CN111884047A - Vertical cavity surface laser light emitting device and manufacturing method thereof - Google Patents
Vertical cavity surface laser light emitting device and manufacturing method thereof Download PDFInfo
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- CN111884047A CN111884047A CN202010739830.1A CN202010739830A CN111884047A CN 111884047 A CN111884047 A CN 111884047A CN 202010739830 A CN202010739830 A CN 202010739830A CN 111884047 A CN111884047 A CN 111884047A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000000565 sealant Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012795 verification Methods 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
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- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
Abstract
The invention provides a vertical cavity surface laser emitting device, comprising: a ceramic substrate, a first vertical cavity surface laser emitting diode emitting a first wavelength, disposed on the substrate; a second vertical cavity surface laser emitting diode emitting a second wavelength, disposed on the substrate; and the drive control circuit is arranged on the substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode when the first vertical cavity surface emitting laser diode fails. The invention provides a dual-waveband vertical cavity surface laser emitting device which can be applied to different working environments. The invention also provides a manufacturing method of the vertical cavity surface laser emitting device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a vertical cavity surface laser emitting device with double wave bands and a manufacturing method thereof.
Background
A VCSEL (Vertical Cavity Emitting Laser) is a new type of semiconductor Laser. Unlike conventional edge-emitting laser emitters, VCSELs are semiconductor lasers that emit laser light perpendicular to the substrate surface and are developed based on gallium arsenide semiconductor materials. The VCSEL has incomparable advantages with the conventional emitting laser, such as a small original field divergence angle, a narrow and round emitting beam, easy coupling with the optical fiber, low threshold current, high modulation frequency, working in a single longitudinal and transverse mode in a wide temperature and current range, complete process fabrication and detection without cleavage, low cost, easy realization of large-scale array and optoelectronic integration, and better wavelength stability, reliability and expandability. The advantages of VCSELs are enabling efficient replacement of edge emitting lasers in certain areas of technology. Since birth, the VCSEL is used as a core device for a new generation of optical storage and optical communication applications, and is applied in the fields of optical parallel processing, optical identification, optical interconnection systems, optical storage, and the like. With the improvement of processes and material technologies, the advantages of VCSEL devices in the fields of power consumption, manufacturing cost, integration, heat dissipation, etc. begin to emerge, and VCSEL devices are gradually applied to commercial-grade applications such as industrial heating, environmental monitoring, medical devices, etc. and consumer-grade applications such as 3D sensing, etc. In the future, with the continuous development of the intelligent information world, the VCSEL is widely applied to the fields of consumer electronics 3D imaging, internet of things, data center/cloud computing, automatic driving and the like. Wherein, VCSEL plays more and more important effect in consumer electronics field, and VCSEL can be used to carry out smart mobile phone face identification, unmanned aerial vehicle keeps away barrier, VR/AR, robot, domestic camera etc. of sweeping the floor.
The packaging of the VCSEL is a manufacturing process which greatly affects the performance and the service life of the VCSEL, and at present, the VCSEL has only a single band, wherein the near infrared is a main band, such as 980nm or 940nm, but in some application scenarios, only the near infrared band affects the working efficiency, such as the ambient environment in the daytime and at night is different, so the VCSEL is easily interfered, and especially in high altitude or places where the industry is more concentrated, the heat source is higher, and the near infrared VCSEL is more easily failed.
Disclosure of Invention
The following description sets forth the contributions of the present invention.
In order to solve the above problems, the present invention provides a dual-band vertical cavity surface laser emitting device and a manufacturing method thereof, which solves the problem that a single-band VCSEL is prone to work failure.
The invention provides a vertical cavity surface laser emitting device, comprising:
a ceramic substrate, a first electrode and a second electrode,
a first vertical cavity surface laser emitting diode emitting a first wavelength disposed on the ceramic substrate;
a second vertical cavity surface laser emitting diode emitting a second wavelength, disposed on the ceramic substrate; and
and the driving control circuit is arranged on the ceramic substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode to work when the first vertical cavity surface emitting laser diode fails to work.
The invention also provides a manufacturing method of the vertical cavity surface laser emission device, which comprises the following steps:
providing a ceramic substrate and cleaning;
fixing a first vertical cavity surface laser emitting diode for emitting a first wavelength on the ceramic substrate;
fixing a second vertical cavity surface laser emitting diode for emitting a second wavelength on the ceramic substrate;
and a drive control circuit is fixed on the ceramic substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode to work when the first vertical cavity surface emitting laser diode fails to work.
According to the dual-band vertical cavity surface laser emitting device and the manufacturing method thereof, the dual-band VCSELs are arranged, the first wavelength VCSEL is in a normally open state, and when the first wavelength VCSEL fails to work, the second wavelength VCSEL is started, so that a mutual verification working mode is provided for the VCSEL device, the working effect is increased, and the problem that the VCSELs are prone to working failure in different working environments is solved.
Other features and advantages of the present invention will become more apparent from the following more detailed description, taken in conjunction with the accompanying drawings, which illustrate, by way of example, the advantages of the invention.
Drawings
FIG. 1 is a schematic structural diagram of a VCSEL device according to an embodiment of the invention;
FIG. 2 is a schematic circuit diagram of a VCSEL device according to an embodiment of the invention; and
FIG. 3 is a flowchart illustrating steps of a method for fabricating a VCSEL device in accordance with an embodiment of the invention.
Detailed Description
The figures illustrate the present invention, a dual-band VCSEL device and method of making the same. Various embodiments are disclosed herein. In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring particular content.
The invention provides a dual-band vertical cavity surface laser emitting device (VCSEL), which is characterized in that the dual-band VCSEL is arranged, wherein a first wavelength VCSEL is in a normally open state, and when the first wavelength VCSEL fails, a second wavelength VCSEL is started, so that a mutual verification working mode is provided for the VCSEL device, the working effect is increased, and the problem that the VCSELs are easy to work and fail under different working environments is solved.
Fig. 1 is a schematic structural diagram of a vertical cavity surface laser light emitting device according to an embodiment of the present invention. The vertical cavity surface laser light emitting device includes a ceramic substrate 110, a first vertical cavity surface laser light emitting diode 120, a second vertical cavity surface laser light emitting diode 130, a driving control circuit 140, a plastic package support 150, and a diffusion layer 160.
In one embodiment, the ceramic substrate 110 is an aluminum nitride ceramic substrate. The first VCSEL 120 is disposed on the ceramic substrate 110 for emitting laser light of a first wavelength, which in one embodiment is 905 nm. The second vcsel emitting diode 130 is disposed on the ceramic substrate 110 and emits laser light with a second wavelength, which is 680nm in one embodiment. The driving control circuit 140 is disposed on the ceramic substrate 110, and is configured to drive the first vertical cavity surface emitting laser diode 120, and start the second vertical cavity surface emitting laser diode 130 to operate when the first vertical cavity surface emitting laser diode 120 fails to operate.
In one embodiment, the package support 150 is disposed on the substrate 110, and is used for fixing the first vertical cavity surface laser emitting diode 120, the second vertical cavity surface laser emitting diode 130, and the driving control circuit 140. In one embodiment, the semiconductor package further includes a diffusion layer 160 disposed on the plastic package support 150 and covering the first vertical cavity surface laser emitting diode 120, the second vertical cavity surface laser emitting diode 130 and the driving control circuit 140, for controlling the emitting angles of the first vertical cavity surface laser emitting diode 120 and the second vertical cavity surface laser emitting diode 130. In one embodiment, the diffusion layer 160 is a lens, using a clear material such as quartz, glass, or any other suitable transparent material.
FIG. 2 is a schematic circuit diagram of a VCSEL device according to an embodiment of the invention. The first vertical cavity surface laser light emitting diode 120 and the second vertical cavity surface laser light emitting diode 130 are connected to the driving control circuit 140, and the driving control circuit 140 is connected to a host 170. When a receiving device (not shown) does not receive the signal emitted from the first vcsel diode 120, the host 170 determines that the first vcsel diode 120 fails to operate, and outputs a command to the driving control circuit 140, and the driving control circuit 140 starts the second vcsel diode 130 to operate.
FIG. 3 is a flowchart illustrating steps of a method for fabricating a VCSEL device in accordance with an embodiment of the invention. The invention relates to a method for manufacturing a vertical cavity surface laser emitting device, which comprises the following steps.
Step 310: providing a ceramic substrate and cleaning.
Step 320: a first vertical cavity surface laser emitting diode for emitting a first wavelength is fixed on the ceramic substrate.
Step 330: a second vertical cavity surface laser emitting diode for emitting a second wavelength is fixed on the ceramic substrate.
Step 340: and a drive control circuit is fixed on the ceramic substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode to work when the first vertical cavity surface emitting laser diode fails to work.
In one embodiment, the ceramic substrate is an aluminum nitride ceramic substrate. The first wavelength is 905 nm. The second wavelength is 680 nm.
In one embodiment, the manufacturing method further comprises the steps of: and fixing the first vertical cavity surface laser light emitting diode, the second vertical cavity surface laser light emitting diode and the driving control circuit by using a plastic package support.
In one embodiment, the manufacturing method further comprises the steps of: and sealing the plastic package support by using epoxy sealant.
In one embodiment, the manufacturing method further comprises the steps of: and (5) vacuumizing the plastic package support under the protection of nitrogen.
In one embodiment, the manufacturing method further comprises the steps of: and arranging a diffusion layer on the plastic package support and covering the first vertical cavity surface laser light emitting diode, the second vertical cavity surface laser light emitting diode and the drive control circuit so as to control the emission angle.
In one embodiment, the manufacturing method further comprises the steps of: and carrying out photoelectric parameter detection on the vertical cavity surface laser emission device.
According to the dual-band vertical cavity surface laser emitting device and the manufacturing method thereof, the dual-band VCSELs are arranged, wherein the first wavelength VCSEL is in a normally open state, and when the first wavelength VCSEL fails, the second wavelength VCSEL is started, so that a mutual verification working mode is provided for the VCSEL device, a working effect is increased, and the problem that the VCSELs are easy to work and fail under different working environments is solved.
Reference throughout this specification to "one embodiment," "an embodiment," "one example" or "an example" means that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment. Or an example of the present invention. Thus, the appearances of the phrases such as "in one embodiment" or "in an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments or examples. Directional terms such as "top," "down," "above," and "below" are used with reference to the orientation of the drawings as described. Furthermore, the terms "having," "including," "containing," and similar terms are defined as meaning "including" unless specifically stated otherwise. The particular features, structures, or characteristics may be included in an integrated circuit, an electronic circuit, a combinational logic circuit, or other suitable components that provide the described functionality. Additionally, it should be understood that the drawings provided herein are for illustrative purposes only of those of ordinary skill in the art and that the drawings are not necessarily drawn to scale.
The above description of illustrated examples of the present invention, including what is described in the abstract, is not intended to be exhaustive or to be limited to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications can be made without departing from the broader spirit and scope of the invention. Indeed, it should be understood that the specific example structures and materials are provided for purposes of explanation, and that other structures and materials may be used in other embodiments and examples in accordance with the teachings of the present invention. These modifications can be made to embodiments of the present invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
The present invention also provides an image sensor device including the pixel circuit described in each of the above embodiments. The image sensor device comprises a pixel circuit array which is arranged in a plurality of rows and columns and is provided in the plurality of embodiments. The image sensor device further comprises peripheral circuitry, which is mainly used for controlling and processing the output of the pixel circuits.
The examples given in the embodiments of the present invention include, but are not limited to, the explanation and illustration of the present invention as set forth herein. The above-described embodiments are for illustrative purposes only and are not to be construed as limiting the invention. Reasonable modifications and adaptations of the various embodiments of the invention are within the scope of the invention.
Claims (15)
1. A vertical cavity surface laser emitting device, comprising:
a ceramic substrate;
a first vertical cavity surface laser emitting diode emitting a first wavelength disposed on the ceramic substrate;
a second vertical cavity surface laser emitting diode emitting a second wavelength, disposed on the ceramic substrate; and
and the driving control circuit is arranged on the ceramic substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode to work when the first vertical cavity surface emitting laser diode fails to work.
2. The vcsel of claim 1, wherein when a receiver does not receive a signal from the first vcsel, the host determines that the first vcsel is inoperative and outputs a command to the driver control circuit to activate the second vcsel.
3. The vcsel of claim 1, further comprising a plastic-encapsulated support disposed on the ceramic substrate for fixing the first vcsel diode, the second vcsel diode, and the driving control circuit.
4. The vcsel of claim 1, further comprising a diffusion layer disposed on the plastic package support and covering the first vcsel diode, the second vcsel diode, and the driving control circuit for controlling an emission angle.
5. The vertical cavity surface laser emitting device of claim 1, wherein the ceramic substrate is an aluminum nitride ceramic substrate.
6. The vertical cavity surface emitting laser device according to claim 1, wherein the first wavelength is 905 nm.
7. The vertical cavity surface emitting laser device according to claim 1, wherein the second wavelength is 680 nm.
8. A method for manufacturing a vertical cavity surface laser emitting device is characterized by comprising the following steps:
providing a ceramic substrate and cleaning;
fixing a first vertical cavity surface laser emitting diode for emitting a first wavelength on the ceramic substrate;
fixing a second vertical cavity surface laser emitting diode for emitting a second wavelength on the ceramic substrate;
and a drive control circuit is fixed on the ceramic substrate and used for driving the first vertical cavity surface emitting laser diode and starting the second vertical cavity surface emitting laser diode to work when the first vertical cavity surface emitting laser diode fails to work.
9. The method of claim 8, further comprising fixing the first vertical cavity surface laser light emitting diode, the second vertical cavity surface laser light emitting diode, and the drive control circuit with a plastic package support.
10. The method of claim 8, further comprising sealing the plastic encapsulated frame with an epoxy sealant.
11. The manufacturing method of claim 8, further comprising performing vacuum protection on the inside of the plastic package support by using nitrogen.
12. The method according to claim 8, further comprising disposing a diffusion layer on the plastic package support and covering the first and second vertical-cavity surface laser light emitting diodes and the driving control circuit to control emission angles of the first and second vertical-cavity surface laser light emitting diodes.
13. The method of claim 8, wherein the ceramic substrate is an aluminum nitride ceramic substrate.
14. The method of claim 8, wherein the first wavelength is 905 nm.
15. The method of claim 8, wherein the second wavelength is 680 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202010739830.1A CN111884047A (en) | 2020-07-28 | 2020-07-28 | Vertical cavity surface laser light emitting device and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010739830.1A CN111884047A (en) | 2020-07-28 | 2020-07-28 | Vertical cavity surface laser light emitting device and manufacturing method thereof |
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| CN111884047A true CN111884047A (en) | 2020-11-03 |
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| CN202010739830.1A Pending CN111884047A (en) | 2020-07-28 | 2020-07-28 | Vertical cavity surface laser light emitting device and manufacturing method thereof |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1639782A (en) * | 2002-06-03 | 2005-07-13 | 索尼株式会社 | Two-wavelength optical element |
| CN103887706A (en) * | 2014-03-20 | 2014-06-25 | 常州华达科捷光电仪器有限公司 | Laser control circuit and method and laser level provided with control circuit |
| CN110875569A (en) * | 2020-01-17 | 2020-03-10 | 常州纵慧芯光半导体科技有限公司 | Multi-wavelength TOF packaging structure and manufacturing method |
| CN212751397U (en) * | 2020-07-28 | 2021-03-19 | 传周半导体科技(上海)有限公司 | Vertical cavity surface laser light emitting device |
-
2020
- 2020-07-28 CN CN202010739830.1A patent/CN111884047A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1639782A (en) * | 2002-06-03 | 2005-07-13 | 索尼株式会社 | Two-wavelength optical element |
| CN103887706A (en) * | 2014-03-20 | 2014-06-25 | 常州华达科捷光电仪器有限公司 | Laser control circuit and method and laser level provided with control circuit |
| CN110875569A (en) * | 2020-01-17 | 2020-03-10 | 常州纵慧芯光半导体科技有限公司 | Multi-wavelength TOF packaging structure and manufacturing method |
| CN212751397U (en) * | 2020-07-28 | 2021-03-19 | 传周半导体科技(上海)有限公司 | Vertical cavity surface laser light emitting device |
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