CN111769161A - Nitrogen-doped amorphous oxide thin film transistor and preparation method thereof - Google Patents
Nitrogen-doped amorphous oxide thin film transistor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
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- 239000013077 target material Substances 0.000 claims description 21
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 claims description 21
- 229910052786 argon Inorganic materials 0.000 claims description 15
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000002834 transmittance Methods 0.000 abstract description 9
- 230000005669 field effect Effects 0.000 abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
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- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 5
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
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- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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Abstract
The invention belongs to the technical field of transistor preparation, and particularly relates to a nitrogen-doped amorphous oxide thin film transistor and a preparation method thereof. The nitrogen-doped ITZO active layer in the nitrogen-doped amorphous oxide thin film transistor provided by the invention is of an amorphous structure, and the transmittance is about 90% in a visible light range; the thin film transistor with the nitrogen doped ITZO as the active layer has high field effect (the field effect mobility is as high as 27.97 cm)2V · s) and low interface state density and strong stability, and can realize the preparation of the high-performance nitrogen-doped ITZO thin film transistor at room temperature.
Description
Technical Field
The invention relates to the technical field of transistor preparation, in particular to a nitrogen-doped amorphous oxide thin film transistor and a preparation method thereof.
Background
Thin Film Transistors (TFTs) are the core elements of flat panel display technology, and their performance has a direct impact on the response speed, brightness, contrast and power consumption of the display panel. The thin film transistor mainly comprises a grid electrode, a grid electrode insulating layer, an active layer, a source electrode and a drain electrode.
The active layer is the most important factor influencing the performance of the thin film transistor, and the selection of the material of the active layer is particularly important in the preparation of the thin film transistor. Amorphous Indium Tin Zinc Oxide (ITZO) is an oxide semiconductor, and the material has a forbidden band width of more than 3.2eV and a transmittance of more than 85% in the visible light range. In addition, In the ITZO material3+And Sn4+The 5s orbit is spherically symmetrical, which is beneficial to the migration of electrons; meanwhile, oxygen vacancy and Sn in the ITZO thin filmInThe formation of the point defect is beneficial to improving the carrier concentration of the film. However, oxygen molecules in the air environment are prone to be adsorbed and desorbed at the back channel, and capture or release electrons, so that the electrical performance of the thin film transistor is unstable, which is a major problem in the practical application process of the oxide thin film transistor.
Therefore, the development of an amorphous oxide thin film transistor with excellent electrical properties and strong stability is of great significance to the display technology using the oxide thin film transistor as a pixel switch.
Disclosure of Invention
The invention aims to provide a nitrogen-doped amorphous oxide thin film transistor and a preparation method thereof, which can improve the electrical property and stability of the amorphous oxide thin film transistor.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a nitrogen-doped amorphous oxide thin film transistor which comprises a substrate, an active layer, a source electrode and a drain electrode, wherein the active layer is made of nitrogen-doped amorphous indium tin zinc oxide.
Preferably, the thickness of the active layer is 15-60 nm.
Preferably, the thickness of the source electrode is 100-200 nm.
Preferably, the thickness of the drain electrode is 100-200 nm.
The invention provides a preparation method of a nitrogen-doped amorphous oxide thin film transistor in the technical scheme, which comprises the following steps:
preparing an active layer on a substrate by adopting a magnetron sputtering method by taking amorphous indium tin zinc oxide as a target material in the presence of argon, oxygen and nitrogen to obtain a substrate-active layer;
and preparing a source electrode and a drain electrode on the substrate-active layer to obtain the nitrogen-doped amorphous oxide thin film transistor.
Preferably, the flow rate of the argon is 50mL/min, the flow rate of the oxygen is 10mL/min, and the flow rate of the nitrogen is 2-8 mL/min.
Preferably, the sputtering pressure of the magnetron sputtering method is 0.1-0.5 Pa, and the power is 50-100W.
Preferably, the amorphous indium tin zinc oxide is used as a target material for pre-sputtering before the active layer is prepared on the substrate.
Preferably, the amorphous indium tin zinc oxide target material is formed by In2O3、SnO2And ZnO, wherein the atomic number ratio of In, Sn and Zn In the amorphous indium tin zinc oxide target material is 30:35: 35.
Preferably, the pressure of the pre-sputtering is 0.4-1 Pa, the power is 50-100W, and the time is 8-12 min.
The nitrogen-doped amorphous oxide thin film transistor comprises a substrate, an active layer, a source electrode and a drain electrode, wherein the active layer is made of nitrogen-doped amorphous indium tin zinc oxide (nitrogen-doped ITZO), and because the ionic radius of nitrogen is close to that of oxygen, the existence of nitrogen can passivate oxygen vacancy defects inside the active layer of the amorphous indium tin zinc oxide; the absorption/desorption reaction of the nitrided amorphous indium tin zinc oxide thin film transistor on oxygen in the air is reduced, the interface state density is reduced, and the carrier mobility and the stability of the device are improved;
the nitrogen-doped ITZO thin film in the nitrogen-doped amorphous oxide thin film transistor provided by the invention is of an amorphous structure, the formed film is uniform and compact, and the transmittance in a visible light range exceeds 90%; the highest field effect mobility of the nitrogen-doped ITZO thin film transistor obtained by taking the thin film as an active layer is 27.97cm2V.s, current switching ratio of about 107The subthreshold swing is 0.46V/dec, and the interface state density is 5.24 × 1011cm-2The electrical properties are excellent; 1000s grid positive bias stress measurementTest results show that the minimum threshold voltage drift amount of the nitrogen-doped ITZO thin film transistor prepared by the invention is only 0.7V, the device stability is strong, and the requirements of planar display application are met;
according to the invention, nitrogen is introduced in the process of preparing the active layer of the ITZO thin film transistor, and the interface state density of the thin film transistor is reduced by adopting a nitrogen passivation oxygen vacancy process, so that the electrical property and stability of the thin film transistor are improved, and the nitrogen doping process has the advantages of simple operation, low cost, good repeatability and suitability for industrial production;
according to the invention, the nitrogen-doped ITZO active layer is prepared by adopting a radio frequency magnetron sputtering process, and the prepared amorphous nitrogen-doped ITZO thin film has a smooth surface, so that good ohmic contact between the active layer and a source drain electrode is favorably formed, and the electrical property of the thin film transistor is improved; and the preparation of the nitrogen-doped ITZO thin film transistor can be realized at normal temperature, so that the obtained transistor is transparent to visible light, and a foundation is laid for manufacturing a flexible and fully transparent display screen.
Drawings
FIG. 1 is a schematic structural diagram of a nitrogen-doped ITZO thin film transistor provided by the present invention, wherein 1-gate electrode, 2-gate insulating layer, 3-active layer, 4-source electrode, and 5-drain electrode;
FIG. 2 is a graph showing the results of X-ray diffraction measurements of the nitrogen-doped ITZO active layer in example 1;
fig. 3 is a graph showing the uv-vis transmittance test result of the nitrogen-doped ITZO active layer in example 1;
FIG. 4 is a transfer characteristic curve of the nitrogen-doped ITZO thin film transistor in example 1;
fig. 5 is a graph showing the gate positive bias stress test results of the nitrogen-doped ITZO thin film transistor in example 1.
Detailed Description
The invention provides a nitrogen-doped amorphous oxide thin film transistor which comprises a substrate, an active layer, a source electrode and a drain electrode, wherein the active layer is nitrogen-doped amorphous indium tin zinc oxide.
In the invention, the thickness of the active layer is preferably 15-60 nm, and more preferably 20-40 nm; the thicknesses of the source electrode and the drain electrode are independently preferably 100-200 nm, and more preferably 120-160 nm.
Fig. 1 is a schematic structural diagram of the ITZO thin film transistor doped with nitrogen according to the present invention, wherein 1 is a gate electrode, 2 is a gate insulating layer, 3 is an active layer, 4 is a source electrode, and 5 is a drain electrode. Specifically, a substrate is formed by a grid electrode and a grid electrode insulating layer, the grid electrode is a bottom layer, and the grid electrode insulating layer is positioned on the upper surface of the grid electrode; the active layer is positioned in the middle of the upper side of the gate insulation layer; the source electrode and the drain electrode respectively cover the left side and the right side of the upper side face of the active layer and the upper side of the gate insulating layer, isolation gaps are arranged on the opposite faces of the source electrode and the drain electrode, the width of each isolation gap is preferably 1500 micrometers, and the length of each isolation gap is preferably 150 micrometers.
The invention provides a preparation method of a nitrogen-doped amorphous oxide thin film transistor in the technical scheme, which comprises the following steps:
preparing an active layer on a substrate by adopting a magnetron sputtering method by taking amorphous indium tin zinc oxide as a target material in the presence of argon, oxygen and nitrogen to obtain a substrate-active layer;
and preparing a source electrode and a drain electrode on the substrate-active layer to obtain the nitrogen-doped amorphous oxide thin film transistor.
The method comprises the steps of taking amorphous indium tin zinc oxide as a target material and preparing an active layer on a substrate by a magnetron sputtering method in the presence of oxygen and nitrogen to obtain a substrate-active layer, wherein before the active layer is prepared on the substrate, the method preferably uses the amorphous Indium Tin Zinc Oxide (ITZO) as the target material to carry out pre-sputtering, the pressure of the pre-sputtering is preferably 0.4-1 Pa, more preferably 0.6-0.8 Pa, the power of the pre-sputtering is preferably 50-100W, more preferably 60-80W, the time of the pre-sputtering is preferably 8-12 min, more preferably 10min, the method preferably carries out the pre-sputtering in an argon atmosphere, the flow of the argon is preferably 50mL/min, the method preferably places the substrate on a sample frame of a radio frequency magnetron sputtering chamber, installs the ITZO target material on a corresponding target position of the radio frequency magnetron sputtering chamber, introduces the argon into the radio frequency magnetron sputtering chamber, turns a baffle between the target material and the substrate to carry out the pre-sputtering, and the vacuum degree of the radio frequency magnetron sputtering chamber is preferably 1 × 10 background-4Pa. The invention removes the amorphous indium tin zinc oxide by pre-sputteringThe oxide layer on the surface of the target material is removed, so that the quality of the nitrogen-doped ITZO film is improved.
In the present invention, the amorphous indium tin zinc oxide target material is preferably formed of In2O3、SnO2And ZnO, wherein the atomic number ratio of In, Sn and Zn In the amorphous indium tin zinc oxide target material is preferably 30:35: 35. The sintering method is not particularly limited, and the sintering method may be selected from methods known to those skilled in the art.
In the invention, the substrate is preferably a thermal oxidation silicon wafer, the bottom layer of the thermal oxidation silicon wafer is a grid electrode, and the upper layer of the thermal oxidation silicon wafer is a grid electrode insulating layer. In the present invention, the thermally oxidized silicon wafer is preferably a commercially available product, and specifically, SiO is preferable2/p-Si<100>The thermal oxidation silicon wafer is a single-side polished single-side oxidized silicon wafer, wherein the thickness of the Si layer is 500nm, and SiO is2The thickness of the layer was 100 nm. Before the pre-sputtering is carried out on the substrate, the thermal oxidation silicon wafer is preferably subjected to ultrasonic cleaning by using deionized water, absolute ethyl alcohol and acetone sequentially, the power of the ultrasonic cleaning is preferably 80W, and the cleaning time is preferably 10 min. After the ultrasonic cleaning is completed, the obtained thermal oxide silicon wafer is preferably dried by using nitrogen gas in the present invention.
In the invention, the argon flow is 50mL/min, the oxygen flow is preferably 10mL/min, and the nitrogen flow is preferably 2-8 mL/min, and more preferably 3-6 mL/min. According to the invention, after argon, oxygen and nitrogen are preferably introduced into a radio frequency magnetron sputtering chamber, the pressure of the chamber is adjusted to 0.1-0.5 Pa, the sputtering power is set to 50-100W, a baffle plate is turned off, and a magnetron sputtering method is adopted to carry out SiO deposition on a substrate2And sputtering the gate insulating layer to obtain the nitrogen-doped ITZO active layer. According to the invention, preferably, after the pre-sputtering is finished, the argon inlet valve is not closed, the argon flow of 50mL/min in the sputtering chamber is kept, oxygen and nitrogen are simultaneously introduced, and the argon, the oxygen and the nitrogen are continuously introduced in the whole sputtering process until the active layer sputtering is finished. The number of oxygen vacancies in the active layer is controlled by oxygen, and the oxygen vacancies are the main factor for determining the number of electrons in the active layer; the nitrogen-doped ITZO is prepared by nitrogen, and the nitrogen doping can be passivatedITZO active layer and SiO2The defect state density at the interface is improved, thereby improving the stability of the transistor film. In the invention, a part of oxygen element in the nitrogen-doped ITZO active layer is doped, and the other part of oxygen element is from an oxide target.
The invention has no special requirements on the device used for magnetron sputtering, and the radio frequency magnetron sputtering device well known by the technical personnel in the field can be selected. In an embodiment of the invention, the specific apparatus is configured to: the power supply unit comprises a radio frequency power supply and a matcher thereof, and is connected with the target holder through a power line at the back of the target holder to independently control the ITZO target; four target seats are uniformly distributed in the radio frequency magnetic control cavity, the sample racks are positioned right above the target seats, the four sample racks correspond to the target seats one by one, a baffle is arranged between each target seat and each sample rack, and the opening and closing of the baffles are realized through a motor; the substrate is fixed in the center of the sample frame by screws and pressing sheets, and the distance between the target bases is adjusted to be about 40-60 mm, so that the substrate is positioned in a sputtering negative glow area; the air inlet unit comprises four air cylinders and air pipes connected with the air cylinders respectively, and the air pipes enter the cavity.
After the substrate-active layer is obtained, a source electrode and a drain electrode are prepared on the substrate-active layer, and the nitrogen-doped amorphous oxide thin film transistor is obtained. The method for preparing the source electrode and the drain electrode is not particularly limited, and the source electrode and the drain electrode can be prepared by a method well known by the technical personnel in the field, specifically can be prepared by a magnetron sputtering method, a thermal evaporation method or a chemical vapor deposition method, and are formed by a mask method or a photoetching method. In the present invention, the source electrode and the drain electrode are preferably made of the same material, and may be made of a metal material such as gold, platinum, aluminum, or nickel, or a metal oxide material such as indium tin oxide or indium tin zinc oxide.
The nitrogen-doped amorphous oxide thin film transistor and the method for manufacturing the same according to the present invention will be described in detail with reference to the following examples, which should not be construed as limiting the scope of the present invention.
Example 1
In with the atomic number ratio of indium, tin and zinc being 30:35:352O3、SnO2And ZnO sintering to obtainAn ITZO target material;
with SiO2/p-Si<100>The thermal oxidation silicon wafer is taken as a substrate, (wherein, the bottom layer is p-Si)<100>Is a gate with a thickness of 500nm and an upper SiO layer2A gate insulating layer with a thickness of 100 nm); respectively carrying out ultrasonic cleaning on the substrate by using deionized water, absolute ethyl alcohol and acetone, wherein the ultrasonic power is 80W, the cleaning time is 10min each time, and after the cleaning is finished, drying the substrate by using nitrogen;
placing the substrate on a sample rack of a radio frequency magnetron sputtering chamber, installing the ITZO target material on a corresponding target position of the radio frequency magnetron sputtering chamber, and vacuumizing to 1 × 10 of background-4Introducing 50mL/min argon into a radio frequency magnetron sputtering chamber of Pa, adjusting the pressure of the chamber to be 0.4Pa, setting the sputtering power to be 60W, rotating a baffle plate between the target material and the substrate, and carrying out pre-sputtering for 10 min;
introducing oxygen (10mL/min) and nitrogen (6mL/min) into the radio frequency magnetron sputtering chamber at the same time, adjusting the pressure of the chamber to be 0.4Pa, setting the sputtering power to be 60W, turning off the baffle, and sputtering on SiO2Sputtering is carried out on the gate insulating layer to obtain a nitrogen-doped ITZO active layer; the thickness of the prepared nitrogen-doped ITZO active layer is 25nm, and the nitrogen-doped ITZO active layer is formed by a mask method.
Indium zinc oxide with the thickness of 100nm is prepared by a radio frequency magnetic control method, and a source electrode and a drain electrode are obtained by forming through a mask method, wherein the width of a gap between the opposite surfaces of the source electrode and the drain electrode is 1500 mu m, and the length of the gap is 150 mu m.
At normal temperature, the prepared nitrogen-doped ITZO active layer and the thin film transistor are subjected to performance test in air. Fig. 2 is a graph of the X-ray diffraction test result of the nitrogen-doped ITZO active layer, no obvious diffraction peak is found in the spectrogram, and only one amorphous diffusion peak exists at 2 θ:30 ° to 40 °, which shows that the nitrogen-doped ITZO active layer is of an amorphous structure, and the amorphous structure can reduce grain boundary scattering received in a carrier transport process, so that high carrier mobility of the thin film transistor is ensured.
Fig. 3 is a graph showing the result of the uv-vis transmittance test of the nitrogen-doped ITZO active layer. Test results show that the nitrogen-doped ITZO active layer is of an amorphous structure, and the transmittance of the nitrogen-doped ITZO active layer in a visible light range is 93.42%. FIG. 4 is a nitrogen-doped ITZO film of example 1FIG. 5 is a graph showing the gate bias stress test results of the nitrogen-doped ITZO thin film transistor of example 1, and it can be seen that the field effect mobility of the nitrogen-doped ITZO thin film transistor prepared by the present invention is as high as 27.97cm2V.s, current switching ratio of about 107The subthreshold swing is 0.46V/dec, and the interface state density is 5.24 × 1011cm-2The electrical properties are excellent; the 1000s grid positive bias stress test result shows that the minimum threshold voltage drift amount of the nitrogen-doped ITZO thin film transistor is only 0.7V, and the stability of the device is strong.
Example 2
In with the atomic number ratio of indium, tin and zinc being 30:35:352O3、SnO2Sintering the mixture and ZnO to prepare an ITZO target material;
with SiO2/p-Si<100>The thermal oxidation silicon wafer is taken as a substrate, (wherein, the bottom layer is p-Si)<100>Is a gate with a thickness of 500nm and an upper SiO layer2A gate insulating layer with a thickness of 100 nm); respectively carrying out ultrasonic cleaning on the substrate by using deionized water, absolute ethyl alcohol and acetone, wherein the ultrasonic power is 80W, the cleaning time is 10min each time, and after the cleaning is finished, drying the substrate by using nitrogen;
placing the substrate on a sample rack of a radio frequency magnetron sputtering chamber, installing the ITZO target material on a corresponding target position of the radio frequency magnetron sputtering chamber, and vacuumizing to 1 × 10 of background-4Introducing 50mL/min argon into a radio frequency magnetron sputtering chamber of Pa, adjusting the pressure of the chamber to be 0.4Pa, setting the sputtering power to be 70W, rotating a baffle plate between the target material and the substrate, and carrying out pre-sputtering for 10 min;
introducing oxygen (10mL/min) and nitrogen (6mL/min) into the radio frequency magnetron sputtering chamber at the same time, adjusting the pressure of the chamber to be 0.4Pa, setting the sputtering power to be 70W, turning off the baffle, and sputtering on SiO2Sputtering is carried out on the gate insulating layer to obtain a nitrogen-doped ITZO active layer; the thickness of the nitrogen-doped ITZO active layer prepared by the mask method is 35 nm;
indium zinc oxide with the thickness of 100nm is prepared by a radio frequency magnetic control method, and a source electrode and a drain electrode are obtained by forming through a mask method, wherein the width of a gap between the opposite surfaces of the source electrode and the drain electrode is 1500 mu m, and the length of the gap is 150 mu m.
At normal temperature, the prepared nitrogen-doped ITZO active layer and the thin film transistor are subjected to performance test in air. The results showed that the nitrogen-doped ITZO active layer prepared in example 2 had an amorphous structure and had a transmittance of 89.91% in the visible light range. The field effect mobility of the nitrogen-doped ITZO thin film transistor prepared in the example is 20.13cm2V.s, current on-off ratio of 106The subthreshold swing is 0.65V/dec, and the interface state density is 7.72 × 1011cm-2The electrical properties are excellent; the result of a 1000s grid positive bias stress test shows that the minimum threshold voltage drift amount of the nitrogen-doped ITZO thin film transistor is 0.9V, and the stability of the device is strong.
Comparative example
In with the atomic number ratio of indium, tin and zinc being 30:35:352O3、SnO2Sintering the mixture and ZnO to prepare an ITZO target material;
with SiO2/p-Si<100>The thermal oxidation silicon wafer is taken as a substrate, (wherein, the bottom layer is p-Si)<100>Is a gate with a thickness of 500nm and an upper SiO layer2A gate insulating layer with a thickness of 100 nm); respectively carrying out ultrasonic cleaning on the substrate by using deionized water, absolute ethyl alcohol and acetone, wherein the ultrasonic power is 80W, the cleaning time is 10min each time, and after the cleaning is finished, drying the substrate by using nitrogen;
placing the substrate on a sample rack of a radio frequency magnetron sputtering chamber, installing the ITZO target material on a corresponding target position of the radio frequency magnetron sputtering chamber, and vacuumizing to 3 × 10 of background-4Introducing 50mL/min argon and oxygen (10mL/min) into a radio frequency magnetron sputtering chamber of Pa, adjusting the pressure of the chamber to 0.6Pa, setting the sputtering power to 60W, and sputtering on SiO2Sputtering is carried out on the gate insulating layer to obtain an ITZO active layer; the thickness of the ITZO active layer prepared by the mask method is 35 nm;
indium zinc oxide with the thickness of 90nm is prepared by a radio frequency magnetic control method, and a source electrode and a drain electrode are obtained by forming through a mask method, wherein the width of a gap between the opposite surfaces of the source electrode and the drain electrode is 1500 mu m, and the length of the gap is 150 mu m.
At normal temperature, the prepared nitrogen-doped ITZO active layer and the thin film transistor are subjected to performance test in air. The results show that the method has the advantages of high yield,the prepared ITZO active layer is of an amorphous structure, and the transmittance of the ITZO active layer is 89.76% in a visible light range; the field effect mobility of the prepared ITZO thin film transistor is 8.06cm2V.s, current on-off ratio of 105The subthreshold swing is 1.15V/dec, and the interface state density is 1.43 × 1012cm-2(ii) a The 1000s grid positive bias stress test result shows that the minimum threshold voltage drift amount of the ITZO thin film transistor is 2.5V, and the stability of the device is poor.
From examples 1-2 and comparative examples, the invention provides a nitrogen-doped amorphous oxide thin film transistor, wherein the prepared nitrogen-doped ITZO active layer is of an amorphous structure and has a transmittance of about 90% in a visible light range; the thin film transistor with the nitrogen doped ITZO as the active layer has high field effect (the field effect mobility is as high as 27.97 cm)2V · s) and low interface state density and strong stability, and can realize the preparation of the high-performance nitrogen-doped ITZO thin film transistor at room temperature.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A nitrogen-doped amorphous oxide thin film transistor comprises a substrate, an active layer, a source electrode and a drain electrode, and is characterized in that the active layer is made of nitrogen-doped amorphous indium tin zinc oxide.
2. The nitrogen-doped amorphous oxide thin film transistor according to claim 1, wherein the thickness of the active layer is 15 to 60 nm.
3. The N-doped amorphous oxide thin film transistor according to claim 1, wherein the source electrode has a thickness of 100 to 200 nm.
4. The N-doped amorphous oxide thin film transistor according to claim 1, wherein the thickness of the drain electrode is 100 to 200 nm.
5. A method for manufacturing a nitrogen-doped amorphous oxide thin film transistor according to any one of claims 1 to 4, comprising the steps of:
preparing an active layer on a substrate by adopting a magnetron sputtering method by taking amorphous indium tin zinc oxide as a target material in the presence of argon, oxygen and nitrogen to obtain a substrate-active layer;
and preparing a source electrode and a drain electrode on the substrate-active layer to obtain the nitrogen-doped amorphous oxide thin film transistor.
6. The method according to claim 5, wherein the flow rate of argon is 50mL/min, the flow rate of oxygen is 10mL/min, and the flow rate of nitrogen is 2 to 8 mL/min.
7. The method according to claim 5, wherein the magnetron sputtering method has a sputtering pressure of 0.1 to 0.5Pa and a power of 50 to 100W.
8. The method according to claim 5, wherein the amorphous ITO is pre-sputtered as a target before the active layer is formed on the substrate.
9. The method according to claim 5 or 8, wherein the amorphous indium tin zinc oxide is formed of In2O3、SnO2And ZnO, wherein the atomic number ratio of In, Sn and Zn In the amorphous indium tin zinc oxide is 30:35: 35.
10. The preparation method according to claim 8, wherein the pressure of the pre-sputtering is 0.4-1 Pa, the power is 50-100W, and the time is 8-12 min.
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