CN111933196A - Laminate based on giant magneto-impedance effect and application thereof - Google Patents
Laminate based on giant magneto-impedance effect and application thereof Download PDFInfo
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- CN111933196A CN111933196A CN201910392978.XA CN201910392978A CN111933196A CN 111933196 A CN111933196 A CN 111933196A CN 201910392978 A CN201910392978 A CN 201910392978A CN 111933196 A CN111933196 A CN 111933196A
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
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Abstract
A laminate based on giant magneto-impedance effect and application thereof, wherein the laminate comprises three structures: the upper surface and the lower surface of the two soft magnetic film layers are the magnetostrictive material layers, and a coil wound by the conducting wire is arranged outside the magnetostrictive material layers; the upper and lower surfaces of the two soft magnetic film layers are provided with the magnetostrictive material layers, and the coil wound by the conducting wire is arranged outside the magnetostrictive material layers. A planar coil is arranged between the two soft magnetic film layers; the upper and lower surfaces of the two soft magnetic film layers are provided with the magnetostrictive material layers, the upper and lower surfaces of the magnetostrictive material layers are provided with permanent magnet layers, and the permanent magnet layers are provided with coils wound by the conducting wires. The invention can realize nonvolatile memory and multi-state storage, thereby obviously improving the storage density; the basic logic operation unit can also be realized by an appropriate combination of a plurality of laminates.
Description
Technical Field
The invention relates to a computer, in particular to a lamination based on a giant magneto-impedance effect and application thereof, which can still realize nonvolatile information storage and operation functions after an external power supply is turned off.
Background
With the rapid development of cloud computing, deep learning and internet technology, the worldwide digital information production amount reaches 44ZB every year, so that massive digital data needs to be stored, which also promotes the continuous development of various storage devices and related technologies.
On one hand, the conventional capacitor-based dynamic random access memory of the computer needs to refresh devices at intervals, so that the nonvolatile storage after power failure cannot be realized, on the other hand, the storage and the operation unit of the conventional computer are physically isolated, and a large amount of data needs to be transmitted between the storage unit and the operation unit during operation, so that the operation efficiency is reduced and the power consumption is increased. In order to solve this challenge and realize a general-purpose nonvolatile memory device, researchers have proposed a phase change memory based on a metal layer/insulating layer/metal layer, a magnetoresistive memory based on a magnetic layer/oxide layer/magnetic layer, a ferroelectric memory based on a ferroelectric material, and the like. In which multi-state storage is difficult to achieve, which presents challenges to further increase the storage density. In the signal reading process of the ferroelectric memory, the ferroelectric material is applied with an electric field to cause a certain degree of change to the stored information, and the problem of low density exists at the same time. The magnetoresistive memory mainly utilizes the fact that when the magnetization directions of adjacent magnetic layers are the same and opposite, the tunneling effect strength caused by current passing through an oxide layer is different, so that the resistance of a magnetic laminate is changed, but the magnetoresistive memory has the problems of low thermal stability and density.
Since Mohri et al, K.Mohri, a university of ancient Japan, 1992, discovered that the impedance of a CoFeSiB amorphous wire changes sharply with the increase of an external direct-current magnetic field, a magnetic sensor based on a giant magneto-impedance effect is widely applied to the sensor by virtue of the advantages of weak hysteresis, high sensitivity, low manufacturing cost and the like, but a single-layer soft magnetic material cannot be used for realizing a nonvolatile storage and operation device due to the weak hysteresis and the small remanence of the soft magnetic material, so that few reports are made on the storage and operation device of the giant magneto-impedance effect at present.
Disclosure of Invention
The invention provides a lamination based on giant magneto-impedance effect and application thereof, aiming at the problems in the background art, wherein the giant magneto-impedance lamination has the characteristic of non-volatility and can form a non-volatile storage and operation device.
The technical solution of the invention is as follows:
one of giant magneto-impedance based laminates is characterized by comprising a soft magnetic thin film layer and a magnetostrictive material layer with obvious coercive force, wherein the magnetostrictive material layer is arranged on the upper surface and the lower surface of the two soft magnetic thin film layers, and a coil wound by a lead is arranged outside the magnetostrictive material layer.
The second giant magneto-impedance laminate is characterized in that the magnetostrictive material layers are arranged on the upper surface and the lower surface of the two soft magnetic thin film layers, and the coil wound by the lead is arranged outside the magnetostrictive material layers. And a planar coil is arranged between the two soft magnetic film layers.
The third giant magneto-impedance laminate is characterized in that the magnetostrictive material layers are arranged on the upper surface and the lower surface of the two soft magnetic film layers, the permanent magnet layers are arranged on the upper surface and the lower surface of the magnetostrictive material layers, and the coil wound by the conducting wire is arranged outside the permanent magnet layers.
The application of one of the giant magneto-impedance laminates is characterized in that the application is a memory, and leads at two ends of the coil are connected with two ends of a current source.
The second application of the giant magneto-impedance laminate is characterized in that the second application is a memory, the leads at two ends of the coil are connected with two ends of a direct current source, and two ends of the planar coil are connected with two ends of an alternating current source.
The third application of the giant magneto-impedance laminate is characterized in that the third application is a memory, and leads at two ends of the coil are connected with a current source.
The giant magneto-impedance laminate Is characterized in that the giant magneto-impedance laminate Is a logic gate, one giant magneto-impedance laminate and the other giant magneto-impedance laminate are connected in series to form a branch, a standard resistor forms the other branch, a comparator Is arranged at the output ends of the two branches, the input ends of the two branches are connected with an alternating current source, the input current Is, coils wound outside the two giant magneto-impedance laminates are respectively connected with a direct current power supply, and the direct current power supply Is the logic gateAn input terminal to which a positive current representing an input state '1' or a negative current representing a state '0' is input to the coil; the comparator is the output end of the logic gate and compares the voltage difference U between the two branchesdiffThereafter, a corresponding binary signal '1' or '0' is output.
In addition, the voltage polarity between the two branches can be adjusted by selecting the size of the standard resistor, so that the functions of a NAND gate or a NOR gate are realized respectively.
The beneficial technical effects of the invention are as follows:
according to the laminated material with the giant magneto-impedance characteristic, the laminated material can realize a nonvolatile memory and can realize multi-state storage, so that the storage density is obviously improved; the basic logic operation unit can also be realized by an appropriate combination of a plurality of laminates.
Drawings
Fig. 1 is a schematic structural diagram of a laminate embodiment 1 based on giant magneto-impedance effect according to the present invention.
Fig. 2 is a schematic structural diagram of a laminate embodiment 2 based on giant magneto-impedance effect according to the present invention.
Fig. 3 is a schematic structural diagram of a laminate embodiment 3 based on giant magneto-impedance effect according to the present invention.
FIG. 4 is a schematic structural diagram of an embodiment 1 of a memory according to the present invention based on the application of giant magneto-impedance laminates.
FIG. 5 is a schematic structural diagram of an embodiment 2 of a memory according to the present invention based on the application of giant magneto-impedance laminates.
FIG. 6 is a schematic structural diagram of an embodiment 3 of a memory according to the present invention based on the application of giant magneto-impedance laminates.
FIG. 7 is a schematic diagram of a basic structure of a logic gate based on the application of the giant magneto-impedance laminate of the present invention.
In the figure: 1-a soft magnetic thin film; 2-magnetostrictive layer with hysteresis; 3-a wire; 4-a planar coil; 5-permanent magnet layer; 6-ac/dc power supply; 7-a direct current power supply; 8-alternating current power supply; 9-laminate based on giant magneto-impedance effect 1; 10-laminate 2 based on giant magneto-impedance effect; 11-standard resistance; 12-a comparator; 31-coil.
Detailed Description
The present invention will be further described with reference to the following examples and drawings, but the scope of the present invention should not be limited thereto.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a giant magneto-impedance effect based laminate of an embodiment 1 of the present invention. As can be seen from the figure, the laminated material based on giant magneto-impedance effect of the present invention has a structure 1, which comprises a soft magnetic thin film 1, a magnetostrictive material 2 with an obvious coercive force, and a conducting wire 3, wherein the magnetostrictive material layers 2 are arranged on the upper and lower surfaces of the two soft magnetic thin films 1, and a coil 31 wound by the conducting wire 3 is arranged outside the magnetostrictive material layers 2.
Referring to fig. 2, fig. 2 is a schematic view of the structure of the laminate embodiment 2 based on the giant magneto-impedance effect of the present invention. This structure 2 differs from structure 1: and a planar coil 4 is arranged between the two soft magnetic films 1.
Referring to fig. 3, fig. 3 is a schematic structural view of a laminate based on giant magneto-impedance effect according to embodiment 3 of the present invention. This structure 3 differs from structure 1 in that: a permanent magnet layer 5 is arranged between the magnetostrictive material layer 2 and the coil 3.
Referring to fig. 4, 5 and 6, fig. 4 is a schematic structural view of an embodiment 1 of a memory according to an application of the present invention based on a giant magneto-impedance laminate. FIG. 5 is a schematic structural diagram of an embodiment 2 of a memory according to the present invention based on the application of giant magneto-impedance laminates. FIG. 6 is a schematic structural diagram of an embodiment 3 of a memory according to the present invention based on the application of giant magneto-impedance laminates.
For the application of giant magneto-impedance as a nonvolatile memory, for the structure 1 and the structure 3, two ends of the wire 3 are connected with an alternating current/direct current source 6, the current source is a direct current source in the writing process, and the current source is an alternating current source in the reading process. Aiming at the structure 2, two ends of the planar coil 4 are connected with two ends of an alternating current source 8, and two ends of the lead 3 are connected with two ends of a direct current source 7. The coil 31 wound by the conducting wire 3 is used for information writing process, and the planar coil 4 is used for signal acquisition of reading process.
Referring to FIG. 7, FIG. 7 is a diagram of the giant magnetoresistance-based magnetic memory device of the present inventionThe application of the anti-lamination body is a schematic diagram of a basic structure of a logic gate. It can be seen from the figure that the application of the giant magneto-impedance laminate of the invention Is a logic gate, the giant magneto-impedance laminate 9 and the giant magneto-impedance laminate 10 are connected in series to form a branch, the standard resistor 11 forms another branch, the output ends of the two branches are provided with a comparator 12, the input ends of the two branches are connected with an alternating current source, the input current Is, the giant magneto-impedance laminate 9 and the coil 31 wound outside the giant magneto-impedance laminate 10 are respectively connected with a direct current source 7, the direct current source 7 Is the input end of the logic gate, and the coil 31 Is input with a positive current representing the input state '1' or a negative current representing the state '0'; the comparator 12 is an output terminal of the logic gate, and the comparator 12 compares the voltage difference U between the two branchesdiffThereafter, a corresponding binary signal '1' or '0' is output.
The working process of the logic gate is as follows:
a giant magneto-impedance laminate 9 (the whole giant magneto-impedance laminate is referred to as 9, and the structures 1,2 and 3 can all be used) and another giant magneto-impedance laminate 10 (the whole giant magneto-impedance laminate is referred to as 10, and the structures 1,2 and 3 can all be used) are connected in series, and currents in positive or negative directions (positive currents represent input '1' and negative currents represent '0') are respectively led to coils wound outside the laminate 9 and the laminate 10 through a direct current power supply 7 at the input end of a logic gate, so that a positive direct current magnetic field or a negative direct current magnetic field is generated to change the corresponding impedance of the laminates. After the input of the logic gate Is finished, at the output end of the logic gate, the current Is respectively passes through one branch of the giant magneto-impedance laminates 9 and 10 and the other branch consisting of the standard resistor through an alternating current source, then the two branches are input into the comparator 12 after being processed by the full-wave rectifying circuit, and when the voltage difference U between the two branches Isdiff＝Is(Z9+Z10-Z11) When the polarity is positive or negative, the comparator outputs a binary signal '1' or '0', respectively. For example, when the current is applied to the coil 31 wound outside the giant magnetic laminates 9 and 10 in the forward direction, the impedance (Z) between the two is high9,Z10) Both are low impedance, in which case the voltage of the branch of the series connection of the laminates 9 and 10 is lower than the standard resistanceLine voltage, the voltage difference U between the two branches at this timediffThe polarity is negative and the comparator 12 outputs a binary signal '0'. When the current flowing through the coil 31 wound outside the giant magnetic laminates 9 and 10 is negative, the impedance (Z) of the two is negative9,Z10) Both are high impedance, when the branch voltage of the series connection of the laminates 9 and 10 is higher than that of the standard resistor, when the voltage difference U between the two branchesdiffWith the polarity positive, the comparator 12 outputs a binary symbol '1'.
The impedance of the two laminates and the resulting binary signal ('1' or '0') output by the comparator 12 can thus be manipulated by controlling the input current direction of the laminate outer winding coil 31 (the '1' and '0' states with the positive and negative directions as input terminals of the logic gate), respectively, to achieve the logic gate function.
In addition, the voltage polarity between the two branches can be adjusted by selecting the size of the standard resistor, so that the functions of a NAND gate or a NOR gate are realized respectively.
Experiments show that the laminate with the giant magneto-impedance characteristic can realize nonvolatile storage, realize multi-state storage and remarkably improve the storage density; the basic logic operation unit can also be realized by an appropriate combination of a plurality of laminates.
Claims (7)
1. A giant magneto-impedance laminate is characterized by comprising a soft magnetic thin film layer (1) and a magnetostrictive material layer (2) with obvious coercive force, wherein the magnetostrictive material layer (2) is arranged on the upper surface and the lower surface of the two soft magnetic thin film layers (1), and a coil (31) wound by a lead (3) is arranged outside the magnetostrictive material layer (2).
2. Giant magneto-impedance laminate according to claim 1, characterized in that a planar coil (4) is provided between the two soft magnetic thin films (1).
3. Giant magneto-impedance laminate according to claim 1, wherein a layer of permanent magnet (5) is provided between the layer of magnetostrictive material (2) and the coil (31).
4. Use of a giant magneto-impedance laminate according to claim 1, characterized in that the use is a memory, the wires (3) at both ends of the coil (31) being connected to both ends of a current source (6).
5. Use of a giant magneto-impedance laminate according to claim 2, characterized in that the use is a memory, the wires (3) at both ends of the coil (31) are connected to both ends of a direct current source (7), and the two ends of the planar coil (4) are connected to both ends of an alternating current source (8).
6. Use of a giant magneto-impedance laminate according to claim 3, characterized in that the use is a memory, the wires (3) at both ends of the coil (31) being connected to a current source (6).
7. The use of giant magneto-impedance laminate according to any of claims 1 to 3, characterized in that the use Is a logic gate, the giant magneto-impedance laminate (9) and the giant magneto-impedance laminate (10) are connected in series to form a branch, the standard resistor (11) forms another branch, a comparator (12) Is arranged at the output ends of the two branches, the input ends of the two branches are connected to an ac source, the input current Is, the giant magneto-impedance laminate (9) and the giant magneto-impedance laminate (10) are respectively connected to a dc power supply (7), the dc power supply (7) Is the input end of the logic gate, and the coil (31) Is input with a positive current representing the input state '1' or a negative current representing the state '0'; the comparator (12) is the output end of the logic gate, and the comparator (12) compares the voltage difference U between the two branchesdiffThereafter, a corresponding binary signal '1' or '0' is output.
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| CN201910392978.XA CN111933196B (en) | 2019-05-13 | 2019-05-13 | Laminate based on giant magneto-impedance effect and application thereof |
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| CN201910392978.XA CN111933196B (en) | 2019-05-13 | 2019-05-13 | Laminate based on giant magneto-impedance effect and application thereof |
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| CN111933196B CN111933196B (en) | 2022-06-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210398918A1 (en) * | 2020-06-19 | 2021-12-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Chip or system-in-package protection using the gmi effect |
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| US4236230A (en) * | 1977-12-19 | 1980-11-25 | International Business Machines Corporation | Bistable magnetostrictive device |
| US20020180432A1 (en) * | 2001-03-23 | 2002-12-05 | Integrated Magnetoelectronics Corporation, A California Corporation | Transpinnor-based switch and applications |
| US20030169542A1 (en) * | 2002-03-07 | 2003-09-11 | Hardayal Singh Gill | Tunnel junction sensor with a multilayer free-layer structure |
| US20030231077A1 (en) * | 2002-04-11 | 2003-12-18 | Integrated Magnetoelectronics Corporation | Transpinnor-based transmission line transceivers and applications |
| US20050057992A1 (en) * | 2003-09-12 | 2005-03-17 | Sony Corporation | Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof |
| CN1694275A (en) * | 2005-06-09 | 2005-11-09 | 上海交通大学 | Magnetosensitive device based on soft magnetic multilayer film giant magnetic impedance effect |
| CN108226825A (en) * | 2018-01-08 | 2018-06-29 | 上海交通大学 | A kind of soft magnetic film planar coil compound magnetic sensor and preparation method thereof |
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2019
- 2019-05-13 CN CN201910392978.XA patent/CN111933196B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4236230A (en) * | 1977-12-19 | 1980-11-25 | International Business Machines Corporation | Bistable magnetostrictive device |
| US20020180432A1 (en) * | 2001-03-23 | 2002-12-05 | Integrated Magnetoelectronics Corporation, A California Corporation | Transpinnor-based switch and applications |
| US20030169542A1 (en) * | 2002-03-07 | 2003-09-11 | Hardayal Singh Gill | Tunnel junction sensor with a multilayer free-layer structure |
| US20030231077A1 (en) * | 2002-04-11 | 2003-12-18 | Integrated Magnetoelectronics Corporation | Transpinnor-based transmission line transceivers and applications |
| US20050057992A1 (en) * | 2003-09-12 | 2005-03-17 | Sony Corporation | Magnetoresistance effect element, method of manufacture thereof, magnetic storage and method of manufacture thereof |
| CN1694275A (en) * | 2005-06-09 | 2005-11-09 | 上海交通大学 | Magnetosensitive device based on soft magnetic multilayer film giant magnetic impedance effect |
| CN108226825A (en) * | 2018-01-08 | 2018-06-29 | 上海交通大学 | A kind of soft magnetic film planar coil compound magnetic sensor and preparation method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210398918A1 (en) * | 2020-06-19 | 2021-12-23 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Chip or system-in-package protection using the gmi effect |
| US11978708B2 (en) * | 2020-06-19 | 2024-05-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Chip or system-in-package protection using the GMI effect |
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