CN111883674B - Quantum dot light emitting diode and preparation method thereof - Google Patents

Quantum dot light emitting diode and preparation method thereof Download PDF

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Publication number
CN111883674B
CN111883674B CN201910837229.3A CN201910837229A CN111883674B CN 111883674 B CN111883674 B CN 111883674B CN 201910837229 A CN201910837229 A CN 201910837229A CN 111883674 B CN111883674 B CN 111883674B
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layer
organic buffer
buffer layer
quantum dot
electron transport
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CN111883674A (en
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罗健
庄锦勇
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Guangdong Juhua Printing Display Technology Co Ltd
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Guangdong Juhua Printing Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention relates to a quantum dot light emitting diode and a preparation method thereof. The preparation method comprises the following steps: the preparation method of the quantum dot light emitting diode is characterized by comprising the following steps of: obtaining a prefabricated part, wherein the prefabricated part comprises a substrate, an anode layer formed on the substrate and a quantum dot light-emitting layer formed on the anode layer; depositing an organic buffer layer on the quantum dot light-emitting layer; the organic buffer layer is made of a material containing-NH-, -NH 2 And an organic material of at least one group of-COOH; and depositing an electron transport layer ink on the organic buffer layer. The preparation method is favorable for spreading the electronic transmission material ink on the quantum dot layer to form a uniform electronic transmission layer, and the quantum dot light-emitting diode with high luminous efficiency and good luminous stability is prepared.

Description

Quantum dot light emitting diode and preparation method thereof
Technical Field
The invention relates to the technical field of display devices, in particular to a quantum dot light emitting diode and a preparation method thereof.
Background
Quantum dots (quantum dots) are zero-dimensional nanomaterials, typically semiconductor nanoparticles having a particle size between 2nm and 20nm, and thus may also be referred to as semiconductor nanocrystals, strictly defined as nanocrystals having a radius less than or close to the bohr radius of the exciton. Quantum dots have unique optical properties such as narrow emission spectrum, adjustable emission wavelength by controlling particle size, good light stability, and the like, and have long attracted wide interest and great attention of vast scientific researchers. In particular, in the display field, a quantum dot electroluminescent device, that is, a quantum dot Light Emitting Diode (QLED) display has advantages of high color gamut, self luminescence, fast response speed, etc., has been a research hot spot in recent years, and is considered as a new generation display following an Organic Light-Emitting Diode (OLED) display.
The structure of the quantum dot light-emitting diode is generally anode/hole injection layer/hole transmission layer/quantum dot light-emitting layer/electron transmission layer/cathode, and the quantum dots can be dispersed in a solvent to prepare printing materials such as quantum dot ink, and can be manufactured into quantum dot films by adopting methods such as printing, pad printing, spin coating and the like. The existing electron transport materials are generally ZnO-based electron transport materials. ZnO nano particles are generally easy to disperse in alcohol organic solvents, and ZnO films can also be prepared by adopting methods of printing, pad printing, spin coating and the like. The electron transport material ink is provided with printability, such as the hydrophilicity, viscosity, surface tension, boiling point, volatilization speed, dispersion stability and the like of the ink, and spreadability on the quantum dot layer, so as to ensure the luminescence uniformity and the luminescence stability of the QLED. However, the electron transport material ink is difficult to spread well on the quantum dot layer due to the effect of the quantum dot layer ligand.
Disclosure of Invention
Based on this, it is necessary to provide a method for manufacturing a quantum dot light emitting diode. The preparation method is favorable for spreading the electronic transmission material ink on the quantum dot layer to form a uniform electronic transmission layer, and is convenient for preparing the quantum dot light-emitting diode with high luminous efficiency and good luminous stability.
A preparation method of a quantum dot light emitting diode comprises the following steps:
obtaining a prefabricated part, wherein the prefabricated part comprises a substrate, an anode layer formed on the substrate and a quantum dot light-emitting layer formed on the anode layer;
depositing an organic buffer layer on the quantum dot light-emitting layer; the material of the organic buffer layer is an organic material containing at least one group of-NH-, -NH2 and-COOH;
and depositing an electron transport layer ink on the organic buffer layer.
In one embodiment, the temperature at which the organic buffer layer is deposited over the quantum dot light emitting layer is greater than or equal to the melting point of the material of the organic buffer layer, and the temperature at which the electron transport layer ink is deposited over the organic buffer layer is less than the melting point of the material of the organic buffer layer.
In one embodiment, the temperature at which the electron transport layer ink is deposited over the organic buffer layer is greater than 0 ℃ and at least 5 ℃ lower than the melting point of the material of the organic buffer layer; and/or the temperature when the organic buffer layer is deposited on the quantum dot luminescent layer is increased by 5 to 50 ℃ based on the melting point of the material of the organic buffer layer.
In one embodiment, after depositing the electron transport layer ink on the organic buffer layer, the method for preparing the quantum dot light emitting diode further includes: and removing the solvent and the organic buffer layer in the electron transport layer ink under the conditions of heating and vacuumizing to form an electron transport layer.
In one embodiment, the solvent in the ink of the electron transport layer and the organic buffer layer are removed under the conditions of heating at a preset temperature and vacuumizing; the preset temperature is greater than the melting point of the material of the organic buffer layer.
In one embodiment, the preset temperature is increased by 5 to 50 ℃ based on the melting point of the material of the organic buffer layer.
In one embodiment, the preset temperature is increased by 10 to 30 ℃ based on the melting point of the material of the organic buffer layer.
In one embodiment, the material of the organic buffer layer has a melting point of 20-50 ℃ and a boiling point of 150-350 ℃; and/or the thickness of the organic buffer layer is 10-50nm.
In one embodiment, the material of the organic buffer layer is selected from at least one of didecylamine, dodecylamine, p-toluidine, N-methylacetamide, 2-pyrrolidone, urethane, triethanolamine, diethanolamine, triisopropanolamine, decanoic acid, and t-valeric acid.
The invention also provides the quantum dot light emitting diode prepared by the preparation method.
Compared with the prior art, the invention has the following beneficial effects:
the invention relates to a preparation method of a quantum dot light-emitting diode, which comprises the steps of depositing an organic buffer layer on a quantum dot light-emitting layer after the preparation of the quantum dot light-emitting layer, wherein the organic buffer layer is made of a material containing-NH-, -NH 2 And an organic material of at least one group in-COOH, thereby changing the interface property of the quantum dot luminescent layer, reducing the contact angle of the electron transport layer ink in the film forming process, and enabling the electron transport layer ink to be well spread on the surface of the electron transport layer ink to form a film uniformly. Therefore, the preparation method is favorable for spreading the electron transport material ink on the quantum dot layer to form a uniform electron transport layer, so that the prepared quantum dot light-emitting diode has high light-emitting efficiency and light-emitting stabilityGood.
Detailed Description
The quantum dot light emitting diode and the preparation method thereof according to the present invention are described in further detail below with reference to specific examples.
It will be understood that when an element is referred to as being "formed on" … …, it can be directly on the other element or intervening elements may also be present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
The embodiment of the invention provides a preparation method of a quantum dot light emitting diode, which comprises the following steps:
obtaining a prefabricated part, wherein the prefabricated part comprises a substrate, an anode layer formed on the substrate and a quantum dot light-emitting layer formed on the anode layer;
depositing an organic buffer layer on the quantum dot light-emitting layer; the material of the organic buffer layer is an organic material containing at least one group of-NH-, -NH2 and-COOH;
and depositing an electron transport layer ink on the organic buffer layer.
The prefabricated member with the quantum dot luminescent layer refers to an intermediate device obtained after finishing the quantum dot luminescent layer and the front working procedure of the quantum dot luminescent layer according to requirements. In some embodiments, the structure of the preform may include a substrate, and an anode/hole injection layer/hole transport layer/quantum dot light emitting layer, or an anode/hole injection layer/quantum dot light emitting layer, or an anode/hole transport layer/quantum dot light emitting layer. Wherein, the anode, the hole injection layer, the hole transport layer and the quantum dot luminescent layer can all be made of common materials existing in the field. When a hole transport layer is arranged between the anode and the quantum dot luminescent layer, the carrier transport performance can be improved, and higher luminescent efficiency can be obtained.
In one specific embodiment, the temperature (T 3 ) Greater than or equal to the melting point (T) 0 ) And a temperature (T) at which the electron transport layer ink is deposited over the organic buffer layer 2 ) Less than the melting point (T) 0 )。
Control temperature T 2 Less than T 0 The organic buffer layer can be ensured to be in a solid state, so that the ink of the electron transport layer is supported, and the spreading of the ink of the electron transport layer is more facilitated. Understandably, T 2 Or not less than T 0 In this case, the organic buffer layer is in a molten or partially molten state, which promotes spreading of the electron transport layer ink over the quantum dot light-emitting layer, but not so much as depositing the electron transport layer ink directly on the quantum dot light-emitting layer 2 Less than T 0 When (1). Preferably, 0 DEG C<T 2 <T 0 -5℃。
Control temperature T 3 Greater than T 0 . The material of the organic buffer layer can have better fluidity on the quantum dot light-emitting layer, which is more beneficial to the deposition and spreading of the organic buffer layer, especially when the organic buffer layer is deposited in a manner that the corresponding material is directly paved on the quantum dot light-emitting layer after being melted. It will be appreciated that the organic buffer layer may also be deposited by solvent-dispersing the corresponding material to prepare an ink, followed by printing. Preferably T 3 ＝T 0 +5 to 50 ℃.
In a specific embodiment, after depositing the electron transport layer ink on the organic buffer layer, the method for preparing the quantum dot light emitting diode further includes: and removing the solvent and the organic buffer layer in the electron transport layer ink under the conditions of heating and vacuumizing to form an electron transport layer.
Preferably, at a preset temperature (T 1 ) Heating and vacuumizing to remove the ink of the electron transport layerThe organic buffer layer; said preset temperature (T 1 ) Is greater than the melting point (T 0 )。
The material of the organic buffer layer has a melting point T 0 After depositing the electron transport layer ink, heating to a temperature T 1 ，T 1 Greater than T 0 And vacuum drying is carried out, under the condition, the material of the organic buffer layer can be converted into liquid, and the liquid can be removed together with the solvent in the ink of the electron transport layer, so that the performance of the device is not affected.
Preferably, the preset temperature is increased by 5 to 50 ℃ based on the melting point of the material of the organic buffer layer. Control T 1 ＝T 0 The material of the organic buffer layer can be better melted into a liquid state by matching with the material of the organic buffer layer at the temperature of +5 to 50 ℃, and the material is more favorable for synchronously removing the solvent in the ink of the electron transport layer, so that the electron transport layer with a flat surface and uniform thickness is formed. More preferably, the preset temperature is increased by 10 to 30 ℃ based on the melting point of the material of the organic buffer layer, T 1 ＝T 0 +10 to 30℃.
In addition, the vacuum is preferably applied to a pressure of less than 1X 10 -4 pa. More preferably, the air pressure is made to be less than 0.5X10 -4 。
In one specific embodiment, the heating and evacuating time can be controlled to be 5-30min.
Preferably, the organic buffer layer has a melting point T 0 =20-50 ℃, boiling point 150-350 ℃. The organic material with the melting point and boiling point characteristics is adopted as the material of the organic buffer layer, so that the organic buffer layer is easy to deposit and form, the functionality of other functional layers of the prefabricated member is not affected, and meanwhile, the organic material is easy to remove in a heating and vacuum drying state, so that the influence on the performance of the device is further reduced.
More preferably, the material of the organic buffer layer is at least one selected from the group consisting of didecylamine, dodecylamine, p-toluidine, N-methylacetamide, 2-pyrrolidone, urethane, triethanolamine, diethanolamine, triisopropanolamine, decanoic acid, and t-valeric acid.
In some specific embodiments, the organic buffer layer has a thickness of 10-50nm.
In one specific embodiment, the solvent in the electron transport layer ink is an organic alcohol solvent such as one or more of heptanol, nonanol, 4-methyl-3-heptanol, 2-ethylhexanol, trimethylnonanol, 5-ethyl-2-nonanol, 2-hexyl-1-decanol, 2-octyldodecanol, 3-methylphenylpentanol, 7-phenyl-1-heptanol, 1-phenyl-1-octanol.
In one specific embodiment, the material of the electron transport layer is at least one of zinc oxide based electron transport materials, such as ZnO, znAlO, znMgO, znCdO, znNiO.
In one specific embodiment, the preparation method comprises the following steps:
sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain the prefabricated member;
forming the electron transport layer on the quantum dot light-emitting layer according to the method;
a cathode is deposited over the electron transport layer.
The embodiment of the invention also provides the quantum dot light emitting diode prepared by the preparation method.
The following examples are given, and unless otherwise indicated, all the materials used in the examples are commercially available products.
Example 1
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing an organic buffer layer on the quantum dot luminescent layer, and heating the device to T in the deposition process 3 =28 ℃; the organic buffer layer is made of triethanolamine, and the thickness of the organic buffer layer is 10nm;
(4) Depositing electron transport layer ink (ZnO/diethylene glycol ink) on the organic buffer layer, setting the device temperature as T in the deposition process 2 =15 ℃; then heat to temperature T 1 Vacuum drying at 30deg.C (air pressure 1×10 -5 Pa, the time is 30 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Example 2
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing an organic buffer layer on the quantum dot luminescent layer (CdSe/ZnS quantum dot), setting the device temperature to T in the deposition process 3 =55 ℃; the organic buffer layer is made of didecylamine, and the thickness of the organic buffer layer is 20nm;
(4) Depositing electron transport layer ink (ZnO/glycol ink) on the organic buffer layer, setting the device temperature as T in the deposition process 2 =35 ℃; then heat to temperature T 1 Vacuum drying at 55deg.C (air pressure 1×10 -5 Pa, the time is 20 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Example 3
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing an organic buffer layer on the quantum dot luminescent layer (CdS quantum dot), wherein the device temperature is set to be T in the deposition process 3 =40 ℃; the organic buffer layer is made of dodecylamine and has a thickness of 25nm;
(4) Depositing electron transport layer ink (ZnO/glycerol ink) on the organic buffer layer, and setting the device temperature as T in the deposition process 2 =20 ℃; then heat to temperature T 1 Vacuum drying at 42℃under 1X 10 g -5 Pa, the time is 25 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Example 4
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing an organic buffer layer on the quantum dot luminescent layer (CdS quantum dot), wherein the device temperature is set to be T in the deposition process 3 =35 ℃; the organic buffer layer is made of 2-pyrrolidone, and the thickness of the organic buffer layer is 18nm;
(4) Depositing electron transport layer ink (ZnO/glycerol ink) on the organic buffer layer, and setting the device temperature as T in the deposition process 2 =18 ℃; then heat to temperature T 1 Vacuum drying at 38deg.C (air pressure 1×10 -6 Pa, the time is 20 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Example 5
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) At the quantum dot light-emitting layerDepositing an organic buffer layer on the (CdS quantum dot), setting the temperature of the device to T in the deposition process 3 =60 ℃; the organic buffer layer is made of urethane, and the thickness of the organic buffer layer is 20nm;
(4) Depositing electron transport layer ink (ZnO/glycerol ink) on the organic buffer layer, and setting the device temperature as T in the deposition process 2 =25 ℃; then heat to temperature T 1 =65 ℃, vacuum drying (1×10) -6 Pa, the time is 15 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Example 6
The embodiment is a quantum dot light emitting diode, and the preparation method thereof is as follows:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing an organic buffer layer on the quantum dot luminescent layer (CdS quantum dot), wherein the device temperature is set to be T in the deposition process 3 =50 ℃; the organic buffer layer is made of tertiary valeric acid, and the thickness of the organic buffer layer is 30nm;
(4) Depositing electron transport layer ink (ZnO/glycerol ink) on the organic buffer layer, and setting the device temperature as T in the deposition process 2 =25 ℃; then heat to temperature T 1 =50 ℃, vacuum drying (1×10) -5 Pa, the time is 20 min), removing the solvent in the electron transport layer ink and the organic buffer layer to form an electron transport layer;
(5) A cathode is deposited over the electron transport layer.
Comparative example 1
The comparative example is a quantum dot light emitting diode, and the preparation method is the same as that of example 2, and the difference is that: the electron transport layer is directly deposited without the associated steps of the organic buffer layer. The method comprises the following steps:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer (CdSe/ZnS quantum dots) on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing electron transport layer ink (ZnO/glycol ink) on the quantum dot luminescent layer, and setting the device temperature as T in the deposition process 2 =35 ℃; then heat to temperature T 1 =55 ℃, while vacuum drying (1×10 -5 Pa, the time is 20 min), and removing the solvent in the electron transport layer ink to form an electron transport layer;
(4) A cathode is deposited over the electron transport layer.
Comparative example 2
The comparative example is a quantum dot light emitting diode, and the preparation method is the same as that of example 3, except that: the electron transport layer is directly deposited without the associated steps of the organic buffer layer. The method comprises the following steps:
(1) Providing a patterned ITO substrate;
(2) Sequentially depositing a hole transport layer and a quantum dot luminescent layer (CdS quantum dots) on the patterned ITO substrate to obtain a prefabricated member;
(3) Depositing electron transport layer ink (ZnO/glycerol ink) on the quantum dot luminescent layer, and heating the device to T in the deposition process 2 =20 ℃; then heat to temperature T 1 =42 ℃, while vacuum drying (1×10 -5 Pa, the time is 25 min), removing the solvent in the electron transport layer ink to form an electron transport layer;
(4) A cathode is deposited over the electron transport layer.
The spreadability of the electron transport layer inks in examples and comparative examples was tested:
the testing method comprises the following steps: in the embodiment, after the electron transport layer ink is deposited on the organic buffer layer, in the comparative example, after the electron transport layer ink is deposited on the quantum dot light emitting layer, an interface contact angle test is performed, and meanwhile, a light emitting uniformity test is performed on the prepared quantum dot light emitting diode.
The test results are shown in table 1 below:
TABLE 1
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.

Claims (9)

1. The preparation method of the quantum dot light emitting diode is characterized by comprising the following steps of:
obtaining a prefabricated part, wherein the prefabricated part comprises a substrate, an anode layer formed on the substrate and a quantum dot light-emitting layer formed on the anode layer;
depositing an organic buffer layer on the quantum dot light-emitting layer; the material of the organic buffer layer is at least one selected from didecylamine, dodecylamine, 2-pyrrolidone, ethyl carbamate, triethanolamine, diethanolamine, triisopropanolamine, decanoic acid and tertiary valeric acid;
depositing an electron transport layer ink over the organic buffer layer;
removing the solvent and the organic buffer layer in the electron transport layer ink under the conditions of heating and vacuumizing to form an electron transport layer;
wherein the temperature of the organic buffer layer deposited on the quantum dot light-emitting layer is greater than or equal to the melting point of the material of the organic buffer layer, and the temperature of the electron transport layer ink deposited on the organic buffer layer is less than the melting point of the material of the organic buffer layer;
the organic buffer layer is used for reducing the contact angle of the electron transport layer ink in the film forming process.
2. The method of claim 1, wherein the temperature at which the electron transport layer ink is deposited over the organic buffer layer is greater than 0 ℃ and at least 5 ℃ lower than the melting point of the material of the organic buffer layer; and/or the temperature when the organic buffer layer is deposited on the quantum dot luminescent layer is increased by 5 to 50 ℃ based on the melting point of the material of the organic buffer layer.
3. The method of claim 1, wherein the vacuum is applied to a pressure of less than 1 x 10 -4 pa; and/or
The heating and vacuumizing time is 5-30min.
4. The method for manufacturing a quantum dot light emitting diode according to claim 1, wherein the solvent in the electron transport layer ink and the organic buffer layer are removed under heating at a preset temperature and vacuum pumping; the preset temperature is greater than the melting point of the material of the organic buffer layer.
5. The method of claim 4, wherein the predetermined temperature is increased by 5 to 50 ℃ based on a melting point of a material of the organic buffer layer.
6. The method of claim 5, wherein the predetermined temperature is increased by 10 to 30 ℃ based on a melting point of a material of the organic buffer layer.
7. The method of any one of claims 1 to 6, wherein the organic buffer layer has a thickness of 10 to 50nm.
8. The method for manufacturing a quantum dot light emitting diode according to any one of claims 1 to 6, wherein the material of the electron transport layer is a zinc oxide-based electron transport material; and/or
The solvent of the electron transport layer ink is an organic alcohol solvent.
9. A quantum dot light emitting diode prepared by the preparation method according to any one of claims 1 to 8.
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