CN111790404A - Defective type sulfur indium zinc microsphere visible light catalyst, preparation method and application - Google Patents

Defective type sulfur indium zinc microsphere visible light catalyst, preparation method and application Download PDF

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CN111790404A
CN111790404A CN202010652003.9A CN202010652003A CN111790404A CN 111790404 A CN111790404 A CN 111790404A CN 202010652003 A CN202010652003 A CN 202010652003A CN 111790404 A CN111790404 A CN 111790404A
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preparation
defective
visible light
microsphere
znin
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CN111790404B (en
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李贞子
周卫
武佳星
王世杰
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Shandong Mengyuan New Material Technology Co ltd
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Qilu University of Technology
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00Catalysts, in general, characterised by their form or physical properties
    • B01J35/30Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
    • B01J35/39Photocatalytic properties
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/02Sulfur, selenium or tellurium; Compounds thereof
    • B01J27/04Sulfides
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00Catalysts, in general, characterised by their form or physical properties
    • B01J35/50Catalysts, in general, characterised by their form or physical properties characterised by their shape or configuration
    • B01J35/51Spheres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J35/00Catalysts, in general, characterised by their form or physical properties
    • B01J35/60Catalysts, in general, characterised by their form or physical properties characterised by their surface properties or porosity
    • B01J35/61Surface area
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B3/00Hydrogen; Gaseous mixtures containing hydrogen; Separation of hydrogen from mixtures containing it; Purification of hydrogen
    • C01B3/02Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen
    • C01B3/04Production of hydrogen or of gaseous mixtures containing a substantial proportion of hydrogen by decomposition of inorganic compounds, e.g. ammonia
    • C01B3/042Decomposition of water
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/02Processes for making hydrogen or synthesis gas
    • C01B2203/0266Processes for making hydrogen or synthesis gas containing a decomposition step
    • C01B2203/0277Processes for making hydrogen or synthesis gas containing a decomposition step containing a catalytic decomposition step
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2203/00Integrated processes for the production of hydrogen or synthesis gas
    • C01B2203/10Catalysts for performing the hydrogen forming reactions
    • C01B2203/1041Composition of the catalyst
    • C01B2203/1076Copper or zinc-based catalysts
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/30Hydrogen technology
    • Y02E60/36Hydrogen production from non-carbon containing sources, e.g. by water electrolysis

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Abstract

The invention discloses a defect type sulfur indium zinc microsphere visible light catalyst, a preparation method and application thereof, wherein the preparation method comprises the step of mixing ZnIn2S4And heating the microspheres to 90-120 ℃ in a hydrogen atmosphere for heat treatment to obtain the defective S-in-Zn microsphere visible light catalyst. The defect type sulfur indium zinc microsphere visible light catalyst provided by the invention can widen the light absorption range of the catalyst, and improve the separation efficiency of photo-generated electrons and holes so as to improve the photocatalysis efficiency.

Description

Defective type sulfur indium zinc microsphere visible light catalyst, preparation method and application
Technical Field
The invention relates to a preparation method and a use method of a photocatalyst, in particular to a defect type sulfur indium zinc microsphere visible light photocatalyst, and a preparation method and application thereof.
Background
The information in this background section is only for enhancement of understanding of the general background of the invention and is not necessarily to be construed as an admission or any form of suggestion that this information forms the prior art that is already known to a person of ordinary skill in the art.
The world is facing the crisis of energy shortage today, and environmental issues have become a barrier to further development of human civilization. In order to solve the energy problem, semiconductor photocatalysis is developed in recent years, and hydrogen production by decomposing water is a very promising technology. Among the numerous semiconductor photocatalysts, ZnIn2S4As a ternary metal chalcogenide, a typical visible light response type photocatalyst has the advantages of adjustable band gap and wider light absorption range, so that the ternary metal chalcogenide has wide application in the field of photocatalysis in recent years. The effective optical absorption of solar energy in the visible range also leads to ZnIn2S4Becomes a promising, environmentally friendly and visible light driven photocatalyst for cleaning energy conversion. ZnIn2S4The method has great advantages in hydrogen production, however, the research of the inventor of the invention finds that the ZnIn is existed2S4Has the defect of low hydrogen production efficiency.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a defect type sulfur indium zinc microsphere visible light catalyst, a preparation method and application thereof, which can widen the light absorption range of the catalyst, and improve the separation efficiency of photo-generated electron and hole pairs so as to improve the photocatalysis efficiency.
In order to achieve the purpose, the technical scheme of the invention is as follows:
on the one hand, the preparation method of the defect type sulfur indium zinc microsphere visible light catalyst comprises the step of mixing ZnIn2S4And heating the microspheres to 90-120 ℃ in a hydrogen atmosphere for heat treatment to obtain the defective S-in-Zn microsphere visible light catalyst.
Experiments show that when hydrogen is adopted to react on ZnIn at 90-120 DEG C2S4After the microspheres are subjected to heat treatment, ZnIn is obtained2S4The specific surface area of the microspheres is enlarged, so that the active sites on the surface are increased, and the hydrogen production performance is improved, while ZnIn is treated at the temperature of 80 DEG C2S4The specific surface area of the microspheres becomes smaller, the hydrogen production performance is reduced, and when hydrogen is in the hydrogen production processZnIn is caused when the treatment is carried out at 120 ℃ or higher2S4The microspheres are decomposed, and thus ZnIn cannot be obtained2S4And (3) microspheres.
On the other hand, the defect type sulfur indium zinc microsphere visible light catalyst is obtained by the preparation method.
In a third aspect, the defect type sulfur indium zinc microsphere visible light catalyst is applied to photolysis of water to produce hydrogen.
In a fourth aspect, a method for preparing hydrogen by photolysis of water comprises adding the above-described defective S-in-Zn microspheres to a system containing water, lactic acid and chloroplatinic acid, and performing light irradiation treatment.
The invention has the beneficial effects that:
the defect ZnIn prepared by low-temperature surface hydrogenation2S4The microsphere visible-light-driven photocatalyst has good hydrogen production performance, while ZnIn prepared by the prior art2S4The photocatalyst has poor hydrogen production performance, can be improved by more than 2 times, and still has good stability through repeated tests. The catalyst with the microsphere structure has larger specific surface area and abundant surface active sites, generally shows better photocatalytic performance than bulk phase materials, and can generate surface defects after hydrogenation. In addition, the structure increases the contact area with the catalyst and greatly improves the hydrogen production performance.
The invention particularly adopts the strategies of hydrothermal and low-temperature surface hydrogenation to prepare ZnIn2S4The microsphere photocatalyst can better regulate and control the surface defects of the photocatalyst. Defective ZnIn prepared by the same2S4The microsphere photocatalyst has the advantages of good stability and high photocatalytic activity, and can be applied to the fields of energy, environmental protection and the like. The invention has the advantages of simple preparation process, simple experimental equipment, low cost, high benefit and easy realization of commercialization.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention.
FIG. 1 shows the preparation of defective ZnIn in examples 1 to 3 of the present invention2S4Experimental flow diagrams of microspheres;
FIG. 2 shows the preparation of defective ZnIn in examples 1 to 3 of the present invention2S4XRD spectrum of microsphere;
FIG. 3 shows the preparation of defective ZnIn in examples 1 to 3 of the present invention2S4Nitrogen adsorption and desorption curves of the microspheres;
FIG. 4 shows the preparation of defective ZnIn in examples 1 to 3 of the present invention2S4Pore size distribution curve of the microspheres;
FIG. 5 shows defective ZnIn prepared in example 2 of the present invention2S4SEM image of microspheres.
Detailed Description
It is to be understood that the following detailed description is exemplary and is intended to provide further explanation of the invention as claimed. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In view of the prior ZnIn2S4The invention provides a defect of low hydrogen production efficiency, and provides a defect type sulfur indium zinc microsphere visible light catalyst, a preparation method and an application thereof.
The invention provides a preparation method of a defect type sulfur indium zinc microsphere visible light catalyst, which is implemented by mixing ZnIn2S4And heating the microspheres to 90-120 ℃ in a hydrogen atmosphere for heat treatment to obtain the defective S-in-Zn microsphere visible light catalyst.
Experiments show that when the hydrogen is adopted at 90-120 DEG CFor ZnIn2S4After the microspheres are treated, ZnIn is obtained2S4The specific surface area of the microspheres is enlarged, so that the active sites on the surface are increased, and the hydrogen production performance is improved, while ZnIn is treated at the temperature of 80 DEG C2S4The specific surface area of the microspheres becomes smaller, the hydrogen production performance is reduced, and ZnIn is caused when the hydrogen is treated at the temperature of more than 120 DEG C2S4The microspheres are decomposed, and thus ZnIn cannot be obtained2S4And (3) microspheres.
In some examples of this embodiment, the heat treatment temperature is 99 to 101 ℃. Experiments prove that the hydrogen has better treatment effect on the sulfur indium zinc microspheres at the treatment temperature, larger specific surface area and stronger hydrogen production performance.
In some examples of this embodiment, the heat treatment time is 3 to 4 hours. The heat treatment time can ensure the treatment effect of the hydrogen on the sulfur indium zinc microspheres.
In some examples of this embodiment, the heating rate of the heat treatment is 1 to 2 ℃/min.
In some embodiments of this embodiment, ZnIn2S4The preparation method of the microsphere comprises the following steps: synthesizing zinc salt, indium salt and L-cysteine by a hydrothermal method.
The hydrothermal method is a chemical reaction which is carried out in a sealed pressure container by taking water as a solvent under the conditions of high temperature (100-370 ℃) and high pressure (the environmental pressure is 21.7 MPa).
The zinc salt in the invention refers to a compound which is soluble in water and has zinc ions as cations, such as zinc nitrate and the like.
The indium salt according to the present invention is a compound which is soluble in water and has an indium ion as a cation, and for example, indium nitrate and the like.
In one or more embodiments, the mass ratio of the total mass of the zinc salt, the indium salt and the L-cysteine to the water is 3-5: 5-10.
In one or more embodiments, the temperature of the hydrothermal process is 180 to 200 ℃.
In one or more embodiments, the hydrothermal treatment time is 16-20 hours.
In one or more embodiments, the hydrothermally treated material is washed with water and ethanol in sequence.
In another embodiment of the invention, the defect type sulfur indium zinc microsphere visible light catalyst is obtained by the preparation method.
The third embodiment of the invention provides an application of the defective S-in-Zn microsphere visible-light-induced photocatalyst in hydrogen production by photolysis of water.
In a fourth embodiment of the present invention, there is provided a method for preparing hydrogen by photolyzing water, wherein the defective S-in-Zn microspheres are added to a system containing water, lactic acid and chloroplatinic acid, and then subjected to light irradiation.
In some examples of the embodiment, the light irradiation treatment is performed by using a 200-400W xenon lamp and a power density of 50-150 mW cm-2The irradiation is carried out for 4-6 h under the condition of simulating sunlight.
In order to make the technical solutions of the present invention more clearly understood by those skilled in the art, the technical solutions of the present invention will be described in detail below with reference to specific embodiments.
Example 1
0.074g Zn (NO) is weighed out3)2·6H2O and 0.15g In (NO)3)3·H2O stirring (rotating speed 500r min)-1) Dissolved in 30mL of distilled water, and further added with 0.233g L-cysteine to continue stirring for 2 hours. The hydrothermal reaction was carried out at 200 ℃ for 18 h. After cooling, the solution was centrifuged (4000r min)-1And centrifuged for 3min), and the separated precipitate was washed three times with water and ethanol, respectively. Vacuum drying at 60 deg.C for 12h in drying oven, and grinding the dried powder to obtain ZnIn2S4And (3) powder materials. ZnIn is mixed with a solvent2S4Placing the powder material in a tubular furnace, introducing hydrogen into the tubular furnace, wherein the flow rate of the hydrogen is 40mL min-1Heating to 80 ℃ at the speed of 2 ℃/min, roasting for 3h, and cooling to room temperature to obtain the defective ZnIn2S4And (3) powder materials.
Example 2
0.074g Zn (NO) is weighed out3)2·6H2O and 0.15g In (NO)3)3·H2O stirring (rotating speed 500r min)-1) Dissolved in 30mL of distilled water, and further added with 0.233g L-cysteine to continue stirring for 2 hours. The hydrothermal reaction was carried out at 200 ℃ for 18 h. After cooling, the solution was centrifuged (4000r min)-1And centrifuged for 3min), and the separated precipitate was washed three times with water and ethanol, respectively. Vacuum drying at 60 deg.C for 12h in drying oven, and grinding the dried powder to obtain ZnIn2S4And (3) powder materials. ZnIn is mixed with a solvent2S4Placing the powder material in a tubular furnace, introducing hydrogen into the tubular furnace, wherein the flow rate of the hydrogen is 40mL min-1Heating to 100 ℃ at the speed of 2 ℃/min, roasting for 3h, and cooling to room temperature to obtain defective ZnIn2S4And (3) powder materials.
Example 3
0.074g Zn (NO) is weighed out3)2·6H2O and 0.15g In (NO)3)3·H2O stirring (rotating speed 500r min)-1) Dissolved in 30mL of distilled water, and further added with 0.233g L-cysteine to continue stirring for 2 hours. The hydrothermal reaction was carried out at 200 ℃ for 18 h. After cooling, the solution was centrifuged (4000r min)-1And centrifuged for 3min), and the separated precipitate was washed three times with water and ethanol, respectively. Vacuum drying at 60 deg.C for 12h in drying oven, and grinding the dried powder to obtain ZnIn2S4And (3) powder materials. ZnIn is mixed with a solvent2S4Placing the powder material in a tubular furnace, introducing hydrogen into the tubular furnace, wherein the flow rate of the hydrogen is 40mL min-1Heating to 120 ℃ at the speed of 2 ℃/min, roasting for 3h, and cooling to room temperature to obtain defective ZnIn2S4And (3) powder materials.
Examples 1 to 3 preparation of defective ZnIn2S4The experimental scheme for microspheres is shown in FIG. 1.
Examples 1 to 3 preparation of defective ZnIn2S4The XRD spectrum of the microsphere is shown in figure 2, the position of each diffraction peak is related to ZnIn2S4The major crystal planes substantially correspond. The characteristic diffraction peaks of the four samples do not change too much, the positions and peak widths are similar, and no obvious shift occurs. Only the diffraction peak of sulfur indium zinc after low-temperature hydrogenation reductionThe peak width is slightly increased, and the peak intensity is slightly weakened. The reason for this may be that the structure of the material crystals is slightly changed during the hydrogen calcination. The sample can keep the original structure after low-temperature hydrogenation reduction treatment, and has good stability.
Examples 1 to 3 preparation of defective ZnIn2S4The nitrogen adsorption and desorption curves and the pore size distribution curves of the microspheres are shown in figures 3-4, and the defective ZnIn prepared in examples 2 and 32S4The microspheres are improved compared to the as-is, wherein the specific surface area is highest at 100 ℃ of the hydrotreatment. The pore diameters of these samples are mostly concentrated around 10nm and thus belong to mesoporous materials. The larger the specific surface area of the sample, the more active sites are exposed on the surface of the sample, and the more sulfur vacancies are generated on the surface after the hydrotreating, and these sulfur vacancy defects contribute to the enhancement of the photocatalytic activity.
Example 2 defective ZnIn preparation2S4The SEM image of the microspheres is shown in FIG. 5, and it can be seen that the spherical structure is very obvious, the morphology is relatively uniform, and the diameter of the sphere is about 5 μm. Compared with other materials, the microsphere structure can provide more active sites, and the photocatalytic oxidation capacity is greatly improved.
The defective ZnIn prepared in example 2 is treated2S4A microspherical visible-light-driven photocatalyst is used for a photocatalytic hydrogen production test, and the method comprises the following steps: to a solution containing 90mL of water, 10mL of lactic acid and 0.1mL of 0.5 wt% chloroplatinic acid, 50mg of ZnIn was added2S4And (3) irradiating the microsphere photocatalyst for 5 hours under the condition of 300W simulated sunlight, and analyzing hydrogen generated in the device by using a gas chromatograph and calculating the hydrogen yield. Through calculation, the defective ZnIn prepared in the example 2 under the condition that the hydrogenation temperature is 100 DEG C2S4The microsphere visible-light-driven photocatalyst has good hydrogen production performance (2.15mmol h)-1g-1) Is improved by more than 2 times (0.99mmol h) than the performance before hydrogenation-1g-1) And has good stability through a cycle test. Due to the microsphere structure, the contact area of the microsphere structure and the catalyst is increased, and the photocatalytic hydrogen production performance is improved.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. A preparation method of a defect type sulfur indium zinc microsphere visible light catalyst is characterized in that ZnIn is added2S4And heating the microspheres to 90-120 ℃ in a hydrogen atmosphere for heat treatment to obtain the defective S-in-Zn microsphere visible light catalyst.
2. The preparation method of the defective ZnSInZn microsphere visible light catalyst as claimed in claim 1, wherein the heat treatment temperature is 99-101 ℃.
3. The preparation method of the defective ZnS-InZn microsphere visible light catalyst as claimed in claim 1, wherein the heat treatment time is 3-4 h.
4. The preparation method of the defective ZnS-InZn microsphere visible light catalyst as claimed in claim 1, wherein the heating rate of the heat treatment is 1-2 ℃/min.
5. The method for preparing the defective ZnSInZn microsphere visible-light-induced photocatalyst as claimed in claim 1, wherein the ZnIn is2S4The preparation method of the microsphere comprises the following steps: synthesizing zinc salt, indium salt and L-cysteine by a hydrothermal method.
6. The preparation method of the defective S-in-Zn microsphere visible-light-induced photocatalyst as claimed in claim 5, wherein the mass ratio of the total mass of the zinc salt, the indium salt and the L-cysteine to the water is 3-5: 5-10;
or the temperature of the hydrothermal method is 180-200 ℃;
or the time for the hydrothermal method treatment is 16-20 h.
7. A defect type S-in-Zn microsphere visible light catalyst, which is characterized by being obtained by the preparation method of any one of claims 1 to 6.
8. The use of the defective ZnS-InZn microsphere visible-light-induced photocatalyst as claimed in claim 7 in the photolysis of water to produce hydrogen.
9. A method for preparing hydrogen by photolyzing water is characterized in that the defect type sulfur indium zinc microspheres are added into a system containing water, lactic acid and chloroplatinic acid, and light irradiation treatment is carried out.
10. The method for preparing hydrogen by water photolysis according to claim 9, wherein the light irradiation is performed by using a 200-400W xenon lamp and a power density of 50-150 mW cm-2The irradiation is carried out for 4-6 h under the condition of simulating sunlight.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113070074A (en) * 2021-03-31 2021-07-06 青岛大学 Ti3C2-MXene/ZnIn2S4Preparation method and application of composite photocatalyst
CN114602509A (en) * 2022-04-13 2022-06-10 青岛科技大学 S-rich defect ZnIn2S4/In2Se3Heterojunction photocatalyst and application
CN114606527A (en) * 2022-04-06 2022-06-10 齐鲁工业大学 One-dimensional defective iron oxide nanorod visible light anode and preparation method and application thereof
CN115090299A (en) * 2022-07-25 2022-09-23 陕西科技大学 ZnIn with sulfur defect 2 S 4 Preparation method of photocatalyst and application of photocatalyst in degrading antibiotics

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009066529A (en) * 2007-09-13 2009-04-02 Tokyo Univ Of Science Photocatalyst, its manufacturing method, and method for generating hydrogen gas
CN102218333A (en) * 2011-01-07 2011-10-19 大连海事大学 Method for preparing ZnIn2S4 visible-light activated photocatalyst at low temperature
CN102795661A (en) * 2012-09-11 2012-11-28 黑龙江大学 Method for preparing hierarchical floriform ZnIn2S4 ternary compound
CN105214690A (en) * 2015-09-25 2016-01-06 安徽医科大学第一附属医院 A kind of tree peony flower-shaped heterojunction structure micron ball photochemical catalyst and Synthesis and applications thereof
CN105950140A (en) * 2016-04-28 2016-09-21 江苏大学 Method for preparing Ag:ZnIn2S4 luminescent quantum dots and photocatalyst
CN107282070A (en) * 2017-05-26 2017-10-24 上海纳米技术及应用国家工程研究中心有限公司 A kind of three-dimensional flower piece shape sulfur-indium-zinc micro-nano nanowire arrays and its preparation method and application
CN109569657A (en) * 2019-01-04 2019-04-05 中国计量大学 One kind is rich in surface sulphur vacancy defect state structure sulfur-indium-zinc photochemical catalyst and preparation method thereof
CN109821553A (en) * 2019-01-16 2019-05-31 上海理工大学 A kind of ZnIn for thering is adsorption photochemical catalysis to act synergistically2S4The preparation method and its effect of microballoon
CN110040764A (en) * 2018-01-15 2019-07-23 中国科学技术大学 The method of the preparation method and photocatalytic reduction of carbon oxide of the sulfide of sulfur-bearing defect
CN110354873A (en) * 2019-07-16 2019-10-22 复旦大学 A kind of black phosphorus/ZnIn2S4Composite visible light catalyst and preparation method thereof
CN110508291A (en) * 2019-09-02 2019-11-29 中国矿业大学 A kind of Au-ZnIn2S4The preparation method of nano-array electrode photocatalysis fixed nitrogen material
CN111054394A (en) * 2019-12-26 2020-04-24 江苏大学 P-n heterojunction photocatalyst and preparation method and application thereof
CN111298809A (en) * 2020-02-17 2020-06-19 中国矿业大学 ZnIn rich in surface S vacancies2S4Preparation method of nanosheet array

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009066529A (en) * 2007-09-13 2009-04-02 Tokyo Univ Of Science Photocatalyst, its manufacturing method, and method for generating hydrogen gas
CN102218333A (en) * 2011-01-07 2011-10-19 大连海事大学 Method for preparing ZnIn2S4 visible-light activated photocatalyst at low temperature
CN102795661A (en) * 2012-09-11 2012-11-28 黑龙江大学 Method for preparing hierarchical floriform ZnIn2S4 ternary compound
CN105214690A (en) * 2015-09-25 2016-01-06 安徽医科大学第一附属医院 A kind of tree peony flower-shaped heterojunction structure micron ball photochemical catalyst and Synthesis and applications thereof
CN105950140A (en) * 2016-04-28 2016-09-21 江苏大学 Method for preparing Ag:ZnIn2S4 luminescent quantum dots and photocatalyst
CN107282070A (en) * 2017-05-26 2017-10-24 上海纳米技术及应用国家工程研究中心有限公司 A kind of three-dimensional flower piece shape sulfur-indium-zinc micro-nano nanowire arrays and its preparation method and application
CN110040764A (en) * 2018-01-15 2019-07-23 中国科学技术大学 The method of the preparation method and photocatalytic reduction of carbon oxide of the sulfide of sulfur-bearing defect
CN109569657A (en) * 2019-01-04 2019-04-05 中国计量大学 One kind is rich in surface sulphur vacancy defect state structure sulfur-indium-zinc photochemical catalyst and preparation method thereof
CN109821553A (en) * 2019-01-16 2019-05-31 上海理工大学 A kind of ZnIn for thering is adsorption photochemical catalysis to act synergistically2S4The preparation method and its effect of microballoon
CN110354873A (en) * 2019-07-16 2019-10-22 复旦大学 A kind of black phosphorus/ZnIn2S4Composite visible light catalyst and preparation method thereof
CN110508291A (en) * 2019-09-02 2019-11-29 中国矿业大学 A kind of Au-ZnIn2S4The preparation method of nano-array electrode photocatalysis fixed nitrogen material
CN111054394A (en) * 2019-12-26 2020-04-24 江苏大学 P-n heterojunction photocatalyst and preparation method and application thereof
CN111298809A (en) * 2020-02-17 2020-06-19 中国矿业大学 ZnIn rich in surface S vacancies2S4Preparation method of nanosheet array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
陈亚杰等: "分级花状ZnIn_2S_4微球的可控合成及可见光分解水制氢性能研究", 《黑龙江大学自然科学学报》, vol. 32, no. 01, 25 February 2015 (2015-02-25), pages 75 - 83 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113070074A (en) * 2021-03-31 2021-07-06 青岛大学 Ti3C2-MXene/ZnIn2S4Preparation method and application of composite photocatalyst
CN114606527A (en) * 2022-04-06 2022-06-10 齐鲁工业大学 One-dimensional defective iron oxide nanorod visible light anode and preparation method and application thereof
CN114602509A (en) * 2022-04-13 2022-06-10 青岛科技大学 S-rich defect ZnIn2S4/In2Se3Heterojunction photocatalyst and application
CN114602509B (en) * 2022-04-13 2023-08-18 青岛科技大学 S-rich defect ZnIn 2 S 4 /In 2 Se 3 Heterojunction photocatalyst and application thereof
CN115090299A (en) * 2022-07-25 2022-09-23 陕西科技大学 ZnIn with sulfur defect 2 S 4 Preparation method of photocatalyst and application of photocatalyst in degrading antibiotics

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