CN111766508A - Short-circuit protection testing device - Google Patents
Short-circuit protection testing device Download PDFInfo
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- CN111766508A CN111766508A CN202010714825.5A CN202010714825A CN111766508A CN 111766508 A CN111766508 A CN 111766508A CN 202010714825 A CN202010714825 A CN 202010714825A CN 111766508 A CN111766508 A CN 111766508A
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- 238000012360 testing method Methods 0.000 title claims abstract description 37
- 230000005669 field effect Effects 0.000 claims abstract description 54
- 239000000523 sample Substances 0.000 description 3
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2827—Testing of electronic protection circuits
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
- G01R1/0408—Test fixtures or contact fields; Connectors or connecting adaptors; Test clips; Test sockets
- G01R1/0416—Connectors, terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/20—Modifications of basic electric elements for use in electric measuring instruments; Structural combinations of such elements with such instruments
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
- G01R31/2884—Testing of integrated circuits [IC] using dedicated test connectors, test elements or test circuits on the IC under test
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- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Circuit Arrangement For Electric Light Sources In General (AREA)
Abstract
The invention provides a short-circuit protection testing device, which comprises a backlight chip, a field effect transistor and an electronic load instrument, the backlight chip is provided with a positive electrode input port and at least one LED pin, the S electrode of the field effect tube is connected with the LED pin, the G pole of the field effect tube is connected with a driving power circuit, the electronic load instrument is provided with at least one negative pole port and at least one positive pole port, the D pole of the field effect tube is connected with the negative pole port, the positive pole input port of the backlight chip is connected with the positive pole port, during testing, if the difference value between the voltage of the S pole and the voltage of the G pole is smaller than the on-state voltage of the field effect tube, the field effect tube is in an off-state, thereby disconnecting the electronic load instrument from the backlight chip and preventing the backlight chip from being burnt down due to the direct application of a strong voltage on the electronic load instrument side to the pins of the backlight chip.
Description
Technical Field
The invention relates to the field of chip testing, in particular to a short-circuit protection testing device.
Background
At present, for the short-circuit protection test of a backlight chip, a load instrument is required to be used for forced short circuit, an LED pin of the backlight chip is LED out by welding flying wires, then a single-ended probe is connected to an oscilloscope, the other channel of the oscilloscope is connected with a current probe, and the current value during short-circuit protection is captured; after the load instrument is electrified, a proper current value is pulled, a short circuit is pressed, the mainboard is electrified, and the oscilloscope takes a channel where the current probe is as trigger to capture a waveform.
However, in the actual measurement of the backlight chip, it is found that when the conventional testing method is used to perform the short-circuit protection test, a strong voltage is directly applied to the LED pin of the backlight chip, which may cause the backlight chip to be burned down.
Disclosure of Invention
The invention mainly aims to provide a short-circuit protection testing device, aiming at solving the problem that a strong voltage is directly applied to an LED pin of a backlight chip to cause burning of the backlight chip.
In order to achieve the above object, the present invention provides a short-circuit protection testing apparatus, including:
the backlight module comprises a backlight chip, a light source and a light source, wherein the backlight chip is provided with a positive electrode input port and at least one LED pin;
the S pole of the field effect transistor is connected with the LED pin, and the G pole of the field effect transistor is connected with a driving power supply circuit;
the electronic load instrument is provided with at least one negative electrode port and at least one positive electrode port, the D electrode of the field effect tube is connected with the negative electrode port, and the positive electrode input port of the backlight chip is connected with the positive electrode port;
during testing, the negative electrode port of the electronic load instrument is connected with the positive electrode port so as to increase the voltage of the S pole of the field effect tube, and when the difference between the voltage of the S pole and the voltage of the G pole is smaller than the on-state voltage of the field effect tube, the field effect tube is in an off state.
In an optional embodiment, the driving power circuit includes a power source and a driving resistor, one end of the driving resistor is connected to the G-pole of the fet, and the other end of the driving resistor is connected to the power source.
In an alternative embodiment, the power supply is any one of a 3.3V power supply, a 5V power supply, or a 12V power supply.
In an optional embodiment, after the backlight chip is powered on, the field effect transistor is in a conducting state.
In an alternative embodiment, the electronic load meter is in a constant voltage mode.
In an optional embodiment, the voltage value set by the electronic load meter is smaller than the withstand voltage value of the LED pin.
In an optional embodiment, the electronic load meter is further provided with a first ground port and a second ground port, and the first ground port and the second ground port are connected and then grounded.
In an optional embodiment, the backlight chip has four LED pins, the number of the fets is four, and the electronic load device has four negative ports;
the S pole of each field effect tube is connected with the corresponding LED pin, the D pole of each field effect tube is connected with the corresponding negative pole port, and the G pole of each field effect tube is connected on the driving power supply circuit.
In an optional embodiment, the electronic load meter has a first positive electrode port and a second positive electrode port, and the first positive electrode port is connected to the second positive electrode port and is connected to the positive electrode input port.
In an optional embodiment, the fet is an N-type fet.
The invention provides a short-circuit protection testing device which comprises a backlight chip, a field effect tube and an electronic load instrument, wherein the backlight chip is provided with a positive input port and at least one LED pin, the S pole of the field effect tube is connected with the LED pin, the G pole of the field effect tube is connected with a driving power circuit, the electronic load instrument is provided with at least one negative port and at least one positive port, the D pole of the field effect tube is connected with the negative port, and the positive input port of the backlight chip is connected with the positive port; during testing, the negative electrode port of the electronic load instrument is connected with the positive electrode port so as to enable the voltage of the S pole of the field effect tube to be increased, and when the difference value between the voltage of the S pole and the voltage of the G pole is smaller than the conducting voltage of the field effect tube, the field effect tube is in a turn-off state, so that the connection between the electronic load instrument and the backlight chip is disconnected, and the situation that the backlight chip is burnt due to the fact that the strong voltage on the electronic load instrument side is directly applied to the pin of the backlight chip is prevented.
Drawings
In order to more clearly illustrate the embodiments or exemplary technical solutions of the present invention, the drawings used in the embodiments or exemplary descriptions will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic circuit diagram of a short-circuit protection testing apparatus according to an embodiment of the invention.
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
As shown in fig. 1, the present invention provides a short-circuit protection test device.
In an embodiment, as shown in fig. 1, the short-circuit protection testing apparatus includes a backlight chip 10, a field effect transistor 20, and an electronic load device 30, where the backlight chip 10 has a positive input port (not shown) and at least one LED pin, where the backlight chip 10 in this embodiment has four LED pins, and certainly, in other embodiments, the pins on the backlight chip 10 are not limited.
Further, one of the LED pins is illustrated, that is, the S pole of the fet 20 is connected to the LED pin, the G pole of the fet 20 is connected to the driving power circuit 40, the electronic load device 30 has at least one negative port VLED + and at least one positive port VLED +, the D pole of the fet 20 is connected to the negative port VLED-, and the positive input port of the backlight chip 10 is connected to the positive port VLED +. The D pole of the field effect transistor 20 is an LED _ EN port, and the LED _ EN port is connected to the output end of the driving power supply circuit.
Specifically, after the backlight chip is powered on, the field effect transistor 20 is in a conducting state.
Specifically, when the backlight chip 10 is tested, a short key of the electronic load device 30 is pressed to connect the negative port VLED-of the electronic load device 30 to the positive port VLED +. At this time, the voltage across the electronic load device 30 is directly applied to the D pole of the fet 20, so that the voltage of the D pole of the fet 20 increases, and when the voltage of the D pole of the fet 20 increases, the voltage of the S pole of the fet increases as the voltage of the D pole of the fet 20 increases; when the voltage of the S pole of the fet reaches a certain value, the fet 20 is turned off, that is, when the difference between the voltage of the S pole and the voltage of the G pole is smaller than the on voltage of the fet 20, the fet 20 is in an off state, so that when the electronic load device 30 is short-circuited, the connection between the electronic load device 30 and the backlight chip 10 is disconnected, and a strong voltage on the electronic load device 30 side is prevented from being directly applied to the pin of the backlight chip 10 to burn the backlight chip 10, thereby protecting the backlight chip 10.
For example, in practical application, the electronic load device 30 is replaced by an external display screen, and if the external display screen is abnormally short-circuited, the field-effect tube 20 may be turned off to disconnect the external display screen on the backlight chip 10, so as to prevent the backlight chip from being burnt out and property loss caused by a strong voltage applied to the backlight chip 10 at the moment of short circuit of the display screen.
Optionally, the voltage of the on-state voltage of the field effect transistor 20 ranges from 1V to 2V.
In an embodiment of the present invention, the short-circuit protection testing device includes a backlight chip 10, a field effect transistor 20 and an electronic load device 30, the backlight chip 10 has a positive input port and at least one LED pin, the S-pole of the field effect transistor 20 is connected to the LED pin, the G-pole of the field effect transistor 20 is connected to a driving power circuit 40, the electronic load device 30 has at least one negative port VLED + and at least one positive port VLED +, the D-pole of the field effect transistor 20 is connected to the negative port VLED-, and the positive input port of the backlight chip 10 is connected to the positive port VLED +; during testing, the negative port VLED-of the electronic load device 30 is connected to the positive port VLED +, so as to increase the voltage of the S-pole of the fet 20, and when the difference between the voltage of the S-pole and the voltage of the G-pole is smaller than the on-voltage of the fet 20, the fet 20 is in the off-state, thereby disconnecting the electronic load device 30 from the backlight chip 10, and preventing the strong voltage on the electronic load device 30 side from being directly applied to the pin of the backlight chip 10, which may cause the backlight chip 10 to be burned down.
In an alternative embodiment, the backlight chip 10 has four LED pins, the fets 20 are four (e.g., Q1, Q2, Q3, Q4), and the electronic load device 30 has four negative ports VLED — (e.g., VLED1-, VLED2-, VLED3-, and VLED 4-). The S pole of each fet 20 is connected to the corresponding LED pin, the D pole of each fet is connected to the corresponding negative electrode port VLED-, and the G pole of each fet is commonly connected to the driving power supply circuit.
Further, the driving power circuit 40 is configured to provide a driving voltage for the fet 20. The driving power circuit 40 includes a power source (not shown) and a driving resistor R, one end of the driving resistor R is connected to the G-pole of the fet 20, and the other end of the driving resistor R is connected to the power source.
Alternatively, the power source may be an external power source, such as: the power supply is any one of a 3.3V power supply, a 5V power supply or a 12V power supply, and is respectively used for providing a driving voltage of 3.3V, 5V or 12V for the field effect transistor 20.
In this embodiment, the power supply is a 12V power supply. Of course, in other embodiments, the power source may be other types of power sources, and is not limited herein.
Optionally, the resistance value of the resistor R is 1K, and the current flowing through the resistor R is the same as the current flowing through the field effect transistor 20, that is, the resistor R is used to set the driving current of the field effect transistor 20. In this embodiment, the impedance of the resistor R is much smaller than the impedance of the field-effect transistor 20, that is, the G-voltage of the field-effect transistor 20 is equal to the voltage of the power supply, for example, when the voltage of the power supply is 12V, the G-voltage of the field-effect transistor 20 is also 12V.
Further, taking the G-pole voltage of the fet 20 as 12V as an example, when the backlight chip 10 is tested, the negative port VLED-of the electronic load device 30 is connected to the positive port VLED +, at this time, the voltage across the electronic load device 30 is directly applied to the D-pole of the fet 20, so that the voltage of the D-pole of the fet 20 increases, and when the voltage of the D-pole of the fet 20 increases, the voltage of the S-pole of the fet increases along with the increase of the voltage of the D-pole of the fet 20; when the voltage of the S pole of the fet increases from zero to 11V, the voltage of the S pole of the fet does not increase, and at this time, the fet 20 is turned off, that is, the difference between the voltage of the S pole and the voltage of the G pole is 1V, and the voltage range of the on voltage of the fet 20 is 1V to 2V, that is, the difference between the voltage of the S pole and the voltage of the G pole is smaller than the on voltage of the fet 20, and the fet 20 is turned off, so that the connection between the electronic load device 30 and the backlight chip 10 is broken, and the backlight chip 10 is prevented from being burnt out due to the direct application of a strong voltage on the electronic load device 30 side to the pins of the backlight chip 10. It will be appreciated that after turning off the fet 20, the voltage at the S-pole of the fet decreases from 11V to zero.
Optionally, since the present embodiment tests the LED pins of the backlight chip 10, that is, during the test, the electronic load meter 30 is in a constant voltage mode, and at this time, the electronic load meter 30 is a constant voltage source.
In practical applications, since the LED lamp device is a constant voltage device, i.e. the operation mode of the electronic load meter 30 is set to be a constant voltage mode in this embodiment, so as to simulate the LED lamp device, and provide a constant voltage to the backlight chip 10 during the test.
Optionally, the voltage value set by the electronic load meter 30 is smaller than the withstand voltage value of the LED pin. For example, the voltage value set by the electronic load meter 30 is 79.2V, and the withstand voltage value of the LED pin is 80V, so that the LED pin can be protected from being burnt.
Furthermore, the electronic load device 30 is further provided with a first ground port N1 and a second ground port N2, and the first ground port N1 and the second ground port N2 are connected and then grounded. The electronic load device 30 has a first positive electrode port and a second positive electrode port, and the first positive electrode port is connected to the second positive electrode port and is connected to the positive electrode input port.
Optionally, the fet 20 is an N-type fet.
Optionally, the model of the N-type fet is NCE 0103. Of course, in other embodiments, the N-type fet may also be another fet, and is not limited herein.
It is understood that the backlight chip 10 has other circuits thereon, such as: the overvoltage protection circuit, etc. are not described in detail herein.
Optionally, the model of the backlight chip 10 is MP3398, that is, as shown in fig. 1, only four LED pins (e.g., LED1, LED2, VLED3, LED4 pins) in the backlight chip 10 are shown, and as for the circuits of the other pins of the backlight chip 10, the circuits of the other pins are not improved, that is, the circuits of the other pins are not shown in fig. 1.
Of course, in another embodiment, the technical solution provided by the present invention can also be used for short-circuit protection of backlight chips of other models, such as: the backlight chip is not limited herein, and may be a backlight chip of model OB3365, CRT85 8549L, OZ554LN, or the like.
The number of the LED pins is different corresponding to the backlight chips 10 of different models, and at this time, the corresponding electronic load device 30 may be selected according to the number of the LED pins to perform the short-circuit protection test on the backlight chip, which is not limited herein.
In an embodiment of the present invention, the short-circuit protection testing device includes a backlight chip 10, a field effect transistor 20 and an electronic load device 30, the backlight chip 10 has a positive input port and at least one LED pin, the S-pole of the field effect transistor 20 is connected to the LED pin, the G-pole of the field effect transistor 20 is connected to a driving power circuit 40, the electronic load device 30 has at least one negative port VLED + and at least one positive port VLED +, the D-pole of the field effect transistor 20 is connected to the negative port VLED-, and the positive input port of the backlight chip 10 is connected to the positive port VLED +; during testing, the negative port VLED-of the electronic load device 30 is connected to the positive port VLED +, so as to increase the voltage of the S-pole of the fet 20, and when the difference between the voltage of the S-pole and the voltage of the G-pole is smaller than the on-voltage of the fet 20, the fet 20 is in the off-state, thereby disconnecting the electronic load device 30 from the backlight chip 10, and preventing the strong voltage on the electronic load device 30 side from being directly applied to the pin of the backlight chip 10, which may cause the backlight chip 10 to be burned down.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the specification and the drawings, or any other related technical fields directly or indirectly applied thereto under the conception of the present invention are included in the scope of the present invention.
Claims (10)
1. A short-circuit protection test device, characterized in that the short-circuit protection test device comprises:
the backlight module comprises a backlight chip, a light source and a light source, wherein the backlight chip is provided with a positive electrode input port and at least one LED pin;
the S pole of the field effect transistor is connected with the LED pin, and the G pole of the field effect transistor is connected with a driving power supply circuit;
the electronic load instrument is provided with at least one negative electrode port and at least one positive electrode port, the D electrode of the field effect tube is connected with the negative electrode port, and the positive electrode input port of the backlight chip is connected with the positive electrode port;
during testing, the negative electrode port of the electronic load instrument is connected with the positive electrode port so as to increase the voltage of the S pole of the field effect tube, and when the difference between the voltage of the S pole and the voltage of the G pole is smaller than the on-state voltage of the field effect tube, the field effect tube is in an off state.
2. The short-circuit protection testing device as claimed in claim 1, wherein the driving power circuit comprises a power source and a driving resistor, one end of the driving resistor is connected to the G pole of the FET, and the other end of the driving resistor is connected to the power source.
3. The short-circuit protection test device of claim 2, wherein the power supply is any one of a 3.3V power supply, a 5V power supply, or a 12V power supply.
4. The short-circuit protection testing device of claim 1, wherein the field effect transistor is in a conducting state after the backlight chip is powered on.
5. The short-circuit protection test device of claim 1, wherein the electronic load meter is in a constant voltage mode.
6. The short-circuit protection testing device of claim 5, wherein the voltage value set by the electronic load meter is smaller than the withstand voltage value of the LED pin.
7. The short-circuit protection testing device of claim 6, wherein the electronic load meter is further provided with a first ground port and a second ground port, and the first ground port and the second ground port are connected and then grounded.
8. The short-circuit protection testing device of claim 1, wherein the backlight chip has four LED pins thereon, the fets are four in number, and the electronic load meter has four negative terminals thereon;
the S pole of each field effect tube is connected with the corresponding LED pin, the D pole of each field effect tube is connected with the corresponding negative pole port, and the G pole of each field effect tube is connected on the driving power supply circuit.
9. The short-circuit protection testing device as claimed in claim 8, wherein the electronic load meter has a first positive port and a second positive port, and the first positive port is connected to the second positive port and to the positive input port.
10. The short-circuit protection testing device of any one of claims 1 to 9, wherein the field effect transistor is an N-type field effect transistor.
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| CN202010714825.5A CN111766508A (en) | 2020-07-21 | 2020-07-21 | Short-circuit protection testing device |
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| CN202010714825.5A CN111766508A (en) | 2020-07-21 | 2020-07-21 | Short-circuit protection testing device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116298766A (en) * | 2023-05-16 | 2023-06-23 | 成都思科瑞微电子股份有限公司 | Test method of insulated gate field effect transistor |
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| 欧少敏等: "基于STM32F103的直流电子负载的设计", 《大众科技》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116298766A (en) * | 2023-05-16 | 2023-06-23 | 成都思科瑞微电子股份有限公司 | Test method of insulated gate field effect transistor |
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Address after: 518000 501-2, building a, wisdom Plaza, 4068 Qiaoxiang Road, Gaofa community, Shahe street, Nanshan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen baoxinchuang Technology Co.,Ltd. Address before: 518000 floor 6, workshop 7, Tongfu industrial city, No. 351, tangxing Road, Tanglang community, Taoyuan Street, Nanshan District, Shenzhen City, Guangdong Province Applicant before: Shenzhen Baolong Daxin Technology Co.,Ltd. |
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Application publication date: 20201013 |