CN111832733B - Quantum bit logic gate - Google Patents
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- CN111832733B CN111832733B CN202010635422.1A CN202010635422A CN111832733B CN 111832733 B CN111832733 B CN 111832733B CN 202010635422 A CN202010635422 A CN 202010635422A CN 111832733 B CN111832733 B CN 111832733B
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Abstract
The embodiment of the invention discloses a quantum bit logic gate, which is implemented by acting momentum recoil on any two adjacent ions in a two-dimensional ion array based on the two-dimensional ion array of which each ion is constrained by preset simple harmonic potential in a selected direction; the qubit logic gate realized based on the two-dimensional ion array is not limited in ion number; the operation speed of the double-quantum bit logic gate is ensured through momentum recoil.
Description
Technical Field
This document relates to, but is not limited to, quantum computer technology, and more particularly to a qubit logic gate.
Background
A quantum computer is a device that performs general-purpose computation using quantum logic, and its basic logic unit is composed of qubits that comply with the principles of quantum mechanics, and a large number of interacting qubits can physically implement a quantum computer. Compared with the traditional computer, on the specific problems, the quantum computer can greatly reduce the computation complexity and greatly reduce the time required for completing the computation. Quantum computers have a wide application prospect in the aspects of basic scientific research, quantum communication and cryptography, artificial intelligence, financial market simulation, climate change prediction and the like in the future, and are therefore concerned.
By utilizing the ion quantum bit array trapped in the ion trap, various high-fidelity quantum logic gate operations can be realized. The ion qubits have excellent performance in the aspects of coherence time, quantum logic gate operation fidelity, qubit control, interaction control, quantum error correction, and the like, and the current experimental techniques related to ion quantum computing have abundant accumulation and breakthrough, so that the ion quantum computer becomes one of the schemes for realizing the quantum computer.
The small-scale ionic quantum computers in the related art are mainly based on a one-dimensional ionic chain structure. Due to the limitations of experimental techniques, the one-dimensional ion chain structure is only suitable for the number of ion quantum bits below about 100. How to further improve the number of ion quantum bits and what kind of array configuration of ion quantum bits to realize expandable and large-scale ion quantum computation is a core technical problem for realizing quantum computers; the method has important influence on the complexity of a quantum computer system, the speed and the fidelity of the operation of a logic gate, the flexibility of quantum algorithm design, physical resources occupied by the whole system and the like. In addition, in order to increase the operation speed, a common dual qubit logic gate usually adopts an array configuration of ion qubits with a small ion spacing (about several microns). However, the small ion spacing presents a problem of large ion interactions, making the design of a dual-qubit logic gate more complex as the number of ions increases. How to design a qubit logic gate suitable for more ion qubit numbers becomes a problem to be solved.
Disclosure of Invention
The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.
The embodiment of the invention provides a quantum bit logic gate which can be realized on the premise of overcoming the limitation of ion number of the quantum logic gate.
The embodiment of the invention provides a quantum bit logic gate, which comprises: a two-dimensional ion array and a momentum recoil unit; wherein the content of the first and second substances,
each ion in the two-dimensional ion array is constrained by a preset simple harmonic potential in a selected direction;
the momentum recoil unit is set as follows: and (3) acting momentum recoil on any two adjacent ions in the two-dimensional ion array to realize the double-quantum bit logic gate.
In one illustrative example, the two-dimensional ion array comprises any one of:
a two-dimensional array of ions generated when each ion is independently bound to a micro-well;
a two-dimensional ion array consisting of more than two stacking chains; wherein each of the chain stacks comprises more than two ion arrangements.
In one illustrative example, the momentum recoil unit is configured to:
generating Raman transition of the ion qubit by a pair of pulsed lasers that do not propagate in the same direction to generate the momentum recoil;
simultaneously acting the generated momentum kick on any two neighboring ions in the two-dimensional ion array to perform the dual-quantum-bit logic gate between the two neighboring ions.
In an illustrative example, the intensity of the simple harmonic potential is determined by the ion spacing of the two-dimensional ion array and parameters of the pulsed laser.
In an illustrative example, the amount and mode of the momentum kick is determined by the ion spacing of the two-dimensional array of ions and parameters of the pulsed laser.
In an illustrative example, the qubit logic gate further comprises an electrostatic field unit configured to: the simple harmonic potential is generated.
In one illustrative example, the qubit logic gate further comprises a radio frequency electric field unit arranged to: the simple harmonic potential is generated by its own radio frequency electric field.
In an illustrative example, the spacing between ions in the two-dimensional ion array is a preset spacing;
wherein the Coulomb interaction between ions of the preset spacing is smaller than the effect of the simple harmonic potential.
In one illustrative example, the oscillation frequency of the simple harmonic potential is determined by the species of ions in the two-dimensional ion array, the inter-ion spacing, and the parameters and pulse sequence of the pulsed laser implementing the dual-qubit logic gate.
In one illustrative example, the qubit logic gates further comprise one or more single-qubit logic gates arranged to: and more than three qubit logic gates are constructed with the double qubit logic gate.
The embodiment of the invention is based on the two-dimensional ion array in which each ion is constrained by the preset simple harmonic potential in the selected direction, and the double-quantum bit logic gate is realized by acting momentum recoil on any two adjacent ions in the two-dimensional ion array; the quantum bit logic gate realized based on the two-dimensional ion array is not limited in ion number; the operation speed of the double-quantum bit logic gate is ensured through momentum recoil.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
FIG. 1 is a block diagram of a qubit logic gate in accordance with an embodiment of the present invention;
FIG. 2 is a schematic diagram of a two-dimensional ion array according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of another two-dimensional ion array according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of an exemplary momentum kick in accordance with the present invention;
FIG. 5 is a schematic diagram of the ion motion pattern of an exemplary qubit logic gate in phase space according to the present invention;
FIG. 6 is an exemplary graph of parameters for an exemplary qubit logic gate in accordance with the present invention;
FIG. 7 is a schematic error diagram of neighboring ions in an example of the present application;
FIG. 8 is a schematic diagram of an exemplary qubit logic gate of the present application;
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be noted that the embodiments and features of the embodiments in the present application may be arbitrarily combined with each other without conflict.
The steps illustrated in the flow charts of the figures may be performed in a computer system such as a set of computer-executable instructions. Also, while a logical order is shown in the flow diagrams, in some cases, the steps shown or described may be performed in an order different than here.
Fig. 1 is a block diagram of a qubit logic gate according to an embodiment of the present invention, as shown in fig. 1, including: a two-dimensional ion array and a momentum recoil unit; wherein the content of the first and second substances,
each ion in the two-dimensional ion array is constrained by a preset simple harmonic potential in a selected direction;
the momentum recoil unit is set as follows: and (3) acting momentum recoil on any two adjacent ions in the two-dimensional ion array to realize the double-quantum bit logic gate.
The embodiment of the invention is based on the two-dimensional ion array in which each ion is constrained by the preset simple harmonic potential in the selected direction, and the double-quantum bit logic gate is realized by acting momentum recoil on any two adjacent ions in the two-dimensional ion array; the qubit logic gate realized based on the two-dimensional ion array is not limited in ion number; the operation speed of the double-quantum bit logic gate is ensured through momentum recoil.
In an illustrative example, qubit logic gate control is typically performed using lasers of appropriate frequency and polarization for a given two-dimensional ion array configuration, including but not limited to: the control of the qubit logic gates is performed using a continuous laser or a pulsed laser (pulsed laser).
Momentum-kick (SDK) is a method for increasing the operation speed of a qubit logic gate; the SDK utilizes a beam splitter (beam splitter) and a reflector to divide each short pulse into a plurality of sub-pulses with preset time delay, so that the composite effect of the sub-pulses exerts momentum recoil depending on the states of the qubits while the states of the ions are turned over; the SDK is not limited by a Lamb-Dicke parameter area (Lamb-Dicke region), and can realize the rapid operation of the quantum bit logic gate.
In one illustrative example, a two-dimensional ion array of an embodiment of the invention comprises any one of:
a two-dimensional array of ions generated when each ion is independently bound to a micro-well;
a two-dimensional ion array consisting of more than two stacking chains; wherein each chain of stacks comprises more than two ion arrangements.
FIG. 2 is a schematic diagram of a two-dimensional ion array according to an embodiment of the invention, as shown in FIG. 2, each ion in the two-dimensional ion array is independently bound in a micro-well; fig. 3 is a schematic diagram of another two-dimensional ion array according to an embodiment of the present invention, and as shown in fig. 3, after a stacking chain is obtained by arranging more than two ions, the two-dimensional ion array is composed of more than two stacking chains. The two-dimensional ion array is only used for illustration and is not used to limit the implementation manner of the two-dimensional ion array in the embodiment of the invention. While square arrays (squares) are used as illustrations in fig. 2 and 3, embodiments of the present invention are not limited to square arrays, and two-dimensional ion arrays may be rectangular, triangular, etc., irregular two-dimensional arrays, and quasi two-dimensional arrays having undulations in spatial height.
In one illustrative example, a momentum recoil unit of an embodiment of the present invention is configured to:
enabling the ion qubits to generate Raman transition through a pair of pulse lasers which do not propagate along the same direction so as to generate momentum recoil;
simultaneously acting the generated momentum recoil on any two adjacent ions in the two-dimensional ion array;
according to the embodiment of the invention, the SDK simultaneously acts on any two adjacent ions in the two-dimensional ion array, so that the double-quantum bit logic gate between the two adjacent ions is realized.
In an illustrative example, the intensity of the harmonic potential of an embodiment of the present invention can be determined by one skilled in the art based on the relevant theory by the ion spacing of a two-dimensional ion array and the parameters of a pulsed laser.
In an illustrative example, the amount and pattern of momentum kick in embodiments of the present invention may be determined by one skilled in the art based on relevant theories by the ion spacing of the two-dimensional ion array and the parameters of the pulsed laser.
In an illustrative example, the qubit logic gate of embodiments of the present invention further comprises an electrostatic field unit configured to: generating a simple harmonic potential.
In an illustrative example, the qubit logic gate of embodiments of the present invention further comprises a radio frequency electric field unit configured to: the simple harmonic potential is generated by the radio frequency electric field of the self. Here, the simple harmonic potential generated by the rf electric field unit is actually an equivalent pseudo potential generated by the rf electric field of the rf electric field unit itself.
The simple harmonic potential generated by the electrostatic field unit or the radio frequency electric field unit is used for constraining each ion in the two-dimensional ion array in the selected direction;
in an exemplary embodiment, the distance between ions in the two-dimensional ion array is a preset distance;
wherein the coulomb interaction between ions of the preset spacing is smaller than the action of the simple harmonic potential.
In an illustrative example, the vibration frequency of the harmonic potential of an embodiment of the invention is determined by the ion species in the two-dimensional ion array, the inter-ion spacing, and the parameters and pulse sequence of the pulsed laser implementing the dual-qubit logic gate.
In an illustrative example, a qubit logic gate according to embodiments of the invention further comprises one or more single-qubit logic gates arranged to: and constructing with a double-quantum-bit logic gate to obtain more than three quantum-bit logic gates.
The following brief description of the embodiments of the present invention is provided by way of application examples, which are only used for illustrating the embodiments of the present invention and are not used for limiting the scope of the present invention.
Application examples
The application example provides a quantum bit logic gate which is constructed based on a two-dimensional ion array with larger ion distance, reduces the sensitivity of each ion to other ions, and improves the expandability of a system.
The present application example employs a two-dimensional ion array having an ion pitch of several tens to several hundreds of micrometers, for example, 30 to 300 micrometers; each ion is constrained to the same simple harmonic potential in a selected direction; the simple harmonic potential of the application example can be determined according to the precision of the qubit logic gate, and similar simple harmonic potential or approximate simple harmonic potential can be selected to restrain ions; generally, whether the simple harmonic potentials are similar can be determined according to the frequency of the simple harmonic potentials; when similar simple harmonic potential or approximate simple harmonic potential is adopted, only after the ions are constrained in the selected direction, the precision of the obtained qubit logic gate can meet the application requirements.
In this application example, the two-dimensional ion array includes any one of: a two-dimensional array of ions generated when each ion is independently bound to a micro-well; a two-dimensional ion array composed of more than two stacking chains; wherein each chain of stacks comprises more than two ion arrangements.
In this application example, ions may include, but are not limited to, ytterbium-171 ions (f) 171 Yb + ) Subsequent application examples take the relevant parameters of the ytterbium-171 ion as examples, and the example parameters may not necessarily be exactly equal to the respective values, but may approximate the respective values within acceptable error tolerances or design constraints.
This application illustrates that all ions in a two-dimensional ion array are constrained to the same simple harmonic potential in one selected direction; the simple harmonic potential can be generated by an applied electrostatic field, and can also be an equivalent pseudopotential (pseudo potential) generated by a Radio Frequency (Radio Frequency) electric field. Assuming that the selected direction is a direction z perpendicular to the ion plane, the vibration frequency of the simple harmonic potential is ω; the Coulomb interaction (Coulomb interaction) between ions of the present application example is weaker than the simple harmonic potential effect, i.e., ε = e 2 /4πε 0 mω 2 d 3 Is a value much less than 1, such as 0.001 or 0.0001; in the formula, e is the charge of the ion, m is the mass of the ion, ε 0 ≈8.85×10 -12 F/m is the vacuum dielectric constant, d is the ion spacing, and ω is the vibration frequency at simple harmonic potential. The two-dimensional ion array meeting the parameter setting has small influence of other ions on the ions, so that the expandability of the quantum computing system can be improved. The vibration frequency ω of the simple harmonic potential of this application example can be determined from the ion species, spacing, and pulse laser parameters and pulse sequence that subsequently implement a dual-qubit logic gate.
Based on the two-dimensional ion array, the application example can generate the SDK depending on the qubit state based on the pulsed laser (pulsed laser), and the SDK acts on any two neighboring ions to realize the fast operation of the dual-qubit logic gate between the neighboring ions. The present application example can determine the intensity, SDK number, and mode of the simple harmonic potential from given ion spacing and pulsed laser parameters.
In one illustrative example, more than two dual-qubit logic gates located at different positions on a two-dimensional ion array may be implemented in parallel; the execution time of the quantum computer can be shortened through parallel quantum bit logic gate operation. The application example qubit logic gate is not limited by ion number, and the complexity of the qubit logic gate does not grow as the ion number grows.
In an illustrative example, the present application example can use a pair of pulsed lasers (with appropriate pulse splitting and time delays) shown in fig. 4 that do not propagate in the same direction (counter-propagating in the figure) to induce Raman transitions of ion qubits to produce SDKs; SDK may be generated based on correlation principles; for the above-mentioned simple harmonic potential in the z-direction, the parameters can be designed such that the pulsed laser counter-propagating in the z-direction
The present application example fine-tunes ω such that
Is an integer; wherein the content of the first and second substances,
is the reduced Planck constant, and Δ k is the difference between the wave vectors of a pair of pulsed lasers, i.e., the magnitude of the momentum recoil of the SDK, ω rep Is the repetition rate of the pulsed laser. Setting the simple harmonic potential in the z direction to the fine-tuned value, and simultaneously applying M continuous SDKs in the + z direction and M continuous SDKs in the-z direction to two adjacent ions of the qubit logic gate, thereby realizing the double-qubit logic gate
Where i and j represent two target ions,
denotes the Pauli (Pauli) X operator on ion i; the time interval of every two adjacent SDKs is determined by the repetition frequency delta t =2 pi/omega of the pulse laser rep Determining; the quantum bit logic gate is a universal double-quantum bit logic gate, and can realize any multi-quantum bit logic gate by matching with a single-quantum bit logic gate. The application example can be matched with a single quantum bit logic gate on a two-dimensional ion array by the technical means familiar to the technical personnel in the field; at a pitch of 50 μm 171 Yb + Ion sum wavelength 355 nm, repetition frequency omega rep A pulsed laser with a frequency of =2 pi × 80 megahertz (MHz) as an example requires a simple harmonic potential ω =2 pi × 0.5444MHz in the z-direction and M =147 SDKs in the positive and negative directions, with a 3.675 microseconds realization time of the dual qubit logic gate. The pulse laser can also be along other directions in the application example, two beams of pulse laser can also have a certain included angle, and after the parameters are given, the quantum bit logic gate can be realized based on the correlation principle. In addition, the sequence of ω and SDKs is not limited to the above example, for example, the sequences of M + z SDKs, 2M-z SDKs, and M + z SDKs with an appropriate ω can also be used to implement the qubit logic gate of the present application example.
Fig. 5 is a schematic diagram of the ion motion pattern of an exemplary qubit logic gate in the phase space, where as shown in fig. 5, after applying M SDKs in the + z direction and M SDKs in the-z direction to two adjacent ions, the ion motion pattern has a trajectory in the phase space (phase space), where M =5 in the schematic diagram. Due to the large ion spacing, the effect of other ions to which no SDK is applied is negligible. Under the action of the SDK, if the initial two target ions are in the same qubit state 0 or 1, the centroid motion mode is excited, as shown by the dotted arrow and the corresponding numerical numbering sequence; if the first two target ions are at 0 and 1, respectively, then a relative motion pattern is excited, as indicated by the solid arrows and the corresponding numerical numbering sequence. The application example does not limit the SDK sequence, and it is only required that both motion modes return or approximately return to the starting point when the sequence is completed, and the difference between the areas (including symbols) enclosed by the two tracks reaches the designed value, that is, the qubit logic gate design meets the requirements.
FIG. 6 is a graph of an exemplary parameter of an exemplary qubit logic gate of the present invention, as shown in FIG. 6, in which the qubit logic gate is operated with ions of 171 Yb + Ion, the repetition frequency of the pulse laser is 2 pi multiplied by 80MHz; from the ion spacing d of the two-dimensional ion array, the required simple harmonic potential ω (solid line) and logic gate time (dashed line) can be determined, with qubit logic gate times of a few microseconds for ion spacings of tens to hundreds of microns. Fig. 7 is a schematic diagram of the error of neighboring ions in the present application, and as shown in fig. 7, for different ion spacings d, the qubit logic gate in the example of fig. 6 is applied to the error of the qubit logic gate when a pair of neighboring ions of a 10 × 10 two-dimensional ion array is applied. The application example can design the spacing of the two-dimensional ion array according to the precision requirement of the qubit logic gate. For quantum error correction, the present application example may set the error of the qubit logic gate to be less than 10 -3 This error requirement can be satisfied when the ion spacing in the two-dimensional ion array of this application is several tens to several hundreds of micrometers.
According to the application example of the double-quantum-bit logic gate, a plurality of double-quantum-bit logic gates far away from each other can be executed simultaneously in parallel, and the design of each double-quantum-bit logic gate does not need to be changed. Crosstalk error (cross talk error) performed in parallel by 1/n with spatial distance n d of two-qubit logic gates across the array 6 The regularity of (c) is reduced. Fig. 8 is a schematic diagram of an exemplary qubit logic gate of the application, and as shown in fig. 8, white dots represent data qubits (data qubits), and black dots represent measurement qubits (measurement qubits), and as an application in quantum error correction, both abstract qubits can be implemented by using the ionic qubits of the present invention; selecting a square sub-array with the interval of n on the square two-dimensional ion array, and selecting a double-quantum bit logic gate at a corresponding position in each square grid to form a two-dimensional sub-array with the interval of n; for example, a double quantum bit logic gate between two ions connected by a solid line in 4 squares in the figure, or between two ions connected by a dashed lineA dual quantum bit logic gate; in the figure, n =4 is selected as a schematic, the two-dimensional sub-array of the dual-quantum bit logic gate is executed in parallel, and the parallel crosstalk error can be smaller than the preset error upper limit by selecting proper n; for example: the parallel crosstalk error can be made smaller than the fault tolerance threshold of quantum error correction. In one illustrative example, the upper error limit may be 10 -3 I.e. average crosstalk error less than 10 -3 At this time, the requirement of quantum error correction fault tolerance threshold can be met.
The dual-quantum-bit logic gate in this application example depends on the actual selection of ion species, ion spacing, pulsed laser wavelength, repetition rate, spatial orientation, etc., and the selection of the spatial orientation of the laser depends on the structure of the electrodes used to generate the two-dimensional ion array. However, these parameters only provide the basis for implementing the qubit logic gate, and do not affect the implementation of the present application example. In the actual implementation process, the system which fails to meet the ideal parameters is only reduced in performance, efficiency and the like, but does not affect the characteristics of the application example. The application example adopts different kinds of two-dimensional ion arrays or quasi two-dimensional arrays with height changes, and the performance of the application example is not affected. Besides different types of pulsed lasers, the present application example can apply other methods of implementing SDK by using ultrafast frequency, amplitude, and phase modulation to implement the qubit logic gates in the present application example.
Implementations not depicted or described in the drawings are in a form known to those of ordinary skill in the art. In the present examples, "plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. Unless specifically stated or limited otherwise, the terms "mounted," "connected," "secured," and the like in the embodiments of the present invention are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the description herein, reference to a description of a "present embodiment," "an illustrative example," "an application example," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it should be understood that the above embodiments are exemplary and not to be construed as limiting the present invention, and that changes, modifications, substitutions and alterations can be made to the above embodiments by those skilled in the art within the scope of the present invention.
"one of ordinary skill in the art will appreciate that all or some of the steps of the methods, systems, functional modules/units in the devices disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. In a hardware implementation, the division between functional modules/units mentioned in the above description does not necessarily correspond to the division of physical components; for example, one physical component may have multiple functions, or one function or step may be performed by several physical components in cooperation. Some or all of the components may be implemented as software executed by a processor, such as a digital signal processor or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art. "
Claims (10)
1. A qubit logic gate comprising: a two-dimensional ion array and a momentum recoil unit; wherein the content of the first and second substances,
each ion in the two-dimensional ion array is constrained by a preset simple harmonic potential in a selected direction;
the momentum recoil unit is set as follows: and (3) acting momentum recoil on any two adjacent ions in the two-dimensional ion array to realize the double-quantum bit logic gate.
2. The qubit logic gate of claim 1, wherein the two-dimensional array of ions comprises any of:
a two-dimensional array of ions generated when each ion is independently bound to a micro-well;
a two-dimensional ion array composed of more than two stacking chains; wherein each of the chain stacks comprises more than two ion arrangements.
3. The qubit logic gate of claim 1, wherein the momentum kick unit is configured to:
generating Raman transition of the ion qubit by a pair of pulsed lasers that do not propagate in the same direction to generate the momentum recoil;
simultaneously acting the generated momentum kick on any two neighboring ions in the two-dimensional ion array to perform the dual-quantum-bit logic gate between the two neighboring ions.
4. The qubit logic gate of claim 3, wherein the intensity of the simple harmonic potential is determined by an ion spacing of the two-dimensional ion array and a parameter of the pulsed laser.
5. The qubit logic gate of claim 3 wherein the amount and mode of the momentum kick is determined by an ion spacing of the two-dimensional ion array and a parameter of the pulsed laser.
6. The qubit logic gate of any of claims 1 to 5, further comprising an electrostatic field unit configured to: the simple harmonic potential is generated.
7. The qubit logic gate of any of claims 1 to 5, further comprising a radio frequency electric field unit configured to: the simple harmonic potential is generated by its own radio frequency electric field.
8. The qubit logic gate of any of claims 1-5, wherein the spacing between ions in the two-dimensional ion array is a predetermined spacing;
wherein the Coulomb interaction between ions of the preset spacing is smaller than the effect of the simple harmonic potential.
9. The qubit logic gate of any of claims 3-5, wherein a vibration frequency of the simple harmonic potential is determined by a species of ions in the two-dimensional ion array, a spacing between ions, and a parameter and a pulse sequence of the pulsed laser implementing the dual qubit logic gate.
10. The qubit logic gate of any of claims 1-5, further comprising one or more single qubit logic gates arranged to: and more than three quantum bit logic gates are constructed with the double-quantum bit logic gate.
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