CN111816540B - Ion implantation method - Google Patents
Ion implantation method Download PDFInfo
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- CN111816540B CN111816540B CN202010872445.4A CN202010872445A CN111816540B CN 111816540 B CN111816540 B CN 111816540B CN 202010872445 A CN202010872445 A CN 202010872445A CN 111816540 B CN111816540 B CN 111816540B
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- ion implantation
- emission current
- plasma
- spraying device
- ion
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Abstract
The invention provides an ion implantation method, which comprises the steps of obtaining the emission current of a plasma electron spraying device; then, comparing the emission current of the plasma electronic spraying device with a threshold value, and judging the state of the emission current of the plasma electronic spraying device according to the comparison result; then, adopting a plasma electronic spray device with abnormal emission current to perform an ion implantation process on a gasket so as to adjust the emission current of the plasma electronic spray device; and then, performing an ion implantation process on the semiconductor substrate through the adjusted plasma electronic spray device. Therefore, the stability of the emission current of the plasma electronic spray device is improved, and the problem of abnormal ion injection caused by poor stability of the plasma electronic spray device is solved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an ion implantation method.
Background
The ion implantation technology is an important component of modern semiconductor manufacturing technology, and mainly comprises the steps of introducing ionized impurity ions with controllable quantity into the surface of a semiconductor substrate through the acceleration of an electrostatic field by an electron beam of an ion implantation machine, so as to realize the doping of the semiconductor substrate, change the electrical property of the semiconductor substrate and finally form various semiconductor device structures. In an ion implantation machine, a plasma electron shower device is generally disposed at the end of an ion beam, and electrons with negative charges generated by the plasma electron shower device neutralize excessive positive ions on the surface of a semiconductor substrate, thereby preventing the semiconductor substrate from being damaged due to excessive positive charges, and avoiding charge effects. For the ion implantation process, the abnormal condition of the plasma electron spraying device may affect the quality of the semiconductor substrate and even the ion implantation machine, for example, may cause the ion implantation machine to be down. When the emission current of the plasma electronic spraying device is too high or too low, the stability of the plasma electronic spraying device is affected, so that the stability of the plasma electronic spraying device is poor, and the ion injection is abnormal.
Disclosure of Invention
The invention aims to provide an ion implantation method to solve the problem of abnormal ion implantation caused by poor stability of a plasma electronic spraying device.
To solve the above technical problem, the present invention provides an ion implantation method, comprising: providing an ion implantation machine, wherein the ion implantation machine comprises a plasma electronic spraying device;
acquiring emission current of the plasma electronic spraying device;
comparing the emission current of the plasma electronic spraying device with a threshold value, and judging the state of the emission current of the plasma electronic spraying device according to the comparison result;
adopting the plasma electronic spraying device with abnormal emission current to perform an ion implantation process on a gasket so as to adjust the emission current of the plasma electronic spraying device;
and performing an ion implantation process on the semiconductor substrate through the adjusted plasma electronic spray device.
Optionally, in the ion implantation method, the method for determining the state of the emission current of the plasma electronic spray device is to determine that the emission current of the plasma electronic spray device is in a stable state if the emission current of the plasma electronic spray device is within the threshold; if not, judging that the emission current of the plasma electronic spraying device is in the abnormal state, wherein the threshold value is 0.5-1.5 times of a preset current.
Optionally, in the ion implantation method, the ion implantation station further includes an ion source, and the ion source is configured to provide an ion beam.
Optionally, in the ion implantation method, the plasma electron spray device with an abnormal emission current is used, and the method of performing an ion implantation process on a gasket includes:
emitting electrons to the ion beam by using the plasma electron spraying device with abnormal emission current so as to fuse the electrons into the ion beam;
performing an ion implantation process on the spacer by the ion beam into which the electrons are merged.
Optionally, in the ion implantation method, the method of performing an ion implantation process on the spacer by the ion beam into which the electrons are merged includes:
comparing the emission current of the plasma electronic spraying device with the preset current, and adjusting the implantation energy and the dosage when the ion implantation process is performed on the gasket according to the comparison result; when the emission current of the plasma electronic spray device is greater than the preset current, the energy adopted by the ion implantation process is 40 Kev-60 Kev, and the dose is 5e11/cm 2 ～7e15/cm 2 ；
When the emission current of the plasma electronic spraying device is less than the preset current, the energy adopted by the ion implantation process is 30 Kev-50 Kev, and the dose is 4e11/cm 2 ～6e15/cm 2 。
Optionally, in the ion implantation method, when the emission current of the plasma electron spray device is smaller than the preset current, before the ion implantation process is performed on the gasket, a photoresist layer is formed on the surface of the gasket, and the ion implantation process is performed on the photoresist layer and the gasket; wherein the thickness of the photoresist layer is 8000-13000 angstroms.
Optionally, in the ion implantation method, when the ion implantation process is performed on the spacer, the ions used are arsenic ions.
Optionally, in the ion implantation method, argon gas is introduced to perform the ion implantation process on the gasket, and a gas flow rate of the argon gas is 0.5sccm to 1.5sccm.
Optionally, in the ion implantation method, when the ion implantation process is performed on the gasket, the arc starting voltage adopted by the plasma electronic spraying device is 20V to 40V, and the current is 0.5A to 1.5A.
Optionally, in the ion implantation method, the spacer is at least one of a silicon wafer, a germanium wafer and a silicon germanium wafer.
In the ion implantation method provided by the invention, the emission current of the plasma electron spraying device is obtained; comparing the emission current of the plasma electronic spraying device with a threshold value, and judging the state of the emission current of the plasma electronic spraying device according to the comparison result; adopting the plasma electronic spraying device with abnormal emission current to perform an ion implantation process on a gasket so as to adjust the emission current of the plasma electronic spraying device; and performing an ion implantation process on the semiconductor substrate through the adjusted plasma electronic spray device. That is, when the emission current of the plasma electronic spray device is in an abnormal state, the ion implantation process is performed on the gasket to increase or decrease the emission current of the plasma electronic spray device in the process of the ion implantation process, so that the emission current of the plasma electronic spray device is adjusted, the stability of the emission current of the plasma electronic spray device is improved, and the problem of abnormal ion implantation caused by poor stability of the plasma electronic spray device is solved.
Drawings
Fig. 1 is a schematic flow chart of an ion implantation method according to an embodiment of the present invention;
fig. 2 and fig. 3 are schematic structural diagrams of the ion implantation method according to the embodiment of the invention when step S4 is performed;
wherein the reference numerals are as follows:
100-a gasket; 110-photoresist layer.
Detailed Description
The ion implantation method proposed by the present invention is further described in detail below with reference to the accompanying drawings and specific examples. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is provided for the purpose of facilitating and clearly illustrating embodiments of the present invention.
Fig. 1 is a schematic flow chart of an ion implantation method according to an embodiment of the invention. As shown in fig. 1, the method of ion implantation includes:
step S1: providing an ion implantation machine, wherein the ion implantation machine comprises a plasma electronic spraying device;
step S2: acquiring emission current of the plasma electronic spraying device;
and step S3: comparing the emission current of the plasma electronic spraying device with a threshold value, and judging the state of the emission current of the plasma electronic spraying device according to the comparison result;
and step S4: adopting the plasma electronic spraying device with abnormal emission current to perform an ion implantation process on a gasket so as to adjust the emission current of the plasma electronic spraying device;
step S5: and performing an ion implantation process on the semiconductor substrate through the adjusted plasma electronic spray device.
In step S1, an ion implantation tool is provided, wherein the ion implantation tool includes a plasma electron spray device. The plasma electronic spraying device comprises a spraying cavity, and a filament is arranged in the spraying cavity. The plasma electronic spraying device is used for providing electrons. Specifically, after voltage is applied to the plasma electron spraying device, current can pass through the filament, a high temperature of several thousands of degrees is formed, and electrons can be emitted from the filament. In addition, the ion implantation machine further comprises an ion source, and the ion source is used for providing an ion beam. The plasma electron spraying device may be disposed below the ion beam and emit electrons to the ion beam in a direction perpendicular to a path of the ion beam, and the ion source and the plasma electron spraying device are both in the prior art and will not be described herein again.
In step S2, the emission current of the plasma electron shower apparatus is obtained. Specifically, the emission current of the plasma electronic spray device may be obtained by obtaining the ion implantation machine, for example, the emission current of the plasma electronic spray device may be obtained by an ion beam current detection device.
In step S3, the emission current of the plasma electronic spray device is compared with a threshold, and the state of the emission current of the plasma electronic spray device is determined according to the comparison result. Specifically, the method for determining the state of the emission current of the plasma electronic spraying device includes comparing the emission current of the plasma electronic spraying device with a threshold, and determining that the emission current of the plasma electronic spraying device is in a stable state if the emission current of the plasma electronic spraying device is within the threshold; if not, judging that the emission current of the plasma electronic spraying device is in the abnormal state, wherein the threshold value is 0.5-1.5 times of a preset current. Here, the predetermined current is a current that can qualify the ion implantation process, and the predetermined current may be selected according to the actual ion implantation process or specific parameters of the ion implantation apparatus, and may be specifically set according to the actual process parameters, for example, the predetermined current may be 20A, 50A, or 60A, etc.
Referring to fig. 2 and 3, fig. 2 and 3 are schematic structural diagrams of the step S4 according to the embodiment of the present invention. As shown in fig. 2, in step S4, an ion implantation process is performed on a spacer 100 by using the plasma electron shower device with an abnormal emission current, that is, when the emission current of the plasma electron shower device is in an abnormal state, the ion implantation process is performed on the spacer 100 to adjust the emission current of the plasma electron shower device.
Specifically, the method for performing the ion implantation process on the gasket 100 includes: emitting electrons to the ion beam by using the plasma electron spray device with abnormal emission current so as to be fused into the electrons in the ion beam, thereby neutralizing the positive charge of the ion beam; performing an ion implantation process on the spacer by the ion beam into which the electrons are merged. Wherein the method of performing an ion implantation process on the spacer by the ion beam into which the electrons are merged includes: comparing the emission current of the plasma electronic spraying device with the preset current, and adjusting the implantation energy and the dosage when the ion implantation process is performed on the gasket according to the comparison result; when the emission current of the plasma electronic spraying device is greater than the preset current, performing an ion implantation process on the gasketThe implantation energy is 40 Kev-60 Kev, and the dosage is 5e11/cm 2 ～7e15/cm 2 (ii) a The filament of the plasma electronic spraying device is rapidly consumed through the gasket 100, so that the resistance value of the filament of the plasma electronic spraying device can be increased, the emission current of the plasma electronic spraying device is reduced, the emission current of the plasma electronic spraying device is adjusted, and the stability of the emission current of the plasma electronic spraying device is improved.
When the emission current of the plasma electronic spraying device is smaller than the preset current, forming a photoresist layer 110 on the surface of the gasket 100, and then performing an ion implantation process on the photoresist layer 110 and the gasket 100; wherein, when the ion implantation process is executed, the adopted implantation energy is 30 Kev-50 Kev, and the implantation dosage is 4e11/cm 2 ～6e15/cm 2 In addition, the positive charges accumulated on the surface of the gasket can be attracted to overflow electrons in the plasma electronic spray device by the positive charges accumulated on the surface of the gasket by the photoresist layer 110 in the process of performing the ion implantation process on the gasket, so that the electron emission efficiency of the plasma electronic spray device can be improved, and the emission current of the plasma electronic spray device can be further improved.
The method for forming the photoresist layer 110 on the surface of the gasket 100 includes spin-coating a photoresist on the surface of the gasket 100, and baking, exposing and developing the photoresist layer 110 to form the photoresist layer 110. Preferably, the thickness of the photoresist layer 110 is 8000 a to 13000 a to improve the ion storing capability of the photoresist layer 110. The inventor researches and discovers that when the emission current of the plasma electronic spray device is smaller than the preset current, the resistance is increased due to the fact that the filament of the plasma electronic spray device is consumed too fast, and when the filament voltage is constant, the emission current of the plasma electronic spray device is reduced, and therefore the emission electron efficiency is reduced. Therefore, in this embodiment, by forming the photoresist layer 110 on the gasket 100, when the emission current of the plasma electron spray device is smaller than the preset current, in the process of performing ion implantation on the photoresist layer 110 and the gasket, the positive charge accumulation amount on the surface of the gasket 100 can be increased through the photoresist layer, so that a large amount of positive charges can be accumulated on the surface 100 of the gasket, and electrons of the plasma electron spray device can be effectively attracted to overflow, so that the electron emission efficiency of the plasma electron spray device can be improved, and the emission current of the plasma electron spray device can be further improved, that is, the magnitude of the emission current of the plasma electron spray device is adjusted.
Preferably, when the ion implantation process is performed on the gasket 100, the adopted ions are arsenic ions, argon gas is introduced to perform the ion implantation process on the gasket 100, and the high-energy ion bombardment of the ion implantation process is combined with the argon gas, so that the accumulation of positive charges on the surface of the gasket 100 can be further increased, the overflow of electrons of the plasma electron spray device can be further improved, and the emission efficiency can be improved.
Specifically, the gas flow rate of the argon gas may be 0.5 to 1.5sccm. In addition, when the spacer 100 is subjected to an ion implantation process, the plasma electron spray device may employ an arc striking (or arc striking chamber) voltage of 20V to 40V and a current of 0.5A to 1.5A. Here, the arc starting voltage may be an arc starting cavity voltage of a spray cavity of the plasma electronic spray device, and the arc starting cavity of the plasma electronic spray device is the prior art and is not described herein again. The gasket 100 may be at least one of a silicon wafer, a germanium wafer, and a silicon germanium wafer, and the embodiment is preferably a silicon wafer.
Further, when the emission current of the plasma electronic spraying device is judged to be in a stable state, the ion implantation process is carried out on the semiconductor substrate.
In step S5, an ion implantation process is performed on the semiconductor substrate by the adjusted plasma electron shower apparatus, that is, the ion implantation process is performed on the semiconductor substrate by the plasma electron shower apparatus whose emission current is in a stable state, or when the emission current of the plasma electron shower apparatus whose emission current is in an abnormal state is adjusted to be in the stable state, the ion implantation process is performed on the semiconductor substrate, that is, electrons are emitted to an ion beam by the adjusted plasma electron shower apparatus, and then the ion implantation process is performed on the semiconductor substrate by the ion beam. Since the emission current of the plasma electron spray device is adjusted by the spacer 100, the stability of the emission current of the plasma electron spray device is improved, and thus, when an ion implantation process is performed on the semiconductor substrate, the problem of abnormal ion implantation caused by poor stability of the plasma electron spray device can be avoided. Wherein the material of the semiconductor substrate may include a semiconductor material, an insulating material, a conductor material, or any combination thereof; the semiconductor substrate may have a single-layer structure or a multi-layer structure. For example, the semiconductor substrate may be a semiconductor material such as Si, siGe, siGeC, siC, gaAs, inAs, inP, and other III/V or II/VI compound semiconductors. And the semiconductor substrate is, for example, a layered semiconductor substrate of Si/SiGe, si/SiC, silicon-on-insulator (SOI), or silicon germanium-on-insulator. In other embodiments of the present invention, the material of the pad 100 and the semiconductor substrate may be the same.
In summary, in the ion implantation method provided by the present invention, the plasma electron shower device with an abnormal emission current is used to perform the ion implantation process on the spacer, so as to adjust the emission current of the plasma electron shower device, thereby improving the stability of the emission current of the plasma electron shower device, and further solving the problem of abnormal ion implantation caused by poor stability of the plasma electron shower device.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. An ion implantation method, comprising:
providing an ion implantation machine, wherein the ion implantation machine comprises a plasma electronic spraying device;
acquiring the emission current of the plasma electronic spraying device;
comparing the emission current of the plasma electronic spraying device with a threshold value, and judging the state of the emission current of the plasma electronic spraying device according to the comparison result;
adopting the plasma electronic spraying device with abnormal emission current to perform an ion implantation process on a gasket so as to adjust the emission current of the plasma electronic spraying device;
and performing an ion implantation process on the semiconductor substrate through the adjusted plasma electronic spray device.
2. The ion implantation method according to claim 1, wherein the state of the emission current of the plasma electron flood apparatus is determined by determining that the emission current of the plasma electron flood apparatus is in a steady state if the emission current of the plasma electron flood apparatus is within the threshold value; if not, judging that the emission current of the plasma electronic spraying device is in the abnormal state, wherein the threshold is 0.5-1.5 times of a preset current.
3. The method of claim 2, wherein the ion implanter further comprises an ion source configured to provide an ion beam.
4. The method of claim 3, wherein the plasma electron shower apparatus having an abnormal emission current is used to perform an ion implantation process on a spacer, the method comprising:
emitting electrons to the ion beam by using the plasma electron spraying device with abnormal emission current so as to fuse the electrons into the ion beam;
and performing an ion implantation process on the spacer by the ion beam into which the electrons are fused.
5. The method of claim 4, wherein the step of performing an ion implantation process on the spacer by the ion beam after the electrons are injected comprises:
comparing the emission current of the plasma electronic spraying device with the preset current, and adjusting the implantation energy and the dosage when the ion implantation process is performed on the gasket according to the comparison result; when the emission current of the plasma electronic spray device is greater than the preset current, the injection energy adopted by the ion injection process is 40 Kev-60 Kev, and the dose is 5e11/cm 2 ～7e15/cm 2 ；
When the emission current of the plasma electronic spray device is less than the preset current, the injection energy adopted by the ion injection process is 30 Kev-50 Kev, and the dose is 4e11/cm 2 ～6e15/cm 2 。
6. The ion implantation method of claim 5, wherein when the emission current of the plasma electron shower is less than the predetermined current, a photoresist layer is formed on the surface of the spacer before the ion implantation process is performed on the spacer, and the ion implantation process is performed on the photoresist layer and the spacer; wherein the thickness of the photoresist layer is 8000-13000 angstroms.
7. The method of claim 1, wherein the ions used in performing the ion implantation process on the spacer are arsenic ions.
8. The ion implantation method according to claim 1, wherein the ion implantation process is performed on the spacer by introducing argon gas having a gas flow rate of 0.5 seem to 1.5 seem.
9. The ion implantation method of claim 1, wherein the plasma electron spray device employs an arc starting voltage of 20V to 40V and a current of 0.5A to 1.5A when performing the ion implantation process on the spacer.
10. The method of claim 1, wherein the spacer is at least one of a silicon wafer, a germanium wafer, and a silicon germanium wafer.
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| JPH0545888U (en) * | 1991-11-18 | 1993-06-18 | 日新電機株式会社 | Beam profile interlock device |
| US5329129A (en) * | 1991-03-13 | 1994-07-12 | Mitsubishi Denki Kabushiki Kaisha | Electron shower apparatus including filament current control |
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| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| CN109243954A (en) * | 2018-10-12 | 2019-01-18 | 苏州晋宇达实业股份有限公司 | A kind of ion implantation apparatus |
| CN110416072A (en) * | 2019-07-30 | 2019-11-05 | 上海华力集成电路制造有限公司 | Improve the method for the online particle of silicon wafer in ion implantation technology |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7800083B2 (en) * | 2007-11-06 | 2010-09-21 | Axcelis Technologies, Inc. | Plasma electron flood for ion beam implanter |
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2020
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4825087A (en) * | 1987-05-13 | 1989-04-25 | Applied Materials, Inc. | System and methods for wafer charge reduction for ion implantation |
| US5329129A (en) * | 1991-03-13 | 1994-07-12 | Mitsubishi Denki Kabushiki Kaisha | Electron shower apparatus including filament current control |
| JPH0545888U (en) * | 1991-11-18 | 1993-06-18 | 日新電機株式会社 | Beam profile interlock device |
| JPH1012181A (en) * | 1996-06-20 | 1998-01-16 | Nissin Electric Co Ltd | Neutralization system |
| CN1241022A (en) * | 1998-06-19 | 2000-01-12 | 易通公司 | Method and apparatus for monitoring charge neutralization operation |
| CN102751154A (en) * | 2011-04-22 | 2012-10-24 | 上海凯世通半导体有限公司 | Real-time detection and control device for ion implantation |
| CN109243954A (en) * | 2018-10-12 | 2019-01-18 | 苏州晋宇达实业股份有限公司 | A kind of ion implantation apparatus |
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