CN111778491B - Method for repairing surface of heater and chemical vapor deposition equipment - Google Patents
Method for repairing surface of heater and chemical vapor deposition equipment Download PDFInfo
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- CN111778491B CN111778491B CN201910272482.9A CN201910272482A CN111778491B CN 111778491 B CN111778491 B CN 111778491B CN 201910272482 A CN201910272482 A CN 201910272482A CN 111778491 B CN111778491 B CN 111778491B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Abstract
The invention relates to a method for repairing the surface of a heater and a chemical vapor deposition device. The repairing method comprises the following steps: monitoring a deposit layer formed on the heater surface; obtaining the thickness distribution of the sedimentary body layer; and when the thickness distribution is not uniform, spraying repair powder to the surface of the heater based on the thickness distribution until the thickness distribution is uniform. According to the method for repairing the surface of the heater, the service life of the heater in the chemical vapor deposition equipment can be prolonged.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a method for repairing the surface of a heater and chemical vapor deposition equipment.
Background
In the semiconductor industry, chemical Vapor Deposition (CVD) is a process in which gaseous substances are used to chemically react on a solid surface, thereby producing a solid deposit. The chemical vapor deposition is a technique for depositing various materials, and has a very wide range of applications. In particular, many thin films in large scale integrated circuits are prepared by chemical vapor deposition.
In the prior art, aluminum nitride (AlN) is often used as a material for manufacturing a heater in a chemical vapor deposition apparatus because of its characteristics of high thermal conductivity, high thermal expansion coefficient, high flexural strength, and no toxicity. However, during the cleaning process of the chamber of the cvd apparatus, the cleaning material often reacts with the heater to form a deposited layer with uneven thickness on the surface of the heater (for example, the cleaning material may be a fluorine-containing gas such as ClF3, CF4, etc., which reacts with the aluminum nitride to form an aluminum fluoride layer with uneven thickness on the surface of the heater), thereby affecting the heating effect of the wafer during the production process and further affecting the wafer yield.
In order to ensure the wafer yield, the expensive heater needs to be frequently replaced, and the service life of the heater is short.
Disclosure of Invention
The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for repairing a heater surface and a chemical vapor deposition apparatus, which can improve the service life of a heater.
A method for repairing a heater surface according to an embodiment of the present invention includes: monitoring a deposit layer formed on the heater surface; acquiring the thickness distribution of the sediment layer; and when the thickness distribution is not uniform, spraying repair powder to the surface of the heater based on the thickness distribution until the thickness distribution is uniform.
According to an embodiment of the present invention, before the monitoring of the deposited body layer formed on the heater surface, the method further includes: and forming a protective layer on the surface of the heater, wherein the protective layer comprises one or the combination of an aluminum oxide layer, a zirconium oxide layer and a titanium oxide layer.
According to an embodiment of the present invention, before the monitoring of the deposited body layer formed on the heater surface, the method further includes:
and cleaning the cavity to which the heater belongs by cleaning gas, wherein the cleaning gas comprises fluorine-containing gas, and the deposition body layer comprises an aluminum fluoride layer.
According to one embodiment of the present invention, the method for repairing a heater surface includes a step of forming a layer of aluminum fluoride on the heater surface.
According to an embodiment of the present invention, after the obtaining the thickness distribution of the deposited body layer, the method further includes: acquiring a thickness maximum value and a thickness minimum value corresponding to the thickness distribution; calculating to obtain a thickness difference value according to the thickness maximum value and the thickness minimum value; and when the thickness difference is larger than a preset threshold value, judging that the thickness distribution is uneven distribution.
According to an embodiment of the present invention, the method for repairing a heater surface, wherein the deposition body layer is a multi-component mixture layer or a multi-component laminated structure or composite body layer.
According to one embodiment of the present invention, the method for repairing a heater surface includes one or a combination of alumina powder, zirconia powder, and titania powder.
According to an embodiment of the present invention, the method for repairing a heater surface further includes, after the spraying of the repair powder to the heater surface: the heater is heated to more than 500 ℃ to solidify the repair powder.
According to a method for repairing a heater surface according to an embodiment of the present invention, the method for spraying repair powder to the heater surface includes: spraying the repair powder onto the heater surface with a carrier gas, the carrier gas comprising an inert gas.
According to one embodiment of the invention, the repair powder has a size of 1 to 3 μm.
According to an embodiment of the present invention, the method for repairing a heater surface includes spraying continuously and spraying intermittently.
The chemical vapor deposition apparatus according to an embodiment of the present invention includes: a heater; a monitoring device for monitoring a deposit layer formed on the heater surface; a measuring device for measuring a thickness distribution of the deposit layer and acquiring the thickness distribution; and the repairing nozzle is used for spraying repairing powder to the surface of the heater based on the thickness distribution when the thickness distribution is not uniform until the thickness distribution is uniform.
The present invention has the following effects.
According to the method for repairing the surface of the heater, the heater arranged in the chemical vapor deposition equipment can be semi-permanently used, so that the service life of the heater is prolonged, and the service life of the heater is prolonged.
In addition, since it is not necessary to frequently replace the expensive heater, the cost associated with the heater member, which is caused thereby, can be reduced, and thus the production cost can be reduced.
Further, since the temperature difference between the center portion and the edge portion of the heater surface can be minimized, the uniformity of the wafer, the integrated circuit, and the like can be improved, and the problem of the product quality degradation of the wafer, the integrated circuit, and the like can be prevented in advance.
Drawings
FIG. 1 is a schematic view showing a structure of a chemical vapor deposition apparatus in the prior art;
FIG. 2 is a schematic diagram showing a temperature distribution of a wafer on a heater in the prior art;
fig. 3 is a schematic enlarged view showing that a first alumina layer is formed before a heater is used in an embodiment of the present invention;
fig. 4 is a schematic enlarged view showing that a first aluminum fluoride layer is formed on a first aluminum oxide layer formed on the surface of a heater according to an embodiment of the present invention;
fig. 5 is a schematic enlarged view showing a partial area repair second aluminum oxide layer on the surface of the first aluminum fluoride layer of the heater according to the embodiment of the present invention;
fig. 6 is a schematic enlarged view showing that a second aluminum fluoride layer is formed on a partial region of the surface of the second aluminum oxide layer of the heater according to the embodiment of the present invention;
FIG. 7 is a schematic view showing a heater according to an embodiment of the present invention in which an (N + 1) th alumina layer is formed on a surface of an Nth alumina layer after being used for a certain period of time;
FIG. 8 is a schematic diagram showing the temperature distribution of a wafer on a heater according to the present invention;
FIG. 9 is a flow chart illustrating a method of repairing a heater surface according to an embodiment of the present invention;
FIG. 10 is a flow chart showing a method for repairing a heater surface according to another embodiment of the present invention;
FIG. 11 is a schematic view showing the structure of a chemical vapor deposition apparatus according to an embodiment of the present invention.
Detailed Description
Hereinafter, a method for repairing a heater surface according to an embodiment of the present invention will be described in detail with reference to the drawings. In the drawings, some components are shown in an enlarged scale in order to enable those skilled in the art to better understand the present invention.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first deposition body layer may be referred to as a second deposition body layer, and similarly, a second deposition body layer may be referred to as a first deposition body layer, without departing from the scope of the present disclosure. The first and second depositor layers are both depositor layers, but they are not the same depositor layer.
As shown in fig. 1, the chemical vapor deposition apparatus includes: a housing 1 for forming an inner space; a chamber 2 forming a space in which a chemical reaction is performed; a heater 3 disposed in the chamber 2 for heating the reaction gas inside the chamber 2 and the deposited material including the wafer, the integrated circuit, and the like; a gas inlet 4 for allowing a reaction gas to enter the chamber 2; and an exhaust port 5 for exhausting the reacted gas from the inside of the chamber 2.
The heater 3 includes: a heating plate 7 which constitutes a heating portion of the heater 3; and a heater plate support part 6 disposed below the heater plate 7, supporting the heater plate 7, and adjusting the height of the heater plate 7.
The heating plate 7 of the heater 3 may be formed of aluminum nitride (AlN), but is not limited thereto.
Fig. 3 shows a schematic enlarged view of a first alumina layer 31 formed on the surface of a heater according to an embodiment of the present invention; fig. 4 is a schematic enlarged view showing that the first aluminum fluoride layer 41 is formed on the surface of the first aluminum oxide layer 31 after the heater 3 according to the embodiment of the present invention is used for a while. The first aluminum fluoride layer 41 may also be formed directly on the heater surface when the first aluminum oxide layer 31 is not deposited on the heater surface.
As shown in fig. 5 to 7, the first aluminum oxide layer 31, the second aluminum oxide layer 32 to the nth aluminum oxide layer 3N are respectively used as a first repair layer, a second repair layer to an nth repair layer. First, second, and nth aluminum fluoride layers 41, 42, and 4N are sequentially formed on the surfaces of the first, second, and nth aluminum oxide layers 31, 32, and 3N, respectively. The thickness distribution of the deposition body layer may be obtained by directly measuring the thickness distribution of the topmost layer deposited on the heater surface, by measuring the thickness distribution of the topmost layer deposited on the heater surface, or by measuring the thickness distribution of the deposition body layer formed by the bottommost layer deposited on the heater surface and the topmost layer together, without being limited thereto.
For example, when the aluminum fluoride layer is the topmost layer deposited on the heater surface, the first aluminum fluoride layer 41, the second aluminum fluoride layer 42, through the nth aluminum fluoride layer 4N may be used as the first deposition body layer, the second deposition body layer, through the nth deposition body layer, respectively.
After the aluminum oxide layer is formed on the aluminum fluoride layer, when the aluminum oxide layer is the topmost layer deposited on the heater surface, the first aluminum fluoride layer 41 and the second aluminum oxide layer 32 may be used together as a first deposition body layer formed on the heater surface, the second aluminum fluoride layer 42 and the third aluminum fluoride layer 33 may be used together as a second deposition body layer formed on the heater surface, or the nth aluminum fluoride layer 4N and the N +1 th aluminum oxide layer 3n +1 may be used together as an nth deposition body layer formed on the heater surface.
The first aluminum fluoride layer 41 can be used as a first deposition body layer formed on the surface of the heater, and the first deposition body layer and the second aluminum oxide layer 32 can be used as a second deposition body layer formed on the surface of the heater together; a third deposited body layer formed using the second deposited body layer and the second aluminum fluoride layer 42 together as a heater surface, and so on. When the N +1 th aluminum oxide layer 3N +1 is the topmost layer deposited on the surface of the heater, the first aluminum fluoride layer 41 to the N +1 th aluminum oxide layer 3N +1 are jointly used as the Mth deposition body layer formed on the surface of the heater, that is, the Mth deposition body layer formed on the surface of the heater is jointly the N +1 th aluminum oxide layer 3N +1 deposited on the Mth deposition body layer and the Mth deposition body layer.
According to an embodiment of the present invention, there is provided a method for repairing a heater surface, which may include: monitoring a deposit layer formed on the heater surface; obtaining the thickness distribution of the sedimentary body layer; and when the thickness distribution is not uniform, spraying repair powder to the surface of the heater based on the thickness distribution until the thickness distribution is uniform.
As shown in fig. 9 and 10, taking a case where the first alumina layer 31 is a top-most layer deposited on the heater surface, and the heater surface is repaired to be the top-most layer deposited on the heater surface is an alumina layer 32 as an example, a method for repairing the heater surface according to an embodiment of the present invention is described, which may include:
a step (S10) of forming a first alumina layer 31 on the surface of the heater 3 and forming a second alumina layer 32 on the surface of the first alumina layer 41 formed on the first alumina layer 31.
The step S10 may include: a step (S11) of monitoring the first aluminum fluoride layer 41 formed on the surface of the heater 3 during the chemical vapor deposition; a step (S12) of acquiring a thickness distribution of the first aluminum fluoride layer 41; and a step (S13) of, when the thickness distribution is uneven, spraying repair powder to the surface of the heater 3 based on the thickness distribution until the thickness distribution is formed to be even.
The thickness distribution of the first aluminum fluoride layer 41 may be measured individually, or the thickness of the first aluminum oxide layer 31 and the first aluminum fluoride layer 41 as a whole may be measured to obtain the thickness distribution of the first aluminum fluoride layer 41. The thickness measurement can be performed by a measuring device in a thickness measurement manner such as an optical measurement method or a mechanical measurement method. The thickness distribution of the first aluminum fluoride layer 41 can represent the degree of surface irregularities of the first aluminum fluoride layer 41. When the thickness distribution of the first aluminum fluoride layer 41 is non-uniform, which indicates that the degree of surface unevenness of the first aluminum fluoride layer 41 may affect the wafer yield, repair powder may be sprayed onto the surface of the heater 3 based on the thickness distribution until the thickness distribution of the deposition layer composed of the first aluminum fluoride layer 41 and the second aluminum oxide layer 32 is formed to be uniform.
According to another embodiment of the present invention, there is provided a method of repairing a heater surface, which may include: a step (S20) of forming a third aluminum oxide layer 33 on the surface of the second aluminum oxide layer 42 formed on the surface of the second aluminum oxide layer 32; and a step (S30) of forming a fourth alumina layer 44 on the surface of the third aluminum trifluoride layer 43 formed on the surface of the third aluminum oxide layer 33. As the number of chemical reactions in the chamber 2 of the cvd apparatus increases, an aluminum fluoride layer having a non-uniform thickness distribution may be continuously formed on the surface of the heater 3, and thus an aluminum oxide layer may be sequentially formed on the continuously formed aluminum fluoride layer.
In one embodiment, when the maximum thickness of the overall deposition body layer on the surface of the heater, namely all the aluminum oxide layer and the deposition body layer consisting of the aluminum oxide layer and the aluminum fluoride layer deposited on the surface of the heater, is larger than a preset thickness threshold, the re-repair of the surface of the heater is stopped and an early warning signal is sent out. When the maximum thickness of the entire deposition body layer is greater than the predetermined thickness threshold, heat loss may occur during the heat conduction process, which may result in the actual heating temperature of the wafer placed on the surface of the heater not reaching the required temperature, and it is difficult to ensure the wafer yield.
As shown in fig. 5, during the use of the heater 3 having the first alumina layer 31 formed thereon, particles such as aluminum fluoride are generated by the repeated chemical vapor deposition, and therefore, a thin film of the aluminum fluoride is formed on the surface of the first alumina layer 31, and this thin film may be referred to as a first alumina layer 41. The unevenly distributed thickness distribution of the first aluminum fluoride layer 41 affects the temperature distribution of the heater surface and thus the temperature distribution of the wafer placed on the heater surface. The larger the difference in thickness corresponding to the thickness distribution of the first aluminum fluoride layer 41, the larger the temperature difference between the respective portions of the heater surface.
As shown in fig. 2, when a non-uniformly distributed deposition body layer is deposited on the surface of the heater, the temperature difference between portions of the wafer placed on the surface of the heater can be 6.3 ℃ or more. As shown in fig. 8, after the second aluminum oxide layer 32 is formed on the surface of the first aluminum fluoride layer 41, the degree of flatness of the surface of the heater is improved, so that the temperature difference between the parts of the wafer placed on the surface of the heater can be reduced, and the temperature difference between the parts of the wafer can reach 2.6 ℃ or less.
The method for repairing a heater surface of the present invention may comprise: and a step of spraying repair powder (or particles) onto the surface of the heater 3 based on the thickness distribution of the first aluminum fluoride layer 41 to repair the uneven thickness distribution of the first aluminum fluoride layer 41.
Specifically, in the process of forming the first alumina layer 31 or the process of forming the second alumina layer 32, that is, in the process of repairing the first alumina layer 41, a method of spraying alumina powder (or particles) onto the surface of the heater 3 may be employed to form the first alumina layer 31 or the second alumina layer 32 on the surface of the heater 3. Electroplating and anodic oxidation methods may be used, but the present invention is not limited thereto.
The thickness distribution is formed to be uniformly distributed so that a wafer, an integrated circuit, or the like placed on the heating plate 7 can be uniformly heated by reducing the surface roughness of the surface of the heater 3. Specifically, when the thickness distribution of the surface of the heater 3 is uneven, repair powder or the like is sprayed onto the surface of the heater 3, thereby reducing the surface roughness of the surface of the heater 3 and achieving or improving the product yield.
The repair powder may include any one or a combination of alumina powder, zirconia powder, and titania powder, but the present invention is not limited thereto.
For example, the layer formed by spraying the repair powder may be a layer formed of a metal oxide having good thermal conductivity and high stability, such as alumina, zirconia, or titania, or a composition thereof.
After the repair powder is sprayed onto the surface of the heater 3, the repair powder remaining on the surface thereof is cured by activating the heater 3, thereby forming a desired repair layer (e.g., an aluminum oxide layer).
In one embodiment, after curing the repair powder, further comprising reacquiring a thickness profile of the as-deposited body layer including the repair layer; when the thickness distribution is not uniform, the repair powder can be sprayed to the surface of the heater again based on the thickness distribution; and when the thickness distribution is uniform, stopping spraying the repair powder.
The heating temperature of the heater 3 may be 500 degrees or more, but the present invention is not limited thereto as long as the repair powder can be uniformly cured to reach a desired preset temperature.
As an example, the repair powder may be sprayed on the surface of the heater 3 using a carrier gas, which may be an inert gas, but the present invention is not limited thereto. As long as the carrier is a carrier gas used in carrying out a chemical reaction.
The size, i.e. the particle size, of the repair powder may be between 1 and 5 microns, preferably between 1 and 3 microns.
The repair powder may be continuously sprayed onto the surface of the heater 3 or intermittently sprayed. The spray time for spraying the repair powder to the heater surface may also be controlled based on the thickness distribution, the longer the spray time at a place where the thickness is smaller.
As an example, according to an embodiment of the present invention, there is provided a method of repairing a heater surface, which may include: before the first aluminum fluoride layer 41 is formed on the surface of the heater 3, that is, in a state where the heater 3 is not used, a protective layer, that is, a first aluminum oxide layer 31 is formed on the surface of the heater 3.
The first alumina layer 31 may include one or a combination of an alumina layer, a zirconia layer, and a titania layer.
As described above, the first aluminum fluoride layer 41 may be formed on the surface of the heater 3 during the chemical reaction. However, the first aluminum fluoride layer 41 may be formed during a cleaning operation of the chemical vapor deposition apparatus (specifically, a chamber in which a chemical reaction is actually performed).
In the cleaning operation for the chemical vapor deposition apparatus, a fluorine-containing gas may be used as the cleaning gas. When a fluorine-containing gas is used as the cleaning gas, if the heater 3 is made of an aluminum nitride material or if a protective aluminum oxide layer is formed on the surface of the heater 3, an aluminum fluoride layer may be formed on the surface of the heater 3.
In the cleaning process as described above, the aluminum fluoride layer may be formed on a part of the surface of the heater 3 in such a manner as to cover a part of the surface of the heater 3. That is, the aluminum fluoride layer may not completely cover the entire surface of the heater 3.
Since the process of performing the chemical reaction or the cleaning gas used in the cleaning process is also different, the deposition body layer formed on the surface of the heater 3 may be a laminated structure or a composite body layer formed of a plurality of components.
In the process of obtaining the thickness distribution of the first aluminum fluoride layer 41, a maximum thickness value and a minimum thickness value corresponding to the thickness distribution of the aluminum fluoride layer 41 may be obtained, and a thickness difference between the maximum thickness value and the minimum thickness value may be calculated. If the calculated thickness difference is greater than the preset threshold, it is determined that the thickness distribution of the first aluminum fluoride layer 41 is not uniform, and then the repair powder is sprayed to the surface of the heater 3, thereby forming the thickness distribution of the surface of the heater 3 to be uniform. It may be judged that the thickness distribution of the deposited body layer composed of the first aluminum fluoride layer 41 and the aluminum oxide layer 32 has been formed to be a uniform distribution when the calculated thickness difference is less than or equal to a preset threshold value. At this time, the preset threshold may be set according to data such as a yield of the product.
As shown in fig. 3, according to the method for repairing a heater surface of an embodiment of the present invention, first, before using the heater 3, a first alumina layer 31 is formed on a surface of the heater 3 made of an aluminum nitride material. The repair thickness distribution of the first alumina layer 31 may be 2 to 50 micrometers, but is not limited thereto as long as the surface of the heater 3 reaches a set temperature and the temperature distribution is uniform.
In fig. 5, a case where the second aluminum oxide layer 32 is repaired (formed) on the surface of the first aluminum fluoride layer 41 of the heater 3 is shown.
As shown in fig. 5, according to the method for repairing a heater surface according to an embodiment of the present invention, when the thickness distribution of the first aluminum fluoride layer 41 exceeds a predetermined thickness distribution or a temperature change (i.e., a temperature difference) between the middle portion and the edge portion of the surface of the first aluminum oxide layer 31 exceeds a predetermined value, the second aluminum oxide layer 32 needs to be formed on the surface of the first aluminum fluoride layer 41. Accordingly, the heater 3 is made to have a highly flat surface.
According to the method for repairing a heater surface of an embodiment of the present invention, if the difference in the thickness of the second aluminum fluoride layer 41 deposited on the surface of the first aluminum oxide layer 31 reaches a fixed value, the quality of a wafer, an integrated circuit, or the like may be affected, and therefore, it is necessary to measure the thickness distribution of the formed first aluminum fluoride layer 41.
Then, the thickness distribution of the second aluminum oxide layer 32 to be formed (or repaired) is determined based on the measured thickness distribution of the first aluminum fluoride layer 41 so that the temperature change of the surface of the heater 3 after the repair is restored to the level when the heater 3 repaired with the first aluminum oxide layer 31 is used. This enables the product to maintain the quality of the original design.
FIG. 7 is a schematic enlarged view illustrating that the heater 3 according to an embodiment of the present invention is formed with an Nth alumina layer 3N +1 on the surface of the Nth alumina layer 4N after being used for a certain period of time; FIG. 8 is a graph showing the temperature profile of a wafer on a heater according to the present invention; fig. 9 is a flowchart showing a method for repairing a heater surface according to an embodiment of the present invention.
Referring to fig. 7 to 9, the method for repairing a heater surface according to an embodiment of the present invention further includes: a step (S20) of forming a third aluminum oxide layer (i.e., a third repair layer) 33 on the surface of the second aluminum oxide layer (i.e., the second deposit layer) 42 formed on the second aluminum oxide layer 32; a step (S30) of acquiring a thickness distribution of the second aluminum fluoride layer 42 and determining a formation thickness distribution of the third aluminum oxide layer 33; and a step (S40) of repairing the third aluminum oxide layer 33 based on the determined thickness distribution.
As shown in fig. 7, according to the method for repairing a heater surface according to the embodiment of the present invention, in step S20, as the chemical vapor deposition is performed, a new aluminum fluoride layer, i.e., the second aluminum oxide layer 42 is continuously deposited on the surface where the new aluminum oxide layer, i.e., the second aluminum oxide layer 32 is repaired, and thus it is necessary to repair the third aluminum oxide layer 33 on the surface of the second aluminum fluoride layer 42. Accordingly, the heater 3 having the third aluminum oxide layer 33 repaired can have a surface with a high degree of flatness, and the film quality of the deposited material can be ensured. The step S20 can be implemented by repeating the steps S11 to S13, and therefore, the description thereof is omitted.
As a method of measuring and acquiring the thickness of the deposited body layer of the first aluminum fluoride layer 41, the second aluminum fluoride layer 42, or the like, a contact measurement method, an ultrasonic measurement method, a radiation source measurement method, a laser measurement method, or the like may be employed, and the measured thickness distribution is acquired by a sensor or the like. Since the thickness distribution of the heating plate 7 of the heater 3 is fixed, the thickness distribution of the heating plate 7 can be ignored. If the height of the heater 3 needs to be adjusted as the life cycle of the heater 3 becomes longer, the height of the heater plate support part 6 for supporting the heater plate 7 can be adjusted, so that the heater 3 can be maintained in the initial use state, and the quality of the product can be maintained for a long time. Accordingly, a surface-repaired new aluminum oxide layer of an aluminum fluoride layer can be formed on the surface of the aluminum oxide layer, so that the life cycle of the heater 3 can be extended, the number of times of replacement of the heater 3 can be reduced, and the heater 3 can be used semi-permanently and thus the life cycle of the heater can be increased, thereby increasing the life span of the heater.
Returning to fig. 2, as can be seen from a comparison of fig. 8 with fig. 2, the temperature change (temperature difference) of the central portion and the edge portion of the surface of the heater 3 in fig. 8 is significantly smaller than that in fig. 2. Accordingly, temperature variation of the central portion and the edge portion of the surface of the heater 3 is minimized, whereby the amount of heat emitted from the entire surface of the heater 3 can be made more uniform, so that the yield of products can be increased, and the cost caused by replacement of the heater can be reduced, so that the production cost can be reduced.
FIG. 9 is a flow chart showing a method for repairing a heater surface according to an embodiment of the present invention; fig. 10 is a flowchart showing a method for repairing a heater surface according to another embodiment of the present invention.
It should be understood that, although the steps in the flowcharts of fig. 9 and 10 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least some of the steps in fig. 9 and 10 may include multiple sub-steps or multiple stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of performing the sub-steps or stages is not necessarily sequential, but may be performed alternately or alternately with other steps or at least some of the sub-steps or stages of other steps.
The method for repairing the heater surface according to the present invention is not limited to the existing cvd apparatus shown in fig. 1, and may be applied to other cvd apparatuses related to cvd technology, and is not necessarily limited to cvd apparatuses that generate aluminum fluoride during cvd. The method for repairing the heater surface of the present invention may be employed as long as substances affecting the quality of the deposited body and the efficiency of the heater are generated during the chemical reaction.
In addition, as shown in fig. 11, there is also provided a chemical vapor deposition apparatus according to an embodiment of the present invention, including: a heater 3; a monitoring device 8 for monitoring a first aluminum fluoride layer 41 formed on a surface of the heater 3 during a chemical reaction (e.g., chemical vapor deposition); a measuring device 9 for measuring a thickness distribution of the first aluminum fluoride layer 41 and acquiring the thickness distribution of the first aluminum fluoride layer 41; and a repair nozzle 10 for spraying repair powder to the surface of the heater 3 based on the thickness distribution until the thickness distribution is uniformly distributed when the first aluminum fluoride layer 41 is unevenly distributed with respect to the thickness distribution. The monitoring device does not have to monitor the first aluminum fluoride layer 41 during the chemical reaction, but may monitor the first aluminum fluoride layer at intervals of time or at predetermined times of the chemical reaction.
The thickness measurement can be performed by a measuring device using a thickness measurement method such as an optical measurement method or a mechanical measurement method. For example, the measuring device may be a measuring device waiting for interference fringes, a surface roughness meter, or the like, without being limited thereto.
In one embodiment, the monitoring device and the measuring device may be the same device. The monitoring device and the measuring device may be depth cameras, for example. After the image of the surface of the heater is collected by the depth camera, if the surface of the heater is provided with the deposition body layer, different parts of the image have color difference or darkness difference, so that the deposition body layer formed on the surface of the heater can be monitored by the depth camera. The distance from the depth camera to the surface of the heater can be measured by the depth camera by utilizing the principle of structured light ranging, so that the thickness distribution of the deposited body layer can be obtained by the depth camera.
In one embodiment, the chemical vapor deposition apparatus may further implement the steps of the method for repairing the heater surface in each of the above embodiments.
It will be understood by those skilled in the art that the structure of the chemical vapor deposition apparatus shown in fig. 11 is only a schematic structural diagram of a part of the structure related to the present application, and does not constitute a limitation of the chemical vapor deposition apparatus to which the present application is applied, and a specific chemical vapor deposition apparatus may include more or less components than those shown in the drawings, or combine some components, or have different arrangements of components.
The heater surface repairing method and the chemical vapor deposition apparatus according to the present invention have been described in detail, and those skilled in the art can realize other embodiments by changing or replacing the above embodiments according to the disclosure of the present application without departing from the scope of the technical idea of the present invention.
Claims (12)
1. A method of repairing a heater surface, comprising:
cleaning the cavity to which the heater belongs by cleaning gas, wherein the cleaning gas comprises fluorine-containing gas;
monitoring a deposition body layer formed on the heater surface, the deposition body layer comprising an aluminum fluoride layer;
obtaining the thickness distribution of the sedimentary body layer;
and when the thickness distribution is uneven, spraying repair powder to the surface of the heater through a nozzle based on the thickness distribution until the thickness distribution is even, wherein the repair powder comprises one or a combination of alumina powder, zirconia powder and titania powder.
2. The method of repairing a heater surface of claim 1, further comprising, prior to said monitoring a deposited body layer formed on the heater surface:
and forming a protective layer on the surface of the heater, wherein the protective layer comprises one or the combination of an aluminum oxide layer, a zirconium oxide layer and a titanium oxide layer.
3. The method of repairing a heater surface according to claim 1, wherein after spraying the repair powder to the heater surface, the repair powder remaining on the heater surface is solidified by activating the heater to form a desired repair layer; and/or
The thickness distribution is measured by a measuring device using an optical measuring method or a mechanical measuring method.
4. The method of repairing a heater surface according to any one of claims 1 to 3,
the aluminum fluoride layer does not completely cover the surface of the heater.
5. The method of claim 1, further comprising, after said obtaining a thickness profile of the deposited body layer:
acquiring a thickness maximum value and a thickness minimum value corresponding to the thickness distribution;
calculating to obtain a thickness difference value according to the thickness maximum value and the thickness minimum value;
and when the thickness difference is larger than a preset threshold value, judging that the thickness distribution is uneven distribution.
6. The method of repairing a heater surface according to claim 1,
the depositor layer is a layer of a mixture of components or a layered structure or combination of components.
7. The method for repairing a heater surface according to claim 1, wherein a spray time for spraying the repair powder to the heater surface is controlled based on the thickness distribution, the spray time being longer where the thickness is smaller.
8. The method of repairing a heater surface of claim 7, further comprising, after said spraying repair powder onto said heater surface:
the heater is heated to more than 500 ℃ to solidify the repair powder.
9. The method of repairing a heater surface of claim 1, wherein said spraying a repair powder onto said heater surface comprises:
spraying the repair powder onto the heater surface with a carrier gas, the carrier gas comprising an inert gas.
10. The method of repairing a heater surface according to claim 9,
the size of the repair powder is 1 to 3 micrometers.
11. The method of repairing a heater surface according to claim 1,
the injection includes a continuous injection and an intermittent injection.
12. A chemical vapor deposition apparatus for performing the method of repairing a heater surface according to any one of claims 1 to 11, comprising:
a heater;
monitoring means for monitoring a deposition body layer formed on the heater surface, the deposition body layer comprising an aluminium fluoride layer;
a measuring device for measuring a thickness distribution of the deposit layer and acquiring the thickness distribution;
and the repair nozzle is used for spraying repair powder to the surface of the heater based on the thickness distribution when the thickness distribution is not uniform until the thickness distribution is uniform, wherein the repair powder comprises one or a combination of alumina powder, zirconia powder and titania powder.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2009242835A (en) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | Film forming method and film forming apparatus |
| KR20140001023A (en) * | 2012-06-27 | 2014-01-06 | 이도형 | Aln heater cleaning device for semiconductor manufacturing apparatus and cleaning method thereof |
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| KR101465640B1 (en) * | 2014-08-08 | 2014-11-28 | 주식회사 펨빅스 | CVD Process Chamber Components with Anti-AlF3 Coating Layer |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009242835A (en) * | 2008-03-28 | 2009-10-22 | Tokyo Electron Ltd | Film forming method and film forming apparatus |
| KR20140001023A (en) * | 2012-06-27 | 2014-01-06 | 이도형 | Aln heater cleaning device for semiconductor manufacturing apparatus and cleaning method thereof |
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