CN111892415A - Silicon carbide whisker/alumina ceramic composite material and preparation method thereof - Google Patents
Silicon carbide whisker/alumina ceramic composite material and preparation method thereof Download PDFInfo
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 90
- 239000002131 composite material Substances 0.000 title claims abstract description 86
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 71
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 238000005245 sintering Methods 0.000 claims abstract description 68
- 239000000843 powder Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000002994 raw material Substances 0.000 claims description 31
- 238000000498 ball milling Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000001035 drying Methods 0.000 claims description 17
- 230000010355 oscillation Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 4
- 239000011812 mixed powder Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910010293 ceramic material Inorganic materials 0.000 abstract description 8
- 238000000280 densification Methods 0.000 abstract description 5
- 239000011148 porous material Substances 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000005012 migration Effects 0.000 abstract description 3
- 238000013508 migration Methods 0.000 abstract description 3
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- 230000007246 mechanism Effects 0.000 abstract description 2
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- 239000000463 material Substances 0.000 description 31
- 229910052593 corundum Inorganic materials 0.000 description 12
- 210000003298 dental enamel Anatomy 0.000 description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 10
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 238000005452 bending Methods 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 8
- 239000010439 graphite Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000007731 hot pressing Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
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- 230000007797 corrosion Effects 0.000 description 2
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- 238000007545 Vickers hardness test Methods 0.000 description 1
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- -1 whiskers Substances 0.000 description 1
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Abstract
The invention relates to a silicon carbide whisker/alumina ceramic composite material and a preparation method thereof, belonging to the technical field of alumina ceramic. The preparation method of the silicon carbide whisker/alumina ceramic composite material comprises the following steps: carrying out oscillating pressure sintering on the composite powder to obtain the composite powder; the composite powder consists of silicon carbide whiskers and alumina powder. According to the preparation method of the silicon carbide whisker/alumina ceramic composite material, dynamic pressure sintering is realized by utilizing oscillating pressure sintering, the densification process of a blank is accelerated through mechanisms such as rearrangement, diffusion and migration, the discharge of closed pores at a grain boundary in the later sintering stage is accelerated, the relative density of the composite ceramic material is favorably improved, and the mechanical property of the composite ceramic material is improved.
Description
Technical Field
The invention relates to a silicon carbide whisker/alumina ceramic composite material and a preparation method thereof, belonging to the technical field of alumina ceramic.
Background
The alumina ceramic has the characteristics of high melting point, high hardness, wear resistance, corrosion resistance, low cost and the like, is an industrial ceramic material with the widest application range and the largest output in the world at present, and has wide application prospects in the fields of chemical industry, metallurgy, machinery, aerospace and the like. However, alumina ceramics have low toughness and high brittleness, and in order to expand the application fields thereof, a reinforcing phase is often required to be added to improve the toughness. The main toughening principle at present is in Al2O3The microstructure of the ceramic incorporates various energy dissipation factors such as fibers, whiskers, particles, and the like. The principle of improving fracture toughness is that the introduced reinforcement can consume more energy when the material is fractured, and the current main toughening methods include: ZrO (ZrO)2Toughening, nanotechnology toughening, whisker and fiber toughening, particle dispersion toughening and the like.
The whisker toughening is mainly to obviously improve the Al content through the functions of bridging, pinning or deflecting the whisker in the ceramic, pulling out the whisker and the like2O3Toughness of the base ceramic. The pulling-out effect of the whisker means that when the crack propagates and meets the high-strength whisker, larger shearing stress exists on the interface of the whisker and the matrix near the tip of the crack, the stress is easy to cause separation and cracking of the whisker and the interface, the whisker can be pulled out of the matrix, and the energy of external load is consumed due to interface friction to achieve the aim of toughening. At the same time, pulling out of the whiskers from the matrix creates microcracks to absorb more energy. Which is a crack tip tail effect for crack bridging. That is, when a whisker is encountered during crack propagation, the crack may be broken by transcrystallization, and an Interlocking phenomenon (Interlocking) may occur in which the crack bypasses the whisker to form a friction bridge. Research shows that the crystal whisker reinforced ceramic material and the microcrystal Al2O3The presence of crack bridges is found in ceramics. Toughening for crack deflection is a way to toughen crack non-planar fracture effects. When the crack propagates and reaches the whisker, the crack is forced to deflect along the whisker, which means that the advancing path of the crack is longer, the stress intensity at the tip of the crack is reduced, the larger the deflection angle of the crack is, the lower the energy release rate is, the better the toughening effect is, and the fracture toughness is improved.
The silicon carbide whisker is a single crystal fiber with high orientation, has uniform components of a crystal phase, and has the characteristics of corrosion resistance, strong high-temperature oxidation resistance, wear resistance and the like. The silicon carbide whiskers are used as an excellent reinforcing and toughening agent and can reinforce various ceramic matrix composite materials. However, the conventional preparation method for enhancing the alumina-based ceramic by using the silicon carbide whisker also causes the density reduction of the ceramic material, and increases the defects of pores, microcracks and the like, thereby causing the reduction of mechanical properties of the material, such as bending strength and the like.
Disclosure of Invention
The invention aims to provide a preparation method of a silicon carbide whisker/alumina ceramic composite material, which can obviously improve the bending strength of the material.
The invention also provides a silicon carbide whisker/alumina ceramic composite material prepared by the preparation method.
In order to realize the purpose, the preparation method of the silicon carbide whisker/alumina ceramic composite material adopts the technical scheme that:
a preparation method of a silicon carbide whisker/alumina ceramic composite material comprises the following steps: carrying out oscillating pressure sintering on the composite powder to obtain the composite powder; the composite powder consists of silicon carbide whiskers and alumina powder.
The preparation method of the silicon carbide whisker/alumina ceramic composite material of the invention realizes dynamic pressure sintering by utilizing oscillating pressure sintering, can accelerate the discharge of closed pores at a crystal boundary during sintering and accelerate the densification process of a blank body through mechanisms such as rearrangement, diffusion and migration, thereby reducing the sintering temperature, shortening the sintering time and improving the hardness and the bending strength of the material, and simultaneously, the oscillating pressure sintering can also inhibit abnormal growth of crystal grains to ensure that the size and the shape of the crystal grains are more uniform, further improve the hardness and the bending strength of the material, so that the prepared composite ceramic material can meet the requirements of extreme application environments on high-performance ceramic materials.
In order to further improve the compactness of the prepared alumina ceramic composite material, the temperature T of the oscillating pressure sintering is preferably 1400-1800 ℃, more preferably 1500-1800 ℃ and further more preferably 1600-1700 ℃.
In order to sufficiently perform the sintering process, it is preferable that the temperature rise rate of raising the temperature to the temperature of the oscillating pressure sintering is not more than 8 ℃/min. For example, when the temperature T of the oscillating pressure sintering is less than or equal to 1600 ℃, the rate of heating to the oscillating pressure sintering temperature T is not more than 8 ℃/min. If the temperature T of the oscillating pressure sintering is more than 1600 ℃, the temperature is firstly increased to T at a first temperature-increasing rate of not more than 8 ℃/min1Then raising the temperature to the temperature T of the oscillating pressure sintering at a second temperature rise rate not more than 5 ℃, wherein T is not less than 1550 DEG C1T, the first temperature rise rate is larger than the second temperature rise rate. Further preferably, when the temperature T of the oscillating pressure sintering is less than or equal to 1600 ℃, the rate of heating to the oscillating pressure sintering temperature T is 6-8 ℃/min. When the temperature of the oscillating pressure sintering is higher than 1600 ℃, the temperature is increased to T at the speed of 6-8 ℃/min1Then heating to the temperature T of the oscillating pressure sintering at the speed of 3-5 ℃, wherein T is more than or equal to 1550 DEG C1< T, first rate of temperature riseThe rate > the second rate of temperature rise. Temperature T1Preferably 1600 deg.c. The rapid temperature rise is beneficial to densification and inhibition of grain growth, but the sintering time is short, and the material migration, diffusion and the like cannot fully act, so that the final densification degree of the sample is not high; and by quickly raising the temperature at low temperature and slowly heating at high temperature, better densification effect and microstructure can be obtained.
In order to further improve the mechanical property of the prepared alumina ceramic composite material, preferably, the oscillation pressure sintering pressure is subjected to oscillation with the amplitude of 1-10 MPa and the oscillation frequency of 1-10 Hz on the basis of a constant pressure of 20-50 MPa. Preferably, the pressure of the oscillating hot-pressing sintering is oscillated on the basis of a constant pressure of 30-40 MPa. The amplitude of the oscillating hot-pressing sintering is 5-10 MPa. The frequency of the oscillating hot-pressing sintering is 1-5 Hz.
The silicon carbide crystal whisker and the alumina powder in the composite powder are uniformly dispersed. Preferably, the composite powder is obtained by performing wet ball milling and drying on a mixed powder of a silicon carbide whisker raw material and an aluminum oxide raw material. Further preferably, the composite powder is prepared by a method comprising the following steps: and ball-milling and drying the mixture of the silicon carbide whisker raw material, the alumina powder raw material and the wetting agent to obtain the silicon carbide ceramic. The wet ball milling is carried out in a planetary ball mill. The revolution speed of the wet ball milling is 90-150 r/min, the rotation speed is 180-300 r/min, and the time is 180-300 min. The material ball ratio of the wet ball milling is 1: 1.5-4. The diameter of the silicon carbide whisker raw material is preferably 0.2 to 3 μm, and more preferably 1 to 2 μm. The aspect ratio of the silicon carbide whisker raw material is preferably 6-48: 1, and more preferably 9-18: 1. The average particle diameter of the alumina raw material powder is preferably 0.1 to 2 μm, and more preferably 0.2 to 0.5 μm. The drying temperature is preferably 70-90 ℃. The drying time is preferably 10-15 h.
In order to improve the toughness of the alumina ceramic composite material and ensure that the material has good bending strength, the mass ratio of the silicon carbide whiskers to the alumina powder is preferably 1:2 to 25, and more preferably 3.5 to 6.5: 1. The volume ratio of the silicon carbide whiskers to the alumina powder is 5-30: 95-70, and preferably 15-25: 75-85.
In order to improve the mechanical property of the alumina ceramic composite material and reduce the energy consumption of the oscillating pressure sintering, preferably, the time of the oscillating pressure sintering is not more than 3 hours, and more preferably 0.5 to 1.5 hours.
Preferably, before the oscillating pressure sintering, 20-50 MPa of pressure is applied to the composite powder. Before the oscillatory pressure sintering, the temperature of the composite powder starts to be raised after the pressure is applied or the temperature of the composite powder starts to be raised while the pressure is applied.
The technical scheme adopted by the silicon carbide whisker/alumina ceramic composite material is as follows:
the silicon carbide whisker/alumina ceramic composite material is prepared by the preparation method of the silicon carbide whisker/alumina ceramic composite material.
The silicon carbide whisker/alumina ceramic composite material is prepared by the preparation method of the silicon carbide whisker/alumina ceramic composite material, has relative density of more than 97.71 percent, bending strength of more than 447MPa and Vickers hardness of more than 12.47GPa, and is a high-performance alumina ceramic composite material.
Drawings
FIG. 1 is an XRD spectrum of the silicon carbide whisker/alumina ceramic composite material prepared in examples 1 to 3;
FIG. 2 is a SEM image of a fracture of the SiC whisker/alumina ceramic composite material prepared in example 1;
FIG. 3 is a SEM image of the fracture of the SiC whisker/alumina ceramic composite material prepared in example 2;
FIG. 4 is a SEM image of the fracture of the SiC whisker/alumina ceramic composite material prepared in example 3.
Detailed Description
The present invention will be further described with reference to the following embodiments.
The planetary ball mill used in the preparation methods of the silicon carbide whisker/alumina ceramic composite materials of examples 1 to 3 and comparative example was a QM-QX-2L planetary ball mill manufactured by Miqi instruments Ltd; the alumina raw material powder used in examples 1 to 3 was AKP-30 produced by Sumitomo-Co Ltd, and the purity of the silicon carbide whisker raw material used was 99% or more.
Examples of the preparation method of the silicon carbide whisker/alumina ceramic composite material
Example 1
The preparation method of the silicon carbide whisker/alumina ceramic composite material comprises the following steps:
1) weighing 41.9g of alumina raw material powder and 9.05g of silicon carbide whisker raw material (the mass ratio of the alumina raw material powder to the silicon carbide whisker raw material is about 4.6:1, and the volume ratio is 80:20), putting into two ball milling tanks, adding 100ml of absolute ethyl alcohol into each ball milling tank, stirring uniformly, sealing and fixing in a planetary ball mill, putting in agate balls, controlling the material-ball ratio to be 1:2, controlling the revolution speed of the planetary ball mill to be 120r/min, controlling the rotation speed to be 240r/min, and carrying out ball milling for 256 min; the average grain diameter of the adopted alumina raw material powder is 0.3 μm, the diameter of the silicon carbide whisker is 1.5 μm, and the length-diameter ratio is 12: 1;
2) after the ball milling is finished, taking the material out of the ball milling tank, filtering the agate balls out by using a sieve, then placing the material in a rectangular enamel plate, placing the material in an air box for drying for 12 hours, then taking the material out of the rectangular enamel plate, placing the material in a heating enamel plate, placing the heating enamel plate in an electric heating constant-temperature drying box for drying for 12 hours at the temperature of 80 ℃, taking the material out after the drying is finished, and then sieving the material for multiple times to obtain dry and finew/Al2O3Composite powder;
3) take 11g of SiCw/Al2O3Putting the composite powder into a graphite mold with the inner diameter of 30mm, then putting the graphite mold filled with the composite powder into an oscillating pressure sintering furnace, applying constant pressure of 30MPa, controlling the heating rate to be 8 ℃/min, heating to 1600 ℃, starting oscillating pressure sintering, closing the oscillating pressure sintering furnace after the oscillating pressure sintering is finished, slowly cooling to room temperature, and taking out to obtain the composite powder;
the temperature of the oscillating pressure sintering is 1600 ℃, the oscillating pressure sintering pressure is subjected to oscillation with the amplitude of 5MPa and the oscillating frequency of 1Hz on the basis of 30MPa constant pressure, and the oscillating pressure sintering time is 1 h.
Example 2
The preparation method of the silicon carbide whisker/alumina ceramic composite material comprises the following steps:
1) weighing 39.3g of alumina raw material powder and 11.32g of silicon carbide whisker raw material (the mass ratio of the alumina raw material powder to the silicon carbide whisker raw material is about 3.47:1, and the volume ratio is 75:25), putting into two ball milling tanks, adding 100ml of absolute ethyl alcohol into each ball milling tank, stirring uniformly, sealing and fixing in a planetary ball mill, putting in agate balls, controlling the material-ball ratio to be 1:2, controlling the revolution speed of the planetary ball mill to be 120r/min, controlling the rotation speed to be 240r/min, and carrying out ball milling for 256 min; the average grain diameter of the adopted alumina raw material powder is 0.2 μm, the diameter of the silicon carbide whisker is 1 μm, and the length-diameter ratio is 9: 1;
2) after the ball milling is finished, taking the material out of the ball milling tank, filtering the agate balls out by using a sieve, then placing the material in a rectangular enamel plate, placing the material in an air box for drying for 12 hours, then taking the material out of the rectangular enamel plate, placing the material in a heating enamel plate, placing the heating enamel plate in an electric heating constant-temperature drying box for drying for 12 hours at the temperature of 80 ℃, taking the material out after the drying is finished, and then sieving the material for multiple times to obtain dry and finew/Al2O3Composite powder;
3) take 11g of SiCw/Al2O3Putting the composite powder into a graphite mold with the inner diameter of 30mm, then putting the graphite mold filled with the powder into an oscillating pressure sintering furnace, applying constant pressure of 40MPa, controlling the heating rate to be 8 ℃/min, heating to 1500 ℃ and starting oscillating pressure sintering, closing the oscillating pressure sintering furnace after the oscillating pressure sintering is finished, slowly cooling to room temperature and taking out to obtain the composite powder;
the temperature of the oscillating pressure sintering is 1500 ℃, the oscillating pressure sintering pressure is subjected to oscillation with the amplitude of 10MPa and the oscillating frequency of 5Hz on the basis of 40MPa constant pressure, and the oscillating pressure sintering time is 1 h.
Example 3
The preparation method of the silicon carbide whisker/alumina ceramic composite material comprises the following steps:
1) weighing 44.5g of alumina raw material powder and 6.8g of silicon carbide whisker raw material (the mass ratio of the alumina raw material powder to the silicon carbide whisker raw material is about 6.5:1, and the volume ratio is 85:15), putting the raw material powder and the silicon carbide whisker raw material into two ball milling tanks, adding 100ml of absolute ethyl alcohol into each ball milling tank, stirring uniformly, sealing and fixing the ball milling tanks in a planetary ball mill, putting agate balls, controlling the material ball ratio to be 1:2, controlling the revolution speed of the planetary ball mill to be 120r/min, controlling the rotation speed to be 240r/min, and carrying out ball milling for 256 min; the average grain diameter of the adopted alumina raw material powder is 0.5 μm, the diameter of the silicon carbide whisker is 2 μm, and the length-diameter ratio is 18: 1;
2) after the ball milling is finished, taking the material out of the ball milling tank, filtering the agate balls out by using a sieve, then placing the material in a rectangular enamel plate, placing the material in an air box for drying for 12 hours, then taking the material out of the rectangular enamel plate, placing the material in a heating enamel plate, placing the heating enamel plate in an electric heating constant-temperature drying box for drying for 12 hours at the temperature of 80 ℃, taking the material out after the drying is finished, and then sieving the material for multiple times to obtain dry and finew/Al2O3Composite powder;
3) take 11g of SiCw/Al2O3Putting the composite powder into a graphite mold with the inner diameter of 30mm, then putting the graphite mold filled with the powder into an oscillating pressure sintering furnace, applying constant pressure of 30MPa, controlling the heating rate to be 8 ℃/min to heat to 1600 ℃, then adjusting the heating rate to be 5 ℃/min to heat to 1800 ℃ to start oscillating pressure sintering, after the oscillating pressure sintering is finished, closing the oscillating pressure sintering furnace, slowly cooling to room temperature and then taking out to obtain the composite powder;
the temperature of the oscillating pressure sintering is 1800 ℃, the oscillating pressure sintering pressure is 5MPa in amplitude on the basis of 30MPa constant pressure, the oscillating frequency is 2Hz, and the oscillating pressure sintering time is 1 h.
Examples of silicon carbide whisker/alumina ceramic composites
Example 4
The silicon carbide whisker/alumina ceramic composite material of the present embodiment is prepared by the preparation method in any one of the above embodiments 1 to 3, and is not described herein again.
Comparative example
The preparation method of the silicon carbide whisker/alumina ceramic composite material of the comparative example comprises the following steps:
1) SiC was prepared according to steps 1) to 2) of example 1w/Al2O3Composite powder;
2) take 11g of SiCw/Al2O3Putting the composite powder into a graphite mold with the inner diameter of 30mm, putting the graphite mold filled with the composite powder into an oscillating pressure sintering furnace, applying constant pressure of 50MPa, controlling the heating rate to be 8 ℃/min, heating to 1600 ℃, starting hot-pressing sintering, closing the oscillating pressure sintering furnace after sintering, slowly cooling to room temperature, and taking out to obtain the composite powder; the temperature of the pressure sintering is 1600 ℃, the pressure of the pressure sintering is constant at 50MPa, and the time of the pressure sintering is 1 h.
Examples of the experiments
1) Phase characterization is performed on the silicon carbide whisker/alumina ceramic composite material prepared in the examples 1-3 by using an X-ray diffraction analyzer (XRD), and then phase change of the raw material and the preparation process and the final phase composition of the ceramic composite material are obtained through analysis, as shown in figure 1. As can be seen from the figure, the main crystal phase of the sample after the oscillating pressure sintering is Al2O3And SiC, no other diffraction peak appears, and simultaneously shows that no other impurities are introduced in the preparation process of the composite powder.
2) The microscopic morphologies of the silicon carbide whisker/alumina ceramic composite materials prepared in examples 1 to 3 were respectively examined and analyzed by using a JSM-7001F Scanning Electron Microscope (SEM) of Japanese Electron (JEOL), as shown in FIGS. 2 to 4. As can be seen from FIGS. 2 to 4, the sample reaches good density after being sintered, and the rod-shaped SiC whiskers and Al are mixed2O3Are tightly combined. Penetrating Al of SiC whisker2O3Crystals, some passing through Al2O3At the grain boundaries, no pores were evident.
3) The bulk densities of the silicon carbide whisker/alumina ceramic composite materials prepared in examples 1 to 3 and the comparative example were measured by an archimedes densitometry method. The ratio of actual density (i.e., bulk density) to theoretical density was then calculated to obtain the relative density, and the results are shown in table 1.
TABLE 1 Density and relative Density of silicon carbide whisker/alumina ceramic composite materials obtained in examples 1 to 3 and comparative example
| Density/g.cm-3 | Relative density/%) | |
| Example 1 | 3.776 | 98.95 |
| Example 2 | 3.691 | 97.71 |
| Example 3 | 3.802 | 98.63 |
| Comparative example | 3.743 | 98.09 |
4) The bending strength of the silicon carbide whisker/alumina ceramic composite material prepared in examples 1 to 4 was tested according to the experimental method for bending strength of fine ceramics in GB/T6569-2006, and the results are shown in Table 2.
TABLE 2 flexural Strength of silicon carbide whisker/alumina ceramic composite materials obtained in examples 1 to 3 and comparative example
5) The hardness of the silicon carbide whisker/alumina ceramic composite materials prepared in examples 1-3 and the comparative example was tested according to GBT 16534 and 1996 engineering ceramic Vickers hardness test method Standard, and the results are shown in Table 3.
TABLE 3 hardness of alumina ceramic materials prepared in examples 1 to 3 and comparative example
| Hardness (Unit Gpa) | |
| Example 1 | 17.16 |
| Example 2 | 16.19 |
| Example 3 | 12.47 |
| Comparative example | 16.06 |
Claims (10)
1. A preparation method of a silicon carbide whisker/alumina ceramic composite material is characterized by comprising the following steps: the method comprises the following steps: carrying out oscillating pressure sintering on the composite powder to obtain the composite powder; the composite powder consists of silicon carbide whiskers and alumina powder.
2. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to claim 1, wherein: the temperature T of the oscillating pressure sintering is 1400-1800 ℃.
3. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to claim 2, wherein: when the temperature T of the oscillating pressure sintering is less than or equal to 1600 ℃, the rate of heating to the oscillating pressure sintering temperature T is not more than 8 ℃/min; when the temperature T of the oscillating pressure sintering is more than 1600 ℃, the temperature is firstly increased to T at a first temperature-increasing rate of not more than 8 ℃/min1Then raising the temperature to the temperature T of the oscillating pressure sintering at a second temperature rise rate not more than 5 ℃, wherein T is not less than 1550 DEG C1T, the first temperature rise rate is larger than the second temperature rise rate.
4. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to claim 1, wherein: the pressure of the oscillating pressure sintering is subjected to oscillation with the amplitude of 1-10 MPa and the oscillation frequency of 1-10 Hz on the basis of the constant pressure of 20-50 MPa.
5. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to claim 1, wherein: the composite powder is obtained by performing wet ball milling and drying on mixed powder of a silicon carbide whisker raw material and an aluminum oxide raw material.
6. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to claim 1, wherein: the diameter of the silicon carbide whisker raw material is 0.2-3 mu m, and the length-diameter ratio is 6-48: 1.
7. The method for preparing a silicon carbide whisker/alumina ceramic composite material according to claim 5 or 6, wherein: the average particle size of the alumina raw material powder is 0.1-2 μm.
8. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to any one of claims 1 to 6, characterized in that: the mass ratio of the silicon carbide whiskers to the alumina powder is 1: 2-25, and the volume ratio of the silicon carbide whiskers to the alumina powder is 5-30: 95-70.
9. The method for preparing the silicon carbide whisker/alumina ceramic composite material according to any one of claims 1 to 6, characterized in that: the time of the oscillating pressure sintering is not more than 3 h.
10. A silicon carbide whisker/alumina ceramic composite material obtained by the method for preparing a silicon carbide whisker/alumina ceramic composite material according to claim 1.
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