CN111950141A - Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface - Google Patents

Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface Download PDF

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CN111950141A
CN111950141A CN202010748161.4A CN202010748161A CN111950141A CN 111950141 A CN111950141 A CN 111950141A CN 202010748161 A CN202010748161 A CN 202010748161A CN 111950141 A CN111950141 A CN 111950141A
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曾然
倪鹏飞
张明月
陈伟强
杨淑娜
李浩珍
胡淼
李齐良
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Hangzhou Dianzi University
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Abstract

The invention discloses a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface, which comprises the following steps: s11, establishing a model of a vacuum and chiral atomic medium interface; s12, determining the electromagnetic property of the electromagnetic wave at the interface of vacuum and chiral atomic medium; s13, determining boundary conditions and initial conditions; s14, calculating a transmission matrix according to the boundary and the initial condition; s15, calculating a reflection coefficient of electromagnetic waves from vacuum to a chiral atomic medium interface according to the transmission matrix; and S16, analyzing the polarization deflection rate of the reflected wave and the phase difference of the reflected wave under the vacuum and chiral atomic medium interface model to obtain the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface. The Kerr polarization deflection method for analyzing the vacuum and chiral atomic medium interface according to the polarization deflection rate can accurately analyze the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.

Description

Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface
Technical Field
The invention relates to the technical field of quantum optics, in particular to a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface.
Background
Polarization of an electromagnetic wave refers to the manner in which the magnitude and direction of the electromagnetic wave changes over time at any given point in space. Kerr polarization deflection is the change in polarization state of the reflected wave compared to the incident wave. The device for generating polarized light generally uses a light wave plate, generates light wave delay by utilizing optical path difference and phase difference of light waves in the device, and finally synthesizes light waves in different polarization states, and generates different polarized light by utilizing special properties of a novel material, so that the device is more convenient and has huge application potential.
The most obvious feature of chiral materials is the cross-polarization of the electromagnetic field. The common chiral material is a material which exists in nature, and the chiral atomic medium is an artificial material, so that the defects of the natural chiral material are overcome. The chiral atomic medium is formed by applying a laser field and probe light on an atomic gas which does not have chirality per se, so that the atomic gas has chirality, and the chiral coefficient can be controlled according to the amplitude and phase of the laser field. Coherent laser fabrication of quantum states of atoms and molecules results in quantum interference of optical transition amplitudes. In this way, the optical properties of the medium can be significantly altered, resulting in electromagnetically induced transparency and related effects. When the control field applied to the atomic medium is changed, the optical characteristics of the atomic medium are changed, so that the effect of controlling Kerr deflection is achieved. At present, the chiral atomic medium as an artificial chiral material has wide application prospect in the fields of realizing photonic crystal plates and waveguides with ultra-low speed light speed or realizing metamaterial with negative refractive index and the like. Therefore, the application provides a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface, and a chiral atomic medium theoretical model is closer to an actual chiral atomic medium and has application value when being used as a test model; meanwhile, a new way is provided for controlling Kerr polarization deflection, and an optical method is provided for analyzing polarization properties.
In order to achieve the purpose, the invention adopts the following technical scheme:
a Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interfaces, comprising:
s1, establishing a model of a vacuum and chiral atomic medium interface;
s2, determining the electromagnetic property of the electromagnetic wave at the interface of vacuum and chiral atomic medium;
s3, determining boundary conditions and initial conditions;
s4, calculating a transmission matrix according to the boundary and the initial condition;
s5, calculating a reflection coefficient of electromagnetic waves from vacuum to a chiral atomic medium interface according to the transmission matrix;
and S6, analyzing the polarization deflection rate of the reflected wave and the phase difference of the reflected wave under the vacuum and chiral atomic medium interface model to obtain the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
Further, the step S1 is specifically:
the detection light obliquely enters an interface of a vacuum and a chiral atomic medium, a control field acts in the atomic medium, the part on the x axis is vacuum, and the corresponding dielectric constant and magnetic conductivity are respectively1,μ1(ii) a The lower half part of the x-axis is atomic gas which is a chiral atomic medium and has a corresponding dielectric constant and magnetic permeabilityc,μcChiral coefficient is kappaEH,κHE。
Further, in step S2, the electromagnetic property of the electromagnetic wave at the interface between the vacuum and the chiral atomic medium is determined as follows:
Figure BDA0002609078090000021
D＝0E+P
B＝μ0(H+M)
wherein,0and mu0Respectively represent the dielectric constant and the magnetic permeability in vacuum;c,μcrespectively representing the dielectric constant and the permeability coefficient of the chiral atomic medium; kappaEHAnd kappaHERepresenting a chiral coefficient; d represents a potential shift vector; b represents magnetic induction.
Further, the step S3 determines an initial condition, which is expressed as:
vacuum1，μ1The medium incident, reflected electric and magnetic field components are:
Figure BDA0002609078090000022
Figure BDA0002609078090000031
Figure BDA0002609078090000032
Figure BDA0002609078090000033
chiral atomic medium2，μ2，κEH，κHEThe electric and magnetic field components of medium transmission are:
Figure BDA0002609078090000034
Figure BDA0002609078090000035
wherein E isiRepresents the incident electric field strength; hiRepresents the incident magnetic field strength; erRepresenting the reflected electric field strength; hrRepresenting the reflected magnetic field strength; etRepresents the transmission electric field intensity; htRepresenting the transmitted magnetic field strength.
Further, in step S3, a boundary condition is determined, which is expressed as:
n×H＝0
n×E＝0
wherein:
Figure BDA0002609078090000036
wherein,
Figure BDA0002609078090000037
representing the chiral coefficient.
Further, in step S4, a transmission matrix is calculated according to the boundary and the initial condition, and is represented as:
the transmission matrix is obtained according to equation (1) and the determined boundary conditions, and is expressed as:
Figure BDA0002609078090000038
further, the step S5 is specifically:
from the relationship between the incident light and the reflected light, a reflection coefficient is obtained, expressed as:
Figure BDA0002609078090000041
according to the formula (9) and the formula (10), the following results are obtained:
Figure BDA0002609078090000042
wherein, is11m22-m12m21，ri,jWherein i denotes the reflected light polarization mode, j denotes the incident light polarization mode;
obtaining a reflection matrix according to the equations (10) and (11):
Figure BDA0002609078090000043
wherein:
Figure BDA0002609078090000044
wherein r isssA reflection coefficient representing reflection of s-waves incident on the s-waves; r ispsA reflection coefficient representing reflection of an s-wave incident p-wave; r isspA reflection coefficient representing reflection of p-wave incident s-wave; r isppRepresenting the reflection coefficient of the p-wave incident s-wave reflection.
Further, the step S6 is specifically:
the polarization deflection rate was calculated from the reflection coefficient:
Figure BDA0002609078090000051
the reflected electromagnetic wave is expressed in jones vector form as:
Figure BDA0002609078090000052
wherein E isrRepresenting the electric field component of the reflected electromagnetic wave; r represents a reflection coefficient matrix; gamma represents the incident wave polarization angle; m and n represent the vertical component and the parallel component of the electric field of the reflected electromagnetic wave, respectively;
m and n are expressed as:
m＝rsscosγ+rpseisinγ (16)
n＝rspcosγ+rppeisinγ (17)
wherein m-component and n-component are s-component and p-component in the reflected electric field, and are respectively expressed by the relation of amplitude and phase
Figure BDA0002609078090000053
And
Figure BDA0002609078090000054
the reflected wave phase difference can be expressed as:
Figure BDA0002609078090000055
the Kerr polarization deflection characteristics of the vacuum and chiral atomic medium interfaces were analyzed according to equations (14) and (18).
Compared with the prior art, the invention has the following advantages:
1. the Kerr polarization deflection method for analyzing the vacuum and chiral atomic medium interface according to the polarization deflection rate can accurately analyze the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
2. The invention can accurately reflect the influence of the phase and amplitude of the control field on Kerr polarization deflection of the vacuum and chiral atomic medium interface.
3. The method can accurately reflect the influence of the incident angle on Kerr polarization deflection of the vacuum and chiral atomic medium interface.
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FIG. 1 is a flow chart of a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface according to an embodiment;
FIG. 2 is a schematic diagram of a vacuum and chiral atomic medium interface model provided in the first embodiment;
FIG. 3 is a schematic diagram of input and output of the system according to the second embodiment;
FIG. 4 is a simulation diagram of the variation curve of PCR with the incident angle and the control field amplitude in the interface of chiral atomic medium, which is obtained by inputting s-polarized wave from vacuum;
FIG. 5(a) is a schematic diagram showing the relationship between the incident angle and the direct reflectivity for the left-and right-hand circularly polarized waves and different control field amplitudes provided in the second embodiment;
FIG. 5(b) is a schematic diagram showing the relationship between the incident angle and the deflection reflectivity for the left-hand and right-hand circularly polarized waves and different control field amplitudes provided in the second embodiment;
FIG. 5(c) is a schematic diagram showing the relationship between the incident angle and the PCR for the left-hand and right-hand circularly polarized waves and different control field amplitudes provided in the second embodiment;
fig. 5(d) is a schematic diagram showing the relationship between the incident angle and the phase difference of the reflected wave for the left-hand and right-hand circularly polarized waves and different control field amplitudes provided in the second embodiment.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict.
The invention aims to overcome the defects of the prior art and provides a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface.
Example one
The embodiment provides a Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface, as shown in fig. 1, which includes:
s11, establishing a model of a vacuum and chiral atomic medium interface;
s12, determining the electromagnetic property of the electromagnetic wave at the interface of vacuum and chiral atomic medium;
s13, determining boundary conditions and initial conditions;
s14, calculating a transmission matrix according to the boundary and the initial condition;
s15, calculating a reflection coefficient of electromagnetic waves from vacuum to a chiral atomic medium interface according to the transmission matrix;
and S16, analyzing the polarization deflection rate of the reflected wave and the phase difference of the reflected wave under the vacuum and chiral atomic medium interface model to obtain the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
In step S11, a model of the vacuum and chiral atomic medium interface is created.
As shown in FIG. 2, which is a schematic diagram of a model of the vacuum/chiral atomic medium interface, the detecting light obliquely enters the vacuum/chiral atomic medium interface, the control field acts on the atomic medium, the space on the x-axis is vacuum, and the corresponding dielectric constant and magnetic permeability are respectively1,μ1(ii) a The lower half part of the x-axis is atomic gas which is a chiral atomic medium and has a corresponding dielectric constant and magnetic permeabilityc,μcChiral coefficient is kappaEH,κHE。
In step S12, the electromagnetic properties of the electromagnetic wave at the interface of the vacuum and the chiral atomic medium are determined.
Atomic systems, subject to probing and control fields, induce electromagnetically induced chirality due to the coherent coupling of magnetic dipole transitions with electric dipole transitions. According to D ═0E + P and B ═ μ0The constitutive equation of the chiral atomic medium obtained by (H + M) is as follows:
Figure BDA0002609078090000071
wherein,0and mu0Respectively represent the dielectric constant and the magnetic permeability in vacuum;c,μcrespectively representing the dielectric constant and the permeability coefficient of the chiral atomic medium; kappaEHAnd kappaHERepresenting a chiral coefficient; d represents a potential shift vector; b represents magnetic induction.
In step S13, boundary conditions and initial conditions are determined.
Initial conditions were determined, expressed as:
vacuum1，μ1The medium incident, reflected electric and magnetic field components are:
Figure BDA0002609078090000072
Figure BDA0002609078090000073
Figure BDA0002609078090000074
Figure BDA0002609078090000075
chiral atomic medium2，μ2，κEH，κHEThe electric and magnetic field components of medium transmission are:
Figure BDA0002609078090000081
Figure BDA0002609078090000082
wherein E isiRepresents the incident electric field strength; hiRepresents the incident magnetic field strength; erRepresenting the reflected electric field strength; hrRepresenting the reflected magnetic field strength; etRepresents the transmission electric field intensity; htRepresenting the transmitted magnetic field strength.
Determining boundary conditions, expressed as:
n×H＝0
n×E＝0
wherein:
Figure BDA0002609078090000083
wherein,
Figure BDA0002609078090000084
representing the chiral coefficient.
In step S14, a transfer matrix is calculated based on the boundary conditions and the initial conditions.
According to the constitutive equation formula (1) of the chiral atomic medium, Maxwell equation and determined boundary condition n multiplied by H ═ JsAnd nxe ═ 0, yields the transmission matrix, expressed as:
Figure BDA0002609078090000085
in step S15, a reflection coefficient of the electromagnetic wave incident from the vacuum to the chiral atomic medium interface is calculated from the transmission matrix.
From the relationship between the incident light and the reflected light, a reflection coefficient is obtained, expressed as:
Figure BDA0002609078090000086
according to the formula (9) and the formula (10), the following results are obtained:
Figure BDA0002609078090000091
wherein, is11m22-m12m21，ri,jWherein i denotes the reflected light polarization mode, j denotes the incident light polarization mode;
according to the formulas (10) and (11), the reflection matrix obtained by calculation by using a transmission matrix method is as follows:
Figure BDA0002609078090000092
wherein:
Figure BDA0002609078090000093
wherein r isssA reflection coefficient representing reflection of s-waves incident on the s-waves; r ispsA reflection coefficient representing reflection of an s-wave incident p-wave; r isspA reflection coefficient representing reflection of p-wave incident s-wave; r isppRepresenting the reflection coefficient of the p-wave incident s-wave reflection.
In step S16, the polarization deflection rate of the reflected wave and the phase difference of the reflected wave in the vacuum and chiral atomic medium interface model are analyzed to obtain the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
The polarization deflection rate was calculated from the reflection coefficient:
Figure BDA0002609078090000094
the reflected electromagnetic wave is expressed in jones vector form as:
Figure BDA0002609078090000095
wherein E isrRepresenting the electric field component of the reflected electromagnetic wave; r represents a reflection coefficient matrix; gamma represents the incident wave polarization angle; m and n represent the vertical component and the parallel component of the electric field of the reflected electromagnetic wave, respectively;
the expressions m and n are by definition:
m＝rsscosγ+rpseisinγ (16)
n＝rspcosγ+rppeisinγ (17)
wherein m-component and n-component are s-component and p-component in the reflected electric field, and are respectively expressed by the relation of amplitude and phase
Figure BDA0002609078090000101
And
Figure BDA0002609078090000102
the reflected wave phase difference can be expressed as:
Figure BDA0002609078090000103
the Kerr polarization deflection characteristics of the vacuum and chiral atomic medium interfaces were analyzed according to equations (14) and (18).
Compared with the prior art, the invention has the following advantages:
1. the Kerr polarization deflection method for analyzing the vacuum and chiral atomic medium interface according to the polarization deflection rate can accurately analyze the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
2. The invention can accurately reflect the influence of the phase and amplitude of the control field on Kerr polarization deflection of the vacuum and chiral atomic medium interface.
3. The method can accurately reflect the influence of the incident angle on Kerr polarization deflection of the vacuum and chiral atomic medium interface.
Example two
The Kerr polarization deflection analysis method based on the vacuum and chiral atomic medium interface provided by the embodiment is different from the first embodiment in that:
as shown in fig. 3: the relevant parameters of the chiral atomic medium, such as detuning quantity, are input at the A port, the relevant parameters of the control field, such as amplitude and phase, are input at the B port, and the incidence angle is input at the C port. The direct reflectance and the deflected reflectance are output from the D port, the PCR value is output from the E port, and the reflected light phase difference is output from the F port. By selecting the permutation and combination of the input ports and different values, specific polarization deflection characteristics under different conditions can be obtained, and then the needed polarization deflection is selected according to actual conditions, so that the method has flexibility and practicability.
Assuming that the relevant parameters of the chiral atomic medium input at the a-port are as follows,the atomic density is: n-5 × 1023m-3The spontaneous decay rate is: gamma ray1＝γ4＝0，γ3＝γ5＝1372γ2，γ2＝103/s，γp＝103*γ2(ii) a The atomic gas frequency is: ω 3.14 × 1015rad/s. The amplitude of the control field is input at the B port. The incident angle range is 0-pi/2 at the input of the C port. The output PCR value is obtained at the E port as shown in fig. 4. Under the conditions of left-handed and right-handed circularly polarized waves, the relevant parameters of the input chiral atomic medium at the a port are as follows, and the atomic density is: n-5 × 1023m-3The spontaneous decay rate is: gamma ray1＝γ4＝0，γ3＝γ5＝1372γ2，γ2＝103/s，γp＝103*γ2(ii) a The atomic gas frequency is: ω 3.14 × 1015rad/s, respectively inputting control field amplitude at the B port
Figure BDA0002609078090000111
The incident angle range is 0-pi/2 at the input of the C port. Direct reflectance and deflected reflectance were obtained at the D port, PCR value was obtained at the E port, and reflected light phase difference was obtained at the F port, as shown in fig. 5(a) -5 (D).
The method for analyzing the Kerr polarization deflection of the vacuum-chiral atomic medium interface according to the polarization deflection rate and the phase difference of the reflected light can accurately analyze the Kerr polarization deflection characteristic of the vacuum-chiral atomic medium interface, can accurately reflect the influence of the incidence angle and the amplitude of a control field on the Kerr polarization deflection of the vacuum-chiral atomic medium interface, and accordingly controls the polarization deflection of electromagnetic waves.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims (8)

1. A Kerr polarization deflection analysis method based on a vacuum and chiral atomic medium interface is characterized by comprising the following steps:
s1, establishing a model of a vacuum and chiral atomic medium interface;
s2, determining the electromagnetic property of the electromagnetic wave at the interface of vacuum and chiral atomic medium;
s3, determining boundary conditions and initial conditions;
s4, calculating a transmission matrix according to the boundary and the initial condition;
s5, calculating a reflection coefficient of electromagnetic waves from vacuum to a chiral atomic medium interface according to the transmission matrix;
and S6, analyzing the polarization deflection rate of the reflected wave and the phase difference of the reflected wave under the vacuum and chiral atomic medium interface model to obtain the Kerr polarization deflection characteristic of the vacuum and chiral atomic medium interface.
2. A Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface as claimed in claim 1, wherein said step S1 is specifically:
the detection light obliquely enters an interface of a vacuum and a chiral atomic medium, a control field acts in the atomic medium, the part on the x axis is vacuum, and the corresponding dielectric constant and magnetic conductivity are respectively1,μ1(ii) a The lower half part of the x-axis is atomic gas which is a chiral atomic medium and has a corresponding dielectric constant and magnetic permeabilityc,μcChiral coefficient is kappaEH,κHE。
3. The Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface of claim 2, wherein the step S2 determines the electromagnetic properties of the electromagnetic wave at the vacuum and chiral atomic medium interface as follows:
Figure FDA0002609078080000011
D＝0E+P
B＝μ0(H+M)
wherein,0and mu0Respectively represent the dielectric constant and the magnetic permeability in vacuum;c,μcrespectively representing the dielectric constant and the permeability coefficient of the chiral atomic medium; kappaEHAnd kappaHERepresenting a chiral coefficient; d represents a potential shift vector; b represents magnetic induction.
4. A Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface as claimed in claim 3, wherein said step S3 determines initial conditions expressed as:
vacuum1，μ1The medium incident, reflected electric and magnetic field components are:
Figure FDA0002609078080000021
Figure FDA0002609078080000022
Figure FDA0002609078080000023
Figure FDA0002609078080000024
chiral atomic medium2，μ2，κEH，κHEThe electric and magnetic field components of medium transmission are:
Figure FDA0002609078080000025
Figure FDA0002609078080000026
wherein E isiRepresents the incident electric field strength; hiRepresents the incident magnetic field strength; erRepresenting the reflected electric field strength; hrRepresenting the reflected magnetic field strength; etRepresents the transmission electric field intensity; htRepresenting the transmitted magnetic field strength.
5. A Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface as claimed in claim 4, wherein the boundary condition is determined in step S3 and expressed as:
n×H＝0
n×E＝0
wherein:
Figure FDA0002609078080000027
wherein,
Figure FDA0002609078080000028
representing the chiral coefficient.
6. The Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface of claim 5, wherein the step S4 is to calculate the transmission matrix according to the boundary and initial conditions, expressed as:
the transmission matrix is obtained according to equation (1) and the determined boundary conditions, and is expressed as:
Figure FDA0002609078080000031
7. the Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface as claimed in claim 6, wherein the step S5 is specifically:
from the relationship between the incident light and the reflected light, a reflection coefficient is obtained, expressed as:
Figure FDA0002609078080000032
according to the formula (9) and the formula (10), the following results are obtained:
Figure FDA0002609078080000033
wherein, is11m22-m12m21，ri,jWherein i denotes the reflected light polarization mode, j denotes the incident light polarization mode;
obtaining a reflection matrix according to the equations (10) and (11):
Figure FDA0002609078080000034
wherein:
Figure FDA0002609078080000035
wherein r isssA reflection coefficient representing reflection of s-waves incident on the s-waves; r ispsA reflection coefficient representing reflection of an s-wave incident p-wave; r isspA reflection coefficient representing reflection of p-wave incident s-wave; r isppRepresenting the reflection coefficient of the p-wave incident s-wave reflection.
8. A Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface as claimed in claim 7, wherein said step S6 is specifically:
the polarization deflection rate was calculated from the reflection coefficient:
Figure FDA0002609078080000041
the reflected electromagnetic wave is expressed in jones vector form as:
Figure FDA0002609078080000042
wherein E isrRepresenting the electric field component of the reflected electromagnetic wave; r represents a reflection coefficient matrix; gamma represents the incident wave polarization angle; m and n represent the vertical component and the parallel component of the electric field of the reflected electromagnetic wave, respectively;
m and n are expressed as:
m＝rsscosγ+rpseisinγ (16)
n＝rspcosγ+rppeisinγ (17)
wherein m-component and n-component are s-component and p-component in the reflected electric field, and are respectively expressed by the relation of amplitude and phase
Figure FDA0002609078080000043
And
Figure FDA0002609078080000044
the reflected wave phase difference can be expressed as:
Figure FDA0002609078080000045
the Kerr polarization deflection characteristics of the vacuum and chiral atomic medium interfaces were analyzed according to equations (14) and (18).
CN202010748161.4A 2020-07-30 2020-07-30 Kerr polarization deflection analysis method based on vacuum and chiral atomic medium interface Pending CN111950141A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112733080A (en) * 2020-12-31 2021-04-30 杭州电子科技大学 goos-Hanchen displacement calculation method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273057A (en) * 2018-09-11 2019-01-25 杭州电子科技大学 Trapped ion the spontaneous emission rate calculation method near a kind of chiral metamaterials interface
CN109948266A (en) * 2019-03-25 2019-06-28 杭州电子科技大学 Based on old insulator-chiral soliton interface Kerr polarization rotation analysis method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109273057A (en) * 2018-09-11 2019-01-25 杭州电子科技大学 Trapped ion the spontaneous emission rate calculation method near a kind of chiral metamaterials interface
CN109948266A (en) * 2019-03-25 2019-06-28 杭州电子科技大学 Based on old insulator-chiral soliton interface Kerr polarization rotation analysis method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112733080A (en) * 2020-12-31 2021-04-30 杭州电子科技大学 goos-Hanchen displacement calculation method

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