CN111900127B - Preparation method of TSV (through silicon via) passive adapter plate for three-dimensional system-in-package - Google Patents
Preparation method of TSV (through silicon via) passive adapter plate for three-dimensional system-in-package Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 238000005530 etching Methods 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
- H01L2224/141—Disposition
- H01L2224/1418—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/14181—On opposite sides of the body
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Abstract
The invention discloses a preparation method of a TSV (through silicon via) passive adapter plate for three-dimensional system-in-package. The method comprises the steps of implanting low-energy ions into a monocrystalline silicon substrate to a shallow depth by adopting an ion implantation process, and then carrying out high-temperature annealing to form a layer of silicon compound in the silicon substrate, so that the silicon compound divides the silicon substrate into upper top silicon and lower bulk silicon. And then, growing monocrystalline silicon with a certain thickness on the surface of the top layer silicon by adopting a molecular beam epitaxy method to be used as a substrate. The invention can fully utilize silicon material, save cost and is beneficial to realizing high-density packaging of chips.
Description
Technical Field
The invention relates to the field of integrated circuit packaging, in particular to a method for manufacturing a TSV passive adapter plate for three-dimensional system-in-package.
Background
With the rapid development of integrated circuit technology, microelectronic packaging technology is becoming a major factor that restricts the development of semiconductor technology. In order to achieve high density of electronic packages, better performance and lower overall cost, the skilled person has developed a series of advanced packaging techniques. The three-dimensional system-in-package technology has good electrical performance and high reliability, can realize high packaging density, and is widely applied to various high-speed circuits and miniaturized systems. The Through Silicon Via (TSV) interposer technology is a new technology for realizing interconnection of stacked chips in a three-dimensional integrated circuit, and a plurality of vertical interconnection vias and subsequent Redistribution Layer (RDL) are manufactured on a Silicon wafer to realize electrical interconnection between different chips. In addition, the TSV interposer technology is divided into an active interposer and a passive interposer, wherein the active interposer has active devices, and the passive interposer lacks active devices. The TSV adapter plate technology can enable the stacking density of chips in the three-dimensional direction to be maximum, the interconnection line between the chips to be shortest, the overall dimension to be minimum, the chip speed and the performance of low power consumption to be greatly improved, and the TSV adapter plate technology is the most attractive technology in the electronic packaging technology at present.
In order to meet the overall thickness requirement of the package, an important step in the conventional TSV manufacturing process is silicon thinning. However, for thinning silicon wafers, mechanical grinding is usually adopted, and a considerable thickness of silicon material is removed but cannot be recycled, resulting in a great amount of waste of silicon material.
Disclosure of Invention
In order to solve the above problems, the invention discloses a method for preparing a TSV passive interposer for system-in-package, which comprises the following steps: injecting low-energy ions into a silicon wafer to a certain depth, annealing, reacting the ions with silicon, forming a silicon compound in the silicon wafer, and separating the silicon wafer into top silicon at the upper part and bulk silicon at the lower part; epitaxially growing monocrystalline silicon on the surface of the top silicon layer to serve as a substrate; photoetching and etching the substrate to form a through silicon via penetrating through the substrate, and removing the silicon compound by wet etching to separate the substrate from bulk silicon; depositing a first insulating medium, a diffusion impervious layer and a seed crystal layer on the side wall of the through silicon via and the upper surface and the lower surface of the substrate in sequence; forming conductive metal to completely fill the through silicon via; removing part of the conductive metal, the seed crystal layer, the diffusion barrier layer and the first insulating medium by adopting a chemical mechanical polishing process, and only retaining the conductive metal, the seed crystal layer, the diffusion barrier layer and the first insulating medium in the through silicon via; forming a second insulating medium to cover the substrate and the upper and lower surfaces of the first insulating medium; forming an adhesion layer/seed layer laminated film so as to cover the conductive metal, the seed layer, the diffusion barrier layer and part of the second insulating medium; and forming a contact bump on the surface of the adhesion layer/seed layer laminated film.
In the method for manufacturing the TSV passive interposer for system-in-package of the present invention, preferably, the implanted ions are oxygen ions, and the formed silicon compound is silicon oxide.
In the method for manufacturing the TSV passive interposer for system-in-package of the present invention, preferably, the implanted ions are nitrogen ions, and the formed silicon compound is silicon nitride.
In the method for manufacturing the TSV passive interposer for system-in-package according to the present invention, preferably, the dose range of the implanted ions is 3 × 1017/cm2～2×1018/cm2The implantation energy is in the range of 100 to 200 keV.
In the preparation method of the TSV passive adapter plate for the system-in-package, the annealing temperature of the silicon wafer is preferably 500-700 ℃, and the time is preferably 1-10 hours.
In the preparation method of the TSV passive interposer for the system-in-package, the thickness of the silicon compound is preferably 200-400 nm.
In the preparation method of the TSV passive interposer for the system-in-package, the thickness of the top silicon is preferably 100-400 nm.
In the method for manufacturing the TSV passive interposer for system-in-package of the present invention, preferably, the conductive metal is copper.
In the method for preparing the TSV passive interposer for system-in-package, the monocrystalline silicon is preferably epitaxially grown by adopting a molecular beam epitaxy method, and the silicon source is SiCl4、SiHCl3、SiH2Cl2Or SiH4At least one of them, the epitaxial temperature range is 1000-1200 ℃.
In the preparation method of the TSV passive interposer for system-in-package, the diffusion barrier layer is preferably TaN, TiN, ZrN, MnSiO3At least one of; the seed crystal layer is at least one of Cu, Ru, Co, RuCo, CuRu and CuCo.
According to the invention, the substrate for preparing the TSV adapter plate is obtained by injecting oxygen ions or nitrogen ions for isolation and combining a molecular beam epitaxy technology, so that silicon materials can be fully utilized, and the cost is saved. In addition, the monocrystalline silicon grown by the molecular beam epitaxy technology is beneficial to obtaining the substrate with lower thickness for manufacturing the TSV adapter plate, which is very beneficial to realizing high-density packaging of chips, namely, more chips can be vertically stacked on the same packaging substrate.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a TSV passive interposer for a three-dimensional system-in-package.
Fig. 2 to 11 are schematic structural diagrams of steps of a TSV passive interposer manufacturing process for three-dimensional system-in-package.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly and completely understood, the technical solutions in the embodiments of the present invention will be described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the specific embodiments described herein are only for explaining the present invention and are not intended to limit the present invention. The described embodiments are only some embodiments of the invention, not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "vertical", "horizontal", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Furthermore, numerous specific details of the invention, such as structure, materials, dimensions, processing techniques and techniques of the devices are described below in order to provide a more thorough understanding of the invention. However, as will be understood by those skilled in the art, the present invention may be practiced without these specific details. Unless otherwise specified below, each part in the device may be formed of a material known to those skilled in the art, or a material having a similar function developed in the future may be used.
The technical scheme of the invention is further explained by combining the attached figures 1-11 and the embodiment. Fig. 1 is a flowchart of a TSV passive interposer manufacturing process for a three-dimensional system-in-package, and fig. 2 to 11 are schematic structural diagrams of steps of the TSV passive interposer manufacturing process for the three-dimensional system-in-package. As shown in fig. 1, the preparation method comprises the following specific steps:
step S1: a substrate is obtained. First, oxygen ions 101 are implanted into the silicon substrate 100 by ion implantation, and the oxygen ions 101 will diffuse downward, and the resulting structure is shown in fig. 2. The dosage range of oxygen ion implantation is 3 x 1017/cm2～2×1018/cm2The implantation energy is 100-200 keV, and the substrate temperature is 500-700 ℃. Then, the silicon substrate 100 is placed into a tube furnace for annealing for 1-10 hours, and the annealing temperature is 1000-1350 ℃. The implanted oxygen ions react with silicon to generate silicon oxide 201 with the thickness ranging from 200 nm to 400nm, the substrate 100 is divided into upper top silicon 202 and lower bulk silicon 200 by the silicon oxide 201, the thickness of the top silicon 202 ranges from 100 nm to 400nm, and the obtained structure is shown in FIG. 3. Next, a molecular beam epitaxy process is used to grow single crystal silicon on the surface of the top silicon 202. Wherein the silicon source used in molecular beam epitaxy can be SiCl4、SiHCl3、SiH2Cl2、SiH4And the epitaxial temperature ranges from 1000 to 1200 ℃; the thickness of the top silicon 202 is increased to 25-50 μm, and the resulting structure is shown in FIG. 4. The top layer silicon 202 is used for making the base of the TSV interposer. In this embodiment, ion implantation is performed using oxygen ions, but the present invention is not limited thereto, and nitrogen ions may be implanted to form silicon nitride in a silicon substrate.
Step S2: and forming a silicon through hole. Spin-coating photoresist on the surface of the obtained top layer silicon 202, and defining a through silicon via pattern through exposure and development processes. The top silicon 202 is then etched using a deep plasma etch (DRIE) process until the top siliconThrough contact with the silicon oxide 201. The photoresist is then dissolved or ashed in a solvent to remove the photoresist and the resulting structure is shown in fig. 5. Wherein the adopted plasma can be selected from CF4、SF6At least one of (1). The silicon oxide 201 is then etched away using hydrofluoric acid as an etchant, so that the top silicon 202 and bulk silicon 200 separate and the resulting structure is shown in fig. 6. If nitrogen ions are implanted to form silicon nitride, hot phosphoric acid may be used to etch the silicon nitride. The top layer silicon 202 is used for manufacturing a substrate of the TSV interposer, and the bulk silicon 201 can be continuously separated by adopting the above process to serve as a substrate for manufacturing the TSV interposer.
Step S3: a first insulating medium, a diffusion barrier layer and a seed layer are deposited. Depositing a layer of SiO on the surface of the silicon through hole by adopting a chemical vapor deposition method2The film 203 is used as a first insulating medium; then adopting physical vapor deposition method to deposit on SiO2A TaN film 204 is grown on the surface of the film 203 and is used as a diffusion barrier layer; next, a Cu film 205 is grown on the surface of the TaN film 204 by PVD as a seed layer, and the resulting structure is shown in FIG. 7. SiO is used in the present embodiment2As the first insulating medium, TaN is used as a diffusion barrier layer, and a Cu thin film is used as a seed layer, but the present invention is not limited thereto, and SiO may be selected2、Si3N4At least one of SiON, SiCOH and SiCOFH is used as a first insulating medium; TaN, TiN, ZrN and MnSiO can be selected3As a diffusion barrier layer; at least one of Cu, Ru, Co, RuCo, CuRu, and CuCo may be selected as the seed layer. The growth mode of the diffusion impervious layer and the seed crystal layer can also select chemical vapor deposition or atomic layer deposition.
Step S4: electroplating copper and forming contact bumps. Firstly, an electroplating process is adopted to electroplate a copper material on the surface of the seed layer 205 to serve as a conductive metal 206, the copper material completely fills the through silicon via, and the obtained structure is shown in fig. 8. A chemical mechanical polishing process is then used to remove the first insulating dielectric 203, the diffusion barrier layer 204, the seed layer 205, and the copper material 206 above and below the through-silicon via, resulting in the structure shown in fig. 9. Further, a layer of Si is deposited by adopting a chemical vapor deposition method3N4Film 207 serves as a second insulating medium; subsequently, the Si is partially removed by photoetching and etching processes3N4Film 207, guaranteed Si3N4The thin film 207 covers only the upper and lower surfaces of the silicon substrate 202 and the first insulating medium 203, and the resulting structure is shown in fig. 10. Then, a laminated film 208 composed of a Ti film and a Cu film is grown by a physical vapor deposition method, wherein the Ti film and the Cu film are respectively used as an adhesion layer and a seed layer. Next, a stacked metal composed of a Cu material and a Sn material is plated on the surface of the adhesion layer/seed layer stacked film 208 as a contact bump 209 by an electroplating method. Finally, the stacked film 208 formed by part of the adhesion layer/seed layer is removed by photolithography and etching to ensure that no conduction exists between adjacent contact bumps, and the resulting structure is shown in fig. 11. Si is used in the present embodiment3N4As the second insulating medium, however, the present invention is not limited thereto, and Si may be selected3N4At least one of SiON and SiC as a second insulating medium; wherein the second insulating medium also acts as a diffusion barrier.
As shown in fig. 11, the TSV passive interposer for three-dimensional system-in-package includes: a through-silicon via that penetrates the silicon substrate 202; a first insulating medium 203 covering the side wall of the through silicon via; a second insulating medium 207 covering the upper and lower surfaces of the silicon substrate 202 and the first insulating medium 203; a diffusion barrier layer 204 and a seed layer 205 which are formed on the side wall of the through silicon via, wherein the diffusion barrier layer 204 covers the surface of the first insulating medium 203, and the seed layer 205 covers the surface of the diffusion barrier layer 204; conductive metal 206, adhesion layer/seed layer stack 208 and contact bump 209, wherein the conductive metal 206 completely fills the silicon through hole, the adhesion layer/seed layer stack 208 covers the diffusion barrier layer 204, the seed layer 205, the upper and lower surfaces of the conductive metal 206 and a part of the second insulating medium 207, and the contact bump 209 is located on the surface of the adhesion layer/seed layer stack 208.
Preferably, the first insulating medium is SiO2、Si3N4At least one of SiON, SiCOH and SiCOFH; the diffusion barrier layer is TaN, TiN, ZrN, MnSiO3At least one of (1). The seed crystal layer is selected from Cu, Ru, Co, RuCo, CuRu and CuCoAt least one of them. Second insulating medium Si3N4At least one of SiON and SiC. The conductive metal is copper.
According to the invention, the substrate for preparing the TSV adapter plate is obtained by injecting oxygen ions or nitrogen ions for isolation and combining a molecular beam epitaxy technology, so that silicon materials can be fully utilized, and the cost is saved. In addition, the monocrystalline silicon grown by the molecular beam epitaxy technology is beneficial to obtaining the substrate with lower thickness for manufacturing the TSV adapter plate, which is very beneficial to realizing high-density packaging of chips, namely, more chips can be vertically stacked on the same packaging substrate.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention.
Claims (10)
1. A preparation method of a TSV passive interposer for three-dimensional system-in-package is characterized by comprising the following steps:
injecting low-energy ions into a silicon wafer (100) to a certain depth, annealing, reacting the ions with silicon, forming a silicon compound in the silicon wafer, and separating the silicon wafer (100) into upper top-layer silicon and lower bulk silicon; epitaxially growing single crystal silicon on the surface of the top layer silicon until the required thickness is reached, and taking the top layer silicon as a substrate (202);
photoetching and etching the substrate (202) to form a through silicon via penetrating through the substrate (202), and removing the silicon compound by wet etching to separate the substrate (202) from bulk silicon;
depositing a first insulating medium (203), a diffusion barrier layer (204) and a seed crystal layer (205) on the side wall of the through silicon via and the upper surface and the lower surface of the substrate in sequence;
forming a conductive metal (206) to completely fill the through silicon via;
removing parts of the conductive metal (206), the seed layer (205), the diffusion barrier layer (204) and the first insulating medium (203) by adopting a chemical mechanical polishing process, and only retaining the conductive metal (206), the seed layer (205), the diffusion barrier layer (204) and the first insulating medium (203) in the through silicon via;
forming a second insulating medium (207) to cover upper and lower surfaces of the substrate (202) and the first insulating medium (203);
forming an adhesion layer/seed layer stack film (208) so as to cover the conductive metal (206), the seed layer (205), the diffusion barrier layer (204) and a portion of the second insulating medium (207);
a contact bump (209) is formed on the surface of the adhesion layer/seed layer laminated film (208).
2. The method for manufacturing the TSV passive interposer for the three-dimensional system-in-package according to claim 1,
the implanted ions are oxygen ions and the silicon compound formed is silicon oxide.
3. The method for manufacturing the TSV passive interposer for the three-dimensional system-in-package according to claim 1,
the implanted ions are nitrogen ions and the silicon compound formed is silicon nitride.
4. The method for manufacturing the TSV passive interposer for three-dimensional system-in-package according to any one of claims 1 to 3,
the dose range of the implanted ions is 3 x 1017/cm2～2×1018/cm2The implantation energy is in the range of 100 to 200 keV.
5. The method for manufacturing the TSV passive interposer for three-dimensional system-in-package according to any one of claims 1 to 3,
and annealing the silicon wafer at 500-700 ℃ for 1-10 h.
6. The method for manufacturing the TSV passive interposer for three-dimensional system-in-package according to any one of claims 1 to 3,
the thickness of the silicon compound is 200 to 400 nm.
7. The method for manufacturing the TSV passive interposer for three-dimensional system-in-package according to any one of claims 1 to 3,
the thickness range of the top layer silicon is 100-400 nm.
8. The method for manufacturing the TSV passive interposer for the three-dimensional system-in-package according to claim 1,
the conductive metal is copper.
9. The method for manufacturing the TSV passive interposer for the three-dimensional system-in-package according to claim 1,
epitaxially growing the monocrystalline silicon by molecular beam epitaxy method, wherein SiCl is used as silicon source4、SiHCl3、SiH2Cl2Or SiH4At least one of them, the epitaxial temperature range is 1000-1200 ℃.
10. The method for manufacturing the TSV passive interposer for three-dimensional system-in-package according to claim 8,
the diffusion barrier layer is TaN, TiN, ZrN, MnSiO3At least one of; the seed crystal layer is at least one of Cu, Ru, Co, RuCo, CuRu and CuCo.
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| CN103426847A (en) * | 2012-05-22 | 2013-12-04 | 三星电子株式会社 | Through-silicon via (TSV) semiconductor devices having via pad inlays |
| CN104347492A (en) * | 2013-08-09 | 2015-02-11 | 上海微电子装备有限公司 | Manufacturing methods for through hole structure with high depth-to-width ratio and multi-chip interconnection |
| CN106328584A (en) * | 2016-11-22 | 2017-01-11 | 武汉光谷创元电子有限公司 | Through-silicon-via forming method and chip with through-silicon-via |
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| CN103426847A (en) * | 2012-05-22 | 2013-12-04 | 三星电子株式会社 | Through-silicon via (TSV) semiconductor devices having via pad inlays |
| CN104347492A (en) * | 2013-08-09 | 2015-02-11 | 上海微电子装备有限公司 | Manufacturing methods for through hole structure with high depth-to-width ratio and multi-chip interconnection |
| CN106328584A (en) * | 2016-11-22 | 2017-01-11 | 武汉光谷创元电子有限公司 | Through-silicon-via forming method and chip with through-silicon-via |
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