CN111781220A - Multifunctional synchronous radiation interference exposure experiment platform and experiment method - Google Patents

Multifunctional synchronous radiation interference exposure experiment platform and experiment method Download PDF

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CN111781220A
CN111781220A CN202010635450.3A CN202010635450A CN111781220A CN 111781220 A CN111781220 A CN 111781220A CN 202010635450 A CN202010635450 A CN 202010635450A CN 111781220 A CN111781220 A CN 111781220A
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multifunctional
synchrotron radiation
transmission grating
photodiode
exposure
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赵俊
梁兆峰
杨树敏
薛超凡
王连升
吴衍青
邰仁忠
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Shanghai Institute of Applied Physics of CAS
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Shanghai Institute of Applied Physics of CAS
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/02Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
    • G01N23/04Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
    • G01N23/20008Constructional details of analysers, e.g. characterised by X-ray source, detector or optical system; Accessories therefor; Preparing specimens therefor
    • G01N23/20025Sample holders or supports therefor
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/05Investigating materials by wave or particle radiation by diffraction, scatter or reflection
    • G01N2223/056Investigating materials by wave or particle radiation by diffraction, scatter or reflection diffraction
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00Investigating materials by wave or particle radiation
    • G01N2223/60Specific applications or type of materials
    • G01N2223/611Specific applications or type of materials patterned objects; electronic devices

Abstract

The invention relates to a multifunctional synchronous radiation interference exposure experimental platform which sequentially comprises a synchronous radiation light source generating device, a first cylindrical reflector, a second cylindrical reflector, an aperture diaphragm, a first photodiode for measuring the intensity of incident light, a transmission grating to be measured, a grade selection diaphragm and a transmission image receiving device along the direction of a light path, wherein a multifunctional sample frame is arranged between the grade selection diaphragm and the transmission image receiving device, the multifunctional sample frame comprises a sample clamp for clamping a sample, a second photodiode and a hollowed observation hole, the second photodiode and the sample are positioned on the same irradiation plane, and the transmission image receiving device is aligned with the hollowed observation hole. The multifunctional synchronous radiation interference exposure experiment platform and the experiment method can correct the exposure time to compensate the influence caused by light intensity fluctuation in the exposure process, and simultaneously can realize the rapid measurement of diffraction efficiency and the accurate evaluation of the sensitivity performance of the extreme ultraviolet photoresist.

Description

Multifunctional synchronous radiation interference exposure experiment platform and experiment method
Technical Field
The invention relates to the field of synchrotron radiation soft X-ray interference experiment equipment, in particular to a multifunctional synchrotron radiation interference exposure experiment platform and an experiment method, which can correct interference exposure process parameters in time, measure diffraction efficiency of a transmission grating and evaluate sensitivity of extreme ultraviolet photoresist.
Background
The synchrotron radiation soft X-ray interference photoetching is a novel advanced micro-nano processing technology for exposing photoresist by utilizing interference fringes of two or more coherent X-ray beams, and can be used for processing nano structures with dozens of even dozens of nano periods. In an interference exposure experiment, the incident light intensity fluctuates, but the current experiment platform cannot measure the actual light intensity at the irradiation position of a sample, so that the exposure time cannot be modified in time to cope with the influence of the light intensity fluctuation at the irradiation position in the exposure process. The light intensity data measured at the upstream and downstream positions of the sample is not accurate to the light intensity data obtained at the irradiation surface, and if the change condition of the incident light intensity can be accurately evaluated in the exposure experiment process, the exposure time in the exposure process can be timely modified, so that the stability of the exposure process can be greatly improved.
Extreme Ultraviolet (EUV) photoresist performance is an important factor in the development of EUV lithography, and the sensitivity performance of EUV photoresist is accurately evaluated and plays a crucial role in the development process of EUV photoresist. In the existing experimental platform for evaluating the sensitivity of the EUV photoresist, a photodiode and a sample are not in the same irradiation plane, so that the accuracy of the obtained experimental data is not high.
The transmission grating is a widely used dispersion optical element, the diffraction efficiency is a very important performance index for the transmission grating, and the accurate measurement of the transmission grating can effectively evaluate the performance of the grating, so that the process for manufacturing the grating is improved. In addition, in the quantitative test of the synchrotron radiation soft X-ray energy spectrum and the detection of interference lithography and extreme ultraviolet photoresist, measurement analysis and research of diffraction efficiency of each level after the soft X-ray penetrates through the transmission grating are also needed, so that it is important to be able to quickly test the diffraction efficiency of the transmission grating in real time under the above experimental conditions. However, the existing method for measuring the diffraction efficiency of the transmission grating is to scan and measure the diffraction light intensity in a three-dimensional space by using a detector, and the method is long in time consumption and cannot be carried out in the same interference exposure experiment platform.
Therefore, a multifunctional experiment platform is needed to be designed, which can correct exposure time, accurately evaluate the sensitivity of the EUV photoresist, and quickly measure the diffraction efficiency of the transmission grating in real time.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a multifunctional synchrotron radiation interference exposure experiment platform and an experiment method, which can correct the exposure time in an interference exposure process in time, thereby improving the stability of the exposure process, accurately evaluating the sensitivity of extreme ultraviolet photoresist, and rapidly measuring the diffraction efficiency of a transmission grating.
The invention provides a multifunctional synchronous radiation interference exposure experimental platform which sequentially comprises a synchronous radiation light source generating device, a first cylindrical reflector, a second cylindrical reflector, an aperture diaphragm, a first photodiode for measuring the intensity of incident light, a transmission grating to be measured, a grade selection diaphragm and a transmission image receiving device along the direction of a light path, wherein a multifunctional sample frame is arranged between the grade selection diaphragm and the transmission image receiving device, the multifunctional sample frame comprises a sample clamp for clamping a sample, a second photodiode and a hollowed observation hole, the second photodiode and the sample are positioned on the same irradiation plane, and the transmission image receiving device is aligned with the hollowed observation hole.
Further, the synchrotron radiation light source generating device is a synchrotron radiation soft X-ray generating device which generates an incident beam of a soft X-ray working waveband.
Further, the energy range of the incident beam is 85-150 eV.
Furthermore, the first cylindrical reflector and the second cylindrical reflector are both made of Si, and the surfaces of the first cylindrical reflector and the second cylindrical reflector are both plated with Au layers.
Further, the area of the aperture diaphragm is smaller than the area of the incident light spot.
Further, the aperture diaphragm is a circular hole with the diameter of 2 mm.
Further, the level selection diaphragm is a square hollow window, and the side length of the level selection diaphragm is smaller than the length of the shortest side of the transmission grating to be detected.
The invention also provides a method for correcting the soft X-ray interference exposure time, which comprises the following steps:
step S11, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, and turning on the synchrotron radiation light source generating device;
step S12, moving the hollowed observation hole on the multifunctional sample holder to the position of the light path, and utilizing the transmission image receiving device to perform real-time imaging on the high order harmonic wave remained in the soft X-ray;
step S13, finding the position of the transmission grating to be detected according to the higher harmonic imaging of the transmission image receiving device, and then moving the position of the level selection diaphragm to ensure that the center of the level selection diaphragm is coincided and aligned with the center of the transmission grating to be detected;
step S14, moving the multifunctional sample holder to make the second photodiode on the multifunctional sample holder located on the light path, detecting the zero-order light intensity I passing through the transmission grating to be detected in real time0
And step S15, according to the measured zero-order light intensity, correcting the corresponding exposure time according to the principle that the product of the exposure time and the zero-order light intensity is kept constant.
The invention also provides a method for measuring the diffraction efficiency of the transmission grating of the soft X-ray energy section, which comprises the following steps:
step S21, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, and turning on the synchrotron radiation light source generating device;
step S22, the incident beam of soft X-ray working wave band that synchrotron radiation light source generating device produced passes through in proper order behind first cylinder speculum, second cylinder speculum and the aperture diaphragm, directly shines first photodiode, measures the light intensity of soft X-ray incident beam, then multiply the ratio of grade selection diaphragm area with aperture diaphragm area obtains the process the incident light intensity I of transmission grating that awaits measuringin
Step S23, moving the hollowed observation hole on the multifunctional sample holder to the position of the light path, utilizing the transmission image receiving device to perform real-time imaging on the high order harmonic remaining in the soft X-ray, finding the position of the transmission grating to be detected according to the high order harmonic imaging of the transmission image receiving device, and then moving the position of the level selection diaphragm to enable the center of the level selection diaphragm to be coincident and aligned with the center of the transmission grating to be detected;
step S24, the stage selection diaphragm is translated leftwards or rightwards along the direction of the vertical light path, the diffracted lights with different orders are selected to pass through, the photodiode on the multifunctional sample frame is utilized to measure the light intensity I of the diffracted lights with different orders passing through the transmission grating to be measuredout
Step S25, calculating the absolute diffraction efficiency of the transmission grating:
Figure BDA0002569469280000031
the invention also provides an evaluation method of the sensitivity of the extreme ultraviolet photoresist, which comprises the following steps:
step S31, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, removing the transmission grating to be detected, and turning on the synchrotron radiation light source generating device;
and step S32, fixing the wafer/substrate coated with the extreme ultraviolet photoresist film layer on a sample clamp of the multifunctional sample holder, placing the wafer/substrate on a light path position for direct exposure, and measuring by using the second photodiode to obtain the incident light intensity of the soft X-ray.
Step S33, measuring the residual thickness of the extreme ultraviolet photoresist film layer after development in the exposure area by using an ellipsometer;
and step S34, evaluating the sensitivity of the extreme ultraviolet photoresist according to the exposure dose curve corresponding to the residual thickness of the extreme ultraviolet photoresist film layer in the exposure area measured in the step S33.
The multifunctional synchronous radiation interference exposure experimental platform provided by the invention designs the multifunctional sample frame, and the hollow observation hole can be used for realizing the alignment of the level selection diaphragm and the transmission grating by utilizing higher harmonic imaging under the condition that a sample is not taken out, so that the zero-level light intensity passing through the transmission grating can be accurately monitored, and the exposure time can be corrected to compensate the influence generated by light intensity fluctuation in the exposure process. Meanwhile, on the premise of realizing the alignment of the level selection diaphragm and the transmission grating, light of different levels can be selected to pass through the transmission grating only by moving the level selection diaphragm, so that the rapid measurement of the diffraction efficiency is realized. In addition, the multifunctional sample holder has the design that the photodiode is arranged on the same irradiation plane with the sample, so that the sensitivity performance of the extreme ultraviolet photoresist can be more accurately evaluated.
Drawings
FIG. 1 is a schematic optical layout of a multifunctional synchrotron radiation interference exposure experiment platform according to the invention.
Fig. 2 is a schematic structural view of the multifunctional sample holder of fig. 1.
Detailed Description
The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the multifunctional synchronous radiation interference exposure experimental platform according to a preferred embodiment of the present invention sequentially includes, along an optical path, a synchronous radiation light source generating device 1, a first cylindrical mirror 2, a second cylindrical mirror 3, an aperture stop 4, a first Photodiode (PD) 5 for measuring an incident light intensity, a transmission grating 6 to be measured, an order-selecting aperture (OSA) 7, a multifunctional sample holder 8, and a transmission image receiving device 9.
The synchrotron radiation light source generating device 1 is a synchrotron radiation soft X-ray generating device, generates incident beams of a soft X-ray working wave band, has the energy range of 85-150 eV, and comprises an extreme ultraviolet energy band required by extreme ultraviolet photoresist detection.
The first cylindrical mirror 2 is used to adjust the deflection angle of the soft X-rays while reducing the downstream thermal load. The first cylindrical reflector 2 is made of Si, and the surface of the first cylindrical reflector is plated with a 50 nm-thick Au layer, so that higher harmonics can be effectively inhibited, and trace higher harmonics are allowed to be reserved. The second cylindrical reflector 3 can continuously adjust the deflection of the soft X-ray to focus and collimate the soft X-ray, and the material of the second cylindrical reflector 3 is the same as that of the first cylindrical reflector 2.
The aperture stop 4 is used to define the incident spot area and to eliminate stray light. And thus its area is smaller than the area of the incident spot, in this embodiment the aperture stop 4 is a circular hole with a diameter of 2 mm. In other embodiments, different dimensions may be designed according to experimental requirements.
The level selection diaphragm 7 is used for diffraction level selection of incident light, is a square hollow window, and the side length is smaller than the length of the shortest side of the transmission grating 6 to be detected, so that after the level selection diaphragm completes collimation alignment, the hollow window area can be ensured to be completely irradiated by light, the condition that part of the area is irradiated by light and part of the area is not irradiated by light is avoided, and the irradiation area value is the area of the OSA hollow window when the subsequent light intensity calculation is ensured.
The multifunctional sample holder 8 is used for precise movement control of a sample and light intensity detection at the sample, as shown in fig. 2, the multifunctional sample holder 8 comprises a sample clamp 81, a second photodiode 82 and a hollow observation hole 83 are arranged above the sample clamp 81 side by side, wherein the sample clamp 81 is used for clamping the sample, the sample and the second photodiode 82 are located on the same irradiation plane, and the hollow observation hole 83 is used for aligning the OSA with the transmission grating 6 to be measured. In other embodiments, the positions of the sample holder 81, the second photodiode 82, and the hollowed-out observation hole 83 may be exchanged or arranged at any other positions, only the sample and the second photodiode 82 are located on the same illumination plane, and the hollowed-out observation hole 83 is aligned with the transmission image receiving device 9 during the experiment. The multifunctional sample holder is provided with the observation hole 83 for alignment, and the alignment of the OSA and the transmission grating is realized by utilizing higher harmonic imaging under the condition that a sample is not taken out, so that the zero-order light intensity passing through the transmission grating can be accurately monitored, and the exposure time can be corrected to compensate the influence generated by light intensity fluctuation in the exposure process. In addition, on the premise of aligning the OSA and the transmission grating, the OSA can be moved to select light of different orders to pass through the transmission grating, so that the measurement of diffraction efficiency is realized. And the design of placing the photodiode 82 at the same illumination plane as the sample makes it possible to more accurately evaluate the sensitivity performance of the EUV photoresist. The experimental methods of the aforementioned correction of exposure time, measurement of diffraction efficiency, and evaluation of EUV photoresist sensitivity will be described in further detail below.
The transmission image receiving device 9 is used for collimation between the transmission grating 6 to be detected and the grading diaphragm 7 and evaluation of uniformity of incident light spots, and is a device capable of detecting soft X-rays, such as a CCD camera, and a camera of the CCD camera is aligned with the hollowed-out observation hole 83.
When the experimental platform is adopted to carry out a soft X-ray interference exposure experiment, the exposure time can be corrected in time, the stability of the exposure process is improved, and the method specifically comprises the following steps:
step S11, providing the aforementioned multifunctional synchrotron radiation interference exposure experimental platform, and turning on the synchrotron radiation light source generating device 1.
And step S12, moving the hollow observation hole 83 on the multifunctional sample holder 8 to the position of the light path, and utilizing the CCD camera to perform real-time imaging on the high-order harmonic wave remained in the soft X-ray.
Step S13, finding the position of the transmission grating 6 to be measured according to the higher harmonic imaging in the CCD camera, and then moving the position of the OSA to achieve the center coincidence alignment of the OSA and the transmission grating 6 to be measured. In the soft X-ray interference exposure experiment, the grating mask used for interference exposure is formed by combining two or more transmission gratings, the OSA is aligned with the transmission grating to be tested in a superposition manner, on one hand, the corresponding light intensity can be accurately calculated, on the other hand, the influence of light passing through other transmission gratings on the mask except the transmission grating to be tested on the test result is avoided, and meanwhile, light passing through other diffraction orders of the transmission grating to be tested can be effectively shielded.
Step S14, moving the multifunctional sample holder 8 to make the second photodiode 82 on the multifunctional sample holder 8 located on the light path, detecting the zero-order light intensity I passing through the transmission grating 6 to be detected in real time0
And step S15, according to the light intensity of the zero-order light measured in real time in the step S14, correcting the corresponding exposure time according to the principle that the product of the exposure time and the light intensity of the zero-order light keeps constant.
When the experimental platform is adopted to measure the diffraction efficiency of the transmission grating of the soft X-ray energy section, the method specifically comprises the following steps:
step S21, providing the aforementioned multifunctional synchrotron radiation interference exposure experimental platform, and turning on the synchrotron radiation light source generating device 1.
Step S22, the incident beam of the soft X-ray working band generated by the synchrotron radiation light source generator 1 sequentially passes through the first cylindrical reflector 2, the second cylindrical reflector 3 and the aperture stop 4, and then directly irradiates the first photodiode 5, so as to measure the light intensity of the soft X-ray incident beam, and then multiplies the ratio of the area of the OSA to the area of the aperture stop 4 to obtain the incident light intensity I passing through the transmission grating 6 to be measuredin
Step S23, moving the hollowed observation hole 83 on the multifunctional sample holder 8 to the optical path position, performing real-time imaging on the remaining higher harmonics in the soft X-ray by using the CCD camera, finding the position of the transmission grating 6 to be measured according to the imaging of the higher harmonics in the CCD camera, and then moving the position of the OSA to achieve center registration of the OSA and the transmission grating 6 to be measured. The effect of the coincidence alignment of the OSA and the transmission grating to be measured is the same as that in the aforementioned step S13, and is not described again here.
Step S24, the OSA is translated leftwards or rightwards along the direction of the vertical light path to realize the selection of the diffracted light of different orders to pass through, the photodiode 82 on the multifunctional sample rack 8 is utilized to measure the light intensity I of the diffracted light of different orders passing through the transmission grating 6 to be measuredout
Step S25, calculating diffracted lightRatio of light intensity to incident light intensity:
Figure BDA0002569469280000071
the absolute diffraction efficiency of the transmission grating is obtained.
Compared with the existing measuring method for scanning and measuring the diffraction light intensity in the three-dimensional space by using the detector, the experimental method provided by the invention only needs to move the OSA in two dimensions, does not need to move the photodiode any more, and can realize real-time and rapid measurement of the diffraction efficiency of the transmission grating.
When the experimental platform is used for evaluating the sensitivity of Extreme Ultraviolet (EUV) photoresist, the method specifically comprises the following steps:
step S31, providing the aforementioned multifunctional synchrotron radiation interference exposure experiment platform, removing the transmission grating 6 to be measured, and turning on the synchrotron radiation light source generating device 1.
Step S32, fixing the wafer/substrate coated with the EUV photoresist film layer on a sample clamp 81 of a multifunctional sample holder 8, and placing the wafer/substrate on an optical path position for direct exposure, wherein an exposure area is equal to the area of OSA and is marked as S; at the same time, the second photodiode 82 on the multifunctional sample holder 8 is used for measuring the soft X-ray incident light intensity, which is marked as I1. In the exposure area S and the incident light intensity I1In a known situation, the exposure dose of the extreme ultraviolet photoresist on a unit area can be calculated according to the actual exposure time.
Step S33, measuring the residual thickness of the EUV photoresist film layer after development in the exposure area using an ellipsometer.
In step S34, the photoresist sensitivity is defined as the exposure dose required when the original thickness of the positive photoresist in the exposure region is zero and the thickness of the negative photoresist in the exposure region is 80%, so that the sensitivity of the EUV photoresist can be evaluated according to the exposure dose curve corresponding to the remaining thickness of the EUV photoresist film in the exposure region measured in step S33.
The experimental method for evaluating the sensitivity of the extreme ultraviolet photoresist improves the accuracy by actually measuring the incident light intensity at the sample.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in order to avoid obscuring the invention.

Claims (10)

1. The utility model provides a multi-functional synchrotron radiation interferes exposure experiment platform, includes synchrotron radiation light source generating device, first cylinder speculum, second cylinder speculum, aperture diaphragm, is used for measuring the first photodiode of incident light intensity, awaits measuring transmission grating, level selection diaphragm and transmission image receiving arrangement in proper order along the light path trend, its characterized in that the level select the diaphragm with be equipped with multi-functional sample frame between the transmission image receiving arrangement, multi-functional sample frame is including the sample clamp, second photodiode and the fretwork observation hole that are used for the centre gripping sample, second photodiode with the sample is located same plane of shining, transmission image receiving arrangement aligns the fretwork observation hole.
2. The multifunctional synchrotron radiation interference exposure experimental platform of claim 1, wherein the synchrotron radiation light source generating device is a synchrotron radiation soft X-ray generating device which generates an incident beam of a soft X-ray operating band.
3. The multifunctional synchrotron interference exposure experimental platform of claim 2, wherein the incident light beam has an energy range of 85-150 eV.
4. The multifunctional synchronous radiation interference exposure experiment platform as claimed in claim 1, wherein the first cylindrical reflector and the second cylindrical reflector are both made of Si, and the surfaces of the first cylindrical reflector and the second cylindrical reflector are both plated with Au layers.
5. The multifunctional synchrotron radiation interference exposure experiment platform of claim 1, wherein the area of the aperture stop is smaller than the area of an incident light spot.
6. The multifunctional synchrotron radiation interference exposure experiment platform of claim 5, wherein the aperture diaphragm is a circular hole with a diameter of 2 mm.
7. The multifunctional synchronous radiation interference exposure experimental platform as claimed in claim 1, wherein the stage selection diaphragm is a square hollow window, and the side length of the square hollow window is smaller than the length of the shortest side of the transmission grating to be detected.
8. A method for correcting soft X-ray interference exposure time is characterized by comprising the following steps:
step S11, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, and turning on the synchrotron radiation light source generating device;
step S12, moving the hollowed observation hole on the multifunctional sample holder to the position of the light path, and utilizing the transmission image receiving device to perform real-time imaging on the high order harmonic wave remained in the soft X-ray;
step S13, finding the position of the transmission grating to be detected according to the higher harmonic imaging of the transmission image receiving device, and then moving the position of the level selection diaphragm to ensure that the center of the level selection diaphragm is coincided and aligned with the center of the transmission grating to be detected;
step S14, moving the multifunctional sample holder to make the second photodiode on the multifunctional sample holder located on the light path, detecting the zero-order light intensity I passing through the transmission grating to be detected in real time0
And step S15, according to the measured zero-order light intensity, correcting the corresponding exposure time according to the principle that the product of the exposure time and the zero-order light intensity is kept constant.
9. A method for measuring diffraction efficiency of a transmission grating in a soft X-ray energy band is characterized by comprising the following steps:
step S21, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, and turning on the synchrotron radiation light source generating device;
step S22, the incident beam of soft X-ray working wave band that synchrotron radiation light source generating device produced passes through in proper order behind first cylinder speculum, second cylinder speculum and the aperture diaphragm, directly shines first photodiode, measures the light intensity of soft X-ray incident beam, then multiply the ratio of grade selection diaphragm area with aperture diaphragm area obtains the process the incident light intensity I of transmission grating that awaits measuringin
Step S23, moving the hollowed observation hole on the multifunctional sample holder to the position of the light path, utilizing the transmission image receiving device to perform real-time imaging on the high order harmonic remaining in the soft X-ray, finding the position of the transmission grating to be detected according to the high order harmonic imaging of the transmission image receiving device, and then moving the position of the level selection diaphragm to enable the center of the level selection diaphragm to be coincident and aligned with the center of the transmission grating to be detected;
step S24, the stage selection diaphragm is translated leftwards or rightwards along the direction of the vertical light path, the diffracted lights with different orders are selected to pass through, the photodiode on the multifunctional sample frame is utilized to measure the light intensity I of the diffracted lights with different orders passing through the transmission grating to be measuredout
Step S25, calculating the absolute diffraction efficiency of the transmission grating:
Figure FDA0002569469270000021
10. a method for evaluating sensitivity of an extreme ultraviolet photoresist is characterized by comprising the following steps:
step S31, providing the multifunctional synchrotron radiation interference exposure experiment platform as claimed in any one of claims 1 to 7, removing the transmission grating to be detected, and turning on the synchrotron radiation light source generating device;
and step S32, fixing the wafer/substrate coated with the extreme ultraviolet photoresist film layer on a sample clamp of the multifunctional sample holder, placing the wafer/substrate on a light path position for direct exposure, and measuring by using the second photodiode to obtain the incident light intensity of the soft X-ray.
Step S33, measuring the residual thickness of the extreme ultraviolet photoresist film layer after development in the exposure area by using an ellipsometer;
and step S34, evaluating the sensitivity of the extreme ultraviolet photoresist according to the exposure dose curve corresponding to the residual thickness of the extreme ultraviolet photoresist film layer in the exposure area measured in the step S33.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113835313A (en) * 2021-11-10 2021-12-24 南京大学 Extreme ultraviolet lithography exposure method based on higher harmonics

Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218562A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Exposure method
JPH05144706A (en) * 1991-11-18 1993-06-11 Mitsubishi Electric Corp X-ray aligner
JPH1116821A (en) * 1997-06-27 1999-01-22 Toshiba Corp Apparatus and method for x-ray exposure
US6278957B1 (en) * 1993-01-21 2001-08-21 Nikon Corporation Alignment method and apparatus therefor
US6456377B1 (en) * 1997-01-20 2002-09-24 Nikon Corporation Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature
US6549277B1 (en) * 1999-09-28 2003-04-15 Nikon Corporation Illuminance meter, illuminance measuring method and exposure apparatus
US20040099808A1 (en) * 2002-11-21 2004-05-27 Berger Kurt W. Universal EUV in-band intensity detector
JP2005311020A (en) * 2004-04-21 2005-11-04 Nikon Corp Exposure method and method of manufacturing device
CN1723542A (en) * 2002-12-10 2006-01-18 株式会社尼康 Exposure apparatus and device manufacturing method
US20060170891A1 (en) * 2003-09-29 2006-08-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
CN101063818A (en) * 2006-02-22 2007-10-31 气体产品与化学公司 Top coat for lithography processes
CN101211115A (en) * 2006-12-28 2008-07-02 中芯国际集成电路制造(上海)有限公司 Method for evaluating development capability
CN101631746A (en) * 2007-03-19 2010-01-20 韩国电子通信研究院 Method of synthesizing ITO electron-beam resist and method of forming ITO pattern using the same
RU2380665C1 (en) * 2008-12-11 2010-01-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Device for determining absorption coefficient of surface electromagnetic waves in infrared band
CN101957257A (en) * 2010-09-10 2011-01-26 中国科学院长春光学精密机械与物理研究所 Measurement method of diffraction efficiency of concave grating
US20120133915A1 (en) * 2010-02-20 2012-05-31 Nikon Corporation Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method
US20120244476A1 (en) * 2011-03-25 2012-09-27 Samsung Electronics Co., Ltd. Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus
CN103245487A (en) * 2012-02-07 2013-08-14 中国科学院微电子研究所 Method for testing absolute diffraction efficiency of transmission grating
CN104880914A (en) * 2015-05-21 2015-09-02 浙江大学 Method and device for rapidly preparing color filter in large area by using synchrotron radiation
CN105182701A (en) * 2015-10-15 2015-12-23 中国科学院上海应用物理研究所 Synchrotron radiation X-ray large-area interference lithography system
US20160268176A1 (en) * 2015-03-11 2016-09-15 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device
CN108549197A (en) * 2018-03-15 2018-09-18 中国科学院上海应用物理研究所 It is a kind of original position luminous flux monitoring and exposure dose compensation method
CN208432850U (en) * 2018-08-10 2019-01-25 上海微电子装备(集团)股份有限公司 A kind of exposure device

Patent Citations (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6218562A (en) * 1985-07-17 1987-01-27 Fujitsu Ltd Exposure method
JPH05144706A (en) * 1991-11-18 1993-06-11 Mitsubishi Electric Corp X-ray aligner
US6278957B1 (en) * 1993-01-21 2001-08-21 Nikon Corporation Alignment method and apparatus therefor
US6456377B1 (en) * 1997-01-20 2002-09-24 Nikon Corporation Method for measuring optical feature of exposure apparatus and exposure apparatus having means for measuring optical feature
JPH1116821A (en) * 1997-06-27 1999-01-22 Toshiba Corp Apparatus and method for x-ray exposure
US6549277B1 (en) * 1999-09-28 2003-04-15 Nikon Corporation Illuminance meter, illuminance measuring method and exposure apparatus
US20040099808A1 (en) * 2002-11-21 2004-05-27 Berger Kurt W. Universal EUV in-band intensity detector
CN1723542A (en) * 2002-12-10 2006-01-18 株式会社尼康 Exposure apparatus and device manufacturing method
US20060170891A1 (en) * 2003-09-29 2006-08-03 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
JP2005311020A (en) * 2004-04-21 2005-11-04 Nikon Corp Exposure method and method of manufacturing device
CN101063818A (en) * 2006-02-22 2007-10-31 气体产品与化学公司 Top coat for lithography processes
CN101211115A (en) * 2006-12-28 2008-07-02 中芯国际集成电路制造(上海)有限公司 Method for evaluating development capability
CN101631746A (en) * 2007-03-19 2010-01-20 韩国电子通信研究院 Method of synthesizing ITO electron-beam resist and method of forming ITO pattern using the same
RU2380665C1 (en) * 2008-12-11 2010-01-27 Государственное образовательное учреждение высшего профессионального образования "Российский университет дружбы народов" (РУДН) Device for determining absorption coefficient of surface electromagnetic waves in infrared band
US20120133915A1 (en) * 2010-02-20 2012-05-31 Nikon Corporation Light source optimizing method, exposure method, device manufacturing method, program, exposure apparatus, lithography system, light source evaluation method, and light source modulation method
CN101957257A (en) * 2010-09-10 2011-01-26 中国科学院长春光学精密机械与物理研究所 Measurement method of diffraction efficiency of concave grating
US20120244476A1 (en) * 2011-03-25 2012-09-27 Samsung Electronics Co., Ltd. Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus
CN103245487A (en) * 2012-02-07 2013-08-14 中国科学院微电子研究所 Method for testing absolute diffraction efficiency of transmission grating
US20160268176A1 (en) * 2015-03-11 2016-09-15 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device
CN104880914A (en) * 2015-05-21 2015-09-02 浙江大学 Method and device for rapidly preparing color filter in large area by using synchrotron radiation
CN105182701A (en) * 2015-10-15 2015-12-23 中国科学院上海应用物理研究所 Synchrotron radiation X-ray large-area interference lithography system
CN108549197A (en) * 2018-03-15 2018-09-18 中国科学院上海应用物理研究所 It is a kind of original position luminous flux monitoring and exposure dose compensation method
CN208432850U (en) * 2018-08-10 2019-01-25 上海微电子装备(集团)股份有限公司 A kind of exposure device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
CHAOFAN XUE: "《The wave optical whole process design of the soft X-ray interference lithography beamline at SSRF》", 《JOURNAL OF SYNCHROTRON RADIATION》 *
郭玉彬: "《激光等离子体软X射线接近式光刻术初步研究》", 《光学学报》 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113835313A (en) * 2021-11-10 2021-12-24 南京大学 Extreme ultraviolet lithography exposure method based on higher harmonics

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