxicity 0.000 abstract description 4
- 230000002588 toxic effect Effects 0.000 abstract description 4
- 238000009827 uniform distribution Methods 0.000 abstract description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 10
- 229910001416 lithium ion Inorganic materials 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 6
- 238000000498 ball milling Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910000077 silane Inorganic materials 0.000 description 6
- 239000007773 negative electrode material Substances 0.000 description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000010405 anode material Substances 0.000 description 1
- 239000011362 coarse particle Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a nano silicon powder production device, which relates to the technical field of powder production devices, and the technical scheme of the device is characterized by comprising a plasma non-transfer arc torch group, a reaction kettle and a collector; the plasma non-transfer arc torch group is used for heating and evaporating the silicon powder raw material; the reaction kettle is used for cooling the heated and evaporated silicon powder raw material into nano silicon powder; the collector is used for collecting the nano silicon powder. According to the invention, the coarse-grained silicon powder raw material is adopted, so that the purpose of reducing the raw material cost is achieved, and the use and the generation of toxic and harmful gases are avoided in the production process; the prepared nano silicon powder has the effects of high purity, high controllability of particle size distribution, simple preparation process and high yield; and the purposes of large evaporation capacity of the silicon powder raw material, uniform distribution of the silicon powder raw material, avoidance of the problem of excessive anode loss caused by excessive power of a single plasma arc torch and increase of the heating interval to improve the evaporation rate of the silicon powder raw material are achieved by adopting a plurality of plasma arc torches.
Description
Technical Field
The invention relates to the technical field of powder production devices, in particular to a nanometer silicon powder production device.
Background
The lithium ion battery has the advantages of high energy density, long cycle life, safety, relative reliability and the like, and is a main power supply of the portable electronic equipment; meanwhile, the lithium ion battery is widely used in the fields of electric tools, bicycles, scooters, miner lamps, medical appliances and the like. The high-power battery is mainly used for new energy automobiles and other occasions requiring large-current charging and discharging. With the rapid development of industries such as new energy automobiles and the like, the demand for high-capacity and high-power lithium ion batteries becomes more urgent. At present, the commercial negative electrode material is graphite, the theoretical capacity of the graphite is 372mAh/g, and the requirement of a lithium battery on energy is difficult to meet. It is necessary to find a material having a higher capacity as a negative electrode of a lithium battery. And the theoretical capacity of silicon is 4200mAh/g, which is far larger than that of the graphite cathode. Therefore, silicon will become a new anode material of lithium ion batteries.
However, the research of the large-capacity lithium ion battery is slow, mainly because the positive electrode material and the negative electrode material of the lithium ion battery used at present are close to the theoretical capacity, and are difficult to be improved. In order to meet the demand of high-capacity lithium ion batteries, research and development of novel materials with high capacity and low cost become a research hotspot in recent years. In terms of lithium ion battery negative electrode materials, metallic silicon is considered as the most potential negative electrode material of a new generation of high capacity lithium ion batteries. Silicon has very high volumetric capacity and specific mass capacity. Compared with carbon as a negative electrode material, the metal silicon has higher lithium-releasing and-inserting potential, can effectively avoid the precipitation of lithium in the process of high-rate charge and discharge, and can improve the safety of the battery. However, due to the influence of the volume effect, the metal silicon electrode is structurally damaged in the charging and discharging processes, so that the active material is peeled off from the current collector, the reversible capacity of the silicon negative electrode is reduced, and the cycle performance is deteriorated. Researchers have conducted extensive research and exploration and found that when the particle size of the metallic silicon is reduced below 200nm, the volume effect of the metallic silicon becomes small, reaching a level that can be tolerated by lithium ion batteries.
In the prior art, the main production methods for producing the nano silicon powder are a mechanical ball milling method and chemical vapor deposition methods of various heating sources. The silicon powder produced by the mechanical ball milling method has wide particle size distribution, and the particle size distribution cannot be controlled; the ball milling medium and the solvent can pollute the silicon powder, so that the purity of the silicon powder produced by the ball milling method is low; the ball milling is generally wet ball milling, so a drying procedure is required, and the oxidation of silicon powder is easily caused in the drying process. The chemical vapor deposition method is mainly based on the thermal decomposition reaction of silane, the silicon powder produced by the method has high purity and narrow particle size distribution, but the silane is flammable and explosive and has extremely toxic gas, which is not beneficial to transportation and storage, the control conditions in the production process are very strict, the requirements on workers are very high, flammable and explosive hydrogen is generated after the silane is decomposed, and oligomeric silane which is also generated when the silane is not completely decomposed, so the production method has low safety coefficient, has certain toxic risk to operators, is also easy to form toxic gas polluting the environment, and in addition, the price of the silane is much higher than that of coarse-particle silicon powder, so the cost for producing nano silicon powder by a CVD method is high, and the improvement is needed.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a nanometer silicon powder production device which has the effects of remarkably improving the purity, the yield and the particle size distribution regulation and control performance of produced and prepared silicon powder and solves the problem that the production of toxic and harmful gases affects workers and the environment.
In order to achieve the purpose, the invention provides the following technical scheme:
a nanometer silicon powder production device comprises a plasma non-transfer arc torch group, a reaction kettle and a collector;
the plasma non-transfer arc torch group is used for heating and evaporating silicon powder;
the reaction kettle is used for cooling the heated and evaporated silicon powder into nano silicon powder;
the collector is used for collecting the nano silicon powder.
The invention is further configured to: the plasma non-transfer arc torch group comprises at least two plasma arc torches distributed in an equal radian, and the plasma arc torches and the horizontal plane form an included angle of 45-90 degrees.
The invention is further configured to: the plasma non-transfer arc torch group consists of 2-6 plasma non-transfer arc torches to form a high-temperature plasma arc ring.
The invention is further configured to: the plasma arc torch is provided with three, and plasma arc torch and horizontal plane personally submit 45 contained angles and place.
The invention is further configured to: and a filter is arranged in the collector, and the nano silicon powder is collected and packaged after being filtered by the filter.
The invention is further configured to: the plasma non-transfer arc torch group is connected with a feeder and an air inlet pipe, and the feeder is used for guiding the silicon powder raw material into the plasma non-transfer arc torch group for heating and evaporation; the gas inlet pipe is used for introducing gas, and enabling the gas to wrap the heated and evaporated silicon powder raw material in the reaction kettle and be cooled into nano silicon powder.
The invention is further configured to: the collector is connected with a cooling air circulating device, and the outlet end of the cooling air circulating device is connected with the reaction kettle.
The invention is further configured to: the preparation method of the nano silicon powder comprises the following steps:
step 1, introducing gas tightness gas into a plasma non-transfer arc torch group, a reaction kettle, a collector, a feeder, an air inlet pipe and a cooling air circulating device to carry out gas tightness monitoring;
step 2, leading out gas tightness after completing gas tightness monitoring, and continuously leading working gas into the production device through a gas inlet pipe;
step 3, starting the plasma non-transfer arc torch group, the reaction kettle, the feeder and the cooling air circulating device, introducing the silicon powder raw material through the feeder, and starting to prepare the nano silicon powder;
and 4, collecting the nano silicon powder in the collector and packaging.
The invention is further configured to: the plasma non-transferred arc as the heating source is preferably a plasma laminar non-transferred arc.
The invention is further configured to: the current of the plasma non-transferred arc is 60-500A, and the voltage is 100-400V.
The invention is further configured to: the arc length of the plasma non-transfer arc is more than 500mm, and the arc length of the arc torch is 300-600 mm.
The invention is further configured to: the working gas is one or more of argon, hydrogen, nitrogen, ammonia and helium, and the gas inflow of the plasma arc torch is 2-20m3/h。
The invention is further configured to: the average particle size of the silicon powder raw material is 5-45 um.
The invention is further configured to: the feeding amount of the silicon powder raw material is 0.3-10 kg/h.
The invention is further configured to: the average grain diameter of the nano silicon powder is 20-200 nm.
The invention is further configured to: the nano silicon powder is spherical and contains less than 5% of oxygen content and less than 2% of carbon content.
The invention is further configured to: the silicon powder feedstock is preferably fed over the main arc formed by several torches, but is not limited to being over the main arc.
The invention is further configured to: the production device is not limited to producing nano silicon powder, can also produce nano metal powder, and is particularly suitable for producing non-conductor powder and ceramic powder, such as nitride, carbide and the like.
In conclusion, the invention has the following beneficial effects:
1. the raw material cost is reduced by adopting the coarse-grained silicon powder raw material based on a physical vapor deposition method, and the use and the generation of toxic and harmful gases are avoided in the production process;
2. the prepared nano silicon powder has the effects of high purity, high controllability of particle size distribution, simple preparation process and high yield;
3. the purposes of large evaporation capacity of the silicon powder raw material, uniform distribution of the silicon powder raw material, avoidance of the problem of overlarge anode loss caused by overlarge power of a single plasma arc torch and increase of the heating interval to improve the evaporation rate of the silicon powder raw material are achieved by adopting a plurality of plasma arc torches.
Drawings
FIG. 1 is a schematic view of the connection structure of the present application;
fig. 2 is a schematic structural diagram of a plasma non-transferred arc torch set according to the first embodiment.
Description of reference numerals: 1. a plasma non-transferred arc torch set; 11. a plasma arc torch; 2. a reaction kettle; 3. a collector; 4. a feeder; 5. an air inlet pipe; 6. and a cooling air circulating device.
Detailed Description
In order to make the technical solution and advantages of the present invention more clear, the present invention will be further described in detail with reference to the accompanying drawings.
First, it should be noted that the apparatus for producing nano silicon powder is not limited to producing nano silicon powder, but can also produce nano metal powder, and is particularly suitable for producing non-conductor powder and ceramic powder, such as nitride, carbide, etc.
Example one
As shown in fig. 1, a nano silicon powder production apparatus includes a plasma non-transfer arc torch set 1, a reaction kettle 2 and a collector 3. Wherein, the plasma non-transfer arc torch group 1 is used for heating and evaporating the silicon powder raw material; the reaction kettle 2 is used for cooling the heated and evaporated silicon powder raw material into nano silicon powder; the collector 3 is used for collecting the nano silicon powder.
It should be mentioned that the plasma non-transferred arc torch set 1 is connected with a feeder 4 and an air inlet pipe 5. The feeder 4 is used for guiding the silicon powder raw material into the plasma non-transfer arc torch group 1 for heating and evaporation; the gas inlet pipe 5 is used for introducing gas, and enabling the gas to wrap the heated and evaporated silicon powder raw material into the reaction kettle 2 to be cooled into nano silicon powder. Meanwhile, a filter is arranged in the collector 3, and the nano silicon powder is filtered by the filter and then collected and packaged. In order to further improve the energy utilization rate and further achieve the purposes of energy conservation and emission reduction, the collector 3 is connected with a cooling air circulating device 6. The inlet and outlet ends of the cooling air circulating device 6 are respectively connected with the collector 3 and the reaction kettle 2.
When the device is used, the silicon powder raw material which is heated and evaporated is wrapped by gas and enters the reaction kettle 2 to be cooled into nano silicon powder, and then the nano silicon powder enters the collector 3 through the gas wrapping so as to be collected and packaged after passing through the filter, and the gas entering the collector 3 is led into the reaction kettle 2 through the cooling air circulating device 6 so as to further use the gas cooled by the reaction kettle 2.
As shown in FIG. 2, the plasma non-transferred arc torch group 1 comprises at least two plasma arc torches 11 distributed in an equal radian, and the plasma arc torches 11 are arranged at an included angle of 45-90 degrees with the horizontal plane. In the present embodiment, three plasma arc torches 11 are provided, and the plasma arc torches 11 are disposed at an angle of 45 ° to the horizontal plane.
The preparation method of the nano silicon powder comprises the following steps:
step 1, introducing gas tightness gas into a plasma non-transfer arc torch group 1, a reaction kettle 2, a collector 3, a feeder 4, an air inlet pipe 5 and a cooling air circulating device 6 to carry out gas tightness monitoring;
step 2, leading out gas tightness after completing gas tightness monitoring, and continuously leading working gas into the production device through a gas inlet pipe 5;
step 3, starting the plasma non-transfer arc torch group 1, the reaction kettle 2, the feeder 4 and the cooling air circulating device 6, introducing the silicon powder raw material through the feeder 4, and starting to prepare the nano silicon powder;
and 4, collecting the nano silicon powder in the collector 3 and packaging.
Wherein, the plasma non-transfer arc of the plasma non-transfer arc torch group 1 is a plasma laminar flow non-transfer arc, the arc length of the plasma non-transfer arc is more than 500mm, and the arc length of the arc torch is 300-600 mm. The current of the plasma non-transferred arc is 60-500A, and the voltage is 100-400V. Meanwhile, the working gas is one or more of argon, hydrogen, nitrogen, ammonia and helium, and the air inflow of the working gas is 2n-20nm3H, wherein n is the number of the plasma arc torches 11 in the plasma non-transfer arc torch group 1, and the air input quantity of the working gas of each plasma arc torch 11 is 2-20m3H is used as the reference value. In this example, the arc length of the plasma non-transferred arc was 300mm, the current was 150A, the voltage was 150V, the working gas was argon, and the amount of argon gas fed was 8nm3H and n is 3, namely the air inflow of the argon is 24m3/h。
The average grain diameter of the adopted silicon powder raw material is 5-45um, and the feeding amount of the silicon powder raw material is 0.3-10 kg/h; correspondingly, the obtained nano silicon powder has the average particle size of 20-200nm, is spherical, and contains less than 5% of oxygen content and less than 2% of carbon content. The average particle size of the silicon powder raw material adopted in this example is 20um, the feeding amount of the silicon powder raw material is 1.2Kg/h, and the average particle size of the obtained nano silicon powder is 52 nm.
In order to improve the evaporation rate of the silicon powder raw material, the silicon powder raw material is fed to the main arcs formed by the plurality of plasma arc torches 11 through the feeders 4, and further, the silicon powder raw material is fed above the main arcs formed by the plurality of plasma arc torches 11 through the feeders 4.
Example two
The second embodiment differs from the first embodiment in that the plasma arc torch 11 of the second embodiment is positioned at an angle of 60 ° to the horizontal.
EXAMPLE III
The third embodiment differs from the first embodiment in that the plasma arc torch 11 of the third embodiment is positioned at a 90 ° angle to the horizontal.
Example four
The difference between the fourth embodiment and the first embodiment is that the plasma non-transferred arc in the fourth embodiment has a current of 60A, a voltage of 100V, an argon gas as a working gas, and an argon gas inflow of 2nm3H and n is 2, namely the air inflow of the argon is 4m3/h。
EXAMPLE five
The difference between the fifth embodiment and the first embodiment is that the plasma non-transferred arc in the fifth embodiment has a current of 500A, a voltage of 400V, argon as the working gas, and an amount of argon gas introduced is 20nm3H and n is 6, namely the air inflow of the argon is 120m3/h。
EXAMPLE six
The difference between the sixth embodiment and the first embodiment is that the average particle size of the silicon powder material used in the sixth embodiment is 45um, the feeding amount of the silicon powder material is 0.3Kg/h, and the average particle size of the obtained nano silicon powder is 200 nm.
EXAMPLE seven
The difference between the seventh embodiment and the first embodiment is that the average particle size of the silicon powder material used in the seventh embodiment is 5um, the feeding amount of the silicon powder material is 10Kg/h, and the average particle size of the obtained nano silicon powder is 20 nm.
Example eight
Example eight differs from example one in that the arc length of the torch in example eight is 450 mm.
Example nine
Example nine differs from example one in that in example nine the arc torch has an arc length of 600 mm.
In conclusion, several plasma non-transfer arc torches are used as a heating source, so that the plasma non-transfer arc torch has three advantages compared with a single non-transfer arc torch: firstly, the evaporation capacity is large; secondly, the raw materials can be uniformly distributed and added into the plasma arc during feeding, so that the problem that silicon powder cannot be completely evaporated due to the fact that the raw materials are difficult to add into the center of the arc during single non-transferred arc feeding is solved; thirdly, the anode loss is too large due to too large power of a single non-transfer arc torch with the same heating power, and the production cannot be carried out for a long time. In addition, the heating area can be enlarged by utilizing the plasma laminar non-transferred arc, so that the raw materials are fully evaporated, and the improvement of the evaporation capacity is facilitated; the production device of the nano silicon powder has obvious advantages in all aspects.
The above description is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiment, but all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the present invention may occur to those skilled in the art without departing from the principle of the present invention, and such modifications and embellishments should also be considered as within the scope of the present invention.
Claims (18)
1. A nanometer silica flour apparatus for producing, its characterized in that: comprises a plasma non-transfer arc torch group, a reaction kettle and a collector;
the plasma non-transfer arc torch group is used for heating and evaporating the silicon powder raw material;
the reaction kettle is used for cooling the heated and evaporated silicon powder raw material into nano silicon powder;
the collector is used for collecting the nano silicon powder.
2. The apparatus for producing nano silicon powder according to claim 1, characterized in that: the plasma non-transfer arc torch group comprises at least two plasma arc torches distributed in an equal radian, and the plasma arc torches and the horizontal plane form an included angle of 45-90 degrees.
3. The apparatus for producing nano silicon powder according to claim 2, characterized in that: the plasma non-transfer arc torch group consists of 2-6 plasma non-transfer arc torches to form a high-temperature plasma arc ring.
4. The apparatus for producing nano silicon powder according to claim 3, characterized in that: the plasma arc torch is provided with three, and plasma arc torch and horizontal plane personally submit 45 contained angles and place.
5. The apparatus for producing nano silicon powder according to claim 1, characterized in that: and a filter is arranged in the collector, and the nano silicon powder is collected and packaged after being filtered by the filter.
6. The apparatus for producing nano silicon powder according to claim 2, characterized in that: the plasma non-transfer arc torch group is connected with a feeder and an air inlet pipe, and the feeder is used for guiding the silicon powder raw material into the plasma non-transfer arc torch group for heating and evaporation; the gas inlet pipe is used for introducing gas, and enabling the gas to wrap the heated and evaporated silicon powder raw material in the reaction kettle and be cooled into nano silicon powder.
7. The apparatus for producing nano silicon powder according to claim 6, characterized in that: the collector is connected with a cooling air circulating device, and the outlet end of the cooling air circulating device is connected with the reaction kettle.
8. The apparatus for producing nano silicon powder according to claim 7, characterized in that: the preparation method of the nano silicon powder comprises the following steps:
step 1, introducing gas tightness gas into a plasma non-transfer arc torch group, a reaction kettle, a collector, a feeder, an air inlet pipe and a cooling air circulating device to carry out gas tightness monitoring;
step 2, leading out gas tightness after completing gas tightness monitoring, and continuously leading working gas into the production device through a gas inlet pipe;
step 3, starting the plasma non-transfer arc torch group, the reaction kettle, the feeder and the cooling air circulating device, introducing the silicon powder raw material through the feeder, and starting to prepare the nano silicon powder;
and 4, collecting the nano silicon powder in the collector and packaging.
9. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the plasma non-transferred arc as the heating source is preferably a plasma laminar non-transferred arc.
10. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the current of the plasma non-transferred arc is 60-500A, and the voltage is 100-400V.
11. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the arc length of the plasma non-transfer arc is more than 500mm, and the arc length of the arc torch is 300-600 mm.
12. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the working gasOne or more of argon, hydrogen, nitrogen, ammonia and helium, and the plasma arc torch has an air inflow of 2-20m3/h。
13. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the average particle size of the silicon powder raw material is 5-45 um.
14. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the feeding amount of the silicon powder raw material is 0.3-10 kg/h.
15. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the average grain diameter of the nano silicon powder is 20-200 nm.
16. The apparatus for producing nano silicon powder according to claim 8, characterized in that: the nano silicon powder is spherical and contains less than 5% of oxygen content and less than 2% of carbon content.
17. The apparatus for producing nano silicon powder according to claim 8, characterized in that: it is preferred that the feed be fed over the main arc formed by several torches, but not limited to, over the main arc.
18. The apparatus for producing nano silicon powder according to claim 17, wherein: the production device is not limited to producing nano silicon powder, can also produce nano metal powder, and is particularly suitable for producing non-conductor powder and ceramic powder, such as nitride, carbide and the like.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010813001.3A CN111977659A (en) | 2020-08-13 | 2020-08-13 | Nanometer silica flour apparatus for producing |
| JP2021131922A JP7330534B2 (en) | 2020-08-13 | 2021-08-13 | Nano silicon powder manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113149016A (en) * | 2021-02-24 | 2021-07-23 | 上海星持纳米科技有限公司 | Preparation method of high-purity spherical nano silicon powder with adjustable particle size |
| CN113290239A (en) * | 2021-05-21 | 2021-08-24 | 宁波广新纳米材料有限公司 | Preparation method of nano metal coated powder |
| CN113651329A (en) * | 2021-07-15 | 2021-11-16 | 中国恩菲工程技术有限公司 | Coated composite powder preparation method and preparation device |
| CN114349011A (en) * | 2022-01-14 | 2022-04-15 | 宁波广新纳米材料有限公司 | Preparation method of nano-sized silicon monoxide powder |
Families Citing this family (1)
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| CN114975909B (en) * | 2022-04-06 | 2024-04-19 | 江苏博迁新材料股份有限公司 | Production method of carbon-coated nano silicon powder used as lithium ion battery negative electrode material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110070400A (en) * | 2009-12-18 | 2011-06-24 | 인하대학교 산학협력단 | Preparation method of copper nano powder using transfeered arc or non-transferred arc plasma system |
| CN102951643A (en) * | 2012-10-15 | 2013-03-06 | 宁波广博纳米新材料股份有限公司 | Production method of nano-grade spherical silica powder |
| CN105458277A (en) * | 2015-12-19 | 2016-04-06 | 江永斌 | Device and method for producing high-purity metal powder through multi-head non-transferred arc plasma polymerization |
| KR20200056073A (en) * | 2018-11-14 | 2020-05-22 | 주식회사 멘도타 | Manufacturing apparatus and manufacturing method of nanopowder using DC arc plasma and apparatus for manufacturing the same |
| CN212864154U (en) * | 2020-08-13 | 2021-04-02 | 宁波广新纳米材料有限公司 | Nanometer silica flour apparatus for producing |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102910630B (en) | 2012-10-15 | 2014-07-02 | 江苏博迁新材料有限公司 | Production method of nano silicon powder |
| JP6596476B2 (en) | 2017-10-27 | 2019-10-23 | 三井金属鉱業株式会社 | Silicon-containing powder |
-
2020
- 2020-08-13 CN CN202010813001.3A patent/CN111977659A/en active Pending
-
2021
- 2021-08-13 JP JP2021131922A patent/JP7330534B2/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110070400A (en) * | 2009-12-18 | 2011-06-24 | 인하대학교 산학협력단 | Preparation method of copper nano powder using transfeered arc or non-transferred arc plasma system |
| CN102951643A (en) * | 2012-10-15 | 2013-03-06 | 宁波广博纳米新材料股份有限公司 | Production method of nano-grade spherical silica powder |
| CN105458277A (en) * | 2015-12-19 | 2016-04-06 | 江永斌 | Device and method for producing high-purity metal powder through multi-head non-transferred arc plasma polymerization |
| KR20200056073A (en) * | 2018-11-14 | 2020-05-22 | 주식회사 멘도타 | Manufacturing apparatus and manufacturing method of nanopowder using DC arc plasma and apparatus for manufacturing the same |
| CN212864154U (en) * | 2020-08-13 | 2021-04-02 | 宁波广新纳米材料有限公司 | Nanometer silica flour apparatus for producing |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113149016A (en) * | 2021-02-24 | 2021-07-23 | 上海星持纳米科技有限公司 | Preparation method of high-purity spherical nano silicon powder with adjustable particle size |
| CN113149016B (en) * | 2021-02-24 | 2023-09-22 | 上海星持纳米科技有限公司 | Preparation method of high-purity spherical nanometer silicon powder with adjustable particle size |
| CN113290239A (en) * | 2021-05-21 | 2021-08-24 | 宁波广新纳米材料有限公司 | Preparation method of nano metal coated powder |
| CN113290239B (en) * | 2021-05-21 | 2022-12-06 | 宁波广新纳米材料有限公司 | Preparation method of nano metal coated powder |
| CN113651329A (en) * | 2021-07-15 | 2021-11-16 | 中国恩菲工程技术有限公司 | Coated composite powder preparation method and preparation device |
| CN113651329B (en) * | 2021-07-15 | 2024-04-02 | 中国恩菲工程技术有限公司 | Preparation method and preparation device of coated composite powder |
| CN114349011A (en) * | 2022-01-14 | 2022-04-15 | 宁波广新纳米材料有限公司 | Preparation method of nano-sized silicon monoxide powder |
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| JP7330534B2 (en) | 2023-08-22 |
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