CN111883618A - Preparation method of ozonization alkali polishing SE-PERC solar cell - Google Patents
Preparation method of ozonization alkali polishing SE-PERC solar cell Download PDFInfo
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- CN111883618A CN111883618A CN202010767827.0A CN202010767827A CN111883618A CN 111883618 A CN111883618 A CN 111883618A CN 202010767827 A CN202010767827 A CN 202010767827A CN 111883618 A CN111883618 A CN 111883618A
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- solar cell
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- alkali polishing
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- 239000003513 alkali Substances 0.000 title claims abstract description 19
- 238000005498 polishing Methods 0.000 title claims abstract description 19
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000006385 ozonation reaction Methods 0.000 title claims abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 15
- 238000002161 passivation Methods 0.000 claims abstract description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000003647 oxidation Effects 0.000 claims abstract description 13
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000007639 printing Methods 0.000 claims abstract description 8
- 239000011241 protective layer Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000002347 injection Methods 0.000 claims abstract description 4
- 239000007924 injection Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000002310 reflectometry Methods 0.000 claims description 6
- 238000010079 rubber tapping Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 239000010410 layer Substances 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- XNRNVYYTHRPBDD-UHFFFAOYSA-N [Si][Ag] Chemical compound [Si][Ag] XNRNVYYTHRPBDD-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention relates to the field of solar cell preparation, in particular to an ozonization alkali polishing SE-PERC solar cell preparation method, which is carried out in the preparation process strictly according to the process steps of texturing, diffusion, front heavy doping, ozonization, back PSG removal, alkali polishing, front oxidation, front silicon nitride film deposition, back passivation film deposition, back laser tapping, electrode printing, high-temperature sintering and electric injection, wherein in the ozonization step, ozone is used for oxidation in a front heavy doping region at normal temperature to form a 1.0-4.0nm compact silicon dioxide protective layer.
Description
Technical Field
The invention relates to the field of solar cell preparation, in particular to the field of SE-PERC solar cell preparation.
Background
The SE-PERC solar cell is one of the most popular high-efficiency cells in the market at present, and the front laser heavy doping technology (SE) and the local contact back passivation technology (PERC) are combined, so that the efficiency of the solar cell is greatly improved. The SE-PERC solar cell sequentially comprises a back electrode, a back electric field, a SiNx/SiNxOx laminated layer, P-type silicon, an N + + layer, an N + layer, silicon oxide, silicon nitride and a positive electrode from bottom to top, wherein the N + + layer is realized by advancing phosphorus in phosphosilicate glass (PSG) through front laser. The existing preparation method of the SE-PERC battery is mainly an acid etching preparation method, and the preparation process comprises the following steps: texturing, diffusing, front laser-acid etching and polishing, PSG removing, annealing, back deposition of a passivation film, deposition of an antireflection film, back laser hole opening, back electrode, back electric field and positive electrode printing and high-temperature sintering. In the preparation process of the SE-PERC battery, the acid polishing method has the advantages of low reflectivity, large light projection loss and low conversion efficiency although the process is simple.
In addition, researches show that the sheet resistance of a heavily doped region and the sheet resistance difference between a heavily doped region and an undoped region of a silicon wafer in the preparation process of the SE-PERC solar cell are related to a silicon dioxide protective layer formed after subsequent oxidation, and need to be selected in a coordinated manner, and also show that a silicon nitride film deposited on the front side and a passivation film deposited on the back side are related to the silicon dioxide protective layer formed after oxidation, and need to be selected in a coordinated manner.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to further improve the conversion efficiency of the SE-PERC solar cell.
The technical scheme adopted by the invention is as follows: an ozonization alkali polishing SE-PERC solar cell preparation method comprises the following steps of texturing, diffusion, front heavy doping, ozonization, back PSG removal, alkali polishing, front oxidation, front silicon nitride film deposition, back passivation film deposition, back laser tapping, electrode printing, high-temperature sintering and electrical injection, wherein in the ozonization step, ozone is used for oxidation in a front heavy doping region at normal temperature to form a 1.0-4.0nm dense silicon dioxide protective layer, phosphorus diffusion is adopted, and the sheet resistance of a silicon wafer after phosphorus diffusion is 100-minus 170 omega/sq. In the front heavy doping, the difference value of the sheet resistance of the heavily doped region and the sheet resistance of the undoped region of the silicon wafer is 30-70 omega/sq. In the alkali polishing, after the back surface is used for alkali polishing, the weight of each square meter is reduced by 3-11 g; the reflectivity of the back of the polished silicon wafer is 35-45%. After the silicon nitride film is deposited on the front surface, the thickness of the silicon nitride film is 60-90nm, and the refractive index is 1.5-3.0. When a passivation film is deposited on the back surface, the passivation film is a silicon oxynitride + silicon nitride film, and the thickness of the passivation film is 80-160 nm.
The invention has the beneficial effects that: the invention effectively prevents the problem of sheet resistance rise caused by surface phosphorus loosening in the traditional alkali polishing process by adopting the combination of ozonization and alkali polishing, and prevents the problems of poor contact of silver and silicon and reduction of the conversion efficiency of the battery after electrode printing. In addition, after the front heavy doping is coordinated, the sheet resistance of the heavily doped region of the silicon wafer and the sheet resistance difference value of the heavily doped region of the silicon wafer as well as the thickness of the silicon nitride film deposited on the front surface and the material of the passivation film deposited on the back surface are selected, so that the conversion efficiency of the cell is further improved.
Detailed Description
The invention aims to provide a preparation method of a high-efficiency SE-PERC solar cell, which can effectively improve the back reflectivity of the solar cell and does not influence the front sheet resistance; the conversion efficiency of the solar cell is effectively improved.
The invention also aims to solve the technical problem of providing a novel ozone oxidation alkali polishing SE-PERC solar cell preparation method, so that the conversion efficiency is improved.
In order to solve the technical problems and achieve corresponding technical effects, the invention provides a preparation method of a novel ozone oxidation alkali polishing SE-PERC solar cell, which sequentially comprises the following steps:
forming a suede on two sides of a silicon wafer;
carrying out phosphorus diffusion on the surface of the silicon wafer; the sheet resistance of the silicon wafer after phosphorus diffusion is 100-.
Carrying out laser heavy doping on the front side of the silicon wafer; the difference value of the sheet resistance of the heavily doped region and the sheet resistance of the undoped region of the silicon wafer is 30-70 omega/sq. Forming an ozonized silicon dioxide protective layer in the heavily doped region on the front surface of the silicon wafer; the thickness of the formed silicon dioxide protective layer is 1.0-4.0 nm.
Removing phosphorosilicate glass on the back of the silicon wafer; and removing the phosphorosilicate glass on the back surface of the silicon wafer by adopting an HF solution, wherein the volume concentration of the HF solution is 3-9%.
Carrying out alkali polishing on the back of the silicon wafer; the weight of the silicon wafer is reduced by 0.1-0.3g (166 mm: 166 mm); the reflectivity of the back of the polished silicon wafer is 35-45%.
Carrying out oxidation treatment on the silicon wafer, wherein the oxidation also adopts ozone oxidation;
depositing a silicon nitride film on the front surface of the silicon wafer; the thickness of the silicon nitride film is 60-90nm, and the refractive index is 1.5-3.0.
Depositing a passivation film on the back of the silicon wafer; the passivation film is silicon oxynitride + silicon nitride film with a thickness of 80-160 nm.
Performing laser film opening on the back of the silicon wafer; the laser power is 25-35W, and the diameter of the opening spot is 20-40 mu m.
Printing back electrode silver paste and back electric field aluminum paste on the back surface of the silicon wafer, and printing positive electrode silver paste on the front surface of the silicon wafer;
sintering the silicon wafer after the process is finished at high temperature to form a silicon-based battery; the sintering temperature is 400-900 ℃.
And performing electrical injection on the silicon-based battery after sintering.
According to the invention, the reflectivity of the back of the solar cell is effectively improved by using back alkali polishing, so that the transmissivity of a long wave band is obviously reduced, the transmission loss of light is reduced, the current density Jsc is increased, and the conversion efficiency of the SE-PERC solar cell is further improved.
According to the invention, through two times of ozonization processes, an ozonized silicon dioxide protective layer is formed in the heavily doped region of the front surface of the silicon wafer, so that the problem of sheet resistance rise caused by surface phosphorus loosening in the traditional alkali polishing process is effectively prevented, and the problems of poor silver-silicon contact after electrode printing and reduction of battery conversion efficiency are prevented. Through the preparation process, the conversion efficiency of the solar cell can be improved to be more than or equal to 23.40%.
Claims (6)
1. An ozonization alkali polishing SE-PERC solar cell preparation method is characterized in that: the method comprises the following process steps of texturing, diffusion, front heavy doping, ozonization, back PSG removal, alkali polishing, front oxidation, front silicon nitride film deposition, back passivation film deposition, back laser hole opening, electrode printing, high-temperature sintering and electric injection, wherein in the ozonization step, ozone is used for oxidation in a front heavy doping area at normal temperature to form a 1.0-4.0nm dense silicon dioxide protective layer.
2. The method of claim 1, wherein the ozonated alkaline polished SE-PERC solar cell is prepared by: phosphorus diffusion is adopted for diffusion, and the sheet resistance of the silicon wafer after the phosphorus diffusion is 100-170 omega/sq.
3. The method of claim 1, wherein the ozonated alkaline polished SE-PERC solar cell is prepared by: in the front heavy doping, the difference value of the sheet resistance of the heavily doped region and the sheet resistance of the undoped region of the silicon wafer is 30-70 omega/sq.
4. The method of claim 1, wherein the ozonated alkaline polished SE-PERC solar cell is prepared by: in the alkali polishing, after the back surface is used for alkali polishing, the weight of each square meter is reduced by 3-11 g; the reflectivity of the back of the polished silicon wafer is 35-45%.
5. The method of claim 1, wherein the ozonated alkaline polished SE-PERC solar cell is prepared by: after the silicon nitride film is deposited on the front surface, the thickness of the silicon nitride film is 60-90nm, and the refractive index is 1.5-3.0.
6. The method of claim 1, wherein the ozonated alkaline polished SE-PERC solar cell is prepared by: when a passivation film is deposited on the back surface, the passivation film is a silicon oxynitride + silicon nitride film, and the thickness of the passivation film is 80-160 nm.
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| CN202010767827.0A CN111883618A (en) | 2020-08-03 | 2020-08-03 | Preparation method of ozonization alkali polishing SE-PERC solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113097346A (en) * | 2021-04-20 | 2021-07-09 | 山西潞安太阳能科技有限责任公司 | Laminated film passivation structure suitable for back of silicon battery |
| CN113161449A (en) * | 2021-04-20 | 2021-07-23 | 山西潞安太阳能科技有限责任公司 | Preparation method of PERC solar cell |
| CN113257954A (en) * | 2021-04-20 | 2021-08-13 | 山西潞安太阳能科技有限责任公司 | Method for solving poor EL of alkali-polished SE-PERC battery |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600159A (en) * | 2015-01-22 | 2015-05-06 | 江西瑞晶太阳能科技有限公司 | High-frequency discharge preparation method of rejection PID crystalline silicon cell |
| JP2019110348A (en) * | 2015-03-24 | 2019-07-04 | 株式会社カネカ | Manufacturing method of crystalline silicon substrate for solar cell, manufacturing method of crystalline silicon solar cell, and manufacturing method of crystalline silicon solar cell module |
| CN110459615A (en) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | A kind of composite dielectric passivation layer structure solar cell and its preparation process |
| CN111341880A (en) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | Method for manufacturing solar cell |
-
2020
- 2020-08-03 CN CN202010767827.0A patent/CN111883618A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104600159A (en) * | 2015-01-22 | 2015-05-06 | 江西瑞晶太阳能科技有限公司 | High-frequency discharge preparation method of rejection PID crystalline silicon cell |
| JP2019110348A (en) * | 2015-03-24 | 2019-07-04 | 株式会社カネカ | Manufacturing method of crystalline silicon substrate for solar cell, manufacturing method of crystalline silicon solar cell, and manufacturing method of crystalline silicon solar cell module |
| CN110459615A (en) * | 2019-08-19 | 2019-11-15 | 通威太阳能（成都）有限公司 | A kind of composite dielectric passivation layer structure solar cell and its preparation process |
| CN111341880A (en) * | 2020-03-06 | 2020-06-26 | 浙江正泰太阳能科技有限公司 | Method for manufacturing solar cell |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113097346A (en) * | 2021-04-20 | 2021-07-09 | 山西潞安太阳能科技有限责任公司 | Laminated film passivation structure suitable for back of silicon battery |
| CN113161449A (en) * | 2021-04-20 | 2021-07-23 | 山西潞安太阳能科技有限责任公司 | Preparation method of PERC solar cell |
| CN113257954A (en) * | 2021-04-20 | 2021-08-13 | 山西潞安太阳能科技有限责任公司 | Method for solving poor EL of alkali-polished SE-PERC battery |
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