CN111796540A - High-locking-precision bias control circuit system of electro-optical modulator - Google Patents
High-locking-precision bias control circuit system of electro-optical modulator Download PDFInfo
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Abstract
The invention discloses a high-locking-precision electro-optic modulator bias control circuit system, which belongs to the technical field of operating point control of Mach-Zehnder modulators and comprises a laser module, an electro-optic modulator, an optical fiber beam splitter, a high-frequency photoelectric detector, a low-frequency photoelectric detector, a signal conditioning module, an ADC (analog-to-digital converter) and operating point setting module, an MCU (microprogrammed control unit) control module, a DAC (digital-to-analog converter) module, a pilot frequency generation module and a signal mixing module. According to the invention, a 1KHz micro-disturbance signal is added at the input end of the electro-optical modulator, and the optical signal and the pilot signal contained in the signal are respectively processed after being detected by the low-frequency photoelectric detector, so that the measurement accuracy of the two signals is respectively improved; the control precision and the processing speed of the feedback signal are greatly improved by using a successive approximation method and an FFT algorithm; and the ratio K of the amplitude of the direct current signal and the amplitude of the alternating current signal output by the low-frequency detector is controlled through a PID algorithm, so that the locking precision of the system is improved.
Description
Technical Field
The invention relates to the technical field of operating point control of Mach-Zehnder modulators with modulated external intensity, in particular to a bias control circuit system of an electro-optic modulator with high locking precision.
Background
With the rapid development of internet business forms and the explosive increase of data volume, users of communication equipment have made higher demands on the bandwidth and portability of networks. Wireless communication is favored by more and more users because of the advantages of portability and flexibility, but with the increasing demand of data transmission speed, broadband wireless communication technology becomes a focus of attention, so that two subjects which are parallel to each other originally are gradually merged, and the wireless communication becomes microwave photonics.
The microwave photonics technology combines the large capacity of an optical network and the flexibility of wireless communication, and is a hot key technology in the wireless communication technology. However, although the existing external electro-optical modulation technology can provide a larger bandwidth, the electro-optical modulator is affected by changes in wavelength, temperature, radiation, optical power, polarization and other factors in a natural environment, and a working point may drift, so that the modulation accuracy of the electro-optical modulator is reduced, the communication quality of the whole optical fiber wireless communication system is deteriorated, and the application condition of the optical fiber wireless communication technology is seriously affected.
The bias control board of the current domestic electro-optical modulator is mostly concentrated in research institutes and universities, and the mass production and the product adapting to various requirements are fewer. The most used methods are: a signal with small disturbance is added to the bias input end of the modulator, and after the signal is modulated by the modulator, the signal detected by the low-frequency photoelectric detector is processed, judged, processed and fed back. However, most products cannot quickly lock and adjust the working point of the modulator aiming at severe environmental temperature change (1 ℃/min) and stress change, and cannot adjust the working point of the modulator in real time, even if a few products have the above functions, the circuit structure is complex and cannot adapt to the trend of miniaturization, and some control schemes are influenced by the change of the optical power of the front-end laser, so that the control precision of the working point is reduced. Therefore, the bias control circuit system of the electro-optical modulator with high locking precision is provided.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: how to solve the problems of low control precision, slow response time and insensitivity to external environment (temperature, stress and the like) change in the prior art on the control of the working point of the electro-optical modulator provides a bias control circuit system of the electro-optical modulator with high locking precision.
The invention solves the technical problems through the following technical scheme, and the invention comprises a laser module, an electro-optic modulator, an optical fiber beam splitter, a high-frequency photoelectric detector, a low-frequency photoelectric detector, a signal conditioning module, an ADC (analog-to-digital converter) and working point setting module, an MCU (microprogrammed control unit) control module, a DAC (digital-to-analog converter) module, a pilot frequency generation module and a signal mixing module;
the optical output end of the laser module is connected with the optical input end of the electro-optical modulator, the optical output end of the electro-optical modulator is connected with the optical input end of the optical fiber beam splitter, one optical output end of the optical fiber beam splitter is connected with the optical input end of the high-frequency photoelectric detector, the output end of the high-frequency photoelectric detector is connected with the rear end circuit, the other optical output end of the optical fiber beam splitter is connected with the optical input end of the low-frequency photoelectric detector, the output end of the low-frequency photoelectric detector is connected with the input end of the signal conditioning module, the output end of the signal conditioning module is connected with the input ends of the ADC and the working point setting module, the output ends of the ADC and the working point setting module are connected with the input end of the MCU control module, the output end of the MCU control module is connected with the input end of the, The output end of the pilot frequency generation module is correspondingly connected with the input end of the signal mixing module, and the output end of the signal mixing module is connected with the feedback control end of the electro-optical modulator.
Furthermore, the electro-optical modulator is a mach-zehnder modulator, and the electro-optical modulator modulates the optical signal entering the electro-optical modulator according to the input radio-frequency signal.
Further, the laser module is a narrow linewidth externally modulated laser, through which an optical carrier is provided for the entire link.
Furthermore, the coupling ratio of the optical fiber beam splitter is 1: and 99, one end with the coupling ratio of 1 is connected with the signal conditioning module, and one end with the coupling ratio of 99 is connected with the input end of the electro-optical modulator.
Furthermore, the signal conditioning module comprises an I/V conversion circuit and a band elimination filter and amplification circuit, wherein the I/V conversion circuit converts the tiny current signal output by the low-frequency photoelectric detector into a voltage signal, the band elimination filter and amplification circuit separates and amplifies the voltage signal output by the I/V conversion circuit, and the voltage signal is processed into a direct current signal containing optical power and an alternating current signal containing pilot frequency information.
Furthermore, the ADC and the working point setting module include an external synchronous dual-channel ADC circuit and an MCU built-in ADC circuit, wherein the external synchronous dual-channel ADC circuit is used to collect the dc signal and the ac signal output by the signal conditioning module, and the MCU built-in ADC circuit is used to collect the signal of the working point setting circuit.
Furthermore, the MCU control module is used for carrying out voltage acquisition, FFT operation, successive approximation operation and PID operation on the signals generated by the ADC and the working point setting module.
Furthermore, the working process of the MCU control module comprises the following steps:
s1: setting an operating point of an electro-optic modulator
The voltage at two ends of the resistor is controlled by adjusting the resistance value of the resistor of the access circuit of the potentiometer, and the working point of the current electro-optical modulator is set according to the voltage value at two ends of the potentiometer acquired by an ADC (the ADC is built in an MCU chip and is different from the ADC in the ADC and working point setting module) in an MCU control module;
s2: preliminary determination of voltage at operating point of electro-optic modulator
The working state of the electro-optic modulator is controlled by setting the voltage output by the DAC module, and the direct-current signals output by the signal conditioning module in different working states are collected and processed to calculate the voltage applied to the feedback control end of the electro-optic modulator when a set working point works;
s3: determining the position of a working point by using a successive approximation method
Searching a first voltage value of the set working point in a full range by using a larger stepping voltage, setting the found first voltage value as a middle point, narrowing the range before and after the middle point, narrowing the stepping voltage, and finding a second voltage value of the set working point; then setting the found second voltage value as a middle point, further reducing the range before and after the middle point, further reducing the step voltage, finding a third voltage value of the set working point, then continuously repeating the operation for 10 times in a total cycle, finding a tenth voltage value of the working point with higher precision, and taking the voltage value as the set voltage value of the working point of the electro-optical modulator to be controlled;
s4: locking the operating point of an electro-optic modulator in a set position
Extracting the amplitude and frequency information of the alternating current signal in the state of the step S3, setting the target value of PID control as the ratio K of the amplitude of the direct current signal to the amplitude of the alternating current signal, and using the PID to carry out automatic control to control the working point of the electro-optical modulator at a set position.
Further, the pilot generation module is a wen bridge oscillation circuit.
Compared with the prior art, the invention has the following advantages: the method of adding a small disturbance signal (1KHz +/-30 mv) at the input end of the electro-optical modulator is adopted, and the optical signal and the pilot signal contained in the electro-optical modulator are respectively processed after being detected by the low-frequency photoelectric detector, so that the measurement accuracy of the two signals is respectively improved; the control precision and the processing speed of the feedback signal are greatly improved by using a successive approximation method and an FFT algorithm in the MCU control module; the ratio K of the direct current component output by the low-frequency detector to the amplitude of the 1KHz signal is automatically controlled through a PID algorithm, so that the influence on the control precision of the system due to the change of the optical power of a front-end laser or the insertion loss of an optical link is avoided, and the locking precision of the system is improved; moreover, the general method only aims at the orthogonal point or the low-bias point, and does not consider the problem of selecting various working points for different application scenes. The invention can adjust the voltage at two ends of the potentiometer by changing the resistance value of the resistor of the potentiometer, thereby realizing the setting of any working point of the electro-optical modulator and improving the application range.
Drawings
Fig. 1 is a schematic diagram of the bias control circuitry of an electro-optic modulator with high lock accuracy according to an embodiment of the present invention.
Detailed Description
The following examples are given for the detailed implementation and specific operation of the present invention, but the scope of the present invention is not limited to the following examples.
As shown in fig. 1, the present embodiment provides a technical solution: a high-locking-precision electro-optical modulator bias control circuit system comprises a laser module 1, an electro-optical modulator 2, an optical fiber beam splitter 3, a high-frequency photoelectric detector 4, a low-frequency photoelectric detector 5, a signal conditioning module 6, an ADC (analog-to-digital converter) and working point setting module 7, an MCU (microprogrammed control Unit) control module 8, a DAC (digital-to-analog converter) module 9, a pilot frequency generation module 10 and a signal mixing module 11.
The optical output end of the laser 1 is connected with the port a of the electro-optical modulator 2, the port d of the electro-optical modulator 2 is connected with an electrical radio frequency signal, the port c of the electro-optical modulator 2 is connected with the optical fiber beam splitter 3, the port e of the optical fiber beam splitter 3 is connected with the port of the high-frequency photoelectric detector 4, the port f of the optical fiber beam splitter 3 is connected with the low-frequency photoelectric detector 5, the output port of the low-frequency photoelectric detector 5 is connected with the input port of the signal conditioning module 6, the output port of the signal conditioning module 6 is connected with the input port of the ADC and working point setting module 7, the output ports of the ADC and working point setting module 7 are connected with the MCU control module 8 through an SPI interface by adopting an SPI protocol, the MCU control module 8 is connected with the DAC module 9 through an SPI interface and by adopting an SPI protocol, the output port of the DAC module 9 and the output port of the pilot, the output port of the signal mixing block 11 is connected to a feedback control port (b-port, i.e., a bias control terminal described below) of the electro-optical modulator 2 to feedback-control the operating point of the electro-optical modulator 2.
The laser module 1 is a narrow linewidth externally modulated laser providing an optical carrier for the entire link.
The signal conditioning module 6 comprises an I/V conversion circuit and a band elimination filtering and amplifying circuit. The I/V conversion circuit is used for converting a tiny current signal output by the low-frequency photoelectric detector 5 into a voltage signal, and the band elimination filter and amplification circuit separates and amplifies the voltage signal output by the I/V conversion circuit and processes the voltage signal into a direct current signal containing optical power and an alternating current signal containing pilot frequency information.
The working process of the MCU control module 8 comprises the following steps:
s1: setting the operating point of an electro-optical modulator 2
The resistance value of the resistor of the potentiometer access circuit is adjusted to control the voltage at two ends of the resistor, and the working point of the current electro-optical modulator 2 is set according to the voltage value at two ends of the potentiometer collected by the built-in ADC (the ADC is built in the MCU chip and is different from the ADC in the ADC and working point setting module) of the MCU control module 8.
S2: preliminary determination of voltage at operating point of electro-optic modulator
The working state of the modulator 2 is controlled by setting the voltage output by the DAC module 9, the direct current signal output by the signal conditioning module 6 in different working states is collected and processed, the voltage which is correspondingly added at the feedback control end of the electro-optical modulator 2 is stored in a temporary register of an MCU chip in the MCU control module 8, the voltage at two ends of a potentiometer and the corresponding relation between the maximum value and the minimum value of different working points and the collected direct current signal (the modulation curve of the modulator is a cosine function) collected by an ADC (the ADC is built in the MCU chip and is different from the ADC in the ADC and working point setting module) in the MCU control module 8 are calculated, the theoretical value M0 of the direct current signal is calculated when the set working point works and is compared with the direct current signal stored in the temporary register, after the direct current signal amplitude M1 which is closest to the value is found, reading out the voltage V1 applied to the feedback control end of the electro-optical modulator 2 corresponding to the voltage V1 and setting the voltage V1 as a first voltage value;
s3: determining the position of a working point by using a successive approximation method
Using a larger step voltage to search a first voltage value of the set working point in the full range (in step S2), then setting the found first voltage value as a middle point, narrowing the range before and after the middle point, narrowing the step voltage, finding a direct current signal amplitude M2 closer to the value, reading a voltage V2 which is correspondingly added to the feedback control end of the electro-optical modulator 2, and setting the voltage V2 as a second voltage value; then, setting the found second voltage value as the middle point, further reducing the range before and after the second voltage value, further reducing the step voltage, finding the amplitude M3 of the direct current signal which is closer to the second voltage value, reading the voltage V3 which is correspondingly added to the feedback control end of the electro-optical modulator 2, setting the voltage as the third voltage value, then, continuously repeating the operation for 10 times in a total cycle, finding the tenth voltage value V10 of the working point with higher precision, and setting the voltage value as the set voltage value V0 of the working point of the electro-optical modulator 2 to be controlled;
s4: locking the operating point of the electro-optical modulator 2 in a set position
After the ac signal in the tenth voltage state obtained in step S3 is collected 1024 times using a 16-bit ADC and using a 200kSPS sampling rate, the frequency and amplitude information included in the 1024 points is calculated by the FFT algorithm of radix 4. And extracting amplitude information with the frequency of 1KHz, dividing the amplitude of the collected direct current signal, calculating a K value which is a target value Ksv controlled by PID, automatically controlling by PID, and controlling the working point of the electro-optical modulator at a set position.
The digital PID algorithm steps are as follows:
(1) adding a tenth voltage value to a feedback control end of the electro-optical modulator 2, wherein the ratio of the amplitude of 1KHz obtained by FFT calculation to the amplitude of the direct current signal is Kpv at the moment due to the change of the external environment;
(2) the calculation formula for obtaining the output voltage Vout of the feedback control end according to the calculation formula of the digital PID is as follows:
where e (t) is Ksv-Kpv, which is an error signal, Kp is a proportional coefficient, Ti is an integration time constant, and V0 is a tenth voltage value.
(3) Adding the calculation result Vout of the previous step into a feedback control end of the electro-optical modulator, wherein the ratio of the amplitude of 1KHz obtained by FFT calculation to the amplitude of the direct current signal is Kpv at the moment due to the change of the external environment;
(4) the calculation formula for obtaining the output voltage Vout of the feedback control end according to the calculation formula of the digital PID is as follows:
where e (t) is Ksv-Kpv, which is an error signal, Kp is a proportional coefficient, Ti is an integration time constant, and V1 is a voltage value calculated last time.
(5) And (4) repeating the steps (3) and (4), so that the whole system can be always stabilized near the set working point.
The MCU control module 8, the ADC and working point setting module 7 and the DAC module 9 are connected through two SPI interfaces, so that the simplification of a circuit is guaranteed, the transmission rate of signals is guaranteed, and the quick locking time is guaranteed.
The pilot frequency generation module 10 is a schlieren bridge oscillation circuit, and uses a high-precision low-ppm resistance capacitor to improve the stability of the system during temperature change, thereby ensuring the locking precision of the whole control circuit.
The working principle is as follows: light emitted by the laser module 1 is modulated by an electrical radio frequency signal (d port input) input into the electro-optical modulator 2 through the electro-optical modulator 2, the obtained modulation signal enters the optical fiber beam splitter 3 and is divided into two paths, one path of light with a coupling ratio of 99% enters the high-frequency photoelectric detector 4 and then enters the rear-end optical communication circuit, the other path of light with a coupling ratio of 1% enters the low-frequency photoelectric detector 5, a current signal generated after photoelectric conversion by the low-frequency photoelectric detector 5 enters the signal conditioning module 6, the signal conditioning module 6 processes the current signal and simultaneously outputs a direct current signal and an alternating current signal, the direct current signal and the alternating current signal are subjected to analog-to-digital conversion by the ADC and working point setting module 7, the obtained digital signal is transmitted to the MCU control module 8 for FFT operation, successive approximation operation and PID control operation, the obtained control signal is transmitted to the DAC module 9 by the MCU control module 8, the digital control signal is changed into an analog control signal, the analog control signal of the DAC module 9 is mixed with the pilot signal of the pilot generation module 10 in the signal mixing module 11, and the mixed output of the signal mixing module 11 is transmitted to the bias control end (b port) of the electro-optical modulator 2, thereby controlling the working point of the bias control plate.
To sum up, the bias control circuit system of the electro-optical modulator with high locking accuracy of the above embodiment adopts a method of adding a small perturbation signal (1KHz, +/-30 mv) to the input end of the electro-optical modulator, and respectively processes the optical signal and the pilot signal contained in the electro-optical modulator after the detection of the low-frequency photodetector, so as to respectively improve the measurement accuracy of the two signals; the MCU control module adopts a successive approximation method and an FFT algorithm, so that the control precision and the processing speed of the feedback signal are greatly improved; the ratio K of the direct current component output by the low-frequency detector to the amplitude of the 1KHz signal is controlled through a PID algorithm, so that the influence of the change of the optical power of a front-end laser or the insertion loss of an optical link on the control precision of the system is avoided, and the locking precision of the system is improved; and the problem of selecting various working points in different application scenes is not considered in the general method, and generally only the orthogonal points are selected, but the invention can change the voltage at two ends of the potentiometer through changing the resistance value of the resistor of the potentiometer, thereby changing the signal amplitude value acquired by the built-in ADC of the MCU control module, setting any working point of the electro-optical modulator, improving the application range and being worthy of popularization and use.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (9)
1. A bias control circuit system of an electro-optical modulator with high locking precision is characterized in that: the device comprises a laser module, an electro-optic modulator, an optical fiber beam splitter, a high-frequency photoelectric detector, a low-frequency photoelectric detector, a signal conditioning module, an ADC (analog-to-digital converter) and working point setting module, an MCU (microprogrammed control Unit) control module, a DAC (digital-to-analog converter) module, a pilot frequency generation module and a signal mixing module;
the optical output end of the laser module is connected with the optical input end of the electro-optical modulator, the optical output end of the electro-optical modulator is connected with the optical input end of the optical fiber beam splitter, one optical output end of the optical fiber beam splitter is connected with the optical input end of the high-frequency photoelectric detector, the output end of the high-frequency photoelectric detector is connected with the rear end circuit, the other optical output end of the optical fiber beam splitter is connected with the optical input end of the low-frequency photoelectric detector, the output end of the low-frequency photoelectric detector is connected with the input end of the signal conditioning module, the output end of the signal conditioning module is connected with the input ends of the ADC and the working point setting module, the output ends of the ADC and the working point setting module are connected with the input end of the MCU control module, the output end of the MCU control module is connected with the input end of the, The output end of the pilot frequency generation module is correspondingly connected with the input end of the signal mixing module, and the output end of the signal mixing module is connected with the feedback control end of the electro-optical modulator.
2. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the electro-optical modulator is a Mach-Zehnder modulator, and modulates optical signals entering the electro-optical modulator according to input radio-frequency signals.
3. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the laser module is a narrow linewidth externally modulated laser, through which an optical carrier is provided for the entire link.
4. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the coupling ratio of the optical fiber beam splitter is 1: and 99, one end with the coupling ratio of 1 is connected with the signal conditioning module, and one end with the coupling ratio of 99 is connected with the input end of the electro-optical modulator.
5. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the signal conditioning module comprises an I/V conversion circuit and a band-elimination filtering and amplifying circuit, wherein the I/V conversion circuit converts a tiny current signal output by the low-frequency photoelectric detector into a voltage signal, the band-elimination filtering and amplifying circuit separates and amplifies the voltage signal output by the I/V conversion circuit, and the voltage signal is processed into a direct current signal containing optical power and an alternating current signal containing pilot frequency information.
6. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the ADC and working point setting module comprises an external synchronous double-channel ADC circuit and an MCU built-in ADC circuit, wherein the external synchronous double-channel ADC circuit is used for collecting direct current signals and alternating current signals output by the signal conditioning module, and the MCU built-in ADC circuit is used for collecting signals of the working point setting circuit.
7. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: and the MCU control module is used for carrying out voltage acquisition, FFT (fast Fourier transform) operation, successive approximation operation and PID (proportion integration differentiation) operation on the signals generated by the ADC and the working point setting module.
8. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the working process of the MCU control module comprises the following steps:
s1: setting an operating point of an electro-optic modulator
The voltage at two ends of the resistor is controlled by adjusting the resistance value of the resistor of the potentiometer access circuit, and the working point of the current electro-optic modulator is set according to the voltage value at two ends of the potentiometer acquired by the built-in ADC of the MCU control module;
s2: preliminary determination of voltage at operating point of electro-optic modulator
The working state of the electro-optic modulator is controlled by setting the voltage output by the DAC module, and the direct-current signals output by the signal conditioning module in different working states are collected and processed to calculate the voltage applied to the feedback control end of the electro-optic modulator when a set working point works;
s3: determining the position of a working point by using a successive approximation method
Searching a first voltage value of the set working point in a full range by using a larger stepping voltage, setting the found first voltage value as a middle point, narrowing the range before and after the middle point, narrowing the stepping voltage, and finding a second voltage value of the set working point; then setting the found second voltage value as a middle point, further reducing the range before and after the middle point, further reducing the step voltage, finding a third voltage value of the set working point, then continuously repeating the operation for 10 times in a total cycle, finding a tenth voltage value of the working point with higher precision, and taking the voltage value as the set voltage value of the working point of the electro-optical modulator to be controlled;
s4: locking the operating point of an electro-optic modulator in a set position
Extracting the amplitude and frequency information of the alternating current signal in the state of the step S3, setting the target value of PID control as the ratio K of the amplitude of the direct current signal to the amplitude of the alternating current signal, and using the PID to carry out automatic control to control the working point of the electro-optical modulator at a set position.
9. The bias control circuitry of claim 1 for a high lock-in accuracy electro-optic modulator, wherein: the pilot frequency generation module is a venturi bridge oscillation circuit.
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| CN115276797A (en) * | 2022-06-27 | 2022-11-01 | 深圳麦科信科技有限公司 | Laser transmission circuit, laser transmission assembly and electronic measuring instrument |
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| CN108306689A (en) * | 2018-01-13 | 2018-07-20 | 西安电子科技大学 | Double parallel Mach-Zehnder modulators based on three pilot tones（DPMZM）Arbitrary point autobias control method |
| CN110609400A (en) * | 2019-10-23 | 2019-12-24 | 广西师范大学 | High-integration electro-optical modulator and electro-optical modulation method |
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