CN111812481A - Method for evaluating reliability of semiconductor power device under cumulative ionizing radiation effect - Google Patents
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Abstract
A method for evaluating reliability of a semiconductor power device under the effect of accumulated ionizing radiation comprises the following steps: applying a preset bias voltage to the sample device; irradiating the sample device applied with the bias voltage until reaching a preset dose point; measuring electrical characteristic parameters of the sample device after the irradiation is applied; evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the electrical characteristic parameters of the sample device before and after the irradiation is applied. The evaluation method provided by the invention can conveniently and effectively evaluate the reliability of the semiconductor power device under the effect of accumulated ionizing radiation.
Description
Technical Field
The invention relates to the technical field of space radiation effect and reinforcement, in particular to a method for evaluating reliability of a semiconductor power device under an accumulative ionizing radiation effect.
Background
The power semiconductor device is a core element in a spacecraft power supply system, and a plurality of radiation environments exist in a space environment, such as cosmic rays, an exemplar radiation band, solar flares and the like, a large number of protons, high-energy electrons, heavy ions, gamma rays and the like exist in the radiation environments, so that semiconductor elements in a flight device operating in the space environment can be damaged, and even the function of the device can be disabled in severe cases. How to enable the power semiconductor device to normally work for a longer time, increase the reliability of the power semiconductor device and reduce the failure rate is a problem which needs to pay close attention to the improvement of the reliability of the power semiconductor device, however, the reliability of the power semiconductor device is not only related to the production process, but also has an inseparable relationship with the working environment of the power semiconductor device. In a space irradiation environment, the power semiconductor device can generate various irradiation effects, so that the performance of the power semiconductor device is degraded, and the reliability is reduced. Therefore, the reliability of the power semiconductor device in a radiation environment is researched, and the method has very important significance for guaranteeing the normal operation of the power semiconductor device in the aerospace field.
The performance of a semiconductor device is often closely related to a semiconductor material, and the silicon carbide (SiC) material has the advantages of wide forbidden band, high breakdown field strength, high thermal conductivity, high saturated electron drift rate and the like and can be used in the fields of high voltage, high frequency and high power as one representative of third-generation wide-forbidden-band semiconductor materials. Therefore, the SiC-based power semiconductor device has great prospect in the space irradiation environment.
Currently, the reliability problem of SiC devices in a radiation environment is the biggest challenge preventing their use in aerospace vehicles. The current research focus is to explore the reliability problem of the SiC device caused by the radiation effect, seek a reinforcing means and improve the reliability of the device.
Disclosure of Invention
Objects of the invention
The invention aims to provide a method for effectively evaluating the reliability of a semiconductor power device under the effect of accumulated ionizing radiation.
(II) technical scheme
In order to solve the above problems, the present invention provides a method for evaluating reliability of a semiconductor power device under an effect of accumulated ionizing radiation, comprising: applying a preset bias voltage to the sample device; irradiating the sample device applied with the bias voltage until reaching a preset dose point; measuring electrical characteristic parameters of the sample device after the irradiation is applied; analyzing the influence of accumulated ionizing radiation on the I-V characteristics of the SiC MOSFET device based on the electrical characteristic parameters of the sample device before and after irradiation, extracting the threshold drift and off-state leakage current of the sample device after irradiation under different bias voltage conditions, and evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation by combining the variation of the threshold drift and the off-state leakage current.
Further, the electrical characteristic parameters include: threshold voltage and off-state leakage current.
Further, before the applying the preset bias voltage to the sample device, the method further includes: obtaining an experimental sample; and selecting the experimental sample with normal electrical characteristic parameters from the experimental samples as a sample device.
Further, the applying a preset bias voltage to the sample device includes: a bias voltage was applied to the drain of the sample device and the source and gate were grounded.
Further, the applying a preset bias voltage to the sample device includes: a bias voltage was applied to the gate of the sample device and the drain and source were grounded.
Further, the applying a preset bias voltage to the sample device includes: all pins of the sample device were left floating.
Further, the irradiating the sample device after applying the bias voltage until the preset dose point comprises: use of60The Co-gamma radiation source irradiates the sample device after the bias voltage is applied until a preset dosage point, wherein the dosage rate during irradiation is 50rad (Si)/s, and the preset dosage point is 200krad (Si), 500krad (Si), 800krad (Si) and 1000krad (Si).
Further, after the irradiation of the sample device after the bias voltage is applied to the preset dose point, the method further includes: and (4) carrying out electrical test on the irradiated sample device, and removing the failed sample device.
Further, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation.
The method comprises the following steps: the reliability of the sample device under the effect of the accumulated ionizing radiation was evaluated based on the threshold voltage of the sample device after irradiation under different bias conditions. When the threshold voltage drift amount is greater than 0.4V, the device is considered unreliable.
Further, the calculation formula of the drift amount of the threshold voltage is as follows:
ΔVth＝ΔVot+ΔVit
wherein, VthIs the amount of shift of the threshold voltage, Δ VitAmount of shift of threshold voltage, Δ V, for interface state trapped chargesotThe amount of shift in threshold voltage is caused by oxide trap charges.
Further, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation.
The method comprises the following steps: and evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the off-state leakage current of the sample device after irradiation under different bias conditions. When off-state leakage current is larger than 1 x 10-4At the time of A, the first-time-series,the device is considered unreliable.
Further, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation. The method comprises the following steps:
analyzing the influence of the accumulated ionizing radiation effect on the I-V characteristic of the SiC MOSFET device, and evaluating the reliability of the device under the accumulated ionizing radiation effect by combining the influence of the threshold voltage drift and the variation of off-state leakage current on the reliability, failure rate and average life of the device.
(III) advantageous effects
The technical scheme of the invention has the following beneficial technical effects:
(1) in the invention patent, use60The Co-gamma radiation source was used to explore the effect of cumulative ionizing radiation effects on the reliability of SiC MOSFET power devices and, relative to other radiation sources,60the Co-gamma radiation source is simple to operate, no residue is left after radiation, an operator can directly contact the device, and the delivery cycle is shortened.
(2) In the patent of the invention, three different bias voltages are selected. The bias voltage is a major factor affecting the effect of radiation, and the yield, transport, and trapping of charge upon ionizing radiation are all related to the bias voltage. The irradiation of gamma rays is carried out under the condition of applying different bias voltages, and the influence of the accumulated ionizing radiation effect on the reliability of the SiC MOSFET power device is evaluated more accurately.
Drawings
FIG. 1 is a flow chart of a method for evaluating reliability of a semiconductor power device under cumulative ionizing radiation effects of the present invention;
FIG. 2 is a schematic diagram of the structure of a SiC MOSFET device of the present invention;
FIG. 3 is a schematic diagram of a process for inducing trapped charges in an oxide layer of a SiC MOSFET device by ionizing radiation;
FIG. 4(a) is a graph of the I-V characteristics of a SiC MOSFET device of the present invention before and after irradiation at gate bias;
FIG. 4(b) is a graph showing the transfer characteristic of the output characteristic of the SiC MOSFET device before and after irradiation under gate bias in accordance with the present invention;
FIG. 5 is a graph of threshold voltage of a SiC MOSFET device of the present invention as a function of cumulative dose;
FIG. 6 is a graph of off-state leakage current as a function of cumulative dose for a SiC MOSFET device of the present invention;
fig. 7 is a flow chart of operations for implementing the present invention to evaluate reliability of SiC MOSFET devices under cumulative irradiation effects.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
In the drawings a schematic view of a layer structure according to an embodiment of the invention is shown. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Fig. 1 is a flowchart of a method for evaluating reliability of a semiconductor power device under the effect of cumulative ionizing radiation according to the present invention.
As shown in fig. 1, the method for evaluating the performance of a semiconductor power device under the effect of accumulated ionizing radiation provided by the invention comprises the following steps: applying a preset bias voltage to the sample device; irradiating the sample device applied with the bias voltage until reaching a preset dose point; measuring electrical characteristic parameters of the sample device after the irradiation is applied; and evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the electrical characteristic parameters of the sample device before and after irradiation. The method for evaluating the performance of the semiconductor power device under the effect of the accumulated ionizing radiation carries out an irradiation degradation experiment and an electrical characteristic test on the sample device and extracts characteristic parameters, can obtain a failure mechanism and a failure rule of the device through physical analysis and statistical analysis of the parameters, and comprehensively evaluates the reliability of the sample device under the effect of the accumulated ionizing radiation. The reliability evaluation method can effectively evaluate the reliability of the semiconductor power device under the cumulative radiation effect.
In an exemplary embodiment, the electrical characteristic parameters include, but are not limited to: threshold voltage, off-state leakage current, breakdown voltage, on-state impedance, and I-V characteristic.
In an exemplary embodiment, before applying the preset bias voltage to the sample device, the method further includes: obtaining an experimental sample; and selecting the experimental sample with normal electrical characteristic parameters from the experimental samples as a sample device.
In an exemplary embodiment, the applying a preset bias voltage to the sample device includes: a bias voltage was applied to the drain of the sample device and the source and gate were grounded. Specifically, the magnitude of the operating voltage of an actual SiC power device may be simulated, with a bias voltage applied to the drain, e.g., 20V.
In an exemplary embodiment, the applying a preset bias voltage to the sample device includes: a bias voltage was applied to the gate of the sample device and the drain and source were grounded. Specifically, the magnitude of the operating voltage of an actual SiC power device may be simulated, with a bias voltage applied to the drain, e.g., 10V.
In an exemplary embodiment, the applying a preset bias voltage to the sample device includes: all pins of the sample device were left floating. I.e. no bias voltage was applied, as a control.
The performance evaluation method of the present invention will be further described below by taking a SiC MOSFET power device as an example.
FIG. 2 is a schematic diagram of a SiC MOSFET power device; fig. 3 is a schematic diagram illustrating the process of generating trap charges in a gate oxide layer during ionizing radiation.
As shown in fig. 2 and 3, in an exemplary embodiment, the irradiating the sample device after applying the bias voltage up to the preset dose point comprises: use of60And irradiating the sample device with the bias voltage applied by the Co-gamma radiation source until reaching a preset dosage point. By using60Co-gamma rays are used as a radiation source. When incident gamma rays act on the dielectric material of the SiC MOSFET power device (FIG. 2SiO2Where the energy of deposition is greater than the forbidden bandwidth of the material, electrons in the valence band in the oxide layer will transit to the conduction band, leaving a hole-generating electron-hole pair in the valence band that will move in the oxide layer under the influence of the electric field. Fig. 3 is a band diagram of a SiC MOSFET device at positive gate voltage, which graphically illustrates the electron-hole pair generation induced by gamma radiation in the oxide layer. Because the mobility of electrons in an oxide layer medium is far larger than that of holes, the electrons introduced by radiation can quickly move to a grid electrode and the holes can slowly move to SiC-SiO under the positive grid voltage2The interface moves, and in the process, part of holes are trapped by the traps to form oxide trap charges. In addition to the generation of trapped charges in the oxide layer, there is also a possibility of generating trapped charges in SiC-SiO2And new interface state trap charges are generated at the interface, and the threshold voltage, off-state leakage current and other electrical parameters of the SiC MOSFET power device can be changed under the combined action of the two kinds of trap charges.
In an exemplary embodiment, after the irradiating the sample device after applying the bias voltage to the preset dose point, the method further includes: and (4) carrying out electrical test on the irradiated sample device, and removing the failed sample device.
FIG. 4(a) is a graph of the I-V characteristics of a SiC MOSFET device of the present invention before and after irradiation at gate bias;
fig. 4(b) is a transfer characteristic curve of the output characteristic curve before and after irradiation of the SiC MOSFET device under gate voltage bias of the present invention.
Fig. 5 is a graph of threshold voltage versus cumulative dose for a SiC MOSFET power device of the present invention.
As shown in fig. 4 and 5, at a cumulative dose of 200krad (si), the I-V characteristic of the device begins to change, and this change is more pronounced as the dose increases, and the amount of drift of the sensitive parameter of fig. 5 and 6 is extracted from fig. 4. It should be noted that the I-V characteristic of the gate bias after irradiation changes most significantly compared to the drain bias and zero bias.
As shown in fig. 5, in the exemplary embodiment, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation. The method comprises the following steps: and evaluating the reliability of the sample device based on the drift amount of the threshold voltage of the SiCMOS MOSFET device after irradiation under different bias conditions. The threshold voltage shift of a SiC MOSFET device caused by the cumulative ionizing radiation effect can be represented by the following equation:
in the above formula,. DELTA.VotAnd Δ VitIt is believed that the oxide trap charge and interface state charge contribute to the threshold voltage shift,oxis the oxide layer dielectric constant. In the gate oxide layer, the density of oxide trap charges and the density of interface state charges generated by ionizing radiation are respectively:
Not＝Dg0F(E,ζ)Fttox
Nit＝KtoxD2/3
where Ft is an empirical parameter, F (E, ζ) is the hole generation rate associated with the electric field and the energy of the irradiated particles, and g0 is the concentration of electron-hole pairs generated per absorbed dose; k is a proportionality coefficient. The contributions of oxide trap charges and interface state charges to the threshold voltage of a MOSFET can be represented by the following equations, respectively:
fig. 6 is a graph of off-state leakage current as a function of cumulative dose for a SiC MOSFET power device of the present invention.
As shown in fig. 6, in the exemplary embodiment, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation.
The method comprises the following steps: and evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the off-state leakage current of the sample device after irradiation under different bias conditions. When off-state leakage current is larger than 1 x 10-4At a, the device is considered unreliable.
Referring to fig. 5 and 6, when the cumulative dose is 200krad (si) under gate bias conditions, the threshold voltage drift of the SiC MOSFET device reaches 0.4V, at which dose the device has begun to fail and the device loses reliability, according to the criteria previously described with respect to threshold voltage drift. When the accumulated dose is 500krad (Si) under the gate voltage bias condition, the off-state leakage current of the SiCMOSFET device is more than 1 x 10-4At this dose the device has begun to fail and the device loses reliability, according to the criteria described previously with respect to the amount of off-state leakage current drift. In summary, it is believed that the reliability of the SiC MOSFET device is lost when the cumulative dose reaches 200krad (si) when biased at gate voltage. While devices under leakage and zero bias conditions are still reliable at 1000krad (si).
Further, the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation. The method comprises the following steps:
analyzing the influence of accumulated ionizing radiation on the I-V characteristics of the SiC MOSFET device, and evaluating the reliability of the device under the effect of the accumulated ionizing radiation by combining the influence of the threshold voltage drift and the variation of off-state leakage current on the reliability, the failure rate and the average service life of the device. Wherein the reliability, the failure rate and the average life are respectively used as functions
Theta meterThe method comprises the following steps:
in the function, N is the number of devices verified by t ═ 0, and r (t) is the number of failures until t.
Fig. 7 is an operational flow diagram of a method of implementing the evaluation of semiconductor power device reliability under cumulative radiation effects of the present invention.
The invention realizes an operation flow chart of the evaluation method of the reliability of the semiconductor power device under the cumulative radiation effect;
(1) selecting experimental sample devices
(2) And numbering the selected devices in groups, testing the electrical parameters of the selected devices, and considering whether the electrical properties of the selected sample devices are normal or not.
(3) Fixing the device with normal electrical performance on the circuit board, applying bias lower than normal working voltage to the device through the clamp, and respectively selecting three bias conditions: a. the drain electrode is applied with 20V voltage, and the source end of the grid is grounded; b. the grid is applied with 10V voltage, and the source and drain ends are grounded; c. all pins are suspended. A multimeter is used to detect whether a short circuit condition occurs during power-up of the device.
(4) And (4) mounting the circuit board with the fixed device on an irradiation board, and setting an irradiation dose point.
(5) By using60The Co-gamma radiation source irradiates the devices on the irradiation plate to the required dose point.
(6) And performing electrical test on the irradiated device, and analyzing the drift of the threshold voltage and the failure mechanism and failure rule of the increase of off-state leakage current of the device under different accumulated doses.
(7) And evaluating the reliability, failure rate and average service life of the SiC MOSFET power device under the effect of accumulated ionizing radiation.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
Claims (15)
1. A method for evaluating reliability of a semiconductor power device under the effect of accumulated ionizing radiation, comprising:
applying a preset bias voltage to the sample device;
irradiating the sample device applied with the bias voltage until reaching a preset dose point;
measuring electrical characteristic parameters of the sample device after the irradiation is applied;
evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the electrical characteristic parameters of the sample device before and after the irradiation is applied.
2. The evaluation method according to claim 1, wherein the electrical characteristic parameter comprises: threshold voltage and/or off-state leakage current.
3. The method of claim 1, wherein prior to applying the predetermined bias voltage to the sample device, further comprising:
obtaining an experimental sample;
and selecting the experimental sample with normal electrical characteristic parameters from the experimental samples as a sample device.
4. The evaluation method of claim 1, wherein the applying a predetermined bias voltage to the sample device comprises:
a bias voltage was applied to the drain of the sample device and the source and gate were grounded.
5. The evaluation method of claim 1, wherein the applying a predetermined bias voltage to the sample device comprises:
a bias voltage was applied to the gate of the sample device and the drain and source were grounded.
6. The evaluation method of claim 1, wherein the applying a predetermined bias voltage to the sample device comprises:
all pins of the sample device were left floating.
7. The method of claim 1, wherein irradiating the sample device after applying the bias voltage up to a predetermined dose point comprises:
use of60The Co-gamma radiation source irradiates the sample device after the bias voltage is applied until a preset dosage point, wherein the dosage rate during irradiation is 50rad (Si)/s, and the preset dosage point is 200krad (Si), 500krad (Si), 800krad (Si) or 1000krad (Si).
8. The evaluation method according to claim 1, further comprising, after the irradiating the sample device after the applying of the bias voltage up to a preset dose point:
and (4) carrying out electrical test on the irradiated sample device, and removing the failed sample device.
9. The evaluation method according to claim 2, wherein the evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the electrical characteristic parameters of the sample device before and after the irradiation is applied comprises:
the reliability of the sample device under the effect of the accumulated ionizing radiation was evaluated based on the threshold voltage of the sample device after irradiation under different bias conditions.
10. The evaluation method according to claim 9,
the calculation formula of the drift amount of the threshold voltage is as follows:
ΔVth＝ΔVot+ΔVit
wherein, VthIs the amount of shift of the threshold voltage, Δ VitAmount of shift of threshold voltage, Δ V, for interface state trapped chargesotThe amount of shift in threshold voltage is caused by oxide trap charges.
11. The evaluation method according to claim 10,
when the amount of drift of the threshold voltage is greater than 0.4V, the sample device fails.
12. The evaluation method according to claim 2, wherein the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after the irradiation is applied,
the method comprises the following steps: and evaluating the reliability of the sample device under the effect of the accumulated ionizing radiation based on the off-state leakage current of the sample device after irradiation under different bias conditions.
13. The evaluation method according to claim 12,
the off-state leakage current calculation formula is as follows:
14. the method of claim 13, wherein when the off-state leakage current is greater than 1 x 10-4At a, the sample device failed.
15. The evaluation method according to claim 2, wherein the reliability of the sample device under the effect of the accumulated ionizing radiation is evaluated based on the electrical characteristic parameters of the sample device before and after irradiation. The method comprises the following steps:
and analyzing the influence of the accumulated ionizing radiation on the I-V characteristic of the sample device, and evaluating the reliability of the device under the effect of the accumulated ionizing radiation by combining the drift amount of the threshold voltage and the influence of the variation amount of the off-state leakage current on the reliability, the failure rate and the average life of the device.
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Cited By (3)
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| CN113945833A (en) * | 2021-09-29 | 2022-01-18 | 清华大学 | Method and platform for testing total ionizing radiation dose and electromagnetic radiation synergistic effect |
| CN114019249A (en) * | 2021-10-15 | 2022-02-08 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | NBTI test method and device under coupling of ionizing radiation |
| CN114460429A (en) * | 2021-11-23 | 2022-05-10 | 中国空间技术研究院 | Total dose effect test method for SiC MOSFET device |
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| CN113945833A (en) * | 2021-09-29 | 2022-01-18 | 清华大学 | Method and platform for testing total ionizing radiation dose and electromagnetic radiation synergistic effect |
| CN114019249A (en) * | 2021-10-15 | 2022-02-08 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | NBTI test method and device under coupling of ionizing radiation |
| CN114460429A (en) * | 2021-11-23 | 2022-05-10 | 中国空间技术研究院 | Total dose effect test method for SiC MOSFET device |
| WO2023093499A1 (en) * | 2021-11-23 | 2023-06-01 | 中国空间技术研究院 | Method for testing total dose effect of sic mosfet device |
| CN114460429B (en) * | 2021-11-23 | 2023-08-01 | 中国空间技术研究院 | Method for testing total dose effect of SiC MOSFET device |
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