CN111965426A - Polysilicon piezoresistive coefficient testing structure and method - Google Patents

Polysilicon piezoresistive coefficient testing structure and method Download PDF

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Publication number
CN111965426A
CN111965426A CN202010602865.0A CN202010602865A CN111965426A CN 111965426 A CN111965426 A CN 111965426A CN 202010602865 A CN202010602865 A CN 202010602865A CN 111965426 A CN111965426 A CN 111965426A
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resistor
polysilicon
film
piezoresistive
stress
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黄向向
杨敏
洛伦佐·贝尔蒂尼
莱昂纳多·萨尔代利
关健
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Hanking Electronics Liaoning Co ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors

Abstract

A polysilicon piezoresistive coefficient test structure comprises a polysilicon resistor, a film, a substrate and a cavity; wherein: the polycrystalline silicon resistors are positioned on the film, each resistor is only under the action of a single stress component, the film is a silicon or silicon oxide film, external force acts on the film, and the resistance value of each polycrystalline silicon resistor is changed through the stress of the film and the piezoresistive effect; the substrate is a base member of a test structure which is a silicon wafer. A testing method of a polysilicon piezoresistive coefficient testing structure enables stress of a film to be changed and resistance value of a polysilicon resistor to be changed by external stress or temperature change of the testing structure, and piezoresistive coefficient components corresponding to resistors can be calculated through resistance value change of a single resistor. The invention has the advantages that: the structure and the method for testing the piezoresistive coefficient of the polycrystalline silicon realize accurate and effective testing of the piezoresistive coefficient of the polycrystalline silicon in the field of MEMS sensors, overcome the defects of the traditional scheme and improve the precision and the reliability.

Description

Polysilicon piezoresistive coefficient testing structure and method
Technical Field
The invention relates to the field of sensors, in particular to a structure and a method for testing a piezoresistive coefficient of polycrystalline silicon.
Background
In the field of MEMS sensors, many devices work by using the piezoresistive effect of semiconductor materials, which is a physical phenomenon that the resistivity of a material changes under the action of an external force, wherein the parameter characterizing the piezoresistive effect is the piezoresistive coefficient of the material. In the MEMS industry, the piezoresistive materials commonly used mainly include monocrystalline silicon and polycrystalline silicon, and the piezoresistive coefficient of the monocrystalline silicon material is mainly related to the intrinsic characteristics of the material, such as doping and crystal orientation. And the piezoresistive coefficient of the single crystal silicon material is known and can be predicted. The piezoresistive coefficient of polysilicon material is related to the size, direction, boundary, and growth direction of polysilicon grains, and these parameters are related to the polysilicon manufacturing process. There is currently no effective test method for measuring the piezoresistive coefficient of polysilicon. Currently, only a method for evaluating the grain orientation of polycrystalline silicon by XRD technology cannot give a numerical value of piezoresistive coefficient.
Disclosure of Invention
The invention aims to overcome the defects at present and particularly provides a structure and a method for testing a piezoresistive coefficient of polycrystalline silicon.
The invention provides a polysilicon piezoresistive coefficient test structure, which is characterized in that: the polysilicon piezoresistive coefficient test structure comprises a polysilicon resistor 1, a film 2, a substrate 3 and a cavity 4;
wherein: the polycrystalline silicon resistors 1 are positioned on the thin film 2, each resistor is only under the action of a single stress component, the thin film 2 is a silicon or silicon oxide thin film, external force acts on the thin film 2, and the resistance value of the polycrystalline silicon resistors 1 is changed through the stress and piezoresistive effect of the thin film 2; the substrate 3 is a silicon wafer, the base member of the test structure, the chamber 4 is a rectangular parallelepiped structure, a certain pressure is maintained inside, and the pressure in the sealed chamber 4 is known.
The film 2 is a square suspended film, and the side length is L; the position of the polysilicon resistor 1 is located at the position of the diagonal of the square film from the side length of the nearest fixed point 1/4, and the direction of the polysilicon resistor 1 is parallel to one diagonal.
The number of the polysilicon resistors 1 is 2-8.
The polysilicon resistor 1 is in a strip resistor or a cross resistor shape; because the cross angle of the cross-type resistor is 90 degrees, different piezoresistive coefficient components are measured on the same resistor according to different electrical configurations; the cross-type resistor has 4 electrical connections, 5, 6, 7 and 8 respectively, and different piezoresistive coefficient components can be tested on the same resistor by connecting different resistor connecting terminals. E.g. 5, 7 connections, the longitudinal piezoresistive component pi can be testedl(ii) a 6. 8 connection can test transverse piezoresistive coefficient component pit。
A testing method of a polysilicon piezoresistive coefficient testing structure is characterized in that: by external stress or changing temperature for the test structure. The stress of the film 2 is changed, the resistance value of the polysilicon resistor is changed due to the piezoresistive effect of the polysilicon resistor 1, each resistor is only affected by a single stress component due to the special position of the resistor, and the piezoresistive coefficient component corresponding to the resistor can be calculated through the change of the resistance value of the single resistor.
Test structures and techniques to separately measure 2 piezoresistive coefficient components of doped polysilicon. This technique consists in creating a square suspended membrane, at least 2 resistors, each of which must be square in the diagonal direction, in a specific position, ensuring that each resistor is affected only by transverse or longitudinal stresses. The resistance direction is 45 degrees from the square side and is on the diagonal. 4 resistors, each with a suitable position, may also be provided with other numbers of resistors in order to compensate for process tolerances. A cross-resistor structure, with cross resistors placed in appropriate locations, can provide sensitivity. There may be 4 cross-type resistors in order to increase the accuracy and reliability of process tolerances. The suspended membrane is on a sealed chamber, the pressure in which is known.
Introduction of piezoresistive coefficients:
the piezoresistive effect of a semiconductor refers to a phenomenon in which when a semiconductor is subjected to a stress, its resistivity changes due to a change in carrier mobility. The piezoresistive coefficient is a specific parameter for characterizing the piezoresistive effect. Indicating the rate of change of resistance under stress.
In the polysilicon resistor, there are three stresses, longitudinal stress, lateral stress and tangential stress, see fig. 9. The resistance change is as in equation 1,
Figure BDA0002559694910000031
wherein pil,t,sIs the longitudinal, transverse and tangential piezoresistive coefficient, sigma, of polysiliconl,t,sThe stress is the longitudinal, transverse and tangential stress of the polysilicon. In the case of applying piezoresistive effect in the MEMS field, the tangential piezoresistive coefficient is usually not considered, so equation 1 is reduced to equation 2:
Figure BDA0002559694910000032
it can be seen that the change in resistance is related only to lateral and longitudinal stresses, so in a particular application we need to measure the piezoresistive coefficients in both the lateral and longitudinal directions.
The invention has the advantages that:
the structure and the method for testing the piezoresistive coefficient of the polycrystalline silicon realize accurate and effective testing of the piezoresistive coefficient of the polycrystalline silicon in the field of MEMS sensors, overcome the defects of the traditional scheme and improve the precision and the reliability.
Drawings
The invention is described in further detail below with reference to the following figures and embodiments:
FIG. 1 is a schematic diagram of a polysilicon resistance piezoresistive coefficient test structure;
FIG. 2 is a cross-sectional view of a polysilicon test structure;
FIG. 3 is a schematic diagram of the resistor location;
FIG. 4 is a schematic view of a high pressure applied or low temperature processed film;
FIG. 5 is a schematic view of a low pressure force or high temperature processing film;
FIG. 6 is a schematic diagram of a dual resistance test structure;
FIG. 7 is a schematic diagram of a cross-type resistance test structure;
fig. 8 is a schematic diagram of a cross-type resistor.
Fig. 9 is a schematic diagram of stress direction in the polysilicon resistor.
Detailed Description
Example 1
The invention provides a polysilicon piezoresistive coefficient test structure, which is characterized in that: the polysilicon piezoresistive coefficient test structure comprises a polysilicon resistor 1, a film 2, a substrate 3 and a cavity 4;
wherein: the polycrystalline silicon resistors 1 are positioned on the thin film 2, each resistor is only under the action of a single stress component, the thin film 2 is a silicon or silicon oxide thin film, external force acts on the thin film 2, and the resistance value of the polycrystalline silicon resistors 1 is changed through the stress and piezoresistive effect of the thin film 2; the substrate 3 is a silicon wafer, the base member of the test structure, the chamber 4 is a rectangular parallelepiped structure, a certain pressure is maintained inside, and the pressure in the sealed chamber 4 is known.
The film 2 is a square suspended film, and the side length is L; the position of the polysilicon resistor 1 is located at the position of the diagonal of the square film from the side length of the nearest fixed point 1/4, and the direction of the polysilicon resistor 1 is parallel to one diagonal.
The number of the polysilicon resistors 1 is 2.
The polysilicon resistor 1 is in a strip resistor or a cross resistor shape; because the cross angle of the cross-type resistor is 90 degrees, different piezoresistive coefficient components are measured on the same resistor according to different electrical configurations; the cross-type resistor has 4 electrical connections, 5, 6, 7 and 8 respectively, and different piezoresistive coefficient components can be tested on the same resistor by connecting different resistor connecting terminals. E.g. 5, 7 connections, the longitudinal piezoresistive component pi can be testedl(ii) a 6. 8 connection can test transverse piezoresistive coefficient component pit。
A testing method of a polysilicon piezoresistive coefficient testing structure is characterized in that: by external stress or changing temperature for the test structure. The stress of the film 2 is changed, the resistance value of the polysilicon resistor is changed due to the piezoresistive effect of the polysilicon resistor 1, each resistor is only affected by a single stress component due to the special position of the resistor, and the piezoresistive coefficient component corresponding to the resistor can be calculated through the change of the resistance value of the single resistor.
Test structures and techniques to separately measure 2 piezoresistive coefficient components of doped polysilicon. This technique consists in creating a square suspended membrane, at least 2 resistors, each of which must be square in the diagonal direction, in a specific position, ensuring that each resistor is affected only by transverse or longitudinal stresses. The resistance direction is 45 degrees from the square side and is on the diagonal. 4 resistors, each with a suitable position, may also be provided with other numbers of resistors in order to compensate for process tolerances. A cross-resistor structure, with cross resistors placed in appropriate locations, can provide sensitivity. There may be 4 cross-type resistors in order to increase the accuracy and reliability of process tolerances. The suspended membrane is on a sealed chamber, the pressure in which is known.
Introduction of piezoresistive coefficients:
the piezoresistive effect of a semiconductor refers to a phenomenon in which when a semiconductor is subjected to a stress, its resistivity changes due to a change in carrier mobility. The piezoresistive coefficient is a specific parameter for characterizing the piezoresistive effect. Indicating the rate of change of resistance under stress.
In the polysilicon resistor, there are three stresses, longitudinal stress, lateral stress and tangential stress, see fig. 9. The resistance change is as in equation 1,
Figure BDA0002559694910000061
wherein pil,t,sIs the longitudinal, transverse and tangential piezoresistive coefficient, sigma, of polysiliconl,t,sThe stress is the longitudinal, transverse and tangential stress of the polysilicon. In the case of applying piezoresistive effect in the MEMS field, the tangential piezoresistive coefficient is usually not considered, so equation 1 is reduced to equation 2:
Figure BDA0002559694910000062
it can be seen that the change in resistance is related only to lateral and longitudinal stresses, so in a particular application we need to measure the piezoresistive coefficients in both the lateral and longitudinal directions.
Example 2
The invention provides a polysilicon piezoresistive coefficient test structure, which is characterized in that: the polysilicon piezoresistive coefficient test structure comprises a polysilicon resistor 1, a film 2, a substrate 3 and a cavity 4;
wherein: the polycrystalline silicon resistors 1 are positioned on the thin film 2, each resistor is only under the action of a single stress component, the thin film 2 is a silicon or silicon oxide thin film, external force acts on the thin film 2, and the resistance value of the polycrystalline silicon resistors 1 is changed through the stress and piezoresistive effect of the thin film 2; the substrate 3 is a silicon wafer, the base member of the test structure, the chamber 4 is a rectangular parallelepiped structure, a certain pressure is maintained inside, and the pressure in the sealed chamber 4 is known.
The film 2 is a square suspended film, and the side length is L; the position of the polysilicon resistor 1 is located at the position of the diagonal of the square film from the side length of the nearest fixed point 1/4, and the direction of the polysilicon resistor 1 is parallel to one diagonal.
The number of the polysilicon resistors 1 is 4.
The polysilicon resistor 1 is in a strip resistor or a cross resistor shape; because the cross angle of the cross-type resistor is 90 degrees, different piezoresistive coefficient components are measured on the same resistor according to different electrical configurations; the cross-type resistor has 4 electrical connections, 5, 6, 7 and 8 respectively, and different piezoresistive coefficient components can be tested on the same resistor by connecting different resistor connecting terminals. E.g. 5, 7 connections, the longitudinal piezoresistive component pi can be testedl(ii) a 6. 8 connection can test transverse piezoresistive coefficient component pit。
A testing method of a polysilicon piezoresistive coefficient testing structure is characterized in that: by external stress or changing temperature for the test structure. The stress of the film 2 is changed, the resistance value of the polysilicon resistor is changed due to the piezoresistive effect of the polysilicon resistor 1, each resistor is only affected by a single stress component due to the special position of the resistor, and the piezoresistive coefficient component corresponding to the resistor can be calculated through the change of the resistance value of the single resistor.
Test structures and techniques to separately measure 2 piezoresistive coefficient components of doped polysilicon. This technique consists in creating a square suspended membrane, at least 2 resistors, each of which must be square in the diagonal direction, in a specific position, ensuring that each resistor is affected only by transverse or longitudinal stresses. The resistance direction is 45 degrees from the square side and is on the diagonal. 4 resistors, each with a suitable position, may also be provided with other numbers of resistors in order to compensate for process tolerances. A cross-resistor structure, with cross resistors placed in appropriate locations, can provide sensitivity. There may be 4 cross-type resistors in order to increase the accuracy and reliability of process tolerances. The suspended membrane is on a sealed chamber, the pressure in which is known.
Introduction of piezoresistive coefficients:
the piezoresistive effect of a semiconductor refers to a phenomenon in which when a semiconductor is subjected to a stress, its resistivity changes due to a change in carrier mobility. The piezoresistive coefficient is a specific parameter for characterizing the piezoresistive effect. Indicating the rate of change of resistance under stress.
In the polysilicon resistor, there are three stresses, longitudinal stress, lateral stress and tangential stress, see fig. 9. The resistance change is as in equation 1,
Figure BDA0002559694910000081
wherein pil,t,sIs the longitudinal, transverse and tangential piezoresistive coefficient, sigma, of polysiliconl,t,sThe stress is the longitudinal, transverse and tangential stress of the polysilicon. In the case of applying piezoresistive effect in the MEMS field, the tangential piezoresistive coefficient is usually not considered, so equation 1 is reduced to equation 2:
Figure BDA0002559694910000082
it can be seen that the change in resistance is related only to lateral and longitudinal stresses, so in a particular application we need to measure the piezoresistive coefficients in both the lateral and longitudinal directions.
Example 3
The invention provides a polysilicon piezoresistive coefficient test structure, which is characterized in that: the polysilicon piezoresistive coefficient test structure comprises a polysilicon resistor 1, a film 2, a substrate 3 and a cavity 4;
wherein: the polycrystalline silicon resistors 1 are positioned on the thin film 2, each resistor is only under the action of a single stress component, the thin film 2 is a silicon or silicon oxide thin film, external force acts on the thin film 2, and the resistance value of the polycrystalline silicon resistors 1 is changed through the stress and piezoresistive effect of the thin film 2; the substrate 3 is a silicon wafer, the base member of the test structure, the chamber 4 is a rectangular parallelepiped structure, a certain pressure is maintained inside, and the pressure in the sealed chamber 4 is known.
The film 2 is a square suspended film, and the side length is L; the position of the polysilicon resistor 1 is located at the position of the diagonal of the square film from the side length of the nearest fixed point 1/4, and the direction of the polysilicon resistor 1 is parallel to one diagonal.
The number of the polysilicon resistors 1 is 8.
The polysilicon resistor 1 is in a strip resistor or a cross resistor shape; because the cross angle of the cross-type resistor is 90 degrees, different piezoresistive coefficient components are measured on the same resistor according to different electrical configurations; the cross-type resistor has 4 electrical connections, 5, 6, 7 and 8 respectively, and different piezoresistive coefficient components can be tested on the same resistor by connecting different resistor connecting terminals. E.g. 5, 7 connections, the longitudinal piezoresistive component pi can be testedl(ii) a 6. 8 connection can test transverse piezoresistive coefficient component pit。
A testing method of a polysilicon piezoresistive coefficient testing structure is characterized in that: by external stress or changing temperature for the test structure. The stress of the film 2 is changed, the resistance value of the polysilicon resistor is changed due to the piezoresistive effect of the polysilicon resistor 1, each resistor is only affected by a single stress component due to the special position of the resistor, and the piezoresistive coefficient component corresponding to the resistor can be calculated through the change of the resistance value of the single resistor.
Test structures and techniques to separately measure 2 piezoresistive coefficient components of doped polysilicon. This technique consists in creating a square suspended membrane, at least 2 resistors, each of which must be square in the diagonal direction, in a specific position, ensuring that each resistor is affected only by transverse or longitudinal stresses. The resistance direction is 45 degrees from the square side and is on the diagonal. 4 resistors, each with a suitable position, may also be provided with other numbers of resistors in order to compensate for process tolerances. A cross-resistor structure, with cross resistors placed in appropriate locations, can provide sensitivity. There may be 4 cross-type resistors in order to increase the accuracy and reliability of process tolerances. The suspended membrane is on a sealed chamber, the pressure in which is known.
Introduction of piezoresistive coefficients:
the piezoresistive effect of a semiconductor refers to a phenomenon in which when a semiconductor is subjected to a stress, its resistivity changes due to a change in carrier mobility. The piezoresistive coefficient is a specific parameter for characterizing the piezoresistive effect. Indicating the rate of change of resistance under stress.
In the polysilicon resistor, there are three stresses, longitudinal stress, lateral stress and tangential stress, see fig. 9. The resistance change is as in equation 1,
Figure BDA0002559694910000101
wherein pil,t,sIs the longitudinal, transverse and tangential piezoresistive coefficient, sigma, of polysiliconl,t,sThe stress is the longitudinal, transverse and tangential stress of the polysilicon. In the case of applying piezoresistive effect in the MEMS field, the tangential piezoresistive coefficient is usually not considered, so equation 1 is reduced to equation 2:
Figure BDA0002559694910000111
it can be seen that the change in resistance is related only to lateral and longitudinal stresses, so in a particular application we need to measure the piezoresistive coefficients in both the lateral and longitudinal directions.

Claims (6)

1. A polysilicon piezoresistive coefficient test structure is characterized in that: the polycrystalline silicon piezoresistive coefficient test structure comprises a polycrystalline silicon resistor (1), a film (2), a substrate (3) and a cavity (4);
wherein: the polycrystalline silicon resistor (1) is positioned on the film (2) to ensure that each resistor is only subjected to the action of a single stress component, the film (2) is a silicon or silicon oxide film, external force acts on the film (2), and the resistance value of the polycrystalline silicon resistor (1) is changed through the stress and piezoresistive effect of the film (2); the substrate (3) is a silicon wafer and is a base piece of a test structure, the cavity (4) is of a cuboid structure, certain pressure is kept inside the cavity, and the pressure in the sealed cavity (4) is known.
2. The polysilicon piezoresistive coefficient test structure of claim 1, wherein: the film (2) is a square suspended film, and the side length is L; the position of the polysilicon resistor (1) is positioned at the position of the diagonal of the square film away from the side length of the nearest fixed point 1/4, and the direction of the polysilicon resistor (1) is parallel to one diagonal.
3. The polysilicon piezoresistive coefficient test structure of claim 1, wherein: the number of the polysilicon resistors (1) is 2-8.
4. The polysilicon piezoresistive coefficient test structure of claim 1, wherein: the polysilicon resistor (1) is in a strip resistor or a cross resistor shape; since the cross angle of the cross-type resistor is 90 degrees, different piezoresistive coefficient components are measured on the same resistor according to different electrical configurations.
5. A method for testing a polysilicon piezoresistive coefficient test structure according to claim 1, wherein: the test method comprises the following steps: the stress of the film (2) is changed by testing the external stress of the structure time or changing the temperature, the resistance value of the polysilicon resistor is changed due to the piezoresistive effect of the polysilicon resistor (1), each resistor is only affected by a single stress component due to the special position of the resistor, and the piezoresistive coefficient component corresponding to the resistor can be calculated through the change of the resistance value of the single resistor.
6. The method for testing a polysilicon piezoresistive coefficient test structure according to claim 5, wherein: test structures and techniques to separately measure 2 piezoresistive coefficient components of doped polysilicon. The technique includes establishing a square suspended film, at least 2 resistors, each resistor having to be in a diagonal direction of the square, at a specific position to ensure that each resistor is affected only by transverse or longitudinal stress, the direction of the resistor being at an angle of 45 degrees to the sides of the square and being on the diagonal.
CN202010602865.0A 2020-06-29 2020-06-29 Polysilicon piezoresistive coefficient testing structure and method Pending CN111965426A (en)

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