CN111799997B - Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter - Google Patents

Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter Download PDF

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CN111799997B
CN111799997B CN202010710998.XA CN202010710998A CN111799997B CN 111799997 B CN111799997 B CN 111799997B CN 202010710998 A CN202010710998 A CN 202010710998A CN 111799997 B CN111799997 B CN 111799997B
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turn
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CN111799997A (en
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亓庆新
赵翔
刘杰
周胜
陈兴朋
王俊
戴国强
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Hunan Wuwei Geological Science And Technology Co ltd
PowerChina Kunming Engineering Corp Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
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Abstract

The invention discloses an optimal design method of a classic RCD absorption loop, which comprises the steps of analyzing the working state of the classic RCD absorption loop and obtaining stage division results; listing differential equations for the divided stages and solving the differential equations; changing circuit parameters to obtain turn-off time under different parameters and modeling to obtain the shortest turn-off time; and acquiring corresponding RCD circuit parameters according to the shortest turn-off time and finishing the final optimal design. The invention also discloses a transient electromagnetic transmitter comprising the optimized design method of the classic RCD absorption loop. The method can obtain the matched capacitance resistance value in the shortest turn-off time, has simple operation steps and good practicability, can calculate the shortest turn-off time, thereby accurately designing the classic RCD circuit, and has high reliability and good practicability.

Description

Optimal design method of classic RCD absorption loop and transient electromagnetic transmitter
Technical Field
The invention belongs to the field of geological exploration, and particularly relates to an optimal design method of a classic RCD absorption loop and a transient electromagnetic transmitter.
Background
The transient electromagnetic method is a geological structure detection method which is widely applied in the geophysical science. The method utilizes the electromagnetic induction principle, sends a pulse electromagnetic field through a non-grounded loop or a ground wire source, and observes a secondary field by a receiver so as to obtain the electrical distribution characteristics of the underground medium. In recent years, the transient electromagnetic method plays an important role in mineral resource exploration, geological disaster investigation, underground water search and the like; particularly, China has vast land, more abundant mineral resources and large demand on instruments of the transient electromagnetic method, so the transient electromagnetic method is developed rapidly.
In a transient electromagnetic transmitter, the emission current turn-off technology directly affects the measurement accuracy of the transient electromagnetic method. Aiming at underground shallow part detection, the turn-off delay time is always required to be as short as possible, so that the observation of secondary field early signals is facilitated; in addition, the shorter the turn-off delay time is, the richer the corresponding high-frequency component is, and the higher the resolution of shallow part detection is; aiming at deep detection, a secondary field late signal needs to be observed, and in order to improve the intensity of the late signal, on one hand, emission current needs to be increased so as to enhance the electromagnetic response of a deep geological structure, and on the other hand, the turn-off delay time needs to be shortened as much as possible. Because the shorter the turn-off delay time is, the stronger the corresponding induced electromotive force is, the stronger the observed late signal is, and the detection depth of the system is effectively improved.
In order to make the transmit current turn-off delay as short as possible and have good linearity, the current falling edge processing method of the conventional transient electromagnetic transmitter includes: RCD circuit, RC circuit, power consumption type quasi resonant circuit, constant voltage clamp circuit etc. wherein the most classical RCD return circuit is widely used because of its suitability is high, simple structure, and the linearity is good, and turn-off time is short.
At present, a classic RCD circuit is shown in fig. 1, and the detailed calculation steps of the parameters are as follows:
(1) determination of the capacitance C:
the RC absorption circuit is used for generating overvoltage when the inductance L of the transmitting coil is turned off, and the RC absorption circuit is essentially used for absorbing energy generated by the inductance of the transmitting coil in the main circuit by the absorption capacitor C.
The energy stored in the inductor in the circuit is
Figure BDA0002596521390000021
Wherein L is the inductance of the transmitting coil, and I is the circuit turn-off current;
the energy to be absorbed on the absorption capacitor is
Figure BDA0002596521390000022
Where C is an absorption capacitor and Δ U is an overvoltage generated by the inductance of the transmitting coil, i.e., Δ U ═ Ucemax-UdWherein U iscemaxCan be observed by an oscilloscope to obtain UdIs a direct current voltage;
assuming that the magnetic energy stored in the main circuit transmitting coil inductor before the turn-off can be converted into the electric energy in C when the MOS is turned off, therefore, the magnetic energy has the advantages of
Figure BDA0002596521390000023
Further, the absorption capacitance can be obtained as
Figure BDA0002596521390000024
(2) Determination of the absorption resistance:
the RC absorption circuit is actually a first-order RC loop, and its discharge constant τ is RC; the RC absorption circuit is an energy consumption circuit, most of the energy absorbed by the capacitor C is consumed through the resistor R, so that the circuit cannot reduce the consumption of the circuit, and only the consumption of the MOS transistor during the on and off is transferred to the RC absorption circuit;
because the energy stored in the absorption capacitor C when the MOS is in steady state conduction is
Figure BDA0002596521390000025
Where f is the switching frequency of the switching circuit. The energy stored in the inductor is
Figure BDA0002596521390000026
I0Is the off current of the MOS. The power dissipated in the absorption resistor R is therefore the sum of the two, i.e.
Figure BDA0002596521390000031
Meanwhile, because the RC absorption loop is cycled with the switching of the MOS transistor, the energy stored in the absorption capacitor C must be consumed through the resistor R during the on period of the MOS transistor, and the discharge time of C is different for different absorption circuits, as long as τ ═ RC is smaller than that of the RC absorption circuit
Figure BDA0002596521390000032
The MOS conduction time can ensure that most of energy in the capacitor C is released without influencing the next absorption, so that the absorption resistor can pass through
Figure BDA0002596521390000033
Determining; in the formula tau0Is the conduction time of the MOS tube;
however, it is better that R is not lower, because there is large current oscillation in the absorption circuit, and the collector current peak value at the time of MOS on is also increased accordingly, so that R is set higher as much as possible when the above formula is satisfied, and reference may be made to this
Figure BDA0002596521390000034
Thus, in summary, the absorption resistance R is
Figure BDA0002596521390000035
As can be seen from the above detailed calculation steps, in the current technical solution, when determining the resistance capacitance value, the classical RCD loop first calculates the range of the approximate capacitance resistance value by using each parameter, then performs the test, and sequentially tests by using the range value. However, it is obvious that the test operation of the current technical scheme is complicated, and the shortest turn-off time cannot be determined.
Disclosure of Invention
One of the purposes of the invention is to provide an optimal design method of a classic RCD absorption loop, which can calculate the shortest turn-off time so as to accurately design the classic RCD circuit and has high reliability and good practicability.
It is a further object of the present invention to provide a transient electromagnetic transmitter comprising an optimized design method of said classical RCD absorption loop.
The invention provides an optimal design method of a classic RCD absorption loop, which comprises the following steps:
s1, analyzing the working state of a classic RCD absorption loop, and obtaining stage division results;
s2, analyzing the stages divided in the step S1, listing differential equations and solving the differential equations;
s3, according to the solving result obtained in the step S2, changing circuit parameters to obtain turn-off time under different parameters and modeling, so that the shortest turn-off time is obtained;
and S4, acquiring corresponding RCD circuit parameters according to the shortest turn-off time obtained in the step S3, thereby obtaining a final optimal design result.
Step S1, obtaining a stage division result, specifically dividing a classic RCD absorption loop into a first stage, a second stage and a third stage; wherein the first phase is defined as the phase when the inductive current is reduced to 0 for the first time; the second phase is defined as a current overshoot phase; the third phase is defined as the LRC concussion phase.
Step S2, analyzing the stages divided in step S1, listing differential equations, and solving, specifically, listing a differential method and solving by using the following steps:
A. the following equation is adopted as the differential equation of the first stage:
Figure BDA0002596521390000041
in the formula iLIs the inductor current; c1Is CK1～CK4A capacitance value; u shape4Is a junction capacitor CK1And junction capacitance CK4Voltage values at both ends; c is C1～C4A capacitance value; u shape1Is a capacitor C1And C4Voltage values at both ends; u shape2Is a capacitor C2And C3Voltage values at both ends; r is a resistance R1、R2、R3And R4The resistance value of (1); r1Is a resistance RLThe resistance value of (1); l is the inductance value of the inductor L;
B. setting intermediate parameters a ', b ' and c ' as
Figure BDA0002596521390000051
So as to obtain the characteristic equation of the differential equation set of the step A as a' p3+b′p2+c′p+1＝0；
C. Setting x1′、x2' and x3' is the solution of the characteristic equation obtained in step B, thus obtaining the solution of the characteristic equation obtained in step B
Figure BDA0002596521390000052
D. According to the initial conditions
Figure BDA0002596521390000053
And
Figure BDA0002596521390000054
parameter C2、C3And C4Is solved as
Figure BDA0002596521390000055
E. The following equation is used as the differential equation for the second stage:
Figure BDA0002596521390000061
in the formula of U3Is a junction capacitor CK2And junction capacitance CK3Voltage across;
F. setting the intermediate parameters b ', c', d 'and e' to
Figure BDA0002596521390000062
So as to obtain the characteristic equation p of the differential equation set of the step E4+b″p3+c″p2+d″p+e″＝0；
G. Setting x1″、x2″、x3"and x4"is the solution of the characteristic equation obtained in step F, thereby obtaining the solution of the characteristic equation obtained in step F
Figure BDA0002596521390000071
H. According to the initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure BDA0002596521390000072
In the formula of U1Is the capacitance C at the end of the first phase1And C4The voltage across; u shape2Is the capacitance C at the end of the first phase2And C3The voltage across; u shape4Is the junction capacitance CK at the end of the first phase1And junction capacitance CK4Voltage of (d);
I. the following equation is adopted as a differential equation of the third stage:
Figure BDA0002596521390000081
J. setting x1"and x2"' is the characteristic equation of the differential equation of step I
Figure BDA0002596521390000082
The solution of (1);
K. the solution to the characteristic equation of step J is obtained as:
Figure BDA0002596521390000083
l. according to initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure BDA0002596521390000091
In the formula of U1Capacitance C at the beginning1And C4The voltage across; u shape2Capacitance C at the beginning2And C3The voltage across; u shape3Is the initial junction capacitance CK2And junction capacitance CK3Voltage of (d); u shape4"is junction capacitance CK1And junction capacitance CK4Voltage of (d); i.e. iL"is a current iL。
Step S3, according to the solving result obtained in step S2, circuit parameters are changed to obtain turn-off time under different parameters, modeling is carried out, and therefore the shortest turn-off time is obtained, specifically, the circuit parameters of the RCD circuit are set, and a resistance and turn-off time graph under different capacitances is drawn by taking a resistance R as an abscissa and taking the turn-off time as an ordinate; resulting in the shortest turn-off time.
The invention also discloses a transient electromagnetic transmitter which comprises the optimized design method of the classic RCD absorption loop.
According to the optimal design method of the classic RCD absorption loop and the transient electromagnetic transmitter, the classic RCD absorption loop is subjected to deep systematic analysis, the voltage and current values of all stages are solved by the kirchhoff theorem, and finally, the shortest turn-off time is found out through modeling; the method can obtain the matched capacitance resistance value in the shortest turn-off time, has simple operation steps and good practicability, can calculate the shortest turn-off time, thereby accurately designing the classic RCD circuit, and has high reliability and good practicability.
Drawings
Fig. 1 is a schematic circuit diagram of a classical RCD absorption loop of the present invention.
FIG. 2 is a schematic flow chart of the method of the present invention.
Fig. 3 is a schematic diagram of a falling edge first-stage circuit topology in a working state of a classic RCD absorption loop of the present invention.
Fig. 4 is a circuit topology diagram of the second stage of falling edge in the working state of the classic RCD absorption loop of the present invention.
Fig. 5 is a circuit topology diagram of a third stage of falling edge in the working state of the classic RCD absorption loop of the present invention.
Fig. 6 is a schematic diagram showing the relationship between the peak voltage and the capacitance value at two ends of the capacitor in the working state of the conventional RCD absorption loop of the present invention.
Fig. 7 is a schematic diagram showing the relationship between the off-time and the resistance of different capacitance values in the working state of the classic RCD absorption loop of the present invention.
Detailed Description
As shown in fig. 2, is a schematic flow chart of the method of the present invention: the invention provides an optimal design method of a classic RCD absorption loop, which comprises the following steps:
in the circuit, a capacitor C1～C4Has the same capacitance value, and the resistance R1～R4Are the same in resistance value, K1～K4Is a MOS transistor, CK1～CK4Junction capacitance DK at both ends of MOS transistor1～DK4The backward diode is an MOS tube; when in use, K is closed first1And K3Closing the switch under the state of stable current to obtain a turn-off waveform;
s1, analyzing the working state of a classic RCD absorption loop, and obtaining stage division results; the method specifically comprises the steps of dividing a classic RCD absorption loop into a first stage, a second stage and a third stage; wherein the first phase is defined as the phase when the inductive current is reduced to 0 for the first time; the second phase is defined as a current overshoot phase; the third stage is defined as LRC concussion stage;
the first stage is as follows: the first drop of the inductor current to 0: in the first stage, the diode D2、D3Is turned off due to reverse bias of voltage, and the MOS transistor K2、K3Two-terminal backward diode DK2、DK3Start to conduct so that R2、R3Is short-circuited; part of energy of the inductor passes through the diode D1、D4Quilt C1～C4Absorption, R1And R4Another part of the energy is consumed and passed through K1、K4Junction capacitance CK at both ends1、CK4Absorption; at this stage, the inductor current iLThe equivalent circuit diagram at this stage is shown in FIG. 3;
and a second stage: current overshoot: at the end of the first phase, if the capacitance C is1、C4Voltage U across1Capacitance C larger than 2 times2、C3Voltage U across2Entering a second stage, otherwise entering a third stage; in the second stage, the capacitor C1、C4、CK1、CK4Discharge due to the capacitance C1And C4、CK1And CK4The voltages at both ends are the same and the circuit is symmetrical, so only the capacitor C is analyzed1、CK1Voltage at two ends; at this time, the diode D1、D4Diode D is turned off by voltage reversal2、D3Conducting; capacitor C1、CK1Discharge and supply C2、C3、CK2、CK3L charging, resistance R1～R4、RLConsumption of, among others, the capacitance C1And R3、C3、D3、L、RL、D2、C2A closed loop is formed. When the capacitance C1、C4Voltage U across1Capacitance C less than 2 times2、C3Voltage U across2Time, diode D2、D3And conducting and immediately entering the third stage. The equivalent circuit diagram at this stage is shown in fig. 4;
and a third stage: LRC concussion: when the capacitance C1、C4Voltage U across1Capacitance C less than 2 times2、C3Voltage U across2Entering into the third stage; at this time, when U1＞U2Time, capacitance C1、C4Energy quilt C2、C3Absorbed, R1～R4Consumption, CK1～CK4And L, RLLCR oscillation is formed; when U is turned1＝U2Time, capacitance C1～C4Common discharge, complementary resistance RLThe energy consumed; the equivalent circuit diagram at this stage is shown in fig. 5;
s2, analyzing the stages divided in the step S1, listing differential equations and solving the differential equations;
because the RCD loops are symmetrical, and the capacitance values of the capacitors on the absorption loops are the same, assuming that the capacitance values of the upper junctions of the MOS transistors are the same, the capacitor C can be set1、C4Voltage at both ends is U1Capacitor C2、C3Voltage at both ends is U2Node capacitance CK1、CK4Voltage at both ends is U4，R1～R4All resistances of (A) are R, RLHas a resistance of R1And assuming that all devices are ideal devices;
the differentiation method is listed and solved by the following steps:
A. the following equation is adopted as the differential equation of the first stage:
Figure BDA0002596521390000121
in the formula iLIs the inductor current; c1Is CK1～CK4A capacitance value; u shape4Is a junction capacitor CK1And junction capacitance CK4Voltage values at both ends; c is C1～C4A capacitance value; u shape1Is a capacitor C1And C4Voltage values at both ends; u shape2Is a capacitor C2And C3Voltage values at both ends; r is a resistance R1、R2、R3And R4The resistance value of (1); r1Is a resistance RLThe resistance value of (1); l is the inductance value of the inductor L;
B. setting intermediate parameters a ', b ' and c ' as
Figure BDA0002596521390000122
So as to obtain the characteristic equation of the differential equation set of the step A as a' p3+b′p2+c′p+1＝0；
C. Setting x1′、x2' and x3' is the solution of the characteristic equation obtained in step B, thus obtaining the solution of the characteristic equation obtained in step B
Figure BDA0002596521390000131
D. According to the initial conditions
Figure BDA0002596521390000132
And
Figure BDA0002596521390000133
parameter C2、C3And C4Is solved as
Figure BDA0002596521390000134
E. The following equation is used as the differential equation for the second stage:
Figure BDA0002596521390000135
in the formula of U3Is a junction capacitor CK2、CK3Voltage values at both ends;
F. setting the intermediate parameters b ', c', d 'and e' to
Figure BDA0002596521390000141
So as to obtain the characteristic equation p of the differential equation set of the step E4+b″p3+c″p2+d″p+e″＝0；
G. Setting x1″、x2″、x3"and x4"is the solution of the characteristic equation obtained in step F, thereby obtaining the solution of the characteristic equation obtained in step F
Figure BDA0002596521390000142
H. According to the initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure BDA0002596521390000151
In the formula of U1Is the capacitance C at the end of the first phase1And C4The voltage across; u shape2Is the capacitance C at the end of the first phase2And C3The voltage across; u shape4Is the junction capacitance CK at the end of the first phase1And junction capacitance CK4Voltage of (d);
I. the following equation is adopted as a differential equation of the third stage:
Figure BDA0002596521390000152
J. setting x1"and x2"' is the characteristic equation of the differential equation of step I
Figure BDA0002596521390000153
The solution of (1);
K. the solution to the characteristic equation of step J is obtained as:
Figure BDA0002596521390000161
l. according to initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure BDA0002596521390000162
In the formula of U1Capacitance C at the beginning1And C4The voltage across; u shape2Capacitance C at the beginning2And C3The voltage across; u shape3Is the initial junction capacitance CK2And junction capacitance CK3Voltage of (d); u shape4"is junction capacitance CK1And junction capacitance CK4Voltage of (d); i.e. iL"is a current iL；
S3, according to the solving result obtained in the step S2, changing circuit parameters to obtain turn-off time under different parameters and modeling, so that the shortest turn-off time is obtained; setting circuit parameters of an RCD circuit, and drawing a resistance and turn-off time graph line under different capacitance values by taking a resistance R as an abscissa and taking turn-off time as an ordinate; thereby obtaining the shortest turn-off time;
when the coil inductance L, the voltage U, the junction capacitance CK and the inductance L are fixed, the shortest turn-off time is continuously reduced along with the reduction of the capacitance C, but in practical application, the withstand voltage value of the capacitance C needs to be considered; fig. 6 is a graph of the peak voltage across the capacitor C versus the capacitance, where U is 12V, R is 100 Ω, CK is 3.6nF, L is 3mH, the X axis is the capacitance, and the Y axis is the peak voltage across the capacitor C; because the phase difference is too large, X, Y axes all take logarithmic coordinates; it can be seen from the figure that the peak voltage at the two ends of the capacitor is continuously increased along with the reduction of the capacitor, so that in practical application, the capacitor is reasonably selected to reach the shortest turn-off time and not exceed the withstand voltage value of the capacitor, so that the approximate range of the capacitor C can be known;
in order to realize the shortest turn-off time, the formula is used for calculation, and the resistance value of the resistor is taken as an X axis, and the turn-off time is taken as a Y axis, so that drawing is performed. Taking U as 12V, R L1 Ω, L3 mH, junction capacitance Ck1～Ck4The resistance R of the X coordinate is 3.6nF, 10-2000 omega, and the interval is 10 omega; the value of the capacitance C is: 100nF, 150nF, 220nF, 470nF, 1uF and 2.2uF, and in the LCR oscillation stage of the turn-off waveform, taking 1 per mill of initial energy as complete turn-off; because the turn-off time difference is too large, logarithm is taken to Y coordinateThe coordinates, the obtained graph is shown in fig. 7, which is a graph of the relationship between the off-time and the resistance under different capacitance values; in this case, the shortest turn-off time is 46us when the capacitor is 0.1uF and the resistor is 460 Ω, as is clear from the figure;
and S4, acquiring corresponding RCD circuit parameters according to the shortest turn-off time obtained in the step S3, thereby obtaining a final optimal design result.

Claims (4)

1. An optimized design method of a classic RCD absorption loop comprises the following steps:
s1, analyzing the working state of a classic RCD absorption loop, and obtaining stage division results;
s2, analyzing the stages divided in the step S1, listing differential equations and solving the differential equations; specifically, the differentiation method is listed and solved by adopting the following steps:
A. the following equation is adopted as the differential equation of the first stage:
Figure FDA0003089405530000011
in the formula iLIs the inductor current; c1Is CK1～CK4A capacitance value; u shape4Is a junction capacitor CK1And junction capacitance CK4Voltage values at both ends; c is C1～C4A capacitance value; u shape1Is a capacitor C1And C4Voltage values at both ends; u shape2Is a capacitor C2And C3Voltage values at both ends; r is a resistance R1、R2、R3And R4The resistance value of (1); r1Is a resistance RLThe resistance value of (1); l is the inductance value of the inductor L;
B. setting intermediate parameters a ', b ' and c ' as
Figure FDA0003089405530000012
And obtaining the characteristic equation of the differential equation set of the step A as a' p3+b′p2+c′p+1＝0；
C. Setting x1′、x2' and x3' is the solution of the characteristic equation obtained in step B, thus obtaining the solution of the characteristic equation obtained in step B
Figure FDA0003089405530000021
D. According to the initial conditions
Figure FDA0003089405530000022
And
Figure FDA0003089405530000023
parameter C2、C3And C4Is solved as
Figure FDA0003089405530000024
E. The following equation is used as the differential equation for the second stage:
Figure FDA0003089405530000025
in the formula of U3Is CK2And CK3Voltage at two ends;
F. setting the intermediate parameters b ', c', d 'and e' to
Figure FDA0003089405530000031
So as to obtain the characteristic equation p of the differential equation set of the step E4+b″p3+c″p2+d″p+e″＝0；
G. Setting x1″、x2″、x3"and x4"is the solution of the characteristic equation obtained in step F, thereby obtaining the solution of the characteristic equation obtained in step F
Figure FDA0003089405530000032
H. According to the initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure FDA0003089405530000041
In the formula of U1Is the capacitance C at the end of the first phase1And C4The voltage across; u shape2Is the capacitance C at the end of the first phase2And C3The voltage across; u shape4Is the junction capacitance CK at the end of the first phase1And junction capacitance CK4Voltage of (d);
I. the following equation is adopted as a differential equation of the third stage:
Figure FDA0003089405530000042
J. setting x1"and x2"' is the characteristic equation of the differential equation of step I
Figure FDA0003089405530000043
The solution of (1);
K. the solution to the characteristic equation of step J is obtained as:
Figure FDA0003089405530000051
l. according to initial conditions, parameter C2、C3、C4、C5And C6Is solved as
Figure FDA0003089405530000052
In the formula of U1Capacitance C at the beginning1And C4The voltage across; u shape2Capacitance C at the beginning2And C3The voltage across; u shape3Is the initial junction capacitance CK2And junction capacitance CK3Voltage of (d); u shape4"is junction capacitance CK1And junction capacitance CK4Voltage of (d); i.e. iL"is a current iL；
S3, according to the solving result obtained in the step S2, changing circuit parameters to obtain turn-off time under different parameters and modeling, so that the shortest turn-off time is obtained;
and S4, acquiring corresponding RCD circuit parameters according to the shortest turn-off time obtained in the step S3, thereby obtaining a final optimal design result.
2. The method according to claim 1, wherein the step S1 is to obtain a phase division result, specifically, the classical RCD absorption loop is divided into a first phase, a second phase and a third phase; wherein the first phase is defined as the phase when the inductive current is reduced to 0 for the first time; the second phase is defined as a current overshoot phase; the third phase is defined as the LRC concussion phase.
3. The optimal design method of a classical RCD absorption loop according to claim 1 or 2, characterized in that in step S3, according to the solution result obtained in step S2, the circuit parameters are changed to obtain the turn-off time under different parameters and modeling is performed, so as to obtain the shortest turn-off time, specifically, the circuit parameters of the RCD circuit are set, and the resistance R is used as the abscissa and the turn-off time is used as the ordinate, so as to plot the curves of the resistance and the turn-off time under different capacitance values; resulting in the shortest turn-off time.
4. A transient electromagnetic transmitter comprising a method of optimally designing a classical RCD absorption loop according to any one of claims 1 to 3.
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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202524283U (en) * 2012-04-11 2012-11-07 中国矿业大学 Buffer circuit structure of modular multi-level converter sub-module
CN107017610A (en) * 2017-05-11 2017-08-04 中国地质大学（武汉） A kind of passive constant pressure clamper of Transient Electromagnetic Transmitter rapidly switches off circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104407391B (en) * 2014-12-05 2017-02-22 吉林大学 Magnetic source non-modulation type transmitter and control method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202524283U (en) * 2012-04-11 2012-11-07 中国矿业大学 Buffer circuit structure of modular multi-level converter sub-module
CN107017610A (en) * 2017-05-11 2017-08-04 中国地质大学（武汉） A kind of passive constant pressure clamper of Transient Electromagnetic Transmitter rapidly switches off circuit

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IGBT关断尖峰电压抑制方法的研究;杨磊 等;《船电技术》;20091231(第4期);第5-8页 *
对IGBT逆变器吸收电路的改进与仿真;王鹏程 等;《电测与仪表》;20091031;第46卷(第526期);第67-71页 *
瞬变电磁发射机中的电流脉冲整形技术;付志红 等;《电力电子技术》;20060228;第40卷(第1期);第108-111页 *

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