CN111768693A

CN111768693A - Display panel

Info

Publication number: CN111768693A
Application number: CN202010590897.3A
Authority: CN
Inventors: 曾宪祥
Original assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Current assignee: Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date: 2020-06-24
Filing date: 2020-06-24
Publication date: 2020-10-13

Abstract

The present invention provides a display panel including: the device comprises a substrate, a first metal layer, a planarization layer, a first insulating layer, a second insulating layer and a second metal layer; by adding silicon oxynitride into the first insulating layer of the nonmetal area, the FPC pad area of the substrate can be in contact with the planarization layer, so that the adhesion force of the FPC nonmetal film layer is improved, and the problem that the FPC is peeled off after being bound due to poor adhesion of the nonmetal layer overlapped with the FPC pad area is solved.

Description

Display panel

Technical Field

The invention relates to the technical field of display, in particular to a display panel.

Background

DOT (Direct on-cell touch) is a main trend of the current mobile phone touch technology. The DOT technology adopts a metal grid scheme and is based on a mutual capacitance principle. The metal grid routing is positioned in the non-light emitting area and avoids the sub-pixels. The metal grid wires are provided with breakpoints at specific positions to form Tx/Rx touch patterns.

The DOT can directly manufacture an induction Sensor (Touch Sensor) on the surface of the packaging layer of the panel, and compared with an external Touch screen: (1) the structure is simple, the light and thin, the internal space of the mobile phone is saved, (2) the attaching process of the external touch screen is reduced, the manufacturing process is simple, and the manufacturing and material cost is reduced; (3) the transmittance is higher; (4) the metal grid replaces indium tin oxide to be used as a touch conductive material, so that the folding touch is possible due to enhanced folding resistance.

The lap adhesion between nonmetal layers in the flexible circuit board (FPC) pad area of the DOT panel is poor, so that the module is easy to peel off after being bound.

Disclosure of Invention

The invention aims to provide a display panel, which can solve the problem that a film layer in a binding region is peeled off after being bound.

In order to achieve the above object, the present invention provides a display panel including: a substrate having a PAD region and a display region; in the PAD area, the substrate is provided with: the first metal layer is arranged on the substrate and corresponds to the PAD area; a planarization layer disposed on the substrate and the first metal layer; a first insulating layer disposed on the planarization layer; a second insulating layer disposed on the first insulating layer; the second metal layer is arranged on the second insulating layer and the first metal layer; wherein the material of the first insulating layer comprises silicon oxynitride.

Further, the material of the planarization layer includes photosensitive polyimide.

Further, in the display area, the substrate is provided with: the driving layer is arranged on the substrate and comprises a plurality of thin film transistors; the display layer is arranged on the driving layer; the packaging layer is arranged on the display layer; the first insulating layer and the second insulating layer are also arranged on the packaging layer; and the third insulating layer is arranged on the second insulating layer. .

Further, in the display region, the third insulating layer includes a first electrode and a second electrode, and the first electrode and the second electrode are insulated from each other.

Further, the first electrode and the second electrode are formed in the second metal layer.

Furthermore, the second insulating layer further comprises a third metal layer, and the adjacent first electrodes are connected through the third metal layer.

Further, the content specific gravity of the silicon oxide and the silicon nitride is 1: 4-1: 2.

Further, the material of the first insulating layer further includes silicon oxide or silicon nitride.

Further, the formula of the silicon oxynitride includes: SiON3, SiO2N3, or SiO 3N.

Further, the silicon oxide includes SiO; the silicon nitride includes SiNx.

The invention has the beneficial effects that: the invention provides a display panel, which is characterized in that silicon oxynitride is added into a first insulating layer of a nonmetal area, and an FPC pad area of a substrate is in contact with a planarization layer, so that the adhesion of an FPC nonmetal film layer is improved, and the problem that FPC is easy to peel off after being bound due to poor adhesion of the nonmetal layer lapped on the FPC pad area is solved.

Drawings

The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.

Fig. 1 is a schematic structural diagram of a pad area of a display panel according to the present invention.

Fig. 2 is a schematic plan view of a display panel provided in the present invention.

Fig. 3 is a schematic structural diagram of a display area of a display panel according to the present invention.

A display panel 100; a PAD area 1011; a display area 1012;

a substrate 101; a first metal layer 102; a planarization layer 103;

a first insulating layer 104; a second insulating layer 105; a second metal layer 106;

a drive layer 107; a display layer 108; an encapsulation layer 109;

a plasma layer 110; a third metal layer 111; a first electrode 1051;

a second electrode 1052.

Detailed Description

The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.

In the description of the present invention, it should be noted that unless otherwise explicitly stated or limited, the terms "integrated," "connected," and "connected" may be directly connected or indirectly connected through an intermediate, or may be a connection between two elements or an interaction relationship between two elements. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

As shown in fig. 1, the present invention provides a display panel 100, comprising: a substrate 101, a first metal layer 102, a planarization layer 103, a first insulating layer 104, a second insulating layer 105, and a second metal layer 106.

The substrate 101 has a PAD area 1011 and a display area 1012. In this embodiment, the PAD area 1011 is an FPC PAD area, and the PAD area 1011 is a part of a bonding area (as shown in fig. 2).

The material of the substrate 101 includes polyimide, and a barrier layer is generally disposed on the substrate 101.

The first metal layer 102 is disposed on the substrate 101 and corresponds to the PAD area 1011.

The planarization layer 103 is disposed on the substrate 101 and the first metal layer 102, and the planarization layer 103 surrounds the first metal layer 102. Specifically, a portion of the planarization layer 103 is disposed on the first metal layer 102.

The first insulating layer 104 is disposed on the planarization layer 103.

The second insulating layer 105 is provided on the first insulating layer 104.

The second metal layer 106 is disposed on the second insulating layer 105 and the first metal layer 102.

The material of the first insulating layer 104 includes silicon nitride and silicon oxide.

The material of the planarization layer 103 includes photosensitive polyimide (PSPI).

The silicon nitride molecules are arranged regularly, the membranous is compact, the contact area with the PSPI molecules is small, and the adhesion is poor. The silicon oxide film is not dense, certain van der Waals force exists between molecules and PSPI, and the adhesion is better than that of silicon nitride.

Therefore, the adhesion force between the planarization layer 103 and the silicon nitride and the silicon oxide is increased by the present invention.

Referring to fig. 1 and 3, in the display region 1012, the display panel 100 further includes: a driving layer 107, a display layer 108, an encapsulation layer 109, and a plasma layer 110.

The driving layer 107 is disposed on the substrate 101, and the driving layer 107 includes a plurality of thin film transistors. Each thin film transistor comprises devices such as a grid electrode, an active layer, a source drain electrode layer and the like, wherein the source drain electrode layer and the first metal layer 102 are prepared on the same layer.

The display layer 108 is disposed on the driving layer 107. The encapsulation layer 109 is disposed on the display layer 108.

The first insulating layer 104 and the second insulating layer 105 are also disposed on the package layer 109.

The third insulating layer 112 is disposed on the second insulating layer 105.

The plasma layer 110 is disposed on the third insulating layer 112.

In the display region 1012, the third insulating layer 112 includes a first electrode 1051 and a second electrode 1052, and the first electrode 1051 and the second electrode 1052 are insulated from each other.

The first electrode 1051 and the second electrode 1052 are formed in the second metal layer 106. That is, the second metal layer 106 forms the first electrode 1051 and the second electrode 1052 at the position of the display region 1012.

The second insulating layer 105 further includes a third metal layer 111, and the adjacent first electrodes (1051, 1053) are connected by the third metal layer 111. In practice, the third metal layer 111 is formed on the first insulating layer 104, and then the second insulating layer 105 covers the third metal layer 111.

The content specific gravity of the silicon oxide and the silicon nitride is 1: 4-1: 2, the optimal embodiment is 1:3, and the adhesion force of the material is strongest. The silicon oxide comprises SiO 2; the silicon nitride comprises Si3N 4.

The material of the first insulating layer 104 further includes silicon oxynitride. The molecular formula of the silicon oxynitride comprises: SiON3, SiO2N3, or SiO 3N.

The invention provides a display panel 100, silicon oxynitride is added into a first insulating layer 104 of a nonmetal area, and a PAD area 1011 of a substrate 101 is in contact with a planarization layer 103, so that the adhesion force of a nonmetal film layer of an FPC is improved, and the problem that the FPC is easy to peel off after being bound due to poor adhesion of the nonmetal layer lapped by the PAD area 1011 is solved.

The specific preparation process of the PAD area 1011 provided by the invention comprises the following steps.

A first metal layer 102 and a planarization layer 103 are formed on a substrate 101.

The first insulating layer 104 is formed by depositing materials of silicon nitride and silicon oxide.

Forming a second insulating layer 105, depositing a silicon oxide material on the first insulating layer 104 and the third metal layer 111, and performing exposure, etching and removal operations to obtain the second insulating layer 105.

Forming a second metal layer 106, and depositing a metal material, and performing exposure, etching, and removing operations to obtain the second metal layer 106.

The present invention has been described in detail, and the principle and the implementation of the present invention are explained by applying specific examples, and the description of the above examples is only used to help understanding the technical scheme and the core idea of the present invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims

1. A display panel, comprising:

a substrate having a PAD region and a display region;

in the PAD area, the substrate is provided with:

the first metal layer is arranged on the substrate;

a planarization layer disposed on the substrate and the first metal layer;

a first insulating layer disposed on the planarization layer;

a second insulating layer disposed on the first insulating layer;

the second metal layer is arranged on the second insulating layer and the first metal layer;

wherein the material of the first insulating layer comprises silicon oxynitride.

2. The display panel of claim 1,

the material of the planarization layer includes a photosensitive polyimide.

3. The display panel of claim 1,

in the display area, the substrate is provided with:

the driving layer is arranged on the substrate and comprises a plurality of thin film transistors;

the display layer is arranged on the driving layer;

the packaging layer is arranged on the display layer;

the first insulating layer and the second insulating layer are also arranged on the packaging layer;

and the third insulating layer is arranged on the second insulating layer.

4. The display panel of claim 3,

in the display region, a first electrode and a second electrode are arranged in the third insulating layer, and the first electrode and the second electrode are insulated from each other.

5. The display panel of claim 4,

the first electrode and the second electrode are formed in the second metal layer.

6. The display panel of claim 4,

the second insulating layer further comprises a third metal layer, and the adjacent first electrodes are connected through the third metal layer.

7. The display panel of claim 1,

the content specific gravity of the silicon oxide and the silicon nitride is 1: 4-1: 2.

8. The display panel according to claim 1, wherein a material of the first insulating layer further comprises silicon nitride and silicon oxide.

9. The display panel of claim 1,

the molecular formula of the silicon oxynitride comprises: SiON₃、SiO₂N₃Or SiO₃N。

10. The display panel of claim 8,

the silicon oxide comprises SiO;

the silicon nitride comprises SiN_x。