CN111912881B - Thermoelectric nanosensor and method of making and using same - Google Patents
Thermoelectric nanosensor and method of making and using same Download PDFInfo
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- CN111912881B CN111912881B CN201910382360.5A CN201910382360A CN111912881B CN 111912881 B CN111912881 B CN 111912881B CN 201910382360 A CN201910382360 A CN 201910382360A CN 111912881 B CN111912881 B CN 111912881B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000002086 nanomaterial Substances 0.000 claims abstract description 133
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 96
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 96
- 239000004020 conductor Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 27
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- -1 polyethylene terephthalate Polymers 0.000 claims description 39
- 238000002955 isolation Methods 0.000 claims description 12
- 239000012491 analyte Substances 0.000 claims description 8
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
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- 238000005234 chemical deposition Methods 0.000 claims description 4
- 238000005289 physical deposition Methods 0.000 claims description 4
- 238000003786 synthesis reaction Methods 0.000 claims description 4
- 239000004698 Polyethylene Substances 0.000 claims description 3
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- 239000004743 Polypropylene Substances 0.000 claims description 3
- 239000004793 Polystyrene Substances 0.000 claims description 3
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 3
- 229920001197 polyacetylene Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 239000004417 polycarbonate Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920000128 polypyrrole Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
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- 238000012360 testing method Methods 0.000 claims description 2
- 238000001179 sorption measurement Methods 0.000 abstract description 2
- 229910052753 mercury Inorganic materials 0.000 description 30
- VCEXCCILEWFFBG-UHFFFAOYSA-N mercury telluride Chemical compound [Hg]=[Te] VCEXCCILEWFFBG-UHFFFAOYSA-N 0.000 description 20
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- BQPIGGFYSBELGY-UHFFFAOYSA-N mercury(2+) Chemical compound [Hg+2] BQPIGGFYSBELGY-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005476 size effect Effects 0.000 description 2
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
Abstract
The invention provides a thermoelectric nano sensor and a manufacturing method and an application method thereof. The manufacturing method of the thermoelectric nano sensor comprises the following steps: preparing a first conductive material; forming a plurality of tellurium nanostructures on the first conductive material; preparing a second conductive material; and forming a second conductive material over the tellurium nanostructures. When an object to be detected reacts with a tellurium nanostructure in the thermoelectric nanosensor to generate the telluride nanostructure, or when the resistance value of the thermoelectric nanosensor changes due to the adsorption of the object to be detected, the thermoelectric nanosensor changes in electric signal output caused by temperature change. Thus, the components and the concentration of the object to be detected can be detected.
Description
Technical Field
The invention relates to a sensor; more particularly, the present invention relates to a thermoelectric nanosensor and methods of making and using the same.
Background
With the increasing importance of modern people on health, issues related to preventing and treating environmental pollution have been remarkably mentioned. Therefore, environmental engineering for detecting harmful substances in the environment has been increasingly paid attention to. Various aqueous solutions are required for daily drinking by humans or animals, or for industrial manufacturing and machine operation, so prevention of water pollution is an important class in environmental engineering. Conventional techniques for measuring the concentration of harmful metal ions (e.g., mercury ions) in water are performed by using optical instruments such as cold vapor source absorption spectroscopy, flame atomic absorption spectroscopy, fluorescence spectroscopy, or inductively coupled plasma emission spectroscopy, which measure the intensity of the absorbed or emitted light of the mercury ions. However, the aforementioned optical measurement methods have many limitations. For example, the test sample is subjected to different pretreatment methods according to the type of the apparatus. In addition, such spectrometers are required to be equipped with optical components, thus making them bulky and not easy to carry. Furthermore, precision optics are not only costly, but also pose operational constraints for personnel.
The development of nanotechnology has brought a new opportunity to solve the above-mentioned problem of detecting environmental pollution. When the material is as small as nano-scale, the ratio of surface atoms to non-surface atoms is increased, and the surface effect is greatly developed. In addition, at the nanoscale, the phenomenon of electron energy level quantification, otherwise known as quantum size effect (Quantum size effect), of the material will be more pronounced. Thus, the nanomaterial has material properties that are quite different from conventional materials. Accordingly, it has become an important trend to develop a method or an apparatus for detecting the environment by utilizing the physical property change generated by the nanomaterial absorbing the energy of the substances in the environment.
Disclosure of Invention
The invention provides a thermoelectric nano sensor and a manufacturing method and an application method thereof. The tellurium nanostructure in the thermoelectric nano sensor can react with an object to be detected to generate a telluride nanostructure, or the resistance value of the thermoelectric nano sensor is changed due to the adsorption of the object to be detected. When a temperature change is applied, the thermoelectric nanosensor can generate different electrical signal outputs due to thermoelectric effect. Therefore, the composition and concentration of the object to be measured can be estimated by measuring the electric signal output.
In one embodiment of the present invention, a method for manufacturing a thermoelectric nanosensor is disclosed, comprising: preparing a first conductive material; forming a plurality of tellurium nanostructures on the first conductive material; preparing a second conductive material; and forming a second conductive material over the tellurium nanostructures; forming an isolation layer on the tellurium nanostructures; forming a patterned layer on the first conductive material; each tellurium nanostructure reacts with an object to be measured to form a tellurium nanostructure, or each tellurium nanostructure is adsorbed by the object to be measured to change a resistance value of the thermoelectric nano sensor, and the tellurium nanostructure is separated into a plurality of areas through the patterning layer, wherein the areas are used for measuring different objects to be measured simultaneously.
The method for manufacturing a thermoelectric nanosensor of the above embodiments may further include: an isolation layer is formed between the tellurium nanostructures and the second conductive material.
In the method for fabricating a thermoelectric nanosensor of the above embodiments, the plurality of tellurium nanostructures may be formed by a chemical synthesis method, a chemical deposition method, or a physical deposition method.
In another embodiment of the present invention, a thermoelectric nanosensor is disclosed that includes a first conductive material, a plurality of tellurium nanostructures, a patterned layer, an isolation layer, and a second conductive material. The tellurium nanostructures are located on the first conductive material. The patterning layer is positioned on the first conductive material, wherein the patterning layer divides the tellurium nanostructures into a plurality of areas, and the areas are used for simultaneously measuring different objects to be measured. The isolation layer is positioned on the plurality of tellurium nanostructures. The second conductive material is located on the plurality of tellurium nanostructures. Wherein each tellurium nanostructure reacts with an object to be tested to form a telluride nanostructure, or each tellurium nanostructure is used for the object to be tested to adsorb, so as to change a resistance value of the thermoelectric nano sensor.
In the thermoelectric nanosensor of the above embodiments, the material of the patterned layer may be polyethylene terephthalate, polyethylene, polypropylene, polyvinyl chloride, polyethylene terephthalate, polystyrene, or polycarbonate.
In the thermoelectric nanosensor of the above embodiment, the isolation layer may be made of polypyrrole, polyaniline, polythiophene, polyphenylene sulfide, polyacetylene, polyphenylacetylene or derivatives thereof.
In the thermoelectric nanosensor of the above embodiments, the tellurium nanostructures may be subjected to a temperature change to generate an electrical signal output.
In the thermoelectric nanosensor of the above embodiments, the telluride nanostructure can be subjected to a temperature change to generate an electrical signal output.
In the thermoelectric nanosensor of the above embodiments, the tellurium nanostructure is a zero-dimensional structure, a one-dimensional structure, or a two-dimensional structure.
In another embodiment of the present invention, a method for applying the thermoelectric nano-sensor is disclosed, which comprises: reacting the object to be detected with each tellurium nanostructure of the thermoelectric nanosensor to form a telluride nanostructure; applying a temperature change to each telluride nano structure to enable each telluride nano structure to generate an electric signal output; and measuring an electrical signal output through the first conductive material and the second conductive material of the thermoelectric nano-sensor.
The application method of the thermoelectric nanosensor of the above embodiment further includes: the composition or concentration of the analyte is estimated from the electrical signal output.
In the application method of the thermoelectric nano sensor in the above embodiment, the object to be measured may be a metal ion.
In still another embodiment of the present invention, a method for applying the thermoelectric nano-sensor is provided, which includes: enabling an object to be detected to be adsorbed on each tellurium nanostructure of the thermoelectric nano sensor, and enabling the resistance value of the thermoelectric nano sensor to be changed; applying a temperature change to the thermoelectric nano sensor to enable the thermoelectric nano sensor to generate an electric signal output; and measuring the electrical signal output through the first conductive material and the second conductive material of the thermoelectric nano-sensor.
Drawings
FIG. 1 is a flow chart illustrating a method of fabricating a thermoelectric nano-sensor according to an embodiment of the invention;
FIG. 2 is a flow chart illustrating a method of fabricating a thermoelectric nano-sensor according to another embodiment of the invention;
FIG. 3 is a schematic diagram showing a structure of a thermoelectric nano-sensor according to another embodiment of the invention;
FIG. 4A is a flow chart illustrating an application method of the thermoelectric nano-sensor according to the embodiment of FIG. 3;
FIG. 4B is a flow chart illustrating another application method of the thermoelectric nano-sensor according to the embodiment of FIG. 3;
FIG. 5 is a CROSS-SECTIONAL electron microscope image of the pyroelectric nanosensor of the embodiment of FIG. 3 prior to reaction with mercury ions;
FIG. 6 is a side-sectional electron microscope image of the pyroelectric nanosensor of the embodiment of FIG. 3 after reaction with mercury ions;
FIG. 7 is a graph showing an analysis of the composition of an X-ray spectrometer (EDX) before the pyroelectric nanosensor of the embodiment of FIG. 3 reacts with mercury ions;
FIG. 8 is a graph showing the composition analysis of the X-ray spectrometer after the thermoelectric nanosensor of the embodiment of FIG. 3 has reacted with mercury ions;
FIG. 9 is a high resolution electron microscope image of the embodiment of FIG. 3 before the pyroelectric nanosensor reacts with mercury ions;
FIG. 10 is a high-resolution electron microscope image of the pyroelectric nanosensor of FIG. 3 after reaction with mercury ions;
FIG. 11A is a graph showing the measurement signals of a surface potential microscope of tellurium nanostructures at room temperature;
FIG. 11B is a graph showing the measurement signals of a surface potential microscope of the mercury telluride nanostructure at normal temperature;
FIG. 11C is a graph showing the measurement signals of the surface potential microscope of the tellurium nanostructures after heating;
FIG. 11D is a graph showing the measurement signals of a surface potential microscope of the mercury telluride nanostructure after heating; and
FIG. 12 is a graph showing the comparison of electrical signal outputs of the thermoelectric nanosensor of the embodiment of FIG. 3 for measuring different metal ions.
[ symbolic description ]
100 thermoelectric nano sensor
110 first conductive material
120 tellurium nanostructures
121 mercuric telluride nanostructures
130 patterned layer
140 spacer layer
150 second conductive material
S101, S102, S103, S104 steps
S201, S202, S203, S204, S205, S206 steps
S301, S302, S303, S304 steps
S401, S402, S403, S404 steps
Detailed Description
In the following description, specific embodiments of the present invention will be described with reference to the accompanying drawings. Many practical details are set forth in the following description. However, these practical details should not be used to limit the invention. That is, in some embodiments of the invention, these practical details are not necessary. Moreover, for the sake of simplicity of the drawing, some well-known and conventional structures and elements are shown in the drawings in a simplified schematic manner; and repeated elements will likely be indicated by identical reference numerals.
Please refer to fig. 1. FIG. 1 is a flow chart illustrating a method for fabricating a thermoelectric nano-sensor according to an embodiment of the invention. The manufacturing method of the thermoelectric nano sensor disclosed by the invention comprises the steps of S101, S102, S103 and S104. Step S101 is to prepare a first conductive material. Step S102 is to form a plurality of tellurium nanostructures on the first conductive material. Step S103 is to prepare a second conductive material. Step S104 is to form a second conductive material on the tellurium nanostructures. The formation of the plurality of tellurium nanostructures on the first conductive material may be performed by a chemical synthesis method, a chemical deposition method, or a physical deposition method. The chemical or physical deposition method may be a chemical or physical vapor or liquid deposition method, and the like, but is not limited thereto.
FIG. 2 is a flow chart illustrating a method of fabricating a thermoelectric nano-sensor according to another embodiment of the invention. This example shows the formation of a plurality of tellurium nanostructures by chemical synthesis. In the embodiment of fig. 2, step S201, step S202, step S203, step S204, step S205, and step S206 are included. Step S201 is to prepare a first conductive material. Step S202 is to prepare a tellurium precursor. Step S203 prepares a reducing agent. In step S204, a tellurium precursor and a reducing agent are reacted on the first conductive material to form a plurality of tellurium nanostructures. Step S205 prepares a second conductive material. Step S206 is to form a second conductive material on the tellurium nanostructures.
In the step S202, the tellurium precursor material may be Te, teO, teO 2 、TeO 3 、Te 2 O 5 、H 2 TeO 3 、K 2 TeO 3 、Na 2 TeO 3 、H 2 TeO 4 、K 2 TeO 4 、Na 2 TeO 4 、H 2 Te, etc.
In the step S203, the reducing agent may be N 2 H 4 Or other materials that can reduce the reaction of the tellurium precursor.
The principle, structure, material and operation mechanism of the thermoelectric nano sensor manufactured by the manufacturing method will be described in the following paragraphs.
Please refer to fig. 3. Fig. 3 is a schematic diagram illustrating a structure of a thermoelectric nano-sensor 100 according to another embodiment of the invention. The thermoelectric nano-sensor 100 comprises a first conductive material 110, a plurality of tellurium nanostructures 120, a patterned layer 130, an isolation layer 140, and a second conductive material 150. A plurality of tellurium nanostructures 120 are located on the first conductive material 110. The patterned layer 130 is disposed on the first conductive material 110 and separates the tellurium nanostructures 120 into a plurality of regions, which can be used to measure different objects to be measured simultaneously. The material of the patterned layer 130 may be polyethylene, polypropylene, polyvinyl chloride, polyethylene terephthalate (PET), polystyrene or polycarbonate, but is not limited thereto. The isolation layer 140 is disposed on the tellurium nanostructures 120, and a second conductive material 150 is formed on the tellurium nanostructures 120. Meanwhile, the isolation layer 140 may be used to isolate the first conductive material 110 and the second conductive material 150 to avoid unnecessary electrical errors (e.g., short circuits) during measurement. The material of the isolation layer 140 may be polypyrrole, polyaniline, polythiophene, polyphenylene sulfide, polyacetylene, polyphenylacetylene or derivatives thereof, such as poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT: PSS), but not limited thereto. The first conductive material 110 may directly serve as a growth substrate for the plurality of tellurium nanostructures 120. And can be used as an electrode of the pyroelectric nanosensor 100. The material of the first conductive material 110 is selected from aluminum, but not limited thereto. The second conductive material 150 may be a metal, a conductive oxide, or a conductive polymer, and the material may include indium tin oxide, gold, silver, platinum, aluminum, nickel, copper, titanium, chromium, selenium, or an alloy thereof, but is not limited thereto. The second conductive material 150 is another electrode that can function as the pyroelectric nanosensor 100. Tellurium nanostructure 120 may be a zero-dimensional structure, a one-dimensional structure, or a two-dimensional structure. The zero-dimensional structure may be, for example, a nanoparticle; the one-dimensional structures may be, for example, nanowires, nanorods; the two-dimensional structure may be, for example, a nanofilm.
Please refer to fig. 4A and fig. 4B. Fig. 4A is a flow chart illustrating an application method of the thermoelectric nano-sensor 100 according to the embodiment of fig. 3. FIG. 4B illustrates another application of the thermoelectric nanosensor 100 of the embodiment of FIG. 3The flow chart of the method is shown in schematic diagram. One application method of the thermoelectric nanosensor 100 is shown in fig. 4A, comprising: step S301 is to react a to-be-detected object with each tellurium nanostructure 120 of the thermoelectric nano-sensor 100 to form a telluride nanostructure; step S302, applying a temperature change to the telluride nano structure to make the telluride nano structure generate an electric signal output; step S303 is to measure the electrical signal output through the first conductive material 110 and the second conductive material 150 of the thermoelectric nano-sensor 100; step S304 is to estimate a component or a concentration of the analyte from the electrical signal output. Another application method of the thermoelectric nanosensor 100 is shown in fig. 4B, comprising: step S401 is to make an object to be detected adsorb onto each tellurium nanostructure 120 of the thermoelectric nano-sensor 100, so as to change a resistance value of the thermoelectric nano-sensor 100; step S402 is to apply a temperature change to the thermoelectric nano-sensor 100 to make the thermoelectric nano-sensor 100 generate an electrical signal output; step S403 is to measure the electrical signal output through the first conductive material 110 and the second conductive material 150 of the thermoelectric nano-sensor 100; step S404 is to estimate a component or a concentration of the analyte from the electrical signal output. In the above embodiment, the tellurium nanostructure 120 itself has a thermoelectric effect, i.e. generates an electrical signal output (e.g. voltage) when subjected to a temperature change. The temperature change may be a temperature increase (heating) or a temperature decrease (cooling). And on a nano-scale basis, the thermoelectric effect is quite remarkable. When the tellurium nanostructure 120 reacts with the analyte containing a material to generate the tellurium nanostructure, the generated tellurium nanostructure also has a significant thermoelectric effect, which is even larger than that of the tellurium nanostructure 120 itself. Alternatively, the object to be measured is directly adsorbed on the tellurium nanostructure 120, so that the resistance of the thermoelectric nano sensor 100 is changed, and at this time, an electrical signal output can be generated due to the thermoelectric effect. Thus, in fig. 4A, the analyte reacts with the tellurium nanostructures 120 to produce telluride nanostructures; in fig. 4B, the analyte does not react with the tellurium nanostructure 120 to generate a new compound, but is directly adsorbed on the tellurium nanostructure 120. Not all materials may react with tellurium nanostructures 120 to formTelluride nanostructures and have a thermoelectric effect. Therefore, whether the object to be detected is made of a specific material or not can be detected through the electric signal output caused by the generated thermoelectric effect. Meanwhile, the value of the output voltage generated by the thermoelectric effect has a certain proportion relation with the concentration of the object to be detected, so that the concentration of the object to be detected can be estimated through the output voltage. The thermoelectric nanosensor 100 will subsequently detect mercury ions (Hg) in an environment 2+ ) For purposes of example. It should be noted that the mercury ion is only one material that can react with the tellurium nanostructure 120 to form a telluride nanostructure and generate a significant thermoelectric effect, but not limited thereto, and other materials may also react with the tellurium nanostructure 120 to form a telluride nanostructure and generate a significant thermoelectric effect. The thermoelectric nano sensor 100 of the present invention is a sensor that does not require external power supply, and can generate an output voltage by itself based on thermoelectric effect. In detection, an aqueous solution containing mercury ions is first dropped onto the pyroelectric nanosensor 100, and simultaneously the pyroelectric nanosensor 100 is placed in an environment of 60 ℃ for 30 minutes, so that the pyroelectric nanosensor 100 is sufficiently mixed with the aqueous solution. At this time, the mercury ions in the aqueous solution will react with the tellurium nanostructures 120 in the thermoelectric nanosensor 100 to form mercury telluride nanostructures, and generate a significant thermoelectric effect, which can generate an output voltage. The output voltage can be extracted from the two electrodes (the first conductive material 110 and the second conductive material 150) of the pyroelectric nano sensor 100. Various verification analyses of the above-described thermoelectric nanosensor 100 reacting with mercury ions in an aqueous solution will be described below.
Please refer to fig. 5 and 6. FIG. 5 is a CROSS-SECTIONAL electron microscope image of the pyroelectric nanosensor 100 of the embodiment of FIG. 3 before reaction with mercury ions; fig. 6 is a side-sectional electron microscope image of the pyroelectric nanosensor 100 of the embodiment of fig. 3 after reaction with mercury ions. From fig. 5, the formation of tellurium nanostructures 120 having a smooth surface morphology can be observed. From fig. 6, it has been observed that the surface morphology of the nanostructures is transformed from smooth to rough. Meanwhile, it can also be observed that the diameter of the nanostructure in fig. 6 is larger than that of the nanostructure in fig. 5, which is caused by the formation of the mercury telluride nanostructure 121.
Please refer to fig. 7 and 8. FIG. 7 is a graph showing an analysis of the composition of an X-ray spectrometer (EDX) before the thermoelectric nanosensor 100 of the embodiment of FIG. 3 reacts with mercury ions; fig. 8 is a graph showing an analysis of the composition of the X-ray spectrometer after the thermoelectric nanosensor 100 of fig. 3 reacts with mercury ions. In fig. 7, only the tellurium component was detected before the reaction. In fig. 8, in addition to the tellurium component, the mercury component can be detected after the reaction. This may illustrate that mercury ions do react with tellurium nanostructures 120 in thermoelectric nanosensor 100 to produce mercury telluride nanostructures 121.
Please refer to fig. 9 and 10. FIG. 9 is a high resolution electron microscope image of the embodiment of FIG. 3 before the thermoelectric nanosensor 100 reacts with mercury ions; fig. 10 is a high-resolution electron microscope image of the pyroelectric nanosensor 100 of fig. 3 after reaction with mercury ions. In fig. 9, since only tellurium nanostructures 120 were formed, tellurium nanostructures 120 were observed in the (001) and (010) lattice planes, respectively, and a interplanar spacing (interplanar spacing) of 0.59nm and 0.39nm was produced. In fig. 10, it can be observed that, as a result of defects or dislocations being generated in the crystal lattice during the generation of the mercury telluride nanostructure 121, the inter-plane distances thereof are changed, resulting in inter-plane distances of 0.22nm and 0.37nm in the lattice planes (220) and (111) of the mercury telluride nanostructure 121, respectively.
Please refer to fig. 11A, 11B, 11C and 11D. FIG. 11A is a graph showing the measurement signals of a surface potential microscope of the tellurium nanostructures 120 at room temperature; FIG. 11B is a graph showing the measurement signals of a surface potential microscope of the mercury telluride nanostructure 121 at room temperature; FIG. 11C is a graph showing the measurement signals of the surface potential microscope of the tellurium nanostructures 120 after heating; fig. 11D is a graph showing the measurement signals of the surface potential microscope of the mercury telluride nano structure 121 after heating. When unheated, no change in electrical signal output (peak reaction voltage at 0 mV) was observed, either for tellurium nanostructures 120 (fig. 11A) or for mercury telluride nanostructures 121 (fig. 11B). After heating, a temperature change is formed to generate a thermoelectric effect, and at this time, no matter the tellurium nanostructure 120 (fig. 11C) or the mercury telluride nanostructure 121 (fig. 11D), a significant change in the electrical signal output (peak of the reaction voltage is greater than 0 mV) is observed. Furthermore, from fig. 11C and 11D, it can be seen that the electrical signal output (peak reaction voltage of about 7.5 mV) generated by the mercury telluride nanostructure 121 is significantly greater than the electrical signal output (peak reaction voltage of about 2.5 mV) of the tellurium nanostructure 120. It can be illustrated that both the tellurium nanostructures 120 and the mercury telluride nanostructures 121 have significant thermoelectric effects, and that the thermoelectric effect of the mercury telluride nanostructures 121 is greater than that of the tellurium nanostructures 120. Therefore, the selectivity and the discrimination rate of mercury ion detection can be improved.
Please refer to fig. 12. Fig. 12 is a graph showing comparison of electrical signal outputs of different metal ions measured by the pyroelectric nanosensor 100 of fig. 3. The sample to be measured is taken from drinking water, lake water or river water, etc. existing in the environment. In measurement, the aqueous solutions are dropped onto the pyroelectric nanosensor 100, and the pyroelectric nanosensor 100 is placed in a heating environment to form a temperature change, and is left for a period of time to allow the pyroelectric effect to react completely. From fig. 12, it can be observed that the output voltage of mercury ions is significantly greater than that of other metal ions. This shows that mercury ions do react with the pyroelectric nanosensor 100 and that the presence of mercury ions can be effectively identified by the high selectivity of the pyroelectric nanosensor 100 based on the strong pyroelectric effect of the mercury telluride nanostructures 121. Further, if the relationship between the concentration of mercury ions and the change of the output voltage thereof with time is analyzed, the concentration of mercury ions can be further quantified.
The presence of the reacted mercury telluride nanostructures 121, as well as the thermoelectric effect, can be demonstrated by either image analysis, composition analysis or electrical analysis.
As described above, the tellurium nanostructure 120 is used as the main sensing unit of the thermoelectric nano sensor 100, and the object to be measured can be directly dripped on the thermoelectric nano sensor 100 for sensing without any pretreatment. When the sample contains mercury ions, the mercury ions combine with the tellurium nanostructures 120 to generate the mercury telluride nanostructures 121, and different concentrations of mercury ions form different amounts of mercury telluride nanostructures 121. Since the difference between the thermoelectric effect of the tellurium nanostructure 120 and that of the mercury telluride nanostructure 121 is quite large, when the thermoelectric nano sensor 100 heats or cools, the mercury telluride nanostructure 121 actively outputs a distinct electric signal, and the electric signal has a certain proportion to the concentration of mercury ions, so that the concentration of mercury ions in the object to be measured can be obtained by analyzing the electric signal, thereby achieving the quantitative purpose.
While the present invention has been described with reference to the embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention, and it is intended that the scope of the invention be limited only by the appended claims.
Claims (13)
1. A method for fabricating a thermoelectric nanosensor, comprising:
preparing a first conductive material;
forming a plurality of tellurium nanostructures on the first conductive material;
preparing a second conductive material;
forming the second conductive material over the plurality of tellurium nanostructures;
forming an isolation layer on the tellurium nanostructures; and
forming a patterned layer on the first conductive material;
each tellurium nanostructure reacts with an object to be measured to form a tellurium nanostructure, or each tellurium nanostructure is used for the object to be measured to absorb so as to change a resistance value of the thermoelectric nano sensor, and the plurality of tellurium nanostructures are separated into a plurality of areas through the patterning layer, and the plurality of areas are used for measuring different objects to be measured simultaneously.
2. The method of manufacturing a thermoelectric nanosensor of claim 1, further comprising:
the isolation layer is formed between the tellurium nanostructures and the second conductive material.
3. The method of claim 1, wherein forming the plurality of tellurium nanostructures is by a chemical synthesis method, a chemical deposition method, or a physical deposition method.
4. A thermoelectric nanosensor, comprising:
a first conductive material;
a plurality of tellurium nanostructures on the first conductive material;
a patterning layer on the first conductive material, wherein the patterning layer divides the tellurium nanostructures into a plurality of areas for simultaneously measuring different objects to be measured;
an isolation layer on the tellurium nanostructures; and
a second conductive material disposed on the plurality of tellurium nanostructures;
wherein each tellurium nanostructure reacts with an object to be tested to form a tellurium nanostructure, or each tellurium nanostructure is used for the object to be tested to adsorb, so as to change a resistance value of the thermoelectric nano sensor.
5. The sensor of claim 4, wherein the patterned layer is made of polyethylene terephthalate, polyethylene, polypropylene, polyvinyl chloride, polyethylene terephthalate, polystyrene, or polycarbonate.
6. The sensor of claim 4, wherein the isolating layer is made of polypyrrole, polyaniline, polythiophene, polyphenylene sulfide, polyacetylene, polyphenylacetylene or derivatives thereof.
7. The thermoelectric nanosensor of claim 4, wherein the plurality of tellurium nanostructures are subjected to a temperature change to produce an electrical signal output.
8. The thermoelectric nanosensor of claim 4, wherein the telluride nanostructure is subjected to a temperature change to produce an electrical signal output.
9. The thermoelectric nanosensor of claim 4, wherein the tellurium nanostructure is a zero-dimensional structure, a one-dimensional structure, or a two-dimensional structure.
10. A method of using the pyroelectric nanosensor of claim 4, comprising:
reacting the test object with each tellurium nanostructure of the thermoelectric nanosensor to form the tellurium nanostructure;
applying a temperature change to each telluride nano structure to enable each telluride nano structure to generate an electric signal output; and
the electrical signal output is measured through the first conductive material and the second conductive material of the pyroelectric nanosensor.
11. The method of claim 10, further comprising:
estimating a component or a concentration of the analyte from the electrical signal output.
12. The method of claim 10, wherein the analyte is a metal ion.
13. A method of using the pyroelectric nanosensor of claim 4, comprising:
making the object to be detected adsorb on each tellurium nanostructure of the thermoelectric nano sensor, so as to change the resistance value of the thermoelectric nano sensor;
applying a temperature change to the thermoelectric nano sensor to enable the thermoelectric nano sensor to generate an electric signal output; and
the electrical signal output is measured through the first conductive material and the second conductive material of the pyroelectric nanosensor.
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| US8441255B1 (en) * | 2009-01-22 | 2013-05-14 | Louisiana Tech University Research Foundation, a divison of Louisiana Tech University Foundation, Inc. | Thermocooling of GMR sensors |
| CN103628106A (en) * | 2013-11-01 | 2014-03-12 | 大连理工大学 | Method for preparing indium/tellurium porous nanowire array |
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| TWI610463B (en) * | 2016-07-11 | 2018-01-01 | 國立清華大學 | Method for forming tellurium/telluride nanowire arrays on a conductive substrate and tellurium/telluride nanowire thermoelectric device |
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| TW200636235A (en) * | 2005-04-01 | 2006-10-16 | Univ Nat Chunghsing | Fabrication method for integrated micro sensor, and micro sensor made with the same |
| US8441255B1 (en) * | 2009-01-22 | 2013-05-14 | Louisiana Tech University Research Foundation, a divison of Louisiana Tech University Foundation, Inc. | Thermocooling of GMR sensors |
| CN103628106A (en) * | 2013-11-01 | 2014-03-12 | 大连理工大学 | Method for preparing indium/tellurium porous nanowire array |
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