CN111769815A - Method for preparing template with high piezoelectric performance - Google Patents
Method for preparing template with high piezoelectric performance Download PDFInfo
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- CN111769815A CN111769815A CN202010691106.6A CN202010691106A CN111769815A CN 111769815 A CN111769815 A CN 111769815A CN 202010691106 A CN202010691106 A CN 202010691106A CN 111769815 A CN111769815 A CN 111769815A
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 229910052706 scandium Inorganic materials 0.000 claims abstract description 9
- 239000013077 target material Substances 0.000 claims description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000010408 film Substances 0.000 claims description 14
- -1 lithium tantalate compound Chemical class 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 229910052594 sapphire Inorganic materials 0.000 claims description 8
- 239000010980 sapphire Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 7
- 238000005516 engineering process Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910002601 GaN Inorganic materials 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 238000003723 Smelting Methods 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000001513 hot isostatic pressing Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- 229910017141 AlTa Inorganic materials 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000010897 surface acoustic wave method Methods 0.000 abstract description 7
- 230000008878 coupling Effects 0.000 abstract description 4
- 238000010168 coupling process Methods 0.000 abstract description 4
- 238000005859 coupling reaction Methods 0.000 abstract description 4
- 230000009977 dual effect Effects 0.000 abstract description 4
- 230000008859 change Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
Abstract
The invention provides a method for preparing a template with high piezoelectric performance, which comprises the following steps: 1) preparing a substrate material; 2) pretreating the surface of a substrate material; 3) and growing an AlScTaN film on the surface of the pretreated substrate material by adopting an Al/Sc/Ta simple substance or dual or triple alloy target. By adopting the preparation method, Sc and Ta can be doped in the prepared AlScTaN film to change lattice parameters, so that the piezoelectric property and the electromechanical coupling coefficient of the AlScTaN film are improved, and the prepared template can be better suitable for application based on bulk acoustic waves and surface acoustic wave devices.
Description
Technical Field
The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing a template with high piezoelectric property.
Background
The filters mainly include a film bulk acoustic resonator Filter (FBAR), a surface acoustic wave filter (SAW), and a bulk acoustic wave filter (BAW). FBARs are used more in future single-chip multi-band wireless communication RF front-end systems and have a size advantage compared to SAW filters. The filters are typically in LiNbO3In recent years, attention has been paid to bulk piezoelectric materials that are suitable for integration with other devices on the same substrate. The SAW propagation speed of the AlN thin film is the fastest, and the AlN SAW device has good chemical and thermal stability, has extremely high sensitivity to external environments such as pressure, temperature, stress, gas and the like, is compatible with the conventional traditional Si CMOS technology, thereby becoming a key part for passive sensing, wireless sensing and mobile signal processing, and the AlN is mature in the SAW/BAW filter and has been commercialized. However, AlN for saw applications is inherently limited by its low electromechanical coupling coefficient (K2), typically in the range of less than 1%, which is especially important for saw-based applications such as sensors, drivers, and saw-based microfluidics. Therefore, lattice parameters can be changed by doping Sc and Ta into AlN, as the concentration of Sc and Ta of the wurtzite phase is increased, an ion potential well is reduced, the displacement of ions in an electric field is increased, dielectric and piezoelectric response is increased, an inherent alloying effect is formed, the topological structure of the surface is greatly influenced, the elastic softening along the lattice parameter c is intensified, and the inherent sensitivity of axial strain is remarkably improved, so that the piezoelectric constant and the electromechanical coupling coefficient are increased, and the prepared template can be better suitable for applications based on bulk acoustic wave and surface acoustic wave devices (such as sensors, surface acoustic wave devices, and the like,Drivers and surface acoustic wave based microfluidics, etc.).
Disclosure of Invention
The technical problem to be solved by the invention is to provide a method for preparing a template with high piezoelectric performance.
In order to solve the problems, the invention adopts the following technical scheme:
a method of making a template for high voltage performance comprising the steps of:
1) preparing a substrate material;
2) pretreating the surface of a substrate material;
3) growing an AlScTaN film on the surface of the pretreated substrate material.
As an alternative embodiment, in step 1), the substrate material is a silicon or germanium substrate material, or a substrate material of a compound of zinc oxide, sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium arsenide, indium phosphide, lithium niobate, and lithium tantalate.
As an alternative embodiment, in step 1), the substrate material is a semiconductor substrate material plated with a buffer layer, and the buffer layer includes, but is not limited to, an aluminum, molybdenum or nickel metal material thin film, or a zinc oxide, sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium arsenide, indium phosphide, lithium niobate, lithium tantalate thin film.
As a preferred embodiment, the pretreatment conditions in step 2) are: the radio frequency power range is 10-40W, the argon flow range is 10-400sccm, and the duration is 30-80 s.
As a preferred embodiment, in step 3), growing an alstan film on the pretreated substrate material by adopting a reactive magnetron sputtering technology; the preparation conditions were as follows: the pressure of the reaction chamber is 0.1-5pa, the flow rate of nitrogen is 5-500sccm, the flow rate of argon is 5-500sccm, the sputtering power is 0.1-15KW, and the temperature is less than 1000 ℃.
As a preferred embodiment, in the step 3), the grown AlScTaN film has a thickness of 5nm-20 um.
As an optional implementation scheme, in step 3), the target material may be an AlScTa alloy target material, or a dual target material composed of an AlSc alloy target material and a Ta target material, or a dual target material composed of an alata alloy target material and a Sc target material, or a dual target material composed of an sctta alloy target material and an Al target material.
In a preferred embodiment, the Sc content is 0.1 to 50 at%, and the Ta content is 0.001 to 10 at%.
In a more preferred embodiment, the Sc content is 35 to 45 at% and the Ta content is 1 to 5 at% in each target.
As an alternative embodiment, the target material used in step 3) is prepared by a high-temperature smelting furnace using a refractory crucible, wherein the refractory crucible is a nitrided or boronated tantalum crucible, or is prepared by a TaN or TaB powder high-temperature sintering or hot isostatic pressing process.
As a preferred embodiment, in the step 3), the Sc content of the grown AlScTaN film is 0.1-50 at%, and the Ta content is 0.001-10 at%.
The invention also comprises the high-voltage electric performance template prepared by the method.
The invention has the following beneficial effects:
by adopting the preparation method, Sc and Ta can be doped in the prepared AlScTaN film to change the lattice parameter. With the increase of the concentration of the Sc and Ta of the wurtzite phase, an ion potential well is reduced, the displacement of ions in an electric field is increased, the dielectric and piezoelectric response is increased, an internal alloying effect is formed, the topological structure of the surface is greatly influenced, the elastic softening along the lattice parameter c is aggravated, and the inherent sensitivity of axial strain is obviously improved, so that the piezoelectric constant and the electromechanical coupling coefficient are increased, the piezoelectric performance is improved by 4-5 times, and the prepared template can be better suitable for the application of devices based on bulk acoustic waves and surface acoustic waves (such as sensors, drivers, microfluids based on surface acoustic waves and the like).
Drawings
Fig. 1 is a schematic flow diagram of an embodiment of a method of making a high piezoelectric performance template of the present invention.
FIG. 2 is a schematic structural diagram of the AlScTaN template prepared by the preparation method of the invention.
Detailed Description
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the scope of the claims.
Example 1
A method for preparing a template with high piezoelectric performance mainly comprises the following steps: the preparation of a substrate material 1, the pretreatment of the surface of the substrate material 1 and the preparation of an aluminum scandium tantalum nitrogen (AlScTaN) film 2.
Fig. 1 and 2 show a schematic flow chart of the preparation of the aluminum scandium tantalum nitrogen (alstan) template and a schematic structural diagram of the prepared aluminum scandium tantalum nitrogen (alstan) template in this embodiment, respectively. The method for manufacturing the high piezoelectric performance template according to this embodiment will be described in detail with reference to the drawings.
1) The substrate material 1 is prepared (S1). In the present example, a silicon substrate was used as a substrate material, and the silicon single crystal substrate used was a produced standard specification polished substrate wafer, the surface of which was an EPI-ready polished surface subjected to RCA cleaning and had a roughness of less than 0.3nm, and the back surface of which was ground at a level of 1 ± 0.2 μm.
2) The surface of the base material 1 is pretreated (S2). The pretreatment conditions are as follows: the RF power is 20W, the argon flow range is 300sccm, and the duration is 60 s.
By adopting the pretreatment technology, oxide impurities on the surface of the substrate material can be removed, bombardment energy is accumulated, the activity and the migration capability of the adsorbed atoms are enhanced, and a high-quality growth surface is provided for the next step of growing the aluminum-scandium-tantalum-nitrogen (AlScTaN) film.
3) An aluminum scandium tantalum nitrogen (alstan) thin film 2 is grown on the basis of the surface of the pretreated substrate material 1 (S3).
In this embodiment, magnetron sputtering (Sputter) is adopted, the pressure in the reaction chamber is 0.5pa, the flow rate of nitrogen is 150sccm, the flow rate of argon is 20sccm, the sputtering power is 4KW, and the temperature is 500 ℃.
The thickness of the finally prepared template is 500nm, the contents of Sc and Ta are 43at percent Sc and 5at percent Ta, and the piezoelectric coefficient is 26.5 pC/N.
Example 2
A method for preparing a template with high piezoelectric performance mainly comprises the following steps: the preparation of a substrate material 1, the pretreatment of the surface of the substrate material 1 and the preparation of an aluminum scandium tantalum nitrogen (AlScTaN) film 2. The method specifically comprises the following steps:
1) the substrate material 1 is prepared (S1). In the embodiment, a sapphire substrate is used as a substrate material, the sapphire substrate is a standard-specification polished substrate sheet, the surface of the sapphire substrate is an EPI-ready polished surface subjected to RCA cleaning, the roughness is less than 0.2nm, the back surface of the sapphire substrate is in a grinding grade, and the roughness is 1 +/-0.2 microns.
2) The surface of the base material 1 is pretreated (S2). The pretreatment conditions are as follows: the RF power is 30W, the argon flow range is 250sccm, and the duration is 50 s.
By adopting the pretreatment technology, oxide impurities on the surface of the substrate material can be removed, bombardment energy is accumulated, the activity and the migration capability of the adsorbed atoms are enhanced, and a high-quality growth surface is provided for the next step of growing the aluminum-scandium-tantalum-nitrogen (AlScTaN) film.
3) An aluminum scandium tantalum nitrogen (alstan) thin film 2 is grown on the basis of the surface of the pretreated substrate material 1 (S3).
In this embodiment, magnetron sputtering (Sputter) is adopted, the pressure in the reaction chamber is 0.5pa, the flow rate of nitrogen is 150sccm, the flow rate of argon is 20sccm, the sputtering power is 4KW, and the temperature is 500 ℃.
The thickness of the finally prepared template is 10um, the contents of Sc and Ta are 40 at% Sc and 1 at% Ta, and the piezoelectric coefficient is 21 pC/N.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (12)
1. A method of making a template for high voltage performance comprising the steps of:
1) preparing a substrate material;
2) pretreating the surface of a substrate material;
3) growing an AlScTaN film on the surface of the pretreated substrate material.
2. The method according to claim 1, wherein in step 1), the substrate material is a silicon, germanium substrate material, or a zinc oxide, sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium arsenide, indium phosphide, lithium niobate, lithium tantalate compound substrate material.
3. The method according to claim 1, wherein in step 1), the substrate material is a semiconductor substrate material plated with a buffer layer, the buffer layer including but not limited to a thin film of aluminum, molybdenum or nickel metallic material, or a thin film of zinc oxide, sapphire, silicon carbide, gallium nitride, aluminum nitride, gallium arsenide, indium phosphide, lithium niobate, lithium tantalate.
4. The method according to claim 1, wherein the pretreatment conditions in step 2) are: the radio frequency power range is 10-40W, the argon flow range is 10-400sccm, and the duration is 30-80 s.
5. The method according to claim 1, wherein in step 3), the AlScTaN film is grown on the pretreated substrate material by using a reactive magnetron sputtering technology; the preparation conditions were as follows: the pressure of the reaction chamber is 0.1-5pa, the flow rate of nitrogen is 5-500sccm, the flow rate of argon is 5-500sccm, the sputtering power is 0.1-15KW, and the temperature is less than 1000 ℃.
6. The method according to claim 1, wherein the grown AlScTaN film in step 3) has a thickness of 5nm-20 um.
7. The method according to claim 1, wherein the target material used in step 3) is an AlScTa alloy target material, or an Al, Ta, Sc metal triple target material, or a double target material consisting of an AlSc alloy target material and a Ta target material, or a double target material consisting of an AlTa alloy target material and a Sc target material, or a double target material consisting of an ScTa alloy target material and an Al target material.
8. The method according to claim 7, wherein the Sc content is 0.1-50 at% and the Ta content is 0.001-10 at% in each target.
9. The method of claim 8, wherein the Sc content of each target is 35-45 at% and the Ta content is 1-5 at%.
10. The method according to claim 7, characterized in that the target material used in step 3) is prepared by a high temperature smelting furnace using a refractory crucible, which is a nitrided or boronated tantalum crucible, or by a high temperature sintering or hot isostatic pressing process of TaN or TaB powder.
11. The method according to any of claims 1-10, wherein in step 3) the grown alstan film has a Sc content of 0.1-50 at% and a Ta content of 0.001-10 at%.
12. A high piezoelectric performance template made according to the method of any one of claims 1 to 11.
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| CN2020106091955 | 2020-06-29 | ||
| CN202010609195 | 2020-06-29 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106253872A (en) * | 2015-09-17 | 2016-12-21 | 石以瑄 | Regulatable SAW resonator and filter |
| CN106899275A (en) * | 2015-12-18 | 2017-06-27 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
-
2020
- 2020-07-17 CN CN202010691106.6A patent/CN111769815A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106253872A (en) * | 2015-09-17 | 2016-12-21 | 石以瑄 | Regulatable SAW resonator and filter |
| CN106899275A (en) * | 2015-12-18 | 2017-06-27 | 三星电机株式会社 | Acoustic resonator and its manufacture method |
Non-Patent Citations (2)
| Title |
|---|
| HONGYAN LIU等: "Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering", 《APPLIED SURFACE SCIENCE》 * |
| MORITO AKIYAMA等: "Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering", 《ADVANCED MATERIALS》 * |
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