CN111800190A - Signal intensity calibration method and device of optical module based on avalanche photodiode - Google Patents
Signal intensity calibration method and device of optical module based on avalanche photodiode Download PDFInfo
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Abstract
The disclosure relates to a signal intensity calibration method, device, terminal and computer readable storage medium for an avalanche photodiode-based optical module. The method comprises the steps of determining a dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current of the avalanche photodiode; measuring the operating current of the avalanche photodiode at the current temperature; and acquiring the net working current of the avalanche photodiode at the current temperature based on the working current of the avalanche photodiode at the current temperature and the dark current value at the current temperature, so that the net working current of the avalanche photodiode at the current temperature can be obtained by compensating the dark current of the avalanche photodiode at the current temperature in a calibration manner, and the method is simple and effective.
Description
Technical Field
The present disclosure relates to the field of optical communication technologies, and in particular, to a method and an apparatus for calibrating signal strength of an optical module based on an avalanche photodiode, a terminal, and a computer-readable storage medium.
Background
A large number of optical transceiver modules are typically used in modern fiber optic communication systems. In the optical transceiver module, the photodetector is typically an avalanche photodiode. However, due to the existence of dark current, when the avalanche photodiode is applied to an optical fiber communication system for high-sensitivity transceiving, such as long-range transmission or dense optical wave multiplexing signal transmission, an error exists in the signal intensity reported by the optical module.
Disclosure of Invention
In one aspect, the present disclosure provides a method for calibrating signal strength of an avalanche photodiode based optical module.
The signal intensity calibration method of the optical module based on the avalanche photodiode provided by the embodiment of the disclosure comprises the following steps:
determining a dark current value of the avalanche photodiode at the current temperature according to a corresponding relation between a preset temperature and the dark current of the avalanche photodiode;
measuring the operating current of the avalanche photodiode at the current temperature;
obtaining a net operating current of the avalanche photodiode at the present temperature based on the operating current of the avalanche photodiode at the present temperature and a dark current value at the present temperature.
In some embodiments, the correspondence includes: dark current values of the avalanche photodiode at a plurality of temperatures;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes:
and selecting a dark current value corresponding to the preset temperature with the minimum current temperature difference value as the dark current value of the current temperature according to the corresponding relation.
In some embodiments, the preset temperatures are temperature values of a plurality of arithmetic mean values.
In some embodiments, the difference between the predetermined temperatures is 5 degrees celsius.
In some embodiments, said determining a dark current value at a present temperature of said avalanche photodiode comprises:
measuring actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures;
obtaining a plurality of smooth curves formed by curve fitting of dark current values based on actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures;
based on the smooth curve, obtaining a fitting dark current value corresponding to a temperature value between two adjacent preset temperatures; and
and establishing the corresponding relation between the preset temperatures and the fitted dark current values.
In some embodiments, the correspondence includes:
the model and the preset temperature of the avalanche photodiode are in a mapping relation with the dark current of the avalanche photodiode of the corresponding model;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes:
and obtaining the dark current value of the avalanche photodiode of the type at the current temperature according to the type of the avalanche photodiode, the current temperature and the corresponding relation.
In some embodiments, further comprising:
obtaining the intensity of light received by the avalanche photodiode based on the net operating current.
In another aspect, the present disclosure provides a signal strength calibration apparatus for an optical module based on an avalanche photodiode.
The signal intensity calibration device of the optical module based on the avalanche photodiode provided by the embodiment of the disclosure comprises:
the first processing module is used for determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current of the avalanche photodiode;
a second processing module for measuring the operating current of the avalanche photodiode at the current temperature
And the third processing module is used for acquiring the net working current of the avalanche photodiode at the current temperature based on the acquired working current of the avalanche photodiode at the current temperature and the dark current value at the current temperature.
In yet another aspect, the present disclosure provides a terminal.
The terminal provided by the embodiment of the disclosure comprises: a processor and a memory for storing a computer program capable of running on the processor, wherein the processor is configured to execute the steps of the method for calibrating signal strength of an avalanche photodiode based optical module according to an aspect of the present disclosure when the computer program is run.
In yet another aspect, the present disclosure provides a computer-readable storage medium, on which a computer program is stored, wherein the computer program is executed by a processor to implement the steps of the signal strength calibration method for the avalanche photodiode based optical module provided in the embodiments of the present disclosure.
The technical scheme provided by the embodiment of the disclosure can have the following beneficial effects:
the method and the device for acquiring the net working current of the avalanche photodiode at the current temperature utilize the corresponding relation between the preset temperature and the dark current of the avalanche photodiode to determine the dark current value of the avalanche photodiode at the current temperature, the working current of the avalanche photodiode at the current temperature and the dark current value at the current temperature, and the net working current of the avalanche photodiode at the current temperature is acquired by compensating the dark current of the avalanche photodiode at the current temperature to calibrate and acquire the net working current of the avalanche photodiode at the current temperature, so that the accurate light signal intensity sensed by the avalanche photodiode is acquired. Meanwhile, the method is also beneficial to the optical communication system to adapt to the photocurrent monitoring of APD with violent dark current change along with temperature or other high non-linearity, and meets the reporting accuracy requirements of RSSI at different temperatures.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Figure 1 is a circuit diagram illustrating an avalanche photodiode based light module according to an exemplary embodiment.
Fig. 2 is a flowchart illustrating a signal strength calibration method for an avalanche photodiode based optical module according to an exemplary embodiment.
Fig. 3 is a schematic structural diagram illustrating a signal strength calibration apparatus of an avalanche photodiode based optical module according to an exemplary embodiment.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present invention. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the invention, as detailed in the appended claims.
Figure 1 is a circuit diagram illustrating an avalanche photodiode based light module according to an exemplary embodiment. Fig. 1 shows a bias circuit of a conventional APD (Avalanche photodiode) and an operating current collecting circuit flowing through the APD. When the circuit works, a relatively high reverse bias voltage is applied to the APD, and RSSI (Received Signal Strength Indication) reporting is carried out at the same time.
The avalanche photodiode is a p-n junction type photo detector diode which amplifies a photoelectric signal by utilizing an avalanche multiplication effect of carriers to improve detection sensitivity. The basic structure of the avalanche multiplication diode is a Read diode structure (namely an N + PIP + type structure, and a P + surface receives light) which is easy to generate the avalanche multiplication effect, and a larger reverse bias voltage is applied during working so that the avalanche multiplication state is achieved; its light absorption region is substantially identical to the multiplication region (the P region and the I region where high electric field exists).
The P-N junction is added with proper high reverse bias voltage, so that photogenerated carriers in a depletion layer are accelerated by a strong electric field to obtain enough high kinetic energy, the photogenerated carriers collide with crystal lattices to ionize to generate new electron-hole pairs, the carriers continuously cause new collision ionization, avalanche multiplication of the carriers is caused, and current gain is obtained. Meanwhile, the P-N junction has a contact potential difference in a depletion region when the P-N junction is not illuminated under a thermal equilibrium state. When a proper reverse voltage is applied to the P-N junction, the depletion region of the P-N junction will be widened, and a reverse leakage current, i.e., a dark current of the photodiode, will be generated in the circuit. In a particular application, the magnitude of the dark current of a photodiode is temperature dependent, in addition to the intrinsic transition of electrons from the valence band to the conduction band in the silicon substrate of the depletion layer, the diffusion of minority carriers in neutrals, and the Si — SiO2 interface. At different temperatures, the dark current of an APD is a variable. Generally, as temperature increases, the larger the APD dark current.
The present disclosure provides a signal intensity calibration method for an avalanche photodiode based optical module. Fig. 2 is a flowchart illustrating a signal strength calibration method for an avalanche photodiode based optical module according to an exemplary embodiment. As shown in fig. 2, the method includes:
and step 22, obtaining a net working current of the avalanche photodiode at the current temperature based on the working current of the avalanche photodiode at the current temperature and the dark current value at the current temperature, wherein the net working current is used for representing the signal intensity of the optical signal induced by the avalanche photodiode.
In the present exemplary embodiment, the preset temperature may be a temperature value when a plurality of pre-stored optical modules operate; the correspondence between the preset temperature and the dark current of the avalanche photodiode may include: the plurality of preset temperatures correspond to a plurality of dark currents acquired in advance, and form a one-to-one correspondence relationship. For example, the preset temperature is-40 ℃, which corresponds to a dark current of 67 μ A at the temperature of APD; the preset temperature is-30 ℃, and the dark current of the corresponding APD at the temperature is 62 muA; the preset temperature is-20 ℃, and the dark current of the corresponding APD at the temperature is 59 muA; the preset temperature is-10 ℃, and the dark current of the corresponding APD at the preset temperature is 58 muA and the like. And determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current.
When the working current of the avalanche photodiode at the current temperature is measured, the working current of the avalanche photodiode at the current temperature can be obtained through the mirror image of the current source.
And subtracting the dark current value at the current temperature from the working current of the avalanche photodiode at the current temperature to obtain the net working current of the avalanche photodiode at the current temperature. The net operating current obtained can be used to characterize the signal strength of the optical signal induced by the avalanche photodiode.
Therefore, the net working current of the avalanche photodiode at the current temperature is calibrated and obtained by compensating the dark current of the avalanche photodiode at the current temperature, so that the more accurate optical signal intensity sensed by the avalanche photodiode is obtained. Meanwhile, the method is also beneficial to the optical communication system to adapt to the photocurrent monitoring of APD with violent dark current change along with temperature or other high non-linearity, and meets the reporting accuracy requirements of RSSI at different temperatures.
In some embodiments, the correspondence includes: dark current values of the avalanche photodiode at a plurality of temperatures;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes: and selecting a dark current value corresponding to the preset temperature with the minimum current temperature difference value as the dark current value of the current temperature according to the corresponding relation.
In the present exemplary embodiment, when determining the dark current value of the APD at the present temperature, the dark current value corresponding to the preset temperature at which the difference between the present temperatures is minimum is selected as the dark current value of the present temperature for the purpose of accurate calibration. Here, the difference between the preset temperature and the current temperature refers to an absolute value of a difference between the preset temperature and the current temperature. For example, the preset temperature is-40 ℃, which corresponds to a dark current of 67 μ A at the temperature of APD; the preset temperature is-30 ℃, and the dark current of the corresponding APD at the temperature is 62 muA; the preset temperature is-20 ℃, and the dark current of the corresponding APD at the temperature is 59 muA; the preset temperature is-10 ℃, and the dark current of the corresponding APD at the preset temperature is 58 muA and the like. And if the current temperature is-22 ℃, selecting the corresponding dark current 59 muA when the preset temperature is-20 ℃ as the dark current value of the current temperature. In some embodiments, the preset temperatures are temperature values of a plurality of arithmetic mean values. In the present exemplary embodiment, the plurality of preset temperatures may be a plurality of temperature values arranged in an equal difference. For example, the predetermined temperature may be-40 ℃, -30 ℃, -20 ℃, -10 ℃ and the like.
In some embodiments, the correspondence includes: and a plurality of discrete mapping relations corresponding to the preset temperature and the dark current. The preset temperature may include a plurality of temperature points, and the dark current may include a plurality of dark current values respectively corresponding to the plurality of temperature points one to one. The temperature point and the dark current value corresponding thereto are both discrete data.
In some embodiments, the difference between the predetermined temperatures is 5 degrees celsius. For example, the predetermined temperature may be-40 ℃, -35 ℃, -30 ℃, -25 ℃, -20 ℃, -15 ℃, -10 ℃ or the like. In specific application, in order to improve the calibration accuracy, the preset temperature can be further refined, and the refined dark current is obtained. For example, dark current values corresponding to a plurality of preset temperatures with a difference of 2 degrees celsius are obtained.
In some embodiments, said determining a dark current value at a present temperature of said avalanche photodiode comprises: measuring actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures; obtaining a plurality of smooth curves formed by curve fitting of dark current values based on actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures; based on the smooth curve, obtaining a fitting dark current value corresponding to a temperature value between two adjacent preset temperatures; and establishing the corresponding relation between the preset temperatures and the fitting dark current value.
In the exemplary embodiment, when the obtained variation amount of the dark current of the APD at the preset temperature is not severe, a dark current value corresponding to the preset temperature is not obtained between the preset temperatures in a curve fitting manner, so that the workload of measuring the dark current value by a worker can be reduced, and the dark current value corresponding to the refined preset temperature can be quickly obtained.
In some embodiments, the correspondence includes: and forming a fitted smooth curve by the preset temperature and the dark current, wherein the smooth curve is a continuous function. At this time, the dark current value at the current temperature of the APD can be directly obtained only by substituting the current temperature as a dependent variable into the function, the method is simple and convenient to operate, the accuracy is higher compared with the dark current value obtained in the discrete corresponding relation, and more accurate net working current is convenient to further obtain, so that the optical communication system can meet the reporting accuracy requirements of the RSSI at different temperatures. In some embodiments, the correspondence includes: the model and the preset temperature of the avalanche photodiode are in a mapping relation with the dark current of the avalanche photodiode of the corresponding model; the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes: and obtaining the dark current value of the avalanche photodiode of the type at the current temperature according to the type of the avalanche photodiode, the current temperature and the corresponding relation.
In the present exemplary embodiment, the mapping relationship between the model and the preset temperature of the avalanche photodiode and the dark current of the corresponding avalanche photodiode is the corresponding relationship between a set of preset temperature and dark current corresponding to one type of APD, and the corresponding relationship between the preset temperature and the dark current corresponding to different types of APDs is different; the preset temperatures in the corresponding relationship between each set of preset temperatures and the dark current may be the same or different.
In the present exemplary embodiment, when acquiring the corresponding relationship between the preset temperature and the dark current corresponding to one type of APD, the dark current values of a plurality of APDs of the same type at a plurality of preset temperatures may be measured.
And adopting the average current value of a plurality of dark current values at the same preset temperature as the dark current value of the APD of the model at the preset temperature. Therefore, the corresponding relation between the preset temperature and the dark current corresponding to a plurality of APDs of different models can be obtained. Meanwhile, when the optical modules are produced in batches, the corresponding relation between the preset temperature and the dark current corresponding to the APDs of the same type can be used for calibrating and compensating the RSSI, and the large-scale production of the optical modules is facilitated.
In some embodiments, if there is no corresponding relationship corresponding to the APD in the corresponding relationship, determining similarity between APDs of a plurality of models in the corresponding relationship according to the attribute of the APD, and selecting the corresponding relationship of the APD corresponding to the model with the highest similarity to the APD of the dark current value to be determined as the corresponding relationship of the APD of the current dark current value to be determined.
For example, the correspondence relationship between APDs of the existing models includes the correspondence relationship between preset temperatures and dark currents of APDs of models a, B, C and D. If in this application, the optical module adopts the corresponding relation of the model E APD. Therefore, the corresponding relation of the APD of the model which is most similar or closest to the attribute of the APD of the E model can be used as the corresponding relation suitable for the APD of the E model; APD attributes include one or more of the attributes of the PN structure, the materials of construction, and intrinsic characteristics (e.g., avalanche breakdown voltage, gain bandwidth product).
And according to the similarity with the attributes, taking the corresponding relation of APDs with the attributes closest to the APD of the model E in the APDs of the model A, the model B, the model C and the model D as the corresponding relation of the APDs of the model E, wherein the APD closest to the manufacture of the PN structure is preferred, namely the overlap ratio of the manufacture features of the PN structure is highest. Therefore, when the attribute similarity is used for determining the corresponding relation between the preset temperature and the dark current when the used APD is applied to the optical module, the dark current value of the used APD at the current temperature can be quickly and effectively obtained, so that relatively accurate net working current is obtained, and the RSSI reporting accuracy of the optical communication system at different temperatures is favorably improved.
In some embodiments, before determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode, the corresponding relationship of the current APD is requested from the network;
if the request is successful, determining a dark current value of the avalanche photodiode at the current temperature according to a corresponding relation between a preset temperature and the dark current of the avalanche photodiode;
if the request fails, acquiring a corresponding relation of the model with the maximum similarity based on the model of the current APD; and adding the current APD model into the corresponding relation with the model with the maximum similarity, marking the corresponding relation of the current APD model in the corresponding relation, further marking the model needing the APD in the corresponding relation to further update the corresponding relation, subsequently updating the corresponding relation again if the corresponding relation of the APD model can be obtained, and independently establishing the corresponding relation between the temperature of the APD model and the dark current.
In the present exemplary embodiment, if the correspondence relationship of the APD of the applied model is stored in the network, the APD can be directly called after the network request; and if the APD attribute is not stored in the network, taking the corresponding relation of the APD with the nearest APD attribute in the model as the corresponding relation of the applied APD in the model. And simultaneously marking the corresponding relation of the current APD model to further determine the corresponding relation between the preset temperature and the current APD model dark current, and updating the stored corresponding relation.
In this exemplary embodiment, after the correspondence of the marked current APD model is further determined, the correspondence of the current APD model is stored as a relationship object that can be used for the next requested, the marking is cancelled, and the stored correspondence sequence is updated again.
In some embodiments, further comprising: obtaining the intensity of light received by the avalanche photodiode based on the net operating current. After the net working current of the APD in the optical module is obtained, the light intensity received by the APD in the optical module is obtained through the corresponding relation between the current signal intensity and the optical signal intensity, and therefore the accurate optical signal intensity is obtained.
In the present exemplary embodiment, when the correspondence between the preset temperature and the dark current of the avalanche photodiode is specifically applied, a dark current lookup table may be established in advance, and data in the correspondence may be stored in the table, as shown in table 1. Table 1 is a dark current lookup table of the correspondence between the preset temperature and the dark current of the avalanche photodiode. When the dark current data of the APD is needed, the data can be directly called from the dark current lookup table, and the method is simple to operate and convenient to use.
| Preset temperature (. degree. C.) | Dark current value (μ A) | Preset temperature (. degree. C.) | Dark current value (μ A) |
| -40 | 67 | 30 | 69 |
| -35 | 64 | 35 | 72 |
| -30 | 62 | 40 | 76 |
| -25 | 61 | 45 | 80 |
| -20 | 59 | 50 | 84 |
| -15 | 58 | 55 | 89 |
| -10 | 58 | 60 | 95 |
| -5 | 58 | 65 | 100 |
| 0 | 58 | 70 | 106 |
| 5 | 59 | 75 | 113 |
| 10 | 60 | 80 | 120 |
| 15 | 62 | 85 | 127 |
| 20 | 64 | 90 | 135 |
| 25 | 66 | 95 | 143 |
TABLE 1
The present disclosure also provides a signal intensity calibration apparatus for an optical module based on an avalanche photodiode. Fig. 3 is a schematic structural diagram illustrating a signal strength calibration apparatus of an avalanche photodiode based optical module according to an exemplary embodiment. As shown in fig. 3, the signal strength calibration apparatus for an avalanche photodiode-based optical module according to the embodiment of the present disclosure includes a first processing module 31, a second processing module 32, and a third processing module 33. The first processing module 31 is configured to determine a dark current value of the avalanche photodiode at the current temperature according to a corresponding relationship between a preset temperature and the dark current of the avalanche photodiode; a second processing module 32 for measuring the operating current of the avalanche photodiode at the present temperature; a third processing module 33, configured to obtain a net operating current of the avalanche photodiode at the current temperature based on the obtained operating current of the avalanche photodiode at the current temperature and the obtained dark current value at the current temperature.
In the present exemplary embodiment, the preset temperature may be a temperature value when a plurality of pre-stored optical modules operate; the correspondence between the preset temperature and the dark current of the avalanche photodiode is such that the plurality of preset temperatures correspond to the plurality of dark currents acquired in advance, and a one-to-one correspondence is formed. For example, the preset temperature is-40 ℃, which corresponds to a dark current of 67 μ A at the temperature of APD; the preset temperature is-30 ℃, and the dark current of the corresponding APD at the temperature is 62 muA; the preset temperature is-20 ℃, and the dark current of the corresponding APD at the temperature is 59 muA; the preset temperature is-10 ℃, and the dark current of the corresponding APD at the preset temperature is 58 muA and the like. The first processing module determines the dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current; when the second processing module measures the working current of the avalanche photodiode at the current temperature, the working current of the avalanche photodiode at the current temperature can be obtained through the mirror image of the mirror current source; the third processing module subtracts the dark current value at the current temperature from the working current of the avalanche photodiode at the current temperature to obtain the net working current of the avalanche photodiode at the current temperature, so that the net working current of the avalanche photodiode at the current temperature can be calibrated and obtained by compensating the dark current of the avalanche photodiode at the current temperature.
In some embodiments, the correspondence includes: dark current values of the avalanche photodiode at a plurality of temperatures;
the first processing module is used for determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current of the avalanche photodiode, and comprises:
and the first processing module is used for selecting a dark current value corresponding to the preset temperature with the minimum current temperature difference value as the dark current value of the current temperature according to the corresponding relation.
In some embodiments, the preset temperatures are temperature values of a plurality of arithmetic mean values.
In some embodiments, the difference between the predetermined temperatures is 5 degrees celsius.
In some embodiments, the first processing module, prior to determining the value of the dark current at the present temperature of the avalanche photodiode, comprises:
the second processing module measures actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures; and
obtaining a plurality of smooth curves formed by curve fitting of dark current values based on actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures; and
based on the smooth curve, obtaining a fitting dark current value corresponding to a temperature value between two adjacent preset temperatures; and
and establishing the corresponding relation between the preset temperatures and the fitted dark current values.
In some embodiments, the correspondence includes:
the model and the preset temperature of the avalanche photodiode are in a mapping relation with the dark current of the avalanche photodiode of the corresponding model;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes:
and obtaining the dark current value of the avalanche photodiode of the type at the current temperature according to the type of the avalanche photodiode, the current temperature and the corresponding relation.
In some embodiments, further comprising:
a fourth processing module for obtaining the intensity of light received by the avalanche photodiode based on the net operating current.
The present disclosure also provides a terminal. The terminal provided by the embodiment of the disclosure comprises: a processor and a memory for storing a computer program capable of running on the processor, wherein the processor is configured to execute the steps of the signal strength calibration method for the avalanche photodiode based optical module provided by the above embodiments when the computer program is run.
The present disclosure also provides a computer-readable storage medium having a computer program stored thereon. The computer program, when executed by a processor, implements the steps of the signal strength calibration method for the avalanche photodiode based optical module provided by the above embodiments.
When an APD-based optical module is used, the method and the device adopt temperature compensation measures to counteract RSSI reporting errors caused by the fact that dark current changes along with temperature.
The present disclosure also provides a hardware compensation method. The hardware compensation method is to compensate the dark current at high and low temperatures by using a thermistor. Therefore, the compensated current maintains a constant value at different temperatures, and the reporting error of the APD caused by the difference of the dark current at high and low temperatures is corrected. In the hardware compensation method, the temperature compensation curve after the thermistor is used is a determined curve, and when the dark current temperature change curve of APDs of different manufacturers or different batches changes, the thermistor with different temperature coefficients only needs to be replaced.
The present disclosure also provides a software compensation method. The software compensation method is to set the dark current temperature coefficient. For example, for different temperature segments, a corresponding temperature coefficient is set. The dark current magnitude of different temperature sections is represented by temperature coefficients. And finally, carrying out dark current compensation on the APD through the temperature coefficient, thereby correcting the reported error of the APD caused by the difference of the dark current at high and low temperatures. In the software compensation method, the dark current temperature compensation coefficient can be updated in software, so that the defect of replacing compensation components is overcome, and the flexibility is improved. Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.
Claims (10)
1. A signal strength calibration method for an avalanche photodiode based optical module, comprising:
determining a dark current value of the avalanche photodiode at the current temperature according to a corresponding relation between a preset temperature and the dark current of the avalanche photodiode;
measuring the operating current of the avalanche photodiode at the current temperature;
obtaining a net operating current of the avalanche photodiode at the current temperature based on the operating current of the avalanche photodiode at the current temperature and a dark current value at the current temperature, wherein the net operating current is used for representing the signal intensity of the optical signal induced by the avalanche photodiode.
2. The method of claim 1, wherein the correspondence relationship comprises: dark current values of the avalanche photodiode at a plurality of temperatures;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes:
and selecting a dark current value corresponding to the preset temperature with the minimum current temperature difference value as the dark current value of the current temperature according to the corresponding relation.
3. The method of signal strength calibration of an avalanche photodiode based optical module as claimed in claim 2,
the preset temperatures are temperature values arranged by a plurality of equal difference values.
4. The method as claimed in claim 3, wherein the difference between the preset temperatures is 5 degrees Celsius.
5. The method of claim 1, wherein the determining the dark current value at the current temperature of the avalanche photodiode before the calibrating the signal strength of the avalanche photodiode based optical module comprises:
measuring actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures;
obtaining a plurality of smooth curves formed by curve fitting of dark current values based on actually measured dark current values of the avalanche photodiode at a plurality of preset temperatures;
based on the smooth curve, obtaining a fitting dark current value corresponding to a temperature value between two adjacent preset temperatures; and
and establishing the corresponding relation between the preset temperatures and the fitted dark current values.
6. The method of claim 1, wherein the correspondence relationship comprises:
the model and the preset temperature of the avalanche photodiode are in a mapping relation with the dark current of the avalanche photodiode of the corresponding model;
the determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relationship between the preset temperature and the dark current of the avalanche photodiode includes:
and obtaining the dark current value of the avalanche photodiode of the type at the current temperature according to the type of the avalanche photodiode, the current temperature and the corresponding relation.
7. The method for signal strength calibration of an avalanche photodiode based optical module as claimed in any one of claims 1 to 6, further comprising:
obtaining the intensity of light received by the avalanche photodiode based on the net operating current.
8. An apparatus for calibrating signal strength of an avalanche photodiode based optical module, comprising:
the first processing module is used for determining the dark current value of the avalanche photodiode at the current temperature according to the corresponding relation between the preset temperature and the dark current of the avalanche photodiode;
a second processing module for measuring the operating current of the avalanche photodiode at the current temperature
And the third processing module is used for acquiring a net working current of the avalanche photodiode at the current temperature based on the acquired working current of the avalanche photodiode at the current temperature and the dark current value at the current temperature, wherein the net working current is used for representing the signal intensity of the optical signal induced by the avalanche photodiode.
9. A terminal, comprising: a processor and a memory for storing a computer program operable on the processor, wherein the processor is operable to perform the steps of the method of claims 1 to 7 when executing the computer program.
10. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method of claims 1 to 7.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112564826A (en) * | 2020-12-10 | 2021-03-26 | 四川华拓光通信股份有限公司 | Calibration method for monitoring optical power at receiving end of optical module |
| CN114449188A (en) * | 2020-11-02 | 2022-05-06 | 豪威科技股份有限公司 | Dark current calibration method and associated pixel circuitry |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103759824A (en) * | 2014-01-23 | 2014-04-30 | 西安电子科技大学 | Photoelectric conversion circuit used for visible light sensor |
| CN104821845A (en) * | 2015-05-13 | 2015-08-05 | 四川华拓光通信股份有限公司 | Method for calibrating luminous power of receiving end of optical module |
| CN105406912A (en) * | 2015-12-23 | 2016-03-16 | 上海市共进通信技术有限公司 | Received signal strength indication (RSSI) reporting compensation circuit structure for optical line terminal with avalanche photo diode (APD) |
| CN205488130U (en) * | 2016-02-26 | 2016-08-17 | 深圳市乐夷微电子有限公司 | Photoelectric detector , dark current suppressing circuit and visible light sensor |
| CN107526096A (en) * | 2017-08-15 | 2017-12-29 | 江苏超敏仪器有限公司 | It is a kind of to correct method of the temperature to SiPM gain effects |
| CN107786277A (en) * | 2016-08-25 | 2018-03-09 | 阿尔卡特朗讯 | A kind of method and apparatus for light-receiving |
| US20190288779A1 (en) * | 2018-03-15 | 2019-09-19 | Lumentum Operations Llc | Measurement device |
-
2020
- 2020-06-03 CN CN202010496177.0A patent/CN111800190A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103759824A (en) * | 2014-01-23 | 2014-04-30 | 西安电子科技大学 | Photoelectric conversion circuit used for visible light sensor |
| CN104821845A (en) * | 2015-05-13 | 2015-08-05 | 四川华拓光通信股份有限公司 | Method for calibrating luminous power of receiving end of optical module |
| CN105406912A (en) * | 2015-12-23 | 2016-03-16 | 上海市共进通信技术有限公司 | Received signal strength indication (RSSI) reporting compensation circuit structure for optical line terminal with avalanche photo diode (APD) |
| CN205488130U (en) * | 2016-02-26 | 2016-08-17 | 深圳市乐夷微电子有限公司 | Photoelectric detector , dark current suppressing circuit and visible light sensor |
| CN107786277A (en) * | 2016-08-25 | 2018-03-09 | 阿尔卡特朗讯 | A kind of method and apparatus for light-receiving |
| CN107526096A (en) * | 2017-08-15 | 2017-12-29 | 江苏超敏仪器有限公司 | It is a kind of to correct method of the temperature to SiPM gain effects |
| US20190288779A1 (en) * | 2018-03-15 | 2019-09-19 | Lumentum Operations Llc | Measurement device |
Non-Patent Citations (2)
| Title |
|---|
| 彼得•塞茨: "《现代光学工程精品译丛 单光子成像》", 31 August 2015 * |
| 陈东波: "《固体成像器件和系统》", 30 September 1991 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114449188A (en) * | 2020-11-02 | 2022-05-06 | 豪威科技股份有限公司 | Dark current calibration method and associated pixel circuitry |
| CN112564826A (en) * | 2020-12-10 | 2021-03-26 | 四川华拓光通信股份有限公司 | Calibration method for monitoring optical power at receiving end of optical module |
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