CN111769200A - Quantum dot light emitting device, quantum dot layer patterning method and display device - Google Patents
Quantum dot light emitting device, quantum dot layer patterning method and display device Download PDFInfo
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- CN111769200A CN111769200A CN202010657241.9A CN202010657241A CN111769200A CN 111769200 A CN111769200 A CN 111769200A CN 202010657241 A CN202010657241 A CN 202010657241A CN 111769200 A CN111769200 A CN 111769200A
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 286
- 238000000034 method Methods 0.000 title claims abstract description 72
- 238000000059 patterning Methods 0.000 title claims abstract description 61
- 239000000463 material Substances 0.000 claims abstract description 119
- 239000000758 substrate Substances 0.000 claims abstract description 98
- 238000002347 injection Methods 0.000 claims description 51
- 239000007924 injection Substances 0.000 claims description 51
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 39
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 37
- 230000000903 blocking effect Effects 0.000 claims description 35
- 230000005525 hole transport Effects 0.000 claims description 34
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 14
- 230000004888 barrier function Effects 0.000 claims description 13
- 230000003301 hydrolyzing effect Effects 0.000 claims description 12
- 238000006303 photolysis reaction Methods 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 125000003118 aryl group Chemical group 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 8
- 125000000217 alkyl group Chemical group 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical group CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 6
- 229910052801 chlorine Inorganic materials 0.000 claims description 6
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- -1 ethoxyl Chemical group 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- GRVDJDISBSALJP-UHFFFAOYSA-N methyloxidanyl Chemical group [O]C GRVDJDISBSALJP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000007062 hydrolysis Effects 0.000 abstract description 13
- 238000006460 hydrolysis reaction Methods 0.000 abstract description 13
- 238000007641 inkjet printing Methods 0.000 abstract description 7
- 238000001259 photo etching Methods 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 65
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 5
- CMWKITSNTDAEDT-UHFFFAOYSA-N 2-nitrobenzaldehyde Chemical compound [O-][N+](=O)C1=CC=CC=C1C=O CMWKITSNTDAEDT-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 4
- 229910015711 MoOx Inorganic materials 0.000 description 3
- 239000003446 ligand Substances 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
- 229910003363 ZnMgO Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
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- 229910052593 corundum Inorganic materials 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 125000005372 silanol group Chemical group 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
Abstract
The invention discloses a quantum dot light-emitting device, a quantum dot layer patterning method and a display device.A photosensitive material film layer is formed on a substrate on which an oxide layer is formed before a quantum dot layer is formed, the photosensitive material is modified on the substrate after hydrolysis, the photosensitive material generates a coordination group after being irradiated by light with a preset wavelength to be combined with the quantum dot layer, so that the quantum dot at the position of a reserved area is tightly combined with the photosensitive material, and the photosensitive material in the light irradiation area without the preset wavelength is not combined with the quantum dot layer; finally, removing the quantum dots which are not combined with the photosensitive material in the quantum dot layer to complete the patterning of the quantum dot layer; compared with the prior art, the method can complete the patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot light-emitting device, a quantum dot layer patterning method and a display device.
Background
With the deep development of the Quantum dot preparation technology, the stability and the Light Emitting efficiency of the Quantum dots are continuously improved, the research on Quantum dot electroluminescent diodes (QLEDs) is continuously deep, and the application prospect of the QLEDs in the display field is gradually bright. However, the generation efficiency of the QLED has not reached the level of mass production, and the most important reason is that the high resolution patterning technology of the QLED has not been broken through.
The quantum dots are zero-dimensional nano semiconductor materials, the size of each of the three dimensions of the quantum dots is not more than twice the exciton Bohr radius of the corresponding semiconductor material, and when the patterned quantum dots are manufactured in the prior art, due to the characteristics of the inorganic nanoparticles of the quantum dots, the patterned quantum dots cannot be manufactured by an evaporation film-forming and patterning method.
The prior art generally produces patterned quantum dots by ink-jet printing methods, which are difficult to achieve with high resolution. In the prior art, in order to improve the resolution of a product, a photolithography method is adopted to manufacture patterned quantum dots, and the photolithography method comprises an exposure process, and the exposure process easily affects the performance of the quantum dots.
In summary, the prior art cannot produce quantum dots with high resolution and good performance.
Disclosure of Invention
The quantum dot light-emitting device, the quantum dot layer patterning method and the display device provided by the embodiment of the invention are used for forming quantum dots with high resolution and good performance.
The embodiment of the invention provides a quantum dot light-emitting device, which comprises: the quantum dot structure comprises a substrate, an oxide layer positioned on the substrate, a quantum dot layer positioned on one side of the oxide layer, which faces away from the substrate, and a connecting layer positioned between the oxide layer and the quantum dot layer; the silanol of the connecting layer is combined with the hydroxyl of the oxide layer, and the coordination group of the connecting layer is combined with the quantum dot layer; wherein the content of the first and second substances,
the connecting layer is formed by hydrolyzing the photosensitive material and irradiating the photosensitive material with light with a preset wavelength; wherein the photosensitive material has: hydrolyzing to generate a silane part of the silanol, generating a photosensitive part of the coordinating group after the irradiation of the light with the preset wavelength, and connecting the silane part and the photosensitive part.
Optionally, in the above quantum dot light emitting device provided in the embodiment of the present invention, the photosensitive material is
Wherein, R1, R2 and R3 are respectively selected from one or more of methoxyl, ethoxyl, tertiary butyl, chlorine atom or acetate, R1, R2 and R3 are the same or different, and R4 is alkyl or aryl.
Optionally, in the quantum dot light emitting device provided in the embodiment of the present invention, the quantum dot light emitting device is of an upright structure, and the oxide layer is a hole transport layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises an anode positioned between the substrate and the hole transport layer, a hole injection layer positioned between the anode and the hole transport layer, an electron transport layer positioned on one side, away from the substrate, of the quantum dot layer, an electron injection layer positioned on one side, away from the substrate, of the electron transport layer, and a cathode positioned on one side, away from the substrate, of the electron injection layer.
Optionally, in the quantum dot light emitting device provided in the embodiment of the present invention, the quantum dot light emitting device is of an upright structure, and the oxide layer is an electron blocking layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises an anode, a hole injection layer, a hole transport layer, a hole barrier layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the electron barrier layer, the hole injection layer is positioned between the anode and the electron barrier layer, the hole transport layer is positioned between the hole injection layer and the electron barrier layer, the hole barrier layer is positioned on one side, away from the substrate, of the quantum dot layer, the electron transport layer is positioned on one side, away from the substrate, of the hole barrier layer, the electron transport layer is positioned on one side, away from the substrate, of the electron transport.
Optionally, in the quantum dot light emitting device provided in the embodiment of the present invention, the quantum dot light emitting device is an inverted structure, and the oxide layer is an electron transport layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises a cathode positioned between the substrate and the electron transport layer, an electron injection layer positioned between the cathode and the electron transport layer, a hole transport layer positioned on one side, away from the substrate, of the quantum dot layer, a hole injection layer positioned on one side, away from the substrate, of the hole transport layer, and an anode positioned on one side, away from the substrate, of the hole injection layer.
Optionally, in the quantum dot light emitting device provided in the embodiment of the present invention, the quantum dot light emitting device is an inverted structure, and the oxide layer is a hole blocking layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises a cathode, an electron injection layer, an electron transport layer, an electron blocking layer, a hole transport layer, a hole injection layer and an anode, wherein the cathode is positioned between a substrate and a hole blocking layer, the electron injection layer is positioned between the cathode and the hole blocking layer, the electron transport layer is positioned between the electron injection layer and the hole blocking layer, the electron blocking layer is positioned on one side, away from the substrate, of a quantum dot layer, the hole transport layer is positioned on one side, away from the substrate, of the electron blocking layer, the hole injection layer is positioned on one side, away from the substrate, of the hole transport.
Correspondingly, the embodiment of the invention also provides a display device which comprises the quantum dot light-emitting device provided by the embodiment of the invention.
Correspondingly, the embodiment of the invention also provides a quantum dot layer patterning method, which comprises the following steps:
forming a photosensitive material film layer on the substrate on which the oxide layer is formed; wherein the photosensitive material has: hydrolyzing to generate a silane part in which silanol is combined with a hydroxyl group of the oxide layer, generating a photosensitive part of a coordinating group after irradiation of light with a preset wavelength, and a connecting part connecting the silane part and the photosensitive part;
after the silane part is hydrolyzed to generate the silanol and the hydroxyl of the oxide layer are combined, irradiating the reserved area of the photosensitive material film layer by adopting the light with the preset wavelength, and generating the coordination group by the photolysis reaction of the photosensitive part of the reserved area;
forming a quantum dot layer, the coordinating group generated in the retention region being bonded to the quantum dot layer;
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer to form a patterned quantum dot layer in the reserved area.
Optionally, in the patterning method provided in an embodiment of the present invention, the forming a photosensitive material film layer on the substrate on which the oxide layer is formed specifically includes:
forming an oxide layer on the substrate;
and spin-coating a photosensitive material on the oxide layer to form the photosensitive material film layer.
Optionally, in the patterning method provided in an embodiment of the present invention, the irradiating the reserved area of the photosensitive material film with the light with the preset wavelength specifically includes:
and shielding the film layer by adopting a mask plate, wherein the mask plate comprises a light transmission area and a light shading area, and the light transmission area corresponds to a reserved area which is irradiated by light in the photosensitive material film layer.
Optionally, in the above patterning method provided in an embodiment of the present invention, the forming a quantum dot layer specifically includes:
and forming the quantum dot layer by adopting a spin coating mode.
Optionally, in the above patterning method provided in an embodiment of the present invention, the removing the quantum dots in the quantum dot layer that are not bonded to the coordinating group specifically includes:
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer by using a solvent.
Optionally, in the above patterning method provided in an embodiment of the present invention, the silane moiety is hydrolyzed to combine with the hydroxyl group of the oxide layer, and specifically includes:
after the photosensitive material film layer is formed on the side, away from the substrate, of the oxide layer, standing for a preset time, and hydrolyzing and combining silane parts of the photosensitive material with hydroxyl groups of the oxide layer;
and removing residues which are not bonded on the oxide layer by cleaning with a solvent.
Optionally, in the above patterning method provided in an embodiment of the present invention, the silane moiety is hydrolyzed to combine with the hydroxyl group of the oxide layer, and specifically includes:
baking the substrate on which the photosensitive material film layer is formed, wherein silane parts of the photosensitive material are hydrolyzed and combined with hydroxyl groups of the oxide layer;
and removing residues which are not bonded on the oxide layer by cleaning with a solvent.
Optionally, in the above patterning method provided in this embodiment of the present invention, the photosensitive material is
Wherein, R1, R2 and R3 are methoxy, ethoxy, tert-butyl, chlorine atom or acetate respectively, and R4 is alkyl or aryl.
The embodiment of the invention has the following beneficial effects:
according to the quantum dot light-emitting device, the quantum dot layer patterning method and the display device, before the quantum dot layer is formed, the photosensitive material film layer is formed on the substrate with the oxide layer, the photosensitive material is provided with the silane part which is hydrolyzed to generate silanol, and the oxide layer is generally provided with hydroxyl, so that the silanol generated by hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, and the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates the coordination group after being irradiated by light with a preset wavelength, so that the reserved area of the film layer is irradiated by the light with the preset wavelength, and the photosensitive part generates photolysis reaction to generate the coordination group; then forming a quantum dot layer, wherein the coordination group generated in the reserved region is combined with the quantum dot layer, so that the quantum dot at the position of the reserved region is tightly combined with the photosensitive material; at the moment, the photosensitive material in the reserved area of the film layer is combined with the quantum dot layer, and the photosensitive material in the light irradiation area of the film layer, which is not provided with the preset wavelength, is not combined with the quantum dot layer; finally, removing the quantum dots which are not combined with the photosensitive material in the quantum dot layer to complete the patterning of the quantum dot layer; compared with the prior art, the method can complete the patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
Drawings
Fig. 1 is a schematic structural diagram of a quantum dot light-emitting device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of another quantum dot light-emitting device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another quantum dot light-emitting device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of another quantum dot light-emitting device according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of another quantum dot light-emitting device according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of another quantum dot light-emitting device according to an embodiment of the present invention;
fig. 7 is a flowchart of a method for patterning a quantum dot layer according to an embodiment of the present invention;
fig. 8 is a second flowchart of a manufacturing method of a quantum dot layer patterning method according to an embodiment of the present invention;
fig. 9 is a third flowchart of a manufacturing method of a quantum dot layer patterning method according to an embodiment of the present invention;
FIG. 10 is a fourth flowchart of a method for forming a quantum dot layer pattern according to an embodiment of the present invention;
fig. 11A to 11L are schematic structural diagrams illustrating a manufacturing method of a quantum dot layer patterning method according to an embodiment of the invention after each step is performed.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of a method for patterning a quantum dot layer, a method for manufacturing the same, and a display device according to embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
The film thicknesses and shapes of the various layers in the drawings do not reflect the true scale of the method of patterning the quantum dot layer and are intended to be illustrative only of the present disclosure.
An embodiment of the present invention provides a quantum dot light emitting device, as shown in fig. 1 and 2, including: a substrate 1, an oxide layer 2 on the substrate 1, a quantum dot layer 3 on a side of the oxide layer 2 facing away from the substrate 1, and a connection layer 4 between the oxide layer 2 and the quantum dot layer 3; the silanol-si (oh)3 of the connection layer 4 is bonded to the hydroxyl group of the oxide layer 2, and the coordinating group (-COOH) of the connection layer 4 is bonded to the quantum dot layer 3; wherein the content of the first and second substances,
the connection layer 4 is formed by hydrolysis of the photosensitive material and irradiation of light of a predetermined wavelength (this part will be described later in detail); wherein the photosensitive material has: a silane moiety hydrolyzed to form silanol, a photosensitive moiety to form a coordinating group upon irradiation with light of a predetermined wavelength, and a linking moiety to link the silane moiety and the photosensitive moiety.
The quantum dot light-emitting device provided by the embodiment of the invention is characterized in that the connecting layer is arranged between the oxide layer and the quantum dot layer, and the connecting layer is formed after the hydrolysis of the photosensitive material and the irradiation of light with a preset wavelength, so that before the quantum dot layer is formed, firstly, a photosensitive material film layer is formed on the substrate on which the oxide layer is formed, and as the photosensitive material has a silane part which is hydrolyzed to generate silanol, and the oxide layer generally has hydroxyl, the silanol generated by the hydrolysis of the photosensitive material can be combined with the hydroxyl of the oxide layer, so that the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates the coordination group after being irradiated by light with a preset wavelength, so that the reserved area corresponding to the film layer of the photosensitive material is irradiated by the light with the preset wavelength, and the photosensitive part generates photolysis reaction to generate the coordination group; then forming a quantum dot layer, wherein the coordination group generated in the reserved region is combined with the quantum dot layer, so that the quantum dot at the position of the reserved region is tightly combined with the photosensitive material; the photosensitive material in the reserved area is combined with the quantum dot layer, and the photosensitive material which is not irradiated by the light with the preset wavelength is not combined with the quantum dot layer; finally, removing the quantum dots which are not combined with the photosensitive material in the quantum dot layer to complete the patterning of the quantum dot layer; compared with the prior art, the method can complete the patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
In practical applications, in the quantum dot light emitting device provided by the embodiment of the present invention, the photosensitive material has a structure of
Wherein, R1, R2 and R3 can be one or more of methoxyl, ethoxyl, tertiary butyl, chlorine atom or acetate respectively, R1, R2 and R3 can be the same or different, and R4 is alkyl or aryl.
Specifically, in the structure of the photosensitive material, the-SiR 1R2R3 is a silane part and generates silanol after hydrolysis. Since the surface of the oxide layer on the substrate contains a large number of hydroxyl groups, after the photosensitive material film layer is formed on the oxide layer, silane moieties are hydrolyzed, for example, R1 ═ R2 ═ R3 ═ OMe (methoxy), by the mechanism of hydrolysis — si (OMe)3 → -si (oh)3, and then silanol-si (oh)3 moieties can react with the hydroxyl groups on the surface of the oxide layer to become siloxane, thereby being tightly bonded to the oxide layer. The specific hydrolysis mechanism is as follows:
specifically, the R4 moiety in the structure of the above photosensitive material is a linking function, and may be an alkyl group, an aromatic group, or the like, and there is no particular need for the R4 group as long as the silane moiety and the photosensitive moiety can be linked together, and most commonly, R4 is a hydrocarbon group or an aryl group.
Specifically, in the structure of the above photosensitive material
The photosensitive part can be decomposed into carboxyl and o-nitrobenzaldehyde after illumination (hv), namely the photosensitive part has the function of generating a coordinating group (carboxyl) after illumination, and the carboxyl can be bonded with any quantum dotAnd the carboxyl group is used as a ligand of the quantum dot, so that the quantum dot in the illumination area is tightly bonded on the substrate. The mechanism of the decomposition of the specific photosensitive moiety is as follows:
in specific implementation, the light with the predetermined wavelength in the embodiment of the present invention generally refers to ultraviolet light with a wavelength in a range of 300nm to 400nm, and in this wavelength range, the photosensitive portion may undergo a photolysis reaction to generate carboxyl and o-nitrobenzaldehyde, the carboxyl is combined with the quantum dot, and the o-nitrobenzaldehyde is washed away by the solvent.
In specific implementation, the time of the light irradiation with the preset wavelength may be 5s-30s, and the dose of the light irradiation with the preset wavelength may be 10Mj/cm2-80Mj/cm2。
In practice, the thickness of the connection layer can be made very thin, for example less than 1nm, to achieve a tight connection between the oxide layer and the quantum dot layer.
Specifically, in the quantum dot light emitting device provided in the embodiment of the present invention, a principle of forming the connection layer is as follows: when an oxide layer is formed on a substrate, the oxide layer generally contains a large number of hydroxyl groups, and when a photosensitive material film layer is formed on the oxide layer, silanol formed by partial hydrolysis of silane of the photosensitive material can be tightly bonded to the surface of the oxide layer. After the substrate modified by the photosensitive material is irradiated by ultraviolet light, the photosensitive part is decomposed to release carboxyl, and the carboxyl is a coordination group of the quantum dot, so that the substrate can be tightly combined with the quantum dot. And the place without ultraviolet irradiation has no carboxyl group and can not be combined with the quantum dots. Therefore, the quantum dots are coated after illumination, the substrate is cleaned, carboxyl at the illumination position is tightly combined with the quantum dots, and the quantum dots at the non-illumination position are cleaned, so that the quantum dots are patterned. Taking the example that R1, R2 and R3 are all methoxy groups and the linking moiety R4 is a pentyl group, the specific process for forming the linking layer is as follows:
Specifically, since the electroluminescent device is generally divided into a forward structure and an inverted structure, the oxide layer is a former film layer of the quantum dot layer, and when the quantum dot light-emitting device is in the forward structure, the oxide layer may be a hole transport layer or an electron blocking layer; when the quantum dot light-emitting device is an inverted structure, the oxide layer may be an electron transport layer or a hole blocking layer.
The following is a description of a specific structure of the quantum dot light emitting device provided by the embodiment of the present invention.
In specific implementation, in the quantum dot light emitting device provided in the embodiment of the present invention, as shown in fig. 3, the quantum dot light emitting device is of an upright structure, and the oxide layer 2 may be a hole transport layer 5;
the quantum dot light emitting device further includes: an anode 6 located between the substrate 1 and the hole transport layer 5, a hole injection layer 7 located between the anode 6 and the hole transport layer 5, an electron transport layer 8 located on the side of the quantum dot layer 3 facing away from the substrate 1, an electron injection layer 9 located on the side of the electron transport layer 8 facing away from the substrate 1, and a cathode 10 located on the side of the electron injection layer 9 facing away from the substrate 1.
Specifically, the material of the hole transport layer may be an inorganic thin film such as NiO, WOx, MoOx, VOx, or inorganic nanoparticles such as NiO, WOx, MoOx, VOx, or an inorganic-organic hybrid system such as PESOT: PSS hybrid MoOx.
In specific implementation, in the quantum dot light emitting device provided in the embodiment of the present invention, as shown in fig. 4, the quantum dot light emitting device is of a positive structure, and the oxide layer 2 may be an electron blocking layer 11;
the quantum dot light emitting device further includes: an anode 6 located between the substrate 1 and the electron blocking layer 11, a hole injection layer 7 located between the anode 6 and the electron blocking layer 11, a hole transport layer 5 located between the hole injection layer 7 and the electron blocking layer 11, a hole blocking layer 12 located on the side of the quantum dot layer 3 facing away from the substrate 1, an electron transport layer 8 located on the side of the hole blocking layer 12 facing away from the substrate 1, an electron injection layer 9 located on the side of the electron transport layer 8 facing away from the substrate 1, and a cathode 10 located on the side of the electron injection layer 9 facing away from the substrate 1.
Specifically, the material of the electron blocking layer may be an insulating oxide material such as Al2O3, SiOx, or the like.
In specific implementation, in the quantum dot light emitting device provided in the embodiment of the present invention, as shown in fig. 5, the quantum dot light emitting device has an inverted structure, and the oxide layer 2 may be an electron transport layer 8;
the quantum dot light emitting device further includes: a cathode 10 located between the substrate 1 and the electron transport layer 8, an electron injection layer 9 located between the cathode 10 and the electron transport layer 8, a hole transport layer 5 located on the side of the quantum dot layer 3 facing away from the substrate 1, a hole injection layer 7 located on the side of the hole transport layer 5 facing away from the substrate 1, and an anode 6 located on the side of the hole injection layer 7 facing away from the substrate 1.
Specifically, the material of the electron transport layer may be an inorganic thin film such as ZnO, ZnMgO, TiO2, or inorganic nanoparticles such as ZnO, ZnMgO, TiO2, or the like.
In specific implementation, in the quantum dot light emitting device provided in the embodiment of the present invention, as shown in fig. 6, the quantum dot light emitting device has an inverted structure, and the oxide layer 2 may be a hole blocking layer 12;
the quantum dot light emitting device further includes: a cathode 10 located between the substrate 1 and the hole blocking layer 12, an electron injection layer 9 located between the cathode 10 and the hole blocking layer 12, an electron transport layer 8 located between the electron injection layer 9 and the hole blocking layer 12, an electron blocking layer 11 located on the side of the quantum dot layer 3 facing away from the substrate 1, a hole transport layer 5 located on the side of the electron blocking layer 11 facing away from the substrate 1, a hole injection layer 7 located on the side of the hole transport layer 5 facing away from the substrate 1, and an anode 6 located on the side of the hole injection layer 7 facing away from the substrate 1.
It should be noted that the principle of light emission of the electroluminescent device is as follows: the hole of the anode and the electron of the cathode are transmitted to the luminescent layer (quantum dot layer) for composite luminescence, because of the difference of energy level barriers between the anode and the luminescent layer and between the cathode and the luminescent layer, the electron and the hole are difficult to transmit, and the transmission rate and the number are greatly different, therefore, in order to balance the concentration of the electron and the hole, a hole injection layer, a hole transmission layer and an electron blocking layer are generally arranged between the luminescent layer (quantum dot layer) and the anode, and an electron injection layer, an electron transmission layer and a hole blocking layer are arranged between the luminescent layer (quantum dot layer) and the cathode. The film layer contacting with the quantum dot layer is made of oxide layer, so that the connection layer can be formed before the quantum dot layer is formed, and the connection layer is made of photosensitive material and has one end tightly combined with the substrate and one end tightly combined with the quantum dot layer through hydrolysis and illumination, so as to realize the patterning of the quantum dot layer.
Based on the same inventive concept, embodiments of the present invention further provide a method for patterning a quantum dot layer, as shown in fig. 7, which may include:
s701, forming a photosensitive material film layer on the substrate with the oxide layer; wherein the photosensitive material has: hydrolyzing to generate a silane part with silanol combined with hydroxyl of the oxide layer, and generating a photosensitive part of a coordination group and a connecting part for connecting the silane part and the photosensitive part after the irradiation of light with a preset wavelength;
s702, after the silane part is hydrolyzed to generate silanol to be combined with the hydroxyl of the oxide layer, irradiating the reserved area of the film layer by adopting light with a preset wavelength, and carrying out photolysis reaction on the photosensitive part of the reserved area to generate a coordination group;
s703, forming a quantum dot layer, and combining a coordination group generated in the reserved region with the quantum dot layer;
and S704, removing the quantum dots which are not combined with the coordination groups in the quantum dot layer to form a patterned quantum dot layer in the reserved area.
In the method for patterning the quantum dot layer according to the embodiment of the present invention, before forming the quantum dot layer, a photosensitive material film layer is formed on the substrate on which the oxide layer is formed, and the photosensitive material has a silane moiety that is hydrolyzed to form silanol, and the oxide layer generally has hydroxyl groups, so that the silanol formed by hydrolysis of the photosensitive material can be combined with the hydroxyl groups of the oxide layer, thereby modifying the photosensitive material on the substrate; the photosensitive material is provided with a photosensitive part which generates the coordination group after being irradiated by light with a preset wavelength, so that the reserved area of the film layer is irradiated by the light with the preset wavelength, and the photosensitive part generates photolysis reaction to generate the coordination group; then forming a quantum dot layer, wherein the coordination group generated in the reserved region is combined with the quantum dot layer, so that the quantum dot at the position of the reserved region is tightly combined with the photosensitive material; at the moment, the photosensitive material in the reserved area of the film layer is combined with the quantum dot layer, and the photosensitive material in the light irradiation area of the film layer, which is not provided with the preset wavelength, is not combined with the quantum dot layer; finally, removing the quantum dots which are not combined with the photosensitive material in the quantum dot layer to complete the patterning of the quantum dot layer; compared with the prior art, the method can complete the patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
In a specific implementation, in the patterning method provided in the embodiment of the present invention, the quantum dots not combined with the coordinating group in the quantum dot layer are removed, and specifically, the quantum dots not combined with the coordinating group in the quantum dot layer can be removed by using a solvent.
In order to realize a full-color display, the quantum dot layer generally includes patterned quantum dots of different colors, and the embodiment of the present invention takes the example that the quantum dot layer includes a first quantum dot layer, a second quantum dot layer, and a third quantum dot layer, and the method for patterning the quantum dot layer according to the embodiment of the present invention is described in detail with reference to the accompanying drawings.
In a specific implementation, in the patterning method provided by the embodiment of the present invention, the forming a photosensitive material film layer on the substrate on which the oxide layer is formed may specifically include:
s801, forming an oxide layer on a substrate;
specifically, as shown in fig. 11A, an oxide layer 2 is formed on a substrate 1, where the oxide layer 2 may be a hole transport layer, an electron blocking layer, an electron transport layer, or a hole blocking layer, and the specific structure may refer to the description in the above quantum dot light emitting device, which is not described herein again.
S802, spin-coating a photosensitive material on the oxide layer to form a film layer;
specifically, as shown in fig. 11B, a photosensitive material is spin-coated on the oxide layer 2 to form a photosensitive material film 41, where a straight line in the photosensitive material film 41 represents a connection portion, a circle represents a photosensitive portion, and a silane portion is directly schematically connected to the oxide layer 2.
In specific implementation, in the above patterning method provided by the embodiment of the present invention, as shown in fig. 11B, after the photosensitive material is spin-coated on the oxide layer 2 to form the photosensitive material film 41, the silane moiety is hydrolyzed to be combined with the hydroxyl group of the oxide layer 2, as shown in fig. 9, which may specifically include:
s901, after a photosensitive material film layer is formed on one side, away from the substrate, of the oxide layer, standing for a preset time, and hydrolyzing and combining silane parts of the photosensitive material with hydroxyl groups of the oxide layer;
and S902, removing residues which are not bonded on the oxide layer by adopting solvent cleaning.
Specifically, as shown in fig. 11B, fig. 11B is a schematic view after the photosensitive material is hydrolyzed and then bonded to the hydroxyl group of the oxide layer 2.
Alternatively, in a specific implementation, in the above patterning method provided by the embodiment of the present invention, as shown in fig. 11B, after the photosensitive material is spin-coated on the oxide layer 2 to form the photosensitive material coating film 41, the silane is partially hydrolyzed to be combined with the hydroxyl group of the oxide layer 2, as shown in fig. 10, specifically, the method may include:
s1001, baking the substrate with the photosensitive material film layer, wherein silane of the photosensitive material is hydrolyzed and combined with hydroxyl of the oxide layer;
specifically, the substrate on which the photosensitive material film layer is formed may be baked (i.e., heated to accelerate partial hydrolysis of silane) at a temperature ranging from 40 ℃ to 80 ℃.
And S1002, removing residues which are not combined on the oxide layer by adopting solvent cleaning.
Specifically, as shown in fig. 11B, fig. 11B is a schematic view after the photosensitive material is hydrolyzed and then bonded to the hydroxyl group of the oxide layer 2.
In specific implementation, as shown in fig. 11C, a first remaining region of the film 41 is irradiated with light with a predetermined wavelength (indicated by an arrow in the figure), where the first remaining region corresponds to a region where a first quantum dot layer is to be formed; in a specific implementation, in the patterning method provided in the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm to 400nm for 5s to 30s, and when the film 41 is irradiated, the film 41 may be shielded by a mask 42, where the mask 42 includes a light-transmitting region 421 and a light-shielding region 422, and the light-transmitting region 421 corresponds to a first remaining region of the film 41, which is irradiated by the light.
As shown in fig. 11D, fig. 11D shows that after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photosensitive portion of the first remaining region is photolyzed to generate carboxyl groups, i.e., the circle (photosensitive portion) of the first remaining region in fig. 11D is decomposed.
In practical implementation, in the patterning method disclosed in the embodiment of the present invention, the forming the quantum dot layer specifically includes:
and forming a quantum dot layer by adopting a spin coating mode.
Specifically, as shown in fig. 11E, a first quantum dot layer 31 is formed on the substrate 1 irradiated with light by spin coating; as shown in fig. 11F, the first quantum dot layer 31 is bonded to the carboxyl groups generated in the first remaining region of the film layer 41, and thus the coordination group in the position irradiated with light, i.e., in the first remaining region, is tightly bonded to the first quantum dot layer 31; then, the first quantum dots not bonded to the carboxyl groups in the first quantum dot layer 31 are removed, and patterning of the first quantum dot layer is completed, and since the first quantum dots at the corresponding positions of the film layer 41 not irradiated by the light with the preset wavelength are not bonded to the carboxyl groups, the first quantum dots not bonded to the coordinating groups in the first quantum dot layer 31 can be easily removed by the solvent.
It should be noted that when the solvent is used to remove the first quantum dots which are not bonded to the coordinating group, other residues on the substrate 1, such as o-nitrobenzaldehyde generated by photolysis, can be removed at the same time.
Then, as shown in fig. 11G, a second reserved region of the film 41 is irradiated with light with a predetermined wavelength (indicated by an arrow in the figure), where the second reserved region corresponds to a region where a second quantum dot layer is to be formed; in specific implementation, in the patterning method provided in the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm to 400nm for 5s to 30s, when the film 41 is irradiated, the film 41 may be shielded by a mask 42, the mask 42 includes a light-transmitting region 421 and a light-shielding region 422, and the light-transmitting region 421 corresponds to a second remaining region of the film 41, which is irradiated by the light.
As shown in fig. 11H, fig. 11H shows that after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photosensitive portion of the second remaining region irradiated with the light is photolyzed to generate carboxyl groups, i.e., the circles (photosensitive portions) of the second remaining region in fig. 11H are decomposed.
Next, as shown in fig. 11I, a second quantum dot layer 32 is formed on the substrate 1 irradiated with light by spin coating, and the second quantum dot layer 32 is bonded to the carboxyl group generated in the second retention region of the film 41, so that the coordination group in the second retention region, which is the position irradiated with light, is tightly bonded to the second quantum dot layer 32; then, the film layer 41 not irradiated by the light with the preset wavelength is removed, that is, the second quantum dots not bonded to the carboxyl groups in the second quantum dot layer 32 are removed, and patterning of the second quantum dot layer is completed, and since the second quantum dots at the corresponding positions of the film layer 41 not irradiated by the light with the preset wavelength are not bonded to the carboxyl groups, the second quantum dots not bonded to the ligand groups in the second quantum dot layer 32 can be easily removed by the solvent.
Then, as shown in fig. 11J, a third reserved region of the film 41 is irradiated with light with a preset wavelength (indicated by an arrow in the figure), where the third reserved region corresponds to a region where a third quantum dot layer needs to be formed subsequently; in specific implementation, in the patterning method provided in the embodiment of the present invention, the film 41 may be irradiated with ultraviolet light of 300nm to 400nm for 5s to 30s, when the film 41 is irradiated, the film 41 may be shielded by a mask 42, the mask 42 includes a light-transmitting region 421 and a light-shielding region 422, and the light-transmitting region 421 corresponds to a third remaining region of the film 41, which is irradiated with the light.
As shown in fig. 11K, after the film 41 is irradiated with ultraviolet light of 300nm to 400nm, the photosensitive portion of the third remaining region irradiated with the light is photolyzed to generate carboxyl groups, i.e., the circles (photosensitive portions) of the second remaining region in fig. 11K are decomposed.
Next, as shown in fig. 11L, a third quantum dot layer 33 is formed on the substrate 1 irradiated with light by spin coating, and the third quantum dot layer 33 is bonded to the carboxyl group generated in the third remaining region of the film 41, so that the coordination group in the position irradiated with light, i.e., the third remaining region is tightly bonded to the third quantum dot layer 33; then, the film layer 41 not irradiated by the light of the preset wavelength is removed, that is, the third quantum dots not bonded to the carboxyl groups in the third quantum dot layer 33 are removed, and patterning of the third quantum dot layer is completed, and since the third quantum dots at the corresponding positions of the film layer 41 not irradiated by the light of the preset wavelength are not bonded to the carboxyl groups, the third quantum dots not bonded to the ligand groups in the third quantum dot layer 33 can be easily removed by the solvent.
In practical implementation, the color of light emitted by the first quantum dot layer, the color of light emitted by the second quantum dot layer, and the color of light emitted by the third quantum dot layer in the embodiment of the present invention are red, green, and blue, respectively, so that the embodiment of the present invention completes the patterning process of the full-color quantum dot by the above patterning method. The quantum dot layer can be patterned without adopting ink-jet printing or a photoetching method, and the quantum dots with high resolution and good performance can be formed.
In practice, the photosensitive material is structured as the following in the patterning method provided by the embodiment of the present invention
Wherein, R1, R2 and R3 are methoxy, ethoxy, tert-butyl, chlorine atom or acetate respectively, and R4 is alkyl or aryl.
Specifically, the hydrolysis principle and the decomposition principle of the photosensitive material under light irradiation refer to the relevant description of the photosensitive material in the quantum dot light emitting device, and are not described herein again.
The following briefly describes a method for manufacturing a quantum dot light emitting device according to an embodiment of the present invention with reference to fig. 3.
As shown in fig. 3, an anode 6 is fabricated on a substrate 1 by a patterning process, and the fabrication of the anode 6 is the same as that of the prior art and will not be described in detail herein; next, a hole injection layer 7 is formed on the anode 6; next, a hole transport layer 5 is formed on the sub-hole injection layer 7; the manufacturing method of the hole injection layer 7 and the hole transport layer 5 is the same as that of the prior art, and detailed description is omitted; next, a connection layer 4 and a quantum dot layer 3 including a first quantum dot layer, a second quantum dot layer, and a third quantum dot layer are formed on the hole transport layer 5 by the quantum dot layer patterning method; then, an electron transport layer 8, an electron injection layer 9, and a cathode 10 are sequentially formed on the quantum dot layer 3; the electron transport layer 8, the electron injection layer 9 and the cathode 10 are fabricated in the same manner as in the prior art and will not be described in detail.
Based on the same inventive concept, the embodiment of the invention also provides a display device, which comprises the quantum dot light-emitting device provided by the embodiment of the invention.
In a specific implementation, the display device provided in the embodiment of the present invention may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. Other essential components of the display device are understood by those skilled in the art, and are not described herein or should not be construed as limiting the invention. The implementation of the display device can be referred to the above embodiments of the quantum dot light emitting device, and repeated details are omitted.
In practice, the display device provided by the embodiment of the present invention may further include other functional film layers known to those skilled in the art, which are not described in detail herein.
According to the quantum dot light-emitting device, the quantum dot layer patterning method and the display device, the connecting layer is arranged between the oxide layer and the quantum dot layer and is formed by hydrolyzing the photosensitive material and irradiating the connecting layer with light with a preset wavelength, so that before the quantum dot layer is formed, firstly, a photosensitive material film layer is formed on the substrate with the oxide layer, and as the photosensitive material has a silane part which is hydrolyzed to generate silanol and the oxide layer generally has hydroxyl, the silanol generated by hydrolyzing the photosensitive material can be combined with the hydroxyl of the oxide layer, so that the photosensitive material is modified on the substrate; the photosensitive material is provided with a photosensitive part which generates the coordination group after being irradiated by light with a preset wavelength, so that the reserved area corresponding to the film layer of the photosensitive material is irradiated by the light with the preset wavelength, and the photosensitive part generates photolysis reaction to generate the coordination group; then forming a quantum dot layer, wherein the coordination group generated in the reserved region is combined with the quantum dot layer, so that the quantum dot at the position of the reserved region is tightly combined with the photosensitive material; the photosensitive material in the reserved area is combined with the quantum dot layer, and the photosensitive material in the area, which is not irradiated by the preset wavelength, of the film layer is not combined with the quantum dot layer; finally, removing the quantum dots which are not combined with the photosensitive material in the quantum dot layer to complete the patterning of the quantum dot layer; compared with the prior art, the method can complete the patterning of the quantum dot layer without adopting an ink-jet printing method or a photoetching method, and can form the quantum dots with high resolution and good performance.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (15)
1. A quantum dot light emitting device, comprising: the quantum dot structure comprises a substrate, an oxide layer positioned on the substrate, a quantum dot layer positioned on one side of the oxide layer, which faces away from the substrate, and a connecting layer positioned between the oxide layer and the quantum dot layer; the silanol of the connecting layer is combined with the hydroxyl of the oxide layer, and the coordination group of the connecting layer is combined with the quantum dot layer; wherein the content of the first and second substances,
the connecting layer is formed by hydrolyzing the photosensitive material and irradiating the photosensitive material with light with a preset wavelength; wherein the photosensitive material has: hydrolyzing to generate a silane part of the silanol, generating a photosensitive part of the coordinating group after the irradiation of the light with the preset wavelength, and connecting the silane part and the photosensitive part.
2. The quantum dot light emitting device of claim 1, wherein the photoactive material is
Wherein, R1, R2 and R3 are respectively selected from one or more of methoxyl, ethoxyl, tertiary butyl, chlorine atom or acetate, R1, R2 and R3 are the same or different, and R4 is alkyl or aryl.
3. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is a face-up structure, the oxide layer is a hole transport layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises an anode positioned between the substrate and the hole transport layer, a hole injection layer positioned between the anode and the hole transport layer, an electron transport layer positioned on one side, away from the substrate, of the quantum dot layer, an electron injection layer positioned on one side, away from the substrate, of the electron transport layer, and a cathode positioned on one side, away from the substrate, of the electron injection layer.
4. The quantum dot light emitting device of claim 1, wherein the quantum dot light emitting device is a positive structure, the oxide layer is an electron blocking layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises an anode, a hole injection layer, a hole transport layer, a hole barrier layer, an electron transport layer, an electron injection layer and a cathode, wherein the anode is positioned between the substrate and the electron barrier layer, the hole injection layer is positioned between the anode and the electron barrier layer, the hole transport layer is positioned between the hole injection layer and the electron barrier layer, the hole barrier layer is positioned on one side, away from the substrate, of the quantum dot layer, the electron transport layer is positioned on one side, away from the substrate, of the hole barrier layer, the electron transport layer is positioned on one side, away from the substrate, of the electron transport.
5. The quantum dot light-emitting device according to claim 1, wherein the quantum dot light-emitting device is an inverted structure, and the oxide layer is an electron transport layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises a cathode positioned between the substrate and the electron transport layer, an electron injection layer positioned between the cathode and the electron transport layer, a hole transport layer positioned on one side, away from the substrate, of the quantum dot layer, a hole injection layer positioned on one side, away from the substrate, of the hole transport layer, and an anode positioned on one side, away from the substrate, of the hole injection layer.
6. The quantum dot light-emitting device according to claim 1, wherein the quantum dot light-emitting device is an inverted structure, and the oxide layer is a hole blocking layer;
the quantum dot light emitting device further includes: the quantum dot structure comprises a cathode, an electron injection layer, an electron transport layer, an electron blocking layer, a hole transport layer, a hole injection layer and an anode, wherein the cathode is positioned between a substrate and a hole blocking layer, the electron injection layer is positioned between the cathode and the hole blocking layer, the electron transport layer is positioned between the electron injection layer and the hole blocking layer, the electron blocking layer is positioned on one side, away from the substrate, of a quantum dot layer, the hole transport layer is positioned on one side, away from the substrate, of the electron blocking layer, the hole injection layer is positioned on one side, away from the substrate, of the hole transport.
7. A display device comprising a QD light emitting device according to any of claims 1 to 6.
8. A method of patterning a quantum dot layer, comprising:
forming a photosensitive material film layer on the substrate on which the oxide layer is formed; wherein the photosensitive material has: hydrolyzing to generate a silane part in which silanol is combined with a hydroxyl group of the oxide layer, generating a photosensitive part of a coordinating group after irradiation of light with a preset wavelength, and a connecting part connecting the silane part and the photosensitive part;
after the silane part is hydrolyzed to generate the silanol and the hydroxyl of the oxide layer are combined, irradiating the reserved area of the photosensitive material film layer by adopting the light with the preset wavelength, and generating the coordination group by the photolysis reaction of the photosensitive part of the reserved area;
forming a quantum dot layer, the coordinating group generated in the retention region being bonded to the quantum dot layer;
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer to form a patterned quantum dot layer in the reserved area.
9. The patterning method according to claim 8, wherein forming a film layer of a photosensitive material on the substrate on which the oxide layer is formed comprises:
forming an oxide layer on the substrate;
and spin-coating a photosensitive material on the oxide layer to form the photosensitive material film layer.
10. The patterning method according to claim 8, wherein the irradiating the reserved area of the photosensitive material film layer with the light of the predetermined wavelength specifically includes:
and shielding the photosensitive material film layer by adopting a mask plate, wherein the mask plate comprises a light transmission area and a light shading area, and the light transmission area corresponds to a reserved area which is irradiated by light in the photosensitive material film layer.
11. The patterning method according to claim 8, wherein the forming of the quantum dot layer specifically comprises:
and forming the quantum dot layer by adopting a spin coating mode.
12. The patterning method according to claim 8, wherein the removing of the quantum dots not bonded to the coordinating group in the quantum dot layer specifically comprises:
and removing the quantum dots which are not combined with the coordination groups in the quantum dot layer by using a solvent.
13. The patterning process of claim 8, wherein said silane moieties are hydrolyzed in combination with hydroxyl groups of said oxide layer, in particular comprising:
after the photosensitive material film layer is formed on the side, away from the substrate, of the oxide layer, standing for a preset time, and hydrolyzing and combining silane parts of the photosensitive material with hydroxyl groups of the oxide layer;
and removing residues which are not bonded on the oxide layer by cleaning with a solvent.
14. The patterning process of claim 8, wherein said silane moieties are hydrolyzed in combination with hydroxyl groups of said oxide layer, in particular comprising:
baking the substrate on which the photosensitive material film layer is formed, wherein silane parts of the photosensitive material are hydrolyzed and combined with hydroxyl groups of the oxide layer;
and removing residues which are not bonded on the oxide layer by cleaning with a solvent.
15. The patterning process of claim 8, wherein said photosensitive material is
Wherein, R1, R2 and R3 are methoxy, ethoxy, tert-butyl, chlorine atom or acetate respectively, and R4 is alkyl or aryl.
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| CN112599692A (en) * | 2021-01-06 | 2021-04-02 | 福州大学 | Nano-scale pixelized quantum dot light-emitting device based on photoetching process and preparation method thereof |
| WO2022160142A1 (en) * | 2021-01-27 | 2022-08-04 | 京东方科技集团股份有限公司 | Quantum dot light-emitting device and manufacturing method therefor |
| WO2022255979A1 (en) * | 2021-06-04 | 2022-12-08 | Ihsan Dogramaci Bilkent Universitesi | A method for selective patterning of quantum dots in the production of optical devices |
| CN113903874A (en) * | 2021-09-22 | 2022-01-07 | 北京京东方技术开发有限公司 | Method for manufacturing QLED device, QLED device and display device |
| CN113903874B (en) * | 2021-09-22 | 2024-04-26 | 北京京东方技术开发有限公司 | Method for preparing QLED device, QLED device and display device |
| CN116323861A (en) * | 2021-10-20 | 2023-06-23 | 京东方科技集团股份有限公司 | Quantum dot material, patterning method of quantum dot film layer and quantum dot display device |
| WO2023122999A1 (en) * | 2021-12-28 | 2023-07-06 | 京东方科技集团股份有限公司 | Light-emitting device and preparation method thereof, display panel and display device |
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