CN111969069A - 一种多像素超小电容x射线探测单元及探测器 - Google Patents
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Abstract
本发明公开了一种多像素超小电容X射线探测单元及探测器，多像素超小电容X射线探测单元，包括n型硅基体，其顶面设有P+阴极，底面设有n+阳极；n型硅基体的顶面设有第一二氧化硅矩形框，第一二氧化硅矩形框内设有第二二氧化硅矩形框，两者间形成第一P+重掺杂离子注入区，第二二氧化硅矩形框内形成第二P+重掺杂离子注入区，第二二氧化硅矩形框上形成连通第一P+重掺杂离子注入区和第二P+重掺杂离子注入区形成P+阴极的缺口，缺口为第三P+重掺杂离子注入区，第二P+重掺杂离子注入区上镀设有阴极铝层。一种多像素超小电容X射线探测器，由多个上述所述的多像素超小电容x射线探测单元呈阵列分布组成，电极面积和电容值小。
Description
技术领域
本发明属于X射线探测器技术领域，涉及一种多像素超小电容X射线探测单元及探测器。
背景技术
探测器的种类很多，主要有正比计数器、闪烁体探测器、气体探测器、半导体探测器等，各种探测器的探测原理不同。像素探测器在高能物理、航空航天及脉冲星导航等领域具有广泛应用。硅像素探测器是新型半导体探测器中的一种，可通过不同形状的像素单元阵列获得大面积的硅像素探测器。传统的硅像素探测器阳极、阴极均被金属电极即铝层覆盖，较大的有效电极面积使得探测器的收集电容较大。电容在硅探测器中是一个敏感因素，其直接影响到探测器工作的噪声与串扰，收集电容较大导致探测器工作的噪声较大。信噪比(S/N)是高性能探测器的一个关键参数，降低探测器噪声一直是探测器发展的主要任务之一。设计合理的电极形状不仅能大大的降低探测器的有效电极面积，从而得到超小的探测器收集电容，同时也获得均匀的电势、电场分布，以保证探测器全耗尽。
发明内容
本发明实施例的目的在于提供一种多像素超小电容X射线探测单元及探测器，以解决传统的硅像素探测器较大的有效电极面积使得探测器的收集电容较大，造成探测器工作的噪声较大的问题。
本发明实施例所采用的技术方案是，一种多像素超小电容X射线探测单元，包括n型硅基体，n型硅基体的顶面设有P+阴极，n型硅基体的底面设有n+阳极；
所述n型硅基体的顶面设置有第一二氧化硅矩形框，第一二氧化硅矩形框内设置有第二二氧化硅矩形框，第一二氧化硅矩形框和第二二氧化硅矩形框之间通过刻蚀、离子注入形成有第一P+重掺杂离子注入区，第二二氧化硅矩形框内通过刻蚀、离子注入形成有第二P+重掺杂离子注入区，第二二氧化硅矩形框上通过刻蚀、离子注入形成有缺口，缺口为第三P+重掺杂离子注入区，缺口连通第一P+重掺杂离子注入区和第二P+重掺杂离子注入区形成P+阴极，第二P+重掺杂离子注入区上镀设有阴极铝层。
进一步的，所述缺口的长度为5～10μm。
进一步的，所述n+阳极的长、宽均与n型硅基体的长、宽对应一致。
进一步的，所述n+阳极的厚度为1～3μm。
本发明实施例所采用的技术方案是，一种多像素超小电容X射线探测器，由多个上述所述的多像素超小电容x射线探测单元呈阵列分布组成。
进一步的，所述多像素超小电容X射线探测器的厚度为300μm，像素面积为5325μm2。
本发明实施例的有益效果是，提出一种多像素超小电容X射线探测单元及探测器，巧妙的设计了多像素超小电容X射线探测单元的P+阴极的结构和形状，通过一个缺口将第一P+重掺杂离子注入区和第二P+重掺杂离子注入区连接，减小了电极面积，进而减小了探测器电容值，有效降低探测器噪声同时使得耗尽电压和死区面积同时减小。解决了传统像素探测器结构的阴极面积大使得电容较大，造成探测器工作的噪声较大的问题，提高了探测器的分辨率。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明实施例的一种多像素超小电容像素探测器单元的结构示意图。
图2是本发明实施例的一种多像素超小电容像素探测器的阵列示意图。
图3是本发明实施例的一种多像素超小电容像素探测器的阴极结构示意图。
图中，1.P+阴极，2.n型硅基体，3.n+阳极，4.第一二氧化硅矩形框，5.第二二氧化硅矩形框，6.第一P+重掺杂离子注入区，7.第二P+重掺杂离子注入区，8.缺口。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明实施例提供一种多像素超小电容x射线探测器，如图1所示，由多个呈阵列分布的多像素超小电容x射线探测单元组成，如图2所示，所述多像素超小电容x射线探测单元包括n型硅基体2，n型硅基体2的顶面通过刻蚀、离子注入形成有P+阴极1，n型硅基体2的底面通过刻蚀、离子注入形成有n+阳极3。为了减少传统像素探测器的阴极面积进而使其电容更小，如图3所示，在n型硅基体2的顶面设置第一二氧化硅矩形框4，第一二氧化硅矩形框4内设置第二二氧化硅矩形框5，第一二氧化硅矩形框4和第二二氧化硅矩形框5之间通过刻蚀、离子注入形成有第一P+重掺杂离子注入区6，第二二氧化硅矩形框5内通过刻蚀、离子注入形成有第二P+重掺杂离子注入区7，第二二氧化硅矩形框5上通过刻蚀、离子注入形成有长度为5～10μm的缺口8，缺口8为第三P+重掺杂离子注入区，缺口8连通第一P+重掺杂离子注入区6和第二P+重掺杂离子注入区7形成P+阴极1，第二P+重掺杂离子注入区7上镀设有阴极铝层，阴极铝层用于读出探测信号。
传统的探测器整个顶面都是P+阴极，虽然死区很小，耗尽电压也更小，但是这样电容就更大，噪声更大。通过本发明实施例的电极设置，减少了阴极面积的同时耗尽电压和死区很小，这样电容就变小了。通过缺口8连接第一P+重掺杂离子注入区6和第二P+重掺杂离子注入区7，解决了收集问题的同时不影响分辨率和探测效率。
本发明实施例的发明点是巧妙的设计了阴极形状，通过缺口8将两个二氧化硅矩形框内的第一P+重掺杂离子注入区6和第二P+重掺杂离子注入区7连接，使P+阴极1面积减小，每个像素减少了第一二氧化硅矩形框4和第二二氧化硅矩形框5的面积，探测阵列有4000个单元，整个阵列的阴极即减少很多，并使得耗尽电压和死区面积同时减小，使得探测器工作的噪声变小。解决了传统像素探测器结构的阴极面积大使得电容较大，造成探测器工作的噪声较大的问题，提高了探测器的分辨率。
结电容由势垒电容和扩散电容组成，正向偏压时扩算电容起主要作用，但是加反偏电压时，起主导作用的就是扩散电容。探测器工作时加的是反偏电压，所以势垒电容是最主要的电容构成。所以本发明实施例的多像素超小电容X射线探测器的结电容与芯片厚度以及阴极面积有关，其关系可以描述为：
其中ε为硅的介电常数，ε0为真空介电常数，d为探测器芯片厚度，A为阴极面积，探测器芯片厚度为300μm、像素面积即该探测器阵列所有多像素超小电容x射线探测单元的P+阴极1的面积为5325μm2，通过上式可以计算出理论单元像素结电容约为1.775fF，而传统探测器(阴极覆盖探测器整个顶面)的结电容为2fF，有效减小探测器电容面积。
该探测器通过半导体探测器制作工艺来完成，n+阳极3和P+阴极1均为重掺杂硅，其中，n+阳极3的掺杂元素为硼，掺杂浓度为1019cm-3；P+阴极1的掺杂元素为磷，掺杂浓度为1019cm-3。n+阳极3的长和宽均与n型硅基体2的长和宽对应一致，其厚度为1～3μm。
硅像素探测器作为半导体探测器，其工作原理基于物理事件转化为电信号，这与其他探测器基本相同。当有粒子源射入后，在耗尽区形成大量的电子—空穴对，电子和空穴分别向阳极和阴极迁移，产生电流信号。通过对电流信号的分析就可以得到粒子位置和能量信息。
以上所述仅为本发明的较佳实施例而已，并非用于限定本发明的保护范围。凡在本发明的精神和原则之内所作的任何修改、等同替换、改进等，均包含在本发明的保护范围内。
Claims (6)
1.一种多像素超小电容X射线探测单元，其特征在于，包括n型硅基体(2)，n型硅基体(2)的顶面设有P+阴极(1)，n型硅基体(2)的底面设有n+阳极(3)；
所述n型硅基体(2)的顶面设置有第一二氧化硅矩形框(4)，第一二氧化硅矩形框(4)内设置有第二二氧化硅矩形框(5)，第一二氧化硅矩形框(4)和第二二氧化硅矩形框(5)之间通过刻蚀、离子注入形成有第一P+重掺杂离子注入区(6)，第二二氧化硅矩形框(5)内通过刻蚀、离子注入形成有第二P+重掺杂离子注入区(7)，第二二氧化硅矩形框(5)上通过刻蚀、离子注入形成有缺口(8)，缺口(8)为第三P+重掺杂离子注入区，缺口(8)连通第一P+重掺杂离子注入区(6)和第二P+重掺杂离子注入区(7)形成P+阴极(1)，第二P+重掺杂离子注入区(7)上镀设有阴极铝层。
2.根据权利要求1所述的一种多像素超小电容X射线探测单元，其特征在于，所述缺口(8)的长度为5～10μm。
3.根据权利要求1所述的一种多像素超小电容X射线探测单元，其特征在于，所述n+阳极(3)的长、宽均与n型硅基体(2)的长、宽对应一致。
4.根据权利要求3所述的一种多像素超小电容X射线探测单元，其特征在于，所述n+阳极(3)的厚度为1～3μm。
5.一种多像素超小电容X射线探测器，其特征在于，由多个如权利要求1～4任一项所述的多像素超小电容x射线探测单元呈阵列分布组成。
6.根据权利要求5所述的一种多像素超小电容X射线探测器，其特征在于，厚度为300μm，像素面积为5325μm2。
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| CN113658962B (zh) * | 2021-08-16 | 2024-04-19 | 中国科学院微电子研究所 | 探测器及其制作方法以及装置 |
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| CN113658962B (zh) * | 2021-08-16 | 2024-04-19 | 中国科学院微电子研究所 | 探测器及其制作方法以及装置 |
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