CN111952470A - Method for manufacturing silicon dioxide doped CdSe quantum dot and light emitting diode device - Google Patents
Method for manufacturing silicon dioxide doped CdSe quantum dot and light emitting diode device Download PDFInfo
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 113
- 239000002096 quantum dot Substances 0.000 title claims abstract description 64
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 47
- 235000012239 silicon dioxide Nutrition 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 29
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims abstract description 43
- 239000011521 glass Substances 0.000 claims abstract description 30
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- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 22
- 235000021355 Stearic acid Nutrition 0.000 claims abstract description 13
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 claims abstract description 13
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims abstract description 10
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- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 claims description 62
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 60
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 50
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 48
- 238000003756 stirring Methods 0.000 claims description 41
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000137 annealing Methods 0.000 claims description 26
- 239000011787 zinc oxide Substances 0.000 claims description 25
- 238000001035 drying Methods 0.000 claims description 24
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- 235000019441 ethanol Nutrition 0.000 claims description 22
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 21
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- 238000005303 weighing Methods 0.000 claims description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052711 selenium Inorganic materials 0.000 claims description 14
- 239000011669 selenium Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 230000005525 hole transport Effects 0.000 claims description 12
- YZYKBQUWMPUVEN-UHFFFAOYSA-N zafuleptine Chemical compound OC(=O)CCCCCC(C(C)C)NCC1=CC=C(F)C=C1 YZYKBQUWMPUVEN-UHFFFAOYSA-N 0.000 claims description 12
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 11
- 239000004246 zinc acetate Substances 0.000 claims description 11
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 10
- 238000001914 filtration Methods 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 239000006228 supernatant Substances 0.000 claims description 10
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- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 7
- 238000005119 centrifugation Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 239000003921 oil Substances 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 claims description 5
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 4
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 4
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 4
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000005642 Oleic acid Substances 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 4
- 239000002244 precipitate Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 3
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- 238000007865 diluting Methods 0.000 claims description 2
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- 239000008117 stearic acid Substances 0.000 claims description 2
- 239000008096 xylene Substances 0.000 claims description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000000969 carrier Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 239000003153 chemical reaction reagent Substances 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 239000012295 chemical reaction liquid Substances 0.000 description 9
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- 238000003825 pressing Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000000047 product Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229920000144 PEDOT:PSS Polymers 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000004744 fabric Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
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- 239000002346 layers by function Substances 0.000 description 2
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- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
The invention relates to a method for manufacturing a CdSe quantum dot doped with silicon dioxide and a light-emitting diode device, which comprises the following steps of firstly, preparing PEDOT on an ITO film on ITO glass by using a spin coating process after cleaning and ozone treatment of ITO conductive glass: and a PSS layer, and then a TFB layer, a CdSe quantum dot light emitting layer, a ZnO electron transmission layer and a silicon dioxide electrode are obtained through spin coating in sequence, wherein silicon dioxide nano particles modified by a silane coupling agent KH550 and octadecanoic acid are particularly used in the quantum dot layer for doping, and finally the silicon dioxide-doped CdSe quantum dot and the light emitting diode device are formed. The film of the invention dopes CdSe through the silicon dioxide nano-particles, thereby ensuring that the gap between quantum dots is filled, reducing the possibility that electron holes are compounded through the gap, and improving the performance of the device under the condition of ensuring the concentration of current carriers.
Description
Technical Field
The invention belongs to the field of photoelectric materials and devices, and particularly relates to a method for manufacturing a CdSe quantum dot doped with silicon dioxide and a light-emitting diode device.
Background
With the development of science and technology and the advancement of society, information exchange and transmission become an indispensable part in daily life. The quantum dot photoluminescent optical thin film device, as a display device most likely to be put into practical use, plays an important role in the fields of information exchange, transmission and the like. The quantum dot light-emitting optical thin film device is a display device most likely to be put into practical use, and has become the most popular research object at present because of its excellent advantages such as photoluminescence, wide color gamut, and adjustable light color. Currently, quantum dot light emitting diodes mostly adopt a method of preparing a quantum dot precursor solution and then preparing the solution into a device through spin coating. In order to improve the light emitting performance of the device and improve the light emitting stability and lifetime, it is necessary to improve the performance of the device by controlling the particle size of the quantum dot material or improving each functional layer of the quantum dot device. Through a large number of experiments, people use substances to dope or modify different functional layers of a quantum dot light-emitting diode device, so that the device with better light-emitting performance is obtained.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing a CdSe quantum dot doped with silicon dioxide and a light emitting diode device, which can improve the performance of the device while ensuring the electron hole concentration.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for manufacturing a CdSe quantum dot doped with silicon dioxide and a light-emitting diode device comprises the following steps:
step S1: selecting ITO glass as a substrate of the light-emitting diode, wherein the ITO glass comprises a glass substrate and an ITO thin film covered on the surface of the glass substrate;
step S2: spin coating PEDOT on ITO conductive glass: PSS solution, and forming a film through annealing and drying;
step S3: and (3) preparing a hole transport layer solution, and spin-coating on PEDOT: annealing and drying the PSS film layer to form a hole transport layer;
step S4: modifying the silicon dioxide nanoparticles by using a silane coupling agent KH550 and octadecanoic acid, and dissolving the nanoparticles by using n-hexane to prepare an n-hexane solution of the silicon dioxide nanoparticles;
step S5: preparing CdSe quantum dots, preparing a mixed solution of the CdSe quantum dots and silicon dioxide nano particles, and spin-coating the mixed solution on a hole transport layer to form a CdSe quantum dot light-emitting central layer;
step S6: preparing a ZnO solution, and spin-coating the ZnO solution on the quantum dot film layer to form an electron transport layer of zinc oxide;
step S7: and (4) evaporating silver on the sample wafer prepared in the step S6 by using an evaporation technology to form a silver electrode, so as to prepare the CdSe quantum dot light-emitting diode doped with silicon dioxide.
Further, the step S3 is specifically:
step S31, dissolving TFB in chlorobenzene to prepare a hole transport layer solution;
step S32 spin coating the solution to a solution that has been spin coated with PEDOT: and annealing and drying the ITO conductive glass substrate of the PSS film to form a hole transport layer.
Further, the step S4 specifically includes:
step S41: weighing a proper amount of silicon dioxide nano particles, adding the silicon dioxide nano particles into an absolute ethyl alcohol/water mixed solution containing a silane coupling agent KH550 after stirring and hydrolysis, violently stirring to uniformly disperse silicon dioxide, then stirring for a period of time under the condition of oil bath, washing for a plurality of times by using ethyl alcohol after centrifugation, and drying to obtain silicon dioxide particles modified by the silane coupling agent;
step S42: weighing a certain amount of stearic acid, dissolving in xylene, uniformly dispersing silica particles modified by a silane coupling agent under stirring, reacting for a period of time at constant temperature, centrifugally washing, drying, and dissolving by using a proper amount of n-hexane to prepare the n-hexane solution of the modified silica nanoparticles.
Further, the step S5 is specifically:
step S51, stirring and dissolving selenium powder, sulfur powder and TOP solution at a preset temperature to prepare a precursor solution of selenium;
step S52, stirring cadmium oxide, zinc acetate and oleic acid for a preset time, then injecting a small amount of ODE solution, and raising the temperature of the solution;
s53, taking a selenium precursor solution, quickly injecting the selenium precursor solution into the solution when the temperature of the solution reaches a preset value, keeping the solution for a period of time, and simultaneously exciting the solution by using an ultraviolet lamp; finally, rapidly cooling the quantum dot solution in a water bath mode, and diluting with n-hexane to obtain the quantum dot solution;
step S54: taking out the supernatant of a part of the quantum dot solution after standing, dissolving oleic acid by using a proper amount of methanol, then adding a proper amount of n-hexane solution for dissolving, taking out the upper layer solution, adding a proper amount of absolute ethyl alcohol for centrifuging, and finally dissolving the precipitate by using the n-hexane solution of silicon dioxide nano particles to obtain a purified quantum dot solution;
and step S55, taking out the purified quantum dot solution, and preparing the CdSe quantum dot film on the ITO glass substrate with the hole transport layer in a spin coating mode.
Further, the step S6 is specifically:
step S61: mixing zinc acetate dihydrate with a DMSO solution, heating and stirring at a preset temperature to prepare a DMSO solution of zinc acetate;
step S62, mixing TMAH and ethanol, and stirring until the mixture is clear and transparent to obtain an ethanol solution of TMAH;
step S63, dropwise adding an ethanol solution of TMAH into a zinc acetate solution, and heating and stirring for a period of time at a preset temperature; after the reaction is finished, precipitating the reaction solution by using a proper amount of ethyl acetate, obtaining ZnO precipitate by a centrifugal filtration method, dissolving by using a proper amount of butanol solution, and filtering to obtain a ZnO solution;
step S64: and (3) spin-coating the ZnO solution on the ITO glass substrate with the quantum dot film by using a spin-coating process, and annealing and drying to obtain the ZnO film.
Further, the PEDOT: the usage amount of PSS is 70-90 mul, the rotation speed of the spin coating process is 1000-.
Furthermore, the concentration of the TFB is 8mg/ml, the rotation speed of the spin coating process is 1000-.
Further, when the silicon dioxide particles modified by the silane coupling agent are prepared, the oil bath temperature is 60-100 ℃, and the holding time is 2-4 h; the centrifugal speed and the time are 3000-; the temperature of further modification by using octadecanoic acid is 50-80 ℃, and the time is 2-4 h; the centrifugal rotation speed and the centrifugal time are respectively 6000-8000rpm and 5min, and finally the prepared normal hexane solution of the silicon dioxide nano particles is dissolved by weighing a proper amount of silicon dioxide nano particle powder according to the concentration range of 0.1 mg/ml-1 g/ml and using the normal hexane solution with the corresponding amount.
Further, in the selenium precursor solution, the ratio of selenium powder to sulfur powder is 1: 0.8, the stirring temperature is 140-160 ℃; the method comprises the steps of preparing a quantum dot layer, carrying out quantum dot cleaning.
Further, in the preparation of the ZnO solution, the mass ratio of zinc acetate dihydrate to TMAH is 1: 1.4-2, stirring the zinc acetate dihydrate and the DMSO solution at the temperature of 50 ℃ and the rotation speed of 450 rpm; the concentration of the used DMSO solution is analytically pure, the ethanol solution of TMAH is dripped into the zinc acetate solution at a constant speed when used, and the stirring speed and the stirring time are respectively 500rpm and 1 h; the ratio of ethyl acetate to the reaction solution was 1:1, the rotating speed and the time of centrifugation are 3000-6000rpm and 3min respectively; the spin coating parameter of ZnO is 2000-4000rpm for 45s, and the annealing parameters are respectively 130-150 ℃ for annealing for 10-30 min.
Compared with the prior art, the invention has the following beneficial effects:
the preparation method is novel, the preparation cost is low, the preparation process is simple, and the CdSe quantum dot layer is doped with the silicon dioxide material, so that the modified silicon dioxide particles can be well combined with the quantum dots, the pores among the quantum dots are filled to a certain degree, the compactness of the quantum dot light-emitting layer is improved, and the improvement of the performances of the quantum dot light-emitting diode device such as brightness is achieved.
Drawings
FIG. 1 is a schematic diagram of an ITO glass substrate structure according to an embodiment of the invention
FIG. 2 shows an embodiment of the present invention coated with a layer of PEDOT: ITO glass substrate structure schematic diagram of PSS film
FIG. 3 is a schematic diagram of the structure of an ITO glass substrate for forming a TFB thin film according to an embodiment of the present invention
FIG. 4 is a schematic structural diagram of an ITO glass substrate spin-coated with quantum dots according to an embodiment of the invention
FIG. 5 is a schematic view of the structure of an ITO glass substrate having ZnO formed thereon according to an embodiment of the present invention
FIG. 6 is a schematic diagram of a final LED structure according to an embodiment of the present invention
In the figure: 1-glass substrate, 2-ITO layer, 3-PEDOT: PSS film, 4-TFB film, 5-CdSe quantum dots, 6-SiO2 nano particles, 7-electron transport layer and 8-Ag electrode.
Detailed Description
The invention is further explained below with reference to the drawings and the embodiments.
Example one
(1) In the presence of anhydrous ethanol/water of 9: 1, adding 25wt.% of silane coupling agent, and stirring for 30min for hydrolysis. Weighing a certain amount of silicon dioxide powder, adding the silicon dioxide powder into the solution, reacting for 3h at a constant temperature of 80 ℃ by using an oil bath, centrifuging the product at 6000rpm, washing for multiple times by using ethanol, and finally drying the product in a vacuum oven at 60 ℃ for 12h to obtain the silicon dioxide powder modified by the silane coupling agent. Mixing 1ml of octadecanoic acid and 9ml of dimethylbenzene, adding 50mg of silicon dioxide powder modified by a silane coupling agent, reacting for 3 hours at 60 ℃, centrifuging for 5 minutes at 6000rpm, washing for multiple times by using ethanol, and drying for 12 hours at 60 ℃.5mg of silicon dioxide powder modified by a silane coupling agent and octadecanoic acid is weighed and dissolved in 50ml of n-hexane solution to obtain the n-hexane solution of silicon dioxide nano particles with the concentration of 0.1 mg/ml.
(2) Weighing 0.6585g of zinc acetate dihydrate medicine, placing the medicine in a clean reagent bottle with a clean magneton and a capacity of 100 ml, then using a pipette to extract 30 ml of DMSO solution, dropwise adding the DMSO solution into the reagent bottle, placing the reagent bottle on a heating and stirring table, setting the temperature at 50 ℃ and the rotating speed at 450rpm, and dissolving the zinc acetate dihydrate into the DMSO solvent through violent stirring; and secondly, 0.9062 g of TMAH medicament is weighed, placed in a small reagent bottle, 10 ml of ethanol solution is extracted by a liquid transfer gun, added into the reagent bottle, and stirred until the mixture is clear and transparent. And then dripping the prepared TMAH solution into the DMSO precursor at a constant speed within 8 min, and keeping the rotation speed at 500rpm for 1 h. After the reaction was completed, the reaction solution was subjected to a precipitation operation with ethyl acetate in an equal ratio. Respectively extracting reaction liquid and ethyl acetate solution with the same amount (5 ml) by using a rubber-tipped dropper, placing the reaction liquid and the ethyl acetate solution into a centrifugal tube, centrifuging for 3min at the rotating speed of 3000rpm, taking out the centrifugal tube after the centrifugation is finished, and pouring and discarding supernatant liquid to dissolve the reaction liquid and the ethyl acetate solution;
(3) taking 0.0158g of selenium powder and 0.128g of sulfur powder, adding 2ml of TOP solution into a three-neck flask, and stirring at 150 ℃ to dissolve the solution to prepare a precursor solution of selenium; weighing 0.0257g of cadmium oxide and 0.878g of zinc acetate in a three-neck flask, adding 5ml of OA solution, stirring at 150 ℃ for 30min, then injecting 15ml of ODE solution, raising the temperature of the high solution to 300 ℃, rapidly injecting selenium precursor solution, keeping for 10min, exciting by using an ultraviolet lamp at 2min, finally cooling the quantum dot solution by using a water bath mode, dissolving by using n-hexane, and standing at low temperature. Dissolving the supernatant of the quantum dot solution by using methanol before spin coating, then adding n-hexane, extracting the upper layer solution, adding excessive absolute ethyl alcohol, and centrifuging for 10min at 6000 revolutions, and then dissolving the quantum dots by using the n-hexane of the prepared silicon dioxide nano particles;
(4) selecting an ITO conductive glass sheet, firstly respectively ultrasonically cleaning ITO for 15min by using deionized water and glass water, then wiping the ITO clean by using dust-free cloth, then respectively ultrasonically cleaning the ITO for 15min by using acetone and ethanol, and finally drying in an oven. Before spin-coating the film, carrying out plasma ozone treatment on the ITO for 20-30 min;
(5) placing the substrate on a spin coater, setting the rotation speed to be 4000rpm, keeping the rotation speed for 40s, selecting PEDOT: PSS 80 mul, quickly dripping the solution on the surface of the substrate while pressing a start button of a spin coater, and annealing at 120 ℃ for 20min after the spin coating is finished;
(6) dissolving TFB in chlorobenzene solution to obtain solution with concentration of 8mg/ml, filtering with 0.2 μm filter head, adjusting uniform glue machine parameter to 3000rpm, and maintaining for 30 s. And (3) pressing a start button of the spin coater, simultaneously taking 65 mu l of solution by using a pipette, quickly dripping the solution on the surface of the device, spin-coating, and then placing the device on an electric hot plate for annealing at 120 ℃ for 20 min.
(7) Placing a substrate on a spin coater, adjusting the rotation speed of the spin coater to 4000rpm, keeping the rotation speed for 45s, selecting 85 mul of prepared quantum dot precursor solution by using a liquid-transferring gun, quickly dripping the precursor solution at the center of the surface of the substrate while pressing a start button of the spin coater, placing the substrate on a heating table after the spin coating is finished, and keeping the temperature at 120 ℃ for annealing for 20 min.
(8) Filtering ZnO butanol solution with 0.2 μm filter head, applying 110 μ l ZnO solution on ITO glass surface with a pipette in spin coating process, adjusting rotation speed of spin coater to 4000rpm for 45s, and annealing at 150 deg.C for 20 min.
(9) And (3) depositing silver with the thickness of 60 nm at the deposition rate of 0.3 nm/s by thermal deposition under the vacuum condition, and drying at room temperature for 1h to obtain the light-emitting diode.
Example two
(1) In the presence of anhydrous ethanol/water of 9: 1, adding 25wt.% of silane coupling agent, and stirring for 30min for hydrolysis. Weighing a certain amount of silicon dioxide powder, adding the silicon dioxide powder into the solution, reacting for 3h at a constant temperature of 80 ℃ by using an oil bath, centrifuging the product at 6000rpm, washing for multiple times by using ethanol, and finally drying the product in a vacuum oven at 60 ℃ for 12h to obtain the silicon dioxide powder modified by the silane coupling agent. Mixing 1ml of octadecanoic acid and 9ml of dimethylbenzene, adding 50mg of silicon dioxide powder modified by a silane coupling agent, reacting for 3 hours at 60 ℃, centrifuging for 5 minutes at 6000rpm, washing for multiple times by using ethanol, and drying for 12 hours at 60 ℃. Weighing 25mg of silicon dioxide powder modified by a silane coupling agent and octadecanoic acid, and dissolving the silicon dioxide powder by using 50ml of n-hexane to obtain an n-hexane solution of silicon dioxide nanoparticles with the concentration of 0.5 mg/ml.
(2) Weighing 0.6585g of zinc acetate dihydrate medicine, placing the medicine in a clean reagent bottle with a clean magneton and a capacity of 100 ml, then using a pipette to extract 30 ml of DMSO solution, dropwise adding the DMSO solution into the reagent bottle, placing the reagent bottle on a heating and stirring table, setting the temperature at 50 ℃ and the rotating speed at 450rpm, and dissolving the zinc acetate dihydrate into the DMSO solvent through violent stirring; secondly, 1.317 g of TMAH medicament is weighed and placed in a small reagent bottle, 10 ml of ethanol solution is extracted by a pipette, added into the reagent bottle and stirred until the mixture is clear and transparent. And then dripping the prepared TMAH solution into the DMSO precursor at a constant speed within 8 min, and keeping the rotation speed at 500rpm for 1 h. After the reaction was completed, the reaction solution was subjected to a precipitation operation with ethyl acetate in an equal ratio. Respectively extracting reaction liquid and ethyl acetate solution with the same amount (5 ml) by using a rubber-tipped dropper, placing the reaction liquid and the ethyl acetate solution into a centrifugal tube, centrifuging for 3min at the rotating speed of 3000rpm, taking out the centrifugal tube after the centrifugation is finished, and pouring and discarding supernatant liquid to dissolve the reaction liquid and the ethyl acetate solution;
(3) taking 0.0158g of selenium powder and 0.128g of sulfur powder, adding 2ml of TOP solution into a three-neck flask, and stirring at 150 ℃ to dissolve the solution to prepare a precursor solution of selenium; weighing 0.0257g of cadmium oxide and 0.878g of zinc acetate in a three-neck flask, adding 5ml of OA solution, stirring at 150 ℃ for 30min, then injecting 15ml of ODE solution, raising the temperature of the high solution to 300 ℃, rapidly injecting selenium precursor solution, keeping for 10min, exciting by using an ultraviolet lamp at 2min, finally cooling the quantum dot solution by using a water bath mode, dissolving by using n-hexane, and standing at low temperature. Dissolving the quantum dot solution supernatant with methanol before spin coating, adding n-hexane, extracting the supernatant, adding excess absolute ethanol, and centrifuging at 6000rpm for 10min, and dissolving the quantum dot with the prepared n-hexane of silicon dioxide nanoparticles.
(4) Selecting an ITO conductive glass sheet, firstly respectively ultrasonically cleaning ITO for 15min by using deionized water and glass water, then wiping the ITO clean by using dust-free cloth, then respectively ultrasonically cleaning the ITO for 15min by using acetone and ethanol, and finally drying in an oven. Before spin-coating the film, carrying out plasma ozone treatment on the ITO for 20-30 min;
(5) placing the substrate on a spin coater, setting the rotating speed to be 3000rpm, keeping the rotating speed for 40s, selecting PEDOT: PSS 80 mul, quickly dripping the solution on the surface of the substrate while pressing a start button of a spin coater, and annealing at 110 ℃ for 20min after the spin coating is finished;
(6) dissolving TFB in chlorobenzene solution to prepare solution with concentration of 8mg/ml, filtering the TFB chlorobenzene solution by using a 0.2-micron filter head, adjusting parameters of a spin coater to 4000rpm, and keeping for 30 s. And (3) pressing a start button of a spin coater, simultaneously taking 65 mu l of solution by using a pipette, quickly dripping the solution on the surface of the device, spin-coating, and then placing the device on an electric hot plate for annealing at 110 ℃ for 20 min.
(7) Placing a substrate on a spin coater, adjusting the rotation speed of the spin coater to 3000rpm, keeping for 45s, selecting 85 mul of prepared quantum dot precursor solution by using a liquid-transferring gun, quickly dripping the precursor solution at the center of the surface of the substrate while pressing a start button of the spin coater, placing the substrate on a heating table after the spin coating is finished, and keeping the temperature at 110 ℃ for annealing for 20 min.
(8) Filtering ZnO butanol solution with 0.2 μm filter head, applying 110 μ l ZnO solution on ITO glass surface with a pipette in spin coating process, adjusting rotation speed of spin coater to 4000rpm for 45s, and annealing at 150 deg.C for 20 min.
(9) And (3) depositing silicon dioxide with the thickness of 60 nm at the deposition rate of 0.3 nm/s by thermal deposition under the vacuum condition, and drying at room temperature for 1h to obtain the light-emitting diode.
EXAMPLE III
(1) In the presence of anhydrous ethanol/water of 9: 1, adding 25wt.% of silane coupling agent, and stirring for 30min for hydrolysis. Weighing a certain amount of silicon dioxide powder, adding the silicon dioxide powder into the solution, reacting for 3h at a constant temperature of 80 ℃ by using an oil bath, centrifuging the product at 6000rpm, washing for multiple times by using ethanol, and finally drying the product in a vacuum oven at 60 ℃ for 12h to obtain the silicon dioxide powder modified by the silane coupling agent. Mixing 1ml of octadecanoic acid and 9ml of dimethylbenzene, adding 50mg of silicon dioxide powder modified by a silane coupling agent, reacting for 3 hours at 60 ℃, centrifuging for 5 minutes at 6000rpm, washing for multiple times by using ethanol, and drying for 12 hours at 60 ℃. 50mg of silica powder modified by a silane coupling agent and octadecanoic acid is weighed and dissolved by using 50ml of n-hexane to obtain an n-hexane solution of silica nanoparticles with the concentration of 1 mg/ml.
(2) Weighing 0.6585g of zinc acetate dihydrate medicine, placing the medicine in a clean reagent bottle with a clean magneton and a capacity of 100 ml, then using a pipette to extract 30 ml of DMSO solution, dropwise adding the DMSO solution into the reagent bottle, placing the reagent bottle on a heating and stirring table, setting the temperature at 50 ℃ and the rotating speed at 450rpm, and dissolving the zinc acetate dihydrate into the DMSO solvent through violent stirring; 1.1194 g of TMAH medicament is weighed, placed in a small reagent bottle, 10 ml of ethanol solution is extracted by a pipette, added into the reagent bottle and stirred until the solution is clear and transparent. And then dripping the prepared TMAH solution into the DMSO precursor at a constant speed within 8 min, and keeping the rotation speed at 500rpm for 1 h. After the reaction was completed, the reaction solution was subjected to a precipitation operation with ethyl acetate in an equal ratio. Respectively extracting reaction liquid and ethyl acetate solution with the same amount (5 ml) by using a rubber-tipped dropper, placing the reaction liquid and the ethyl acetate solution into a centrifugal tube, centrifuging for 3min at the rotating speed of 3000rpm, taking out the centrifugal tube after the centrifugation is finished, and pouring and discarding supernatant liquid to dissolve the reaction liquid and the ethyl acetate solution;
(3) taking 0.0158g of selenium powder and 0.128g of sulfur powder, adding 2ml of TOP solution into a three-neck flask, and stirring at 150 ℃ to dissolve the solution to prepare a precursor solution of selenium; weighing 0.0257g of cadmium oxide and 0.878g of zinc acetate in a three-neck flask, adding 5ml of OA solution, stirring at 150 ℃ for 30min, then injecting 15ml of ODE solution, raising the temperature of the high solution to 300 ℃, rapidly injecting selenium precursor solution, keeping for 10min, exciting by using an ultraviolet lamp at 2min, finally cooling the quantum dot solution by using a water bath mode, dissolving by using n-hexane, and standing at low temperature. Dissolving the quantum dot solution supernatant with methanol before spin coating, adding n-hexane, extracting the supernatant, adding excess absolute ethanol, and centrifuging at 6000rpm for 10min, and dissolving the quantum dot with the prepared n-hexane of silicon dioxide nanoparticles.
(4) Selecting an ITO conductive glass sheet, firstly respectively ultrasonically cleaning ITO for 15min by using deionized water and glass water, then wiping the ITO clean by using dust-free cloth, then respectively ultrasonically cleaning the ITO for 15min by using acetone and ethanol, and finally drying in an oven. Before spin-coating the film, carrying out plasma ozone treatment on the ITO for 20-30 min;
(5) placing the substrate on a spin coater, setting the rotation speed to be 5000rpm, keeping the rotation speed for 40s, selecting PEDOT: PSS 90 mul, quickly dripping the solution on the surface of the substrate while pressing a start button of a spin coater, and annealing at 120 ℃ for 20min after the spin coating is finished;
(6) dissolving TFB in chlorobenzene solution to prepare solution with concentration of 8mg/ml, filtering the TFB chlorobenzene solution by using a 0.2-micron filter head, adjusting the parameter of a spin coater to 5000rpm, and keeping for 30 s. And (3) pressing a start button of the spin coater, simultaneously taking 65 mu l of solution by using a pipette, quickly dripping the solution on the surface of the device, spin-coating, and then placing the device on an electric hot plate for annealing at 130 ℃ for 20 min.
(7) Placing a substrate on a spin coater, adjusting the rotation speed of the spin coater to 2000rpm, keeping the rotation speed for 45s, selecting 110 mul of prepared quantum dot precursor solution by using a liquid-transferring gun, quickly dripping the precursor solution at the center of the surface of the substrate while pressing a start button of the spin coater, placing the substrate on a heating table after the spin coating is finished, and keeping the temperature at 130 ℃ for annealing for 20 min.
(8) Filtering ZnO butanol solution with 0.2 μm filter head, applying 110 μ l ZnO solution on ITO glass surface with a pipette in spin coating process, adjusting rotation speed of spin coater to 4000rpm for 45s, and annealing at 150 deg.C for 20 min.
(9) And (3) depositing silver with the thickness of 60 nm at the deposition rate of 0.3 nm/s by thermal deposition under the vacuum condition, and drying at room temperature for 1h to obtain the light-emitting diode.
The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the claims of the present invention should be covered by the present invention.
Claims (10)
1. A method for manufacturing a CdSe quantum dot doped with silicon dioxide and a light-emitting diode device is characterized by comprising the following steps:
step S1: selecting ITO conductive glass as a substrate of the light-emitting diode;
step S2: spin coating PEDOT on ITO conductive glass: PSS solution, and forming a film through annealing and drying;
step S3: and (3) preparing a hole transport layer solution, and spin-coating on PEDOT: annealing and drying the PSS film layer to form a hole transport layer;
step S4: modifying the silicon dioxide nanoparticles by using a silane coupling agent KH550 and octadecanoic acid, and dissolving the nanoparticles by using n-hexane to prepare an n-hexane solution of the silicon dioxide nanoparticles;
step S5: preparing CdSe quantum dots, preparing a mixed solution of the CdSe quantum dots and silicon dioxide nano particles, and spin-coating the mixed solution on a hole transport layer to form a CdSe quantum dot light-emitting central layer;
step S6: preparing a ZnO solution, and spin-coating the ZnO solution on the quantum dot film layer to form an electron transport layer of zinc oxide;
step S7: and (4) evaporating silver on the sample wafer prepared in the step S6 by using an evaporation technology to form a silver electrode, so as to prepare the CdSe quantum dot light-emitting diode doped with silicon dioxide.
2. The method of claim 1, wherein the step S3 is specifically as follows:
step S31, dissolving TFB in chlorobenzene to prepare a hole transport layer solution;
step S32 spin coating the solution to a solution that has been spin coated with PEDOT: and annealing and drying the ITO conductive glass substrate of the PSS film to form a hole transport layer.
3. The method of claim 1, wherein the step S4 is specifically performed by:
step S41: weighing a certain amount of silicon dioxide nano particles, adding the silicon dioxide nano particles into an absolute ethyl alcohol/water mixed solution containing a silane coupling agent KH550 after stirring and hydrolysis, violently stirring to uniformly disperse silicon dioxide, then stirring for a period of time under the condition of oil bath, washing for a plurality of times by using ethyl alcohol after centrifugation, and drying to obtain silicon dioxide particles modified by the silane coupling agent;
step S42: weighing a certain amount of stearic acid, dissolving in xylene, uniformly dispersing silica particles modified by a silane coupling agent under stirring, reacting for a period of time at constant temperature, centrifugally washing, drying, and dissolving by using a proper amount of n-hexane to prepare the n-hexane solution of the modified silica nanoparticles.
4. The method of claim 1, wherein the step S5 is specifically as follows:
step S51, stirring and dissolving selenium powder, sulfur powder and TOP solution at a preset temperature to prepare a precursor solution of selenium;
step S52, stirring cadmium oxide, zinc acetate and oleic acid for a preset time, then injecting a small amount of ODE solution, and raising the temperature of the solution;
s53, taking a selenium precursor solution, quickly injecting the selenium precursor solution into the solution when the temperature of the solution reaches a preset value, keeping the solution for a period of time, and simultaneously exciting the solution by using an ultraviolet lamp; finally, rapidly cooling the quantum dot solution in a water bath mode, and diluting with n-hexane to obtain the quantum dot solution;
step S54: taking out the supernatant of a part of the quantum dot solution after standing, dissolving oleic acid by using a proper amount of methanol, then adding a proper amount of n-hexane solution for dissolving, taking out the upper layer solution, adding a proper amount of absolute ethyl alcohol for centrifuging, and finally dissolving the precipitate by using the n-hexane solution of silicon dioxide nano particles to obtain a purified quantum dot solution;
and step S55, taking out the purified quantum dot solution, and preparing the CdSe quantum dot film on the ITO glass substrate with the hole transport layer in a spin coating mode.
5. The method of claim 1, wherein the step S6 is specifically as follows:
step S61: mixing zinc acetate dihydrate with a DMSO solution, heating and stirring at a preset temperature to prepare a DMSO solution of zinc acetate;
step S62, mixing TMAH and ethanol, and stirring until the mixture is clear and transparent to obtain an ethanol solution of TMAH;
step S63, dropwise adding an ethanol solution of TMAH into a zinc acetate solution, and heating and stirring for a period of time at a preset temperature; after the reaction is finished, precipitating the reaction solution by using a proper amount of ethyl acetate, obtaining ZnO precipitate by a centrifugal filtration method, dissolving by using a proper amount of butanol solution, and filtering to obtain a ZnO solution;
step S64: and (3) spin-coating the ZnO solution on the ITO glass substrate with the quantum dot film by using a spin-coating process, and annealing and drying to obtain the ZnO film.
6. The method of claim 1, wherein the CdSe quantum dot doped with silicon dioxide and the light emitting diode device are fabricated by: the PEDOT: the usage amount of PSS is 70-90 mul, the rotation speed of the spin coating process is 1000-.
7. The method as claimed in claim 2, wherein the TFB concentration is 8mg/ml, the rotation speed of the spin coating process is 1000-5000rpm, the annealing time is 10-30min, and the annealing temperature is 110-130 ℃.
8. The method for preparing CdSe quantum dot and LED device doped with silica as claimed in claim 3, wherein the oil bath temperature is 60-100 deg.C and the holding time is 2-4 h; the centrifugal speed and the time are 3000-; the temperature of further modification by using octadecanoic acid is 50-80 ℃, and the time is 2-4 h; the centrifugal rotation speed and the centrifugal time are respectively 6000-8000rpm and 5min, and finally the prepared normal hexane solution of the silicon dioxide nano particles is dissolved by weighing a proper amount of silicon dioxide nano particle powder according to the concentration range of 0.1 mg/ml-1 g/ml and using the normal hexane solution with the corresponding amount.
9. The method for preparing CdSe quantum dot and LED device doped with silicon dioxide as claimed in claim 4, wherein the ratio of selenium powder to sulfur powder in the selenium precursor solution is 1: 0.8, the stirring temperature is 140-160 ℃; the method comprises the steps of preparing a quantum dot layer, carrying out quantum dot cleaning.
10. The method for preparing the CdSe quantum dot and the light-emitting diode device doped with silicon dioxide as claimed in claim 5, wherein the mass ratio of zinc acetate dihydrate to TMAH in the preparation of the ZnO solution is 1: 1.4-2, stirring the zinc acetate dihydrate and the DMSO solution at the temperature of 50 ℃ and the rotation speed of 450 rpm; the concentration of the used DMSO solution is analytically pure, the ethanol solution of TMAH is dripped into the zinc acetate solution at a constant speed when used, and the stirring speed and the stirring time are respectively 500rpm and 1 h; the ratio of ethyl acetate to the reaction solution was 1:1, the rotating speed and the time of centrifugation are 3000-6000rpm and 3min respectively; the spin coating parameter of ZnO is 2000-4000rpm for 45s, and the annealing parameters are respectively 130-150 ℃ for annealing for 10-30 min.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882383A (en) * | 2015-05-28 | 2015-09-02 | 福州大学 | Light-operated quantum dot film transistor preparation method based on plasma excimer enhancing |
| CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
| CN105098075A (en) * | 2015-07-14 | 2015-11-25 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method of light-emitting device |
| CN108998004A (en) * | 2018-08-01 | 2018-12-14 | 北京苏瑞同创科技有限公司 | A kind of preparation method of high stability quantum dot microsphere |
| US20190115555A1 (en) * | 2016-07-01 | 2019-04-18 | Boe Technology Group Co., Ltd. | Quantum-dot electroluminescent device, method for preparing the same, and display device |
| CN109841745A (en) * | 2019-03-25 | 2019-06-04 | 南昌航空大学 | It is a kind of using transition metal oxide doped quantum dot as the preparation method of luminescent layer |
-
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104882383A (en) * | 2015-05-28 | 2015-09-02 | 福州大学 | Light-operated quantum dot film transistor preparation method based on plasma excimer enhancing |
| CN105070849A (en) * | 2015-07-14 | 2015-11-18 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof |
| CN105098075A (en) * | 2015-07-14 | 2015-11-25 | Tcl集团股份有限公司 | Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method of light-emitting device |
| US20190115555A1 (en) * | 2016-07-01 | 2019-04-18 | Boe Technology Group Co., Ltd. | Quantum-dot electroluminescent device, method for preparing the same, and display device |
| CN108998004A (en) * | 2018-08-01 | 2018-12-14 | 北京苏瑞同创科技有限公司 | A kind of preparation method of high stability quantum dot microsphere |
| CN109841745A (en) * | 2019-03-25 | 2019-06-04 | 南昌航空大学 | It is a kind of using transition metal oxide doped quantum dot as the preparation method of luminescent layer |
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