CN111786650A - 体声波谐振器及其制造方法和滤波器、射频通信系统 - Google Patents
体声波谐振器及其制造方法和滤波器、射频通信系统 Download PDFInfo
- Publication number
- CN111786650A CN111786650A CN201910272282.3A CN201910272282A CN111786650A CN 111786650 A CN111786650 A CN 111786650A CN 201910272282 A CN201910272282 A CN 201910272282A CN 111786650 A CN111786650 A CN 111786650A
- Authority
- CN
- China
- Prior art keywords
- layer
- top electrode
- resonance
- bottom electrode
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 238000004891 communication Methods 0.000 title claims abstract description 11
- 239000000758 substrate Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 64
- 230000008569 process Effects 0.000 claims description 53
- 238000005530 etching Methods 0.000 claims description 46
- 230000002093 peripheral effect Effects 0.000 claims description 38
- 239000007772 electrode material Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 5
- 230000000994 depressogenic effect Effects 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000003814 drug Substances 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- 230000003071 parasitic effect Effects 0.000 abstract description 19
- 239000010410 layer Substances 0.000 description 350
- 239000000463 material Substances 0.000 description 37
- 239000010408 film Substances 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000206 photolithography Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000009467 reduction Effects 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 239000010948 rhodium Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000010295 mobile communication Methods 0.000 description 3
- 229910052762 osmium Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052702 rhenium Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- -1 etc.) Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/462—Microelectro-mechanical filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
- H03H9/547—Notch filters, e.g. notch BAW or thin film resonator filters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H2009/155—Constructional features of resonators consisting of piezoelectric or electrostrictive material using MEMS techniques
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910272282.3A CN111786650A (zh) | 2019-04-04 | 2019-04-04 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
JP2021525825A JP7138988B2 (ja) | 2019-04-04 | 2019-09-10 | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム |
PCT/CN2019/105091 WO2020199507A1 (zh) | 2019-04-04 | 2019-09-10 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
US17/449,836 US12009803B2 (en) | 2019-04-04 | 2021-10-04 | Bulk acoustic wave resonator, filter and radio frequency communication system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910272282.3A CN111786650A (zh) | 2019-04-04 | 2019-04-04 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN111786650A true CN111786650A (zh) | 2020-10-16 |
Family
ID=72664463
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201910272282.3A Pending CN111786650A (zh) | 2019-04-04 | 2019-04-04 | 体声波谐振器及其制造方法和滤波器、射频通信系统 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7138988B2 (ja) |
CN (1) | CN111786650A (ja) |
WO (1) | WO2020199507A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115241622A (zh) * | 2021-04-23 | 2022-10-25 | 诺思(天津)微系统有限责任公司 | 谐振器、滤波器及电子设备 |
CN115498975A (zh) * | 2022-11-16 | 2022-12-20 | 迈感微电子(上海)有限公司 | 一种薄膜体声波谐振器以及滤波器 |
WO2024067087A1 (zh) * | 2022-09-29 | 2024-04-04 | 常州承芯半导体有限公司 | 体声波谐振装置的形成方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113839640A (zh) * | 2021-07-16 | 2021-12-24 | 常州承芯半导体有限公司 | 体声波谐振装置及其形成方法、滤波装置及射频前端装置 |
WO2023157798A1 (ja) * | 2022-02-15 | 2023-08-24 | 株式会社村田製作所 | 弾性波装置 |
CN115996038B (zh) * | 2022-12-26 | 2023-08-22 | 北京芯溪半导体科技有限公司 | 一种滤波器、多工器以及通信设备 |
CN116111966B (zh) * | 2023-02-09 | 2024-03-29 | 上海集成电路材料研究院有限公司 | 一种滤波器、体声波谐振器结构及其制作方法 |
CN116032236B (zh) * | 2023-02-15 | 2023-06-06 | 成都频岢微电子有限公司 | 一种体声波耳形通道谐振器 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108123695A (zh) * | 2016-11-30 | 2018-06-05 | 三星电机株式会社 | 体声波谐振器 |
CN108336982A (zh) * | 2017-01-17 | 2018-07-27 | 三星电机株式会社 | 体声波谐振器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006340256A (ja) * | 2005-06-06 | 2006-12-14 | Toshiba Corp | 薄膜圧電共振器及びその製造方法 |
US7561009B2 (en) * | 2005-11-30 | 2009-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator (FBAR) devices with temperature compensation |
JP2009290367A (ja) * | 2008-05-27 | 2009-12-10 | Panasonic Electric Works Co Ltd | Baw共振装置およびその製造方法 |
US9035538B2 (en) * | 2011-11-02 | 2015-05-19 | Nihon Dempa Kogyo Co., Ltd. | Piezoelectric vibrating piece and piezoelectric device |
KR101856060B1 (ko) * | 2011-12-01 | 2018-05-10 | 삼성전자주식회사 | 체적 음향 공진기 |
CN103532516B (zh) * | 2013-08-05 | 2017-10-24 | 天津大学 | 体波谐振器及其制造方法 |
CN105680813B (zh) * | 2016-02-25 | 2018-12-07 | 锐迪科微电子(上海)有限公司 | 一种薄膜体声波谐振器及其制造方法 |
US10256788B2 (en) * | 2017-03-31 | 2019-04-09 | Avago Technologies International Sales Pte. Limited | Acoustic resonator including extended cavity |
-
2019
- 2019-04-04 CN CN201910272282.3A patent/CN111786650A/zh active Pending
- 2019-09-10 JP JP2021525825A patent/JP7138988B2/ja active Active
- 2019-09-10 WO PCT/CN2019/105091 patent/WO2020199507A1/zh active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108123695A (zh) * | 2016-11-30 | 2018-06-05 | 三星电机株式会社 | 体声波谐振器 |
CN108336982A (zh) * | 2017-01-17 | 2018-07-27 | 三星电机株式会社 | 体声波谐振器 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115241622A (zh) * | 2021-04-23 | 2022-10-25 | 诺思(天津)微系统有限责任公司 | 谐振器、滤波器及电子设备 |
CN115241622B (zh) * | 2021-04-23 | 2024-05-03 | 诺思(天津)微系统有限责任公司 | 谐振器、滤波器及电子设备 |
WO2024067087A1 (zh) * | 2022-09-29 | 2024-04-04 | 常州承芯半导体有限公司 | 体声波谐振装置的形成方法 |
CN115498975A (zh) * | 2022-11-16 | 2022-12-20 | 迈感微电子(上海)有限公司 | 一种薄膜体声波谐振器以及滤波器 |
Also Published As
Publication number | Publication date |
---|---|
JP7138988B2 (ja) | 2022-09-20 |
WO2020199507A1 (zh) | 2020-10-08 |
JP2022507325A (ja) | 2022-01-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN111786644B (zh) | 体声波谐振器及其制造方法和滤波器、射频通信系统 | |
CN111786650A (zh) | 体声波谐振器及其制造方法和滤波器、射频通信系统 | |
US11005448B2 (en) | Film bulk acoustic wave resonators and fabrication methods thereof | |
CN111786649B (zh) | 体声波谐振器及其制造方法和滤波器、射频通信系统 | |
CN112039460B (zh) | 薄膜体声波谐振器及其制作方法 | |
JP7130841B2 (ja) | 薄膜バルク音響波共振器及びその製造方法 | |
JP7339694B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
CN112039475A (zh) | 薄膜体声波谐振器及其制造方法和滤波器、射频通信系统 | |
CN114070223A (zh) | 薄膜体声波谐振器及其制造方法 | |
CN111786654B (zh) | 体声波谐振器及其制造方法和滤波器、射频通信系统 | |
JP7194474B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
CN111786652B (zh) | 体声波谐振器及其制造方法和滤波器、射频通信系统 | |
US12009803B2 (en) | Bulk acoustic wave resonator, filter and radio frequency communication system | |
JP7199758B2 (ja) | バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム | |
CN112311353A (zh) | 一种牢固安置型体声波谐振器及其制造方法 | |
JP7251837B2 (ja) | 薄膜バルク音響波共振器およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20201016 |
|
RJ01 | Rejection of invention patent application after publication |