CN111916504A - 一种超薄柔性硅太阳电池 - Google Patents

一种超薄柔性硅太阳电池 Download PDF

Info

Publication number
CN111916504A
CN111916504A CN201910557479.1A CN201910557479A CN111916504A CN 111916504 A CN111916504 A CN 111916504A CN 201910557479 A CN201910557479 A CN 201910557479A CN 111916504 A CN111916504 A CN 111916504A
Authority
CN
China
Prior art keywords
layer
semi
solar cell
silicon solar
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201910557479.1A
Other languages
English (en)
Inventor
郁操
徐希翔
李沅民
徐晓华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Deyun Chuangxin (Beijing) Technology Co.,Ltd.
Original Assignee
Beijing Juntai Innovation Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Juntai Innovation Technology Co Ltd filed Critical Beijing Juntai Innovation Technology Co Ltd
Publication of CN111916504A publication Critical patent/CN111916504A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本申请涉及一种超薄柔性硅太阳电池，包括依次层叠的透明导电层、n型掺杂层、第一本征钝化层、单晶硅片、第二本征钝化层、p型掺杂层以及半透半反功能层，其中，所述半透半反功能层包括至少一层TCO材料层和至少一层金属层。本发明提供的超薄柔性硅太阳电池，通过设置半透半反功能层，其短波透过率大于80％且长波反射率大于60％，将到达硅片背表面的长波段光进行再次反射利用，提升电池的短路电流密度。半透半反功能层包含金属层，提升了光生空穴在背电极的横向收集能力，降低了电阻损失，提升了电池的FF，并最终获得了电池效率～23.4％的柔性超薄硅电池该电池的重量为5.38g，折算到每瓦电池的克重为0.95g/W。

Description

一种超薄柔性硅太阳电池
本申请要求于2019年5月7日提交中国国家知识产权局、申请号为201910377312.7、发明名称为“一种超薄柔性硅太阳电池”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本申请涉及光伏技术领域，尤其涉及一种超薄柔性硅太阳电池。
背景技术
目前量产的高效硅太阳电池绝大多数采用的是厚度为150-200μm的单、多晶硅片，做成晶硅电池的转换效率为19-21％，如普通p型晶硅技术、p型PERC(Passivated Emitterand Rear Cell，钝化发射极背表面电池)技术和n型PERT(Passivated Emitter，RearTotally-diffused cell，钝化发射极背表面全扩散电池)技术等。这类电池目前是光伏市场的主流产品，占据整个应用市场的85％以上。
但是，现有量产的高效硅太阳电池的单片重量约为8-11g，即折算到每瓦电池的克重为1.56-2.37g/W，无法进入航空航天、平流层飞艇、无人机、空间站等轻质太阳能应用领域。而且该种电池一般为脆性产品，弯曲弧度较小，也无法应用在柔性太阳能领域。
现有柔性太阳能电池技术主要有柔性衬底(不锈钢或者铝箔)的铜铟镓硒(CIGS)薄膜组件、碲化镉(CdTe)薄膜组件和砷化镓(GaAs)薄膜组件，其中CIGS和CdTe组件转换效率偏低，一般量产效率在13-18％；GaAs薄膜组件虽然效率较高，可超过30％，但其生产成本昂贵，无法大规模产业化。
发明内容
为了解决上述技术问题，本发明提供了一种可量产的超薄柔性高效硅太阳电池，其光电转换效率＞23％。
本申请实施例提供的具体技术方案如下：
一种超薄柔性硅太阳电池，包括依次层叠的透明导电层、n型掺杂层、第一本征钝化层、单晶硅片、第二本征钝化层、p型掺杂层以及半透半反功能层，其中，所述半透半反功能层包括至少一层TCO材料层和至少一层金属层。
本发明提供的超薄柔性硅太阳电池，通过设置半透半反功能层，其短波(<700nm)透过率大于80％且长波(>900nm)反射率大于60％，从而将到达硅片背表面的长波段光进行再次反射利用，提升电池的短路电流密度。半透半反功能层包含金属层，提升了光生空穴在背电极的横向收集能力，降低了电阻损失，提升了电池的FF，并最终获得了电池效率～23.4％的柔性超薄硅电池该电池的重量为5.38g，折算到每瓦电池的克重为0.95g/W。
本发明的其它特征和优点将在随后的说明书中阐述，并且，部分地从说明书中变得显而易见，或者通过实施本发明而了解。本发明的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解，并且构成说明书的一部分，与本申请的实施例一起用于解释本发明的技术方案，并不构成对本发明技术方案的限制。
图1为本发明一个实施例的超薄柔性硅太阳能电池的结构示意图。
图2为本发明一个实施例的超薄柔性硅太阳能电池与其他结构的硅太阳能电池的反射率对比曲线。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本申请提供一种超薄柔性高效硅电池。图1为该种超薄柔性高效硅电池的结构示意图，如图1所示，超薄柔性硅太阳电池包括依次层叠的透明导电层5、n型掺杂层3、第一本征钝化层2、单晶硅片1、第二本征钝化层8、p型掺杂层4和半透半反功能层6。
所述单晶硅片1为n型单晶硅片，厚度<130μm，电阻率0.1-10Ω·cm。本申请的一个实施例中，所述单晶硅片的厚度为60-90nm。
所述第一本征钝化层2为非晶硅基本征钝化层，可以是a-Si:H(i)、a-SiOx:H(i)和a-SiC:H(i)薄膜的单层或者多层结构，厚度<10nm。
所述n型掺杂层3为n型非晶硅或者微晶硅基薄膜，厚度<30nm，可以是a-Si:H(n)或者μc-SiOx:H(n)等。
所述p型掺杂层4为p型非晶硅或者微晶硅基薄膜发射极，厚度<30nm，可以是a-Si:H(p)或者μc-Si:H(p)等。
所述透明导电层5为透明导电氧化物层，可以是ITO、IWO、ICO等单层或者多层结构。
所述半透半反功能层6的主要作用是透过短波段的光、反射长波段的光，既不影响电池吸收组件背面的杂散光，又可以再次反射和利用透射到电池背面的长波段光，提升电池的短路电流密度。具体地，所述半透半反功能层6包括至少一层TCO材料层和至少一层金属层。其中，金属层提升了背电极的横向导电性能，降低电阻损失，提升电池的填充因子(FF)。
图1示出的一种实施例中，所述TCO材料层为两层，分别为第一TCO材料层61，第二TCO材料层63；所述金属层也为两层，分别为第一金属层62和第二金属层64。所述TCO材料层和所述金属层的位置可以不做限制。当TCO材料层和金属层均为多层时，各个层的位置也可以不做限制。图1中所示的实施例中，所述TCO材料层和金属层交替设置，即按照第一TCO材料层，第一金属层，第二TCO材料层，第二金属层的顺序层叠设置。当然，图1仅是一种位置设置的示意，其还可以按照其他可能的方式设置，比如可以按照第一TCO材料层，第二TCO材料层，第一金属层，第二金属层的顺序层叠设置。
所述TCO材料为ITO或AZO。所述金属为Ag、Al或者Cu。当所述TCO材料层为多层时，各个层的材质可以相同也可以不同。当所述金属层为多层时，各个层的材质可以相同也可以不同。例如，图1所示的实施例中，所述第一TCO材料层61为ITO层，第二TCO材料层63为AZO层，第一金属层62为Ag层，第二金属层64为Ag。
当所述TCO材料层为多层时，各个层的厚度可以相同也可以不同。当所述金属层为多层时，各个层的厚度可以相同也可以不同。例如，图1所示的实施例中，所述第一TCO材料层61的厚度为60-80nm，优选为70nm，第二TCO材料层63的厚度为80-100nm，优选为90nm，第一金属层62的厚度为4-8nm，优选为6nm，第二金属层64的厚度为10-15nm，优选为12nm。
如图1所示，所述的超薄柔性硅太阳电池还包括分别设置在所述透明导电物层5和半透半反功能层6上的金属电极7。其中，所述金属电极为银电极或铜电极。
为了对本发明提供的超薄柔性硅太阳电池的性能进行说明，申请人对常规硅异质结太阳能电池、包含另一种组成的半透半反功能层的超薄柔性硅太阳电池A以及本发明图1所示的超薄柔性硅太阳电池B分别进行了各项性能测试，具体结果如下表1所示。
表1：
Figure BDA0002107271620000041
其中超薄柔性电池A中的半透半反功能层为普通的ITO材料，厚度为80nm；超薄柔性电池B中的半透半反功能层6为多层膜结构：第一TCO材料层61为厚度是70nm的ITO层，第一金属层62为厚度是6nm的Ag层，第二TCO材料层63为厚度是90nm AZO，第二金属层64为厚度是12nm的Ag层。
申请人还对上述电池A和B的半透半反功能层的反射率进行了对比测试，图2示出了该两种不同材料功能层的反射率对比曲线。通过优化不同膜层的折射率和厚度，我们可以得到短波(<700nm)透过率大于80％且长波(>900nm)反射率大于60％的功能层，从而将到达硅片背表面的长波段光进行再次反射利用，提升电池的短路电流密度。另外，第一金属层62和第二金属层64的加入，提升了光生空穴在背电极的横向收集能力，降低了电阻损失，提升了电池的FF，并最终获得了电池效率～23.4％的柔性超薄硅电池。该电池的重量为5.38g，折算到每瓦电池的克重为0.95g/W。
需要理解的是，本发明中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。
虽然本发明所揭露的实施方式如上，但所述的内容仅为便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式及细节上进行任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (10)

1.一种超薄柔性硅太阳电池，包括依次层叠的透明导电层、n型掺杂层、第一本征钝化层、单晶硅片、第二本征钝化层、p型掺杂层以及半透半反功能层，其中，所述半透半反功能层包括至少一层TCO材料层和至少一层金属层。
2.根据权利要求1所述的超薄柔性硅太阳电池，其中，所述TCO材料层为两层，所述金属层为两层。
3.根据权利要求2所述的超薄柔性硅太阳电池，其中，所述TCO材料层和所述金属层交替设置。
4.根据权利要求1或2所述的超薄柔性硅太阳电池，其中，所述TCO材料为ITO或AZO。
5.根据权利要求1或2所述的超薄柔性硅太阳电池，其中，所述金属为Ag、Al或者Cu。
6.根据权利要求1或2所述的超薄柔性硅太阳电池，其中，所述单晶硅片的厚度为60-80nm。
7.根据权利要求2所述的超薄柔性硅太阳电池，其中，所述两个TCO材料层的厚度分别为60-80nm和80-100nm。
8.根据权利要求2所述的超薄柔性硅太阳电池，其中，所述两个金属层的厚度分别为4-8nm和10-15nm。
9.根据权利要求1所述的超薄柔性硅太阳电池，其中，还包括分别设置在所述透明导电物层和半透半反功能层上的金属电极。
10.根据权利要求8所述的超薄柔性硅太阳电池，其中，所述金属电极为银电极或铜电极。
CN201910557479.1A 2019-05-07 2019-06-25 一种超薄柔性硅太阳电池 Pending CN111916504A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910377312 2019-05-07
CN2019103773127 2019-05-07

Publications (1)

Publication Number Publication Date
CN111916504A true CN111916504A (zh) 2020-11-10

Family

ID=73241817

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910557479.1A Pending CN111916504A (zh) 2019-05-07 2019-06-25 一种超薄柔性硅太阳电池

Country Status (1)

Country Link
CN (1) CN111916504A (zh)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110139232A1 (en) * 2010-02-10 2011-06-16 Suntae Hwang Silicon thin film solar cell
CN102201480A (zh) * 2011-05-13 2011-09-28 苏州阿特斯阳光电力科技有限公司 基于n型硅片的碲化镉半导体薄膜异质结太阳电池
CN103178148A (zh) * 2013-04-21 2013-06-26 常州合特光电有限公司 一种薄膜/异质结叠层太阳电池及其制造方法
CN203871345U (zh) * 2014-01-10 2014-10-08 常州天合光能有限公司 掺氢晶化硅钝化的异质结太阳能电池
CN104600157A (zh) * 2015-01-13 2015-05-06 福建铂阳精工设备有限公司 一种异质结太阳能电池的制造方法及异质结太阳能电池
CN106024917A (zh) * 2016-05-31 2016-10-12 英利能源（中国）有限公司 一种太阳能电池片及太阳能电池组件
CN109075218A (zh) * 2017-12-21 2018-12-21 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN208655672U (zh) * 2018-08-02 2019-03-26 君泰创新（北京）科技有限公司 异质结太阳能电池

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110139232A1 (en) * 2010-02-10 2011-06-16 Suntae Hwang Silicon thin film solar cell
CN102201480A (zh) * 2011-05-13 2011-09-28 苏州阿特斯阳光电力科技有限公司 基于n型硅片的碲化镉半导体薄膜异质结太阳电池
CN103178148A (zh) * 2013-04-21 2013-06-26 常州合特光电有限公司 一种薄膜/异质结叠层太阳电池及其制造方法
CN203871345U (zh) * 2014-01-10 2014-10-08 常州天合光能有限公司 掺氢晶化硅钝化的异质结太阳能电池
CN104600157A (zh) * 2015-01-13 2015-05-06 福建铂阳精工设备有限公司 一种异质结太阳能电池的制造方法及异质结太阳能电池
CN106024917A (zh) * 2016-05-31 2016-10-12 英利能源（中国）有限公司 一种太阳能电池片及太阳能电池组件
CN109075218A (zh) * 2017-12-21 2018-12-21 君泰创新（北京）科技有限公司 一种太阳能异质结电池及其制备方法
CN208655672U (zh) * 2018-08-02 2019-03-26 君泰创新（北京）科技有限公司 异质结太阳能电池

Similar Documents

Publication Publication Date Title
CN109004053B (zh) 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法
CN109509807B (zh) 晶硅异质结太阳能电池的发射极结构及其制备方法
CN111916523A (zh) 异质结太阳能电池及其组件、制备方法
EP2490260A2 (en) Color building-integrated photovoltaic (BIPV) panel
JPWO2009057692A1 (ja) 太陽電池
CN112382685A (zh) 一种双面超薄硅基异质结太阳电池柔性光伏组件及制备方法
CN113764535A (zh) 双面受光的机械叠层太阳能电池、电池组件和光伏系统
CN113224182A (zh) 一种异质结太阳电池及其制备方法
CN219628267U (zh) 一种太阳能叠层电池、电池组件和光伏系统
EP2341547A2 (en) Thin film solar cell and manufacturing method thereof
KR101411996B1 (ko) 고효율 태양전지
CN103178148A (zh) 一种薄膜/异质结叠层太阳电池及其制造方法
CN206460967U (zh) 一种碲化镉薄膜太阳能电池
AU2022328406A1 (en) Solar cell and manufacturing method thereof
CN101820004A (zh) 一种光电分离的太阳能电池背反射器
CN111916504A (zh) 一种超薄柔性硅太阳电池
KR101562191B1 (ko) 고효율 태양전지
CN112216747A (zh) 一种异质结太阳能电池及其制备方法与应用
CN111916515A (zh) 一种超薄柔性太阳电池组件
CN216488077U (zh) 一种异质结太阳电池
CN216084908U (zh) CdSe/N型硅叠层电池
KR20160041649A (ko) 태양 전지용 리본 및 이를 포함하는 태양 전지 모듈
CN215869412U (zh) 双面受光的机械叠层太阳能电池、电池组件和光伏系统
CN214336727U (zh) 一种异质结太阳能电池
US12027641B2 (en) Solar cell and photovoltaic module

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
TA01 Transfer of patent application right

Effective date of registration: 20210108

Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing

Applicant after: Deyun Chuangxin (Beijing) Technology Co.,Ltd.

Address before: 100176 10th floor, building 2, yard 9, Ronghua South Road, Yizhuang Economic and Technological Development Zone, Daxing District, Beijing

Applicant before: Juntai innovation (Beijing) Technology Co.,Ltd.

TA01 Transfer of patent application right
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination