CN111785814A - Substrate and processing method thereof, light-emitting diode and manufacturing method thereof - Google Patents
Substrate and processing method thereof, light-emitting diode and manufacturing method thereof Download PDFInfo
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- CN111785814A CN111785814A CN202010670939.4A CN202010670939A CN111785814A CN 111785814 A CN111785814 A CN 111785814A CN 202010670939 A CN202010670939 A CN 202010670939A CN 111785814 A CN111785814 A CN 111785814A
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- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
Abstract
The invention provides a substrate and a processing method thereof, a light-emitting diode and a manufacturing method thereof, wherein the substrate is scanned in an asymmetric orientation by determining the asymmetric surface type and the asymmetric orientation presented by the substrate, modified spots are formed in the substrate, the scanning lines in the same direction are enabled to be parallel to each other by adjusting the spacing distance of the scanning lines in the asymmetric direction, the modified spots with different spacing distances are generated in the asymmetric direction, the stress of the substrate is changed by forming the modified spots, the stress distribution of the whole substrate is uniform, different bending values are generated in different directions, finally the bending amplitude and the bending direction of the substrate in each radial direction tend to be consistent, and the surface type of the substrate converges to be a symmetric surface type. The symmetrical substrate is beneficial to improving the convergence of the wavelength of the subsequent epitaxial layer, so that the yield of the device is greatly improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a substrate and a processing method thereof, a light-emitting diode and a manufacturing method thereof.
Background
In the manufacturing process of semiconductor devices, it is generally necessary to perform the growth of an epitaxial layer by means of a growth substrate for which substrate warpage/bowing is the most important factor affecting epitaxial uniformity. For example, a sapphire substrate, which is usually used as a growth substrate of a GaN epitaxial layer, may cause uneven stress to the substrate during the machining process of the sapphire substrate, thereby causing the substrate to be distorted; for example: in the multi-line cutting process, because the sapphire is hard, the diamond line is subjected to large cutting resistance, so that the diamond line shakes and deforms, and the positions of two side lines of the substrate are asymmetrical, so that the substrate is stressed unevenly and is twisted; in the grinding process, grinding particles are gradually reduced along with the time, and the pressure of the particles with different sizes on the substrate is different, so that the residual stress of the substrate is different; after single-side polishing, the final substrate has different roughness on both sides, which leads to different stress conditions on both sides of the substrate, and the distortion is further worsened. The bending/twisting of the substrate causes the substrate to assume an asymmetric profile, and a non-planar substrate may result in a reduced convergence of the wavelength of the subsequently formed epitaxial layer. The uniformity of the epitaxial layer wavelength directly affects the yield of the device in this later stage.
In the prior art, the warpage shape or warpage amount of the substrate is generally controlled by controlling the flat sheet processing process of the substrate, such as the processes of growing crystal, cutting, grinding, annealing, copper polishing and polishing. However, such a method cannot completely condense the substrate into a plane of symmetry type. Therefore, it is necessary to provide a method capable of converging the substrate into the symmetrical plane type efficiently.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method of processing an asymmetric planar substrate, a light emitting diode and a method of manufacturing the same. Firstly, determining an asymmetric surface type presented by a substrate, determining an asymmetric orientation of the asymmetric surface type, scanning the substrate in the asymmetric orientation, and forming a modified point in the substrate so that the substrate converges from the asymmetric surface type to the symmetric surface type. A substrate exhibiting a plane of symmetry, such as a bowl, that facilitates wavelength uniformity of subsequently formed epitaxial layers.
To achieve the above and other related objects, an embodiment of the present invention provides a method of processing a substrate exhibiting an asymmetric profile: the method comprises the following steps:
providing a substrate and determining an asymmetric surface type presented by the substrate;
determining an asymmetric orientation of the asymmetric profile and measuring a degree of curvature of the substrate in the asymmetric orientation;
and in the asymmetric orientation, performing laser scanning on the substrate along a scanning line, and forming a modified spot in the substrate so as to make the substrate converge from an asymmetric plane to a symmetric plane.
Optionally, in the asymmetric orientation, laser scanning the substrate along a scanning line, further comprising:
determining a target curvature bow0 of the substrate from the curvature of the substrate in the asymmetric orientation;
calculating a curvature difference value A bow of the target curvature for a curvature value of the base in the asymmetric orientation;
determining the scanning depth of laser scanning on the substrate according to the bending degree difference value delta bow;
and adjusting the spacing between the scanning lines in different orientations according to the bending degree difference delta bow.
Optionally, the processing method further includes: the scanning lines in the same orientation are adjusted to be parallel to each other.
Optionally, the processing method further includes: the distances between the scanning lines in the same orientation are adjusted to be the same, and the distances between the scanning lines in different orientations are different.
Optionally, determining an orientation of an asymmetry of the asymmetric profile and measuring a degree of curvature of the substrate in the orientation of the asymmetry, further comprising:
determining a first orientation and a second orientation of the asymmetric face, the first orientation and the second orientation being intersecting asymmetric orientations;
measuring bow 1a first curvature of the substrate in the first orientation;
measuring a second curvature bow2 of the substrate in the second orientation;
a first tortuosity difference Δ bow1 is calculated for the first tortuosity and the target tortuosity for the substrate in the first orientation and a second tortuosity difference Δ bow2 is calculated for the substrate in the second orientation.
Optionally, in the asymmetric orientation, laser scanning the substrate along a scanning line, further comprising:
determining the scanning depth of laser scanning on the substrate according to the first curvature difference delta bow1 and the second curvature difference delta bow 2;
adjusting a first separation between scan lines in the first orientation based on a first difference in bow Δ bow1 in the first orientation;
adjusting a second spacing between scan lines in the second orientation based on a second difference in bow Δ bow2 in the second orientation.
Optionally, the scanning depth of the laser scanning on the substrate, which is determined according to the bending degree difference Δ bow, is any depth within a range of 2% -98% of the thickness of the substrate.
Optionally, the substrate exhibits an asymmetric profile comprising any one of the following profiles:
the substrates are in the same bending direction but different in bending degree in the asymmetric direction;
a penetration type in which the substrate is bent in one direction and is not bent in another direction asymmetrical to the one direction;
saddle-shaped, the substrate bending in opposite directions in an asymmetrical direction.
Optionally, the modified spots are distributed along the first orientation and the second orientation, and form a grid-like distribution within the substrate.
Optionally, the modified spots comprise voids formed in the substrate.
Optionally, the modified sites comprise voids formed in the substrate, the voids forming trenches in the substrate.
Another embodiment of the present invention provides a method for preparing a light emitting diode, comprising the steps of:
providing a substrate, and determining an asymmetric surface type presented by the substrate;
determining an asymmetric orientation of the asymmetric profile and measuring a degree of curvature of the substrate in the asymmetric orientation;
in the asymmetric orientation, laser scanning is carried out on the substrate along a scanning line, and a modified point is formed in the substrate so that the substrate is converged from an asymmetric surface type to a symmetric surface type;
forming a light emitting structure over the substrate converging to a plane of symmetry.
Optionally, forming a light emitting structure over the substrate comprises:
forming a first semiconductor layer over the substrate;
forming a multiple quantum well over the first semiconductor layer;
forming a second semiconductor layer over the multiple quantum wells of opposite conductivity to the first semiconductor layer.
Optionally, in the asymmetric orientation, laser scanning the substrate along a scanning line, further comprising:
determining a target curvature bow0 of the substrate from the curvature of the substrate in the asymmetric orientation;
calculating a curvature difference value A bow of the target curvature for a curvature value of the base in the asymmetric orientation;
determining the scanning depth of laser scanning on the substrate according to the bending degree difference value delta bow;
and adjusting the spacing between the scanning lines in different orientations according to the bending degree difference delta bow.
Optionally, the method for preparing the light-emitting diode further comprises: the scanning lines in the same orientation are adjusted to be parallel to each other.
Optionally, the method further comprises: the intervals between the scanning lines in the same orientation are adjusted to be the same, and the intervals between the scanning lines in different orientations are different.
Another embodiment of the present invention provides a substrate for epitaxial growth, the substrate having a first surface and a second surface, the substrate having a plurality of modified dots formed therein by multiphoton absorption, the modified dots forming a grid-like distribution in two different radial directions of the substrate in a plan view direction along the first surface of the substrate.
A further embodiment of the present invention provides a light emitting diode, including a substrate and a light emitting structure formed over the substrate, where the substrate is the substrate for epitaxial growth provided by the present invention.
As described above, the substrate and the processing method thereof, the light emitting diode and the manufacturing method thereof provided by the present invention have at least the following beneficial effects:
in the method of the invention, first the asymmetric surface type assumed by the substrate is determined, and the asymmetric orientation of said asymmetric surface type is determined, the substrate is scanned in the asymmetric orientation, modified spots are formed in the substrate such that said substrate converges from the asymmetric surface type to a symmetric surface type, e.g. a bowl type. By adjusting the spacing distance of the scanning lines in the asymmetric direction, the scanning lines in the same direction are parallel to each other, and different bending values are generated in the asymmetric direction due to different spacing distances of the scanning lines in the asymmetric direction, so that the bending degree of the substrate in each direction tends to be consistent, and the substrate surface type is converged into a symmetric surface type (for example, a concentric circle or bowl type). The epitaxial layer grows on the substrate with the convergent symmetrical plane type, so that the wavelength dispersion of the epitaxial layer is reduced, namely, the wavelength of the epitaxial layer is converged, the convergence of the wavelength of the epitaxial layer is improved, the yield of subsequent devices is directly influenced, and the yield of the devices is greatly improved.
In addition, the invention adopts laser to irradiate the substrate, and according to the type, the size and the like of the substrate, parameters such as the spot size, the pulse wavelength, the power, the pulse time, the irradiation (or scanning) time and the like of the laser pulse are adjusted, and the depth of the modified spot (a hollow hole or a bubble) in the substrate and the size of the modified spot are determined. The control process is easy to operate and the control precision is high. In addition, the cost of laser irradiation is relatively low, and thus the cost of substrate processing can be reduced.
The substrate for epitaxy and the semiconductor device of the present invention can be processed by the above method, and thus have the same advantageous effects.
Drawings
Fig. 1a to 1c are schematic views showing the bending distribution of substrates of different surface types distorted by the unevenness of the stress distribution, which are measured by the flatness measuring instrument.
Fig. 1d shows a schematic view of the bending distribution of a planar substrate with a uniform stress distribution as tested by a flatness measuring instrument.
Fig. 2 shows a flow chart of a method of manufacturing a substrate for epitaxy provided for different embodiments of the present invention.
Fig. 3a to 3c show schematic views of a determined asymmetric orientation for a substrate of the asymmetric surface type.
FIG. 4 is a graph showing the relationship between the substrate curvature before and after laser scanning and the depth of focus of the laser pulse at a constant scan line spacing.
Fig. 5 is a graph showing the relationship between the scan line pitch and the bending of the substrate under a certain depth of focus of the laser pulse.
Fig. 6 is a schematic view showing scanning lines for scanning the concentric elliptical surface type substrate shown in fig. 3 a.
Fig. 7 is a schematic view showing a scanning line for scanning the substrate of the penetration type shown in fig. 3 b.
FIG. 8 is a schematic view of a scan line for scanning the saddle-shaped substrate shown in FIG. 3 c.
Fig. 9 is a schematic view showing a modified spot formed in the substrate as viewed from the side of the substrate.
Fig. 10 is a box plot showing the ratio of warp to bend for a substrate that has not been laser scanned and for a substrate that has been laser scanned in the method of the present invention.
Fig. 11 is a schematic flow chart illustrating a method for manufacturing a semiconductor device according to another embodiment of the present invention.
Figure 12 is a graph showing the mean and standard deviation of the bow of a substrate made by the method of the present invention versus a prior art substrate that has not been scanned by a laser at various stages of epitaxial layer growth.
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity, position relationship and proportion of the components in actual implementation can be changed freely on the premise of implementing the technical solution of the present invention, and the layout form of the components may be more complicated.
The preparation of the substrate is a very important link in the manufacturing process of the semiconductor device, and the yield of the substrate directly influences the performance of the device. Since the substrate is usually a very thin sheet, during the machining process of the substrate, the substrate inevitably has defects of bending, twisting, warping and the like due to uneven stress distribution, and the bending, twisting or warping of the substrate directly affects the subsequent epitaxial film forming quality.
The uneven stress distribution of the substrate causes the substrate to bend, warp or twist in different directions, and the degree of bending and/or the direction of bending in different directions are different, so that the substrate presents an asymmetric surface shape. If the stress distribution of the substrate is relatively uniform, the bending direction and the bending degree of the substrate in each radial direction tend to be the same, and the substrate presents a symmetrical surface type. The substrate with the symmetrical surface has better bending convergence, and when the substrate is used for epitaxial film formation, the substrate is beneficial to the wavelength convergence of an epitaxial film formation layer.
As shown in fig. 1a to 1d, taking a sapphire substrate as an example, the substrate has a first surface and a second surface opposite to the first surface, two perpendicular directions extending in a radial direction of the substrate in a transverse direction and a longitudinal direction are defined, and a flatness measuring instrument is used for testing the curvature distribution of the substrate from one surface of the substrate, and the sapphire substrate generally has four different surface types. As shown in fig. 1a, if the peripheral region of the substrate is curved toward the first surface in the lateral direction and curved toward the second surface in the longitudinal direction, the substrate takes a saddle-like shape, and thus such a substrate profile is generally called saddle-shaped; as shown in fig. 1b, if a part of the peripheral area of the substrate in the lateral direction is all curved to the same surface (i.e., the first surface or the second surface), and a part of the peripheral area of the substrate in the longitudinal direction is flat and free from warpage, the substrate profile exhibiting such a curved type is generally called a through type; as shown in fig. 1c, if the peripheral region of the substrate is curved toward the same surface (i.e., the first surface or the second surface) in both the longitudinal direction and the lateral direction, and the degree of curvature in the lateral direction is greater than that in the longitudinal direction at a position at the same distance from the center of the substrate, the substrate surface shape assumes a concentric ellipse shape.
The substrate surface shapes shown in fig. 1a to 1c are collectively called asymmetric surface shapes, because the substrate surface shapes shown in fig. 1a to 1c are different in the bending direction and/or the bending degree in different radial directions of the substrate due to the uneven stress distribution, so that the substrate which should be completely symmetric in each radial direction of the substrate exhibits asymmetric characteristics in some radial directions.
The substrate shown in fig. 1d has a relatively uniform stress distribution, and the substrate bends to almost the same extent at radial positions in the peripheral region at the same distance from the center of the substrate and all bends toward the same surface (i.e., the first surface or the second surface), and such substrate bends to assume a face shape of a concentric circle or a bowl shape. Since the stress distribution of the concentric circular substrate is relatively uniform, the bending direction of the peripheral region in each radial direction is the same, and the bending degree tends to be the same, and the substrate is still substantially symmetrical in each radial direction, the plane shape can be called a symmetrical plane shape. The concentric circular plane type substrate has better bending convergence, and when the substrate is used for epitaxial film formation, the substrate is beneficial to the wavelength convergence of an epitaxial film formation layer.
In view of the above-described characteristics of substrate warpage, the present embodiment is directed to providing a substrate processing method capable of improving the surface profile convergence of a substrate.
As shown in fig. 1, in an embodiment of the present invention, a method for manufacturing an epitaxial substrate of the present invention includes the steps of:
s01: providing a substrate and determining an asymmetric surface type presented by the substrate;
s02: determining an asymmetric orientation of the asymmetric profile and measuring a curvature of the substrate in the asymmetric orientation;
s03: and in the asymmetric orientation, performing laser scanning on the substrate along a scanning line, and forming a modified spot in the substrate so as to make the substrate converge from an asymmetric plane to a symmetric plane.
In this embodiment, the substrate may be any substrate used in semiconductor manufacturing, for example, a substrate suitable for epitaxial layer growth. In an alternative embodiment, the substrate is a substrate capable of absorbing laser light and forming modified spots therein to improve stress distribution, such as a sapphire substrate. The sapphire substrate may have a thickness of about 50 μm to about 20mm and may have a diameter of about 4 inches to about 18 inches.
Taking a sapphire substrate as an example, the substrate is provided with a first surface and a second surface, and the curvature distribution of the substrate is tested by using a flatness measuring instrument from one surface of the substrate, so that the surface type presented by the substrate is determined.
In an alternative embodiment of this embodiment, as shown in fig. 3a, the peripheral region of the substrate is curved toward the same surface (i.e. the first surface or the second surface) in two different radial directions of the substrate surface, but the substrate is curved to different degrees in the two different radial directions at the same distance from the center of the substrate, and at this time, the substrate has a concentric ellipse shape and an asymmetric plane shape.
After determining the profile of the substrate, two asymmetric orientations are determined in which the substrate exhibits asymmetric bending. For the concentric ellipsoidal substrate shown in fig. 3a, a first orientation 101 and a second orientation 102 of the ellipsoidal substrate are determined, and the substrate is bent toward the same surface (i.e., the first surface or the second surface) in both the first orientation 101 and the second orientation 102, but is bent to a different degree at the same distance from the center of the substrate.
After the above-described asymmetric orientation of the substrate is determined, the warpage values of the substrate in the asymmetric upward directions are respectively calculated. With reference to fig. 3a, let us say, the bending bow of the substrate in the first orientation 101 is measured1And a degree of curvature bow of the substrate in the second orientation 1022。
After determining the curvature of the substrate in the asymmetric upward direction, the substrate is scanned with laser, in this embodiment, pulsed laser is selected to scan the substrate. A single pulse with a certain spot size can punch a modified spot of a certain size and depth on a specific material, the modified spot can be a hollow or recast spot, and the hollow or recast spot overlapped with each other forms a groove line or recast line in the substrate. The size of the modified spot and the depth in the substrate are related to the hardness and melting point of the material and the spot size, energy and wavelength of the single pulse. By adjusting the pulse frequency and the scanning speed, the width and the depth of the modified spots (or the groove lines or recast lines formed by the modified spots) can be regulated and controlled. The parameters of the laser pulses used in this example are described in table 1 below:
TABLE 1 parameters of laser pulses for scanning a substrate
| Range of | Time of pulse | Wavelength (nm) | Power (W) | Frequency (kHz) | Spot size (μm) | Scanning speed (mm/s) |
| Min | 1as | 200 | 0.1 | 1 | 1 | 10 |
| Max | 1ms | 5000 | 100 | 1000 | 105 | 10000 |
According to the parameters such as the type and thickness of the substrate, the substrate is scanned by selecting appropriate parameters within the laser parameters shown in table 1. In a preferred embodiment, the substrate is laser scanned from a first surface of the substrate.
As shown in fig. 4, a graph of the relationship between the degree of curvature of the substrate before and after laser scanning and the depth of focus of the laser pulse, where the depth of focus of the laser pulse is defined as the depth of the focal point of the laser pulse from the first surface of the substrate, is shown under the condition that the scanning line pitch of the laser pulse is constant. FIG. 4 shows the change in the degree of curvature of the substrate before and after laser scanning with the depth of focus of the laser pulses at scanning line pitches of 100 μm and 500 μm, respectively. As can be seen from fig. 4, the greater the distance of the depth of focus of the laser pulses from the mid-depth plane of the substrate at a given scan line spacing, the greater the change in the degree of curvature of the substrate. From the curve shown in fig. 4, an appropriate depth of focus of the laser pulse can be selected, in case the substrate profile and the curvature are determined. In this embodiment, with respect to a sapphire substrate, the depth increases from the first surface toward the second surface with the first surface of the sapphire substrate being a surface having a depth of 0. In a preferred embodiment, the laser pulse parameters may be selected to be appropriate so that the depth of focus of the laser pulse is in the range of 2% to 98% of the substrate thickness.
In addition, as can be seen from fig. 4, the change in the curvature of the substrate is related to the spacing between the scan lines of the laser scan, given a constant depth of focus of the laser pulses. Referring to fig. 5, a graph of scan line pitch p versus substrate bow for a given depth of focus of the laser pulses is shown. As can be seen from fig. 5, when the depth of focus of the laser pulse is constant, the larger the pitch p between the scanning lines is, the smaller the change in the curvature of the substrate before and after the laser scanning is, the smaller the pitch p between the scanning lines is, and the larger the change in the curvature of the substrate before and after the laser scanning is.
As shown in FIG. 3a, the substrate is defined to exhibit an asymmetric profile and asymmetryOrientation, and the curvature of the substrate after the asymmetric upward curvature, determine the curvature of the symmetry plane into which the substrate eventually converges. As shown above, the concentric circular substrate has relatively uniform stress distribution, the peripheral region has the same bending direction and the same bending degree in each radial direction, and the substrate has better convergence of bending, which is beneficial to the wavelength convergence of the epitaxial film formation layer when the substrate is used for epitaxial film formation. Therefore, the concentric circular surface type substrate is set as the target surface type of the asymmetric surface type substrate. And determining a target curvature bow for the target surface type0。
The degree of curvature bow of the substrate in the first orientation 101 is then calculated1And a target curvature bow0A first difference in tortuosity a bow between1And a degree of curvature bow of the substrate in the second orientation 1022And a target curvature bow0A second difference in bending Δ bow between2. Then, based on the relationship between the substrate bending and the depth of focus of the laser pulses and the pitch p between the scan lines as shown in fig. 4 and 5, a difference Δ bow is determined according to the first bending1And a second difference in tortuosity Δ bow2The depth of focus of the laser pulses is determined and the pitch p between the scan lines is adjusted.
As described above, since the substrate shown in FIG. 3a exhibits a concentric ellipsoidal shape, its first difference in curvature Δ bow1And a second difference in tortuosity Δ bow2Is different. The scan depth of the laser pulses is determined from the relationship between the degree of substrate bending and the depth of focus of the laser pulses and the pitch p between the scan lines as shown in fig. 4 and 5. In an alternative embodiment, the depth of focus of the laser pulse is in the range of 2% to 98% of the thickness of the substrate 100, more preferably, the depth of focus of the laser pulse is in the range of 10% to 40% of the thickness of the substrate or at a location in the range of 60% to 96% of the thickness (where the location of the range of 10% to 40% of the thickness is closer to the first surface of the substrate for epitaxial growth relative to the location of the range of 60% to 96% of the thickness). In a preferred embodiment of the present embodiment, the scanning depth is fixed while scanning the first orientation 101 and the second orientation 102 of the substrateAnd (6) changing. After the depth of focus of the laser pulses is determined, the spacing between the scan lines in the first orientation 101 and the second orientation 102 is adjusted. As shown in fig. 6, a schematic view of a scanning line for scanning the concentric elliptical surface type substrate shown in fig. 3 a. As shown in fig. 6, the scan lines are line segments extending along the first and second curved lines, respectively, and form grid lines, and the scan lines are parallel to each other in the same orientation (first orientation or second orientation). In the first orientation 101, the scan lines have a first spacing D11 between them, in the second orientation, the scan lines have a second spacing D12 between them, and D11 is different from D12. As shown in FIG. 3a, a first curvature bow of the substrate in a first orientation 1011Less than a second degree of curvature bow in second orientation 1022In a more preferred embodiment, the target tortuosity value bow0 is greater than bow2I.e. bow1≤bow2≤bow0. Accordingly, the first difference in curvature Δ bow of the substrate1Greater than a second difference in curvature Δ bow2. As shown in fig. 5, it can be determined at this time that the spacing D11 between scan lines in the first orientation of the substrate is less than the spacing D12 between scan lines in the second orientation. It should be noted that the first difference in curvature Δ bow is described above1And a second difference in curvature Δ bow2Are absolute values of the difference in tortuosity.
The substrate is scanned in the first orientation and the second orientation from the first surface of the substrate with the scan lines shown in fig. 6, so that the curvature of the scanned substrate in the first orientation and the curvature in the second orientation tend to be the same, and the entire substrate converges to a concentric circular shape. As shown in fig. 9, after the substrate is scanned with the laser, modified spots 500 are formed inside the substrate, and the modified spots may be formed in a circular shape, an elliptical shape, a polygonal shape, or any combination thereof. The formation shape and type of the modified spot may be changed and/or controlled by controlling the wavelength, pulse time, pulse shape, etc. of the laser. The modified spots 500 shown in fig. 9 may be polycrystals (may also be referred to as thermally modified regions) or voids formed inside the substrate. Taking the cavity as an example, a plurality of cavities are formed in the substrate, and when the size of the cavity is larger than the spacing distance between adjacent cavities, the adjacent cavities overlap to form a groove in the substrate.
After the laser scanning shown in table 1, the formed modified spots 500 are distributed in the thickness range of 2% to 98% of the thickness of the substrate 100, and the size of the formed modified spots 500 is 1 μm to 5 mm. In a preferred embodiment of the present embodiment, the above-described modified site is formed in a thickness range of 10% to 40% of the thickness of the substrate or at a position in a thickness range of 60% to 96% (wherein the position in the thickness range of 10% to 40% is closer to the first surface of the substrate for epitaxial growth than the position in the thickness range of 60% to 96%). In a more preferred embodiment of this embodiment, in the sapphire substrate shown in fig. 3a, the modified spots or grooves are formed in a first orientation and a second orientation, and a grid-like distribution is formed inside the substrate.
In another alternative embodiment of the present invention, as shown in fig. 3b, a portion of the peripheral region of the substrate is curved toward the first surface in one radial direction, and a portion of the peripheral region of the substrate is flat and free of warpage in the other radial direction, the substrate exhibiting an asymmetric through-type profile. Depending on the surface type of the substrate, the first orientation 201 is defined as the direction in which a portion of the peripheral region is curved towards the first surface of the substrate, and the second orientation 202 is defined as the direction in which a portion of the peripheral region is flat and free of warpage. Measuring a first curvature bow of the substrate in the first orientation 2011And a second curvature bow in a second orientation 2022. And determining a curvature of the symmetric concentric circular profile to which the substrate will eventually converge, i.e., a target curvature bow of the substrate, based on the profile of the substrate0And then calculating the difference between the first curvature and the target curvature and the difference between the second curvature and the target curvature respectively: first difference in curvature Δ bow1And a second difference in curvature Δ bow2. In a preferred embodiment, the target curvature is selected to be slightly less than second curvature bow for sapphire substrates exhibiting a through profile2I.e. such that Δ bow1＞Δbow2. It should also be noted that the first difference in curvature Δ bow is described above1And a second difference in curvature Δ bow2Are absolute values of the difference in tortuosity。
As described above, the relation A bow of the difference in bending of the substrate in the first orientation 201 and the second orientation 202 is determined1＞ Δbow2The depth of focus of the laser pulses is determined according to fig. 4, and in a preferred embodiment, in order to make the scanning process easier to control, the spacing of the scan lines in the first and second orientations is then determined according to the amount of change in substrate bending and the spacing between the scan lines as shown in fig. 5. For the transmissive substrate shown in this embodiment, the selected scan lines are as shown in fig. 7. As shown in fig. 7, the scan lines are line segments extending in a first orientation and a second orientation, respectively, the scan lines in the two orientations forming grid lines, the scan lines being parallel to each other in the first orientation, and the scan lines being also parallel to each other in the second orientation; but the separation D21 between scan lines in the first orientation is less than the separation D22 between scan lines in the second orientation.
The substrate having the transmissive surface type is scanned with laser light from the first surface of the substrate along the scanning line shown in fig. 7, and a modified spot 500 as shown in fig. 9 is formed inside the substrate, and the modified spot may be formed in a circular shape, an elliptical shape, or a polygonal shape, or any combination thereof. The shape and type of formation of the modified spot can be changed and/or controlled by controlling the wavelength, pulse time, pulse shape, etc. of the laser. Modified dots 500 may be polycrystalline (also referred to as thermally modified regions) or hollow formed within the substrate. Taking the cavity as an example, a plurality of cavities are formed in the substrate, and when the size of the cavity is larger than the spacing distance between adjacent cavities, the adjacent cavities overlap to form a groove in the substrate.
The modified spots 500 are also distributed in the thickness range of 2% to 98% of the thickness of the substrate 100, and the size of the modified spots 500 formed is 1 μm to 5 mm. In a preferred embodiment of the present embodiment, the above-described modified site is formed in a thickness range of 10% to 40% of the thickness of the substrate for growth or at a position in the thickness range of 60% to 96% (wherein the position in the thickness range of 10% to 40% is closer to the first surface of the substrate for epitaxial growth than the position in the thickness range of 60% to 96%). In the sapphire substrate of the through type shown in fig. 3b, the modified spots are formed at the position of 40% of the thickness of the substrate. The formed modified points or grooves are distributed along the first orientation and the second orientation, and are distributed in a grid shape in the substrate.
In another alternative embodiment of the present invention, as shown in FIG. 3c, the substrate is curved in one radial direction toward the second surface of the substrate and curved in a different radial direction toward the first surface of the substrate, the substrate assuming a saddle-shaped profile. According to the surface type of the substrate, as shown in fig. 3c, a direction in which the substrate is bent toward the second surface of the substrate is defined as a first orientation 301, and a direction in which the substrate is bent toward the first surface is defined as a second orientation 302. Measuring bow a first degree of curvature of the substrate in the first orientation 301, respectively1And a second degree of curvature bow in a second orientation 3022While simultaneously determining the target curvature bow of the symmetrical concentric circular shape to which the substrate will eventually converge0. In a preferred embodiment of this embodiment, the concentric circular shape into which the substrate eventually converges is defined as a concentric circular shape that curves toward the first surface of the substrate, the target curve bow0Near or slightly greater or slightly less than the curvature bow of the substrate in the second orientation2. Thus, a first curvature bow in the first orientation 301 is calculated1And a target curvature bow0Is a difference of first bending degree Δ bow1Second degree of curvature bow in second orientation 3022And a target curvature bow0Is a difference of first bending degree Δ bow2. As can be seen from the above, Δ bow1＞Δbow2. It should be noted that, since the substrate shown in fig. 3c is curved toward the second surface and the first surface of the substrate in the first orientation and the second orientation, respectively, it is defined that the degree of curvature curved toward the first surface is a positive value and the degree of curvature curved toward the second surface is a negative value. The first difference in curvature Δ bow described above1And a second difference in curvature Δ bow2Are the absolute values of the difference in tortuosity.
The depth of focus of the laser pulses is then determined according to fig. 4, and in a preferred embodiment, in order to make the scanning process easier to control, the same depth of focus of the laser pulses is selected in the first and second orientations. The spacing of the scan lines in the first and second orientations is then determined from the relationship between the degree of curvature of the substrate and the spacing between the scan lines as shown in figure 5. For the transmissive substrate shown in this embodiment, the selected scanning lines are as shown in fig. 8. As shown in fig. 8, the scan lines are line segments extending in a first orientation and a second orientation, respectively, the scan lines in the two orientations form grid lines, and in the first orientation, the scan lines are parallel to each other, and in the second orientation, the scan lines are also parallel to each other; but the separation D31 between scan lines in the first orientation is less than the separation D32 between scan lines in the second orientation.
A substrate having a saddle-shaped profile is scanned with laser light from the first surface of the substrate along a scanning line shown in fig. 8, and a modified spot 500 shown in fig. 9 is formed inside the substrate, and the modified spot may be formed in a circular shape, an elliptical shape, a polygonal shape, or any combination thereof. The shape and type of formation of the modified spot can be changed and/or controlled by controlling the wavelength, pulse time, pulse shape, etc. of the laser. Modified dots 500 may be polycrystalline (also referred to as thermally modified regions) or hollow formed within the substrate. Taking the cavity as an example, a plurality of cavities are formed in the substrate, and when the size of the cavity is larger than the spacing distance between adjacent cavities, the adjacent cavities overlap to form a groove in the substrate. The formed modified points or grooves are distributed along the first orientation and the second orientation, and are distributed in a grid shape in the substrate.
The modified spots 500 are also distributed in the thickness range of 2% to 98% of the thickness of the substrate 100, and the size of the modified spots 500 formed is 1 μm to 5 mm. In a preferred embodiment of the present embodiment, the above-described modified site is formed in a thickness range of 10% to 40% of the thickness of the substrate for growth or at a position in the thickness range of 60% to 96% (wherein the position in the thickness range of 10% to 40% is closer to the first surface of the substrate for epitaxial growth than the position in the thickness range of 60% to 96%). As described above, in the present invention, during the processing of the substrate, the substrate is scanned by fixing the focusing depth of the laser pulse and adjusting the spacing between the scanning lines in different orientations.
In order to verify the surface type of the converged sapphire substrate, as shown in fig. 10, a box plot of the ratio of the warp degree to the bow degree of the substrate without laser scanning and the substrate after laser scanning in the method of the present invention before epitaxial growth is shown, and as can be seen from fig. 10, the mean value of the warp degree/the bow degree of the untreated sapphire substrate is 3.18, and the standard deviation is 3.47; the mean value of the warp/bow of the sapphire substrate after the laser scanning processing described in this embodiment is 1.01, and the standard deviation is 0.04 (the warp and the bow are measured by a flatness measuring apparatus (e.g., a political GSS machine)).
The substrate having a warp to bow ratio range according to different surface types is shown in table 2 below:
TABLE 2 range of substrate profile and warp/bow
| Surface type | Concentric circle type | Saddle shape | Penetration type | Oval shape |
| Warp/bow | 1～1.5 | >2.5 | <1 | 1.5～2.5 |
Therefore, after the laser scanning in this embodiment, the mean value of the warp/bow of the sapphire substrate is between 1 and 1.5, that is, the substrate surface is concentric. And the standard deviation of the warp/bow of the substrate is as low as 0.04, and the convergence of the substrate profile is improved. The substrate is converged into a concentric circle shape and has high convergence, which is beneficial to improving the wavelength convergence of the subsequent epitaxial layer.
Another embodiment of the present invention provides a method for manufacturing a semiconductor device, as shown in fig. 11, including the steps of:
step S100: providing a substrate, and determining an asymmetric surface type presented by the substrate;
step S200: determining an asymmetric orientation of the asymmetric profile and measuring a degree of curvature of the substrate in the asymmetric orientation;
step S300: in the asymmetric orientation, laser scanning is carried out on the substrate along a scanning line, and a modified point is formed in the substrate so that the substrate is converged from an asymmetric surface type to a symmetric surface type;
step S400: and forming at least one semiconductor epitaxial layer on the first surface of the substrate.
The steps S100 to S300 are the same as the processing method of the substrate with an asymmetric surface according to the previous embodiment of the present invention, and are not repeated herein. In step S400, forming at least one epitaxial semiconductor layer over the first surface of the substrate includes:
forming a first semiconductor layer over a first surface of the substrate;
forming a multiple quantum well over the first semiconductor layer;
forming a second semiconductor layer of opposite conductivity to the first semiconductor layer on the multiple quantum well.
In an alternative embodiment, N number (N is 1000) of sapphire substrates are used for epitaxial growth, N/2 number of substrates are subjected to laser scanning processing through scanning lines shown in fig. 6 to 8, the rest N/2 number of substrates are not subjected to laser scanning processing, the N/2 number and the rest N/2 number of substrates simultaneously include four surface types shown in fig. 1a to 1d, then the mean value of curvature and the standard deviation of curvature STD of the N/2 number of sapphire substrates after laser scanning and the rest N/2 number of sapphire substrates without laser processing in different epitaxial growth stages are respectively measured, and the comparison graph of the obtained results is shown in fig. 12.
As can be seen from fig. 11, the mean values of the curvatures of the sapphire substrate treated by the method of the present invention and the untreated sapphire substrate at different stages of epitaxial growth are substantially the same, and there is no great difference. However, the standard deviation of the curvatures of the two are obviously different, for example, after the growth of the n-type GaN layer, the standard deviation STD of the curvatures of the sapphire substrate treated by the method of the embodiment is about 0.6, and the standard deviation of the curvatures of the untreated sapphire substrate is about 9.85; in the multiple quantum well growth process, the standard deviation STD of the curvature of the sapphire substrate processed by the method of the embodiment is about 1.21, and the standard deviation of the curvature of the untreated sapphire substrate is about 2.54; as can be seen from the comparison of the different epitaxial processes, the standard deviation of the curvature of the sapphire substrate processed by the method of this embodiment is significantly reduced in the epitaxial growth process, that is, the curvature of the sapphire substrate processed by the laser in this embodiment is significantly converged in the epitaxial growth process, compared to the standard deviation of the curvature of the untreated sapphire substrate.
To further verify the optimization of the wavelength standard deviation (STD) of the epitaxial layer formed on the substrate subsequently by the method of the present embodiment, the wavelength standard deviation of the wavelength of the epitaxy of different application products formed on the sapphire substrate processed by the method of the present invention was measured. As shown in table 3 below, the convergence increasing rate of the epitaxial wavelengths of different products, i.e., the decreasing amplitude of the wavelength standard deviation (assuming that the wavelength standard deviation STD1 of the epitaxial wavelength of each applied product formed on the sapphire substrate processed by the method of the present embodiment and the wavelength standard deviation STD2 of the epitaxial wavelength of each product formed on the sapphire substrate processed by the method of the present embodiment are ((STD2-STD 1)% 100%)/(STD 1)) is shown.
TABLE 3 reduction of the standard deviation of the wavelengths of the different products
As can be seen from fig. 12 and table 3 above, the stress generated by the modified spots 500 generated inside the substrate can effectively uniformize the stress distribution of the substrate, and improve the convergence of the substrate, so that the substrate converges into the concentric circular surface type shown in fig. 1 d. The concentric circular surface type substrate is beneficial to the wavelength convergence of the epitaxial layer, so that the standard deviation STD of the wavelength is reduced by nearly 11-25%.
As described above, the substrate and the processing method thereof, the light emitting diode and the manufacturing method thereof provided by the present invention have at least the following beneficial effects:
in the method of the invention, first the asymmetric surface type assumed by the substrate is determined, and the asymmetric orientation of said asymmetric surface type is determined, the substrate is scanned in the asymmetric orientation, modified spots are formed in the substrate such that said substrate converges from the asymmetric surface type to a symmetric surface type, e.g. a bowl type. By adjusting the spacing distance of the scanning lines in the asymmetric direction, the scanning lines in the same direction are parallel to each other, and different bending values are generated in the asymmetric direction due to different spacing distances of the scanning lines in the asymmetric direction, so that the bending degree of the substrate in each direction tends to be consistent, and the substrate surface type is converged into a symmetric surface type (for example, a concentric circle or bowl type). The epitaxial layer grows on the substrate with the convergent symmetrical plane type, so that the wavelength dispersion of the epitaxial layer is reduced, namely, the wavelength of the epitaxial layer is converged, the convergence of the wavelength of the epitaxial layer is improved, the yield of subsequent devices is directly influenced, and the yield of the devices is greatly improved.
In addition, the invention adopts laser to irradiate the substrate, and according to the type, the size and the like of the substrate, parameters such as the spot size, the pulse wavelength, the power, the pulse time, the irradiation (or scanning) time and the like of the laser pulse are adjusted, and the depth of the modified spot (a hollow hole or a bubble) in the substrate and the size of the modified spot are determined. The control process is easy to operate and the control precision is high. In addition, the cost of laser irradiation is relatively low, and thus the cost of substrate processing can be reduced.
The substrate for epitaxy and the semiconductor device of the present invention can be processed by the above method, and thus have the same advantageous effects.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which may be accomplished by those skilled in the art without departing from the spirit and scope of the present invention as set forth in the appended claims.
Claims (18)
1. A method of processing a substrate exhibiting an asymmetrical profile, comprising the steps of:
providing a substrate and determining an asymmetric profile exhibited by the substrate, the substrate having a first surface and a second surface;
determining an asymmetric orientation of the asymmetric profile and measuring a degree of curvature of the substrate in the asymmetric orientation;
and in the asymmetric orientation, performing laser scanning on the substrate along a scanning line, and forming a modified spot in the substrate so as to make the substrate converge from an asymmetric plane to a symmetric plane.
2. A method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 1 wherein the substrate is laser scanned along a scan line in the asymmetrical orientation, further comprising the steps of:
determining a target curvature bow of the substrate from the curvature of the substrate in the asymmetric orientation0；
Calculating a curvature difference value A bow of the target curvature for a curvature value of the base in the asymmetric orientation;
determining the scanning depth of laser scanning on the substrate according to the bending degree difference value delta bow;
and adjusting the spacing between the scanning lines in different orientations according to the bending degree difference delta bow.
3. The method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 1, further comprising: the scanning lines in the same orientation are adjusted to be parallel to each other.
4. The method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 1, further comprising: the distances between the scanning lines in the same orientation are adjusted to be the same, and the distances between the scanning lines in different orientations are different.
5. A method of processing a substrate presenting an asymmetric profile as claimed in claim 1, wherein the orientation of the asymmetry of the asymmetric profile is determined and the degree of curvature of the substrate in the asymmetric orientation is measured, further comprising the steps of:
determining a first orientation and a second orientation of the asymmetric face, the first orientation and the second orientation being intersecting asymmetric orientations;
measuring bow a first curvature of the substrate in the first orientation along the first surface1；
Measuring a second curvature bow of the substrate in the second orientation along the first surface2；
Calculating a first tortuosity difference Δ bow of the first tortuosity of the substrate in the first orientation and the target tortuosity1And a second difference in bow, Δ bow, of the substrate in the second orientation2。
6. The method of claim 5, wherein the substrate is laser scanned along a scan line in the asymmetric orientation, further comprising the steps of:
according to the first bending degree difference delta bow1And said second difference in curvature Δ bow2Determining a scanning depth for laser scanning of the substrate;
according to a first difference of curvature Δ bow in the first orientation1Adjusting a first pitch between scan lines in the first orientation;
according to a second difference of curvature Δ bow in the second orientation2Adjusting a second pitch between scan lines in the second orientation.
7. The method as claimed in claim 2 or 6, wherein the scanning depth of the laser scanning on the substrate is any depth in the range of 2-98% of the thickness of the substrate.
8. The method for processing a substrate having an asymmetric profile as claimed in claim 1, wherein the asymmetric profile presented by the substrate comprises any one of the following profiles:
the substrates are in the same bending direction but different in bending degree in the asymmetric direction;
a penetration type in which the substrate is bent in one direction and is not bent in another direction asymmetrical to the one direction;
saddle-shaped, the substrate bending in opposite directions in an asymmetrical direction.
9. The method according to claim 1, wherein the modified spots are distributed along the first orientation and the second orientation, and are distributed in a grid pattern inside the substrate.
10. The method of claim 1, wherein the modified spots comprise voids formed in the substrate.
11. The method of claim 1, wherein the modified spots comprise voids formed in the substrate, the voids forming trenches in the substrate.
12. A preparation method of a light-emitting diode is characterized by comprising the following steps:
providing a substrate, and determining an asymmetric surface type presented by the substrate;
determining an asymmetric orientation of the asymmetric profile and measuring a degree of curvature of the substrate in the asymmetric orientation;
in the asymmetric orientation, laser scanning is carried out on the substrate along a scanning line, and a modified point is formed in the substrate so that the substrate is converged from an asymmetric surface type to a symmetric surface type;
forming a light emitting structure over the substrate converging to a plane of symmetry.
13. The method of claim 12, wherein forming a light emitting structure over the substrate comprises:
forming a first semiconductor layer over the substrate;
forming a multiple quantum well over the first semiconductor layer;
forming a second semiconductor layer over the multiple quantum wells of opposite conductivity to the first semiconductor layer.
14. A method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 12 wherein the substrate is laser scanned along a scan line in the asymmetrical orientation, further comprising the steps of:
determining a target bow of the substrate from a bow of the substrate in the asymmetric orientationDegree bow0；
Calculating a curvature difference value A bow of the target curvature for a curvature value of the base in the asymmetric orientation;
determining the scanning depth of laser scanning on the substrate according to the bending degree difference value delta bow;
and adjusting the spacing between the scanning lines in different orientations according to the bending degree difference delta bow.
15. The method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 12, further comprising: the scanning lines in the same orientation are adjusted to be parallel to each other.
16. The method of processing a substrate exhibiting an asymmetrical profile as set forth in claim 12, further comprising: the distances between the scanning lines in the same orientation are adjusted to be the same, and the distances between the scanning lines in different orientations are different.
17. A substrate for epitaxial growth, the substrate having a first surface and a second surface, characterized in that the substrate has a plurality of modified spots formed therein by multiphoton absorption, the modified spots forming a grid-like distribution in two different radial directions of the substrate in a plan view direction along the first surface of the substrate.
18. A light-emitting diode comprising a substrate and a light-emitting structure formed over the substrate, wherein the substrate is the substrate for epitaxy of claim 17.
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