CN111883608A - Germanium-silicon avalanche photodetector and manufacturing method thereof - Google Patents
Germanium-silicon avalanche photodetector and manufacturing method thereof Download PDFInfo
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- CN111883608A CN111883608A CN202010652114.XA CN202010652114A CN111883608A CN 111883608 A CN111883608 A CN 111883608A CN 202010652114 A CN202010652114 A CN 202010652114A CN 111883608 A CN111883608 A CN 111883608A
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- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 142
- 239000010703 silicon Substances 0.000 claims abstract description 142
- 230000007704 transition Effects 0.000 claims abstract description 53
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 46
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 4
- 239000001301 oxygen Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 15
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000010354 integration Effects 0.000 description 9
- 230000009471 action Effects 0.000 description 5
- 239000000969 carrier Substances 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The germanium-silicon avalanche photodetector comprises an oxygen burying layer, a bottom layer, an intrinsic germanium layer, a covering layer, a P electrode and an N electrode, wherein the bottom layer sequentially comprises an intrinsic bottom silicon region, a transition bottom silicon region, a multiplication region and an N-type heavily doped bottom silicon region; the intrinsic germanium layer is arranged on the bottom layer; the covering layer covers the intrinsic germanium layer, the covering layer sequentially comprises a P-type heavily-doped covering layer silicon region, an intrinsic covering layer silicon region and a transition covering layer silicon region, and one end, far away from the intrinsic covering layer silicon region, of the transition covering layer silicon region is in contact with the transition bottom layer silicon region to form a charge transition region; the P electrode is connected with the P-type heavily doped covering layer silicon area; the N electrode is connected with the N type heavily doped bottom silicon region. The germanium-silicon avalanche photodetector does not adopt a laminated structure, is convenient to integrate with other functional elements, and can be produced in a large scale.
Description
Technical Field
The application relates to the technical field of photonic integrated devices, in particular to a germanium-silicon avalanche photodetector and a manufacturing method thereof.
Background
At present, the avalanche photodetector is widely introduced in an access network and a 5G light-bearing module due to high sensitivity. The silicon-based photoelectron integration technology can realize the integration of various functional devices with high density and low cost, and realize large-scale production through a standard silicon-based process, and is rapidly developed in recent years. Currently, germanium-silicon photodetectors can be integrated in silicon-based optoelectronic integrated chips, however, integrating avalanche photodetectors into silicon-based optoelectronic integrated chips still presents major challenges.
In the related technology, the avalanche photodetector mainly adopts a laminated structure, needs a multilayer material growth process, is incompatible with the process of the current common silicon photowafer foundry, and seriously restricts the integration of the germanium-silicon avalanche photodetector and other functional elements.
Disclosure of Invention
The embodiment of the application provides a germanium-silicon avalanche photodetector and a manufacturing method thereof, and aims to solve the problem that the integration of the germanium-silicon avalanche photodetector and other functional elements is restricted due to incompatible processes in the related technology.
In a first aspect, a silicon germanium avalanche photodetector is provided, which includes:
an oxygen burying layer;
the bottom layer is arranged on the buried oxide layer and sequentially comprises an intrinsic bottom silicon region, a transition bottom silicon region, a multiplication region and an N-type heavily doped bottom silicon region, wherein the intrinsic bottom silicon region, the transition bottom silicon region, the multiplication region and the N-type heavily doped bottom silicon region are formed by doping monocrystalline silicon in multiple steps;
an intrinsic germanium layer disposed on the bottom layer, and a projection of the intrinsic germanium layer on the bottom layer covering a portion of intrinsic bottom silicon regions and a portion of transition bottom silicon regions;
the covering layer is covered on the intrinsic germanium layer and sequentially comprises a P-type heavily-doped covering layer silicon region, an intrinsic covering layer silicon region and a transition covering layer silicon region, wherein the P-type heavily-doped covering layer silicon region is formed by doping polysilicon in multiple steps, one end, far away from the intrinsic covering layer silicon region, of the P-type heavily-doped covering layer silicon region is in contact with the intrinsic bottom layer silicon region, and one end, far away from the intrinsic covering layer silicon region, of the transition covering layer silicon region is in contact with the transition bottom layer silicon;
a P electrode connected with the P-type heavily doped silicon region;
and the N electrode is connected with the N-type heavily doped bottom silicon region.
In some embodiments, the doping concentrations of the transition bottom silicon region and the transition cover silicon region are the same.
In some embodiments, the doping concentration.
In some embodiments, the intrinsic cap layer silicon region is entirely on top of the intrinsic germanium layer, and the P-type heavily doped cap layer silicon region and the transition cap layer silicon region are partially on top of the intrinsic germanium layer and partially on one side of the intrinsic germanium layer.
In some embodiments, the P-electrode is connected to the P-type heavily doped covered silicon region through a P-pole via.
In some embodiments, the N electrode is connected to the heavily N-doped bottom silicon region through an N-pole via.
In some embodiments, the intrinsic germanium layer is a trapezoidal structure.
In a second aspect, the present application further provides a method for manufacturing the above germanium-silicon avalanche photodetector, including the steps of:
manufacturing an intrinsic bottom silicon region, a transition bottom silicon region, a multiplication region and an N-type heavily doped bottom silicon region by multiple times of bottom doping;
making an intrinsic germanium layer by using epitaxial germanium;
depositing a cover silicon layer;
doping the covering layer silicon for multiple times, and manufacturing a P-type heavily-doped covering layer silicon region, an intrinsic covering layer silicon region and a transition covering layer silicon region;
and connecting the P electrode with the P-type heavily doped covering silicon region and connecting the N electrode with the N-type heavily doped bottom silicon region through a back-end metal through hole process.
The beneficial effect that technical scheme that this application provided brought includes: can be compatible with the existing process, is convenient for integrating with other functional elements, realizes multifunctional integration and can be produced in large scale.
The embodiment of the application provides a germanium-silicon avalanche photodetector, and because a laminated structure is not adopted, germanium does not need to be extended on polycrystalline silicon, and only germanium needs to be extended on the monocrystalline silicon, so that the germanium-silicon avalanche photodetector is compatible with the existing process, is convenient to integrate with other functional elements, realizes multifunctional integration, and can be produced in a large scale.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic view of a layered structure of a germanium-silicon avalanche photodetector provided in an embodiment of the present application;
fig. 2 is a schematic view of a partition structure of a germanium-silicon avalanche photodetector according to an embodiment of the present disclosure;
fig. 3 is a schematic position diagram of a charge transition region of a silicon germanium avalanche photodetector according to an embodiment of the present disclosure.
Fig. 4 is a flowchart of a method for manufacturing a germanium-silicon avalanche photodetector according to an embodiment of the present disclosure.
In the figure: 1. an intrinsic germanium layer; 2. a bottom layer; 3. a cover layer; 4. an oxygen burying layer; 5. an intrinsic bottom silicon region; 6. p-type heavily doped cover silicon region; 7. an intrinsic cap silicon region; 8. a transition cap silicon region; 9. a transition bottom silicon region; 10. a multiplication region; 11. an N-type heavily doped bottom silicon region; 12. a P-pole through hole; 13. a P electrode; 14. an N-pole through hole; 15. an N electrode; 16. a charge transition region.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The embodiment of the application provides a germanium-silicon avalanche photodetector, which does not adopt a laminated structure, can be compatible with the existing process, is convenient to integrate with other functional elements, realizes multifunctional integration, and can be produced in a large scale.
Referring to fig. 1 to 3, the sige avalanche photodetector according to the embodiment of the present application includes a buried oxide layer 4, a bottom layer 2, an intrinsic ge layer 1, a capping layer 3, a P electrode 13, and an N electrode 15.
The bottom layer 2 is arranged on the buried oxide layer 4, and the bottom layer 2 sequentially comprises an intrinsic bottom silicon region 5 formed by doping monocrystalline silicon in multiple steps, a transition bottom silicon region 9, a multiplication region 10 and an N-type heavily doped bottom silicon region 11.
An intrinsic germanium layer 1 is provided on the bottom layer 2, and a projection of the intrinsic germanium layer 1 on the bottom layer 2 covers a portion of intrinsic bottom layer silicon regions 5 and a portion of transition bottom layer silicon regions 9.
The covering layer 3 covers the intrinsic germanium layer 1, the covering layer 3 sequentially comprises a P-type heavily-doped covering layer silicon region 6 formed by multi-step doping of polysilicon, an intrinsic covering layer silicon region 7 and a transition covering layer silicon region 8, one end, far away from the intrinsic covering layer silicon region 7, of the P-type heavily-doped covering layer silicon region 6 is in contact with the intrinsic bottom layer silicon region 5, and one end, far away from the intrinsic covering layer silicon region 7, of the transition covering layer silicon region 8 is in contact with the transition bottom layer silicon region 9 to form a charge transition region 16.
The P electrode 13 is connected with the P type heavily doped covering layer silicon region 6; an N electrode 15 is connected to the heavily N-doped bottom silicon region 11.
In the embodiment of the present application, the charge transition region 16 is formed by contacting an end of the transition cover layer silicon region 8 far from the intrinsic cover layer silicon region 7 with the transition bottom layer silicon region 9, the P electrode, the N electrode, the charge transition region 16 are used for transferring charges, and the multiplication region 10 is used for amplifying photocurrent.
In the present embodiment, the P-type heavily doped cap layer silicon region 6 and the transition cap layer silicon region 8 are separated by the intrinsic cap layer silicon region 7.
The working principle of the germanium-silicon avalanche photodetector provided by the embodiment of the application is as follows: a high bias voltage is loaded on a P electrode 13, a low voltage is loaded on an N electrode 15, the P electrode 13 loads a voltage on an intrinsic germanium layer 1 through a P-type heavily doped cover silicon region 6, light is absorbed by the intrinsic germanium layer 1 to generate photo-generated carriers after being incident into the intrinsic germanium layer 1, amplified photocurrent is generated through a charge transition region 16 and a multiplication region 10 under the action of the voltage, and current flows to the N electrode 15 through an N-type heavily doped bottom silicon region 11 to form a current loop.
The germanium-silicon avalanche photodetector does not adopt a laminated structure, does not need to extend germanium on polycrystalline silicon, only needs to extend germanium on the monocrystalline silicon, can be compatible with the existing process, is convenient to integrate with other functional elements, realizes multifunctional integration, and can be produced in a large scale.
More specifically, in the embodiment of the present application, the doping concentrations of the transition bottom silicon region 9 and the transition cover silicon region 8 are the same. And the doping concentration of the transition bottom silicon region 9 is less than that of the P-type heavily doped cover silicon region 6.
Preferably, in the embodiment of the present application, the intrinsic germanium layer 1 has a trapezoid structure, the intrinsic cap layer silicon region 7 is entirely located on the top of the intrinsic germanium layer 1, and the P-type heavily doped cap layer silicon region 6 and the transition cap layer silicon region 8 are partially located on the top of the intrinsic germanium layer 1 and partially located on one side of the intrinsic germanium layer 1.
In the embodiment of the present application, since the P-type heavily doped cap layer silicon region 6 and the transition cap layer silicon region 8 are partially located on the top of the intrinsic germanium layer 1 and partially located on one side of the intrinsic germanium layer 1, a strong lateral electric field is formed on the side of the intrinsic germanium layer 1. After voltage is loaded on the electrode, light enters the intrinsic germanium layer 1, is absorbed by the intrinsic germanium layer 1 to generate photon-generated carriers, and is transmitted through the transition covering layer silicon region 8 to bombard the multiplication region 10 under the action of strong transverse voltage acceleration, and the P-type heavily-doped covering layer silicon region 6 and the transition covering layer silicon region 8 are covered on the side surface of the intrinsic germanium layer 1, so that a strong transverse electric field is formed more conveniently, the photon-generated carriers can be accelerated to bombard the multiplication region 10, and the performance of the detector is better.
Further, in the embodiment of the present application, the P electrode 13 is connected to the top of the P-type heavily doped silicon region 6.
Further, in the embodiment of the present application, the N electrode 15 is connected to the heavily N-doped bottom silicon region 11 through an N-pole via 14.
Referring to fig. 4, an embodiment of the present application further provides a method for manufacturing a germanium-silicon avalanche photodetector, including the steps of:
s1: through multiple times of bottom layer doping, an intrinsic bottom layer silicon region 5, a transition bottom layer silicon region 9, a multiplication region 10 and an N-type heavily doped bottom layer silicon region 11 are manufactured;
s2: epitaxial germanium is used for manufacturing an intrinsic germanium layer 1;
s3: depositing a cover silicon layer;
s4: doping the covering layer silicon for multiple times, and manufacturing a P-type heavily-doped covering layer silicon region 6, an intrinsic covering layer silicon region 7 and a transition covering layer silicon region 8;
s5: and connecting the P electrode 13 with the P-type heavily doped cover silicon region 6 and connecting the N electrode 15 with the N-type heavily doped bottom silicon region 11 through a back-end metal through hole process.
The method for manufacturing the germanium-silicon avalanche photodetector can manufacture the germanium-silicon avalanche photodetector, does not adopt a laminated structure, does not need to extend germanium on polycrystalline silicon, only needs to extend germanium on monocrystalline silicon, can be compatible with the existing process, is convenient to integrate with other functional elements, realizes multifunctional integration, and can be produced in a large scale.
In the description of the present application, it should be noted that the terms "upper", "lower", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Unless expressly stated or limited otherwise, the terms "mounted," "connected," and "connected" are intended to be inclusive and mean, for example, that they may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.
It is noted that, in the present application, relational terms such as "first" and "second", and the like, are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The above description is merely exemplary of the present application and is presented to enable those skilled in the art to understand and practice the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (8)
1. A silicon germanium avalanche photodetector, comprising:
an oxygen buried layer (4);
the bottom layer (2) is arranged on the buried oxide layer (4), and the bottom layer (2) sequentially comprises an intrinsic bottom silicon region (5) formed by doping monocrystalline silicon in multiple steps, a transition bottom silicon region (9), a multiplication region (10) and an N-type heavily doped bottom silicon region (11);
an intrinsic germanium layer (1) provided on the bottom layer (2), and a projection of the intrinsic germanium layer (1) on the bottom layer (2) covering a portion of intrinsic bottom silicon regions (5) and a portion of transition bottom silicon regions (9);
a covering layer (3) covering the intrinsic germanium layer (1), wherein the covering layer (3) sequentially comprises a P-type heavily-doped covering layer silicon region (6) formed by multi-step doping of polysilicon, an intrinsic covering layer silicon region (7) and a transition covering layer silicon region (8), one end of the P-type heavily-doped covering layer silicon region (6) far away from the intrinsic covering layer silicon region (7) is contacted with the intrinsic bottom layer silicon region (5), and one end of the transition covering layer silicon region (8) far away from the intrinsic covering layer silicon region (7) is contacted with the transition bottom layer silicon region (9) to form a charge transition region (16);
a P electrode (13) connected to the P-type heavily doped silicon region (6);
and the N electrode (15) is connected with the N-type heavily doped bottom silicon region (11).
2. The silicon germanium avalanche photodetector of claim 1, wherein: the doping concentration of the transition bottom silicon region (9) and the transition covering silicon region (8) is the same.
3. The silicon germanium avalanche photodetector of claim 2, wherein: the doping concentration of the transition bottom silicon region (9) is less than that of the P-type heavily-doped covering silicon region (6).
4. The silicon germanium avalanche photodetector of claim 1, wherein: the intrinsic cap layer silicon region (7) is located entirely on top of the intrinsic germanium layer (1), and the P-type heavily doped cap layer silicon region (6) and the transition cap layer silicon region (8) are both located partly on top of the intrinsic germanium layer (1) and partly on one side of the intrinsic germanium layer (1).
5. The silicon germanium avalanche photodetector of claim 1, wherein: the P electrode (13) is connected with the P-type heavily doped covered silicon region (6) through a P electrode through hole (12).
6. The silicon germanium avalanche photodetector of claim 1, wherein: the N electrode (15) is connected with the N-type heavily doped bottom silicon region (11) through an N pole through hole (14).
7. The silicon germanium avalanche photodetector of claim 1, wherein: the intrinsic germanium layer (1) is of a trapezoidal structure.
8. A method of fabricating a silicon germanium avalanche photodetector as claimed in any one of claims 1 to 7, including the steps of:
manufacturing an intrinsic bottom silicon region (5), a transition bottom silicon region (9), a multiplication region (10) and an N-type heavily doped bottom silicon region (11) by multiple times of bottom doping;
epitaxial germanium is used for manufacturing an intrinsic germanium layer (1);
depositing a cover silicon layer;
multiple times of covering layer silicon doping, and manufacturing a P-type heavily doped covering layer silicon region (6), an intrinsic covering layer silicon region (7) and a transition covering layer silicon region (8);
and connecting the P electrode (13) with the P-type heavily doped covering silicon region (6) and connecting the N electrode (15) with the N-type heavily doped bottom silicon region (11) through a back-end metal through hole process.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160233086A1 (en) * | 2015-02-09 | 2016-08-11 | United Microelectronics Corp. | Method for manufacturing germanium epitaxial layer and method for manufacturing device using the same |
| US20170338367A1 (en) * | 2014-03-10 | 2017-11-23 | Elenion Technologies, Llc | Lateral avalanche photodetector |
| CN107658363A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiN structures photodetector |
| CN109119500A (en) * | 2018-08-21 | 2019-01-01 | 南通赛勒光电科技有限公司 | A kind of transverse direction germanium detector structure and preparation method |
| US20190378949A1 (en) * | 2018-06-06 | 2019-12-12 | Fujitsu Limited | Optical semiconductor device and optical transceiver |
| CN111029422A (en) * | 2019-12-25 | 2020-04-17 | 武汉邮电科学研究院有限公司 | Photoelectric detector based on high-order mode |
| CN111048606A (en) * | 2019-12-25 | 2020-04-21 | 武汉邮电科学研究院有限公司 | Germanium-silicon photoelectric detector with high bandwidth and high responsivity |
-
2020
- 2020-07-08 CN CN202010652114.XA patent/CN111883608B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170338367A1 (en) * | 2014-03-10 | 2017-11-23 | Elenion Technologies, Llc | Lateral avalanche photodetector |
| US20160233086A1 (en) * | 2015-02-09 | 2016-08-11 | United Microelectronics Corp. | Method for manufacturing germanium epitaxial layer and method for manufacturing device using the same |
| CN107658363A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiN structures photodetector |
| US20190378949A1 (en) * | 2018-06-06 | 2019-12-12 | Fujitsu Limited | Optical semiconductor device and optical transceiver |
| CN109119500A (en) * | 2018-08-21 | 2019-01-01 | 南通赛勒光电科技有限公司 | A kind of transverse direction germanium detector structure and preparation method |
| CN111029422A (en) * | 2019-12-25 | 2020-04-17 | 武汉邮电科学研究院有限公司 | Photoelectric detector based on high-order mode |
| CN111048606A (en) * | 2019-12-25 | 2020-04-21 | 武汉邮电科学研究院有限公司 | Germanium-silicon photoelectric detector with high bandwidth and high responsivity |
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