CN111830627A - Polarizing beam splitter and method of forming the same - Google Patents
Polarizing beam splitter and method of forming the same Download PDFInfo
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- CN111830627A CN111830627A CN201910328570.6A CN201910328570A CN111830627A CN 111830627 A CN111830627 A CN 111830627A CN 201910328570 A CN201910328570 A CN 201910328570A CN 111830627 A CN111830627 A CN 111830627A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/105—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type having optical polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/138—Integrated optical circuits characterised by the manufacturing method by using polymerisation
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Abstract
The present invention relates to the field of optical technology, and in particular, to a polarizing beam splitter and a method for forming the same. The polarization beam splitter includes: a substrate; the waveguide structure comprises a first waveguide, a slit waveguide and a second waveguide which are positioned on the surface of the substrate and extend along a first direction; the first waveguide, the slit waveguide and the second waveguide are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide is located between the first waveguide and the second waveguide; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate; the transverse magnetic polarized light in the light can be coupled from the first waveguide to the second waveguide through the slit waveguide. The invention realizes the separation of the TM polarization mode and the TE polarization mode in light, and has a plurality of potential applications in the aspects of future polarization multiplexing, sensing and the like.
Description
Technical Field
The present invention relates to the field of optical technology, and in particular, to a polarizing beam splitter and a method for forming the same.
Background
Polarization refers to the phenomenon in which the vibration vector of a transverse wave (perpendicular to the direction of propagation of the wave) deviates from certain directions. In long-distance optical communication, the optical fiber is used as a transmission channel of an optical signal, and has poor polarization maintaining capability, wherein the polarization state has high randomness. In silicon-based photoelectrons, because the propagation loss of the TE (Transverse Electric) polarization state is low, devices are generally designed based on the TE polarization state, and the difference between the effective refractive indexes of the TE and TM (Transverse Magnetic) polarization modes of a common silicon waveguide is large, so that the conversion between different polarization states cannot occur between the TE and TM (Transverse Magnetic) polarization modes, and the silicon-based photoelectrons have good polarization-maintaining capability. Therefore, when an optical signal enters the silicon optical chip from the optical fiber, the polarization state of the input signal should be controlled first.
Polarization control plays a very critical role in many application fields, such as communication, biosensing, quantum optics, etc., and high-efficiency and small-sized polarization control devices have very important application values in these fields.
Therefore, how to effectively separate the TE polarization state from the TM polarization state and expand the application field of polarized light is a technical problem to be solved urgently at present.
Disclosure of Invention
The invention provides a polarization beam splitter and a forming method thereof, which are used for solving the problems that the existing polarization beam splitter cannot be integrated on a chip, has larger size, complex structure, narrower working wavelength range and the like.
In order to solve the above problems, the present invention provides a polarization beam splitter comprising:
a substrate;
the waveguide structure comprises a first waveguide, a slit waveguide and a second waveguide which are positioned on the surface of the substrate and extend along a first direction; the first waveguide, the slit waveguide and the second waveguide are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide is located between the first waveguide and the second waveguide; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate;
the transverse magnetic polarized light in the light can be coupled from the first waveguide to the second waveguide through the slit waveguide.
Preferably, the first waveguide and the second waveguide are made of the same material, and the first waveguide and the second waveguide are symmetrically distributed on two opposite sides of the slit waveguide.
Preferably, the slit waveguide comprises a first material layer, a slit layer and a second material layer which are sequentially stacked along a third direction, and the refractive index of each of the first material layer and the second material layer is greater than that of the slit layer; the first material layer, the first waveguide and the second waveguide are arranged on the same layer; the third direction is a direction perpendicular to the substrate.
Preferably, in the first direction, the lengths of the first waveguide and the second waveguide are both greater than that of the slit waveguide.
Preferably, the first waveguide and the second waveguide are both silicon waveguides; the first material layer is a silicon material layer, the second material layer is a silicon nitride material layer, and the slit layer is made of silicon dioxide.
Preferably, the thickness of the first material layer is 200nm to 240nm, and the thickness of the second material layer is 280nm to 320 nm.
Preferably, the thickness of the slit layer is 30nm to 70 nm.
In order to solve the above problem, the present invention further provides a method for forming a polarization beam splitter, including the steps of:
providing a substrate;
forming a first waveguide, a slit waveguide and a second waveguide which all extend along a first direction on the surface of the substrate; the first waveguide, the slit waveguide and the second waveguide are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide is located between the first waveguide and the second waveguide; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate; the transverse magnetic polarized light in the light can be coupled from the first waveguide to the second waveguide through the slit waveguide.
Preferably, the first waveguide and the second waveguide are made of the same material, and the first waveguide and the second waveguide are symmetrically distributed on two opposite sides of the slit waveguide.
Preferably, the substrate is an SOI substrate; the specific steps of forming a first waveguide, a slit waveguide and a second waveguide which extend along a first direction and are parallel to each other on the surface of the substrate include:
etching the top silicon layer of the SOI substrate to form the first waveguide, the second waveguide and the first material layer;
depositing silicon dioxide on the surface of the first material layer to form the slit layer;
depositing silicon nitride on the surface of the slit layer, and forming the second material layer after photoetching and etching;
and depositing a silicon dioxide material on the surfaces of the first waveguide, the second waveguide and the slit waveguide to form an upper cladding layer.
According to the polarization beam splitter and the forming method thereof provided by the invention, the first waveguide, the slit waveguide and the second waveguide which are arranged in parallel are arranged, so that a TM polarization mode of light input into the first waveguide can be coupled to the second waveguide through the slit waveguide, and a TE polarization mode of light input into the first waveguide can be continuously output along the first waveguide, thereby realizing the separation of the TM polarization mode and the TE polarization mode in the light, realizing the on-chip polarization beam splitting function, being capable of separating to obtain a relatively pure polarization state and expanding the application field of polarized light. In addition, the polarization beam splitter provided by the invention has the advantages of simple structure, small size and wide working wavelength range, and has a plurality of potential applications in the aspects of polarization multiplexing, sensing and the like in the future.
Drawings
FIG. 1 is a schematic top view of a polarizing beamsplitter in accordance with an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a polarizing beam splitter in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a slot waveguide according to an embodiment of the present invention;
FIG. 4 shows Si slab waveguide and Si in accordance with an embodiment of the present invention3N4A mode effective refractive index profile within the/Si slot waveguide;
FIG. 5 is a flow chart of a method of forming a polarizing beam splitter in accordance with an embodiment of the present invention.
Detailed Description
The following describes in detail embodiments of the polarization beam splitter and the method for forming the same according to the present invention with reference to the accompanying drawings.
The present embodiment provides a polarization beam splitter, fig. 1 is a schematic top view structure diagram of the polarization beam splitter in the present embodiment, and fig. 2 is a schematic cross-sectional diagram of the polarization beam splitter in the present embodiment. As shown in fig. 1 and 2, the polarization beam splitter according to the present embodiment includes:
a substrate;
a first waveguide 10, a slit waveguide 11 and a second waveguide 12 which are located on the surface of the substrate and extend in a first direction; the first waveguide 10, the slit waveguide 11 and the second waveguide 12 are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide 11 is located between the first waveguide 10 and the second waveguide 12; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate;
transverse Magnetic (TM) polarized light of the light can be coupled from the first waveguide 10 to the second waveguide 12 via the slit waveguide 11.
Specifically, as shown in fig. 1, the first direction is an X-axis direction, and the second direction is a Y-axis direction. The first waveguide 10, the slit waveguide 11, and the second waveguide 12 all extend in the X-axis direction. The first waveguide 10 and the second waveguide 12 are both strip waveguides as an example.
Light enters the first waveguide 10 from the input end 101 of the first waveguide 10. The slit waveguide 11 and the first waveguide 10 achieve a phase matching condition for polarized light of a Transverse Magnetic (TM) mode in the light, and therefore have high coupling efficiency. Therefore, after the light is transmitted for a certain distance in the first waveguide 10, the TM polarized light in the light is coupled to the slit waveguide 11, then coupled to the second waveguide 12 through the slit waveguide 11, and finally output through the second output end 121 of the second waveguide 12. For the polarized light of the Transverse Electric (TE) mode in the light, the coupling efficiency of the TE polarized light between the slit waveguide 11 and the first waveguide 10 is low because there is a large difference between the effective refractive indexes of the slit waveguide 11 and the first waveguide 10. Therefore, the TE polarized light in the light will continue to be transmitted along the first waveguide 10 until being output from the first output end 102 of the first waveguide 10, so as to achieve the purpose of polarization separation, achieve the function of on-chip polarization beam splitting, separate and obtain a relatively pure polarization state, expand the application field of polarized light, and have many potential applications in the aspects of future polarization multiplexing and sensing.
In addition, the polarization beam splitter provided by the embodiment can be prepared by adopting an integration process, has a simple process and a small size, can realize a high extinction ratio in a wide wavelength range, and is easy to integrate with other semiconductor devices.
In order to simplify the manufacturing process of the polarization beam splitter and save the manufacturing cost, it is preferable that the first waveguide 10 and the second waveguide 12 are made of the same material, and the first waveguide 10 and the second waveguide 12 are symmetrically distributed on two opposite sides of the slit waveguide 11.
Specifically, a first distance S1 between the first waveguide 10 and the slit waveguide 11 and a second distance S2 between the second waveguide 12 and the slit waveguide 11 are equal. That is, the portion of the first waveguide 10 corresponding to the slit waveguide 11 and the portion of the second waveguide 12 corresponding to the slit waveguide 11 are symmetrically distributed on two opposite sides of the slit waveguide 11.
Fig. 3 is a schematic structural diagram of a slot waveguide according to an embodiment of the present invention. In order to simplify the structure of the slot waveguide, it is preferable that, as shown in fig. 2 and 3, the slot waveguide 11 includes a first material layer 111, a slot layer 112, and a second material layer 113 stacked in sequence along a third direction, and refractive indexes of the first material layer 111 and the second material layer 113 are both greater than that of the slot layer 112; the first material layer 111, the first waveguide 10 and the second waveguide 12 are disposed on the same layer; the third direction is a direction perpendicular to the substrate.
Specifically, the third direction is a Z-axis direction. The slit waveguide 11 includes the first material layer 111, the slit layer 112, and the second material layer 113 stacked in this order in the positive Z-axis direction. The refractive index of the first material layer 111 and the refractive index of the second material layer 113 are both greater than the refractive index of the slit layer 112. The specific materials of the first material layer 111, the second material layer 113 and the slit layer 112 can be selected by those skilled in the art according to actual needs.
For better separation of the TE polarized light and the TM polarized light, it is preferable that the lengths of the first waveguide 10 and the second waveguide 12 are larger than the slit waveguide 11 in the first direction.
Preferably, the first waveguide 10 and the second waveguide 12 are both silicon waveguides; the first material layer 111 is a silicon material layer, the second material layer 113 is a silicon nitride material layer, and the slit layer 112 is made of silicon dioxide.
Preferably, the thickness H1 of the first material layer 111 is 200nm to 240nm, and the thickness H3 of the second material layer 113 is 280nm to 320 nm. More preferably, the thickness H1 of the first material layer 111 is 220nm, and the thickness H3 of the second material layer 113 is 300 nm.
Preferably, the thickness of the slit layer 112 is 30nm to 70 nm. More preferably, the thickness of the slit layer 112 is 50 nm.
FIG. 4 shows Si slab waveguide and Si in accordance with an embodiment of the present invention3N4The effective refractive index of the mode in the Si slit waveguide is 220nm, and the thickness of the Si strip waveguide in FIG. 4 is3N4The thickness of the slit layer in the/Si slit waveguide is 50nm, and Si3N4The thickness of the layer, i.e. the second material layer 113, is 300 nm. In fig. 4, a first curve 411 represents a curve of the effective refractive index of the TE polarization mode with the width of the slit waveguide, a second curve 412 represents a curve of the effective refractive index of the TE polarization mode with the width of the stripe waveguide, a third curve 421 represents a curve of the effective refractive index of the TM polarization mode with the width of the slit waveguide, and a fourth curve 422 represents a curve of the effective refractive index of the TM polarization mode with the width of the stripe waveguide.
The widths of the first waveguide 10, the slit waveguide 11 and the second waveguide 12 can be selected by those skilled in the art according to actual needs. As shown in FIG. 4, Si is used3N4the/Si is used as the slit waveguide 12, so that the effective refractive index of the TM polarization mode can be more effectively improved, and the effective refractive index of the TE polarization mode is not substantially affected, so that the polarization state separation can be realized in a shorter distance, which is beneficial to further reducing the size of the polarization beam splitter.
Furthermore, the present embodiment further provides a method for forming a polarization beam splitter, and fig. 5 is a flowchart of a method for forming a polarization beam splitter in the present embodiment, and specific structures of a polarization beam splitter formed in the present embodiment can be seen in fig. 1 to fig. 3. As shown in fig. 1 to 3 and 5, the method for forming a polarization beam splitter according to this embodiment includes the following steps:
step S51, a substrate is provided. The substrate is preferably an SOI (Silicon On Insulator) substrate. The SOI substrate comprises bottom silicon, a buried oxide layer and top silicon which are sequentially stacked along the Z-axis direction.
Step S52, forming a first waveguide 10, a slit waveguide 11, and a second waveguide 12 on the surface of the substrate, all extending in a first direction; the first waveguide 10, the slit waveguide 11 and the second waveguide 12 are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide 11 is located between the first waveguide 10 and the second waveguide 12; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate; the transverse magnetic polarized light in the light can be coupled from the first waveguide 10 to the second waveguide 12 through the slit waveguide 11.
Preferably, the first waveguide 10 and the second waveguide 12 are made of the same material, and the first waveguide 10 and the second waveguide 12 are symmetrically distributed on two opposite sides of the slot waveguide 11.
Preferably, the specific steps of forming the first waveguide 10, the slit waveguide 11 and the second waveguide 12 on the substrate surface, which all extend along the first direction and are parallel to each other, include:
etching the top silicon layer of the SOI substrate to form the first waveguide 10, the second waveguide 12 and the first material layer 111;
depositing silicon dioxide on the surface of the first material layer 111 to form the slit layer 112;
depositing silicon nitride on the surface of the slit layer 112, and forming the second material layer 113 after photoetching and etching;
and depositing a silicon dioxide material on the surfaces of the first waveguide 10, the second waveguide 12 and the slit waveguide 11 to form an upper cladding layer.
Specifically, first, a first waveguide 10, a second waveguide 12 and a first material layer 111 which are arranged in parallel along the Y-axis direction and are spaced apart from each other are formed at the same time by performing photolithography and etching on the top silicon of the SOI substrate, wherein the first material layer 111 is located between the first waveguide 10 and the second waveguide 12. Then, a PECVD (Plasma enhanced chemical Vapor Deposition) process is used to deposit a silicon dioxide material on the surface of the first material layer 111, so as to form the slit layer 112. Next, a LPCVD (Low Pressure chemical vapor Deposition) process is used to deposit silicon nitride on the surface of the slit layer 112, and the second material layer 113 is formed after photolithography and etching. Finally, a silicon dioxide material is deposited on the surfaces of the first waveguide 10, the second waveguide 12, the second material layer 113 and the buried oxide layer by adopting a PECVD (plasma enhanced chemical vapor deposition) process to form an upper cladding layer.
In the polarization beam splitter and the forming method thereof according to the present embodiment, by providing the first waveguide, the slit waveguide, and the second waveguide arranged in parallel, the TM polarization mode of the light input into the first waveguide can be coupled to the second waveguide through the slit waveguide, and the TE polarization mode of the light input into the first waveguide continues to be output along the first waveguide, so that the separation of the TM polarization mode and the TE polarization mode in the light is achieved, the on-chip polarization beam splitting function is achieved, a relatively pure polarization state can be obtained through separation, and the application field of polarized light is expanded. In addition, the polarization beam splitter provided by the invention has the advantages of simple structure, small size and wide working wavelength range, and has a plurality of potential applications in the aspects of polarization multiplexing, sensing and the like in the future.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A polarizing beam splitter, comprising:
a substrate;
the waveguide structure comprises a first waveguide, a slit waveguide and a second waveguide which are positioned on the surface of the substrate and extend along a first direction;
the first waveguide, the slit waveguide and the second waveguide are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide is located between the first waveguide and the second waveguide; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate;
the transverse magnetic polarized light in the light can be coupled from the first waveguide to the second waveguide through the slit waveguide.
2. The polarization beam splitter of claim 1, wherein the first waveguide and the second waveguide are made of the same material, and the first waveguide and the second waveguide are symmetrically distributed on two opposite sides of the slit waveguide.
3. The polarization beam splitter of claim 1, wherein the slit waveguide comprises a first material layer, a slit layer and a second material layer stacked in sequence along a third direction, and the refractive index of each of the first material layer and the second material layer is greater than that of the slit layer; the first material layer, the first waveguide and the second waveguide are arranged on the same layer; the third direction is a direction perpendicular to the substrate.
4. The polarizing beam splitter of claim 3, wherein the first waveguide and the second waveguide each have a greater length than the slit waveguide in the first direction.
5. The polarizing beam splitter of claim 4, wherein the first waveguide and the second waveguide are both silicon waveguides; the first material layer is a silicon material layer, the second material layer is a silicon nitride material layer, and the slit layer is made of silicon dioxide.
6. The polarizing beam splitter of claim 5, wherein the first material layer has a thickness of 200nm to 240nm and the second material layer has a thickness of 280nm to 320 nm.
7. The polarizing beam splitter as claimed in claim 5, wherein the slit layer has a thickness of 30nm to 70 nm.
8. A method of forming a polarizing beam splitter, comprising the steps of:
providing a substrate;
forming a first waveguide, a slit waveguide and a second waveguide which all extend along a first direction on the surface of the substrate;
the first waveguide, the slit waveguide and the second waveguide are arranged in parallel in a second direction perpendicular to the first direction, and the slit waveguide is located between the first waveguide and the second waveguide; the first direction is a propagation direction of light rays, and the first direction and the second direction are both directions parallel to the substrate; the transverse magnetic polarized light in the light can be coupled from the first waveguide to the second waveguide through the slit waveguide.
9. The method as claimed in claim 8, wherein the first waveguide and the second waveguide are made of the same material, and the first waveguide and the second waveguide are symmetrically disposed on opposite sides of the slit waveguide.
10. The method of claim 9, wherein the substrate is an SOI substrate; the specific steps of forming a first waveguide, a slit waveguide and a second waveguide which extend along a first direction and are parallel to each other on the surface of the substrate include:
etching the top silicon layer of the SOI substrate to form the first waveguide, the second waveguide and the first material layer;
depositing silicon dioxide on the surface of the first material layer to form the slit layer;
depositing silicon nitride on the surface of the slit layer, and forming the second material layer after photoetching and etching;
and depositing a silicon dioxide material on the surfaces of the first waveguide, the second waveguide and the slit waveguide to form an upper cladding layer.
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| CN201910328570.6A CN111830627B (en) | 2019-04-23 | 2019-04-23 | Polarizing beam splitter and method of forming the same |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113253384A (en) * | 2021-06-28 | 2021-08-13 | 西安奇芯光电科技有限公司 | Polarization beam splitter structure with high extinction ratio |
| CN113568100A (en) * | 2021-07-12 | 2021-10-29 | 中国科学院上海微系统与信息技术研究所 | Suspended polarization beam splitter applied to intermediate infrared band |
| CN113740960A (en) * | 2021-07-27 | 2021-12-03 | 中国科学院微电子研究所 | Polarization beam splitter |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113253384A (en) * | 2021-06-28 | 2021-08-13 | 西安奇芯光电科技有限公司 | Polarization beam splitter structure with high extinction ratio |
| CN113568100A (en) * | 2021-07-12 | 2021-10-29 | 中国科学院上海微系统与信息技术研究所 | Suspended polarization beam splitter applied to intermediate infrared band |
| CN113740960A (en) * | 2021-07-27 | 2021-12-03 | 中国科学院微电子研究所 | Polarization beam splitter |
| CN113740960B (en) * | 2021-07-27 | 2023-11-03 | 中国科学院微电子研究所 | Polarization beam splitter |
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| CN111830627B (en) | 2023-07-07 |
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