CN111864327A - Microstrip thin film resistor and waveguide power synthesis network thereof - Google Patents
Microstrip thin film resistor and waveguide power synthesis network thereof Download PDFInfo
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- CN111864327A CN111864327A CN202010862956.8A CN202010862956A CN111864327A CN 111864327 A CN111864327 A CN 111864327A CN 202010862956 A CN202010862956 A CN 202010862956A CN 111864327 A CN111864327 A CN 111864327A
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- 239000010409 thin film Substances 0.000 title claims abstract description 48
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 33
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 33
- 239000000523 sample Substances 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000000919 ceramic Substances 0.000 claims abstract description 26
- 239000010453 quartz Substances 0.000 claims description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 28
- 230000007704 transition Effects 0.000 claims description 7
- 239000000463 material Substances 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000009466 transformation Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000002955 isolation Methods 0.000 description 9
- 230000009286 beneficial effect Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 229910052593 corundum Inorganic materials 0.000 description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/08—Coupling devices of the waveguide type for linking dissimilar lines or devices
- H01P5/10—Coupling devices of the waveguide type for linking dissimilar lines or devices for coupling balanced lines or devices with unbalanced lines or devices
- H01P5/107—Hollow-waveguide/strip-line transitions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
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Abstract
The invention provides a microstrip thin-film resistor and a waveguide power synthesis network thereof, which can solve the problems of power synthesis and power amplifier miniaturization; a microstrip thin film resistor comprises a ceramic substrate, a TaN resistor and a microstrip probe, wherein the TaN resistor and the microstrip probe are arranged on the ceramic substrate, the TaN resistor is tightly attached to the edge of the ceramic substrate, the TaN resistor is connected with the microstrip probe, and the microstrip probe extends to the opposite edge of the ceramic substrate; a waveguide power synthesis network comprises a power distribution network, a power amplifier module and a power synthesis network, wherein the power distribution network divides microwave signals into N paths of signals with the same amplitude and phase, each path of signal is amplified by the power amplifier module and then fed into the power synthesis network, and microstrip thin-film resistors are arranged at the joints of the power distribution network and the power synthesis network.
Description
Technical Field
The invention relates to the field of multi-path waveguide synthesis, in particular to a microstrip thin-film resistor and a waveguide power synthesis network thereof.
Background
With the development of microwave millimeter wave solid-state devices, the solid-state microwave millimeter wave high-power amplification technology draws people's attention. Because a single MMIC has limited output power capability and is difficult to meet the requirements of engineering application, the power synthesis technology is the most important and effective way for obtaining a high-power solid-state microwave millimeter wave source. The performance of the power distribution/synthesis technology directly affects the distribution and synthesis efficiency of the whole system energy. The most commonly used synthesis methods in the industry include microstrip synthesis, radial synthesis, and waveguide synthesis.
The microstrip composite network has a small size, but insertion loss becomes very large and power capacity is limited up to the millimeter wave band. The radial synthesis has inherent advantages in multi-path power synthesis, small insertion loss and large power capacity, but has very large volume and limitation in application to miniaturized devices. It is well known that the loss of a waveguide is very small, and the loss varies little with frequency and physical size. The waveguide synthesizer belongs to a plane structure, is beneficial to the installation and heat dissipation of a chip, and is very suitable for being used in a power amplifier with small volume.
Disclosure of Invention
The invention aims to provide a microstrip thin-film resistor and a waveguide power synthesis network thereof, which can be beneficial to the installation and heat dissipation of a chip, and the microstrip probe conversion between a microstrip line and a waveguide is designed to be beneficial to the connection with the chip; meanwhile, a micro-strip probe is additionally arranged at the center of the E-T section, a thin film resistor is integrated on the micro-strip probe, and when the power at the two ends of the E-T section is unbalanced, the micro-strip probe can couple out energy and is absorbed by the thin film resistor, so that the increase of the isolation degree of the two ports of the E-T section is facilitated.
The embodiment of the invention is realized by the following steps:
a microstrip film resistor comprises a ceramic substrate, a TaN resistor and a microstrip probe, wherein the TaN resistor and the microstrip probe are arranged on the ceramic substrate, the TaN resistor is tightly attached to the edge of the ceramic substrate, the TaN resistor is connected with the microstrip probe, and the microstrip probe extends to the edge of the ceramic substrate, which is opposite to the TaN resistor.
In a preferred embodiment of the present invention, the microstrip thin-film resistor is disposed at a center position of an E-T node of the microwave millimeter wave solid-state device.
In a preferred embodiment of the present invention, the ceramic substrate is a microstrip substrate made of a high thermal conductive material.
A waveguide power synthesis network comprises a power distribution network, a power amplifier module and a power synthesis network, wherein the power distribution network divides microwave signals into N paths of signals with the same amplitude and phase, each path of signal is amplified by the power amplifier module and then fed into the power synthesis network, and the microstrip thin-film resistors are arranged at the joints of the power distribution network and the power synthesis network.
In a preferred embodiment of the present invention, the power distribution network includes first-stage power dividers and second-stage power dividers, an output terminal of each first-stage power divider is connected to an input terminal of one second-stage power divider, and the microstrip thin-film resistor is disposed on the second-stage power dividers.
In a preferred embodiment of the present invention, a 90 ° corner is disposed on the common port of the primary power divider, a quartz probe is disposed at the input end of the primary power divider, and the signal is divided into two identical microwave signals through a first T-type matching transition conversion region.
In a preferred embodiment of the present invention, the input end of the secondary power divider is connected to the output end of the T-type matching transition conversion region of the primary power divider, and the signal is divided into 4 equal paths of microstrip signals through the E-T structure waveguide cavity, and each E-T structure waveguide cavity is provided with a microstrip thin film resistor.
In a preferred embodiment of the present invention, the two-stage power divider includes an E-T structure waveguide cavity, a quartz probe disposed on the E-T structure waveguide cavity, and a microstrip thin-film resistor, the microstrip thin-film resistor is disposed at a central position of the E-T structure waveguide cavity, and the quartz probe is disposed at two sides of the microstrip thin-film resistor.
In a preferred embodiment of the present invention, the quartz probe includes a quartz substrate, and an intra-cavity matching probe line, a high-resistance matching line, and a 50 ohm microstrip line integrated on the quartz substrate, where the 50 ohm microstrip line is disposed in close contact with an edge of the quartz substrate, and the 50 ohm microstrip line is sequentially connected to the high-resistance matching line and the intra-cavity matching probe line.
In a preferred embodiment of the present invention, the power combining network includes a secondary power combiner and a primary power combiner, an output terminal of each secondary power combiner is connected to an input terminal of the primary power combiner, and a microstrip thin film resistor is disposed on an E-T structure waveguide cavity of the secondary power combiner.
The embodiment of the invention has the beneficial effects that: the invention designs a microstrip film resistor, the microstrip probe carries out the conversion from waveguide to microstrip, the TaN resistor is added, the Al2O3 ceramic microstrip probe and the TaN resistor are integrally designed, the power bearing capacity of the resistor is enhanced, the isolation between ports is improved, and the microstrip film resistor is applied to a power distribution network and a power synthesis network, so that the microstrip film resistor has a high-frequency ultra-wide band and a Ka waveband full-segment coverage; based on the waveguide E-T structure, the power capacity is large; the power synthesizer is provided with a thin film resistor, and has the characteristics of high port isolation and the like.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.
Fig. 1 and fig. 2 are schematic diagrams of a microstrip thin film resistor structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a waveguide power combining network according to an embodiment of the present invention;
fig. 4 and 5 are schematic structural diagrams of a power distribution network according to an embodiment of the present invention;
fig. 6 and 7 are schematic diagrams of power combining network structures according to embodiments of the present invention;
fig. 8 is a schematic perspective view of a power distribution network according to an embodiment of the present invention;
fig. 9 is a schematic perspective view of a power combining network according to an embodiment of the present invention;
FIG. 10 is an electric field distribution diagram according to an embodiment of the present invention;
fig. 11 is a schematic diagram of combining end standing-wave ratio of the splitter/combiner according to the embodiment of the present invention;
FIG. 12 is a schematic diagram of the phase difference between the branches according to the embodiment of the present invention;
fig. 13 is a schematic diagram of the insertion loss of a splitter/combiner according to an embodiment of the present invention;
FIG. 14 is a schematic view of port isolation according to an embodiment of the present invention;
fig. 15 and 16 are schematic structural views of a quartz probe according to an embodiment of the present invention.
Icon: 100-microstrip thin film resistor; 110-a ceramic substrate; 120-TaN resistance; 130-a microstrip probe; 200-waveguide power combining network; 210-a power distribution network; 220-power amplifier module; 230-a power combining network; 211-one stage power divider; 212-a two-stage power splitter; 213-distributor chamber; 214-a cover plate; 215-set screw; 216-a housing; 217-waveguide port; 300-quartz probe; the rotating angle is 002-90 degrees; a 400-E-T structural waveguide cavity; 231-a two-stage power combiner; 232-one stage power combiner; 310-a quartz substrate; 320-matching probe lines in the cavity; 330-high impedance match line; 340-50 ohm microstrip lines.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or the orientations or positional relationships that the products of the present invention are conventionally placed in use, and are only used for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," "third," and the like are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.
Furthermore, the terms "horizontal", "vertical", "overhang" and the like do not imply that the components are required to be absolutely horizontal or overhang, but may be slightly inclined. For example, "horizontal" merely means that the direction is more horizontal than "vertical" and does not mean that the structure must be perfectly horizontal, but may be slightly inclined.
In the description of the present invention, it should also be noted that, unless otherwise explicitly specified or limited, the terms "disposed," "mounted," "connected," and "connected" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
First embodiment
Referring to fig. 1 and fig. 2, in order to solve the problems of power synthesis and miniaturization of power amplifier, the present embodiment provides a microstrip thin film resistor 100, which includes a ceramic substrate 110, a TaN resistor 120 disposed on the ceramic substrate 110, and a microstrip probe 130, wherein the TaN resistor 120 is tightly attached to an edge of the ceramic substrate 110, the TaN resistor 120 is connected to the microstrip probe 130, and the microstrip probe 130 extends to an opposite edge of the ceramic substrate 110. The microstrip thin-film resistor 100 is arranged at the center of the E-T node of the microwave millimeter wave solid-state device. The ceramic substrate 110 is a microstrip substrate made of a high thermal conductive material, in this embodiment, the ceramic substrate 110 is an Al2O3 ceramic substrate, and in other embodiments, the Al2O3 ceramic substrate is replaced by a microstrip substrate made of a BeO or other high thermal conductive materials, which can also achieve the object of the present invention.
Meanwhile, referring to fig. 3, the present embodiment further provides a waveguide power combining network 200 having the microstrip thin-film resistor 100, including a power distribution network 210, a power amplifier module 220 and a power combining network 230, where the power distribution network 210 divides a microwave signal into N paths of signals with the same amplitude and phase, each path of signal is amplified by the power amplifier module 220 and then fed into the power combining network 230, and the microstrip thin-film resistor 100 is disposed at a connection between the power distribution network 210 and the power combining network 230.
More specifically, referring to fig. 4 and 5 and fig. 8, the power distribution network 210 in the present embodiment includes first-stage power dividers 211 and second-stage power dividers 212, an output terminal of each first-stage power divider 211 is connected to an input terminal of one second-stage power divider 212, and the microstrip thin-film resistor 100 is disposed on the second-stage power dividers 212.
More specifically, a common port of the primary power divider 211 in this embodiment is provided with a 90 ° rotation angle 002, an input end of the primary power divider 211 is provided with a quartz probe 300, and the signal is divided into two identical microwave signals through a first T-shaped matching transition conversion region.
The power distribution network in this embodiment is provided with a distributor housing 216, and a distributor chamber 213 is provided in the distributor housing 216, and the distribution network makes a 90 ° turn at the common port for easier connection with the preceding stage. The signal is divided into two paths through the T-shaped waveguide cavity, then the signal is divided into 4 paths through the E-T waveguide cavity, the microstrip thin-film resistor 100 is not added in the first-stage E-T power distribution, a boss is added at an E-T port for better matching, the size of the boss is optimized, and the matching of the two ports is optimal. A cover plate 214 is also provided to integrate the power distribution network by means of fixing screws 215.
More specifically, in this embodiment, an input end of the secondary power divider 212 is connected to an output end of the T-type matching transition conversion region of the primary power divider 211, and the signal is divided into 4 equal paths of microstrip signals through the E-T structure waveguide cavity, and each E-T structure waveguide cavity is provided with a microstrip thin-film resistor 100. The secondary power divider 212 comprises an E-T structure waveguide cavity 400, a quartz probe 300 and a microstrip thin-film resistor 100, wherein the quartz probe 300 is arranged on the E-T structure waveguide cavity 400, the microstrip thin-film resistor 100 is arranged at the center of the E-T structure waveguide cavity 400, and the quartz probe 300 is positioned at two sides of the microstrip thin-film resistor 100.
In the second-stage E-T power distribution in this embodiment, not only the bosses are designed, but also the microstrip probe 130 and the film resistor are added, and the resistor can absorb the unbalanced power of the two ports, thereby enhancing the isolation of the two chips. The microstrip thin film resistor 100 is made of TaN, and in order to obtain better matching and good heat dissipation, the TaN is integrated on the Al2O3 ceramic substrate and is welded on the cavity through soldering tin.
More specifically, referring to fig. 15 and 16, the quartz probe 300 in the present embodiment includes a quartz substrate 310, and an intra-cavity matching probe line 320, a high-resistance matching line 330, and a 50-ohm microstrip line 340 integrated on the quartz substrate 310, where the 50-ohm microstrip line 340 is disposed close to the edge of the quartz substrate 310, and the 50-ohm microstrip line 340 is sequentially connected to the high-resistance matching line 330 and the intra-cavity matching probe line 320.
More specifically, referring to fig. 6, fig. 7 and fig. 9, the power combining network 230 in the present embodiment includes a secondary power combiner 231 and a primary power combiner 232, an output terminal of each secondary power combiner 231 is connected to an input terminal of the primary power combiner 232, and the microstrip thin-film resistor 100 is disposed on the waveguide cavity 400 of the E-T structure of the secondary power combiner 231.
In this embodiment, in order to better connect the waveguide and the chip, quartz probes are designed at the output end of the 4-way distribution network and the input port of the 4-way synthesis network, so that the waveguide is directly transited to the microstrip, and the quartz probe 300 uses the quartz substrate 310, thereby reducing the transition loss to the maximum extent and increasing the efficiency of power synthesis.
Microwave signals are fed in from an input port of the 4-path distribution network, and the 4-path power distributor divides the signals into 4 paths of signals with the same amplitude and phase, and the signals are amplified by 4 PA modules respectively. The amplified signals are fed into the 4-path power combining network 230 for power combining, and the combined signals are output from the waveguide port 217.
HFSS electromagnetic simulation conclusion
According to the power setting of 40W, as can be seen from the electric field distribution diagram in fig. 10, Emax is 1.4195 × 105V/m at the maximum field of the whole device, and is 3 × 106V/m lower than breakdown field intensity Eb, which indicates that there is no problem in the power bearing capability of the divider/combiner; as can be seen from fig. 11, the standing-wave ratio of the combining end of the distributor/combiner is less than 1.2:1, and the standing-wave ratio of the distributing end of the branch is less than 1.5: 1; it can be seen from fig. 12 that the phase difference between the branches is at most 3 degrees; as can be seen from fig. 13, the insertion loss of the splitter/combiner is very small, and the maximum amplitude between each path is about 0.2 dB; as can be seen from fig. 14, the port isolation is around 15 dB.
According to the index parameters, the four-way distributor/synthesizer works in the full-section Ka wave band and has good performance. The invention is based on the waveguide E-T structure, and the synthesizer is placed in a plane, thereby being beneficial to the installation and heat dissipation of a chip. And the microstrip probe conversion between the microstrip line and the waveguide is designed, so that the microstrip probe conversion is beneficial to being connected with a chip. A micro-strip probe is added in the center of the E-T node, and a thin film resistor is integrated on the micro-strip probe. When the power at the two ends of the E-T section is unbalanced, the micro-strip probe can be coupled out energy and absorbed by the film resistor, which is beneficial to increasing the isolation of the two ports of the E-T section.
In summary, the invention designs a microstrip thin film resistor 100, the microstrip probe 130 performs waveguide-to-microstrip conversion, the TaN resistor 120 is added, and the Al2O3 ceramic microstrip probe 130 and the TaN resistor 120 are integrally designed, so that the power bearing capacity of the resistor is enhanced, the isolation between ports is improved, and the microstrip thin film resistor is applied to the power distribution network 210 and the power synthesis network 230, so that the microstrip thin film resistor has a high-frequency ultra-wideband and a Ka-band full-segment coverage; based on the waveguide E-T structure, the power capacity is large; the power synthesizer is provided with a thin film resistor, and has the characteristics of high port isolation and the like.
This description describes examples of embodiments of the invention, and is not intended to illustrate and describe all possible forms of the invention. It should be understood that the embodiments described in this specification can be implemented in many alternative forms. The figures are not necessarily to scale; some features may be exaggerated or minimized to show details of particular components. Specific structural and functional details disclosed are not to be interpreted as limiting, but merely as a representative basis for teaching one skilled in the art to variously employ the present invention. It will be appreciated by persons skilled in the art that a plurality of features illustrated and described with reference to any one of the figures may be combined with features illustrated in one or more other figures to form embodiments which are not explicitly illustrated or described. The described combination of features provides a representative embodiment for a typical application. However, various combinations and modifications of the features consistent with the teachings of the present invention may be used as desired for particular applications or implementations.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The microstrip thin-film resistor is characterized by comprising a ceramic substrate, a TaN resistor and a microstrip probe, wherein the TaN resistor and the microstrip probe are arranged on the ceramic substrate, the TaN resistor is tightly attached to the edge of the ceramic substrate, the TaN resistor is connected with the microstrip probe, and the microstrip probe extends to the opposite edge of the ceramic substrate.
2. The microstrip thin-film resistor of claim 1, wherein the microstrip thin-film resistor is disposed at a center position of an E-T junction of a microwave millimeter wave solid state device.
3. The microstrip thin film resistor of claim 1, wherein the ceramic substrate is a microstrip substrate of high thermal conductivity material.
4. A waveguide power synthesis network comprises a power distribution network, a power amplifier module and a power synthesis network, wherein the power distribution network divides microwave signals into N paths of signals with the same amplitude and phase, and each path of signal is respectively amplified by the power amplifier module and then fed into the power synthesis network, and the microstrip thin-film resistor of any one of claims 1-3 is arranged at the joint of the power distribution network and the power synthesis network.
5. The waveguide power combining network of claim 4 wherein the power splitting network includes primary power splitters and secondary power splitters, an output of each of the primary power splitters is connected to an input of one of the secondary power splitters, and the microstrip thin film resistors are disposed on the secondary power splitters.
6. The waveguide power combining network of claim 5, wherein a 90 ° corner is disposed at a common port of the primary power splitter, a quartz probe is disposed at an input end of the primary power splitter, and the signal is divided into two identical microwave signals through a first T-shaped matching transition transformation region.
7. The waveguide power combining network of claim 5, wherein the input terminal of the secondary power divider is connected to the output terminal of the T-type matching transition region of the primary power divider, and the signal is divided into 4 equal paths of microstrip signals through the E-T structure waveguide cavity, and the microstrip thin film resistor is disposed on each E-T structure waveguide cavity.
8. The waveguide power combining network of claim 7, wherein the secondary power splitter comprises an E-T structure waveguide cavity, a quartz probe disposed on the E-T structure waveguide cavity, and a microstrip thin film resistor, the microstrip thin film resistor is disposed at a central position of the E-T structure waveguide cavity, and the quartz probe is disposed at two sides of the microstrip thin film resistor.
9. The waveguide power synthesis network of claim 8, wherein the quartz probe comprises a quartz substrate, and an intracavity matching probe line, a high-resistance matching line, and a 50-ohm microstrip line integrated on the quartz substrate, the 50-ohm microstrip line is disposed in close contact with the edge of the quartz substrate, and the 50-ohm microstrip line is sequentially connected to the high-resistance matching line and the intracavity matching probe line.
10. The waveguide power combining network of claim 4, wherein the power combining network comprises a secondary power combiner and a primary power combiner, an output terminal of each secondary power combiner is connected to an input terminal of the primary power combiner, and the microstrip thin film resistor is disposed on an E-T structure waveguide cavity of the secondary power combiner.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909469A (en) * | 2021-02-19 | 2021-06-04 | 中国科学院高能物理研究所 | Waveguide power distribution and synthesis method with arbitrary power ratio and distribution and synthesis device |
| CN113098413A (en) * | 2021-03-31 | 2021-07-09 | 绵阳天赫微波科技有限公司 | Power amplifier for 6-18GHz frequency band radio frequency signals and power amplification method thereof |
| CN114142203A (en) * | 2021-12-09 | 2022-03-04 | 清华大学 | Power synthesizer and equivalent circuit based on slot line-grounding coplanar waveguide structure |
| WO2022227598A1 (en) * | 2021-04-30 | 2022-11-03 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | High-isolation rectangular waveguide microstrip 0-degree phase difference broadband power divider |
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2020
- 2020-08-25 CN CN202010862956.8A patent/CN111864327A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112909469A (en) * | 2021-02-19 | 2021-06-04 | 中国科学院高能物理研究所 | Waveguide power distribution and synthesis method with arbitrary power ratio and distribution and synthesis device |
| CN113098413A (en) * | 2021-03-31 | 2021-07-09 | 绵阳天赫微波科技有限公司 | Power amplifier for 6-18GHz frequency band radio frequency signals and power amplification method thereof |
| WO2022227598A1 (en) * | 2021-04-30 | 2022-11-03 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | High-isolation rectangular waveguide microstrip 0-degree phase difference broadband power divider |
| CN114142203A (en) * | 2021-12-09 | 2022-03-04 | 清华大学 | Power synthesizer and equivalent circuit based on slot line-grounding coplanar waveguide structure |
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