CN111949197B - 3D TLC flash memory and data writing method and device thereof - Google Patents
3D TLC flash memory and data writing method and device thereof Download PDFInfo
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Abstract
The embodiment of the invention discloses a 3D TLC flash memory and a data writing method and device thereof. The 3D TLC flash memory comprises a single-layer storage unit buffer data block and a three-layer storage unit storage data block, and the data writing method comprises the following steps: receiving a data writing command; writing corresponding data into the buffer data block of the single-layer storage unit in a single-layer storage mode according to the data writing command; when the data quantity written into the buffer data blocks of the single-layer storage unit is a preset data quantity, selecting one storage data block of the three-layer storage unit, and moving the data of the preset data quantity to the storage data block of the three-layer storage unit. The embodiment of the invention solves the problem of reduced data stability caused by the fact that the floating gate charge quantity in the 3D TLC flash memory is easily influenced under the abnormal conditions such as power failure and the like, and improves the data stability under the abnormal conditions such as power failure and the like.
Description
Technical Field
The embodiment of the invention relates to a data storage technology, in particular to a 3D TLC flash memory and a data writing method and device thereof.
Background
Compared with the traditional hard disk HDD, the nonvolatile Flash memory NAND Flash Solid State Disk (SSD) has the advantages of faster random access time, lower read delay time, more consistent read-write performance and even lower power consumption. However, higher manufacturing costs are required relative to HDDs.
Conventionally, SSDs are constructed based on Single-Level cells (SLC) or Multi-Level cells (MLC), which can only store one Bit of information, so that each Cell has only 0 or 1 two states, triple-Level cells (TLC) can store more than one Bit of information, and TLC traditionally stores three bits of information, so that there are eight possible states (i.e., 000, 001, 010, 011, 100, 101, 110, 111) of SSDs that utilize SLC, which have read-write advantages, although the cost of SSDs that store megabytes (Megabytes) is extremely expensive.
With the development of data in recent years, the demand for SSD with large storage capacity has increased year by year, and 3D TLC flash memory has gradually emerged. However, compared with SLC, in the 3D TLC flash memory, since the memory cell stores three bits (bits) of information, if a power-down phenomenon occurs during writing of new data and when a data block is not fully written, the charge in the memory cell of the new written data is easily affected by the power-down, so that the data in the memory cell is easily damaged.
Disclosure of Invention
The invention provides a 3D TLC flash memory and a data writing method and device thereof, which avoid the problem that when three layers of memory units store data blocks, the data blocks are easy to be subjected to film dropping and generate data errors, and ensure the stability of data storage.
In a first aspect, an embodiment of the present invention provides a data writing method of a 3D TLC flash memory, where the 3D TLC flash memory includes a single-layer memory cell buffer data block and a three-layer memory cell memory data block, and the data writing method includes:
receiving a data writing command;
writing corresponding data into the buffer data block of the single-layer storage unit in a single-layer storage mode according to the data writing command;
when the data quantity written into the buffer data blocks of the single-layer storage unit is a preset data quantity, selecting one storage data block of the three-layer storage unit, and moving the data of the preset data quantity to the storage data block of the three-layer storage unit.
Optionally, when the data block stored in the three-layer memory unit is selected and the data of the preset data amount is moved to the data block stored in the three-layer memory unit, if the power failure phenomenon exists in the 3D TLC flash memory, the data block stored in the three-layer memory unit is reselected and the data of the preset data amount is moved to the data block stored in the three-layer memory unit.
Optionally, the data of the preset data amount includes a preset group of data, and when the data amount written into the buffer data block of the single-layer memory unit is the preset data amount, selecting one of the three-layer memory unit memory data blocks, and moving the data of the preset data amount to the three-layer memory unit memory data block, including:
when the data written into the buffer data block of the single-layer storage unit is data of a preset group, selecting one storage data block of the three-layer storage unit, and moving the data of the preset group to the storage data block of the three-layer storage unit;
and when the sum of the data in the buffer data block of the single-layer storage unit and the last group of data written in the previous storage unit is the data of the preset group, selecting one storage data block of the three-layer storage unit, and moving the data written in the next storage data block to the storage data block of the three-layer storage unit.
Optionally, after the moving the data of the preset group to the three-layer memory cell storage data block, and after the moving the data of the last group written previously and the data written subsequently to the three-layer memory cell storage data block, the method further includes:
and updating a logical-to-physical mapping table of the data except the last group in the preset group of the reciprocal of the storage data block of the three-layer storage unit.
Optionally, when updating the logical-to-physical mapping table of the data except the last group in the preset group of the three-layer storage unit stored data block reciprocal preset group, if the 3D TLC flash memory has a power failure phenomenon, the logical-to-physical mapping table of the data except the last group in the preset group of the three-layer storage unit stored data block reciprocal preset group is updated again.
In a second aspect, an embodiment of the present invention further provides a data writing device of a 3D TLC flash memory, including:
the data receiving module is used for receiving a data writing command;
the data writing module is used for writing corresponding data into the buffer data block of the single-layer storage unit in a single-layer storage mode according to the data writing command;
and the data transfer module is used for selecting a three-layer storage unit storage data block when the data volume written into the single-layer storage unit buffer data block is a preset data volume, and moving the data of the preset data volume to the three-layer storage unit storage data block.
Optionally, the data transfer module is further configured to, when the selecting one of the three-layer storage unit storage data blocks and moving the data of the preset data amount to the three-layer storage unit storage data block, reselect one of the three-layer storage unit storage data blocks and move the data of the preset data amount to the three-layer storage unit storage data block if the 3D TLC flash memory has a power failure phenomenon.
Optionally, the data transfer module is configured to select one of the three-layer storage unit storage data blocks when the data written into the single-layer storage unit buffer data block is data of a preset group, and move the data of the preset group to the three-layer storage unit storage data block;
and when the sum of the data in the buffer data block of the single-layer storage unit and the last group of data written in the previous storage unit is the data of the preset group, selecting one storage data block of the three-layer storage unit, and moving the data written in the next storage data block to the storage data block of the three-layer storage unit.
Optionally, the method further includes a logic mapping table storage module, where the logic mapping table storage module is configured to update a logic-to-physical mapping table of data except for a last group in the last preset group of data blocks stored in the three-layer storage unit after the data of the preset group is moved to the three-layer storage unit to store the data blocks, and after the data of the subsequent writing is moved to the three-layer storage unit to store the data blocks.
In a third aspect, an embodiment of the present invention further provides a 3D TLC flash memory, including a data writing device as in any one of the second aspects.
According to the 3D TLC flash memory and the data writing method and device thereof, the single-layer memory cell buffer data block and the three-layer memory cell storage data block are arranged in the 3D TLC flash memory, after a data writing command is received, corresponding data is written into the single-layer memory cell buffer data block in a single-layer memory mode according to the data writing command, when the data amount written into the single-layer memory cell buffer data block is a preset data amount, the three-layer memory cell storage data block is selected, the data of the preset data amount is moved to the three-layer memory cell storage data block, the characteristics of larger state difference of the floating gate charge amount of the single-layer memory cell buffer data block and higher data storage stability are utilized as the buffer data block for writing data, and after a certain amount of data is written into the single-layer memory cell buffer data block, the data of the preset data amount which is relatively stable and reliable is transferred into the three-layer memory cell storage data block for storage. According to the data writing method of the 3D TLC flash memory, the problem that the data stability is reduced due to the fact that the floating gate charge quantity in the 3D TLC flash memory is easily affected under abnormal conditions such as power failure is solved, the stability of data under the abnormal conditions such as power failure is improved, and meanwhile the stability of data transferred from a single-layer storage unit buffer data block to a three-layer storage unit storage data block is guaranteed.
Drawings
FIG. 1 is a flowchart of a method for writing data into a 3D TLC flash memory according to an embodiment of the present invention;
fig. 2 is a flowchart of a data writing method of a 3D TLC flash memory according to a second embodiment of the present invention;
FIG. 3 is a diagram illustrating data movement according to a second embodiment of the present invention;
fig. 4 is a schematic diagram of a data writing device of a 3D TLC flash memory according to a third embodiment of the present invention;
fig. 5 is a schematic diagram of a data writing device of another 3D TLC flash memory according to the third embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Example 1
Fig. 1 is a flowchart of a data writing method of a 3D TLC flash memory according to an embodiment of the present invention, where the embodiment is applicable to a case where data writing is performed by the 3D TLC flash memory, the method may be performed by a data writing device of the 3D TLC flash memory according to the embodiment of the present invention, and the device may be implemented by software and/or hardware, and may be generally integrated in the 3D TLC flash memory. In addition, the 3D TLC flash memory may be configured to be mainly composed of three layers of memory cell storage data blocks, and allocate a part of the data blocks to be single layer memory cell buffer data blocks at the same time, so as to be written as a single layer memory mode and to be data buffered data blocks. Specifically, referring to fig. 1, the data writing method of the 3D TLC flash memory includes:
s110, receiving a data writing command;
the 3D TLC flash memory may be a NAND flash-based flash memory, and in particular, the NAND flash-based flash memory may include a front-end layer, a conversion layer, and a back-end layer, where the front-end layer is used to communicate with a host, for example, receive a control command sent by the host, where the control command includes a read command, a write command, and an erase command; the conversion layer is used for performing software operations according to the control instruction, wherein the software operations comprise, but are not limited to, conversion from a logical address to a physical address, address mapping table management, wear-leveling management and bad block management; the back end layer is used for performing reading, writing or erasing operation on the NAND flash memory according to the control instruction. The flash memory can receive operation instructions of a user through the front end layer to perform operations such as reading, writing, erasing and the like, and the operation instructions generated when the flash memory receives a data writing command for writing new data into the host by the user.
S120, writing corresponding data into a buffer data block of a single-layer storage unit in a single-layer storage mode according to a data writing command;
first, in a single-layer memory cell buffer data block provided in a memory device, each memory cell can only store one bit of information, i.e., each memory cell has only two states of 0 or 1. In contrast to a three-layer memory cell, where each memory cell can store three bits of information, that is, each memory cell has eight memory states including 000, 001, 010, 011, 100, 101, 110, 111, which are mainly characterized by adjusting the amount of charge in the floating gate, the amount of charge in the floating gate of a buffer data block of a single-layer memory cell is only two states of 0 and 1 and the difference of the amount of charge is large, whereas the amount of charge in the floating gate of a three-layer memory cell stores eight states of 000, 001, 010, 011, 100, 101, 110, 111, where the difference of the amount of charge between the eight states is relatively small. In the process of writing data, the charge quantity in the floating gate of the data block stored in the three-layer memory cell is easily increased or reduced due to the influence of power failure, so that the state of the charge quantity in the floating gate is changed, the stored data is in an error, and the charge quantity of the floating gate in the buffer data block of the single-layer memory cell is in only 0 and 1 states, so that the stability of data storage is higher. By writing data into the buffer data block of the single-layer memory unit, the data can be prevented from being lost when power is lost, so that the stability of the data is ensured.
And S130, selecting a three-layer storage unit storage data block when the data amount written into the single-layer storage unit buffer data block is the preset data amount, and moving the data of the preset data amount to the three-layer storage unit storage data block.
After the data is buffered by the single-layer memory cell buffer data block, the data is required to be continuously transferred to the three-layer memory cell memory data block for storage, and the single-layer memory cell buffer data block is only used for buffering the data and ensuring the stability of the data under abnormal conditions. In order to ensure that the data transferred from the single-layer memory cell buffer data block is relatively stable, the data transfer is required according to the stability characteristic of the data written into the single-layer memory cell buffer data block, and when the data written into the single-layer memory cell buffer data block in real time is written into the single-layer memory cell buffer data block, partial data exist as stable and reliable data, and at the moment, the stable and reliable data can be transferred once as the data with preset data amount and moved into the three-layer memory cell memory data block for storage. The data transfer and storage process is carried out after a certain data amount is accumulated and written in the data write-once process, so that the data can be reliably and stably transferred to the data block stored in the three-layer storage unit while the data block is written in the buffer data block of the single-layer storage unit in real time. It should be noted that the stable and reliable data amount in the certain amount of data is related to the structure of the buffer data block of the single-layer memory cell and also related to the data writing mode, and therefore, the selection of the preset data amount needs to be set by those skilled in the art according to the actual situation.
According to the data writing method of the 3D TLC flash memory, a single-layer storage unit buffer data block and a three-layer storage unit storage data block are arranged in the 3D TLC flash memory, corresponding data is written into the single-layer storage unit buffer data block in a single-layer storage mode according to a data writing command after the data writing command is received, when the data amount written into the single-layer storage unit buffer data block is a preset data amount, the three-layer storage unit storage data block is selected, the data of the preset data amount is moved to the three-layer storage unit storage data block, the characteristics of large floating gate state difference of the single-layer storage unit buffer data block and high data storage stability are utilized as the buffer data block for writing data, and after the single-layer storage unit buffer data block is written into a certain amount of data, the data of the preset data amount is transferred to the three-layer storage unit storage data block for storage relatively stable and reliable. According to the data writing method of the 3D TLC flash memory, the problem that the data stability is reduced due to the fact that the floating gate charge quantity in the 3D TLC flash memory is easily affected under abnormal conditions such as power failure is solved, the stability of data under the abnormal conditions such as power failure is improved, and meanwhile the stability of data transferred from a single-layer storage unit buffer data block to a three-layer storage unit storage data block is guaranteed.
Further, when selecting a three-layer memory cell storage data block and moving the data of the preset data amount to the three-layer memory cell storage data block, abnormal conditions such as power failure may occur, if the 3D TLC flash memory has a power failure phenomenon, then reselecting the three-layer memory cell storage data block and moving the data of the preset data amount to the three-layer memory cell storage data block.
At this time, by moving the data of the buffer data block of the single-layer memory cell to the memory data block of the three-layer memory cell again, the data errors written in the memory data block of the three-layer memory cell, which may be caused by the power failure in the memory data block of the three-layer memory cell, can be avoided, thereby ensuring the accuracy of the data moved to the memory data block of the three-layer memory cell in the buffer data block of the single-layer memory cell.
Example two
The second embodiment of the present invention also provides a data writing method of a 3D TLC flash memory, and fig. 2 is a flowchart of a data writing method of a 3D TLC flash memory provided by the second embodiment of the present invention, and referring to fig. 2, the data writing method includes:
s210, receiving a data writing command.
S220, writing the corresponding data into the buffer data block of the single-layer memory unit in a single-layer memory mode according to the data writing command.
In general, when writing new data in a single-layer memory cell buffer data block, the single-layer memory cell buffer data block may be divided into a plurality of data groups, each group having the same data amount, and for a word line number 384 in one data block in the 3D TLC flash memory, the data block may be divided into a single-layer memory cell buffer data block and into four data written data groups, and the word line number 96 in each data group.
And S230, selecting a three-layer storage unit storage data block when the data written into the single-layer storage unit buffer data block is the data of the preset group, and moving the data of the preset group to the three-layer storage unit storage data block.
Fig. 3 is a schematic diagram of data migration provided in a second embodiment of the present invention, referring to fig. 3, data written in a first single-layer buffer data block may be divided into four data groups including G0, G1, G2 and G3, data written in a second single-layer buffer data block may be divided into four data groups including G4, G5, G6 and G7, and data written in a third single-layer buffer data block may be divided into four data groups including G8, G9, G10 and G11, … …. For example, when the data written in the buffer data block of the single-layer memory cell is five data group data (the data of the preset group is five data group data), that is, when the data is written in the data groups G0, G1, G2, G3 and G4, the data of G0, G1, G2, G3 and G4 may be moved to the three-layer memory cell memory data block.
S240, when the sum of the data in the buffer data block of the single-layer storage unit which is written later and the data of the last group which is written earlier is the data of the preset group, selecting a three-layer storage unit storage data block, and moving the data which is written later to the three-layer storage unit storage data block.
When the data is continuously written into the single-layer buffer data block, that is, when the data is continuously written into the data groups such as G5, G6 and … …, it is necessary to determine the data amount of the subsequently written data, and when the sum of the data in the single-layer buffer data block and the last group of the previously written data is the preset group of the data, it is necessary to move the subsequently written data into the three-layer storage data block, that is, to move the data of G5, G6, G7 and G8 into the three-layer storage data block, that is, when the data amount of the subsequently written data is the data amount of the four data groups, that is, when the subsequently written data includes G5, G6, G7 and G8, the sum of the data amount of the last group of the previously written data is the data of the five data groups.
It should be noted that, in step S220, the data write-in single-layer memory cell buffer data block corresponding to the data write-in command is written in sequence, not write-once, and the operation of moving the data written in the preset group to the three-layer memory cell memory data block in step S230 is alternated in the process of writing in sequence. As shown in fig. 3, after the data groups G0, G1, G2, G3 and G4 in the single-layer memory cell buffer data block are written, the data of G0, G1, G2, G3 and G4 are moved to the three-layer memory cell buffer data block, then the data are written in the data groups G5, G6, G7 and G8 in the single-layer memory cell buffer data block, and then the data of G5, G6, G7 and G8 are moved to the three-layer memory cell memory data block continuously until the data corresponding to the data writing command are all written in the single-layer memory cell buffer data block and moved to the three-layer memory cell memory data block.
With continued reference to fig. 2, after the data of the preset group is moved to the three-layer memory cell storage data block in step S230, and after the data of the subsequent writing is moved to the three-layer memory cell storage data block in step S240, the method further includes:
s250, updating a logical-to-physical mapping table of data except the last group in the preset group of the reciprocal of the storage block of the three-layer storage unit.
When data is transferred from the single-layer memory cell buffer data block to the three-layer memory cell memory data block, the reliability of the data written in the three-layer memory cell memory data block except the last written part of the data is high, so that excessive data can be transferred when the data is transferred to the three-layer memory cell memory data block. After the previous writing is completed, a logic-to-physical mapping table needs to be established for reliable and stable data, namely, the logic-to-physical mapping table of the data except the last group in the data of the preset reciprocal group is updated, and the physical address of the data except the last group is redetermined so as to facilitate the subsequent operations of searching the written data, reading, deleting and the like. With exemplary continued reference to FIG. 3, after the data groups G0, G1, G2, G3, and G4 are written to the tri-level memory cell storage block, the logical-to-physical mapping table of the data dividing G4 in the five-to-five data group, i.e., the data in G0, G1, G2, and G3, needs to be updated. After the data written into the data groups G5, G6, G7 and G8 later are moved to the three-layer memory cell to store the data blocks, the logical-to-physical mapping table of the data divided by G8 in the five last data groups, namely the data in G4, G5, G6 and G7, needs to be updated. At this time, the data after each update is highly reliable, so that normal data reading and writing operations can be performed.
In addition, it should be noted that, not only is the data poor in stability due to abnormal conditions such as power failure in the process of writing data, but also the data is lost due to abnormal conditions such as power failure when updating the logical-to-physical mapping table, so further, when the logical-to-physical mapping table of the data except the last group in the three-layer storage unit storage data block reciprocal preset group is updated, if the power failure phenomenon exists in the 3D TLC flash memory, the logical-to-physical mapping table of the data except the last group in the three-layer storage unit storage data block reciprocal preset group can be updated again.
Example III
An embodiment III of the present invention provides a data writing device of a 3D TLC flash memory, and FIG. 4 is a schematic structural diagram of the data writing device of the 3D TLC flash memory, where a single-layer memory cell buffer data block and a three-layer memory cell memory data block are provided in the 3D TLC flash memory, and referring to FIG. 4, the data writing device of the 3D TLC flash memory includes: a data receiving module 11 for receiving a data writing command; the data writing module 12 is configured to write corresponding data into the single-layer storage unit buffer data block in a single-layer storage mode according to a data writing command; and the data transfer module 13 is used for selecting a three-layer storage unit storage data block when the data amount written into the single-layer storage unit buffer data block is the preset data amount, and transferring the data of the preset data amount to the three-layer storage unit storage data block.
According to the data writing device of the 3D TLC flash memory, the single-layer memory cell buffer data block and the three-layer memory cell storage data block are arranged in the 3D TLC flash memory, after the data receiving module receives a data writing command, the data writing module writes corresponding data into the single-layer memory cell buffer data block in a single-layer memory mode according to the data writing command, when the data amount written into the single-layer memory cell buffer data block is the preset data amount, the data transfer module selects the three-layer memory cell storage data block, the data of the preset data amount is moved to the three-layer memory cell storage data block, the characteristics of large state difference of the floating gate charge amount of the single-layer memory cell buffer data block and high data storage stability are utilized as the data block for writing data, and after the single-layer memory cell buffer data block is written into a certain amount of data, the data of the preset data amount is transferred to the three-layer memory cell storage data block for storage. The data writing device of the 3D TLC flash memory solves the problem that the data stability is reduced because the floating gate charge quantity in the 3D TLC flash memory is easily affected under the abnormal conditions such as power failure, improves the data stability under the abnormal conditions such as power failure, and simultaneously ensures the stability of data transferred from a single-layer storage unit buffer data block to a three-layer storage unit storage data block.
Optionally, the data transfer module is further configured to, when selecting a three-layer memory cell storage data block and moving the data of the preset data amount to the three-layer memory cell storage data block, reselect a three-layer memory cell storage data block and move the data of the preset data amount to the three-layer memory cell storage data block if the 3D TLC flash memory has a power failure phenomenon.
Further, the data transfer module is used for selecting a three-layer storage unit storage data block when the data written into the single-layer storage unit buffer data block is data of a preset group, and moving the data of the preset group to the three-layer storage unit storage data block;
and when the sum of the data in the buffer data block of the single-layer storage unit which is written later and the data of the last group which is written earlier is the data of the preset group, selecting a three-layer storage unit storage data block, and moving the data which is written later to the three-layer storage unit storage data block.
In addition, the data writing device according to the third embodiment of the present invention may further include a logic mapping table storage module, and fig. 5 is a schematic structural diagram of another data writing device for a 3D TLC flash memory according to the third embodiment of the present invention, and referring to fig. 5, in the data writing device, the logic mapping table storage module 14 is configured to update the logic mapping table of the data except for the last group in the preset group of the three-layer storage unit storage data block after moving the data of the preset group to the three-layer storage unit storage data block, and after moving the data of the subsequent writing to the three-layer storage unit storage data block.
The data writing device provided by the embodiment of the invention can execute the data writing method provided by any embodiment of the invention, and has the corresponding functional modules and beneficial effects of executing the data writing method.
Example IV
The fourth embodiment of the invention provides a 3D TLC flash memory, which includes the data writing device of any one of the embodiments of the invention.
The 3D TLC flash memory comprises any data writing device, so that the 3D TLC flash memory has corresponding functions and beneficial effects.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, and that various obvious changes, rearrangements, combinations, and substitutions can be made by those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (8)
1. A data writing method of a 3D TLC flash memory, wherein the 3D TLC flash memory includes a single-layer memory cell buffer data block and a three-layer memory cell storage data block, the data writing method comprising:
receiving a data writing command;
writing corresponding data into the buffer data block of the single-layer storage unit in a single-layer storage mode according to the data writing command;
when the data quantity written into the buffer data blocks of the single-layer storage unit is a preset data quantity, selecting one storage data block of the three-layer storage unit, and moving the data of the preset data quantity to the storage data block of the three-layer storage unit;
the data of the preset data volume comprises data of a preset group, when the data volume written into the buffer data block of the single-layer storage unit is the preset data volume, selecting one storage data block of the three-layer storage unit, and moving the data of the preset data volume to the storage data block of the three-layer storage unit, wherein the method comprises the following steps:
when the data written into the single-layer storage unit buffer data block is the data of the preset group, selecting one three-layer storage unit storage data block, and moving the data of the preset group to the three-layer storage unit storage data block;
and when the sum of the data in the buffer data block of the single-layer memory unit and the last group of data written previously is the data of the preset group, selecting one three-layer memory unit to store the data block, and moving the data written subsequently to the three-layer memory unit to store the data block.
2. The method of claim 1, wherein when the selecting one of the three-layer memory cells stores a data block and moving the data of the predetermined data amount to the three-layer memory cell stores a data block, if the 3D TLC flash memory has a power-down phenomenon, then reselecting one of the three-layer memory cells stores a data block and moving the data of the predetermined data amount to the three-layer memory cell stores a data block.
3. The data writing method according to claim 1, wherein after said moving the data of the preset group to the three-tier memory cell storage data block, and after said moving the data of the subsequent write to the three-tier memory cell storage data block, further comprising:
and updating a logical-to-physical mapping table of the data except the last group in the preset group of the reciprocal of the storage data block of the three-layer storage unit.
4. The method of claim 3, wherein when updating the logical-to-physical mapping table of the data except the last group in the three-layer memory cell storage data block reciprocal preset group, if the 3D TLC flash memory has a power failure, the logical-to-physical mapping table of the data except the last group in the three-layer memory cell storage data block reciprocal preset group is updated again.
5. A data writing device of a 3D TLC flash memory, comprising:
the data receiving module is used for receiving a data writing command;
the data writing module is used for writing corresponding data into the buffer data block of the single-layer storage unit in a single-layer storage mode according to the data writing command;
the data transfer module is used for selecting a three-layer storage unit storage data block when the data amount written into the single-layer storage unit buffer data block is a preset data amount, and moving the data of the preset data amount to the three-layer storage unit storage data block;
the data transfer module is used for selecting one of the three-layer storage unit storage data blocks when the data written into the single-layer storage unit buffer data block is data of a preset group, and moving the data of the preset group to the three-layer storage unit storage data block;
and when the sum of the data in the buffer data block of the single-layer storage unit and the last group of data written in the previous storage unit is the data of the preset group, selecting one storage data block of the three-layer storage unit, and moving the data written in the next storage data block to the storage data block of the three-layer storage unit.
6. The data writing device according to claim 5, wherein the data transfer module is further configured to, when the selecting one of the three-layer memory cells stores a data block and moving the data of the preset data amount to the three-layer memory cell stores a data block, reselect one of the three-layer memory cells stores a data block and move the data of the preset data amount to the three-layer memory cell stores a data block if the 3D TLC flash memory has a power failure.
7. The data writing device of claim 6, further comprising a logic mapping table storage module for updating a logic-to-physical mapping table of data except for a last group in the last preset group of the three-layer memory cells after the moving of the preset group of data to the three-layer memory cells for storing data blocks and after the moving of the subsequently written data to the three-layer memory cells for storing data blocks.
8. A 3D TLC flash memory comprising a data writing device as claimed in any one of claims 5-7.
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| CN101384984A (en) * | 2006-01-18 | 2009-03-11 | 特科2000国际有限公司 | Portable data storage device incorporating multiple flash memory units |
| CN101814318A (en) * | 2009-02-25 | 2010-08-25 | 群联电子股份有限公司 | Multi level cell NAND flash storage system as well as controller and access method thereof |
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